CN1254440A - Method for etching silicon wafer - Google Patents
Method for etching silicon wafer Download PDFInfo
- Publication number
- CN1254440A CN1254440A CN 98804760 CN98804760A CN1254440A CN 1254440 A CN1254440 A CN 1254440A CN 98804760 CN98804760 CN 98804760 CN 98804760 A CN98804760 A CN 98804760A CN 1254440 A CN1254440 A CN 1254440A
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- CN
- China
- Prior art keywords
- silicon wafer
- flushing
- corrosion
- size
- oxidant
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Abstract
A method for etching a silicon wafer includes the steps of: lapping a silicon wafer; etching the silicon wafer; and polishing the silicon wafer; wherein the etching step includes an etching treatment and a rinsing treatment, and at least an oxidizing agent is added to a rinse to be used for the rinsing treatment, thereby forming an oxidation film on a surface of the silicon wafer.
Description
The present invention relates to the caustic solution of silicon wafer.More particularly relate to provide the silicon wafer caustic solution of stable silicon wafer surface.
In the silicon wafer manufacturing process, with regard to the even shape that the damage on removing silicon wafer surface keeps silicon wafer surface simultaneously again, corrosion step is the step of a particular importance.Corrosion step is followed after grinding steps and before polishing step.Particularly, more and more stricter to the requirement of silicon wafer flatness along with semiconductor device is more and more littler.Be the evenness that is difficult to improve silicon wafer only, thereby require in corrosion step, to carry out to influence the accurate processing of silicon wafer surface shape by means of the control polishing step.In order to satisfy this requirement, not only improved the component of corrosive liquid recently, but also improved corrosion device itself.
Yet, because the purpose of corrosion step is the surface that will corrode silicon wafer, so on the surface of the silicon wafer that had just corroded, form oxide-film deficiently owing to the character of silicon, thereby the surface of silicon wafer presents hydrophobicity.
After just corroding, silicon wafer is washed processing so that prevent the carrying out of corrosion.Usually use deionized water to wash processing.Because deionized water does not have oxidizability, so kept the hydrophobicity of silicon wafer surface.Under this condition, the surface of silicon wafer is activated, foreign substance thereby be easy to adhere to silicon wafer surface.And in a single day foreign substance adheres to, and then foreign substance directly contacts silicon wafer, thereby is difficult to remove in the step of follow-up cleaning and so on these foreign substances.When flushing insufficient or when follow-up drying is insufficient, flushing liquor also can adhere to the hydrophobic surface of silicon wafer, the one-tenth drops.If this condition of maintenance, then after silicon wafer was by air dry, the vestige of water droplet just remained with the form of watermark.
This watermark is not only the vestige of deionized water.Water droplet absorbs airborne oxygen and by the oxidation of local irregularities ground, thereby can't dispose with APM liquid (that is the cleaning fluid for preparing with the method for super deionized water weak ammonia and hydrogen peroxide) in follow-up cleaning step.This defective not only usually occurs in the manufacturing process of silicon wafer, and occurs in the semiconductor device technology.
Consider these general issues, the purpose of this invention is to provide a kind of method of corroding silicon wafer, the method can be avoided the appearance of defective in advance in the corrosion treatment process.
According to the present invention, a kind of method of corroding silicon wafer is provided, it comprises the following step:
Grind silicon wafer;
The corrosion silicon wafer; And
The polished silicon wafer;
Corrosion step wherein comprises that corrosion treatment and flushing handle, and adds a kind of oxidant at least in the flushing that is used for washing processing, thereby forms oxide-film on the surface of silicon wafer.
Owing in the flushing that is used for preventing corrosion, added oxidant, nertralizer and surfactant or the size of ozone and so on; so the surface of silicon wafer is oxidized in the flushing processing procedure; thereby the surface with stable oxide film protection silicon wafer has prevented generation of defects.
Fig. 1 schematic diagram has illustrated in the caustic solution of silicon wafer of the present invention and in the conventional caustic solution of silicon wafer, the coherent condition of foreign substance.
Fig. 2 shows the effect that adds ozone in the flushing that is used for washing processing.
Describe below the present invention in detail.
At first, generality is described the manufacturing process of silicon wafer. To the silicon ingot that is formed by silicon single crystal, Order is cut, grinding, burn into polishing and cleaning, in order to obtain the finished silicon wafer. Then silicon wafer is sent to the operation of making semiconductor devices.
