CN109727841A - The cleaning method of wafer - Google Patents
The cleaning method of wafer Download PDFInfo
- Publication number
- CN109727841A CN109727841A CN201711026883.3A CN201711026883A CN109727841A CN 109727841 A CN109727841 A CN 109727841A CN 201711026883 A CN201711026883 A CN 201711026883A CN 109727841 A CN109727841 A CN 109727841A
- Authority
- CN
- China
- Prior art keywords
- wafer
- nozzle
- center
- turntable
- ammonium hydroxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 24
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 22
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000007921 spray Substances 0.000 claims abstract description 7
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 4
- 239000008367 deionised water Substances 0.000 claims abstract description 4
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000005507 spraying Methods 0.000 claims description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 description 15
- 239000013078 crystal Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Abstract
Method for cleaning wafer of the invention includes: to provide the cleaning machine comprising turntable and nozzle；Wafer is fixed on the turntable, the nozzle is placed in the top of the wafer and is directed at the center of the wafer；The turntable rotation is controlled, and controls the nozzle and sprays ammonium hydroxide to clean the center of the wafer；It controls the nozzle and diametrically moves back and forth from the center of the wafer in another side edge of the one side edge of the wafer and the wafer, to clean the wafer；Wherein, the ammonium hydroxide is prepared according to 1L deionized water with the ratio of 400-500mL ammonia, and the temperature of the ammonium hydroxide is 150-190 DEG C, and the revolving speed of the turntable is 700-800rmp.This method can efficiently, quickly remove the residual film on wafer, to save time cost and human cost.
Description
Technical field
The present invention relates to semiconductor cleaning field more particularly to a kind of cleaning methods of wafer.
Background technique
With the development of super large-scale integration technique, semiconductor technology has come into the sub-micro epoch.Work
The development of skill will be so that will include that processor, memory, analog circuit, interface logic even radio circuit are integrated into one on a large scale
Chip on, form so-called SoC (system on chip).
In the manufacturing process of integrated circuit, usually figure is carved in crystal column surface, wherein essential will use
Film is imaged to carry out the development of figure, then removes film again.The method of traditional removal film is mostly completion hand-manipulated.
It is first impregnated with ammonium hydroxide, is then wiped several times by sponge cloth along a direction, film dissolution is made to be detached from crystal column surface.This method
The shortcomings that be: (1) soaking time needs manually to control, if overlong time, damages crystal column surface, if the time is too short,
Then trouble is caused to the removal of rear process；(2) under productivity, and the standard not quantified, cause being not thorough for cleaning.
It would therefore be highly desirable to which a kind of cleaning method of improved wafer is to remove the film on surface.
Summary of the invention
The purpose of the present invention is to provide a kind of cleaning methods of wafer, can efficiently, quickly remove residual on wafer
Film is stayed, to save time cost and human cost.
To achieve the above object, the cleaning method of wafer of the invention, comprising:
Cleaning machine comprising turntable and nozzle is provided；
Wafer is fixed on the turntable, the nozzle is placed in the top of the wafer and is aligned in the wafer
The heart；
The turntable rotation is controlled, and controls the nozzle and sprays ammonium hydroxide to clean the center of the wafer；
The nozzle is controlled from the center of the wafer diametrically in the one side edge of the wafer and the wafer
Another side edge move back and forth, to clean the wafer；
Wherein, the ammonium hydroxide is prepared according to 1L deionized water with the ratio of 400-500mL ammonia, and the temperature of the ammonium hydroxide is
150-190 DEG C, the revolving speed of the turntable is 700-800rmp.
Compared with prior art, the cleaning method of wafer of the invention uses centre bit of the nozzle first to the wafer of rotation
It sets and is cleaned, the cleaning then diametrically moved back and forth between the both sides of the edge of wafer from center is led to
It crosses special ammonium hydroxide to act on the high-efficiency dissolution of film, and combines high-speed rotating turntable, so that the film on wafer can be fast
Instant solution falls off and throws away outward, so that efficient quick removes film, saves human cost and time cost.
Preferably, the nozzle the wafer center dwell and spray ammonium hydroxide total time be 13-18s.
Preferably, the nozzle is from the center of the wafer diametrically in the one side edge of the wafer and the crystalline substance
The total time that round another side edge moves back and forth and spray ammonium hydroxide is 40-50s.
