TWI837116B - Method and apparatus for cleaning semiconductor wafer - Google Patents
Method and apparatus for cleaning semiconductor wafer Download PDFInfo
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- TWI837116B TWI837116B TW108107492A TW108107492A TWI837116B TW I837116 B TWI837116 B TW I837116B TW 108107492 A TW108107492 A TW 108107492A TW 108107492 A TW108107492 A TW 108107492A TW I837116 B TWI837116 B TW I837116B
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- 238000004140 cleaning Methods 0.000 title claims abstract description 233
- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000004065 semiconductor Substances 0.000 title claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 173
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 173
- 239000010703 silicon Substances 0.000 claims abstract description 173
- 239000007788 liquid Substances 0.000 claims abstract description 142
- 239000000126 substance Substances 0.000 claims abstract description 94
- 238000005192 partition Methods 0.000 claims abstract description 40
- 230000008569 process Effects 0.000 claims abstract description 28
- 239000012636 effector Substances 0.000 claims abstract description 21
- 235000012431 wafers Nutrition 0.000 claims description 174
- 230000007246 mechanism Effects 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims 2
- 238000007789 sealing Methods 0.000 claims 1
- 239000007921 spray Substances 0.000 description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 235000011149 sulphuric acid Nutrition 0.000 description 3
- 238000012864 cross contamination Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009347 mechanical transmission Effects 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 101000827703 Homo sapiens Polyphosphoinositide phosphatase Proteins 0.000 description 1
- 102100023591 Polyphosphoinositide phosphatase Human genes 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
本發明公開了一種確保矽片從一個清洗槽到其他清洗槽的過程中浸沒在化學液中的裝置和方法。裝置包括內槽;至少一個隔板,將內槽分成至少兩個裝滿化學液的清洗槽;裝配有至少一對末端執行器的第一機械手,用於抓取矽片並將矽片從第一清洗槽傳遞到第二清洗槽;其中,每個清洗槽的底部設有一個用於保持矽片的矽片保持架,隔板設有至少一個插槽;其中,第一機械手抓取矽片並將矽片從第一清洗槽穿過插槽傳遞到第二清洗槽的過程中,保持矽片浸沒在化學液中。 The present invention discloses a device and method for ensuring that a silicon wafer is immersed in a chemical liquid during the process of moving from one cleaning tank to another cleaning tank. The device includes an inner tank; at least one partition, which divides the inner tank into at least two cleaning tanks filled with chemical liquid; a first manipulator equipped with at least one pair of end effectors, which is used to grab a silicon wafer and transfer the silicon wafer from the first cleaning tank to the second cleaning tank; wherein, a silicon wafer holder for holding the silicon wafer is provided at the bottom of each cleaning tank, and the partition is provided with at least one slot; wherein, the first manipulator grabs the silicon wafer and transfers the silicon wafer from the first cleaning tank through the slot to the second cleaning tank, and keeps the silicon wafer immersed in the chemical liquid.
Description
本發明關於半導體器件製造領域,尤其關於清洗半導體矽片的方法和裝置。 The present invention relates to the field of semiconductor device manufacturing, and in particular to a method and device for cleaning semiconductor silicon wafers.
在積體電路製造工藝中,濕法清洗工藝對獲得高品質的積體電路至關重要。在乾法蝕刻工藝後,矽片需要被清洗以去除殘留的光刻膠、乾法蝕刻工藝中產生的有機物以及吸附在矽片表面的薄膜材料。用於清洗矽片的化學液主要包括SC1、BOE和由H2SO4和H2O2混合而成的SPM。其中,SPM的溫度高於90℃且SPM用於去除殘留的光刻膠和有機物。通常,清洗矽片的方式有兩種,一種是批量清洗,另一種是單片清洗。下面將會對這兩種清洗方式進行比較。 In the integrated circuit manufacturing process, the wet cleaning process is crucial to obtain high-quality integrated circuits. After the dry etching process, the silicon wafer needs to be cleaned to remove residual photoresist, organic matter generated in the dry etching process, and thin film materials adsorbed on the surface of the silicon wafer. The chemical liquids used to clean silicon wafers mainly include SC1, BOE , and SPM mixed with H2SO4 and H2O2 . Among them, the temperature of SPM is higher than 90℃ and SPM is used to remove residual photoresist and organic matter. Generally, there are two ways to clean silicon wafers, one is batch cleaning and the other is single wafer cleaning. The two cleaning methods will be compared below.
