CN103311094A - Method for processing wafer surface - Google Patents
Method for processing wafer surface Download PDFInfo
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- CN103311094A CN103311094A CN2012100709127A CN201210070912A CN103311094A CN 103311094 A CN103311094 A CN 103311094A CN 2012100709127 A CN2012100709127 A CN 2012100709127A CN 201210070912 A CN201210070912 A CN 201210070912A CN 103311094 A CN103311094 A CN 103311094A
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- ozone
- ohmic contact
- crystal column
- column surface
- wafer
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- 238000000034 method Methods 0.000 title claims abstract description 23
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 37
- 238000004381 surface treatment Methods 0.000 claims abstract description 18
- 239000000956 alloy Substances 0.000 claims abstract description 13
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 13
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052753 mercury Inorganic materials 0.000 claims abstract description 5
- 239000010453 quartz Substances 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000013078 crystal Substances 0.000 claims description 26
- 238000010926 purge Methods 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 abstract description 10
- 230000008569 process Effects 0.000 abstract description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 7
- 238000004140 cleaning Methods 0.000 abstract description 3
- 239000003344 environmental pollutant Substances 0.000 abstract description 2
- 231100000719 pollutant Toxicity 0.000 abstract description 2
- 230000009467 reduction Effects 0.000 abstract description 2
- 239000002957 persistent organic pollutant Substances 0.000 abstract 1
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 230000005669 field effect Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000006101 laboratory sample Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000005516 deep trap Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
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Abstract
The invention discloses a method for processing the surface of a wafer, which is characterized in that an ultraviolet Ozone cleaning system (UVOCS) is adopted to carry out ultraviolet and Ozone (UV/Ozone) surface processing on the surface of the wafer after ohmic contact alloy, namely, a low-pressure quartz mercury lamp is adopted to generate ultraviolet rays and Ozone in the ranges of 254nm and 185nm to carry out UV/Ozone surface processing on the surface of the wafer for 30 minutes. The invention reduces the organic pollutant or carbon pollutant surface treatment method introduced in the process of the wafer surface, adopts UV/Ozone surface treatment after ohmic contact alloy to greatly improve the electrical property of ohmic contact, makes the I-V characteristic curve more steep, achieves the voltage reduction corresponding to the saturation current, and improves the current symmetry.
Description
Technical field
The present invention relates to AlGaN/GaN high electron mobility field-effect transistor preparing technical field, relate in particular to a kind of method of after finishing AlGaN/GaN high electron mobility field-effect transistor (HEMT) ohmic contact alloy, crystal column surface being processed.
Background technology
In AlGaN/GaN HEMT, source electrode dead resistance and drain electrode dead resistance have important impact to device performance, will directly affect the device power gain, also can cause simultaneously the extrinsic mutual conductance of device to reduce, and source-drain current reduces, and knee-point voltage increases.In source electrode dead resistance and drain electrode dead resistance, contact resistance plays a leading role, and contact resistance depends primarily on the device ohmic contact characteristic, therefore good ohmic contact is the key point that reduces device source dead resistance, drain terminal dead resistance, conducting resistance and knee-point voltage, therefore improves ohmic contact craft reduction source electrode and drain electrode dead resistance are played vital effect.
Summary of the invention
The technical problem that (one) will solve
For the problems referred to above, the purpose of this invention is to provide a kind of method that crystal column surface is processed, organic pollution or the carbon contamination thing introduced in technical process to reduce crystal column surface improve the ohmic contact electrology characteristic, reduce source electrode and drain electrode dead resistance.
(2) technical scheme
For achieving the above object, the invention provides a kind of method that crystal column surface is processed, the method is to adopt UV ozone purging system (Ultra-Violet Ozone Cleaning Systems, UVOCS) that crystal column surface is carried out ultraviolet ray and ozone (UV/Ozone) surface treatment behind ohmic contact alloy.
In the such scheme, described employing UVOCS carries out the UV/Ozone surface treatment to crystal column surface, is that ultraviolet ray and the ozone that adopts the low pressure quartz mercury lamp to produce 254nm and 185nm scope carries out 30 minutes UV/Ozone surface treatment to crystal column surface.
(3) beneficial effect
The method that crystal column surface is processed provided by the invention, organic pollution or carbon contamination thing that crystal column surface is introduced have been reduced in technical process, so that the ohmic contact electrology characteristic improves greatly, the I-V characteristic curve is more steep, the corresponding voltage of the electric current that reaches capacity reduces, and the symmetry of electric current obtains fine improvement.
