CN111381457A - Micro-nano structure curing method - Google Patents
Micro-nano structure curing method Download PDFInfo
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- CN111381457A CN111381457A CN201811640086.9A CN201811640086A CN111381457A CN 111381457 A CN111381457 A CN 111381457A CN 201811640086 A CN201811640086 A CN 201811640086A CN 111381457 A CN111381457 A CN 111381457A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Abstract
The invention provides a micro-nano structure curing method, which comprises the steps of placing a wafer with a micro-nano graphic structure after development in a solution of deionized water, and replacing the developing solution on the wafer with the deionized water; placing the replaced wafer on a slide holder in a microwave drying chamber, and starting a vacuum adsorption device so as to fix the wafer on the slide holder; starting a microwave power source, completely applying microwave power into a microwave drying cavity through a microwave coupling matcher, and performing microwave drying and curing on the micro-nano graph structure on the wafer; and after the microwave power source is started for a period of time, starting a vacuum pump set connected with the microwave drying chamber, discharging water vapor in the chamber out of the chamber until the solidification is finished, and taking out the wafer. The micro-nano curing method can effectively and thoroughly remove the water on the wafer, so as to dry and cure the micro-nano structures, and the micro-nano structures cannot collapse in the curing process.
Description
Technical Field
The invention relates to the technical field of semiconductor micro-nano structure manufacturing, in particular to a micro-nano structure curing method.
Background
Modern integrated circuit processes are continually moving towards smaller feature sizes and larger wafer sizes, such as feature sizes going into 10 nanometers and wafer diameters greater than 12 inches, which present greater challenges to the microelectronic device fabrication process. Since collapse of micro-nano structures on a wafer has become an increasingly serious problem with further reduction of feature size and further increase of structural complexity in the manufacturing process of microelectronic devices. The reasons for the collapse of the structure are many, such as the application of external forces, the stress of the structure itself, weaker materials of the structure, and the surface tension during drying.
In general, a semiconductor micro-nano structure is manufactured by growing a thin film on a wafer, spin-coating a photoresist (or called resist), and then performing photolithography exposure, and a high-resolution photolithography technique is a necessary condition for obtaining a high-quality micro-nano structure pattern. The resist micro-nano graph structure processed by the high-resolution photoetching technology is adopted, the subsequent processing technology also directly influences the quality of the micro-nano graph structure, particularly the processing of the resist graph, and as the developing process is a wet process, a small amount of moisture possibly remains in the micro-nano graph structure on the wafer, particularly in a deep groove, and the moisture often causes the collapse of the micro-nano graph structure due to the action of surface tension in the drying process, so that the key for avoiding the collapse is how to quickly, effectively and thoroughly remove the moisture.
The traditional drying method, such as centrifugal drying, is effective for macro-structure by using centrifugal force to throw water out of the wafer, but it is difficult to completely remove the water attached to the micro-nano pattern structure.
As another example, nitrogen purging is performed by purging the micro-nano structures on the wafer with the ejected nitrogen, which is effective for shallow and wide trench structures, but is not effective for photoresist deep trenches with high aspect ratio, and even the structures may be blown down due to too large purging force.
In addition, some composite drying methods are added, namely a high-temperature drying process is added, drying is carried out in a baking mode, however, moisture cannot be thoroughly removed due to spin-drying or blowing, and in the baking process, the micro-nano pattern inevitably collapses from the inside due to the surface tension effect of the moisture attached to the structure of the micro-nano pattern, so that the whole wafer is scrapped, and the loss is large.
Disclosure of Invention
The invention aims to provide a micro-nano curing method, which can effectively and thoroughly remove water on a wafer so as to dry and cure micro-nano structures, and the micro-nano structures cannot collapse in the curing process.
In order to solve the technical problem, the invention provides a micro-nano curing method, which comprises the following steps:
placing the wafer with the micro-nano graphic structure after development in a deionized water solution, and replacing the developing solution on the wafer with the deionized water solution;
placing the replaced wafer on a slide holder in a microwave drying chamber, starting a vacuum adsorption device, and fixing the wafer on the slide holder;
starting a microwave power source, completely applying microwave power into the microwave drying cavity through a microwave coupling matcher, and performing microwave drying and curing on the micro-nano graph structure on the wafer;
after the microwave power source is pre-dried for a period of time, starting a vacuum pump set connected with a microwave drying cavity, discharging water vapor in the microwave drying cavity to the outside of the microwave drying cavity until water in the micro-nano graph structure on the wafer is completely removed, closing the microwave power source and the vacuum pump set, and taking out the wafer.