批量清洗可以每次清洗多片矽片。批量清洗的裝置包括機械傳動設備和多個清洗槽。一個清洗槽可以同時清洗多片矽片,所以批量清洗的效率高,大約每小時可以清洗四百片矽片。此外,由於清洗槽內的化學液是循環的,因此,化學液可以重複使用,並且降低了批量清洗的成本,特別是高溫化學液,例如120℃的SPM,因為高溫SPM非常難 以混合和控制濃度和溫度。使用批量清洗能夠降低清洗成本,然而,隨著積體電路線寬的不斷縮小,批量清洗的缺點明顯暴露出來。在批量清洗工藝中,矽片需要從一個清洗槽拿到另一個清洗槽。此時,如果清洗槽內的化學液有一些微小雜質,如有機殘留物、有機污染物、顆粒,微小雜質將隨著化學液粘附在矽片表面,一旦矽片被乾燥或被暴露在任何氣相環境中,矽片上的微小雜質就非常難去除。 Batch cleaning can clean multiple silicon wafers at a time. The batch cleaning device includes mechanical transmission equipment and multiple cleaning tanks. One cleaning tank can clean multiple silicon wafers at the same time, so the efficiency of batch cleaning is high, and about 400 silicon wafers can be cleaned per hour. In addition, since the chemical liquid in the cleaning tank is circulated, the chemical liquid can be reused and the cost of batch cleaning is reduced, especially high-temperature chemical liquid, such as 120℃ SPM, because high-temperature SPM is very difficult to mix and control concentration and temperature. Using batch cleaning can reduce cleaning costs, however, with the continuous reduction of integrated circuit line width, the disadvantages of batch cleaning are clearly exposed. In the batch cleaning process, silicon wafers need to be taken from one cleaning tank to another. At this time, if the chemical liquid in the cleaning tank contains some tiny impurities, such as organic residues, organic pollutants, and particles, the tiny impurities will adhere to the surface of the silicon wafer along with the chemical liquid. Once the silicon wafer is dried or exposed to any gas phase environment, the tiny impurities on the silicon wafer will be very difficult to remove.
單片晶圓清洗每次只能清洗一片矽片,單片晶圓清洗裝置包括機械傳動設備和多個獨立的單片晶圓清洗模組,一片矽片的清洗和乾燥工藝在一個單片晶圓清洗模組中完成。在清洗完一片矽片後,單片矽片清洗模組中的化學液被排出且供應新的化學液以清洗另一片矽片,避免交叉污染。單片矽片清洗可以有效去除顆粒和薄膜材料,然而,由於高溫化學液很難回收,單片矽片清洗在使用高溫化學液時具有局限性,例如溫度高於90℃的SPM。 Single wafer cleaning can only clean one silicon wafer at a time. The single wafer cleaning device includes mechanical transmission equipment and multiple independent single wafer cleaning modules. The cleaning and drying process of a silicon wafer is completed in a single wafer cleaning module. After cleaning a silicon wafer, the chemical liquid in the single wafer cleaning module is discharged and new chemical liquid is supplied to clean another silicon wafer to avoid cross contamination. Single wafer cleaning can effectively remove particles and thin film materials. However, since high-temperature chemical liquids are difficult to recycle, single wafer cleaning has limitations when using high-temperature chemical liquids, such as SPMs with temperatures above 90°C.
批量清洗和單片矽片清洗都有他們各自的優點與缺點,因此,發明一種結合了批量清洗和單片矽片清洗的優點的新的裝置和方法將為積體電路製造工藝做出巨大貢獻。 Batch cleaning and single silicon wafer cleaning have their own advantages and disadvantages. Therefore, the invention of a new device and method that combines the advantages of batch cleaning and single silicon wafer cleaning will make a great contribution to the integrated circuit manufacturing process.
因此,本發明提供了一種裝置和方法,確保矽片從一個清洗槽到其他清洗槽的過程中,矽片是浸沒在化學液中。 Therefore, the present invention provides a device and method to ensure that the silicon wafer is immersed in a chemical liquid during the process of moving from one cleaning tank to another cleaning tank.
