JPH04357836A - Cleaning device for semiconductor wafer - Google Patents
Cleaning device for semiconductor waferInfo
- Publication number
- JPH04357836A JPH04357836A JP13263291A JP13263291A JPH04357836A JP H04357836 A JPH04357836 A JP H04357836A JP 13263291 A JP13263291 A JP 13263291A JP 13263291 A JP13263291 A JP 13263291A JP H04357836 A JPH04357836 A JP H04357836A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- semiconductor wafer
- chemicals
- stopper
- chemical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 238000004140 cleaning Methods 0.000 title claims abstract description 35
- 239000000126 substance Substances 0.000 claims abstract description 64
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 235000012431 wafers Nutrition 0.000 claims description 73
- 239000007788 liquid Substances 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000005406 washing Methods 0.000 abstract description 6
- 239000000243 solution Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000011086 high cleaning Methods 0.000 description 3
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、半導体チップ製造の洗
浄工程における、半導体ウエハー洗浄装置に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer cleaning apparatus used in the cleaning process of semiconductor chip manufacturing.
【0002】0002
【従来の技術】近年、半導体ウエハー洗浄装置は、パー
ティクル除去能力が高く、金属不純物吸着が少なく、ウ
エハー面内で均一な洗浄がなされるように開発されつつ
ある。2. Description of the Related Art In recent years, semiconductor wafer cleaning equipment has been developed to have high particle removal ability, less adsorption of metal impurities, and uniform cleaning within the wafer surface.
【0003】以下、図面を参照しながら、上記した従来
の半導体ウエハー洗浄装置の一例について説明する。図
3は、従来の半導体ウエハー洗浄装置の概略正面図を示
すものである。図3において、1は水洗ノズルで、半導
体ウエハー2を純水でリンスするときに用いる。3は薬
液ノズルで、半導体ウエハー2を薬液を用いて洗浄する
ときに用いる。4はウエハーチャックでウエハー2を固
定させる。An example of the above-mentioned conventional semiconductor wafer cleaning apparatus will be described below with reference to the drawings. FIG. 3 shows a schematic front view of a conventional semiconductor wafer cleaning apparatus. In FIG. 3, reference numeral 1 denotes a water washing nozzle, which is used when rinsing the semiconductor wafer 2 with pure water. A chemical liquid nozzle 3 is used when cleaning the semiconductor wafer 2 with a chemical liquid. 4 fixes the wafer 2 with a wafer chuck.
【0004】以上のように構成された従来の半導体ウエ
ハー洗浄装置について、以下その動作について説明する
。The operation of the conventional semiconductor wafer cleaning apparatus constructed as described above will be explained below.
【0005】まず、半導体ウエハー2はウエハー搬送装
置によってウエハーチャック4によって固定される。そ
の後、ウエハーチャック4を回転させた状態で、薬液ノ
ズル3から薬液を噴出させる。その後、薬液の噴出を止
め、代わりに水洗ノズル1から純水を噴出させ半導体ウ
エハー2を水洗する。その後、水洗を終了し、半導体ウ
エハー2を回転状態で乾燥する。最後に、ウエハー搬送
装置によってウエハーチャック4から半導体ウエハー2
を移動させて洗浄を終了する(例えば、特開昭号63−
14434号公報)。First, the semiconductor wafer 2 is fixed by a wafer chuck 4 by a wafer transfer device. Thereafter, while the wafer chuck 4 is being rotated, the chemical liquid is ejected from the chemical liquid nozzle 3. Thereafter, the jetting of the chemical solution is stopped, and instead, pure water is spouted from the water washing nozzle 1 to wash the semiconductor wafer 2. Thereafter, the water washing is finished, and the semiconductor wafer 2 is dried in a rotating state. Finally, the semiconductor wafer 2 is transferred from the wafer chuck 4 by the wafer transfer device.
to finish cleaning (for example, JP-A No. 63-
14434).
