TWI837116B - Method and apparatus for cleaning semiconductor wafer - Google Patents

Method and apparatus for cleaning semiconductor wafer Download PDF

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TWI837116B
TWI837116B TW108107492A TW108107492A TWI837116B TW I837116 B TWI837116 B TW I837116B TW 108107492 A TW108107492 A TW 108107492A TW 108107492 A TW108107492 A TW 108107492A TW I837116 B TWI837116 B TW I837116B
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cleaning tank
silicon wafer
cleaning
chemical liquid
tank
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TW108107492A
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TW202034423A (en
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王暉
王希
陳福平
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大陸商盛美半導體設備(上海)股份有限公司
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本發明公開了一種確保矽片從一個清洗槽到其他清洗槽的過程中浸沒在化學液中的裝置和方法。裝置包括內槽;至少一個隔板,將內槽分成至少兩個裝滿化學液的清洗槽;裝配有至少一對末端執行器的第一機械手,用於抓取矽片並將矽片從第一清洗槽傳遞到第二清洗槽;其中,每個清洗槽的底部設有一個用於保持矽片的矽片保持架,隔板設有至少一個插槽;其中,第一機械手抓取矽片並將矽片從第一清洗槽穿過插槽傳遞到第二清洗槽的過程中,保持矽片浸沒在化學液中。 The present invention discloses a device and method for ensuring that a silicon wafer is immersed in a chemical liquid during the process of moving from one cleaning tank to another cleaning tank. The device includes an inner tank; at least one partition, which divides the inner tank into at least two cleaning tanks filled with chemical liquid; a first manipulator equipped with at least one pair of end effectors, which is used to grab a silicon wafer and transfer the silicon wafer from the first cleaning tank to the second cleaning tank; wherein, a silicon wafer holder for holding the silicon wafer is provided at the bottom of each cleaning tank, and the partition is provided with at least one slot; wherein, the first manipulator grabs the silicon wafer and transfers the silicon wafer from the first cleaning tank through the slot to the second cleaning tank, and keeps the silicon wafer immersed in the chemical liquid.

Description

清洗半導體矽片的方法和裝置 Method and device for cleaning semiconductor silicon wafers

本發明關於半導體器件製造領域,尤其關於清洗半導體矽片的方法和裝置。 The present invention relates to the field of semiconductor device manufacturing, and in particular to a method and device for cleaning semiconductor silicon wafers.

在積體電路製造工藝中,濕法清洗工藝對獲得高品質的積體電路至關重要。在乾法蝕刻工藝後,矽片需要被清洗以去除殘留的光刻膠、乾法蝕刻工藝中產生的有機物以及吸附在矽片表面的薄膜材料。用於清洗矽片的化學液主要包括SC1、BOE和由H2SO4和H2O2混合而成的SPM。其中,SPM的溫度高於90℃且SPM用於去除殘留的光刻膠和有機物。通常,清洗矽片的方式有兩種,一種是批量清洗,另一種是單片清洗。下面將會對這兩種清洗方式進行比較。 In the integrated circuit manufacturing process, the wet cleaning process is crucial to obtain high-quality integrated circuits. After the dry etching process, the silicon wafer needs to be cleaned to remove residual photoresist, organic matter generated in the dry etching process, and thin film materials adsorbed on the surface of the silicon wafer. The chemical liquids used to clean silicon wafers mainly include SC1, BOE , and SPM mixed with H2SO4 and H2O2 . Among them, the temperature of SPM is higher than 90℃ and SPM is used to remove residual photoresist and organic matter. Generally, there are two ways to clean silicon wafers, one is batch cleaning and the other is single wafer cleaning. The two cleaning methods will be compared below.

