CN105070750A - Diode corrosion cleaning technology - Google Patents
Diode corrosion cleaning technology Download PDFInfo
- Publication number
- CN105070750A CN105070750A CN201510384665.1A CN201510384665A CN105070750A CN 105070750 A CN105070750 A CN 105070750A CN 201510384665 A CN201510384665 A CN 201510384665A CN 105070750 A CN105070750 A CN 105070750A
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- Prior art keywords
- passivation
- cleaning
- concentration
- corrosion
- diode
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- 238000004140 cleaning Methods 0.000 title claims abstract description 45
- 230000007797 corrosion Effects 0.000 title claims abstract description 26
- 238000005260 corrosion Methods 0.000 title claims abstract description 26
- 238000005516 engineering process Methods 0.000 title claims abstract description 17
- 238000002161 passivation Methods 0.000 claims abstract description 61
- 239000012535 impurity Substances 0.000 claims abstract description 30
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 9
- 239000002245 particle Substances 0.000 claims abstract description 9
- 238000006243 chemical reaction Methods 0.000 claims abstract description 7
- 239000000126 substance Substances 0.000 claims abstract description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 20
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 10
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 10
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 10
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 10
- 239000012530 fluid Substances 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 10
- 229910017604 nitric acid Inorganic materials 0.000 claims description 10
- 235000011007 phosphoric acid Nutrition 0.000 claims description 10
- 239000002994 raw material Substances 0.000 claims description 10
- 235000011149 sulphuric acid Nutrition 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 238000007654 immersion Methods 0.000 claims description 8
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 239000000356 contaminant Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 230000002000 scavenging effect Effects 0.000 claims description 5
- 239000012498 ultrapure water Substances 0.000 claims description 5
- 238000004090 dissolution Methods 0.000 claims description 4
- 238000002791 soaking Methods 0.000 claims description 4
- 238000011109 contamination Methods 0.000 abstract 3
- 238000011010 flushing procedure Methods 0.000 abstract 2
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention relates to a diode corrosion cleaning technology, and the cleaning technology sequentially comprises the steps: corrosion, passivation, passivation impurity cleaning, hot-water flushing and immersing, and ultrasonic cleaning, wherein the passivation is a step of removing a damaged layer, caused by cutting, of a side surface of a chip in a mode of chemical corrosion, and is the passivation of the side surface of the chip in a mode of chemical corrosion, thereby enabling the side surface of the chip to form a passivation protection layer. The passivation impurity cleaning is a step of removing organic impurities, metal ions and particle contamination in a mode of chemical reaction. The technology is advantageous in adding the technology of hot-water flushing and immersing before the technology of ultrasonic cleaning, thereby enabling the organic impurities, metal ions and particle contamination, which are attached to the passivation surface of the chip, to be dissolved at a high speed because of heat, improving the subsequent ultrasonic cleaning effect, reducing current leakage, caused by the surface contamination of the chip, of a product, and improving the yield and reliability of products.
Description
Technical field
The present invention relates to a kind of OPENJUCTION diode etching-cleaning machine, particularly a kind of diode etching-cleaning machine that effectively can reduce OPENJUCTION diode reverse leakage current and promote IPENJUCTION diode product reliability.
Background technology
Tradition OPENJUCTION diode etching-cleaning machine technological process: corrosion station; Passivation station; Passivated surface impurity washing station; Ultrasonic cleaning station.This technique has the following disadvantages: resource is as large in pure water consumption, product reverse leakage current value is high, poor stability,
Technique management and control narrow range, requires high to employee skill and accountability, easily produces fluctuation, and the product leakage current that chip surface stains and causes, and the yield of product and reliability reduce.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of diode etching-cleaning machine that effectively can reduce diode reverse leakage current and promote diode product reliability.
