CN101928947A - Cleaning reagent and manufacturing process of aluminum pad - Google Patents
Cleaning reagent and manufacturing process of aluminum pad Download PDFInfo
- Publication number
- CN101928947A CN101928947A CN 200910054020 CN200910054020A CN101928947A CN 101928947 A CN101928947 A CN 101928947A CN 200910054020 CN200910054020 CN 200910054020 CN 200910054020 A CN200910054020 A CN 200910054020A CN 101928947 A CN101928947 A CN 101928947A
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- material layer
- aluminum pad
- insulation material
- layer
- volume percent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/038—Post-treatment of the bonding area
- H01L2224/0381—Cleaning, e.g. oxide removal step, desmearing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention provides a manufacturing process of an aluminum pad, which comprises the steps of providing a semiconductor substrate, wherein a metal interconnection line is arranged on the active surface of the semiconductor substrate; sequentially forming an etch stop layer and a first insulating material layer on the semiconductor substrate; etching the first insulating material layer and the etch stop layer, and forming an opening in the position which corresponds to the metal interconnection line; forming a metal aluminum layer in the opening and on the first insulating material layer; removing the metal aluminum layer on the first insulating material layer, and forming the aluminum pad which is electrically connected with the metal interconnection line; forming a second insulating material layer on the first insulting material layer; and cleaning the aluminum pad, wherein cleaning liquid for cleaning the aluminum pad contains 3-10% of H2SO4, 5-20% of H2O2 and the balance of H2O according to the volume percent. The method can prevent the corrosion of the aluminum pad after cleaning.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to the manufacture craft of a kind of cleaning reagent and aluminum pad.
Background technology
Along with the characteristic dimension of semiconducter device is further dwindled, the RC of interconnection line postpones to become the principal contradiction that influences circuit speed gradually, for improving this point, begins to adopt the processing method of being made metal interconnected line structure by metallic copper.Compare with traditional aluminium technology, the advantage of process for copper is that its resistivity is lower, and electroconductibility is better, by its connecting lead wire of making can keep on an equal basis in addition more do forr a short time under the situation of strong current supporting capacity, more intensive.In addition, it also has bigger advantage than aluminium technology at aspects such as electromigration, RC delay, reliability and life-spans.And for coupled pad structure (pad), compare with the multiple layer metal interconnecting construction because of it and to have relatively large size, under the situation of taking into account device performance and cost of manufacture, be still usually and utilize traditional aluminium technology to make formation.
With reference to the accompanying drawings shown in 1, cross section structure synoptic diagram for the semiconducter device that forms pad, as shown in Figure 1, be formed with in the semiconducter substrate 100 semiconducter device with and interconnection line, 110 is metal interconnecting wires in the accompanying drawing, it for example is metallic copper, metal interconnecting wires 110 is realized with being electrically connected by aluminum pad 120 of outside line, described aluminum pad 120 is positioned on the described metal interconnecting wires, on the semiconducter substrate between pad 120 and the pad 120, be provided with etching barrier layer 130 and be positioned at first insulation material layer 140 and second insulation material layer 150 that is used for electrical isolation on the etching barrier layer 130.The technology that forms described aluminum pad is generally: semiconducter substrate 100 is provided, has metal interconnecting wires 110 on the active surface of described semiconducter substrate 100; On described semiconducter substrate, form the etching barrier layer 130 and first insulation material layer 140 successively; Described first insulation material layer 140 of etching and etching barrier layer 130 form opening in the position corresponding with metal interconnecting wires; Form the metal aluminium lamination in described opening and on first insulation material layer 140; Remove the metal aluminium lamination on first insulation material layer, form the aluminum pad 120 that is electrically connected with metal interconnecting wires; Subsequently, on described first insulation material layer and aluminum pad 120, form second insulation material layer 150, and on described second insulation layer 150, spray photoresist material, and by exposure, developing process is removed the photoresist material that is positioned on the aluminium welding pad, only keep second insulation layer that is positioned on first insulation layer, at last, adopt cineration technics to remove the photoresist material that is positioned on second insulation layer, can produce metal-containing polymer at the aluminium welding pad and second surface of insulating layer in the cineration technics, therefore, need clean, the clean-out system that described cleaning adopted contains H usually
2SO
4, H
2O, HF adopts described cleaning reagent, after having cleaned aluminum pad, the corrosion of aluminum pad can take place usually, can cause the aluminum pad lead-in wire to lose efficacy.