Preferably, the nozzle is from the center of the wafer diametrically in the one side edge of the wafer and the crystalline substance
The speed that round another side edge moves back and forth is 50-60 mm/second.
Detailed description of the invention
Fig. 1 is the flow chart of one embodiment of the cleaning method of wafer of the invention.
Specific embodiment
It is described further below with reference to cleaning method of the embodiment to wafer of the invention, but is not so limited this hair
It is bright.
The present invention is directed to the films on cleaning wafer, and but it is not limited to this.(figure is not for the cleaning device of wafer of the invention
Show) it include cleaning machine and control device, wherein and cleaning machine includes turntable for fixing wafer and is located above wafer
Nozzle；Control device includes the rotating control assembly connecting with turntable and the mobile controller that connect with nozzle.
When rotating control assembly controls turntable rotation, wafer thereon is also rotated with it；Meanwhile it controlling nozzle and spraying ammonia
Aqueous cleaning and the sprinkling position movement for controlling nozzle, thus each position of cleaning wafer.Specifically, the end distance of nozzle
The distance of crystal column surface can be 2-10cm.
As shown in Figure 1, one embodiment of the cleaning method of wafer provided by the invention the following steps are included:
S101 provides the cleaning machine comprising turntable and nozzle；
Wafer is fixed on the turntable by S102, and the nozzle is placed in the top of the wafer and is directed at the crystalline substance
Round center；
S103 controls the turntable rotation, and controls the nozzle and spray ammonium hydroxide to clean the center of the wafer；
S104 controls the nozzle from the center of the wafer diametrically in the one side edge of the wafer and described
Another side edge of wafer moves back and forth；
S105, control turntable stop rotating.
Specifically, in step s101, wafer is fixed on a spinstand, and nozzle is fixed on the position of the top 2-10cm of wafer
It sets and can move back and forth above wafer, wafer is cleaned for spraying ammonium hydroxide cleaning solution.
Specifically, ammonium hydroxide of the invention is prepared according to 1L deionized water with the ratio of 400-500mL ammonia, and the temperature of ammonium hydroxide is
150-190 DEG C, which has significant effect to the removal of film.
In step s 102, wafer of the surface with film is fixed on a spinstand, and nozzle is fixed on the top of wafer
The position of 2-10cm and the center for being directed at wafer.
In step s 103, turntable is controlled by rotating control assembly and is rotated, so that wafer is driven to rotate, in wafer
In cleaning process, wafer persistently rotates, until cleaning process terminates to stop rotating.Wherein, the revolving speed of turntable is 700-
800rmp.High-revolving turntable increases nozzle to the frequency of wafer cleaning, to quickly remove the film of crystal column surface
Residual.The position of cleaning is the center of wafer first, i.e. the center location of nozzle alignment wafer.Specifically, nozzle is in crystalline substance
The total time of round center dwell and ejection ammonium hydroxide is 13-18s, and flow velocity can make a choice according to the actual situation, such as flow velocity
It is 1-2 liters/min.
In step S104, control nozzle is moved to the both sides of the edge of wafer from the center of wafer.Specifically, nozzle
The wherein one side edge position of wafer is first diametrically moved to from the center of wafer, then from one side edge position along straight
Diameter direction is moved to the marginal position of the opposite side of wafer, and moves back and forth between the position of two sides, reciprocal with this.Preferably
Ground, the movement speed of nozzle can be 50-60 mm/second, the total time moved back and forth between one side edge and another side edge
For 40-50s, also that is, the total time for moving back and forth the ammonium hydroxide of ejection between two sides is 40-50s.In another embodiment,
The time of the nozzle one side edge position that (mobile initial position) is moved to wafer from the central position is 5-10s.Entire clear
During washing, turntable does not stop rotating, and nozzle does not also stop spraying ammonium hydroxide, until cleaning terminates.
In this way, the cleaning method of the wafer with film first carries out clearly the center of the wafer of rotation using nozzle
It washes, the cleaning then diametrically moved back and forth between the both sides of the edge of wafer from center passes through special ammonia
Water acts on the high-efficiency dissolution of film, and combines high-speed rotating turntable, falls off so that the film on wafer is rapidly dissolvable
And throw away outward, so that efficient quick removes film, save human cost and time cost.
