CN108878254B - Semiconductor device and method for cleaning photoresist pattern - Google Patents
Semiconductor device and method for cleaning photoresist pattern Download PDFInfo
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- CN108878254B CN108878254B CN201710328816.0A CN201710328816A CN108878254B CN 108878254 B CN108878254 B CN 108878254B CN 201710328816 A CN201710328816 A CN 201710328816A CN 108878254 B CN108878254 B CN 108878254B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
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- Cleaning Or Drying Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
A method for cleaning photoresist, comprising: immersing a photoresist pattern formed on the surface of a substrate in deionized water; carrying out first rotary drying to remove part of deionized water in the photoresist pattern gaps; adding a hydrophobic solvent into the photoresist pattern gap, wherein the density of the hydrophobic solvent is greater than that of the deionized water; and carrying out secondary spin-drying.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a semiconductor device and a method for cleaning a photoresist pattern.
Background
In the field of semiconductor technology, for example, in the manufacturing process of a wafer, various electronic elements such as a triode, a diode, a capacitor, a resistor and the like are arranged on the surface of the wafer, and the elements are formed through a photoetching process, the photoetching determines the critical dimension of a semiconductor device, which is critical to the manufacturing of the semiconductor device, and the errors in the photoetching process can cause the distortion of a pattern, and finally, the electrical property of the device is affected.
A photoresist is typically used in a photolithography process, and a photoresist pattern is formed by photolithography on the photoresist to define the shape of a pattern remaining on the wafer. The photoresist pattern is often deformed during the cleaning process, which reduces the production efficiency, and therefore, the cleaning process of the photoresist pattern needs to be improved.
Disclosure of Invention
The invention aims to provide a semiconductor device and a method for cleaning a photoresist pattern, which can solve the problem of deformation of the photoresist in the cleaning process.
To solve the above technical problem, an embodiment of the present invention provides a method for cleaning a photoresist pattern, including: immersing a photoresist pattern formed on the surface of a substrate in deionized water; carrying out first rotary drying to remove part of deionized water in the photoresist pattern gaps; adding a hydrophobic solvent into the photoresist pattern gap, wherein the density of the hydrophobic solvent is greater than that of the deionized water; and carrying out secondary spin-drying.
Optionally, the rotation speed of the first spin-drying or the second spin-drying is less than 2500 rpm.
Optionally, the rotation speed of the first spin-drying or the second spin-drying is 200rpm to 2000 rpm.
Optionally, the rotation speed of the first spin-drying or the second spin-drying is 800rpm to 1000 rpm.
Optionally, the hydrophobic solvent is a volatile solvent.
Alternatively, the hydrophobic solvent has a boiling point of 80 ℃ to 130 ℃.
Optionally, the hydrophobic solvent comprises dichloroethane.
Optionally, baking is performed after the second spin drying, wherein the baking temperature is 60-80 ℃.
Optionally, adding a hydrophobic solvent into the photoresist pattern gap is performed in a wetting manner.
Optionally, before immersing the photoresist pattern formed on the surface of the substrate in the deionized water, the method further comprises: and photoetching the photoresist coated on the surface of the substrate to form a photoresist pattern.
Optionally, the forming of the photoresist pattern includes pre-baking, exposing, post-baking, and developing.
Optionally, the substrate is a semiconductor substrate.
The embodiment of the invention also provides a semiconductor device, and the cleaning method of the photoresist pattern is adopted to clean in the process of manufacturing the semiconductor device.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following beneficial effects:
by adding the hydrophobic solvent, the interface adhesive force of the deionized water is reduced, so that the deionized water can be thrown out under low-speed drying, and the photoresist pattern is prevented from deforming during high-speed drying, thereby improving the quality of the photoresist pattern.
Furthermore, the hydrophobic solvent is a volatile solvent and can be removed by low-temperature baking, the temperature can be quickly raised to a specified temperature by the low-temperature baking, the consumed time is short, and the consumed energy is less.
Drawings
FIG. 1 is a scanning electron microscope image during cleaning of a photoresist pattern;
FIG. 2 is a schematic diagram of a method for cleaning a photoresist pattern according to one embodiment of the invention;
FIGS. 3-8 are schematic diagrams of steps for cleaning a photoresist pattern provided by one embodiment of the present invention
Detailed Description
The wafer test structure of the present invention will be described in more detail in conjunction with the schematic drawings, in which preferred embodiments of the present invention are shown, it being understood that one skilled in the art may modify the invention described herein while still achieving the advantageous effects of the present invention. Accordingly, the following description should be construed as broadly as possible to those skilled in the art and not as limiting the invention.
