CN110737171B - Nano pattern and preparation method thereof, and preparation method of nano structure - Google Patents
Nano pattern and preparation method thereof, and preparation method of nano structure Download PDFInfo
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- CN110737171B CN110737171B CN201910374321.0A CN201910374321A CN110737171B CN 110737171 B CN110737171 B CN 110737171B CN 201910374321 A CN201910374321 A CN 201910374321A CN 110737171 B CN110737171 B CN 110737171B
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- 239000002086 nanomaterial Substances 0.000 title claims abstract description 14
- 238000002360 preparation method Methods 0.000 title abstract description 20
- 238000010894 electron beam technology Methods 0.000 claims abstract description 106
- 239000000758 substrate Substances 0.000 claims abstract description 91
- 238000004528 spin coating Methods 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims description 114
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 64
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 26
- 239000008367 deionised water Substances 0.000 claims description 22
- 229910021641 deionized water Inorganic materials 0.000 claims description 22
- 238000011161 development Methods 0.000 claims description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 9
- 238000002791 soaking Methods 0.000 claims description 8
- 239000003153 chemical reaction reagent Substances 0.000 claims description 7
- 238000011010 flushing procedure Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 4
- 238000005259 measurement Methods 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 7
- 238000001514 detection method Methods 0.000 description 4
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 4
- 238000000861 blow drying Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000000609 electron-beam lithography Methods 0.000 description 3
- 239000002070 nanowire Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
Abstract
The invention relates to a nano pattern, a preparation method thereof and a preparation method of a nano structure. The preparation method of the nano pattern comprises the following steps: spin-coating an electron beam resist on a substrate to obtain an electron beam resist layer; wherein the thickness of the electron beam resist layer is 50 nm-110 nm; and performing electron beam exposure on the electron beam resist layer to obtain a nano pattern, wherein the exposure dose of the electron beam exposure is 1C/m 2 ～5C/m 2 . According to the preparation method of the nano pattern, the nano pattern with the size of less than 10 nanometers can be prepared.
Description
Technical Field
The invention relates to the technical field of nanometer processing, in particular to a nanometer pattern, a preparation method thereof and a preparation method of a nanometer structure.
Background
Electron beam lithography is a key technology that has driven the development of microelectronics and micromachining, particularly in the advanced mask fabrication and nanofabrication fields.
Although electron beam lithography can design arbitrarily shaped patterns by software, nano-scale patterns can be prepared. However, using electron beam lithography to produce patterns with widths or gaps below 10 nanometers remains difficult.
Disclosure of Invention
Based on this, it is necessary to provide a method for producing nanopatterns of 10nm or less.
In addition, a preparation method of the nano pattern and the nano structure is also provided.
A method for preparing a nanopattern, comprising the steps of:
spin-coating an electron beam resist on a substrate to obtain an electron beam resist layer; wherein the thickness of the electron beam resist layer is 50 nm-110 nm; and
Carrying out electron beam exposure on the baked electron beam resist layer to obtain the nano pattern, wherein the exposure dose of the electron beam exposure is 1C/m 2 ～5C/m 2 。
According to the preparation method of the nanopattern, the nanopattern with the thickness, exposure parameters, baking temperature and development time of the electron beam resist layer can be prepared by the design.
In one embodiment, the e-beam resist is selected from one of AR-P6200 and ZEP 520.
In one embodiment, the step of spin coating an electron beam resist on the substrate is preceded by the steps of cleaning and baking the substrate.
In one embodiment, the step of cleaning and baking the substrate comprises:
cleaning the substrate by using an SC1 cleaning solution and an SC2 cleaning solution; the SC1 cleaning solution comprises NH 4 OH、H 2 O 2 And water, NH in the SC1 cleaning solution 4 OH、H 2 O 2 And the volume ratio of water is 1:1:5 to 10; the SC2 cleaning solution comprises HCl and H 2 O 2 And water. HCl, H in the SC2 cleaning solution 2 O 2 And the volume ratio of water is 1:1:5 to 10; and
And baking the cleaned substrate.
In one embodiment, in the step of baking the cleaned substrate, the baking is hot plate baking, the baking temperature is 120-180 ℃, and the baking time is 1-30 min.
In one embodiment, the step of baking the electron beam resist layer is further included before the step of electron beam exposing and developing the electron beam resist layer.
In one embodiment, in the step of baking the electron beam resist layer, the baking is a hot plate baking, the baking temperature is 120-170 ℃, and the baking time is 1-30 min.
