CN112635295A - Cleaning method of semiconductor - Google Patents
Cleaning method of semiconductor Download PDFInfo
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- CN112635295A CN112635295A CN201910904365.XA CN201910904365A CN112635295A CN 112635295 A CN112635295 A CN 112635295A CN 201910904365 A CN201910904365 A CN 201910904365A CN 112635295 A CN112635295 A CN 112635295A
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- semiconductor
- cleaning
- impurities
- mass concentration
- cleaning method
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a semiconductor cleaning method, which comprises the following steps: (1) soaking the semiconductor in a cleaning agent for 90-120 min at 60-75 ℃; (2) placing the semiconductor in water for ultrasonic cleaning, and drying to obtain the cleaned semiconductor; the cleaning agent comprises sulfuric acid, hydrofluoric acid and water. The acid cleaning agent is used in the cleaning process, so that impurities on the surface of the semiconductor can be effectively removed, and the surface of the semiconductor can be prevented from being damaged.
Description
Technical Field
The invention relates to surface treatment of a semiconductor, in particular to a cleaning method of the semiconductor.
Background
During processing, the surface of the semiconductor tends to be contaminated with various impurities. The formation of impurities easily scratches the surface of the semiconductor, which affects the formation of semiconductor devices and further processing of subsequent processes. In the prior art, the cleaning method for removing silicon wafer impurities cannot effectively clean the impurities at one time.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a semiconductor cleaning method.
In order to achieve the purpose, the invention adopts the technical scheme that: a semiconductor cleaning method comprises the following steps:
(1) soaking the semiconductor in a cleaning agent for 90-120 min at 60-75 ℃;
(2) placing the semiconductor in water for ultrasonic cleaning, and drying to obtain the cleaned semiconductor;
the cleaning agent comprises sulfuric acid, hydrofluoric acid and water.
The acid cleaning agent is used in the cleaning process, so that impurities on the surface of the semiconductor can be effectively removed, and the surface of the semiconductor can be prevented from being damaged.
In a preferred embodiment of the semiconductor cleaning method of the present invention, the cleaning agent has a sulfuric acid mass concentration of 0.5 to 0.8% and a hydrofluoric acid mass concentration of 0.4 to 0.6%. The mixed solution of sulfuric acid and hydrofluoric acid with the concentration is used as a cleaning agent, and the semiconductor is soaked for 90-120 min at the temperature of 60-75 ℃, so that more than 90% of impurities on the surface of the semiconductor can be removed.
In a preferred embodiment of the semiconductor cleaning method according to the present invention, the cleaning agent has a sulfuric acid mass concentration of 0.6% and a hydrofluoric acid mass concentration of 0.5%. Particularly, at the above concentration, the impurity removal rate on the semiconductor surface is the highest.
In a preferred embodiment of the semiconductor cleaning method of the present invention, the frequency of the ultrasonic cleaning is 30 to 50 kHz.
In a preferred embodiment of the semiconductor cleaning method of the present invention, the ultrasonic cleaning is performed for 20 to 40 min.
In a preferred embodiment of the semiconductor cleaning method of the present invention, the water temperature during the ultrasonic cleaning is 40 to 60 ℃.
In a preferred embodiment of the semiconductor cleaning method of the present invention, the drying is performed by blowing air at 45 to 55 ℃.
The invention has the beneficial effects that: the invention provides a semiconductor cleaning method, which uses an acid cleaning agent in the cleaning process, can effectively remove impurities on the surface of a semiconductor, and can avoid damaging the surface of the semiconductor.
Detailed Description
To better illustrate the objects, aspects and advantages of the present invention, the present invention will be further described with reference to specific examples.
Example 1
The semiconductor cleaning method of the embodiment comprises the following steps:
(1) soaking the semiconductor in the cleaning agent at 68 deg.C for 100 min;
(2) placing the semiconductor in deionized water at 50 deg.C, and ultrasonic cleaning at 40kHz for 30 min;
(3) drying with 50 deg.C wind to obtain cleaned semiconductor;
in this embodiment, the cleaning agent is a mixed solution of a sulfuric acid solution and a hydrofluoric acid solution, where the mass concentration of the sulfuric acid solution is 0.6% and the mass concentration of the hydrofluoric acid solution is 0.5%.
The impurities on the surface of the semiconductor cleaned by the semiconductor cleaning method in the embodiment 1 are reduced by more than 95% compared with the impurities before cleaning, and the surface of the semiconductor is hardly damaged.
Example 2
The semiconductor cleaning method of the embodiment comprises the following steps:
(1) soaking the semiconductor in the cleaning agent at 60 deg.C for 120 min;
(2) placing the semiconductor in deionized water at 40 deg.C, and ultrasonic cleaning at 50kHz for 40 min;
(3) drying with 45 deg.C wind to obtain cleaned semiconductor;
in this embodiment, the cleaning agent is a mixed solution of a sulfuric acid solution and a hydrofluoric acid solution, where the mass concentration of the sulfuric acid solution is 0.5% and the mass concentration of the hydrofluoric acid solution is 0.6%.
The impurities on the surface of the semiconductor cleaned by the semiconductor cleaning method in the embodiment 2 are reduced by more than 90% compared with the impurities on the surface of the semiconductor before cleaning, and the surface of the semiconductor is hardly damaged.
Example 3
The semiconductor cleaning method of the embodiment comprises the following steps:
(1) soaking the semiconductor in the cleaning agent for 90min at 75 ℃;
(2) placing the semiconductor in deionized water at 60 deg.C, and performing ultrasonic cleaning at 30kHz for 20 min;
(3) drying with 55 deg.C wind to obtain cleaned semiconductor;
in this embodiment, the cleaning agent is a mixed solution of a sulfuric acid solution and a hydrofluoric acid solution, where the mass concentration of the sulfuric acid solution is 0.8% and the mass concentration of the hydrofluoric acid solution is 0.4%.
The impurities on the surface of the semiconductor cleaned by the semiconductor cleaning method in the embodiment 3 are reduced by more than 90% compared with the impurities on the surface of the semiconductor before cleaning, and the surface of the semiconductor is hardly damaged.
Example 4
The semiconductor cleaning method of the present embodiment is different from that of embodiment 1 only in that the cleaning agent is a mixed solution of a sulfuric acid solution and a hydrofluoric acid solution, wherein the mass concentration of the sulfuric acid solution is 0.5%, and the mass concentration of the hydrofluoric acid solution is 0.6%.
The impurities on the surface of the semiconductor cleaned by the semiconductor cleaning method in the embodiment 4 are reduced by more than 90% compared with the impurities on the surface of the semiconductor before cleaning, and the surface of the semiconductor is hardly damaged.
Example 5
The semiconductor cleaning method of the present embodiment is different from that of embodiment 1 only in that the cleaning agent is a mixed solution of a sulfuric acid solution and a hydrofluoric acid solution, wherein the mass concentration of the sulfuric acid solution is 0.8%, and the mass concentration of the hydrofluoric acid solution is 0.4%.
The impurities on the surface of the semiconductor cleaned by the method for cleaning the semiconductor, which is described in the embodiment 5, are reduced by more than 90% compared with the impurities on the surface of the semiconductor before cleaning, and the surface of the semiconductor is hardly damaged.
Comparative example 1
The semiconductor cleaning method of the comparative example is different from that of example 1 only in that the cleaning agent is a sulfuric acid solution, wherein the mass concentration of the sulfuric acid solution is 1.83%.
The semiconductor surface impurities after cleaning by the semiconductor cleaning method described in the comparative example are reduced by less than 60% compared with the impurities before cleaning.
Comparative example 2
The semiconductor cleaning method of the comparative example is different from that of example 1 only in the cleaning agent, which is a hydrofluoric acid solution in the present example, wherein the mass concentration of the hydrofluoric acid solution is 0.74%.
The semiconductor surface impurities after cleaning by the semiconductor cleaning method described in the comparative example are reduced by less than 50% compared with the impurities before cleaning.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting the protection scope of the present invention, and although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (7)
1. A method for cleaning a semiconductor, comprising the steps of:
(1) soaking the semiconductor in a cleaning agent for 90-120 min at 60-75 ℃;
(2) placing the semiconductor in water for ultrasonic cleaning, and drying to obtain the cleaned semiconductor;
the cleaning agent comprises sulfuric acid, hydrofluoric acid and water.
2. The method for cleaning a semiconductor according to claim 1, wherein a mass concentration of the sulfuric acid in the cleaning agent is 0.5 to 0.8%, and a mass concentration of the hydrofluoric acid is 0.4 to 0.6%.
3. The method for cleaning a semiconductor according to claim 2, wherein a mass concentration of the sulfuric acid in the cleaning agent is 0.6%, and a mass concentration of the hydrofluoric acid is 0.5%.
4. The method for cleaning a semiconductor according to claim 1, wherein the frequency of the ultrasonic cleaning is 30 to 50 kHz.
5. The semiconductor cleaning method according to claim 1, wherein the ultrasonic cleaning is performed for 20 to 40 min.
6. The method for cleaning a semiconductor according to claim 1, wherein a water temperature is 40 to 60 ℃ in the ultrasonic cleaning.
7. The method for cleaning the semiconductor according to claim 1, wherein the drying is performed by blowing air at 45 to 55 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910904365.XA CN112635295A (en) | 2019-09-24 | 2019-09-24 | Cleaning method of semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910904365.XA CN112635295A (en) | 2019-09-24 | 2019-09-24 | Cleaning method of semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112635295A true CN112635295A (en) | 2021-04-09 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910904365.XA Pending CN112635295A (en) | 2019-09-24 | 2019-09-24 | Cleaning method of semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112635295A (en) |
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2019
- 2019-09-24 CN CN201910904365.XA patent/CN112635295A/en active Pending
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