KR20010027577A - Di water heating apparatus for semiconductor developer - Google Patents

Di water heating apparatus for semiconductor developer Download PDF

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Publication number
KR20010027577A
KR20010027577A KR1019990039378A KR19990039378A KR20010027577A KR 20010027577 A KR20010027577 A KR 20010027577A KR 1019990039378 A KR1019990039378 A KR 1019990039378A KR 19990039378 A KR19990039378 A KR 19990039378A KR 20010027577 A KR20010027577 A KR 20010027577A
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South Korea
Prior art keywords
wafer
rinse liquid
spin chuck
rinse solution
semiconductor
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KR1019990039378A
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Korean (ko)
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김정원
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김영환
현대반도체 주식회사
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Priority to KR1019990039378A priority Critical patent/KR20010027577A/en
Publication of KR20010027577A publication Critical patent/KR20010027577A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE: An apparatus for heating rinse solution is to reduce surface tension of the rinse solution supplied to a wafer to prevent collapse of a photoresist pattern without damage of the photoresist pattern. CONSTITUTION: A wafer(12) is disposed on an upper face of a spin chuck(11), which is rotatably mounted. A microwave generator(13) is disposed at an upper portion of the spin chuck to generate high frequency wave on rinse solution, which is supplied on the wafer, and to heat the rinse solution. In this structure, the wafer is disposed on the upper face of the spin chuck to be attached on the spin chuck by vacuum, and then rotated at a desired rotational speed by the spin chuck. At the same time, the microwave generator generates the high frequency wave on the rotating wafer to heat the rinse on the rotating wafer. That is, the wafer is treated by an exposing and developing process, and then transferred to the spin chuck. Deionized water is supplied on the wafer as the rinse solution.

Description

반도체 현상장비의 린스액가열장치{DI WATER HEATING APPARATUS FOR SEMICONDUCTOR DEVELOPER}Rinse liquid heating device for semiconductor developing equipment {DI WATER HEATING APPARATUS FOR SEMICONDUCTOR DEVELOPER}

본 발명은 반도체 현상장비의 린스액가열장치에 관한 것으로, 특히 현상한 후에 린스액을 건조시키는 과정에서 포토레지스트 패턴의 무너짐(PATTERN COLLAPSE)이 발생되는 것을 감소시키도록 하는데 적합한 반도체 현상장비의 린스액가열장치에 관한 것이다.The present invention relates to a rinse liquid heating apparatus for semiconductor developing equipment, and more particularly to a rinse liquid for semiconductor developing equipment suitable for reducing the occurrence of PATTERN COLLAPSE in the process of drying the rinse liquid after development. It relates to a heating device.

반도체 웨이퍼 제조공정 중 트랙공정에서는 웨이퍼의 상면에 포토레지스트를 코팅하는 감광막코팅작업을 실시하고, 그와 같이 감광막이 코팅된 웨이퍼를 노광장비로 이동하여 마스크에 형성되어 있는 회로패턴이 이식되도록 노광작업을 실시하며, 그와 같이 노광작업된 웨이퍼는 현상장비로 이동하여 노광된 웨이퍼를 현상하는 현상작업을 실시한 다음, 린스액을 이용하여 웨이퍼에 존재하는 현상액을 제거하는 린스작업을 실시한다.In the semiconductor wafer manufacturing process, in the track process, a photoresist coating process is performed to coat a photoresist on the upper surface of the wafer, and the photoresist coated wafer is moved to an exposure apparatus so that the circuit pattern formed on the mask is implanted. The exposed wafer is moved to a developing apparatus, and a developing operation of developing the exposed wafer is performed, followed by a rinsing operation of removing a developer present on the wafer using a rinse liquid.