【0006】[0006]
【発明が解決しようとする課題】しかしながら、上記の
ような構成では、薬液ノズル3から噴出させた薬液は、
半導体ウエハー2表面から流れさるために、薬液使用量
は非常に多いという問題点を有していた。更に、例えば
、フォトレジスト除去洗浄に用いる硫酸と過酸化水素水
の混合液を用いた洗浄の場合、使用温度は130℃以上
であるため、使用量が増加すると、薬液を昇温するのが
困難になるなどの問題点も有していた。使用した薬液を
循環装置を用いて再利用する方法も取られているが、薬
液の純度が低下するため、ウエハー洗浄としては、あま
り適してはいなかった。[Problems to be Solved by the Invention] However, in the above configuration, the chemical liquid jetted from the chemical liquid nozzle 3 is
Since the chemical solution flows from the surface of the semiconductor wafer 2, the amount of the chemical solution used is extremely large. Furthermore, for example, in the case of cleaning using a mixed solution of sulfuric acid and hydrogen peroxide used for photoresist removal cleaning, the operating temperature is 130°C or higher, so as the amount used increases, it becomes difficult to raise the temperature of the chemical solution. It also had problems such as: Although a method of reusing the used chemical solution using a circulation device has been adopted, this method is not very suitable for cleaning wafers because the purity of the chemical solution decreases.
【0007】本発明は、上記問題点に鑑み、枚葉処理洗
浄装置において薬液使用量を低減させ、更に、ウエハー
洗浄能力を高めた半導体ウエハー洗浄装置を提供するこ
とを目的とする。SUMMARY OF THE INVENTION In view of the above-mentioned problems, it is an object of the present invention to provide a semiconductor wafer cleaning apparatus that reduces the amount of chemicals used in a single wafer processing cleaning apparatus and further improves wafer cleaning performance.
【0008】[0008]
【課題を解決するための手段】上記目的を達成するため
に本発明の半導体ウエハー洗浄装置は、マイクロ波発生
器または昇温ランプと、半導体ウエハー上に薬液を溜め
る薬液ストッパー機構とを備えたものである。[Means for Solving the Problems] In order to achieve the above object, a semiconductor wafer cleaning apparatus of the present invention is provided with a microwave generator or a heating lamp, and a chemical liquid stopper mechanism for storing a chemical liquid on a semiconductor wafer. It is.
【0009】[0009]
【作用】本発明は、上記した構成によって、半導体ウエ
ハー上に一定量の薬液が溜まり、その薬液がマイクロ波
発生器または昇温ランプで昇温され、半導体ウエハー面
内で均一に洗浄能力が高くなり、薬液使用量も削減され
る。[Operation] With the above-described configuration, the present invention allows a certain amount of chemical liquid to accumulate on the semiconductor wafer, and the temperature of the chemical liquid is raised by a microwave generator or a heating lamp, thereby achieving high cleaning ability uniformly within the surface of the semiconductor wafer. Therefore, the amount of chemical solution used is also reduced.
【0010】0010
【実施例】以下本発明の一実施例の半導体ウエハー洗浄
装置について、図面を参照しながら説明する。図1は、
本発明の一実施例における半導体ウエハー洗浄装置の概
略断面図を示すものである。図1において、1〜4は図
3の従来例と同じであるので説明を省略する。11はマ
イクロ波を発生させるマグネットロン、12はマイクロ
波をウエハー2に均一に照射するためのフード、13は
一定量の薬液をウエハー2上に溜めるための薬液ストッ
パーで、ウエハー径の大きさでリング状の形状をしてい
る。14は薬液ストッパー昇降機で、洗浄後、薬液スト
ッパー13を半導体ウエハー2と密着させたり上昇させ
、薬液を廃液する機能をもっている。15は半導体ウエ
ハー2上に溜めている薬液である。DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor wafer cleaning apparatus according to an embodiment of the present invention will be described below with reference to the drawings. Figure 1 shows
1 is a schematic cross-sectional view of a semiconductor wafer cleaning apparatus according to an embodiment of the present invention. In FIG. 1, 1 to 4 are the same as those in the conventional example shown in FIG. 3, so their explanation will be omitted. 11 is a magnetron that generates microwaves, 12 is a hood for uniformly irradiating microwaves onto the wafer 2, and 13 is a chemical stopper for storing a certain amount of chemical solution on the wafer 2, depending on the size of the wafer diameter. It has a ring shape. Reference numeral 14 denotes a chemical stopper elevator, which has the function of bringing the chemical stopper 13 into close contact with the semiconductor wafer 2 and raising it after cleaning, and discharging the chemical liquid. Reference numeral 15 indicates a chemical solution stored on the semiconductor wafer 2.