Further, the turning off the microwave power source and the vacuum pump set to further dry and solidify the wafer includes: and starting an ultraviolet curing lamp in the microwave drying chamber, and further drying and curing the wafer by irradiating the micro-nano graph structure on the wafer.
Further, the microwave power source is pre-dried for 5 to 100 minutes; the irradiation time is 5 minutes to 30 minutes.
Further, the microwave power applied to the microwave drying chamber by the microwave power source through the microwave coupling matcher is 100W to 5000W.
Further, the microwave frequency applied to the microwave drying chamber by the microwave power source is 900MHz to 13 GHz.
Compared with the prior art, the invention has the following advantages:
A. according to the micro-nano curing method, the microwave is utilized to enable the water reserved in the micro-nano graph structure on the wafer to enter a rotating supercritical state, so that a water molecule cluster structure is broken, and the surface tension of the water is eliminated, so that the problems of breakage, lodging or adhesion and the like of the micro-nano graph structure in the drying process are solved, the water on the wafer can be effectively and thoroughly removed, and the rapid curing of the micro-nano graph structure is realized.
B. The micro-nano curing method provided by the invention also utilizes an ultraviolet curing lamp to perform auxiliary curing on the micro-nano pattern structure, and is beneficial to enhancing the drying and curing effect.
Drawings
Fig. 1 is a schematic flow diagram of a micro-nano structure curing method provided by an embodiment of the invention.
Detailed Description
In order to better understand the technical solution, the technical solution will be described in detail with reference to the drawings and the specific embodiments.
First, the basic physical principle of drying using electromagnetic waves is briefly described, and since water is a polar molecule, the polar molecule does not show polarity in the absence of an applied electromagnetic field. Under the condition of an external alternating electromagnetic field, water molecules can be rapidly polarized, and the stronger the external alternating electromagnetic field is, the stronger the polarization effect is. At this time, the kinetic energy of the molecular heat motion is increased, that is, the heat quantity is increased, and the temperature of the water is increased, thereby realizing the conversion of electromagnetic energy into heat energy. Therefore, the water molecules can absorb electromagnetic waves, convert electromagnetic wave energy into heat, and absorb the heat. The polarity of water molecules is continuously reversed along with the continuous change of the direction of an external alternating electromagnetic field, and finally the water molecules rotate rapidly in the alternating electromagnetic field, kinetic energy is increased, liquid is rapidly heated and vaporized, a gas-liquid interface is prevented from being generated, a good drying effect is achieved, and nondestructive drying is realized.
Referring to fig. 1, a micro-nano structure curing method provided by the embodiment of the present invention includes the following steps:
The microwave power source is connected with the microwave coupling matcher through a microwave transmission wire, and the microwave coupling matcher is arranged on the side wall of the cavity and comprises a microwave antenna, an impedance matching network and a microwave detector. The microwave power source transmits microwave energy with certain power to the microwave coupling matcher through a microwave transmission wire, the microwave coupling matcher applies the microwave energy to the inside of the cavity by means of a microwave antenna, and meanwhile, the impedance matching network and the microwave detector are started to detect in real time and perform impedance matching, so that the output power of the microwave power source can be completely applied to the inside of the cavity, and therefore moisture attached to the inside of the micro-nano graph structure on the wafer can absorb corresponding microwave energy, polarization of water molecules is achieved, the wafer enters a rotary supercritical state, the water molecule cluster structure is broken, surface tension of the water is eliminated, electromagnetic wave energy is converted into heat, and the liquid state is rapidly heated and vaporized.
Wherein the microwave power source applies microwaves to the microwave drying chamber in a frequency range of 900MHz to 13GHz, preferably 915MHz to 10GHz, in particular 915MHz to 3 GHz; the microwave power applied by the microwave power source to the microwave drying chamber through the microwave coupling matcher is in the range of 100W to 5000W, preferably 200W to 3500W, and particularly 200W to 2000W. The microwave transmission wire can adopt waveguide band or coaxial cable.