根據本發明的一個實施例,該裝置包括一個內槽;至少一個隔板,將內槽分成兩個裝滿化學液的清洗槽;裝配有至少一對末端執行器的第一機械手,用於抓取矽片並將矽片從第一清洗槽傳遞到第二清洗槽;其中,每個清洗槽的底部設有一個用於保持矽片的矽片保持架,隔板設有至少一個插槽;其中,第一機械手抓取矽片並將矽片從第一清洗槽穿過插槽傳遞到第二清洗槽的過程中,保持矽片浸沒在化學液中。 According to an embodiment of the present invention, the device includes an inner tank; at least one partition, which divides the inner tank into two cleaning tanks filled with chemical liquid; a first manipulator equipped with at least one pair of end effectors, which is used to grab a silicon wafer and transfer the silicon wafer from the first cleaning tank to the second cleaning tank; wherein, a silicon wafer holder for holding the silicon wafer is provided at the bottom of each cleaning tank, and the partition is provided with at least one slot; wherein, during the process of the first manipulator grabbing the silicon wafer and transferring the silicon wafer from the first cleaning tank through the slot to the second cleaning tank, the silicon wafer is kept immersed in the chemical liquid.
根據本發明的一個實施例,一種清洗半導體矽片的方法包括以下步驟:將至少一片矽片放置在裝滿化學液的第一清洗槽內的矽片保持架上;所述矽片在第一清洗槽內處理完後,將所述矽片從第一清洗槽傳遞到第二清洗槽,所述矽片在傳遞過程中浸沒在化學液中;以及所述矽片在第二清洗槽內處理完後,將所述矽片從第二清洗槽取出。 According to an embodiment of the present invention, a method for cleaning semiconductor silicon wafers includes the following steps: placing at least one silicon wafer on a silicon wafer holder in a first cleaning tank filled with chemical liquid; after the silicon wafer is processed in the first cleaning tank, transferring the silicon wafer from the first cleaning tank to a second cleaning tank, wherein the silicon wafer is immersed in the chemical liquid during the transfer process; and after the silicon wafer is processed in the second cleaning tank, taking the silicon wafer out of the second cleaning tank.
本發明利用隔板上的多個插槽傳遞矽片,確保矽片從第一個清洗槽到另一個清洗槽的過程中浸沒在化學液中。 The present invention utilizes multiple slots on the partition to transfer the silicon wafer, ensuring that the silicon wafer is immersed in the chemical liquid during the process from the first cleaning tank to another cleaning tank.
1001‧‧‧內槽 1001‧‧‧Inner tank
1002‧‧‧隔板 1002‧‧‧Partition
1003‧‧‧矽片保持架 1003‧‧‧Silicon wafer holder
1004‧‧‧插槽 1004‧‧‧Slot
1005‧‧‧第一機械手 1005‧‧‧The First Robot
1006‧‧‧外槽 1006‧‧‧External tank
1011‧‧‧第一清洗槽 1011‧‧‧First cleaning tank
1012‧‧‧第二清洗槽 1012‧‧‧Second cleaning tank
1013‧‧‧進口 1013‧‧‧Import
1042‧‧‧液體通道 1042‧‧‧Liquid channel
1051‧‧‧末端執行器 1051‧‧‧End Executor
1061‧‧‧感測器 1061‧‧‧Sensor
1062‧‧‧排液口 1062‧‧‧Drain port
1071‧‧‧第一進液口 1071‧‧‧First liquid inlet
1072‧‧‧第一出液口 1072‧‧‧First liquid outlet
1073‧‧‧第一泵 1073‧‧‧First pump
1074‧‧‧第一過濾器 1074‧‧‧First filter
1081‧‧‧第二進液口 1081‧‧‧Second liquid inlet
1082‧‧‧第二出液口 1082‧‧‧Second liquid outlet
1083‧‧‧第二泵 1083‧‧‧Second pump
1084‧‧‧第二過濾器 1084‧‧‧Second filter
1085‧‧‧閥門 1085‧‧‧Valve
2004‧‧‧插槽 2004‧‧‧Slots
2041‧‧‧噴頭 2041‧‧‧Spray head
2042‧‧‧液體通道 2042‧‧‧Liquid channel
2043‧‧‧插槽門 2043‧‧‧Slot door
3002‧‧‧隔板 3002‧‧‧Partition
3004‧‧‧插槽 3004‧‧‧Slot
3041‧‧‧噴頭 3041‧‧‧Spray head
3042‧‧‧液體通道 3042‧‧‧Liquid channel
3043‧‧‧插槽門 3043‧‧‧Slot door
3044‧‧‧開口 3044‧‧‧Opening
4004‧‧‧插槽 4004‧‧‧Slot
4051‧‧‧末端執行器 4051‧‧‧End executor
