KR20090016231A - Apparatus and method for treating substrate - Google Patents

Abstract

An apparatus and method for treating a substrate is provided to reduce a processing time by performing ashing and cleaning process in one apparatus. In an apparatus and method for treating substrate, a supporting member(120) is the inner structure of housing and support the substrate. A cleaning nozzle(142) supplies washing solution to the substrate on the supporting member. An electrode member(160) activates a process gas supplied from the processing gas supply device. The processing gas supply device(130) comprises a process gas supply line(134) and a supply port(132). The supply port receives the process gas from the process gas supply line and supplies the process gas to inside of the housing.

Description

Substrate processing apparatus and method {APPARATUS AND METHOD FOR TREATING SUBSTRATE}

The present invention relates to an apparatus and method for processing a substrate, and more particularly, to an apparatus and method for processing a semiconductor substrate using plasma.

A general semiconductor manufacturing process is a process of producing a semiconductor integrated circuit chip by sequentially or selectively performing a plurality of processing processes on a wafer. The ashing process of the semiconductor manufacturing process is a process of removing photoresist remaining on the wafer surface. A typical ashing apparatus loads a wafer onto a chuck that is heated to a high temperature and then removes the plasma by reacting it with the photoresist on the wafer surface. After the ashing process is performed, the wafer cleaning process is performed. The cleaning process is carried out in a separate cleaning device. The cleaning apparatus receives the wafer on which the ashing process is completed, sprays the cleaning liquid onto the wafer surface, and removes foreign substances remaining on the wafer surface.

An object of the present invention is to provide a substrate processing apparatus and method for improving the efficiency of a substrate processing process. In particular, it is an object of the present invention to provide a substrate processing apparatus and method for improving the semiconductor ashing process and the cleaning process efficiency.

The substrate processing apparatus according to the present invention for achieving the above object is a housing that provides a space for performing a process for processing the substrate therein, a support member for supporting the substrate in the housing during the process, the support member during the process It includes a cleaning nozzle for supplying the cleaning liquid to the substrate placed, and the electrode member for activating the process gas supplied by the process gas supply member in the process of receiving power.

According to an embodiment of the invention, the substrate processing apparatus further comprises a process gas supply member for supplying a process gas to the housing during the process, the process gas supply member is a process gas supply line, the open upper portion of the housing A cover and a supply port for receiving a process gas from the process gas supply line and supplying the process gas into the housing.

According to an embodiment of the present invention, the electrode member includes a plurality of electrode bars arranged in parallel in a long rod shape in the lower portion of the supply port.

According to an embodiment of the present invention, the substrate processing apparatus further includes a drying nozzle for supplying a dry gas to the substrate placed on the support member during the process.

According to an embodiment of the invention, the substrate processing apparatus further comprises a discharge member for discharging the fluid in the housing to the outside during the process, the discharge member is provided on the lower wall of the housing, the cleaning liquid in the housing is discharged And an exhaust port through which the gas in the housing is exhausted.

According to an embodiment of the invention, the support member is a spin head having an upper surface for supporting the substrate during the process, a rotation axis coupled to the lower center of the spin head so that the spin head is rotatable in the housing during the process, and And a driver for rotating the rotary shaft, wherein the exhaust port is provided to enclose the circumference of the rotary shaft, and is configured such that the height of the upper end is higher than the height of the lower wall of the housing.

According to one embodiment of the invention, the cleaning nozzle is installed in the housing, and supplies the cleaning liquid to the substrate placed on the support member during the process.

According to another embodiment of the present invention, the cleaning nozzle is installed in the supply port to supply the cleaning liquid to the supply port.

According to another embodiment of the present invention, the drying nozzle is installed in the supply port, and supplies a dry gas to the supply port during the process.

Substrate processing method according to the present invention for achieving the above object is a housing that provides a space for performing a process for processing the substrate therein, a support member for supporting the substrate in the housing during the process, into the housing during the process In the substrate processing method of the substrate processing apparatus comprising a process gas supply member for supplying a process gas and an electrode member for activating the process gas supplied to the inside of the housing by receiving power during the process, the substrate processing method is the support Loading the substrate into the member, generating a plasma to remove the photoresist from the surface of the substrate, supplying the cleaning liquid to the substrate to clean the substrate, and unloading the substrate from the support member.

According to an embodiment of the present invention, the substrate processing method further includes the step of wetting the wafer by spraying the cleaning liquid onto the wafer surface before removing the photosensitive liquid.

According to an embodiment of the present invention, the substrate processing method includes drying a wafer by spraying a dry gas onto a wafer surface between cleaning the substrate and unloading the substrate.

