JPH06196465A - Semiconductor wafer cleaning device - Google Patents

Semiconductor wafer cleaning device

Info

Publication number
JPH06196465A
JPH06196465A JP34420992A JP34420992A JPH06196465A JP H06196465 A JPH06196465 A JP H06196465A JP 34420992 A JP34420992 A JP 34420992A JP 34420992 A JP34420992 A JP 34420992A JP H06196465 A JPH06196465 A JP H06196465A
Authority
JP
Japan
Prior art keywords
chambers
wafer
cleaning device
semiconductor wafer
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP34420992A
Other languages
Japanese (ja)
Inventor
Akira Denda
彰 傅田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JFE Steel Corp
Original Assignee
Kawasaki Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawasaki Steel Corp filed Critical Kawasaki Steel Corp
Priority to JP34420992A priority Critical patent/JPH06196465A/en
Publication of JPH06196465A publication Critical patent/JPH06196465A/en
Withdrawn legal-status Critical Current

Links

Abstract

PURPOSE:To enable a cleaning device where a semiconductor wafer is chemically treated and cleaned with pure water to be enhanced in throughput and to prevent dried water droplet marks and a natural oxide film from being produced on the surface of wafers in transit. CONSTITUTION:Treating chambers 2, 3, 4, and 5 are continuously connected together, a rotating device 13 equipped with a rotary disc 10 which holds a wafer 11 is made to move through the chambers 2 to 5 one after another. At this point, partitioning panels 22, 32, and 42 of the chambers 2 to 5 are made to recede upwards. Spray nozzles 21, 31, 41, and 51 are provided inside the chambers 2 to 5 respectively, and discharge orifices 23, 33, 43, and 53 of waste liquid are also provided respectively.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体ウエハを基板とす
る半導体素子製造工程における半導体ウエハの洗浄装置
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer cleaning apparatus in a semiconductor element manufacturing process using a semiconductor wafer as a substrate.

【0002】[0002]

【従来の技術】従来、半導体ウエハの湿式洗浄装置は、
回転スプレー式洗浄装置と、浸漬式洗浄装置に大別でき
る。回転スプレー式洗浄装置では、図2に示すように、
単一の処理室6内でウエハ保持枠12に保持されたウエ
ハ11を回転板10によって回転させながら、薬液や純
水を順次スプレー61から噴出して処理する。浸漬式洗
浄装置では図3に示すように、処理を行う薬液槽10
0、120、純水槽110、130、140、150等
の浸漬槽を独立に並べて設置し、ロボット170によっ
てウエハをこれらの浸漬槽に順次浸漬して引上げ、次の
浸漬槽に順次移動させて処理を進める。
2. Description of the Related Art Conventionally, a semiconductor wafer wet cleaning apparatus is
It can be roughly classified into a rotary spray type cleaning device and an immersion type cleaning device. In the rotary spray type cleaning device, as shown in FIG.
While the wafer 11 held by the wafer holding frame 12 is rotated by the rotating plate 10 in the single processing chamber 6, chemicals and pure water are sequentially ejected from the spray 61 for processing. In the immersion type cleaning device, as shown in FIG.
0, 120, deionized water tanks 110, 130, 140, 150, etc. are independently arranged side by side, and the robot 170 sequentially dips and pulls the wafers in these dipping tanks and sequentially moves them to the next dipping tank. Proceed.

【0003】[0003]

【発明が解決しようとする課題】回転スプレー式洗浄装
置は単一の処理室内でスプレー液を順次切り替えて処理
を行うので一連のバッチの処理工程が終了するまで、次
のバッチのウエハを投入することができないため、スル
ープットが低いという問題がある。浸漬式洗浄装置は薬
液槽、純水等の浸漬槽を個々にもち、ロボット等の循環
設備等を有し、また開放槽のため設置室の雰囲気調整を
必要とし、例えば処理の前段と後段の室を天井180か
らのカーテン190で分離し、水槽140中を通してウ
エハを移送する必要があるなど、広い占有面積を必要と
する。なお、処理の最終段にスピンドライヤ160を必
要とする。
Since the rotary spray type cleaning apparatus performs processing by sequentially switching the spray liquid in a single processing chamber, the next batch of wafers is loaded until the processing steps of a series of batches are completed. Therefore, there is a problem that throughput is low. The immersion type cleaning device has a chemical solution tank, a pure water immersion tank, etc., and has circulation equipment such as robots. Since it is an open tank, it is necessary to adjust the atmosphere of the installation chamber. A large occupied area is required, for example, it is necessary to separate the chamber by the curtain 190 from the ceiling 180 and transfer the wafer through the water tank 140. The spin dryer 160 is required at the final stage of the process.