4052‧‧‧驅動設備 4052‧‧‧Drive equipment
5003‧‧‧矽片保持架 5003‧‧‧Silicon wafer holder
5005‧‧‧第一機械手 5005‧‧‧The First Robot
5008‧‧‧第二機械手 5008‧‧‧Second robot
5009‧‧‧外部清洗槽 5009‧‧‧External cleaning tank
5091‧‧‧噴嘴 5091‧‧‧Spray nozzle
5092‧‧‧排放口 5092‧‧‧Discharge port
6006‧‧‧外槽 6006‧‧‧External tank
6101‧‧‧汽缸 6101‧‧‧Cylinder
6110‧‧‧蓋板 6110‧‧‧Cover plate
6111‧‧‧棍狀物 6111‧‧‧stick-shaped object
6112‧‧‧轉動機構 6112‧‧‧Rotating mechanism
6121‧‧‧磁性部件 6121‧‧‧Magnetic components
6122‧‧‧隔牆 6122‧‧‧Partition wall
7001‧‧‧內槽 7001‧‧‧Inner tank
7002‧‧‧隔板 7002‧‧‧Partition
7003‧‧‧矽片保持架 7003‧‧‧Silicon wafer holder
7004‧‧‧插槽 7004‧‧‧Slot
7005‧‧‧機械手 7005‧‧‧Robot
7051‧‧‧末端執行器 7051‧‧‧End executor
8011‧‧‧第一清洗槽 8011‧‧‧First cleaning tank
8012‧‧‧第二清洗槽 8012‧‧‧Second cleaning tank
9011‧‧‧第一清洗槽 9011‧‧‧First cleaning tank
9012‧‧‧第二清洗槽 9012‧‧‧Second cleaning tank
9013‧‧‧第三清洗槽 9013‧‧‧Third cleaning tank
圖1A-1C為清洗半導體矽片的裝置的實施例在矽片傳遞過程中的截面圖;圖2A為具有一個插槽的隔板的一種實施例的截面圖;圖2B為在門打開狀態下具有一個插槽的隔板的一種實施例;圖2C為在門關閉狀態下具有一個插槽的隔板的一種實施例;圖3A為具有多個插槽的隔板的另一種實施例的截面圖;圖3B為在門打開狀態下具有多個插槽的隔板的另一種實施例;圖3C為在門關閉狀態下具有多個插槽的隔板的另一種實施例;圖4A為具有豎直插槽的隔板和與插槽相配的機械手的側視圖;圖4B為具有水平插槽的隔板和與插槽相配的機械手的側視圖;圖4C為具有與水平方向有一定角度的插槽的隔板和與插槽相配的機械手的側視圖;圖5為具有外部清洗槽的裝置的實施例的截面圖;圖6A為清洗半導體矽片的裝置的實施例在清洗過程中的截面圖;圖6B為清洗半導體矽片的裝置的實施例的磁驅動結構在清洗過程中的側視圖; 圖7為根據本發明的清洗半導體矽片的裝置的另一種實施例的截面圖;圖8A-8F為清洗半導體矽片的方法的一種實施例;圖9A-9C為清洗半導體矽片的方法的另一種實施例。 Figures 1A-1C are cross-sectional views of an embodiment of an apparatus for cleaning semiconductor silicon wafers during a silicon wafer transfer process; Figure 2A is a cross-sectional view of an embodiment of a partition having a slot; Figure 2B is an embodiment of a partition having a slot with a door open; Figure 2C is an embodiment of a partition having a slot with a door closed; Figure 3A is a cross-sectional view of another embodiment of a partition having multiple slots; Figure 3B is another embodiment of a partition having multiple slots with a door open; Figure 3C is another embodiment of a partition having multiple slots with a door closed; Figure 4A is a side view of a partition having vertical slots and a robot arm matching the slots; Figure 4B is a side view of a partition having vertical slots and a robot arm matching the slots. FIG4 is a side view of a partition with a horizontal slot and a manipulator matched with the slot; FIG4C is a side view of a partition with a slot at a certain angle to the horizontal direction and a manipulator matched with the slot; FIG5 is a cross-sectional view of an embodiment of a device with an external cleaning tank; FIG6A is a cross-sectional view of an embodiment of a device for cleaning semiconductor silicon wafers during the cleaning process; FIG6B is a side view of a magnetic drive structure of an embodiment of a device for cleaning semiconductor silicon wafers during the cleaning process; FIG7 is a cross-sectional view of another embodiment of a device for cleaning semiconductor silicon wafers according to the present invention; FIG8A-8F are an embodiment of a method for cleaning semiconductor silicon wafers; FIG9A-9C are another embodiment of a method for cleaning semiconductor silicon wafers.