【0011】以上のように構成させた半導体ウエハー洗
浄装置について、その動作を説明する。The operation of the semiconductor wafer cleaning apparatus constructed as described above will be explained.
【0012】最初に、ウエハー搬送機から、図1の洗浄
装置に半導体ウエハー2が搬送される。次に、半導体ウ
エハー2の裏面がウエハーチャック4によってチャック
される。その後、薬液ストッパー13が薬液ストッパー
昇降機14によって半導体ウエハー2に密着させる。次
に、薬液ノズル3から薬液(例えば、硫酸と過酸化水素
水の混合液)が半導体ウエハー2上に噴出される。薬液
は半導体ウエハー2上に薬液ストッパー13の高さまで
溜まることになる。半導体ウエハー2上に溜まった薬液
の温度を上昇させるため、マグネトロン11から例えば
2.45GHzのマイクロ波を発生させ、半導体ウエハ
ー2上に溜まった薬液に照射する。電子レンジのように
、マイクロ波照射を行うことによって、薬液温度が上昇
し、半導体ウエハー2表面が洗浄させる。薬液によるウ
エハー洗浄が完了した後、薬液ストッパー13が薬液ス
トッパー昇降機14によって上昇し、薬液は廃液される
。次に、薬液ストッパー13が半導体ウエハー2から離
れた状態で、ウエハーチャック4が回転子、水洗ノズル
1から純水が噴出する。半導体ウエハー2の回転および
純水の噴出により半導体ウエハー2は、純水リンスされ
ることになる。最後に、純水噴出を停止し、半導体ウエ
ハー2を高速回転にすることによって、半導体ウエハー
2を乾燥し終了する。First, the semiconductor wafer 2 is transferred from the wafer transfer machine to the cleaning apparatus shown in FIG. Next, the back side of the semiconductor wafer 2 is chucked by the wafer chuck 4. Thereafter, the chemical stopper 13 is brought into close contact with the semiconductor wafer 2 by the chemical stopper elevator 14. Next, a chemical solution (for example, a mixture of sulfuric acid and hydrogen peroxide) is sprayed onto the semiconductor wafer 2 from the chemical solution nozzle 3 . The chemical liquid will accumulate on the semiconductor wafer 2 up to the height of the chemical liquid stopper 13. In order to raise the temperature of the chemical liquid accumulated on the semiconductor wafer 2, microwaves of, for example, 2.45 GHz are generated from the magnetron 11 and irradiated to the chemical liquid accumulated on the semiconductor wafer 2. By performing microwave irradiation, as in a microwave oven, the temperature of the chemical solution increases and the surface of the semiconductor wafer 2 is cleaned. After the wafer cleaning with the chemical is completed, the chemical stopper 13 is raised by the chemical stopper elevator 14, and the chemical is disposed of. Next, with the chemical liquid stopper 13 separated from the semiconductor wafer 2, pure water is ejected from the wafer chuck 4 rotor and the water washing nozzle 1. The rotation of the semiconductor wafer 2 and the jetting of pure water cause the semiconductor wafer 2 to be rinsed with pure water. Finally, the jetting of pure water is stopped and the semiconductor wafer 2 is rotated at high speed to dry the semiconductor wafer 2 and the process is completed.
【0013】以上のように本実施例によれば、マイクロ
波発生器であるマグネトロン11と、半導体ウエハー2
上に薬液を溜める機構を設けることにより、半導体ウエ
ハー2面内均一で、高温で洗浄能力が高く、薬液使用量
を削減することができる。As described above, according to this embodiment, the magnetron 11, which is a microwave generator, and the semiconductor wafer 2
By providing a mechanism for storing the chemical liquid on the top, it is possible to uniformly clean two semiconductor wafers, to have high cleaning ability at high temperatures, and to reduce the amount of chemical liquid used.