In a lithographic process, a substrate is provided, optionally a semiconductor substrate. Specifically, the semiconductor substrate may be a silicon wafer or a wafer, and the substrate may also be silicon oxide or glass, and different types of semiconductor devices are deposited on different types of semiconductor substrates. First, a photoresist is coated on the substrate, and the coating mode can be spin coating. And photoetching the photoresist coated on the surface of the substrate to form a photoresist pattern. Specifically, forming the photoresist pattern includes: pre-baking, exposing, post-baking and developing. The photoresist is pre-baked to remove the solvent in the photoresist, and the pre-baking temperature can be 80-120 ℃. The photoresist is then exposed, for example, by irradiating the photoresist with ultraviolet light. And post-baking the photoresist after exposure, thereby effectively reducing the influence of the standing wave effect. The temperature of the postbaking is 110 ℃ to 130 ℃. And after post baking, developing the photoresist, wherein the photoresist is divided into a positive photoresist and a negative photoresist according to the property of the photoresist, and correspondingly, the photoresist of the exposed photoresist part or the unexposed part in the developing process can react with a developing solution, so that a pattern to be expected is formed, and a photoresist pattern is formed. After development, the photoresist pattern surface has solvent, needs to be cleaned, and can be immersed in deionized water for cleaning. After the cleaning, the deionized water is removed, and at this time, a spin-drying method may be selected, that is, the photoresist pattern is placed on a disk, the disk is rapidly rotated to spin off the moisture in the photoresist pattern, and the size of the photoresist pattern is reduced as the size of the semiconductor device is gradually reduced, and during the spin-drying, in order to completely spin off the deionized water, the rotation speed of the disk is generally set to about 3000rpm, and the rapid rotation may cause the photoresist pattern to be deformed (as shown in fig. 1).
An embodiment of the present invention provides a method for cleaning a photoresist, and fig. 2 shows an embodiment of the present invention
The method for cleaning the photoresist pattern specifically comprises the following steps:
(1) developing the photoresist to form a photoresist pattern;
(2) immersing the developed photoresist pattern into deionized water;
(3) carrying out first rotary drying to remove part of deionized water in the photoresist pattern gaps;
(4) adding a hydrophobic solvent into the photoresist pattern gap, the hydrophobic solvent having a density greater than that of the photoresist pattern gap
Density of the ionized water;
(5) and carrying out secondary spin-drying.
According to the embodiment of the invention, after a photoresist developing process, a photoresist pattern is formed, the photoresist pattern is cleaned, the photoresist pattern is immersed into deionized water, the deionized water dissolves chemical reagents on the surface of the photoresist pattern, and then the deionized water is removed through spin-drying for the first time.
According to the embodiment of the invention, the hydrophobic solvent is added into the photoresist pattern gaps after the first spin-drying, and the density of the hydrophobic solvent is greater than that of the deionized water, so that the deionized water is positioned below the hydrophobic solvent to form a deionized water/hydrophobic solvent interface. Therefore, in the second spin drying, the deionized water is first spun out. Therefore, the photoresist pattern can be spin-dried at a lower rotating speed, so that the problem of deformation of the photoresist pattern caused by an over-high rotating speed is solved.
The invention is explained below with reference to fig. 3-8. Fig. 3-8 are schematic diagrams of steps for cleaning a photoresist pattern according to one embodiment of the present invention.
As shown in fig. 3, a photoresist is first coated on the substrate 101 in a manner of spin coating with a gap between adjacent photoresist patterns. After pre-baking, exposure, post-baking and development, a photoresist pattern 102 is formed, the photoresist pattern is immersed in deionized water to clean the residual solvent, and at this time, the deionized water 103 is soaked into the photoresist pattern gap (as shown in fig. 4), and a spin-drying method is adopted to remove the deionized water 103 in the photoresist gap. First spin-drying is performed to remove a portion of moisture in the photoresist pattern gaps, and then a hydrophobic solvent 104 (as shown in fig. 5) is added into the photoresist pattern gaps, wherein the density of the hydrophobic solvent 104 is greater than that of the deionized water 103. The hydrophobic solvent 104 may be added by immersing the photoresist pattern in the hydrophobic solvent 104, or the hydrophobic solvent 104 may be added to the photoresist pattern gap by spraying, injecting, or the like. After the hydrophobic solvent 104 is added to the photoresist pattern gap, it will sink to the lower side of the deionized water because its density is higher than that of the deionized water, and the deionized water 103 will be on the surface of the hydrophobic solvent (as shown in fig. 6). Subsequently, a second spin-drying is performed, in which the deionized water 103 is easily spun off due to its weak surface adhesion to the hydrophobic solvent 104. Optionally, the rotation speed of the first spin-drying or the second spin-drying is less than 2500 rpm. For example, optionally, the rotation speed of the first spin-drying or the second spin-drying is less than 200rpm to 2000 rpm. Under the condition that the hydrophobic solvent 104 is not used, the rotating speed of spin-drying needs about 3000rpm, so that the invention can greatly reduce the rotating speed of spin-drying, save energy and reduce machine loss, and can efficiently spin-dry deionized water, prevent photoresist patterns from deforming under high-speed rotation and improve the quality of the photoresist patterns. If the rotation speed is low, all deionized water cannot be completely removed, if the rotation speed is too high, the photoresist pattern is deformed, for example, the photoresist pattern collapses, optionally, the rotation speed of the first spin-drying or the second spin-drying is 800rpm to 1000rpm, and by adopting the rotation speed in the interval, the deionized water can be effectively removed, and the photoresist pattern does not collapse. In addition, the rotating speeds of the two spin drying processes can be different or the same, so long as the purpose of the invention is achieved.