批量清洗可以每次清洗多片矽片。批量清洗的裝置包括機械傳動設備和多個清洗槽。一個清洗槽可以同時清洗多片矽片,所以批量清洗的效率高,大約每小時可以清洗四百片矽片。此外,由於清洗槽內的化學液是循環的,因此,化學液可以重複使用,並且降低了批量清洗的成本,特別是高溫化學液,例如120℃的SPM,因為高溫SPM非常難 以混合和控制濃度和溫度。使用批量清洗能夠降低清洗成本,然而,隨著積體電路線寬的不斷縮小,批量清洗的缺點明顯暴露出來。在批量清洗工藝中,矽片需要從一個清洗槽拿到另一個清洗槽。此時,如果清洗槽內的化學液有一些微小雜質,如有機殘留物、有機污染物、顆粒,微小雜質將隨著化學液粘附在矽片表面,一旦矽片被乾燥或被暴露在任何氣相環境中,矽片上的微小雜質就非常難去除。 Batch cleaning can clean multiple silicon wafers at a time. The batch cleaning device includes mechanical transmission equipment and multiple cleaning tanks. One cleaning tank can clean multiple silicon wafers at the same time, so the efficiency of batch cleaning is high, and about 400 silicon wafers can be cleaned per hour. In addition, since the chemical liquid in the cleaning tank is circulated, the chemical liquid can be reused and the cost of batch cleaning is reduced, especially high-temperature chemical liquid, such as 120℃ SPM, because high-temperature SPM is very difficult to mix and control concentration and temperature. Using batch cleaning can reduce cleaning costs, however, with the continuous reduction of integrated circuit line width, the disadvantages of batch cleaning are clearly exposed. In the batch cleaning process, silicon wafers need to be taken from one cleaning tank to another. At this time, if the chemical liquid in the cleaning tank contains some tiny impurities, such as organic residues, organic pollutants, and particles, the tiny impurities will adhere to the surface of the silicon wafer along with the chemical liquid. Once the silicon wafer is dried or exposed to any gas phase environment, the tiny impurities on the silicon wafer will be very difficult to remove.

單片晶圓清洗每次只能清洗一片矽片,單片晶圓清洗裝置包括機械傳動設備和多個獨立的單片晶圓清洗模組,一片矽片的清洗和乾燥工藝在一個單片晶圓清洗模組中完成。在清洗完一片矽片後,單片矽片清洗模組中的化學液被排出且供應新的化學液以清洗另一片矽片,避免交叉污染。單片矽片清洗可以有效去除顆粒和薄膜材料,然而,由於高溫化學液很難回收,單片矽片清洗在使用高溫化學液時具有局限性,例如溫度高於90℃的SPM。 Single wafer cleaning can only clean one silicon wafer at a time. The single wafer cleaning device includes mechanical transmission equipment and multiple independent single wafer cleaning modules. The cleaning and drying process of a silicon wafer is completed in a single wafer cleaning module. After cleaning a silicon wafer, the chemical liquid in the single wafer cleaning module is discharged and new chemical liquid is supplied to clean another silicon wafer to avoid cross contamination. Single wafer cleaning can effectively remove particles and thin film materials. However, since high-temperature chemical liquids are difficult to recycle, single wafer cleaning has limitations when using high-temperature chemical liquids, such as SPMs with temperatures above 90°C.

批量清洗和單片矽片清洗都有他們各自的優點與缺點,因此,發明一種結合了批量清洗和單片矽片清洗的優點的新的裝置和方法將為積體電路製造工藝做出巨大貢獻。 Batch cleaning and single silicon wafer cleaning have their own advantages and disadvantages. Therefore, the invention of a new device and method that combines the advantages of batch cleaning and single silicon wafer cleaning will make a great contribution to the integrated circuit manufacturing process.

因此,本發明提供了一種裝置和方法,確保矽片從一個清洗槽到其他清洗槽的過程中,矽片是浸沒在化學液中。 Therefore, the present invention provides a device and method to ensure that the silicon wafer is immersed in a chemical liquid during the process of moving from one cleaning tank to another cleaning tank.

根據本發明的一個實施例,該裝置包括一個內槽;至少一個隔板,將內槽分成兩個裝滿化學液的清洗槽;裝配有至少一對末端執行器的第一機械手,用於抓取矽片並將矽片從第一清洗槽傳遞到第二清洗槽;其中,每個清洗槽的底部設有一個用於保持矽片的矽片保持架,隔板設有至少一個插槽;其中,第一機械手抓取矽片並將矽片從第一清洗槽穿過插槽傳遞到第二清洗槽的過程中,保持矽片浸沒在化學液中。 According to an embodiment of the present invention, the device includes an inner tank; at least one partition, which divides the inner tank into two cleaning tanks filled with chemical liquid; a first manipulator equipped with at least one pair of end effectors, which is used to grab a silicon wafer and transfer the silicon wafer from the first cleaning tank to the second cleaning tank; wherein, a silicon wafer holder for holding the silicon wafer is provided at the bottom of each cleaning tank, and the partition is provided with at least one slot; wherein, during the process of the first manipulator grabbing the silicon wafer and transferring the silicon wafer from the first cleaning tank through the slot to the second cleaning tank, the silicon wafer is kept immersed in the chemical liquid.