The substrate processing apparatus and method according to the present invention sequentially or selectively process a dry treatment process and a wet treatment process in one apparatus. For example, the substrate processing apparatus and method according to the present invention can process the semiconductor ashing process and the cleaning process in one apparatus.

The substrate processing apparatus and method according to the present invention shorten the substrate processing process time by performing the ashing process and the cleaning process in one apparatus.

The substrate processing apparatus and method according to the present invention reduces the footprint and reduces the manufacturing cost of the apparatus.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the invention is not limited to the embodiments presented herein but may be embodied in other forms. Rather, the embodiments set forth herein are provided to sufficiently convey the technical spirit of the present invention to those skilled in the art.

In the present embodiment, the apparatus for processing a wafer using plasma is described as an example of the apparatus for processing a semiconductor substrate, but the present invention can be applied to any apparatus for processing a substrate.

(Example)

1 is a view showing a substrate processing apparatus according to the present invention. Referring to FIG. 1, an apparatus for treating substrate 10 according to the present invention includes a housing 110, a support member 120, and a process gas supply member. 130, a cleaning fluid supply member 140, a dry fluid supply member 150, an electrode member 160, and a discharge member And 170.

The housing 110 provides a space in which a process of processing a semiconductor substrate (hereinafter, referred to as “wafer”) W is performed. The process includes a wafer wetting process, an ashing process, a cleaning process, and a dry process. The space in the housing 110 is provided in a generally cylindrical shape. The housing 110 includes a cylindrical lower housing 112 having an open top and an upper housing covering an open upper part of the lower housing 112. In this embodiment, a case where the upper housing is provided as a supply port 132 which will be described later will be described as an example. One side of the housing 110 is provided with a wafer entrance 112a for the wafer W to enter and exit during the process.

The support member 120 supports and rotates the wafer W in the housing 110 during the process. As the support member 120, a spin chuck is used. That is, the support member 120 includes a spin head 122, a rotating shaft 124, and a driving part 126. Spinhead 122 has a generally disc shape. The spin head 122 has an upper surface on which the wafer W is seated during the process. One end of the rotation shaft 124 is coupled to the lower center of the spin head 122, and the other end is coupled to the driver 126. The driver 126 rotates the rotating shaft 124 during the process. In addition, the driver 126 may up-down the rotating shaft 124 during the process.

The process gas supply member 130 supplies a process gas into the housing 110 during the process. The process gas includes a reaction gas used to remove the photosensitive liquid on the surface of the wafer (W). Oxygen gas (O 2 gas) may be used as the reaction gas. In addition, the process gas includes an inert gas for performing a purge (purge) in the housing 110.

The process gas supply member 130 includes a supply port 132 and a process gas supply line 134. The supply port 132 receives the process gas from the process gas supply line 134 during the process and supplies the process gas into the housing 110. In particular, the supply port 132 distributes the process gas so that the process gas processed during the process is uniformly supplied to the entire surface of the wafer (W). The supply port 132 is installed to close the open upper portion of the lower housing 112 of the housing 110. The supply port 132 is generally provided in a cylindrical shape and has a space for receiving a process gas supplied from the gas supply line 134 therein.

The cleaning fluid supply member 140 supplies the cleaning fluid to the wafer W placed on the support member 130 during the process. The cleaning fluid supply member 140 includes a cleaning nozzle 142 and a cleaning fluid supply line 144. At least one cleaning nozzle 142 is installed on an upper sidewall of the housing 110. The cleaning fluid supply line 144 supplies the cleaning fluid from the cleaning fluid supply source (not shown) to the cleaning nozzle 142. Ultrapure water may be used as the cleaning liquid or various kinds of chemicals may be used.

The dry fluid supply member 150 supplies the dry fluid to the wafer W placed on the support member 130 during the process. The dry fluid supply member 150 includes a dry nozzle 152 and a dry fluid supply line 154. At least one drying nozzle 152 is installed on an upper sidewall of the housing 110. The dry gas supply line 154 supplies a dry fluid to a dry nozzle 152 from a dry fluid supply source (not shown). Nitrogen gas (N₂gas) or isopropyl alcohol (IPA: Isopropyl alcohol) may be used as the dry fluid.