【0004】本発明は、高スループットを得ると共に装
置占有面積を少なくした洗浄装置を提供することを目的
とする。
It is an object of the present invention to provide a cleaning device which has a high throughput and a small device occupation area.

【0005】[0005]

【課題を解決するための手段】本発明は、上記問題点を
解決するために、半導体ウエハの薬液処理、純水洗浄を
行う複数のスプレーチャンバを連設し、この連設したス
プレーチャンバを順次ウエハを移動させる移動装置を設
け、各チャンバの連設部には開閉自在な仕切りカーテン
を設けたことを特徴とする半導体ウエハの洗浄装置を提
供するものである。
SUMMARY OF THE INVENTION In order to solve the above problems, the present invention provides a plurality of spray chambers for treating a semiconductor wafer with a chemical solution and cleaning with pure water, and the spray chambers are sequentially connected. A cleaning device for a semiconductor wafer, characterized in that a moving device for moving a wafer is provided, and a partition curtain that can be opened and closed is provided at a continuous portion of each chamber.

【0006】[0006]

【作用】本発明は従来の回転スプレー式洗浄装置と浸漬
式洗浄装置の利点を合わせもった装置である。複数のス
プレーチャンバを並べて設置し、ウエハを移動させる。
ウエハが次工程に進んだ時点で次のバッチのウエハを投
入することによりスループットが向上する。占有面積は
単一チャンバのスプレー式洗浄装置より大きくなるが、
浸漬式洗浄装置より少ない。
The present invention is an apparatus which combines the advantages of the conventional rotary spray type cleaning apparatus and the conventional immersion type cleaning apparatus. A plurality of spray chambers are installed side by side and the wafer is moved.
Throughput is improved by loading the next batch of wafers when the wafer advances to the next process. Takes up more space than a single chamber spray cleaner,
Less than immersion cleaning equipment.

【0007】[0007]

【実施例】図1に本発明の実施例装置1の側面図を示し
た。この実施例は処理室2、3、4、5を連設してお
り、各室にはウエハ11を保持する回転円板10を備え
た回転装置13が図の背面から各室内に挿入されてい
る。各室内には、スプレーノズル21、31、41、5
1がそえぞれ設けられ、排液の排出口23、33、4
3、53を備えている。回転装置13は、処理室2、
3、4、5内に順次移動することができ、そのとき、各
室の仕切板22、32、42は上方に退避する。
EXAMPLE FIG. 1 shows a side view of an apparatus 1 according to an embodiment of the present invention. In this embodiment, processing chambers 2, 3, 4, 5 are connected in series, and a rotating device 13 having a rotating disk 10 for holding a wafer 11 is inserted into each chamber from the back side of the drawing. There is. Each room has a spray nozzle 21, 31, 41, 5
1, respectively, and drainage outlets 23, 33, 4 for draining liquid.
3, 53 are provided. The rotating device 13 includes the processing chamber 2,
The partition plates 22, 32, 42 of the respective chambers are retracted upwards.