For solving the problems of the technologies described above, the present invention is a kind of diode corrosion cleaning, its innovative point is: corrosion cleaning is followed successively by burn into passivation, the cleaning of passivation impurity, hot water injection's immersion and ultrasonic cleaning, wherein corrode the damage layer produced because of cutting for being removed chip sides by chemical corrosion mode, passivation is by chemical reaction mode passivation chip sides, chip sides is made to form passivation protection layer, the cleaning of passivated surface impurity is for remove organic impurities by chemical reaction mode, metal ion, particle contaminant; Hot water bath soaking technology makes to be adsorbed on the organic impurities on chip passivation layer surface, metal ion and particle contaminant material because of heat factor accelerate dissolution, and ultrasonic cleaning station, for utilizing supersonic cavity principle, carries out secondary cleaning to passivated surface impurity.Concrete steps are as follows:
The first step, corrosion: choose the mixed liquor of following material as corrosive liquid, concrete HNO3:HF:CH3COOH:H2SO4=9:9:12:4, is then 25 DEG C ± 5 DEG C in temperature and corrodes immersion once;
Second step, passivation: during passivation, passivation technology raw materials and proportioning are:
H3PO4:H2O2:H2O=1:1:3, then in temperature 65 DEG C ± 10 DEG C passivation once;
3rd step, passivation impurity cleans: cleaning fluid is NH4OH:H2O2:H2O=1:1:5, is 25 DEG C ± 3 DEG C cleans once in temperature;
4th step, hot water injection soaks: be 55-70 DEG C in temperature, rinses and soaks 30S;
5th step, ultrasonic cleaning: at normal temperatures, by following standard cleaning once: high purity water flow is 3 tons/hour, supersonic frequency controls at 50-150 hertz; Scavenging period is 240-600 second.
Further, in described corrosive liquid, the concentration of HNO3 is the concentration of 68.5% ± 2%:HF is that the concentration of 49% ± 0.5%:CH3COOH is for being more than or equal to 99.5%; The concentration of H2SO4 is 97% ± 1%.
Further, in described passivation raw material, the concentration that the concentration of H3PO4 is more than or equal to 85%, H2O2 is more than or equal to 35%.
Further, in described cleaning fluid, the concentration of the concentration 17% ± 1%:H2O2 of NH4OH is more than or equal to 35%.
The invention has the advantages that: before ultrasonic cleaning operation, add hot water bath soaking technology, make to be adsorbed on the organic impurities on chip passivation layer surface, metal ion and particle contaminant material because of heat factor accelerate dissolution, promote subsequent ultrasonic cleaning performance, thus reduce the product leakage current caused because chip surface stains, the yield of improving product and reliability.
Embodiment
The invention discloses a kind of diode corrosion cleaning, cleaning is followed successively by burn into passivation, the cleaning of passivation impurity, hot water injection's immersion and ultrasonic cleaning, wherein corrode the damage layer produced because of cutting for being removed chip sides by chemical corrosion mode, passivation is by chemical reaction mode passivation chip sides, chip sides is made to form passivation protection layer, passivated surface impurity cleans as to remove organic impurities by chemical reaction mode, metal ion, particle contaminant; Hot water bath soaking technology makes to be adsorbed on the organic impurities on chip passivation layer surface, metal ion and particle contaminant material because of heat factor accelerate dissolution, and ultrasonic cleaning station, for utilizing supersonic cavity principle, carries out secondary cleaning to passivated surface impurity.
Be described below in conjunction with specific embodiment:
embodiment one
A kind of diode corrosion cleaning, method step is specific as follows:
The first step, corrosion: choose the mixed liquor of following material as corrosive liquid, concrete HNO3:HF:CH3COOH:H2SO4=9:9:12:4, is then 24.5 DEG C in temperature and corrodes immersion once;
Second step, passivation: during passivation, passivation technology raw materials and proportioning are:
H3PO4:H2O2:H2O=1:1:3, then in temperature 55 DEG C of passivation once;
3rd step, passivation impurity cleans: cleaning fluid is NH4OH:H2O2:H2O=1:1:5, is 22 DEG C cleans once in temperature;
4th step, hot water injection soaks: temperature 55 DEG C, rinses and soaks 30S;
5th step, ultrasonic cleaning: at normal temperatures, by following standard cleaning once: high purity water flow is 3 tons/hour, supersonic frequency controls at 50 hertz; Scavenging period is 240 seconds.