The electrode member 160 activates the process gas supplied into the housing 110 during the process. The electrode member 160 includes a plurality of electrode bars. The electrode bar includes an electrode 162 and an insulator 164. The electrode 162 has a long rod shape. The plurality of electrodes 162 are arranged in parallel at the same height. At this time, the respective electrodes 162 are spaced apart from each other by a predetermined interval. Therefore, the process gas supplied to the supply port 132 during the process is supplied into the housing 110 through a gap between the electrodes 162. In the process, each electrode 162 receives electric power to activate a process gas passing through the gaps of the electrodes 162. The insulator 164 insulates the electrode 162. An insulator 164 is provided to surround the exterior of each electrode 162.

The discharge member 170 discharges the fluid in the housing 110 from the housing 110 during the process. The discharge member 170 has a discharge port 172 and an exhaust port 174. The discharge port 172 is provided to discharge the treatment liquid in the housing 110 during the process. The discharge port 172 is installed on the lower wall of the housing 110. The cleaning liquid flowing into the discharge port 172 is drained through the discharge line 172a. The exhaust port 174 is provided to exhaust gas in the housing 110. The exhaust port 174 has a cylindrical shape surrounding the circumference of the rotation shaft 124 of the support member 120. The upper portion 174 'of the exhaust port 174 is opened, and the open upper portion 174' is used as a passage for exhausting gas in the housing 110. In this case, the height of the upper portion 174 ′ of the exhaust port 174 is preferably provided higher than the height of the lower wall of the housing 110. This is to prevent the cleaning liquid accumulated on the lower wall of the housing 110 from overflowing to the exhaust port 174 during the process. Gas introduced into the exhaust port 174 is exhausted through the exhaust line 174a.

In the present exemplary embodiment, the cleaning nozzles 142 and the drying nozzles 152 are disposed one by one on the upper end of the side wall of the housing 110, but the cleaning liquid supply nozzles 142 and the dry gas supply nozzles 152 are described. The number, location, and arrangement can be variously applied.

In addition, in the present embodiment, the electrode member 160 has a case in which a plurality of electrode bars are described as an example, but the electrode member 160 includes a plate-shaped electrode, and thus, may be disposed in the housing 110 during the process. The reaction gas can be activated. For example, the electrode of the electrode member may be provided in a plate shape in which a plurality of injection holes are formed.

Hereinafter, a process of the substrate processing apparatus 10 according to the present invention will be described in detail with reference to the accompanying drawings. 2 is a flowchart showing a process of a substrate processing apparatus according to the present invention. 3A to 3D are diagrams for describing a process of the substrate processing apparatus according to the present invention.

When the substrate treating process is started, the wafer W is loaded on the support member 120 (S110). In other words, the robot arm (not shown) carries the wafer W into the housing 110 through the wafer entrance 112 and then mounts the wafer on the upper surface of the spin head 122. When the wafer W is seated on the spin head 122, the support member 120 chucks the wafer W to fix it.

When the wafer W is loaded, a wetting process of the wafer W is performed (S120). Wafer wetting is performed by supplying a predetermined treatment liquid to the surface of the wafer W to change properties of the photoresist on the surface of the wafer. It is a process to improve reactivity. In this embodiment, the case where a cleaning liquid is used as the treatment liquid will be described as an example. That is, referring to FIG. 3A, the driver 126 rotates the rotation shaft 124 to rotate the wafer W placed on the spin head 122 at a predetermined rotation speed. When the wafer W is rotated, the cleaning nozzle 142 sprays the cleaning liquid onto the wafer W surface. The sprayed cleaning liquid wets the wafer W surface.

When the wetting process of the wafer W is completed, an ashing process of removing the photoresist remaining on the surface of the wafer W is performed (S130). That is, referring to FIG. 3B, the process gas supply line 134 supplies the reaction gas to the supply port 132. The reaction gas supplied to the supply port 132 is supplied to the wafer W processing surface which is rotated after passing through the gap between the electrode bars of the electrode member 160. At this time, since each of the electrodes 162 is applied with power, the reaction gas passing between the electrode bars is activated by the power applied to the electrodes 162 and then supplied into the housing 120. Plasma P is generated inside the housing 110 by the activated process gas. The generated plasma P ashes the photosensitive liquid on the wafer W surface. In this case, the gas supplied into the housing 120 is discharged to the outside of the housing 110 through the exhaust port 174. The gas discharged to the exhaust port 174 is exhausted along the exhaust line 174a.

When the ashing process is completed, a process for cleaning the wafer W is performed (S140). That is, referring to FIG. 3C, the process gas supply from the process gas supply member 130 is stopped, and the cleaning nozzle 142 is supplied to the processing surface of the wafer W rotated by receiving the cleaning liquid from the cleaning liquid supply line 144. Spray the cleaning liquid. The sprayed cleaning liquid is discharged to the outside of the housing 110 through the discharge port 172 after removing the foreign matter remaining on the surface of the wafer (W). The cleaning liquid discharged to the discharge port 172 is drained along the discharge line 172a.