그런 다음, 상기와 같이 린스작업을 실시한 웨이퍼를 건조하게 되는데, 이때 웨이퍼의 상면에 남아있는 포토레지스트 패턴의 무너짐이 많이 발생되는데, 그와 같은 포토레지스트의 무너짐을 방지하기 위하여 두가지 방법을 주로 쓰고 있는데,Then, the wafer subjected to the rinsing operation is dried as described above. At this time, the photoresist pattern remaining on the upper surface of the wafer is frequently collapsed. Two methods are mainly used to prevent the photoresist from collapsing. ,

첫번째는, 현상후 유 브이 램프(UV LAMP)로 웨이퍼의 상면을 조사하여 포토레지스트 패턴을 경화(HARDENING)시키는 방법이 있고, 두번째로는 린스액의 표면장력을 낮추는 방법이다. 즉, 린스액을 디아이 워터가 아닌 알콜과 같은 유기 용매류를 쓰거나 일정온도로 가열된 디아이 워터를 사용하는 것이다.First, there is a method of curing the photoresist pattern by irradiating the upper surface of the wafer with a UV lamp after development, and secondly a method of lowering the surface tension of the rinse liquid. In other words, the rinse liquid may be organic solvents such as alcohol, not DI water, or DI water heated to a constant temperature.

참고로,Note that,

포토레지스트를 쓰러뜨리는 힘은 아래와 같은 식으로 나타낼 수 있다.[도 1참고]The force to knock down the photoresist can be expressed as follows.

압력 P = σ/R (σ: 표면장력)Pressure P = σ / R (σ: surface tension)

필링 포오스(PEELING FORCE), F = P × A (A : 종횡비(H/L))PEELING FORCE, F = P × A (A: Aspect Ratio (H / L))

= 2σ(cos θ)/d × A= 2σ (cos θ) / d × A

상기 식에서 알 수 있듯이 포토레지스트 패턴의 무너짐이 발생되는 힘은 린스액의 표면장력에 비례하므로, 포토레지스트 패턴의 무너짐을 방지하기 위해서는 린스액의 표면장력을 낮추는 것이 관건임을 알 수 있다.As can be seen from the above equation, since the force in which the photoresist pattern collapses is proportional to the surface tension of the rinse liquid, it can be seen that it is important to lower the surface tension of the rinse liquid to prevent the photoresist pattern from collapsing.

그러나, 린스액을 디아이 워터가 아닌 알콜과 같은 유기용매류를 사용하여 표면장력을 낮추는 경우에는 표면장력은 어느정도 낮출 수 있으나, 유기용매에 포토레지스트가 부분적으로 녹아 버리는 문제점이 있었다.However, when the surface tension is lowered to some extent by using an organic solvent such as alcohol instead of di water, the surface tension may be somewhat lowered, but the photoresist is partially dissolved in the organic solvent.

상기와 같은 문제점을 감안하여 안출한 본 발명의 목적은 포토레지스트 패턴을 손상시키지 않고 간단한 구성으로 포토레지스트 패턴의 무너짐을 방지하도록 하는데 적합한 반도체 현상장비의 린스액가열장치를 제공함에 있다.SUMMARY OF THE INVENTION An object of the present invention devised in view of the above problems is to provide a rinse liquid heating apparatus of a semiconductor developing apparatus suitable for preventing the photoresist pattern from collapsing in a simple configuration without damaging the photoresist pattern.

도 1은 종래의 포토레지스트 패턴의 무너짐이 발생되는 원리를 설명하기 위한 단면도.1 is a cross-sectional view for explaining the principle that the collapse of the conventional photoresist pattern.

도 2는 본 발명 반도체 현상장비의 린스액가열장치를 보인 정면도.Figure 2 is a front view showing a rinse liquid heating apparatus of the present invention semiconductor development equipment.

* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

11 : 스피닝 척 12 : 웨이퍼11 spinning chuck 12 wafer

13 : 마이크로 웨이브 제너레이터13: microwave generator

상기와 같은 본 발명의 목적을 달성하기 위하여 노광된 웨이퍼를 현상하기 위한 반도체 웨이퍼 현상장비에 있어서, 린스작업시 웨이퍼 상면에 존재하는 린스액에 고주파를 조사하여 린스액의 표면장력을 낮추기 위한 마이크로 웨이브 제너레이터를 구비하여서 구성되는 것을 특징으로 하는 반도체 현상장비의 린스액가열장치가 제공된다.In the semiconductor wafer developing apparatus for developing the exposed wafer in order to achieve the object of the present invention as described above, microwave for reducing the surface tension of the rinse liquid by irradiating the rinse liquid present on the upper surface of the wafer during the rinse operation Provided is a rinse liquid heating apparatus for semiconductor developing equipment, comprising: a generator.

이하, 상기와 같이 구성되는 본 발명 반도체 현상장비의 린스액가열장치를 첨부된 도면의 실시예를 참고하여 보다 상세히 설명하면 다음과 같다.Hereinafter, with reference to the embodiment of the accompanying drawings the rinse liquid heating apparatus of the present invention semiconductor development equipment configured as described above in detail as follows.

도 2는 본 발명 반도체 현상장비의 린스액가열장치를 보인 정면도로서, 도시된 바와 같이, 본 발명 반도체 현상장비의 린스액가열장치는 현상장비의 스피닝 척(11)이 회전가능하게 설치되어 있고, 그 스피닝 척(11)의 상면에는 버큠에 의하여 진공흡착되도록 웨이퍼(12)가 설치되어 있으며, 그 웨이퍼(12)가 설치된 스피닝 척(11)의 상측에는 린스액이 있는 웨이퍼(12)의 상면에 고주파를 조사하여 린스액을 가열하기 위한 마이크로 웨이브 제너레이터(13)가 설치되어 있다.Figure 2 is a front view showing a rinse liquid heating device of the semiconductor developing device of the present invention, as shown, the rinse liquid heating device of the semiconductor developing device of the present invention is rotatably installed spinning chuck 11 of the developing device, The wafer 12 is provided on the upper surface of the spinning chuck 11 so as to be vacuum-adsorbed by the vacuum, and on the upper surface of the spinning chuck 11 on which the rinse liquid is located above the spinning chuck 11 on which the wafer 12 is installed. The microwave generator 13 for heating a rinse liquid by irradiating a high frequency wave is provided.

상기와 같이 구성되어 있는 본 발명 반도체 현상장비의 린스액가열장치는 스피닝 척(11)의 상측에 웨이퍼(12)를 얹어 놓고, 웨이퍼(12)를 진공으로 흡착한 다음, 스피닝 척(11)을 일정속도로 회전시킴과 동시에 상기 마이크로 웨이브 제너레이터(13)에서 웨이퍼(12)의 상면에 고주파를 조사하여 웨이퍼(12)의 상면에 존재하는 린스액을 가열한다.In the rinse liquid heating apparatus of the present invention, the rinse liquid heating apparatus of the present invention has the wafer 12 placed on the spinning chuck 11, the wafer 12 is sucked in a vacuum, and then the spinning chuck 11 is mounted. While rotating at a constant speed, the microwave generator 13 heats the rinse liquid present on the upper surface of the wafer 12 by irradiating a high frequency to the upper surface of the wafer 12.

부연하여 설명하면, 웨이퍼(12)의 상면에 포토레지스트를 코팅하고, 노광을 실시한 다음, 현상장치쪽으로 이동하여 현상액으로 현상작업을 하면 노광된 부분이 현상이 되면서 노광되지 않은 부분과 구분이 이루어지는데, 이와 같이 현상작업이 이루어진 웨이퍼(12)를 스피닝 척(11)에 얹어 놓고 웨이퍼(12)를 진공흡착한 다음, 웨이퍼(12)의 상면에 디아이 워터를 공급하며 마이크로 웨이브 제너레이터(13)에서 웨이퍼(12)의 상면에 300MHz~300GHz대의 고주파를 조사하여 린스되는 디아이 워터를 순간적으로 가열한다.In detail, when the photoresist is coated on the upper surface of the wafer 12, the exposure is performed, and then moved to the developing apparatus and developed with a developer, the exposed part is developed and is distinguished from the unexposed part. The wafer 12 thus developed is placed on the spinning chuck 11, the vacuum is sucked on the wafer 12, and then the D water is supplied to the upper surface of the wafer 12, and the wafer is supplied from the microwave generator 13. The upper surface of (12) is irradiated with a high frequency band of 300 MHz to 300 GHz to instantly heat the rinse water.