After the second spin-dry, the deionized water 103 is completely removed and the hydrophobic solvent 104 may still be present in the photoresist pattern gaps (as shown in fig. 7). Optionally, in the present invention, the hydrophobic solvent 104 is a volatile solvent, and the boiling point of the hydrophobic solvent is 80 ℃ to 130 ℃. Therefore, optionally, baking is carried out after the second spin drying, the baking temperature can be 60-80 ℃, and because the volatile solvent is selected in the invention, the melting point is low, the volatile solvent can be volatilized by baking at low temperature. The low-temperature baking can quickly raise the temperature to the specified temperature, the consumed time is short, and the consumed energy is less. Alternatively, the hydrophobic solvent is a hydrophobic organic solvent, for example the hydrophobic solvent comprises dichloroethane or carbon tetrachloride, and the hydrophobic solvent may be a single component hydrophobic solvent or a mixture of multiple component hydrophobic solvents. Solvents that are hydrophobic and volatile are within the spirit of the invention and may be selected. After baking, the hydrophobic solvent 104 is also removed (as shown in fig. 8), and optionally, an air extractor is further provided to extract the hydrophobic solvent in a gaseous state, so as to avoid contamination and finally complete the photoresist pattern cleaning process.
The method for cleaning the photoresist pattern can effectively clean the solvent in the photoresist pattern, can also effectively remove deionized water, and can dry at a lower temperature, and the method is simple and easy to implement.
The embodiment of the invention also provides the photoresist which is cleaned by adopting the process method.
The embodiment of the invention also provides a semiconductor device, and the cleaning method of the photoresist pattern is adopted to clean in the process of manufacturing the semiconductor device.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (13)
1. A method of cleaning a photoresist pattern, comprising:
immersing a photoresist pattern formed on the surface of a substrate in deionized water;
carrying out first rotary drying to remove part of deionized water in the photoresist pattern gaps;
adding a hydrophobic solvent into the photoresist pattern gap, wherein the density of the hydrophobic solvent is greater than that of the deionized water;
and carrying out secondary spin-drying.
2. The method of cleaning a photoresist pattern of claim 1, wherein a rotation speed of the first spin-dry or the second spin-dry is less than 2500 rpm.
3. The method of cleaning the photoresist pattern of claim 2, wherein the rotation speed of the first spin-drying or the second spin-drying is 200rpm to 2000 rpm.
4. The method of cleaning the photoresist pattern of claim 3, wherein the rotation speed of the first spin-drying or the second spin-drying is 800rpm to 1000 rpm.
5. The method of cleaning a photoresist pattern of claim 1, wherein the hydrophobic solvent is a volatile type solvent.
6. The method of cleaning the photoresist pattern of claim 1, wherein the hydrophobic solvent has a boiling point of 80 ℃ to 130 ℃.
7. The method of cleaning the photoresist pattern according to claim 5 or 6, wherein the hydrophobic solvent comprises dichloroethane or carbon tetrachloride.
8. The method of cleaning a photoresist pattern of claim 1, wherein baking is performed after the second spin-drying, the baking temperature being 60 ℃ to 80 ℃.
9. The method of cleaning a photoresist pattern according to claim 1, wherein the adding of the hydrophobic solvent into the gap of the photoresist pattern is performed by immersion.
10. The method of cleaning a photoresist pattern of claim 1, wherein before immersing the photoresist pattern formed on the surface of the substrate in deionized water, further comprising: and photoetching the photoresist coated on the surface of the substrate to form a photoresist pattern.
11. The method of cleaning the photoresist pattern of claim 10, wherein the forming the photoresist pattern comprises pre-baking, exposing, post-baking, and developing.
12. The method of cleaning a photoresist pattern of claim 1, wherein the substrate is a semiconductor substrate.
13. A semiconductor device characterized in that cleaning is performed by the method for cleaning a resist pattern according to any one of claims 1 to 12 in a process for manufacturing the semiconductor device.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710328816.0A CN108878254B (en) | 2017-05-11 | 2017-05-11 | Semiconductor device and method for cleaning photoresist pattern |
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| CN201710328816.0A CN108878254B (en) | 2017-05-11 | 2017-05-11 | Semiconductor device and method for cleaning photoresist pattern |
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| CN108878254A CN108878254A (en) | 2018-11-23 |
| CN108878254B true CN108878254B (en) | 2020-10-20 |
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| CN1224091C (en) * | 2002-06-12 | 2005-10-19 | 南亚科技股份有限公司 | Process for making shallow ditch isolating member and process for partly removing oxidizing layer |
| US20080280230A1 (en) * | 2007-05-10 | 2008-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photolithography process including a chemical rinse |
| US9847302B2 (en) * | 2013-08-23 | 2017-12-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer surface conditioning for stability in fab environment |
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