Summary of the invention
The problem that the present invention solves provides a kind of manufacture craft of aluminum pad, avoids aluminum pad to corrode after cleaning.
The present invention also provides a kind of cleaning reagent, is used for clean metal aluminium, can avoid metallic aluminium to corrode.
The invention provides a kind of manufacture craft of aluminum pad, comprising:
Semiconducter substrate is provided, has metal interconnecting wires on the active surface of described semiconducter substrate;
On described semiconducter substrate, form the etching barrier layer and first insulation material layer successively;
Described first insulation material layer of etching and etching barrier layer form opening in the position corresponding with metal interconnecting wires;
Form the metal aluminium lamination in described opening and on first insulation material layer;
Remove the metal aluminium lamination on first insulation material layer, form the aluminum pad that is electrically connected with metal interconnecting wires;
On described first insulation material layer, form second insulation material layer;
Clean described aluminum pad, the scavenging solution that cleans described aluminum pad contains H
2SO
4, H
2O, H
2O
2, H wherein
2SO
4Volume percent content be 3～10%, H
2O
2Volume percent content be 5～20%, all the other are H
2O.
Optionally, first insulation material layer is the composite bed that silicon oxide layer and silicon oxynitride layer are combined to form.
Optionally, second insulation material layer is the composite bed that silicon oxide layer and silicon nitride layer are combined to form.
The present invention also provides a kind of cleaning reagent, is used for clean metal aluminium, comprising: H
2SO
4, H
2O, H
2O
2, H wherein
2SO
4Volume percent content be 3～10%, H
2O
2Volume percent content be 5～20%, all the other are H
2O.
Owing to adopted technique scheme, compared with prior art, the present invention has the following advantages:
A kind of new cleaning reagent is provided, is used for clean metal aluminium, especially the aluminum pad in the semiconductor fabrication process can avoid aluminum pad to corrode after cleaning.
The present invention also provides a kind of manufacture craft of aluminum pad, adopts to contain H
2SO
4, H
2O, H
2O
2Cleaning reagent, after cleaning aluminum pad, corrosion phenomenon can not take place in aluminum pad.
Description of drawings
Fig. 1 is the cross section structure synoptic diagram of the semiconducter device of formation aluminum pad;
Fig. 2 is the process flow sheet of the manufacture craft of the embodiment of the invention 2 aluminum pads;
Fig. 3 to Fig. 6 is the cross section structure synoptic diagram of each step of manufacture craft of the embodiment of the invention 2 aluminum pads.
Embodiment
Below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
Embodiment 1
As stated in the Background Art, adopt existing processes to make in the technology of aluminum pad, clean after the described aluminum pad, the corrosion of aluminum pad can take place, the present inventor finds when research metallic aluminium pad generation corrosive phenomenon, and the corrosion of metallic aluminium pad all occurs on the crystal boundary between the metallic aluminium atom, further studies show that, corrosion on this crystal boundary that occurs between the metallic aluminium atom is that generation corrosive chemical reaction is owing to exist the F ion to cause in the metallic aluminium pad:
And the F ion is one of main component in the existing cleaning reagent, therefore, in order to address this problem, the present inventor provides a kind of new cleaning reagent, is used for clean metal aluminium, is specially adapted to the clean metal aluminum pad, not only can remove oxide compound residual on the metallic aluminium, organic substance residues etc. can also be avoided between the crystal boundary of metallic aluminium introducing and cause metallic aluminium corrosive ion, for example F ion.
Present embodiment provides a kind of cleaning reagent, is used for clean metal aluminium, comprising: H
2SO
4, H
2O, H
2O
2, H wherein
2SO
4Volume percent content be 3～10%, H
2O
2Volume percent content be 5～20%, all the other are H
2O.If be volume percent content, H
2SO
4Concentration range be 85～98%, commonly used is that volume percent content is 98% the vitriol oil.