【0008】処理室2及び処理室5では図の背面が開放
可能となっており、回転装置13の処理室への出入り、
ウエハ11の装架、脱着が可能である。処理室2はSC
−1処理、処理室4はSC−2処理、処理室3、5は純
水リンス処理を行い、処理室5では水切り、乾燥も行
う。以下の(a)〜(e)の洗浄を行った場合、図1の
実施例装置と従来の図2、図3に示す装置のスループッ
トを比較した。各処理時間は次の通りである。 (a)SC−1処理:10min (b)純水リンス:10min (c)SC−2処理:10min (d)純水リンス:10min (e)乾燥:5min スループットは、図2の回転スプレー式洗浄装置では
1.33バッチ/hr、図3の浸漬式洗浄装置では6バ
ッチ/hr、図1の実施例では、6バッチ/hrであっ
た。
The rear surfaces of the processing chambers 2 and 5 can be opened so that the rotating device 13 can move in and out of the processing chambers.
The wafer 11 can be mounted and demounted. Processing room 2 is SC
-1 processing, SC-2 processing in the processing chamber 4, pure water rinsing processing in the processing chambers 3 and 5, and draining and drying in the processing chamber 5. When the following washings (a) to (e) were performed, the throughputs of the apparatus of the embodiment shown in FIG. 1 and the conventional apparatuses shown in FIGS. 2 and 3 were compared. Each processing time is as follows. (A) SC-1 treatment: 10 min (b) Pure water rinse: 10 min (c) SC-2 treatment: 10 min (d) Pure water rinse: 10 min (e) Drying: 5 min Throughput is the rotary spray cleaning of FIG. The apparatus had 1.33 batches / hr, the immersion cleaning apparatus of FIG. 3 had 6 batches / hr, and the example of FIG. 1 had 6 batches / hr.

【0009】また、実施例は占有面積として浸漬式洗浄
槽に対し、プール槽140、ファイナルリンス槽15
0、スピンドライヤ160の分だけ小さくなった。
Further, in the embodiment, the pool area 140 and the final rinse tank 15 are occupied areas as compared with the immersion type cleaning tank.
0, it became smaller by the amount of spin dryer 160.

【0010】[0010]

【発明の効果】本発明の装置では、ウエハを空気中に引
き上げないので、搬送中のウエハの乾燥、ウォーターマ
ークの発生、自然酸化膜の発生がない。また処理室内を
2 置換することが容易で自然酸化膜の発生を防ぐこと
ができる。
In the apparatus of the present invention, since the wafer is not pulled up into the air, there is no drying of the wafer during transportation, formation of water marks, and formation of natural oxide film. Further, it is easy to replace the inside of the processing chamber with N 2 , and the generation of a natural oxide film can be prevented.

【図面の簡単な説明】[Brief description of drawings]

【図1】実施例の洗浄装置の側面図である。FIG. 1 is a side view of a cleaning device according to an embodiment.

【図2】従来装置の(a)側面図、(b)は(a)のB
−B矢視図である。
FIG. 2A is a side view of a conventional device, and FIG. 2B is a B of FIG.
FIG.

【図3】従来装置の側面図である。FIG. 3 is a side view of a conventional device.

【符号の説明】[Explanation of symbols]

1 洗浄装置 2、3、4、5、6 処理室 10 回転板 11 ウエハ 12 ウエハ保持枠 13 回転装置 21、31、41、51 スプレーノズル 22、32、42 仕切壁 23、33、43、53 排液口 1 Cleaning Device 2, 3, 4, 5, 6 Processing Chamber 10 Rotating Plate 11 Wafer 12 Wafer Holding Frame 13 Rotating Device 21, 31, 41, 51 Spray Nozzle 22, 32, 42 Partition Wall 23, 33, 43, 53 Discharge Liquid mouth

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 半導体ウエハの薬液処理、純水洗浄を行
う複数のスプレーチャンバを連設し、この連設したスプ
レーチャンバを順次ウエハを移動させる移動装置を設
け、各チャンバの連設部には開閉自在な仕切りカーテン
を設けたことを特徴とする半導体ウエハの洗浄装置。
1. A plurality of spray chambers for performing chemical liquid treatment on semiconductor wafers and cleaning with pure water are provided in series, and a moving device for sequentially moving the wafers in the spray chambers provided is provided. An apparatus for cleaning a semiconductor wafer, which is provided with a partition curtain that can be freely opened and closed.
JP34420992A 1992-12-24 1992-12-24 Semiconductor wafer cleaning device Withdrawn JPH06196465A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34420992A JPH06196465A (en) 1992-12-24 1992-12-24 Semiconductor wafer cleaning device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34420992A JPH06196465A (en) 1992-12-24 1992-12-24 Semiconductor wafer cleaning device

Publications (1)

Publication Number Publication Date
JPH06196465A true JPH06196465A (en) 1994-07-15

Family

ID=18367478

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34420992A Withdrawn JPH06196465A (en) 1992-12-24 1992-12-24 Semiconductor wafer cleaning device