Wherein the concentration of corrosive liquid HNO3 is the concentration of 68.5% ± 2%:HF is that the concentration of 49% ± 0.5%:CH3COOH is for being more than or equal to 99.5%; The concentration of H2SO4 is 97% ± 1%; The concentration that in described second step passivation raw material, the concentration of H3PO4 is more than or equal to 85%, H2O2 is more than or equal to 35%; In described 3rd step passivation impurity cleaning fluid, the concentration of the concentration 17% ± 1%, H2O2 of NH4OH is more than or equal to 35%.
embodiment two
A kind of diode corrosion cleaning, method concrete steps are as follows:
The first step, corrosion: choose the mixed liquor of following material as corrosive liquid, concrete HNO3:HF:CH3COOH:H2SO4=9:9:12:4, is then 25 DEG C in temperature and corrodes immersion once;
Second step, passivation: during passivation, passivation technology raw materials and proportioning are:
H3PO4:H2O2:H2O=1:1:3, then in temperature 65 DEG C of passivation once;
3rd step, passivation impurity cleans: cleaning fluid is NH4OH:H2O2:H2O=1:1:5, is 25 DEG C cleans once in temperature;
4th step, hot water injection soaks: be 65 DEG C in temperature, rinses and soaks 30S;
5th step, ultrasonic cleaning: at normal temperatures, by following standard cleaning once: high purity water flow is 3 tons/hour, supersonic frequency controls at 100 hertz; Scavenging period is 420 seconds.
Wherein the concentration of corrosive liquid HNO3 is the concentration of 68.5% ± 2%:HF is that the concentration of 49% ± 0.5%:CH3COOH is for being more than or equal to 99.5%; The concentration of H2SO4 is 97% ± 1%; The concentration that in described second step passivation raw material, the concentration of H3PO4 is more than or equal to 85%, H2O2 is more than or equal to 35%; In described 3rd step passivation impurity cleaning fluid, the concentration of the concentration 17% ± 1%, H2O2 of NH4OH is more than or equal to 35%.
embodiment three
A kind of diode corrosion cleaning, method step is: the first step, corrosion: choose the mixed liquor of following material as corrosive liquid, concrete HNO3:HF:CH3COOH:H2SO4=9:9:12:4, is then 30 DEG C in temperature and corrodes immersion once;
Second step, passivation: during passivation, passivation technology raw materials and proportioning are:
H3PO4:H2O2:H2O=1:1:3, then in temperature 75 DEG C of passivation once;
3rd step, passivation impurity cleans: cleaning fluid is NH4OH:H2O2:H2O=1:1:5, is 28 DEG C cleans once in temperature;
4th step, hot water injection soaks: be 70 DEG C in temperature, rinses and soaks 30S;
5th step, ultrasonic cleaning: at normal temperatures, by following standard cleaning once: high purity water flow is 3 tons/hour, supersonic frequency controls at 150 hertz; Scavenging period is 600 seconds.
Wherein the concentration of corrosive liquid HNO3 is the concentration of 68.5% ± 2%:HF is that the concentration of 49% ± 0.5%:CH3COOH is for being more than or equal to 99.5%; The concentration of H2SO4 is 97% ± 1%; The concentration that in described second step passivation raw material, the concentration of H3PO4 is more than or equal to 85%, H2O2 is more than or equal to 35%; In described 3rd step passivation impurity cleaning fluid, the concentration of the concentration 17% ± 1%, H2O2 of NH4OH is more than or equal to 35%.
Claims (5)
1. a diode corrosion cleaning, it is characterized in that: described cleaning is followed successively by burn into passivation, the cleaning of passivation impurity, hot water injection's immersion and ultrasonic cleaning, wherein corrode the damage layer produced because of cutting for being removed chip sides by chemical corrosion mode, passivation is by chemical reaction mode passivation chip sides, chip sides is made to form passivation protection layer, passivated surface impurity cleans as to remove organic impurities by chemical reaction mode, metal ion, particle contaminant; Hot water bath soaking technology makes to be adsorbed on the organic impurities on chip passivation layer surface, metal ion and particle contaminant material because of heat factor accelerate dissolution, and ultrasonic cleaning station, for utilizing supersonic cavity principle, carries out secondary cleaning to passivated surface impurity.