Corrosion step is by corrosion treatment and prevent the flushing processing of corrosion to form. Grinding silicon wafer Afterwards, the damage that is caused by suspension and so on is retained on the surface of silicon wafer. To silicon wafer Corrosion is in order to remove lip-deep damage. Specifically, in corrosion step, employing contains Hydrofluoric acid (HF), nitric acid (HNO3), acetic acid (CH3COOH) mixed acid and water, In order to remove the damage layer of silicon wafer surface.
After corrosion treatment, process with flushing thereupon. Flushing is processed usually to adopt fast and is infiltrated Wash, overflow flushing etc. Infiltrating fast in the flushing, the supply of deionized water and discharge are by heavy Again several times. In overflowing flushing, with deionized water from the bottom of container to the appearance that comprises silicon wafer Device is presented predetermined time, causes deionized water to be overflowed, and removes simultaneously the acid on the silicon wafer.
In the present invention, in the flushing that is used for preventing the corrosion of above-mentioned flushing in processing, at least Add the oxidant of a kind of ozone and so on, in order to form oxide-film at silicon wafer surface. In addition, Be preferably in the flushing and add nertralizer stopping corrosion reaction, and preferably add surfactant or Size is in order to reduce as far as possible stress on the silicon wafer surface.
The oxidant that the flushing that is used for corrosion step is processed without limits, can use ozone, The mixture of hydrogen peroxide, aqua ammonia and hydrogen peroxide, nitric acid and sulfuric acid etc.
Though the oxidant with ratio solvent ozone in deionized water of 0.5-40ppm and so on is that effectively from the viewpoint of economy, this ratio is preferably in the scope of 2-20ppm.Various ozoniferous methods are arranged, can adopt any method wherein.The temperature that flushing is handled also without limits.
By the way, nertralizer, surfactant and the size that joins in the flushing had no particular limits, can adopt the reagent of knowing.
Embodiment shown in reference to the accompanying drawings describes the present invention in more detail below.
Fig. 1 schematic diagram has illustrated in the caustic solution of silicon wafer of the present invention and in the conventional caustic solution of silicon wafer, the coherent condition of foreign substance.Reference number 1 expression silicon wafer.Fig. 1 (a) shows the silicon wafer that has just cut out from silicon ingot.(b) of Fig. 1 shows damage on the silicon wafer surface shown in (a) of Fig. 1 silicon wafer after being eliminated.
(c) of Fig. 1 shows the surface condition that the silicon wafer 1 that obtains is afterwards handled in flushing.One of them does not have oxide-film after the flushing of only adopting deionized water is handled.Other wafer has the oxide-film 2 that is formed on the silicon wafer surface after the flushing of the deionized water 1 that adopts the oxidant that wherein has ozone and so on is handled.
(d) of Fig. 1 shows the coherent condition of the pollutant 3 of foreign substance of adhering to silicon wafer 1 in storage process and so on.Only using under the flushing situation of deionized water, pollutant 3 and so on directly adheres to silicon wafer 1.
Fig. 2 shows the effect of the flushing processing that has added ozone in the flushing.
As obvious from result shown in Figure 2, than only handle with the flushing of deionized water, in flushing, use the flushing of ozone to handle and reduced generation of defects in the silicon wafer.
By the way, by means of under the optically focused condition, silicon wafer surface being estimated, obtained ratio of defects.
As mentioned above, according to the present invention, because by means of adding the oxidant of ozone and so on and on silicon wafer surface, formed oxide-film, so the generation of defects on the silicon wafer surface is restricted in the flushing that is used for washing processing; Thereby demonstrate the tangible improvement effect of performance of semiconductor device and rate of finished products etc.
According to top described, as seen reached several purpose of the present invention and obtained other favourable outcome.
Owing to can in said method, can make various changes and not surmount scope of the present invention, so should think that all be exemplary rather than restrictive with all the elements shown in the drawings comprise in the foregoing description.
Claims (8)
1. method of corroding silicon wafer, it comprises the following step:
Grind silicon wafer;
The corrosion silicon wafer; And
The polished silicon wafer;
Corrosion step wherein comprises that corrosion treatment and flushing handle, and adds a kind of oxidant at least in the flushing that is used for washing processing, thereby forms oxide-film on the surface of silicon wafer.