根據本發明的一個實施例,一種清洗半導體矽片的方法包括以下步驟:將至少一片矽片放置在裝滿化學液的第一清洗槽內的矽片保持架上;所述矽片在第一清洗槽內處理完後,將所述矽片從第一清洗槽傳遞到第二清洗槽,所述矽片在傳遞過程中浸沒在化學液中;以及所述矽片在第二清洗槽內處理完後,將所述矽片從第二清洗槽取出。 According to an embodiment of the present invention, a method for cleaning semiconductor silicon wafers includes the following steps: placing at least one silicon wafer on a silicon wafer holder in a first cleaning tank filled with chemical liquid; after the silicon wafer is processed in the first cleaning tank, transferring the silicon wafer from the first cleaning tank to a second cleaning tank, wherein the silicon wafer is immersed in the chemical liquid during the transfer process; and after the silicon wafer is processed in the second cleaning tank, taking the silicon wafer out of the second cleaning tank.

本發明利用隔板上的多個插槽傳遞矽片,確保矽片從第一個清洗槽到另一個清洗槽的過程中浸沒在化學液中。 The present invention utilizes multiple slots on the partition to transfer the silicon wafer, ensuring that the silicon wafer is immersed in the chemical liquid during the process from the first cleaning tank to another cleaning tank.