【0014】次に本発明の第2の実施例について、図面
を参照しながら説明する。図2は、本発明の第2の実施
例を示す半導体ウエハー洗浄装置の概略断面図である。
図2において、第1の実施例(図1)と異なる点は、半
導体ウエハー2上に溜めた薬液の昇温方法である。Next, a second embodiment of the present invention will be described with reference to the drawings. FIG. 2 is a schematic cross-sectional view of a semiconductor wafer cleaning apparatus showing a second embodiment of the present invention. 2, the difference from the first embodiment (FIG. 1) is the method of raising the temperature of the chemical solution stored on the semiconductor wafer 2. In FIG.
【0015】第1の実施例では、図1においてマグネト
ロン11から発生したマイクロ波によって昇温していた
が、第2の実施例では、昇温ランプ16によって昇温す
る。In the first embodiment, the temperature is raised by microwaves generated from the magnetron 11 in FIG. 1, but in the second embodiment, the temperature is raised by the temperature rising lamp 16.
【0016】以上のように本実施例によれば、昇温ラン
プ16と、半導体ウエハー2上に薬液を溜める機構を設
けることにより、半導体ウエハー2面内均一で、高温で
洗浄能力が高く、薬液使用量を削減することができる。
更に、マイクロ波等による負傷の影響もなく清浄な洗浄
を行うことができる。As described above, according to this embodiment, by providing the temperature raising lamp 16 and a mechanism for storing the chemical solution on the semiconductor wafer 2, the chemical solution can be uniformly distributed over the surface of the semiconductor wafer 2 and has a high cleaning ability at high temperatures. Usage amount can be reduced. Furthermore, clean cleaning can be performed without the injury caused by microwaves or the like.
【0017】[0017]
【発明の効果】以上のように本発明は、マイクロ波発生
器または昇温ランプと、半導体ウエハー上に薬液を溜め
る薬液ストッパー機構を設けることにより、半導体ウエ
ハー面内均一で、高温で洗浄能力が高く、薬液使用量を
削減できる半導体ウエハー洗浄装置を提供できる。Effects of the Invention As described above, the present invention provides a microwave generator or a heating lamp and a chemical liquid stopper mechanism for storing a chemical liquid on the semiconductor wafer. It is possible to provide a semiconductor wafer cleaning apparatus that is expensive and can reduce the amount of chemical liquid used.
【図1】本発明の第1の実施例における半導体ウエハー
洗浄装置の概略断面図FIG. 1 is a schematic cross-sectional view of a semiconductor wafer cleaning apparatus in a first embodiment of the present invention.
【図2】本発明の第2の実施例における半導体ウエハー
洗浄装置の概略断面図FIG. 2 is a schematic cross-sectional view of a semiconductor wafer cleaning apparatus according to a second embodiment of the present invention.
【図3】従来の半導体ウエハー洗浄装置の概略正面図[Figure 3] Schematic front view of conventional semiconductor wafer cleaning equipment
1 水洗ノズル
2 半導体ウエハー
3 薬液ノズル
4 ウエハーチャック
11 マグネトロン(マイクロ波発生器)12 フ
ード
13 薬液ストッパー
14 薬液ストッパー昇降機
15 薬液1 Water washing nozzle 2 Semiconductor wafer 3 Chemical nozzle 4 Wafer chuck 11 Magnetron (microwave generator) 12 Hood 13 Chemical stopper 14 Chemical stopper elevator 15 Chemical
Claims (3)
ストッパー機構と、その薬液ストッパー機構内に溜まっ
た薬液の温度を上昇させるためのマイクロ波発生器とを
少なくとも備えたことを特徴とする半導体ウエハー洗浄
装置。1. A semiconductor wafer cleaning device comprising at least a chemical liquid stopper mechanism for storing a chemical liquid on a semiconductor wafer, and a microwave generator for raising the temperature of the chemical liquid accumulated in the chemical liquid stopper mechanism. Device.
プを用いたことを特徴とする請求項1記載の半導体ウエ
ハー洗浄装置。2. The semiconductor wafer cleaning apparatus according to claim 1, wherein a heating lamp is used in place of the microwave generator.