Description of drawings
Fig. 1 adopts UV/Ozone provided by the invention to process front and back 60um testing tube I-V Character Comparison schematic diagram behind ohmic contact alloy;
Fig. 2 (a) to Fig. 2 (d) be behind the ohmic contact alloy crystal column surface through with without the UV/Ozone surface treatment, the XPS spectrum figure of its C element, O element, N element and Ga element contrasts schematic diagram;
Wherein, Fig. 2 (a) is C1s (the 1s orbital electron of C element), Fig. 2 (b) is O1s (the 1s orbital electron of O element), and Fig. 2 (c) is N1s (the 1s orbital electron of N element), and Fig. 2 (d) is Ga2p3 (the 2p3 orbital electron of Ga element).
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
The method that crystal column surface is processed provided by the invention, it realizes that principle is: after finishing AlGaN/GaN high electron mobility field-effect transistor (HEMT) ohmic contact alloy, utilize the low pressure quartz mercury lamp to produce ultraviolet ray and the ozone strong oxidizing ability of 254nm and 185nm scope, organic pollution that technical process introduces or carbon contamination thing are excited after absorbing 254nm length ultraviolet line or decompose the pollutant that is excited and ion-oxygen atomic reaction formation gas such as CO
2, H
2O etc. and volatilizing.
Therefore, the method that crystal column surface is processed provided by the invention, behind ohmic contact alloy, to adopt UV ozone purging system (Ultra-Violet Ozone Cleaning Systems, UVOCS) that crystal column surface is carried out ultraviolet ray and ozone (UV/Ozone) surface treatment.Wherein, described employing UVOCS carries out the UV/Ozone surface treatment to crystal column surface, is that ultraviolet ray and the ozone that adopts the low pressure quartz mercury lamp to produce 254nm and 185nm scope carries out 30 minutes UV/Ozone surface treatment to crystal column surface.
In AlGaN/GaN HEMT manufacture craft process, unavoidably can introduce carbon (C) atomic impurity, carbon atom might form deep energy level acceptor state trap trapped electrons in the GaN epitaxial material, cause the dead resistance increases such as device source electrode, knee-point voltage increases.The C atomic impurity can be effectively removed in the UV/Ozone surface treatment, reduces it forms Deep Level Traps in GaN possibility, thereby improves the I-V characteristic behind the ohmic contact alloy.Moreover, because the strong oxidation of ozone forms thin oxide layer at crystal column surface, be equivalent to passivation, suppress the surface state trapped electron, so that electric current increases, current symmetry is improved.
The present invention is by adopting UVOCS crystal column surface to be carried out 30 minutes UV/Ozone surface treatment behind ohmic contact alloy, organic pollution or carbon contamination thing that crystal column surface is introduced have been reduced in technical process, improved the ohmic contact electrology characteristic, source electrode and drain electrode dead resistance have been reduced, it is final so that the device I-V properties curve is more steep, the corresponding voltage of the electric current that reaches capacity reduces, and test result as shown in Figure 1.
With reference to Fig. 1, behind ohmic contact alloy, experiment slice divided simultaneously into two laboratory samples, pass through respectively with without the UV/Ozone surface treatment, adopt x-ray photoelectron spectroscopy (XPS) that laboratory sample is carried out surface analysis, the main variation of paying close attention to C, O, Ga, N element, test result as shown in Figure 2, the contrast of the ratio of the ratio of its C/N, the ratio of O/N and Ga/N is as shown in table 1, table 1 is that crystal column surface passes through with after the UV/Ozone surface treatment behind the ohmic contact alloy, the correction data of the ratio of the ratio of C/N, the ratio of O/N and Ga/N.As can be seen from Table 1, after the UV/Ozone surface treatment, its surface carbon atom content reduces, and has verified that the UV/Ozone surface treatment can effectively remove the carbon contamination thing, and oxygen atom content increases and the rapid increase of Ga2p3 content represents crystal column surface because the strong oxidation of ozone and so that GaO
xThe generation of oxide layer.
| C/N | O/N | Ga/N | |
| Do not process through UV/Ozone | 1.520 | 0.391 | 0.0744 |
| Process through UV/Ozone | 0.736 | 0.867 | 0.180 |
Table 1
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (2)
1. the method that crystal column surface is processed is characterized in that, the method is to adopt the UV ozone purging system that crystal column surface is carried out ultraviolet ray and ozone surface treatment behind ohmic contact alloy.
