CN101699615A - Method for etching silicon wafer - Google Patents
Method for etching silicon wafer Download PDFInfo
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- CN101699615A CN101699615A CN200910035264A CN200910035264A CN101699615A CN 101699615 A CN101699615 A CN 101699615A CN 200910035264 A CN200910035264 A CN 200910035264A CN 200910035264 A CN200910035264 A CN 200910035264A CN 101699615 A CN101699615 A CN 101699615A
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- silicon wafer
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- silicon chip
- silicon
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Abstract
The invention relates to a method for machining a silicon wafer, in particular to a method for etching a silicon wafer, comprising the steps of: preparing 15-18mol/ml of corrosive liquid ammonium bifluoride water solution; immersing the silicon wafer with the corrosive liquid; etching the silicon wafer for 300-600 seconds; taking off the silicon wafer and sequentially putting into purified water with 70-80 DEG C, 55-65 DEG C and 45-55 DEG C to cleaning for 3-5 minutes at every time; putting the cleaned silicon wafer into sulfuric acid and potassium dichromate solution and boiling; washing with jot water for 2-3 minutes; putting into the purified water and boiling for 2 minutes; immersing the silicon wafer into absolute ethyl alcohol and oscillating with ultrasonic wave for 3-7 minutes; and baking with an oven till to be dried and finished. The method replaces two-step cleaning liquid NH4OH/H2O2/H2O and cleaning liquid HC1/H2O2/H2O with the ammonium bifluoride water solution, adopts the ammonium bifluoride water solution, effectively prevents the surface of the silicon wafer from roughing, and improving the activity of the silicon wafer.
Description
One, technical field:
The present invention relates to the silicon chip processing method, particularly method for etching silicon wafer.
Two, background technology
Since Kern in 1970 and Puotein invention RCA standard cleaning technology, this technology becomes integrated circuit gradually with the main cleaning in the silicon chip manufacture process, and it comprises that two steps cleaned SC21 and (clean NH No. one
4OH/H
2O2/H
2O) and SC22 (No. two cleaning fluid HCl/H
2O
2/ H
2O).In alkaline N H4OH solution, the surface potential of silicon chip surface and particle is all negative, is very beneficial for the removal of particle.But alkaline NH
4OH solution carries out strong anisotropic etch to silicon single crystal, and the silicon chip surface microroughness is increased. and along with gate oxide attenuate constantly, surperficial microroughness can cause oxidated layer thickness inhomogeneous, thereby can influence the integrality of gate oxide.In order to reduce the influence of alkaline cleaning fluid to surperficial microroughness, many researchers adopt and reduce NH in the SC21 cleaning process in recent years
4The method of OH concentration drops to 0105% even lower with concentration by 15%. and the cleaning fluid after the dilution reduces greatly to the corrosion rate on surface, thereby can reduce surface roughening degree NH
4Can reduce the corrosion rate of silicon chip surface when OH concentration drops to very low level, but alkaline solution still carries out anisotropic etch in various degree to the surface, can not avoid the roughening of silicon chip surface fully.
The present invention adopts chemical corrosion to reduce the sheet surface roughness, improves the silicon chip vigor, effectively avoids the silicon chip surface roughening.
Three, summary of the invention:
Technical purpose
The present invention adopts chemical corrosion to reduce the silicon chip surface roughness, improves the silicon chip vigor, effectively avoids the silicon chip surface roughening.
Technical scheme
The present invention has following technical scheme to finish, and it is characterized in that:
A. the preparation of corrosive liquid: ammonium acid fluoride aqueous solution 15-18mol/ml.
B. corrosive liquid submergence silicon chip takes out silicon chip and puts into 70-80 ℃ successively at corrosion of silicon 300-600 second, 55-65 ℃, cleans each 3-5 minute in the 45-55 ℃ of pure water.
C. the silicon slice placed of cleaning is boiled in sulfuric acid and potassium bichromate solution.
D. flow of hot water was washed 2-3 minute.
E. be placed on then and boil 2 minutes in the pure water.
F. silicon chip is immersed in and uses ultrasonic oscillation 3-7 minute in the absolute ethyl alcohol.
G. baking oven baking, until dry, finished product.
As a kind of optimal way, described ammonium acid fluoride aqueous solution optium concentration is 16mol/ml; Described silicon chip is immersed in used ultrasonic oscillation 5 minutes in the absolute ethyl alcohol.For guaranteeing the quality of product, can be by a repeatedly several times to f with technology of the present invention, etch effect like this is better.
Beneficial effect
1. the present invention adopts the ammonium acid fluoride aqueous solution to replace for two steps cleaned NH
4OH/H
2O
2/ H
2O and cleaning fluid HCl/H
2O
2/ H
2O has saved step, has reduced cost simultaneously.
2. the present invention adopts the ammonium acid fluoride aqueous solution, effectively avoids the silicon chip surface roughening, improves the silicon chip vigor.