下面結合附圖對本發明的具體實施方式做詳細的說明,以下所述實施例只是用來說明本發明,而不是用來限制本發明。 The specific implementation of the present invention is described in detail below with reference to the attached drawings. The following embodiments are only used to illustrate the present invention, not to limit the present invention.
圖1A為根據本發明的清洗半導體矽片的裝置的一個實施例的截面圖。該清洗半導體矽片的裝置包括一個內槽1001;至少一個隔板1002,將內槽1001分成兩個裝滿化學液的清洗槽;裝配有至少一對末端執行器1051的第一機械手1005,用於抓取矽片並將矽片從第一清洗槽1011傳遞到第二清洗槽1012;其中,每個清洗槽的底部設有一個用於保持矽片的矽片保持架1003,隔板1002設有至少一個插槽1004;其中,第一機械手1005抓取矽片並將矽片從第一清洗槽1011穿過插槽1004傳遞到第二清洗槽1012,在此過程中,保持矽片浸沒在化學液中。矽片保持架1003能夠前後移動。
FIG. 1A is a cross-sectional view of an embodiment of an apparatus for cleaning semiconductor wafers according to the present invention. The device for cleaning semiconductor silicon wafers includes an
清洗槽內的化學液為高溫SPM,SPM的溫度在80℃-250℃。不同清洗槽內的化學液溫度相同或不同。SPM為H2SO4和H2O2的混合物,且H2O2和H2SO4的比例為1:1至1:100。不同清洗槽內的化學液濃度相同或不同。 The chemical liquid in the cleaning tank is high temperature SPM, and the temperature of SPM is 80℃-250℃. The temperature of the chemical liquid in different cleaning tanks is the same or different. SPM is a mixture of H2SO4 and H2O2 , and the ratio of H2O2 to H2SO4 is 1: 1 to 1: 100 . The concentration of the chemical liquid in different cleaning tanks is the same or different.
為了避免第一清洗槽1011內的髒化學液流向第二清洗槽1012,兩個清洗槽有液位差,即第一清洗槽1011的液面高度低於第二清洗槽1012的液面高度。由於第一清洗槽1011和第二清洗槽1012之間存在液位差,第二清洗槽1012內的化學液壓P2高於第一清洗槽1011內的化學液壓P1,第一清洗槽1011和第二清洗槽1012之間形成壓差△P=P2-P1>0,P2>P1。由於壓差△P,第二清洗槽1012內的化學液將流向第一清洗槽1011。第二清洗槽1012設有一個用於向第二清洗槽1012供新鮮化學液的進口1013,以保持兩個清洗槽之間存在液位差。
In order to prevent the dirty chemical liquid in the
該裝置還包括一個外槽1006。每個清洗槽通過循環系統分別和外槽1006連接。與第一清洗槽1011相連接的循環系統包括第一進液口1071、第一出液口1072、第一泵1073和第一過濾器1074。第一進液口1071位於第一清洗槽1011的底部,第一出液口1072位於外槽1006的底部。與第二清洗槽1012相連接的循環系統包括第二進液口1081、第二出液口1082、第二泵1083、第二過濾器1084和閥門1085。第二進液口1081位於第二清洗槽1012的底部,第二出液口1082位於外槽1006的底部,閥門1085與隔板1002內的液體通道1042相連接,用於控制化學液的供給。在清洗過程中,第一清洗槽1011內的化學液變得越來越髒,第一清洗槽1011內的髒化學液溢出流到外槽1006,外槽1006內的髒化學液通過第一出液口1072流入循環系統,循環系統通過第一過濾器1074淨化髒化學液,乾淨的
化學液將通過第一進液口1071重新回到第一清洗槽1011內。通過這種方式,清洗槽內的化學液始終保持乾淨。進一步,隔板1002的高度不低於清洗槽的高度,以避免兩個清洗槽之間交叉污染。