In one embodiment, in the step of performing electron beam exposure and development on the electron beam resist layer, the developing developer is AR600-546, and the developing time is 1 min-10 min.
A nanopattern produced by the process for producing a nanopattern according to any one of claims 1 to 8.
The application of the nano pattern in the preparation of a radio frequency device or a photoelectric detection device.
A method of preparing a nanostructure, comprising the steps of:
and etching the nano pattern serving as a mask to obtain the nano structure.
In one embodiment, the nanostructure is a gate of a radio frequency device or a nanowire of a photodetector device.
Drawings
FIG. 1 is an SEM image of example 1;
fig. 2 is an SEM image of comparative example 1.
Detailed Description
In order that the invention may be readily understood, a more complete description of the invention will be rendered by reference to the appended drawings. Some embodiments of the invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
The preparation method of the nano pattern in one embodiment comprises the following steps:
step S110, cleaning and baking the substrate.
Specifically, the step of cleaning and baking the substrate includes operations S111 to S113.
Operation S111, cleaning the substrate.
The substrate is cleaned with an SC1 cleaning solution and an SC2 cleaning solution. SC1 cleaning solution comprises NH 4 OH、H 2 O 2 NH in water, SC1 cleaning solution 4 OH、H 2 O 2 And the volume ratio of water is 1:1:5 to 10; the SC2 cleaning solution comprises HCl, H 2 O 2 And water. HCl, H in SC2 cleaning solution 2 O 2 And the volume ratio of water is 1:1:5 to 10.
The substrate is selected according to the application of the micro-nano pattern to be prepared. For example, a silicon wafer may be used as the substrate. The SC1 cleaning solution is used for removing the particulate matters on the substrate, and the SC2 cleaning solution is used for removing the heavy metal contamination on the substrate.
In one embodiment, NH in SC1 cleaning solution 4 OH、H 2 O 2 And the volume ratio of water is 1:1:5. HCl, H in SC2 cleaning solution 2 O 2 And the volume ratio of water is 1:1:5.
in one embodiment, the substrate is cleaned with the SC1 cleaning solution and the SC2 cleaning solution, respectively, in sequence. Specifically, cleaning the substrate with SC1 cleaning solution for 8-10 min, and then cleaning with water; then cleaning the substrate by using SC2 cleaning liquid for 8-10 min, cleaning the substrate by using water, and then soaking the substrate in BOE (Buffered Oxide Etch buffer oxide etchant) for 10-30 s; finally, the substrate is washed with water and dried. Further, the water is deionized water; the substrate is dried by blowing nitrogen.
Operation S113, baking the cleaned substrate.
The baking and cleaning substrate can further remove the water vapor remained on the substrate, and the adhesion of the subsequent electron beam resist to the substrate is increased, so that the prepared nano pattern is not easy to fall off from the substrate. Specifically, the cleaned substrate is baked using a hot plate or an oven. Of course, in other embodiments, other baking methods may be employed as long as it is capable of facilitating adhesion of the electron beam resist layer to the substrate. In one embodiment, the baking is hot plate baking, the baking temperature is 120-180 ℃, and the baking time is 1-30 min. Preferably, the baking temperature is 150-180 ℃ and the baking time is 1-5 min.
And step S120, spin-coating an electron beam resist on the substrate to obtain an electron beam resist layer.
Specifically, the thickness of the electron beam resist layer is 50nm to 110nm. Further, wherein the thickness of the electron beam resist layer is 70nm to 90nm. Preferably, the thickness of the electron beam resist layer is 80nm.
In one embodiment, the e-beam resist is selected from one of AR-P6200 and ZEP 520. AR-P6200 is an electron beam resist manufactured by Allresist, germany. ZEP520 is an electron beam resist manufactured by japan red corporation.
The electron beam resist HSQ (Hydrogen silsesquioxane) commonly used at present contains tetramethyl ammonium hydroxide with extremely toxicity, which affects the health of operators, and HSQ is easy to deteriorate and has short storage period, generally only 6 months. AR-P6200 and ZEP520 have less impact on the health of the operator and have a longer shelf life than HSQ.
In one embodiment, the e-beam resist is AR-P6200.
Step S130, baking the electron beam resist layer.