Four, embodiment
Embodiment 1
A kind of silicon chip etching method is finished by following steps
A. the preparation of corrosive liquid: ammonium acid fluoride aqueous solution 15mol/ml.
B. corrosive liquid submergence silicon chip, corrosion of silicon 600 seconds takes out silicon chip and puts into 70-80 ℃ successively, 55-65 ℃, cleans each 3 minutes in the 45-55 ℃ of pure water.
C. the silicon slice placed of cleaning is boiled in sulfuric acid and potassium bichromate solution.
D. flow of hot water was washed 2-3 minute.
E. be placed on then and boil 2 minutes in the pure water.
F. silicon chip is immersed in and uses ultrasonic oscillation 3 minutes in the absolute ethyl alcohol.
G. baking oven baking, until dry, finished product.
Embodiment 2
A kind of silicon chip etching method is finished by following steps
A. the preparation of corrosive liquid: ammonium acid fluoride aqueous solution 16mol/ml.
B. corrosive liquid submergence silicon chip, corrosion of silicon took out silicon chip in 500 seconds and puts into 70-80 ℃ successively, 55-65 ℃, cleaned each 5 minutes in the 45-55 ℃ of pure water.
C. the silicon slice placed of cleaning is boiled in sulfuric acid and potassium bichromate solution.
D. flow of hot water was washed 2-3 minute.
E. be placed on then and boil 2 minutes in the pure water.
F. silicon chip is immersed in and uses ultrasonic oscillation 5 minutes in the absolute ethyl alcohol.
G. baking oven baking, until dry, finished product.
Embodiment 3
A kind of silicon chip etching method is finished by following steps
A. the preparation of corrosive liquid: ammonium acid fluoride aqueous solution 18mol/ml.
B. corrosive liquid submergence silicon chip, corrosion of silicon 600 seconds takes out silicon chip and puts into 70-80 ℃ successively, 55-65 ℃, cleans each 5 minutes in the 45-55 ℃ of pure water.
C. the silicon slice placed of cleaning is boiled in sulfuric acid and potassium bichromate solution.
D. flow of hot water was washed 2-3 minute.
E. be placed on then and boil 2 minutes in the pure water.
F. silicon chip is immersed in and uses ultrasonic oscillation 5 minutes in the absolute ethyl alcohol.
G. baking oven baking, until dry, finished product.
Claims (3)
1. the method for an etching silicon wafer is characterized in that following steps:
A. the preparation of corrosive liquid: ammonium acid fluoride aqueous solution 15-18mol/ml;
B. corrosive liquid submergence silicon chip takes out silicon chip and puts into 70-80 ℃ successively at corrosion of silicon 300-600 second, 55-65 ℃, cleans each 3-5 minute in the 45-55 ℃ of pure water;
C. the silicon slice placed of cleaning is boiled in sulfuric acid and potassium bichromate solution;
D. flow of hot water was washed 2-3 minute;
E. be placed on then and boil 2 minutes in the pure water;
F. silicon chip is immersed in and uses ultrasonic oscillation 3-7 minute in the absolute ethyl alcohol;
G. baking oven baking, until dry, finished product.
2. the method for etching silicon wafer according to claim 1 is characterized in that: described ammonium acid fluoride aqueous solution 16mol/ml.
3. the method for etching silicon wafer according to claim 1: it is characterized in that: described silicon chip is immersed in the absolute ethyl alcohol with ultrasonic oscillation 5 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910035264A CN101699615A (en) | 2009-09-23 | 2009-09-23 | Method for etching silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910035264A CN101699615A (en) | 2009-09-23 | 2009-09-23 | Method for etching silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101699615A true CN101699615A (en) | 2010-04-28 |
Family
ID=42148072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910035264A Pending CN101699615A (en) | 2009-09-23 | 2009-09-23 | Method for etching silicon wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101699615A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103192313A (en) * | 2013-04-18 | 2013-07-10 | 铜陵市嘉音电子科技有限公司 | Small-size kink mode tuning fork chip polishing method |
| CN104821349A (en) * | 2015-03-31 | 2015-08-05 | 山西南烨立碁光电有限公司 | Four-element LED chip wet etching method |
| CN105070750A (en) * | 2015-06-30 | 2015-11-18 | 南通康比电子有限公司 | Diode corrosion cleaning technology |
-
2009
- 2009-09-23 CN CN200910035264A patent/CN101699615A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103192313A (en) * | 2013-04-18 | 2013-07-10 | 铜陵市嘉音电子科技有限公司 | Small-size kink mode tuning fork chip polishing method |
| CN103192313B (en) * | 2013-04-18 | 2015-05-20 | 铜陵市嘉音电子科技有限公司 | Small-size kink mode tuning fork chip polishing method |
| CN104821349A (en) * | 2015-03-31 | 2015-08-05 | 山西南烨立碁光电有限公司 | Four-element LED chip wet etching method |
| CN105070750A (en) * | 2015-06-30 | 2015-11-18 | 南通康比电子有限公司 | Diode corrosion cleaning technology |
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Open date: 20100428 |