Above disclosed is only presently preferred embodiments of the present invention, cannot limit the right of the present invention with this certainly
Range, therefore according to equivalent variations made by scope of the present invention patent, it is still within the scope of the present invention.
Claims (4)
1. a kind of cleaning method of wafer, comprising:
Cleaning machine comprising turntable and nozzle is provided；
Wafer is fixed on the turntable, the nozzle is placed in the top of the wafer and is directed at the center of the wafer；
The turntable rotation is controlled, and controls the nozzle and sprays ammonium hydroxide to clean the center of the wafer；
The nozzle is controlled from the center of the wafer diametrically in the another of the one side edge of the wafer and the wafer
One side edge moves back and forth, to clean the wafer；It is characterized by:
The ammonium hydroxide is prepared according to 1L deionized water with the ratio of 400-500mL ammonia, and the temperature of the ammonium hydroxide is 150-190 DEG C,
The revolving speed of the turntable is 700-800rmp.
2. the cleaning method of wafer as described in claim 1, it is characterised in that: center dwell of the nozzle in the wafer
And the total time for spraying ammonium hydroxide is 13-18s.
3. the cleaning method of wafer as described in claim 1, it is characterised in that: the nozzle is from the center of the wafer along straight
Diameter direction is in the total time that the one side edge of the wafer and another side edge of the wafer move back and forth and spray ammonium hydroxide
40-50s。
4. the cleaning method of wafer as described in claim 1, it is characterised in that: the nozzle is from the center of the wafer along straight
Diameter direction is 50-60 mm/second in the speed that the one side edge of the wafer and another side edge of the wafer move back and forth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711026883.3A CN109727841A (en) | 2017-10-27 | 2017-10-27 | The cleaning method of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711026883.3A CN109727841A (en) | 2017-10-27 | 2017-10-27 | The cleaning method of wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109727841A true CN109727841A (en) | 2019-05-07 |
Family
ID=66292089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711026883.3A Pending CN109727841A (en) | 2017-10-27 | 2017-10-27 | The cleaning method of wafer |
Country Status (1)
| Country | Link |
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| CN (1) | CN109727841A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110508537A (en) * | 2019-08-29 | 2019-11-29 | 南通大学 | Hydrojet efficient appliances and method in a kind of corrosion cleaning of improvement large-sized wafer |
| CN112992657A (en) * | 2021-03-01 | 2021-06-18 | 昆山基侑电子科技有限公司 | Wafer cleaning method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201126583A (en) * | 2010-01-28 | 2011-08-01 | United Microelectronics Corp | Method of wafer cleaning and apparatus of wafer cleaning |
| CN103182392A (en) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | Wafer cleaning method |
| CN103365075A (en) * | 2012-03-26 | 2013-10-23 | 上海宏力半导体制造有限公司 | Photolithographic process method for eliminating lathe work on surface of wafer |
| CN104966675A (en) * | 2015-07-06 | 2015-10-07 | 麦斯克电子材料有限公司 | Method of protecting part of a silicon dioxide film on the surface of a silicon chip by using a blue film |
-
2017
- 2017-10-27 CN CN201711026883.3A patent/CN109727841A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201126583A (en) * | 2010-01-28 | 2011-08-01 | United Microelectronics Corp | Method of wafer cleaning and apparatus of wafer cleaning |
| CN103182392A (en) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | Wafer cleaning method |
| CN103365075A (en) * | 2012-03-26 | 2013-10-23 | 上海宏力半导体制造有限公司 | Photolithographic process method for eliminating lathe work on surface of wafer |
| CN104966675A (en) * | 2015-07-06 | 2015-10-07 | 麦斯克电子材料有限公司 | Method of protecting part of a silicon dioxide film on the surface of a silicon chip by using a blue film |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110508537A (en) * | 2019-08-29 | 2019-11-29 | 南通大学 | Hydrojet efficient appliances and method in a kind of corrosion cleaning of improvement large-sized wafer |
| CN112992657A (en) * | 2021-03-01 | 2021-06-18 | 昆山基侑电子科技有限公司 | Wafer cleaning method |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
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| RJ01 | Rejection of invention patent application after publication | ||
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Application publication date: 20190507 |