In an embodiment of present embodiment, H in the described cleaning reagent
2SO
4Concentration be 98%, its volume percent content is 5%, H
2The volume percent content of O is 83.3%, H
2O
2Volume percent content be 11.7%.Adopt after the described cleaning reagent clean metal aluminum pad, find on the metallic aluminium pad corrosion phenomenon not to take place.
In another embodiment of present embodiment, H in the described cleaning reagent
2SO
4Concentration be 98%, its volume percent content is 7%, H
2The volume percent content of O is 80%, H
2O
2Volume percent content be 13%.Adopt after the described cleaning reagent clean metal aluminium, find on the metallic aluminium pad corrosion phenomenon not to take place.
In another embodiment of present embodiment, H in the described cleaning reagent
2SO
4Concentration be 98%, its volume percent content is 3%, H
2The volume percent content of O is 80%, H
2O
2Volume percent content be 17%.Adopt after the described cleaning reagent clean metal aluminium, find on the metallic aluminium pad corrosion phenomenon not to take place.
Embodiment 2
Present embodiment provides a kind of manufacture craft of aluminum pad, shown in 3, comprising with reference to the accompanying drawings: step S100, semiconducter substrate is provided, and the active surface of described semiconducter substrate has metal interconnecting wires; Step S110 forms the etching barrier layer and first insulation material layer successively on described semiconducter substrate; Step S120, described first insulation material layer of etching and etching barrier layer form opening in the position corresponding with metal interconnecting wires; Step S130 forms the metal aluminium lamination in described opening and on first insulation material layer; Step S140 removes the metal aluminium lamination on first insulation material layer, forms the aluminum pad that is electrically connected with metal interconnecting wires; Step S150 forms second insulation material layer on described first insulation material layer; Step S160 cleans described aluminum pad, and the scavenging solution that cleans described aluminum pad contains H
2SO
4, H
2O, H
2O
2, H wherein
2SO
4Volume percent content be 3～10%, H
2O
2Volume percent content be 5～20%, all the other are H
2O.Optionally, H
2SO
4Concentration be 85～98% (volume percent contents).
With reference to the accompanying drawings shown in 3, be formed with in the described semiconducter substrate 300 semiconducter device with and interconnection line, simple for accompanying drawing, omit semiconducter device and most interconnection line in the accompanying drawing, only express on the active surface that is positioned at semiconducter substrate, be used for the layer of metal interconnection line (top metal) 310 with external circuit interconnection, the material of described metal interconnecting wires for example is a metallic copper.
With reference to the accompanying drawings shown in 3, on described semiconducter substrate, form etching barrier layer 320 and first insulation material layer, first insulation material layer 330 successively, the material of described etching barrier layer 320 is silicon nitride etc. for example, form for example chemical Vapor deposition process of technology, the material of described first insulation material layer 330 is silicon nitride for example, silicon oxynitride, silicon oxide etc., form for example chemical Vapor deposition process of technology, optionally, described first insulation material layer 330 can also be the composite bed that silicon oxide-silicon oxy-nitride material is formed, and for example, first insulation material layer is that one deck silicon oxide layer and one deck silicon oxynitride layer of same thickness formed; Subsequently, carry out step S120, described first insulation material layer 330 of etching and etching barrier layer 320, to semiconducter substrate, form opening in the position corresponding with metal interconnecting wires 310, the cross-sectional width of described opening is more than or equal to the cross-sectional width of metal interconnecting wires 310, and exposes described metal interconnecting wires 310 fully, and the technology of described first insulation material layer 330 of etching etching and etching barrier layer 320 can be the common process of prior art.
Shown in 4, carrying out step S130 with reference to the accompanying drawings, is chemical Vapor deposition process, for example plasma reinforced chemical vapour deposition in the described technology that forms the described metal aluminium lamination 340 of metal aluminium lamination 340 formation in described opening and on first insulation material layer 330.Before the described metal aluminium lamination 340 of deposition, also can be on described semiconducter substrate deposition skim TaN or Ta layer earlier, be used to prevent the atomic diffusion between metal aluminium lamination and the interconnecting metal layer.
Shown in 5, carry out step S140 with reference to the accompanying drawings, remove the metal aluminium lamination 340 on first insulation material layer 330, form the aluminum pad 340a that is electrically connected with metal interconnecting wires; Its concrete operating procedure is for example: form photoresist layer on described metal aluminium lamination 340, and by exposure, the method of developing is removed the photoresist layer that is positioned on first insulation material layer, be mask with described photoresist layer afterwards, wet etching metal aluminium lamination 340, the metal aluminium lamination that will be positioned on first insulation material layer 330 is removed, formation is positioned at the aluminum pad 340a that is electrically connected with metal interconnecting wires 320 on the described metal interconnecting wires, afterwards, adopt cineration technics to remove again and be positioned at upward residual photoresist layer of described aluminum pad 340a.The technology of etching metal aluminium lamination adopts dry etching usually, and the etching gas that is adopted includes CFx.
Afterwards, with reference to the accompanying drawings shown in 6, performing step S150,330 form second insulation material layer 350 on described first insulation material layer, concrete operations technology is for example: deposition second insulation material layer 350 on described first insulation material layer 330 and aluminum pad 340a, spin coating photoresist layer on described second insulation material layer 350 afterwards, and by exposure, the technology of developing is removed the photoresist material that is positioned on the aluminum pad 340a, with described photoresist material is mask, described second insulation material layer of etching can be removed second insulation material layer that is positioned on the aluminum pad 340a, is implemented in 330 formation, second insulation material layer 350 on first insulation material layer.
The material of described second insulation material layer 350 is silicon nitride for example, silicon oxynitride, silicon oxide etc., form for example chemical Vapor deposition process of technology, optionally, described second insulation material layer 350 can also be the composite bed that silicon oxide-silicon nitride material is formed, and for example, second insulation material layer is that the silicon oxide layer and the silicon nitride layer of same thickness formed.
At last, adopt cineration technics to remove the photoresist material that is positioned on second insulation material layer 350, after the cineration technics, can produce organic substance residues (polymer) on the described metallic aluminium pad 340a and second insulation material layer 350, contain the F ion in the described organic substance residues, the amount of organic substance residues is big more, F ion residues amount is many more, because the F ionic exists, and under the certain humidity condition, will bring out the corrosion of aluminum pad.Therefore, must clean, remove described organic substance residues fully described aluminum pad.
Therefore, performing step S160 adopts and contains H
2SO
4, H
2O, H
2O
2Scavenging solution clean described aluminum pad 340a, wherein H
2SO
4Volume percent content be 3～10%, H
2O
2Volume percent content be 5～20%, all the other are H
2O.Optionally, H
2SO
4Concentration range be 85～98% (concentration of volume percent).Described scavenging solution not only can be removed the organic substance residues on the aluminum pad fully, and, can in cleaning process, on aluminum pad, not introduce new F ion, therefore, after the cleaning, can avoid the corrosion of aluminum pad fully.
In an embodiment, for example: H in the described cleaning reagent
2SO
4Concentration be 98%, its volume percent content is 5%, H
2The volume percent content of O is 83.3%, H
2O
2Volume percent content be 11.7%.Adopt after the described cleaning reagent clean metal aluminum pad, find on the metallic aluminium pad corrosion phenomenon not to take place.
In another embodiment of present embodiment, H in the described cleaning reagent
2SO
4Concentration be 98%, its volume percent content is 7%, H
2The volume percent content of O is 80%, H
2O
2Volume percent content be 13%.Adopt after the described cleaning reagent clean metal aluminum pad, find on the metallic aluminium pad corrosion phenomenon not to take place.
In another embodiment of present embodiment, H in the described cleaning reagent
2SO
4Concentration be 98%, its volume percent content is 3%, H
2The volume percent content of O is 80%, H
2O
2Volume percent content be 17%.Adopt after the described cleaning reagent clean metal aluminum pad, find on the metallic aluminium pad corrosion phenomenon not to take place.
In the present embodiment, the time of cleaning is 10～180s.
In the present embodiment, employed H
2SO
4, H
2O, H
2O
2Concentration of volume percent and scavenging period and aluminum pad on the kind and the quantity of remaining impurities relevant, for example: in that to adopt cineration technics to remove time of ashing in the technology of the photoresist material on second insulation layer long more or temperature is higher, the H that is adopted
2SO
4Concentration can suitable corresponding reduction, the time of cleaning also can reduce; If form the content of the CFx gas that uses in the technological process of aluminum pad at the etching metal aluminium lamination low more, the etched time is short more, H
2SO
4Ratio and cleaning reagent time of cleaning also can corresponding shortening.