After the microwave power source is pre-dried for a period of time, for example, 20 minutes, the vacuum pump set is started to remove the water vapor in the chamber to the outside of the chamber until the microwave drying and curing process is finished, and step 150 is performed. The drying and curing time of the step can be set to be 10 minutes to 200 minutes, the drying and curing time can be set according to the size of the wafer, the complexity of the micro-nano graph structure and the wetting degree of the wafer, a temperature and humidity sensor can also be arranged in the chamber, and when the temperature and the humidity reach preset values, the step 150 is carried out.
And 150, closing the microwave power source and the vacuum pump set, starting an ultraviolet curing lamp in the microwave drying chamber, and irradiating the nano-pattern structure, so as to further dry and cure the wafer, wherein the drying and curing time in the step can be set to be 5-30 minutes, and finally, taking out the wafer after the curing is finished.
Therefore, the micro-nano structure curing method solves the problems of fracture, lodging or adhesion and the like of the micro-nano graph structure in the drying process, and can effectively and thoroughly remove water on the wafer, thereby achieving the purpose of rapidly curing the micro-nano graph.
Finally, it should be noted that the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, and although the present invention has been described in detail with reference to examples, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, which should be covered by the claims of the present invention.
Claims (5)
1. A micro-nano structure curing method is characterized by comprising the following steps:
placing the wafer with the micro-nano graphic structure after development in a deionized water solution, and replacing the developing solution on the wafer with the deionized water solution;
placing the replaced wafer on a slide holder in a microwave drying chamber, starting a vacuum adsorption device, and fixing the wafer on the slide holder;
starting a microwave power source, completely applying microwave power into the microwave drying cavity through a microwave coupling matcher, and performing microwave drying and curing on the micro-nano graph structure on the wafer;
after the microwave power source is pre-dried for a period of time, starting a vacuum pump set connected with the microwave drying cavity, discharging water vapor in the microwave drying cavity to the outside of the microwave drying cavity, so that moisture in the micro-nano graph structure on the wafer is removed, closing the microwave power source and the vacuum pump set, further drying and solidifying the wafer, and taking out the wafer.
2. The micro-nano structure curing method according to claim 1, wherein the step of turning off the microwave power source and the vacuum pump set to further dry and cure the wafer further comprises the steps of:
and starting an ultraviolet curing lamp in the microwave drying chamber, and further drying and curing the wafer by irradiating the micro-nano graph structure on the wafer.
3. The micro-nano structure curing method according to claim 1, characterized in that: the pre-drying time of the microwave power source is 5 minutes to 100 minutes; the irradiation time is 5 minutes to 30 minutes.
4. The micro-nano structure curing method according to claim 1, characterized in that: the microwave power applied to the microwave drying chamber by the microwave power source through the microwave coupling matcher is 100W to 5000W.
5. The micro-nano structure curing method according to claim 4, characterized in that: the microwave frequency applied to the microwave drying chamber by the microwave power source is 900MHz to 13 GHz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811640086.9A CN111381457A (en) | 2018-12-29 | 2018-12-29 | Micro-nano structure curing method |
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| CN201811640086.9A CN111381457A (en) | 2018-12-29 | 2018-12-29 | Micro-nano structure curing method |
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| CN111381457A true CN111381457A (en) | 2020-07-07 |
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| CN201811640086.9A Pending CN111381457A (en) | 2018-12-29 | 2018-12-29 | Micro-nano structure curing method |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4428659A (en) * | 1981-06-02 | 1984-01-31 | Napp Systems (Usa), Inc. | Apparatus and method for removing soluble portions of a coating |
| CN1957260A (en) * | 2004-05-19 | 2007-05-02 | Jsr株式会社 | Sheet probe, manufacturing method and application therefor |
| CN104347450A (en) * | 2013-08-08 | 2015-02-11 | 中国科学院微电子研究所 | Semiconductor drying device and method |
-
2018
- 2018-12-29 CN CN201811640086.9A patent/CN111381457A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4428659A (en) * | 1981-06-02 | 1984-01-31 | Napp Systems (Usa), Inc. | Apparatus and method for removing soluble portions of a coating |
| CN1957260A (en) * | 2004-05-19 | 2007-05-02 | Jsr株式会社 | Sheet probe, manufacturing method and application therefor |
| CN104347450A (en) * | 2013-08-08 | 2015-02-11 | 中国科学院微电子研究所 | Semiconductor drying device and method |
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