The device further includes an
外槽1006還包括感測器1061和位於感測器1061下方的排液口1062。感測器1061用於檢測外槽1006內的化學液的液位。進口1013不斷地向第二清洗槽1012供應新鮮化學液,第二清洗槽1012內的化學液流向第一清洗槽1011,接著第一清洗槽1011內的化學液溢出到外槽1006。當感測器1061檢測到液位上升到設定的高度時,排液口1062將被打開並排出化學液直到液位低於設定的高度。
The
圖1A-1C描述了第一機械手1005的工作過程。在清洗工藝完成後,將第一機械手1005放置到兩個相鄰的清洗槽,每對末端執行器1051穿過兩個相鄰的清洗槽。多對末端執行器1051同時抓取矽片,第一機械手1005將矽片拉升到特定高度,接著矽片隨第一機械手1005一起水平移動,使矽片從第一清洗槽1011穿過隔板1002上的插槽1004到達第二清洗槽1012。第一機械手1005使矽片下降並將矽片放置在第二清洗槽1012內的矽片保持架1003上。
Figures 1A-1C describe the working process of the
具有插槽1004的隔板1002防止矽片從一個清洗槽到另一個清洗槽的傳遞過程中暴露在非液相環境中,但是第一清洗槽1011內的髒化學液會通過插槽1004流向第二清洗槽1012。圖2A為具有一個插槽2004的隔板1002的一
種實施例的截面圖。插槽2004至少有一面側壁上設有一排噴頭2041,噴頭2041噴出的化學液由第二清洗槽提供,具體地,從循環系統通過液體通道2042向噴頭2041供應化學液,且循環系統的閥保持開啟。當矽片穿過插槽2004時,噴頭2041向矽片的兩面噴灑新鮮化學液。此外,噴頭2041噴出的化學液形成液簾擋住插槽2004,液簾能夠阻止髒化學液通過插槽2004流向乾淨化學液。兩個清洗槽之間的壓差也能有利於減少髒化學液從第一清洗槽1011流向第二清洗槽1012。為了進一步擋住插槽2004以避免髒化學液流向乾淨化學液,該裝置還包括插槽門2043,如圖2B和圖2C。插槽門2043由驅動設備驅動以密封或打開插槽2004。當矽片被處理完畢後,打開插槽門2043,然後噴頭2041噴灑化學液並一個接一個的傳遞矽片。其他情況下,關閉插槽門2043。
The
圖3A為具有多個插槽3004的隔板3002的另一種實施例的截面圖。每個插槽3004的側壁設有一排噴頭3041,從循環系統通過液體通道3042向噴頭3041供應化學液,且循環系統的閥保持開啟。當矽片穿過插槽3004時,噴頭3041向矽片的兩面噴灑新鮮化學液。此外,噴頭3041噴出的化學液形成液簾擋住插槽3004,液簾能夠阻止髒化學液通過插槽3004流向乾淨化學液。兩個清洗槽之間的壓差也能有利於減少髒化學液從第一清洗槽流向第二清洗槽。為了進一步擋住所有插槽3004以避免髒化學液流向乾淨化學液,該裝置還包括插槽門3043,如圖3B和圖3C。插
槽門3043設有多個開口3044,且開口3044的數量不少於隔板3002上的插槽3004的數量,開口3044的大小不小於隔板3002上的插槽3004的大小。插槽門3043由驅動設備驅動以密封或打開插槽3004。當矽片被處理完畢後,移動插槽門3043直到開口3044與插槽3004重疊,然後噴頭3041噴灑化學液並傳遞矽片。其他情況下,插槽3004與開口3044錯開。
FIG. 3A is a cross-sectional view of another embodiment of a
如果第一機械手裝配有一對末端執行器,那麼矽片一片接一片的傳遞。為了加快傳遞效率,末端執行器的對數與矽片的數量相同,即所有矽片可以一次傳遞。較佳者,末端執行器的對數為5到25對。第一機械手的形狀像一個耙子,如圖4A-4C。第一機械手包括用於驅動第一機械手上升下降的驅動設備4052。第一機械手用來抓取矽片並將矽片從第一清洗槽傳遞到第二清洗槽。第一機械手的形狀有利於每對末端執行器4051穿過插槽,因此,末端執行器4051的對數不能多於插槽的數量。圖4A-4C為具有不同方向插槽的隔板和與插槽相配的機械手的側視圖。圖4A所示插槽4004為豎直的,且末端執行器4051的方向也是豎直的。末端執行器4051的數量為5對,且插槽4004的數量是5個。在這種情況下,矽片豎直放置在矽片保持架上,進液口位於清洗槽的底部。圖4B所示插槽4004為水平的,且末端執行器4051的方向也是水平的。末端執行器4051的數量為5對,且插槽4004的數量是5個。在這種情況下,矽片水平放置在矽片保持架上,進液口位於清洗槽的側壁。圖4C所
示插槽4004為與水平方向呈一定角度,且末端執行器4051的方向與插槽4004相同。末端執行器4051的數量為5對,且插槽4004的數量是5個。在這種情況下,矽片放置在矽片保持架上且與水平方向呈一定角度,矽片與水平方向的角度與插槽4004與水平方向的角度相同,進液口與水平方向呈一定角度。