Specifically, the electron beam resist layer is baked using an oven or a hot plate. The purpose of baking the e-beam resist layer is to cure, remove the solution in the e-beam resist, and at the same time change the sensitivity of the e-beam resist. Of course, in other embodiments, other baking methods may be employed as long as it is capable of facilitating adhesion of the electron beam resist layer to the substrate. In one embodiment, the baking is hot plate baking, the baking temperature is 120-170 ℃, and the baking time is 1-30 min. Preferably, the baking temperature is 130-150 ℃ and the baking time is 1-3 min.
And step S140, carrying out electron beam exposure and development on the baked electron beam resist layer to obtain the nano pattern.
Specifically, the baked electron beam resist layer is subjected to electron beam direct writing exposure according to a preset pattern, and after the exposure is finished, a developer corresponding to the electron beam resist is added for development, so that a nano pattern is obtained. Wherein the exposure dose is 1C/m 2 ～5C/m 2 。
In one embodiment, the accelerating voltage of the exposure is 30 kV-100 kV. The electron beam current is 100 pA-13 nA.
In one embodiment, the developer is AR 600-546.AR 600-546 has high resolution and development time of 1 mm-10 min. Further, the development time is 1min to 3min.
In one embodiment, the nanopattern is dried after development is completed. Specifically, the nanopattern is blow-dried with nitrogen gas.
The preparation method of the nano pattern has simple preparation process, and can realize the preparation of the nano pattern with the width or the gap below 10 nanometers through the design of the thickness, the exposure parameter, the baking temperature and the development time of the electron beam resist layer.
An embodiment of the nanopattern is produced by the above process for producing nanopattern.
The application of the nano pattern in the preparation of electronic devices.
Specifically, the nano pattern is applied to the preparation of a radio frequency device or a photoelectric detection device.
The preparation method of the nanostructure of one embodiment comprises the following steps:
and etching by taking the nano pattern as a mask to obtain the nano structure.
Specifically, spin-coating an electron beam resist on a substrate to obtain an electron beam resist layer; which is a kind ofThe thickness of the electron beam resist layer is 50 nm-110 nm; carrying out electron beam exposure and development on the electron beam resist layer to obtain a nano pattern, wherein the exposure dose of the electron beam exposure is 1C/m 2 ～5C/m 2 The method comprises the steps of carrying out a first treatment on the surface of the Inductively coupled plasma etching the substrate with the nanopattern as a mask to transfer the nanopattern to the substrate; and removing the electron beam resist layer to obtain the nanostructure.
In one embodiment, the nanostructure is a gate of a radio frequency device or a nanowire of a photodetector device.
According to the radio frequency device, the nano pattern with the gap below 10 nanometers is used as the mask, and the width of the prepared grid is below 10 nanometers, so that the performance of the radio frequency device is improved, and the running speed is higher.
According to the photoelectric detection device, the nano pattern with the gap below 10 nanometers is used as the mask, and the width of the prepared nanowire is below 10 nanometers, so that the performance of the photoelectric detection device is improved, and the running speed is higher.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
The following is a detailed description of specific embodiments. The following examples are not specifically described but do not include other components than the unavoidable impurities. The drugs and apparatus used in the examples are all routine choices in the art, unless specifically indicated. The experimental methods without specific conditions noted in the examples were carried out according to conventional conditions, such as those in the literature, books, or recommended methods by the manufacturer.
AR-P6200, AR600-546 of the following examples are from Allresist corporation.
Example 1
(1) Cleaning a substrate: the substrate is cleaned, and the specific cleaning operation is as follows: the substrates were each cleaned with SC1 cleaning solution for 10 minutes. Wherein the SC1 cleaning solution is NH 4 OH、H 2 O 2 And water mixture, NH in SC1 cleaning solution 4 OH、H 2 O 2 And the volume ratio of water is 1:1:5. then cleaning the substrate with deionized water; then cleaning the substrate for 10 minutes by using SC2 cleaning liquid, and then cleaning the substrate by using deionized water; wherein SC2 is washedThe liquid is HCl, H 2 O 2 And water mixture, HCl, H in SC2 cleaning solution 2 O 2 And the volume ratio of water is 1:1:5, a step of; finally, soaking in BOE for 10 seconds, cleaning with deionized water, and then flushing with nitrogen.
(2) And (3) placing the cleaned substrate on a hot plate for baking, wherein the baking temperature is 180 ℃, and the baking time is 10min.
(3) Spin-coating electron beam resist on the baked substrate to obtain an electron beam resist layer. Wherein the electron beam resist is AR-P6200, and the thickness of the electron beam resist layer is 80nm.