Country Status (1)

Country Link
JP (1) JPH06196465A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6145519A (en) * 1996-11-11 2000-11-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor workpiece cleaning method and apparatus
US6311702B1 (en) * 1998-11-11 2001-11-06 Applied Materials, Inc. Megasonic cleaner
US6516816B1 (en) * 1999-04-08 2003-02-11 Applied Materials, Inc. Spin-rinse-dryer
US6748961B2 (en) * 2001-03-30 2004-06-15 Lam Research Corporation Angular spin, rinse, and dry module and methods for making and implementing the same
KR100447369B1 (en) * 2001-03-29 2004-09-08 샤프 가부시키가이샤 Adherent film recovering device and method of recovering adherent film
KR100578126B1 (en) * 2003-05-20 2006-05-10 삼성전자주식회사 Wet Station
KR100872715B1 (en) * 2003-12-31 2008-12-05 동부일렉트로닉스 주식회사 Apparatus for preventing particle contamination in semiconductor process
CN102427020A (en) * 2011-07-01 2012-04-25 上海华力微电子有限公司 Wafer cleaning method capable of effectively reducing water mark defect

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6145519A (en) * 1996-11-11 2000-11-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor workpiece cleaning method and apparatus
US6227212B1 (en) 1996-11-11 2001-05-08 Mitsubishi Denki Kabushiki Kaisha Semiconductor workpiece cleaning method and apparatus
US6311702B1 (en) * 1998-11-11 2001-11-06 Applied Materials, Inc. Megasonic cleaner
US6516816B1 (en) * 1999-04-08 2003-02-11 Applied Materials, Inc. Spin-rinse-dryer
US7226514B2 (en) * 1999-04-08 2007-06-05 Applied Materials, Inc. Spin-rinse-dryer
KR100447369B1 (en) * 2001-03-29 2004-09-08 샤프 가부시키가이샤 Adherent film recovering device and method of recovering adherent film
US6748961B2 (en) * 2001-03-30 2004-06-15 Lam Research Corporation Angular spin, rinse, and dry module and methods for making and implementing the same
KR100578126B1 (en) * 2003-05-20 2006-05-10 삼성전자주식회사 Wet Station
KR100872715B1 (en) * 2003-12-31 2008-12-05 동부일렉트로닉스 주식회사 Apparatus for preventing particle contamination in semiconductor process
CN102427020A (en) * 2011-07-01 2012-04-25 上海华力微电子有限公司 Wafer cleaning method capable of effectively reducing water mark defect

Similar Documents

Publication Publication Date Title
JP3171807B2 (en) Cleaning device and cleaning method
JP3381776B2 (en) Processing device and processing method
KR100271772B1 (en) Semiconductor Wet Etching Equipment
JP2000208413A (en) Developing device and developing treatment method
JP2000012443A (en) Multi-stage spin-type treatment system for substrate
JPH10189527A (en) Method and apparatus for manufacturing method of semiconductor device
KR19980025068A (en) Cleaning device and cleaning method
JPH06196465A (en) Semiconductor wafer cleaning device
JP3180209B2 (en) Developing device and developing method
JP3193327B2 (en) Cleaning equipment
JPH06163505A (en) Semiconductor substrate cleaning apparatus
JP2002016038A (en) Apparatus for semiconductor wafer cleaning and method for wafer cleaning using the same
JPH10247635A (en) Device and method for performing washing treatment for wafer
JPH088222A (en) Spin processor
JPH11315383A (en) Plating device for substrate
JP3171821B2 (en) Cleaning device and cleaning method
JPH04357836A (en) Cleaning device for semiconductor wafer
KR102035626B1 (en) Guide device of drier for semiconductor wafer
KR101052821B1 (en) Substrate processing apparatus and method
KR20100128122A (en) Method for cleaning substrate
JPH11354488A (en) Method and equipment for processing substrate
US6425191B1 (en) Apparatus and method for reducing solvent residue in a solvent-type dryer for semiconductor wafers
TWI837116B (en) Method and apparatus for cleaning semiconductor wafer
JPH02114528A (en) Wet processing device
KR102385267B1 (en) Apparatus for treating substrate

Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20000307