と、前記半導体ウエハーをチャックする機構と、薬液を
噴出するノズルと、純水を噴出するノズルとを設けたこ
とを特徴とする請求項1または2記載の半導体ウエハー
洗浄装置。3. The semiconductor device according to claim 1, further comprising a mechanism for transporting semiconductor wafers in single wafers, a mechanism for chucking the semiconductor wafers, a nozzle for spouting a chemical solution, and a nozzle for spouting pure water. Or the semiconductor wafer cleaning apparatus according to 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13263291A JPH04357836A (en) | 1991-06-04 | 1991-06-04 | Cleaning device for semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13263291A JPH04357836A (en) | 1991-06-04 | 1991-06-04 | Cleaning device for semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04357836A true JPH04357836A (en) | 1992-12-10 |
Family
ID=15085870
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13263291A Pending JPH04357836A (en) | 1991-06-04 | 1991-06-04 | Cleaning device for semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04357836A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6041799A (en) * | 1996-11-08 | 2000-03-28 | Nec Corporation | Microwave-excitation cleaning and rinsing apparatus |
US6116254A (en) * | 1995-03-30 | 2000-09-12 | Nec Corporation | Cleaning method and system of semiconductor substrate and production method of cleaning solution |
KR20010027577A (en) * | 1999-09-14 | 2001-04-06 | 김영환 | Di water heating apparatus for semiconductor developer |
US6261853B1 (en) | 2000-02-07 | 2001-07-17 | Therma-Wave, Inc. | Method and apparatus for preparing semiconductor wafers for measurement |
KR20030021581A (en) * | 2001-09-06 | 2003-03-15 | 씨엘디 주식회사 | Cleaning apparatus and cleaning method using the same |
US6714300B1 (en) | 1998-09-28 | 2004-03-30 | Therma-Wave, Inc. | Optical inspection equipment for semiconductor wafers with precleaning |
US6861619B1 (en) | 2000-02-07 | 2005-03-01 | Therma-Wave, Inc. | Method and apparatus for preparing semiconductor wafers for measurement |
WO2013061831A1 (en) * | 2011-10-24 | 2013-05-02 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
-
1991
- 1991-06-04 JP JP13263291A patent/JPH04357836A/en active Pending
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6116254A (en) * | 1995-03-30 | 2000-09-12 | Nec Corporation | Cleaning method and system of semiconductor substrate and production method of cleaning solution |
US6041799A (en) * | 1996-11-08 | 2000-03-28 | Nec Corporation | Microwave-excitation cleaning and rinsing apparatus |
KR100330676B1 (en) * | 1996-11-08 | 2002-06-20 | 가네꼬 히사시 | Microwave-excitation cleaning and rinsing apparatus |
US6714300B1 (en) | 1998-09-28 | 2004-03-30 | Therma-Wave, Inc. | Optical inspection equipment for semiconductor wafers with precleaning |
US7068370B2 (en) | 1998-09-28 | 2006-06-27 | Therma-Wave, Inc. | Optical inspection equipment for semiconductor wafers with precleaning |
KR20010027577A (en) * | 1999-09-14 | 2001-04-06 | 김영환 | Di water heating apparatus for semiconductor developer |
US6261853B1 (en) | 2000-02-07 | 2001-07-17 | Therma-Wave, Inc. | Method and apparatus for preparing semiconductor wafers for measurement |
US6624393B2 (en) | 2000-02-07 | 2003-09-23 | Therma-Wave, Inc. | Method and apparatus for preparing semiconductor wafers for measurement |
US6861619B1 (en) | 2000-02-07 | 2005-03-01 | Therma-Wave, Inc. | Method and apparatus for preparing semiconductor wafers for measurement |
KR20030021581A (en) * | 2001-09-06 | 2003-03-15 | 씨엘디 주식회사 | Cleaning apparatus and cleaning method using the same |
WO2013061831A1 (en) * | 2011-10-24 | 2013-05-02 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
JP2013093380A (en) * | 2011-10-24 | 2013-05-16 | Tokyo Electron Ltd | Substrate processing apparatus and substrate processing method |
KR20140079338A (en) * | 2011-10-24 | 2014-06-26 | 도쿄엘렉트론가부시키가이샤 | Substrate processing apparatus and substrate processing method |
US9266153B2 (en) | 2011-10-24 | 2016-02-23 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
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