2. according to the method for the corrosion silicon wafer of claim 1, oxidant wherein is a kind of in the mixture, nitric acid, sulfuric acid of ozone, hydrogen peroxide, aqua ammonia and hydrogen peroxide.
3. according to the method for the corrosion silicon wafer of claim 2, wherein also in flushing, add surfactant or size.
4. according to the method for the corrosion silicon wafer of claim 2, wherein also in flushing, add nertralizer.
5. according to the method for the corrosion silicon wafer of claim 4, wherein also in flushing, add surfactant or size.
6. according to the method for the corrosion silicon wafer of claim 1, wherein also in flushing, add nertralizer.
7. according to the method for the corrosion silicon wafer of claim 6, wherein also in flushing, add surfactant or size.
8. according to the method for the corrosion silicon wafer of claim 1, wherein also in flushing, add surfactant or size.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP114556/1997 | 1997-05-02 | ||
| JP9114556A JPH10308387A (en) | 1997-05-02 | 1997-05-02 | Etching of silicon wafer |
| US7068098A | 1998-04-30 | 1998-04-30 | |
| US09/070,680 | 1998-04-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1254440A true CN1254440A (en) | 2000-05-24 |
Family
ID=26453300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 98804760 Pending CN1254440A (en) | 1997-05-02 | 1998-05-01 | Method for etching silicon wafer |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0978140A1 (en) |
| CN (1) | CN1254440A (en) |
| WO (1) | WO1998050948A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7759224B2 (en) | 2003-12-26 | 2010-07-20 | Renesas Technology Corp. | Fabrication method of semiconductor integrated circuit device |
| CN101290907B (en) * | 2003-12-26 | 2010-12-08 | 瑞萨电子株式会社 | Fabrication method of semiconductor integrated circuit device |
| CN103035479A (en) * | 2011-09-29 | 2013-04-10 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure forming method |
| CN104465315A (en) * | 2013-09-24 | 2015-03-25 | 工业和信息化部电子第五研究所 | Chip separation method for 3D stacked chip encapsulator |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6361407B1 (en) | 2000-08-02 | 2002-03-26 | Memc Electronic Materials, Inc. | Method of polishing a semiconductor wafer |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS649621A (en) * | 1987-07-01 | 1989-01-12 | Fujitsu Ltd | Surface treatment of semiconductor substrate |
| DE3738651A1 (en) * | 1987-11-13 | 1989-05-24 | Wacker Chemitronic | METHOD FOR THE HYDROPHILIZING AND / OR REMOVAL OF SURFACE TREATMENT OF SILICONE WINDOWS |
| JP2762230B2 (en) * | 1994-03-25 | 1998-06-04 | 信越半導体株式会社 | Storage method of silicon wafer |
| EP0718873A3 (en) * | 1994-12-21 | 1998-04-15 | MEMC Electronic Materials, Inc. | Cleaning process for hydrophobic silicon wafers |
-
1998
- 1998-05-01 EP EP98920143A patent/EP0978140A1/en not_active Withdrawn
- 1998-05-01 WO PCT/US1998/008936 patent/WO1998050948A1/en not_active Application Discontinuation
- 1998-05-01 CN CN 98804760 patent/CN1254440A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7759224B2 (en) | 2003-12-26 | 2010-07-20 | Renesas Technology Corp. | Fabrication method of semiconductor integrated circuit device |
| CN101290907B (en) * | 2003-12-26 | 2010-12-08 | 瑞萨电子株式会社 | Fabrication method of semiconductor integrated circuit device |
| CN103035479A (en) * | 2011-09-29 | 2013-04-10 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure forming method |
| CN103035479B (en) * | 2011-09-29 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | A kind of method for forming semiconductor structure |
| CN104465315A (en) * | 2013-09-24 | 2015-03-25 | 工业和信息化部电子第五研究所 | Chip separation method for 3D stacked chip encapsulator |
| CN104465315B (en) * | 2013-09-24 | 2017-04-05 | 工业和信息化部电子第五研究所 | The chip separation method of 3D Stacked Die Packaging devices |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1998050948A1 (en) | 1998-11-12 |
| EP0978140A1 (en) | 2000-02-09 |
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |