CN101935843A - Cleaning method after epitaxial wafer thinning - Google Patents
Cleaning method after epitaxial wafer thinning Download PDFInfo
- Publication number
- CN101935843A CN101935843A CN 201010253488 CN201010253488A CN101935843A CN 101935843 A CN101935843 A CN 101935843A CN 201010253488 CN201010253488 CN 201010253488 CN 201010253488 A CN201010253488 A CN 201010253488A CN 101935843 A CN101935843 A CN 101935843A
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- CN
- China
- Prior art keywords
- cleaning
- epitaxial wafer
- wafer thinning
- cleaning method
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
The invention discloses a cleaning method after epitaxial wafer thinning. The method uses a cleaning liquid which comprises the following components by weight percent: 91%-92% of H2O, 0.7%-0.8% of NaOH and 7%-8% of 3F cleaning agent, wherein the cleaning temperature is 55-60 DEG C, and the cleaning time is 8 minutes per slot. By adopting the method of the invention, the production cost is reduced, the temperature is increased, and the defect of poor cleaning effect is overcome.
Description
Technical field
The present invention relates to a kind of three purging methods that expand behind the sheet attenuates.
Background technology
The chemical reagent that tradition three expands the purging method employing behind the sheet attenuate is: H
2O
2/ NH
4OH/H
2O=1/1/5, cost is higher, add that hydrogen peroxide and ammoniacal liquor are volatile reagent, so mixed solution is shorter working lipe.
Summary of the invention
The present invention seeks to provides a kind of three purging methods that expand behind the sheet attenuates at the defective that prior art exists.
The present invention adopts following technical scheme for achieving the above object:
The purging method that the present invention three expands behind the sheet attenuate is as follows:
The employing scavenging solution is as follows:
H
2O 91％～92％，
NaOH 0.7％～0.8％，
3F clean-out system 7%～8%,
Cleaning temperature is: 55～60 ℃,
Scavenging period is: 8 minutes every grooves.
The present invention has saved production cost, has improved temperature, has overcome the defective of cleaning performance difference.
Embodiment
Embodiment 1:
H
2O 12990ml，
NaOH 95ml，
3F clean-out system 645ml,
Cleaning temperature is: 55 ℃,
Scavenging period is: 8 minutes every grooves.
Clean three expansion sheets later, surface attachment impurity is significantly improved with respect to the scavenging solution degree of cleaning of background technology, reaches 98.6%.
Embodiment 2:
H
2O 13000ml，
NaOH 100ml，
3F clean-out system 650ml,
Cleaning temperature is: 58 ℃,
Scavenging period is: 8 minutes every grooves.
Clean three expansion sheets later, surface attachment impurity is significantly improved with respect to the scavenging solution degree of cleaning of background technology, reaches 99%.
Embodiment 3:
H
2O 13010ml，
NaOH 105ml，
3F clean-out system 655ml,
Cleaning temperature is: 60 ℃,
Scavenging period is: 8 minutes every grooves.
Clean three expansion sheets later, surface attachment impurity is significantly improved with respect to the scavenging solution degree of cleaning of background technology, reaches 98.7%.
Claims (1)
1. purging method that expands behind the sheet attenuate is characterized in that described method is as follows:
The employing scavenging solution is as follows:
H
2O 91％～92％，
NaOH 0.7％～0.8％，
3F clean-out system 7%～8%,
Cleaning temperature is: 55～60 ℃,
Scavenging period is: 8 minutes every grooves.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010253488 CN101935843A (en) | 2010-08-13 | 2010-08-13 | Cleaning method after epitaxial wafer thinning |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010253488 CN101935843A (en) | 2010-08-13 | 2010-08-13 | Cleaning method after epitaxial wafer thinning |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101935843A true CN101935843A (en) | 2011-01-05 |
Family
ID=43389401
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010253488 Pending CN101935843A (en) | 2010-08-13 | 2010-08-13 | Cleaning method after epitaxial wafer thinning |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101935843A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1787178A (en) * | 2004-12-08 | 2006-06-14 | 中国电子科技集团公司第四十六研究所 | Method for cleaning gallium arsenide crystal chip |
-
2010
- 2010-08-13 CN CN 201010253488 patent/CN101935843A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1787178A (en) * | 2004-12-08 | 2006-06-14 | 中国电子科技集团公司第四十六研究所 | Method for cleaning gallium arsenide crystal chip |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20110105 |