Corrosion phenomenon because last cleaning has been eliminated and caused metallic aluminium pad generation corrosive F ion, therefore, after cleaning, can not take place in the aluminum pad that adopts the described method of present embodiment to make.
Though the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (5)
1. a cleaning reagent is used for clean metal aluminium, it is characterized in that, comprising: H
2SO
4, H
2O, H
2O
2, H wherein
2SO
4Volume percent content be 3～10%, H
2O
2Volume percent content be 5～20%, all the other are H
2O.
2. cleaning reagent according to claim 1 is characterized in that: H
2SO
4, H
2O, H
2O
2Volume percent content be respectively: 7%, 80%, 13%.
3. the manufacture craft of an aluminum pad comprises:
Semiconducter substrate is provided, has metal interconnecting wires on the active surface of described semiconducter substrate;
On described semiconducter substrate, form the etching barrier layer and first insulation material layer successively;
Described first insulation material layer of etching and etching barrier layer form opening in the position corresponding with metal interconnecting wires;
Form the metal aluminium lamination in described opening and on first insulation material layer;
Remove the metal aluminium lamination on first insulation material layer, form the aluminum pad that is electrically connected with metal interconnecting wires;
On described first insulation material layer, form second insulation material layer;
Clean described aluminum pad, the scavenging solution that cleans described aluminum pad contains H
2SO
4, H
2O, H
2O
2, H wherein
2SO
4Volume percent content be 3～10%, H
2O
2Volume percent content be 5～20%, all the other are H
2O.
4. according to the manufacture craft of the described aluminum pad of claim 3, it is characterized in that first insulation material layer is the composite bed that silicon oxide layer and silicon oxynitride layer are combined to form.
5. according to the manufacture craft of the described aluminum pad of claim 3, it is characterized in that second insulation material layer is the composite bed that silicon oxide layer and silicon nitride layer are combined to form.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910054020 CN101928947A (en) | 2009-06-26 | 2009-06-26 | Cleaning reagent and manufacturing process of aluminum pad |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910054020 CN101928947A (en) | 2009-06-26 | 2009-06-26 | Cleaning reagent and manufacturing process of aluminum pad |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101928947A true CN101928947A (en) | 2010-12-29 |
Family
ID=43368364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910054020 Pending CN101928947A (en) | 2009-06-26 | 2009-06-26 | Cleaning reagent and manufacturing process of aluminum pad |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101928947A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900481A (en) * | 2014-03-04 | 2015-09-09 | 中芯国际集成电路制造(上海)有限公司 | Method for cleaning bonding pads |
| CN105087184A (en) * | 2014-05-22 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Cleaning reagent, method for cleaning etching residues in semiconductor device and making method for metal interconnection layer |
| CN105428211A (en) * | 2015-11-10 | 2016-03-23 | 武汉新芯集成电路制造有限公司 | Method for removing pad defect |
| WO2022134651A1 (en) * | 2020-12-23 | 2022-06-30 | 矽磐微电子(重庆)有限公司 | Die and manufacturing method therefor, and chip packaging structure and manufacturing method therefor |
-
2009
- 2009-06-26 CN CN 200910054020 patent/CN101928947A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900481A (en) * | 2014-03-04 | 2015-09-09 | 中芯国际集成电路制造(上海)有限公司 | Method for cleaning bonding pads |
| CN104900481B (en) * | 2014-03-04 | 2018-06-01 | 中芯国际集成电路制造(上海)有限公司 | The method for cleaning pad |
| CN105087184A (en) * | 2014-05-22 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Cleaning reagent, method for cleaning etching residues in semiconductor device and making method for metal interconnection layer |
| CN105428211A (en) * | 2015-11-10 | 2016-03-23 | 武汉新芯集成电路制造有限公司 | Method for removing pad defect |
| WO2022134651A1 (en) * | 2020-12-23 | 2022-06-30 | 矽磐微电子(重庆)有限公司 | Die and manufacturing method therefor, and chip packaging structure and manufacturing method therefor |
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Application publication date: 20101229 |