If the first manipulator is equipped with a pair of end effectors, then the silicon wafers are delivered one by one. In order to speed up the delivery efficiency, the number of pairs of end effectors is the same as the number of silicon wafers, that is, all silicon wafers can be delivered at one time. Preferably, the number of pairs of end effectors is 5 to 25 pairs. The shape of the first manipulator is like a rake, as shown in Figures 4A-4C. The first manipulator includes a
考慮到第一機械手只能將矽片提升到一定高度,該裝置還包括用於裝載和卸載矽片的第二機械手5008。圖5為具有外部清洗槽的裝置的實施例的截面圖。在清洗工藝開始前,使用第二機械手5008將矽片放置在清洗槽內的矽片保持架5003上。在整個清洗工藝完成後,使用第二機械手5008將矽片從清洗槽中取出。第二機械手5008在非工作狀態下放置在外部清洗槽5009內。外部清洗槽5009的側壁設有多個噴嘴5091噴灑去離子水或新鮮化學液以沖洗第二機械手5008。外部清洗槽的5009的底部設有排放口5092,用於排出髒化學液。外部清洗槽5009還可以用於清洗第一機械手5005。
Considering that the first manipulator can only lift the silicon wafer to a certain height, the device also includes a
圖6A為清洗矽片的裝置的實施例在清洗過程中的截面圖。每個清洗槽設有蓋板6110,避免在清洗過程中化學液洩露或化學蒸汽彌漫到裝置的其他區域。蓋板6110設有一個汽缸6101,用於驅動蓋板6110上下移動。由於液體從進液口噴出並流出清洗槽,液體循環流動會引起矽片保持架上的矽片振動,振動導致矽片在矽片保持架上上下彈跳,從而導致矽片和矽片保持架之間的接觸點處出現缺
陷。為了解決這個問題,矽片用三根棍狀物6111鎖住,三根棍狀物6111中的一根與蓋板6110連接,因此與蓋板6110相連接的棍狀物6111向下壓住矽片從而把矽片固定在矽片保持架上。另外兩根棍狀物6111位於矽片保持架上,在水平方向上鎖定矽片。在清洗過程中,矽片和兩根棍狀物的接觸點會產生相對運動而導致缺陷。為了減少這種缺陷,與蓋板6110相連接的棍狀物6111作為轉動滾輪由轉動機構6112驅動轉動,其他棍狀物作為從動滾輪轉動,進而帶動矽片一起轉動,如圖6A。轉動機構6112設有磁性部件6121,磁性部件6121由磁性材料製成。磁性部件6121插入外槽6006,磁性部件6121的四周設有多個隔牆6122以形成特定的空間,避免化學液接觸磁性部件6121。與蓋板6110相連接的棍狀物6111靠近磁性部件6121的一端由磁性材料製成,與蓋板6110相連接的棍狀物6111和磁性部件6121使用具有相同特性的磁性材料。轉動磁性部件6121以驅動棍狀物6111轉動,通過棍狀物6111的轉動帶動矽片轉動。
FIG6A is a cross-sectional view of an embodiment of a device for cleaning silicon wafers during a cleaning process. Each cleaning tank is provided with a
圖7為根據本發明的清洗半導體矽片的裝置的另一種實施例的截面圖。清洗半導體矽片的裝置包括具有隔板7002的內槽7001,隔板7002將內槽7001分成兩個裝滿化學液的清洗槽;設於每個清洗槽底部的矽片保持架7003,用於保持矽片;隔板7002設有至少一個插槽7004;裝配有至少一對末端執行器7051的機械手7005,用於抓取至少一片矽片從第一清洗槽穿過插槽7004傳遞到第二清洗
槽,且保持矽片浸沒在化學液中。插槽7004穿透隔板7002的上部,使機械手7005可以裝載和卸載矽片。
FIG7 is a cross-sectional view of another embodiment of the device for cleaning semiconductor silicon wafers according to the present invention. The device for cleaning semiconductor silicon wafers includes an