When the cleaning process is completed, a drying process of drying the wafer W is performed (S150). That is, referring to FIG. 3D, the cleaning liquid supply of the cleaning liquid supply member 140 is stopped, and the drying nozzle 152 receives the dry gas from the dry gas supply line 154 and is placed on the support member 120. ) Spray dry gas to the treated surface. The injected dry gas is discharged to the outside of the housing 110 through the exhaust port 174 after drying the wafer (W). The dry gas discharged is exhausted along the exhaust line 174a.

When the drying process is completed, unloading of the wafer W is performed (S160). That is, when the drying process is completed, the dry gas supply of the dry gas supply member 150 is stopped. In addition, the driver 126 of the support member 120 stops the rotation of the spin head 122, and the spin head 122 unchucks the wafer (W). In addition, the robot arm (not shown) carries the wafer W out of the housing 110 through the wafer entrance and exit 112, and then transfers the wafer W to a facility where a subsequent process is performed.

As described above, the substrate processing apparatus and method according to the present invention can perform the ashing process, the cleaning process, and the drying process in one apparatus, and thus, the ashing process and the cleaning process in the conventional separate apparatus, respectively. In comparison, the substrate processing time is shortened.

In addition, the substrate processing apparatus and method according to the present invention improve the substrate processing process efficiency by improving the reactivity with the plasma generated during the ashing process by wetting the wafer surface with the processing liquid before the ashing process in one apparatus.

In addition, the substrate processing apparatus and method according to the present invention can perform a dry processing process and a wet processing process in one apparatus, thereby reducing the manufacturing cost of the apparatus and reducing the footprint.

In the above-described embodiment, the wafer wetting process, the ashing process, the cleaning process, and the drying process are sequentially described as an example, but the substrate processing process of the substrate processing apparatus according to the present invention can be variously changed. For example, each process may optionally be repeated two or more times, or the order thereof may be changed. In addition, the substrate treating process of the present invention may be performed only by an ashing process, a cleaning process, and a drying process without a wetting process of the wafer.

In this embodiment, the wafer wetting process, the ashing process, the cleaning, and the drying process are performed by rotating the wafer W as an example, but the rotation of the wafer W in each process is selectively performed. At this time, the rotational speed of the wafer (W) may be variously changed.

In addition, in the present embodiment, the case in which the cleaning liquid is used as the processing liquid used for the wafer wetting has been described as an example, but the wafer wetting may be performed using a chemical liquid instead of the cleaning liquid. For example, as another embodiment of the present invention, the substrate processing apparatus may further include a chemical liquid supply means for supplying a chemical liquid for wafer wetting to perform a wafer wetting process by supplying the chemical liquid to the wafer surface during the wafer wetting process.

In the above-described embodiment of the present invention, the cleaning solution supply member 140 is fixedly installed in the housing 110, and thus, the cleaning solution is directly supplied to the wafer W placed on the support member 120 during the process. In addition, the cleaning solution supply member 140 may be provided to be supplied to the wafer W after passing through a gap between the electrode bars of the electrode member 160 during the process.

That is, referring to FIG. 4, in the substrate processing apparatus 10 ′ according to another embodiment of the present invention, the cleaning liquid is supplied to the inside of the housing 110 after the cleaning liquid passes through the electrode member 160 in the cleaning process. It has a member 140a. The cleaning liquid supply member 140a has a cleaning nozzle 142a and a supply line 144b. At least one cleaning nozzle 142a is installed at the supply port 132. The cleaning nozzle 142a sprays the cleaning liquid supplied from the supply line 144b into the supply port 132 during the process. The cleaning liquid supplied to the supply port 132 passes through the gap between the electrode bars of the electrode member 160, and then is supplied to the wafer W placed on the support member 120. At this time, the cleaning liquid passing through the electrode bars is activated by the electrodes to which power is applied. Therefore, the activated cleaning liquid more effectively removes foreign substances remaining on the wafer W surface.

The substrate processing apparatus 10 ′ according to another embodiment of the present invention described above cleans the wafer W using a cleaning liquid activated by the electrode member 160 during the cleaning process, thereby improving the cleaning efficiency of the wafer W. Improve.