2. diode corrosion cleaning according to claim 1, is characterized in that: the concrete steps of described method are as follows:
The first step, corrosion: choose the mixed liquor of following material as corrosive liquid, concrete HNO3:HF:CH3COOH:H2SO4=9:9:12:4, is then 25 DEG C ± 5 DEG C in temperature and corrodes immersion once;
Second step, passivation: during passivation, passivation technology raw materials and proportioning are:
H3PO4:H2O2:H2O=1:1:3, then in temperature 65 DEG C ± 10 DEG C passivation once;
3rd step, passivation impurity cleans: cleaning fluid is NH4OH:H2O2:H2O=1:1:5, is 25 DEG C ± 3 DEG C cleans once in temperature;
4th step, hot water injection soaks: be 55-70 DEG C in temperature, rinses and soaks 30S;
5th step, ultrasonic cleaning: at normal temperatures, by following standard cleaning once: high purity water flow is 3 tons/hour, supersonic frequency controls at 50-150 hertz; Scavenging period is 240-600 second.
3. diode according to claim 2 corrosion cleaning, is characterized in that: in described first step corrosive liquid, and the concentration of HNO3 is the concentration of 68.5% ± 2%:HF is that the concentration of 49% ± 0.5%:CH3COOH is for being more than or equal to 99.5%; The concentration of H2SO4 is 97% ± 1%.
4. diode according to claim 2 corrosion cleaning, is characterized in that: the concentration that in described second step passivation raw material, the concentration of H3PO4 is more than or equal to 85%, H2O2 is more than or equal to 35%.
5. diode corrosion cleaning according to claim 2, is characterized in that: in described 3rd step passivation impurity cleaning fluid, the concentration of the concentration 17% ± 1%, H2O2 of NH4OH is more than or equal to 35%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510384665.1A CN105070750A (en) | 2015-06-30 | 2015-06-30 | Diode corrosion cleaning technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510384665.1A CN105070750A (en) | 2015-06-30 | 2015-06-30 | Diode corrosion cleaning technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105070750A true CN105070750A (en) | 2015-11-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201510384665.1A Pending CN105070750A (en) | 2015-06-30 | 2015-06-30 | Diode corrosion cleaning technology |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101699615A (en) * | 2009-09-23 | 2010-04-28 | 镇江市港南电子有限公司 | Method for etching silicon wafer |
| CN101937845A (en) * | 2010-08-24 | 2011-01-05 | 如皋市日鑫电子有限公司 | Mesa treatment process of diode |
| CN102082092A (en) * | 2009-11-27 | 2011-06-01 | 中国振华集团永光电子有限公司 | Acid corrosion technology for glass passivated mesa diode |
| CN102881801A (en) * | 2011-07-12 | 2013-01-16 | 宏齐科技股份有限公司 | Back switching type light emitting diode packaging structure and manufacturing method thereof |
-
2015
- 2015-06-30 CN CN201510384665.1A patent/CN105070750A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101699615A (en) * | 2009-09-23 | 2010-04-28 | 镇江市港南电子有限公司 | Method for etching silicon wafer |
| CN102082092A (en) * | 2009-11-27 | 2011-06-01 | 中国振华集团永光电子有限公司 | Acid corrosion technology for glass passivated mesa diode |
| CN101937845A (en) * | 2010-08-24 | 2011-01-05 | 如皋市日鑫电子有限公司 | Mesa treatment process of diode |
| CN102881801A (en) * | 2011-07-12 | 2013-01-16 | 宏齐科技股份有限公司 | Back switching type light emitting diode packaging structure and manufacturing method thereof |
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Application publication date: 20151118 |