圖8A-8F為矽片清洗方法的一種實施例。一種矽片清洗方法,包括:將至少一片矽片放置在裝滿化學液的第一清洗槽8011內的矽片保持架上;所述矽片在第一清洗槽8011內處理完成後,將所述矽片從第一清洗槽8011傳遞到第二清洗槽8012,且所述矽片在傳遞過程中浸沒在化學液中;所述矽片在第二清洗槽8012內處理完成後,將所述矽片從第二清洗槽8012取出。
Figures 8A-8F are an embodiment of a silicon wafer cleaning method. A silicon wafer cleaning method includes: placing at least one silicon wafer on a silicon wafer holder in a
如圖8A-8F所示,矽片的傳遞方式為一片接一片的將矽片從第一清洗槽8011傳遞到第二清洗槽8012。在傳遞過程中,在第一清洗槽8011和第二清洗槽8012之間噴灑化學液以形成液簾。
As shown in Figures 8A-8F, the transfer method of the silicon wafers is to transfer the silicon wafers from the
圖9A-9C為矽片清洗方法的另一種實施例。一種矽片清洗方法,包括:將至少一片矽片放置在裝滿化學液的第一清洗槽9011內的矽片保持架上;所述矽片在第一清洗槽9011內處理完成後,將所述矽片從第一清洗槽9011傳遞到第三清洗槽9013;所述矽片在第三清洗槽9013內處理完成後,將所述矽片從第三清洗槽9013傳遞到第二清洗槽9012,且所述矽片在傳遞過程中浸沒在化學液中;
所述矽片在第二清洗槽9012內處理完成後,將所述矽片從第二清洗槽9012取出。
Figures 9A-9C are another embodiment of a silicon wafer cleaning method. A silicon wafer cleaning method includes: placing at least one silicon wafer on a silicon wafer holder in a
如圖9A-9C所示,矽片的傳遞方式為一次將所有矽片從一個清洗槽傳遞到另一個清洗槽。在矽片的傳遞過程中,在每兩個清洗槽之間噴灑化學液以形成液簾。 As shown in Figures 9A-9C, the transfer method of the silicon wafers is to transfer all the silicon wafers from one cleaning tank to another cleaning tank at a time. During the transfer process of the silicon wafers, chemical liquid is sprayed between every two cleaning tanks to form a liquid curtain.
1001‧‧‧內槽 1001‧‧‧Inner tank
1002‧‧‧隔板 1002‧‧‧Partition
1003‧‧‧矽片保持架 1003‧‧‧Silicon wafer holder
1004‧‧‧插槽 1004‧‧‧Slot
1005‧‧‧第一機械手 1005‧‧‧The First Robot
1006‧‧‧外槽 1006‧‧‧External tank
1011‧‧‧第一清洗槽 1011‧‧‧First cleaning tank
1012‧‧‧第二清洗槽 1012‧‧‧Second cleaning tank
1013‧‧‧進口 1013‧‧‧Import
1051‧‧‧末端執行器 1051‧‧‧End Executor
1061‧‧‧感測器 1061‧‧‧Sensor
1062‧‧‧排液口 1062‧‧‧Drain port
1071‧‧‧第一進液口 1071‧‧‧First liquid inlet
1072‧‧‧第一出液口 1072‧‧‧First liquid outlet
1073‧‧‧第一泵 1073‧‧‧First pump
1074‧‧‧第一過濾器 1074‧‧‧First filter
1081‧‧‧第二進液口 1081‧‧‧Second liquid inlet
1082‧‧‧第二出液口 1082‧‧‧Second liquid outlet
1083‧‧‧第二泵 1083‧‧‧Second pump
1084‧‧‧第二過濾器 1084‧‧‧Second filter
1085‧‧‧閥門 1085‧‧‧Valve
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