In addition, as another embodiment of the present invention, the substrate processing apparatus may dry the wafer W by the dry gas activated during the drying process. That is, referring to FIG. 5, the substrate processing apparatus 10 ″ according to another embodiment of the present invention provides a drying gas to be supplied into the housing 120 after passing through the electrode member 160 in a drying process. It has a dry gas supply member 150a. The dry gas supply member 150a has a drying nozzle 152a and a dry gas supply line 154a. At least one drying nozzle 152a is installed at the supply port 132. The drying nozzle 152a sprays the dry gas supplied from the dry gas supply line 154b into the supply port 132 during the process. The dry gas supplied to the supply port 132 passes through a gap between the electrode bars of the electrode member 160, and then is supplied to the wafer W placed on the support member 120. At this time, the dry gas passing through the electrode bars is activated by the electrodes to which power is applied. Therefore, the activated dry gas can improve the drying efficiency of the wafer W surface.

In the substrate processing apparatus 10 ″ according to still another embodiment of the present invention, the wafer W is dried by using a dry gas activated by the electrode member 160 in the drying process, so that the wafer W is dried. Improve the drying efficiency.

The foregoing detailed description illustrates the present invention. In addition, the foregoing description shows and describes preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications may be made within the scope of the concept of the invention disclosed in this specification, the scope equivalent to the disclosed contents, and / or the skill or knowledge in the art. The above-described embodiments illustrate the best state for implementing the technical idea of the present invention, the use of other inventions such as the present invention in other state known in the art, and the specific fields of application and uses of the invention. Various changes required are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to include other embodiments.

1 is a view showing a substrate processing apparatus according to the present invention.

2 is a flowchart showing a process of a substrate processing apparatus according to the present invention.

3A to 3D are views for explaining a process of the substrate processing apparatus according to the present invention.

4 illustrates a substrate processing apparatus according to another embodiment of the present invention.

5 is a view illustrating a substrate processing apparatus according to another embodiment of the present invention.

Claims (12)

In the substrate processing apparatus, A housing providing a space therein for performing a process of processing a substrate; A support member supporting the substrate in the housing during the process; A cleaning nozzle for supplying a cleaning liquid to the substrate placed on the support member during the process; and And an electrode member that receives electric power during the process and activates the process gas supplied by the process gas supply member. The method of claim 1, The substrate processing apparatus, Further comprising a process gas supply member for supplying a process gas to the housing during the process, The process gas supply member, Process gas supply line, And a supply port covering an open upper portion of the housing and receiving a process gas from the process gas supply line and supplying the process gas into the housing. The method of claim 1, The electrode member, Substrate processing apparatus comprising a plurality of electrode bars arranged in parallel in a long rod shape in the lower portion of the supply port. The method of claim 1, The substrate processing apparatus, And a drying nozzle for supplying dry gas to the substrate placed on the support member during the process. The method according to any one of claims 1 to 4, The substrate processing apparatus, Further comprising a discharge member for discharging the fluid in the housing to the outside during the process, The discharge member, A discharge port provided on the lower wall of the housing and discharging the cleaning liquid in the housing; And an exhaust port through which the gas in the housing is exhausted. The method of claim 5, wherein The support member, A spin head having an upper surface supporting the substrate during the process; A rotation axis coupled to the lower center of the spin head such that the spin head is rotatable inside the housing during the process, and It includes a driver for rotating the rotary shaft, The exhaust port, It is provided to surround the rotation axis, the substrate processing apparatus, characterized in that the height of the top is shaped to be higher than the height of the lower wall of the housing. The method according to any one of claims 2 to 4, The cleaning nozzle, And a cleaning liquid supplied to the substrate provided in the housing and placed on the support member during the process. The method according to any one of claims 2 to 4, The cleaning nozzle, The substrate processing apparatus is installed in the supply port, and supplies a cleaning liquid to the supply port. The method of claim 4, wherein The dry nozzle, It is installed in the supply port, substrate processing apparatus characterized in that for supplying dry gas to the supply port during the process. A housing providing a space for processing the substrate therein, a support member supporting the substrate in the housing during the process, a process gas supply member supplying the process gas into the housing during the process, and power during the process In the substrate processing method of the substrate processing apparatus including an electrode member that is applied to activate the process gas supplied into the housing, The substrate processing method, Loading a substrate on the support member; Generating a plasma to remove the photoresist from the surface of the substrate; Supplying a cleaning liquid to the substrate to clean the substrate, and And unloading the substrate from the support member. The method of claim 10, The substrate processing method, And wetting the wafer by spraying a cleaning liquid onto the wafer surface prior to removing the photoresist. The method of claim 10 or 11, The substrate processing method, And drying the wafer by spraying dry gas onto the wafer surface between the cleaning of the substrate and the unloading of the substrate.

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