(4) And (3) baking the electron beam resist layer on a hot plate at 150 ℃ for 1min.
(5) The baked electron beam resist layer was exposed in an electron beam exposure apparatus (nanobeam NB 5). Wherein the accelerating voltage in the exposure process is 80KV, the beam current of the electron beam is 1.5nA, and the exposure dose is 2.5C/m 2 。
(6) After the exposure, development is performed with a developer. Wherein, the developing reagent in the developing process is AR600-546, and the developing time is 1.5min. After the development was completed, the nanopattern of example 1 was obtained by blow-drying with a nitrogen gun.
(7) And (3) placing the nano pattern obtained in the step (6) into an SEM for measurement, and obtaining a measurement result.
The measurement results of example 1 are shown in fig. 1. In FIG. 1, the gap at 1 has a width of 9.443nm, the gap at 2 has a width of 6.878nm, and the gap at 3 has a width of 6.878nm. The thickness of the nanopattern was 80nm.
Example 2
(1) Cleaning a substrate: the substrate is cleaned, and the specific cleaning operation is as follows: the substrates were each cleaned with SC1 cleaning solution for 10 minutes. Wherein the SC1 cleaning solution is NH 4 OH、H 2 O 2 And water mixture, NH in SC1 cleaning solution 4 OH、H 2 O 2 And the volume ratio of water is 1:1:5. then cleaning the substrate with deionized water; then cleaning the substrate for 10 minutes by using SC2 cleaning liquid, and then cleaning the substrate by using deionized water; wherein the SC2 cleaning solution is HCl,H 2 O 2 And water mixture, HCl, H in SC2 cleaning solution 2 O 2 And the volume ratio of water is 1:1:5, a step of; finally, soaking in BOE for 10 seconds, cleaning with deionized water, and then flushing with nitrogen.
(2) And (3) placing the cleaned substrate on a hot plate for baking, wherein the baking temperature is 120 ℃, and the baking time is 1min.
(3) Spin-coating electron beam resist on the baked substrate to obtain an electron beam resist layer. Wherein the electron beam resist is AR-P6200, and the thickness of the electron beam resist layer is 80nm.
(4) And (3) baking the electron beam resist layer on a hot plate at 150 ℃ for 1min.
(5) The baked electron beam resist layer was exposed in an electron beam exposure apparatus (nanobeam NB 5). Wherein the accelerating voltage in the exposure process is 80KV, the beam current of the electron beam is 1.5nA, and the exposure dose is 2.5C/m 2 。
(6) After the exposure, development is performed with a developer. Wherein, the developing reagent in the developing process is AR600-546, and the developing time is 1.5min. And after the development is finished, drying by a nitrogen gun.
(7) And (3) placing the nano pattern obtained in the step (6) into an SEM for measurement, and obtaining a measurement result.
The average width of the gaps of the nanopatterns in example 2 was about 10nm, the thickness of the nanopatterns was 80nm, but a phenomenon in which small patterns were peeled off from the substrate occurred.
Example 3
(1) Cleaning a substrate: the substrate is cleaned, and the specific cleaning operation is as follows: the substrates were each cleaned with SC1 cleaning solution for 10 minutes. Wherein the SC1 cleaning solution is NH 4 OH、H 2 O 2 And water mixture, NH in SC1 cleaning solution 4 OH、H 2 O 2 And the volume ratio of water is 1:1:5. then cleaning the substrate with deionized water; then cleaning the substrate for 10 minutes by using SC2 cleaning liquid, and then cleaning the substrate by using deionized water; wherein the SC2 cleaning solution is HCl, H 2 O 2 And water mixture, HCl, H in SC2 cleaning solution 2 O 2 And the volume of waterThe ratio is 1:1:5, a step of; finally, soaking in BOE for 10 seconds, cleaning with deionized water, and then flushing with nitrogen.
(2) And (3) placing the cleaned substrate on a hot plate for baking, wherein the baking temperature is 180 ℃, and the baking time is 10min.
(3) Spin-coating electron beam resist on the baked substrate to obtain an electron beam resist layer. Wherein the electron beam resist is AR-P6200, and the thickness of the electron beam resist layer is 50nm.
(4) And (3) baking the electron beam resist layer on a hot plate at 150 ℃ for 1min.