이상에서 상세히 설명한 바와 같이, 본 발명 반도체 현상장비의 린스액가열장치는 현상장비의 스피닝 척 상부에 마이크로 웨이브 제너레이터를 구비하고, 현상을 마친 웨이퍼를 린스작업시에 린스액이 공급되는 웨이퍼의 상면에 마이크로 웨이브 제너레이터로 고주파를 조사하여 린스액을 가열함으로써, 린스액의 표면장력을 낮추게 되어 포토레지스트 패턴의 무너짐을 방지하는 효과가 있다.As described in detail above, the rinse liquid heating apparatus of the semiconductor developing apparatus of the present invention includes a microwave generator on the spinning chuck of the developing apparatus, and the developed wafer is placed on the upper surface of the wafer to which the rinse liquid is supplied during the rinsing operation. By heating the rinse liquid by irradiating a high frequency with a microwave generator, the surface tension of the rinse liquid is lowered, thereby preventing the photoresist pattern from collapsing.

Claims (1)

노광된 웨이퍼를 현상하기 위한 반도체 웨이퍼 현상장비에 있어서, 스피닝 척에서 린스되는 웨이퍼의 상면에 존재하는 린스액에 고주파를 조사하여 린스액을 가열함으로서 린스액의 표면장력을 낮추기 위한 마이크로 웨이브 제너레이터를 구비하여서 구성되는 것을 특징으로 하는 반도체 현상장비의 린스액가열장치A semiconductor wafer developing apparatus for developing an exposed wafer, comprising a microwave generator for lowering the surface tension of the rinse liquid by heating the rinse liquid by irradiating a high frequency to the rinse liquid present on the upper surface of the wafer rinsed by the spinning chuck. Rinse liquid heating apparatus for semiconductor developing equipment, characterized in that
KR1019990039378A 1999-09-14 1999-09-14 Di water heating apparatus for semiconductor developer KR20010027577A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107887258A (en) * 2016-09-29 2018-04-06 中国科学院微电子研究所 Method for repairing nanowire
CN108701602A (en) * 2016-03-30 2018-10-23 株式会社斯库林集团 Substrate board treatment

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63133634A (en) * 1986-11-26 1988-06-06 Fujitsu Ltd Method of drying substrate
JPH03142931A (en) * 1989-10-30 1991-06-18 Mitsubishi Electric Corp Device for drying semiconductor wafer
JPH04357836A (en) * 1991-06-04 1992-12-10 Matsushita Electric Ind Co Ltd Cleaning device for semiconductor wafer
KR19980042232A (en) * 1996-11-08 1998-08-17 가네꼬히사시 Microwave excitation cleaning and rinsing device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63133634A (en) * 1986-11-26 1988-06-06 Fujitsu Ltd Method of drying substrate
JPH03142931A (en) * 1989-10-30 1991-06-18 Mitsubishi Electric Corp Device for drying semiconductor wafer
JPH04357836A (en) * 1991-06-04 1992-12-10 Matsushita Electric Ind Co Ltd Cleaning device for semiconductor wafer
KR19980042232A (en) * 1996-11-08 1998-08-17 가네꼬히사시 Microwave excitation cleaning and rinsing device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108701602A (en) * 2016-03-30 2018-10-23 株式会社斯库林集团 Substrate board treatment
CN108701602B (en) * 2016-03-30 2023-03-24 株式会社斯库林集团 Substrate processing apparatus
CN107887258A (en) * 2016-09-29 2018-04-06 中国科学院微电子研究所 Method for repairing nanowire
CN107887258B (en) * 2016-09-29 2020-01-21 中国科学院微电子研究所 Method for repairing nanowire

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