2. the method that crystal column surface is processed according to claim 1, it is characterized in that, described employing UV ozone purging system carries out ultraviolet ray and ozone surface treatment to crystal column surface, is that ultraviolet ray and the ozone that adopts the low pressure quartz mercury lamp to produce 254nm and 185nm scope carries out 30 minutes ultraviolet ray and ozone surface treatment to crystal column surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100709127A CN103311094A (en) | 2012-03-16 | 2012-03-16 | Method for processing wafer surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100709127A CN103311094A (en) | 2012-03-16 | 2012-03-16 | Method for processing wafer surface |
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|---|---|
| CN103311094A true CN103311094A (en) | 2013-09-18 |
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| CN2012100709127A Pending CN103311094A (en) | 2012-03-16 | 2012-03-16 | Method for processing wafer surface |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576529A (en) * | 2013-10-10 | 2015-04-29 | 株式会社迪思科 | Wafer processing method |
| CN104637876A (en) * | 2013-11-06 | 2015-05-20 | 株式会社迪思科 | Belt diffusion device |
| CN105140274A (en) * | 2015-08-13 | 2015-12-09 | 长安大学 | ZnxAg(1-x)NyO(1-y) nano array/Ag schottky junction and preparation method thereof |
| CN109300773A (en) * | 2018-08-15 | 2019-02-01 | 上海华力集成电路制造有限公司 | The surface treatment method of wafer |
| CN110681624A (en) * | 2019-09-02 | 2020-01-14 | 山西烁科晶体有限公司 | Final cleaning method for silicon carbide single crystal polished wafer substrate |
| CN112683636A (en) * | 2020-12-11 | 2021-04-20 | 南京大学 | Method for rapidly removing carbon in-situ transmission electron microscope sample preparation |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000208464A (en) * | 1999-01-13 | 2000-07-28 | Ultra Clean Technology Kaihatsu Kenkyusho:Kk | Photochemical ozone water supply apparatus |
| CN1269602A (en) * | 2000-04-11 | 2000-10-11 | 北京高力通科技开发公司 | Ultraviolet surface cleaning machine |
| CN1787178A (en) * | 2004-12-08 | 2006-06-14 | 中国电子科技集团公司第四十六研究所 | Method for cleaning gallium arsenide crystal chip |
-
2012
- 2012-03-16 CN CN2012100709127A patent/CN103311094A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000208464A (en) * | 1999-01-13 | 2000-07-28 | Ultra Clean Technology Kaihatsu Kenkyusho:Kk | Photochemical ozone water supply apparatus |
| CN1269602A (en) * | 2000-04-11 | 2000-10-11 | 北京高力通科技开发公司 | Ultraviolet surface cleaning machine |
| CN1787178A (en) * | 2004-12-08 | 2006-06-14 | 中国电子科技集团公司第四十六研究所 | Method for cleaning gallium arsenide crystal chip |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576529A (en) * | 2013-10-10 | 2015-04-29 | 株式会社迪思科 | Wafer processing method |
| CN104576529B (en) * | 2013-10-10 | 2019-01-01 | 株式会社迪思科 | The processing method of chip |
| CN104637876A (en) * | 2013-11-06 | 2015-05-20 | 株式会社迪思科 | Belt diffusion device |
| CN104637876B (en) * | 2013-11-06 | 2019-02-15 | 株式会社迪思科 | Band extension fixture |
| CN105140274A (en) * | 2015-08-13 | 2015-12-09 | 长安大学 | ZnxAg(1-x)NyO(1-y) nano array/Ag schottky junction and preparation method thereof |
| CN105140274B (en) * | 2015-08-13 | 2018-02-06 | 长安大学 | A kind of ZnxAg (1 x) NyO (1 y) nano-array/Ag schottky junctions and preparation method thereof |
| CN109300773A (en) * | 2018-08-15 | 2019-02-01 | 上海华力集成电路制造有限公司 | The surface treatment method of wafer |
| CN110681624A (en) * | 2019-09-02 | 2020-01-14 | 山西烁科晶体有限公司 | Final cleaning method for silicon carbide single crystal polished wafer substrate |
| CN112683636A (en) * | 2020-12-11 | 2021-04-20 | 南京大学 | Method for rapidly removing carbon in-situ transmission electron microscope sample preparation |
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Application publication date: 20130918 |