(5) The baked electron beam resist layer was exposed in an electron beam exposure apparatus (nanobeam NB 5). Wherein the accelerating voltage in the exposure process is 80KV, the beam current of the electron beam is 1.5nA, and the exposure dose is 2.5C/m 2 。
(6) After the exposure, development is performed with a developer. Wherein, the developing reagent in the developing process is AR600-546, and the developing time is 1min. And after the development is finished, drying by a nitrogen gun.
(7) And (3) placing the nano pattern obtained in the step (6) into an SEM for measurement, and obtaining a measurement result.
The average width of the gaps of the nanopatterns of example 3 was about 10nm, and the thickness of the nanopatterns was 50nm. Because the electron beam resist layer is thinner, the edge of the graph is easily damaged in the subsequent etching process, and the nanostructure is deformed, so that the embodiment is unfavorable for the subsequent etching and has low practicability.
Example 4
(1) Cleaning a substrate: the substrate is cleaned, and the specific cleaning operation is as follows: the substrates were each cleaned with SC1 cleaning solution for 10 minutes. Wherein the SC1 cleaning solution is NH 4 OH、H 2 O 2 And water mixture, NH in SC1 cleaning solution 4 OH、H 2 O 2 And the volume ratio of water is 1:1:5. then cleaning the substrate with deionized water; then cleaning the substrate for 10 minutes by using SC2 cleaning liquid, and then cleaning the substrate by using deionized water; wherein the SC2 cleaning solution is HCl, H 2 O 2 And water mixture, HCl, H in SC2 cleaning solution 2 O 2 And the volume ratio of water is 1:1:5, a step of; finally, soaking in BOE for 10 seconds, cleaning with deionized water, and then flushing with nitrogen.
(2) And (3) placing the cleaned substrate on a hot plate for baking, wherein the baking temperature is 180 ℃, and the baking time is 10min.
(3) Spin-coating electron beam resist on the baked substrate to obtain an electron beam resist layer. Wherein the electron beam resist is AR-P6200, and the thickness of the electron beam resist layer is 110nm.
(4) And (3) baking the electron beam resist layer on a hot plate at 150 ℃ for 1min.
(5) The baked electron beam resist layer was exposed in an electron beam exposure apparatus (nanobeam NB 5). Wherein the accelerating voltage in the exposure process is 80KV, the beam current of the electron beam is 1.5nA, and the exposure dose is 2.5C/m 2 。
(6) After the exposure, development is performed with a developer. Wherein, the developing reagent in the developing process is AR600-546, and the developing time is 1min. And after the development is finished, drying by a nitrogen gun.
(7) And (3) placing the nano pattern obtained in the step (6) into an SEM for measurement, and obtaining a measurement result.
The average width of the gaps of the nanopatterns of example 4 was about 30nm, and the thickness of the nanopatterns was 110nm.
TABLE 1
Comparative example 1
(1) Cleaning a substrate: the substrate is cleaned, and the specific cleaning operation is as follows: the substrates were each cleaned with SC1 cleaning solution for 10 minutes. Wherein the SC1 cleaning solution is NH 4 OH、H 2 O 2 And water mixture, NH in SC1 cleaning solution 4 OH、H 2 O 2 And the volume ratio of water is 1:1:5. then cleaning the substrate with deionized water; then cleaning the substrate for 10 minutes by using SC2 cleaning liquid, and then cleaning the substrate by using deionized water; wherein the SC2 cleaning solution is HCl, H 2 O 2 And water mixture, HCl, H in SC2 cleaning solution 2 O 2 And the volume ratio of water is 1:1:5, a step of; finally, soaking in BOE for 10 seconds, cleaning with deionized water, and then flushing with nitrogen.
(2) And (3) placing the cleaned substrate on a hot plate for baking, wherein the baking temperature is 180 ℃, and the baking time is 10min.
(3) Spin-coating electron beam resist on the baked substrate to obtain an electron beam resist layer. Wherein the electron beam resist is AR-P6200, and the thickness of the electron beam resist layer is 110nm.
(4) And (3) baking the electron beam resist layer on a hot plate at 150 ℃ for 1min.
(5) The baked electron beam resist layer was exposed in an electron beam exposure apparatus (nanobeam NB 5). Wherein the accelerating voltage in the exposure process is 80KV, the beam current of the electron beam is 9nA, and the exposure dose is 3.3C/m 2 。
(6) After the exposure, development is performed with a developer. Wherein, the developing reagent in the developing process is AR600-546, and the developing time is 1min. After the development is completed, the nano pattern of comparative example 1 is obtained by blow-drying with a nitrogen gun.
(7) And (3) placing the nano pattern obtained in the step (6) into an SEM for measurement, and obtaining a measurement result.
The measurement result of comparative example 1 is shown in FIG. 2, in which the width of the gap at 1' in FIG. 2 is 66.99nm and the thickness of the nanopattern is 110nm. .
Comparative example 2
(1) Cleaning a substrate: the substrate is cleaned, and the specific cleaning operation is as follows: the substrates were each cleaned with SC1 cleaning solution for 10 minutes. Wherein the SC1 cleaning solution is NH 4 OH、H 2 O 2 And water mixture, NH in SC1 cleaning solution 4 OH、H 2 O 2 And the volume ratio of water is 1:1:5. then cleaning the substrate with deionized water; then cleaning the substrate for 10 minutes by using SC2 cleaning liquid, and then cleaning the substrate by using deionized water; wherein the SC2 cleaning solution is HCl, H 2 O 2 And water mixture, HCl, H in SC2 cleaning solution 2 O 2 And the volume ratio of water is 1:1:5, a step of; finally, soaking in BOE for 10 seconds, cleaning with deionized water, and then flushing with nitrogen.
(2) And (3) placing the cleaned substrate on a hot plate for baking, wherein the baking temperature is 180 ℃, and the baking time is 10min.
(3) Spin-coating electron beam resist on the baked substrate to obtain an electron beam resist layer. Wherein the electron beam resist is AR-P6200, and the thickness of the electron beam resist layer is 80nm.
(4) And (3) baking the electron beam resist layer on a hot plate at 150 ℃ for 1min.
(5) The baked electron beam resist layer was exposed in an electron beam exposure apparatus (nanobeam NB 5). Wherein the accelerating voltage in the exposure process is 80KV, the beam current of the electron beam is 1.5nA, and the exposure dose is 2.5C/m 2 。
(6) Baking (i.e. post-baking) the exposed electron beam resist layer at 150 ℃ for 1min.
(7) And developing the electron beam resist layer after post-baking. Wherein, the developing reagent in the developing process is AR600-546, and the developing time is 2min. After the development is finished, the nano pattern of comparative example 2 is obtained by blow-drying with a nitrogen gun.
(8) And (3) placing the nano pattern obtained in the step (7) into an SEM for measurement, and obtaining a measurement result.
The average width of the gaps of the nanopatterns of comparative example 2 was about 20nm, and the thickness of the nanopatterns was 80nm.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (2)
1. A method for preparing a nanopattern having a width or gap of 10nm or less, comprising the steps of:
(1) Cleaning a substrate: cleaning the substrate with SC1 cleaning solution for 10 minutes; wherein the SC1 cleaning solution is NH 4 OH、H 2 O 2 And water mixture, NH in SC1 cleaning solution 4 OH、H 2 O 2 And the volume ratio of water is 1:1:5, a step of; then cleaning the substrate with deionized water; then cleaning the substrate for 10 minutes by using SC2 cleaning liquid, and then cleaning the substrate by using deionized water; wherein the SC2 cleaning solution is HCl, H 2 O 2 And water mixture, HCl, H in SC2 cleaning solution 2 O 2 And the volume ratio of water is 1:1:5, a step of; finally, soaking in BOE for 10 seconds, cleaning with deionized water, and then flushing with nitrogen;
(2) Placing the cleaned substrate on a hot plate for baking at 180 ℃ for 10min;
(3) Spin-coating an electron beam resist on the baked substrate to obtain an electron beam resist layer; wherein the electron beam resist is AR-P6200, and the thickness of the electron beam resist layer is 80nm;
(4) Baking the electron beam resist layer on a hot plate at 150 ℃ for 1min;
(5) The baked electron beam resist layer is placed in a nanobeam NB5 of an electron beam exposure device for exposure; wherein the accelerating voltage in the exposure process is 80KV, the beam current of the electron beam is 1.5nA, and the exposure dose is 2.5C/m 2 ；
(6) After the exposure is finished, developing with a developer; wherein, the developing reagent in the developing process is AR600-546, and the developing time is 1.5min; and after development, drying by a nitrogen gun to obtain the nano pattern.
2. A method of preparing a nanostructure, comprising the steps of:
the nanostructure is obtained by etching with the nanopattern prepared by the method for preparing nanopattern according to claim 1 as a mask.
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