1001‧‧‧內槽 1001‧‧‧Inner tank

1002‧‧‧隔板 1002‧‧‧Partition

1003‧‧‧矽片保持架 1003‧‧‧Silicon wafer holder

1004‧‧‧插槽 1004‧‧‧Slot

1005‧‧‧第一機械手 1005‧‧‧The First Robot

1006‧‧‧外槽 1006‧‧‧External tank

1011‧‧‧第一清洗槽 1011‧‧‧First cleaning tank

1012‧‧‧第二清洗槽 1012‧‧‧Second cleaning tank

1013‧‧‧進口 1013‧‧‧Import

1042‧‧‧液體通道 1042‧‧‧Liquid channel

1051‧‧‧末端執行器 1051‧‧‧End Executor

1061‧‧‧感測器 1061‧‧‧Sensor

1062‧‧‧排液口 1062‧‧‧Drain port

1071‧‧‧第一進液口 1071‧‧‧First liquid inlet

1072‧‧‧第一出液口 1072‧‧‧First liquid outlet

1073‧‧‧第一泵 1073‧‧‧First pump

1074‧‧‧第一過濾器 1074‧‧‧First filter

1081‧‧‧第二進液口 1081‧‧‧Second liquid inlet

1082‧‧‧第二出液口 1082‧‧‧Second liquid outlet

1083‧‧‧第二泵 1083‧‧‧Second pump

1084‧‧‧第二過濾器 1084‧‧‧Second filter

1085‧‧‧閥門 1085‧‧‧Valve

2004‧‧‧插槽 2004‧‧‧Slots

2041‧‧‧噴頭 2041‧‧‧Spray head

2042‧‧‧液體通道 2042‧‧‧Liquid channel

2043‧‧‧插槽門 2043‧‧‧Slot door

3002‧‧‧隔板 3002‧‧‧Partition

3004‧‧‧插槽 3004‧‧‧Slot

3041‧‧‧噴頭 3041‧‧‧Spray head

3042‧‧‧液體通道 3042‧‧‧Liquid channel

3043‧‧‧插槽門 3043‧‧‧Slot door

3044‧‧‧開口 3044‧‧‧Opening

4004‧‧‧插槽 4004‧‧‧Slot

4051‧‧‧末端執行器 4051‧‧‧End executor

4052‧‧‧驅動設備 4052‧‧‧Drive equipment

5003‧‧‧矽片保持架 5003‧‧‧Silicon wafer holder

5005‧‧‧第一機械手 5005‧‧‧The First Robot

5008‧‧‧第二機械手 5008‧‧‧Second robot

5009‧‧‧外部清洗槽 5009‧‧‧External cleaning tank

5091‧‧‧噴嘴 5091‧‧‧Spray nozzle

5092‧‧‧排放口 5092‧‧‧Discharge port

6006‧‧‧外槽 6006‧‧‧External tank

6101‧‧‧汽缸 6101‧‧‧Cylinder

6110‧‧‧蓋板 6110‧‧‧Cover plate

6111‧‧‧棍狀物 6111‧‧‧stick-shaped object

6112‧‧‧轉動機構 6112‧‧‧Rotating mechanism

6121‧‧‧磁性部件 6121‧‧‧Magnetic components

6122‧‧‧隔牆 6122‧‧‧Partition wall

7001‧‧‧內槽 7001‧‧‧Inner tank

7002‧‧‧隔板 7002‧‧‧Partition

7003‧‧‧矽片保持架 7003‧‧‧Silicon wafer holder

7004‧‧‧插槽 7004‧‧‧Slot

7005‧‧‧機械手 7005‧‧‧Robot

7051‧‧‧末端執行器 7051‧‧‧End executor

8011‧‧‧第一清洗槽 8011‧‧‧First cleaning tank

8012‧‧‧第二清洗槽 8012‧‧‧Second cleaning tank

9011‧‧‧第一清洗槽 9011‧‧‧First cleaning tank

9012‧‧‧第二清洗槽 9012‧‧‧Second cleaning tank

9013‧‧‧第三清洗槽 9013‧‧‧Third cleaning tank

圖1A-1C為清洗半導體矽片的裝置的實施例在矽片傳遞過程中的截面圖;圖2A為具有一個插槽的隔板的一種實施例的截面圖;圖2B為在門打開狀態下具有一個插槽的隔板的一種實施例;圖2C為在門關閉狀態下具有一個插槽的隔板的一種實施例;圖3A為具有多個插槽的隔板的另一種實施例的截面圖;圖3B為在門打開狀態下具有多個插槽的隔板的另一種實施例;圖3C為在門關閉狀態下具有多個插槽的隔板的另一種實施例;圖4A為具有豎直插槽的隔板和與插槽相配的機械手的側視圖;圖4B為具有水平插槽的隔板和與插槽相配的機械手的側視圖;圖4C為具有與水平方向有一定角度的插槽的隔板和與插槽相配的機械手的側視圖;圖5為具有外部清洗槽的裝置的實施例的截面圖;圖6A為清洗半導體矽片的裝置的實施例在清洗過程中的截面圖;圖6B為清洗半導體矽片的裝置的實施例的磁驅動結構在清洗過程中的側視圖; 圖7為根據本發明的清洗半導體矽片的裝置的另一種實施例的截面圖;圖8A-8F為清洗半導體矽片的方法的一種實施例;圖9A-9C為清洗半導體矽片的方法的另一種實施例。 Figures 1A-1C are cross-sectional views of an embodiment of an apparatus for cleaning semiconductor silicon wafers during a silicon wafer transfer process; Figure 2A is a cross-sectional view of an embodiment of a partition having a slot; Figure 2B is an embodiment of a partition having a slot with a door open; Figure 2C is an embodiment of a partition having a slot with a door closed; Figure 3A is a cross-sectional view of another embodiment of a partition having multiple slots; Figure 3B is another embodiment of a partition having multiple slots with a door open; Figure 3C is another embodiment of a partition having multiple slots with a door closed; Figure 4A is a side view of a partition having vertical slots and a robot arm matching the slots; Figure 4B is a side view of a partition having vertical slots and a robot arm matching the slots. FIG4 is a side view of a partition with a horizontal slot and a manipulator matched with the slot; FIG4C is a side view of a partition with a slot at a certain angle to the horizontal direction and a manipulator matched with the slot; FIG5 is a cross-sectional view of an embodiment of a device with an external cleaning tank; FIG6A is a cross-sectional view of an embodiment of a device for cleaning semiconductor silicon wafers during the cleaning process; FIG6B is a side view of a magnetic drive structure of an embodiment of a device for cleaning semiconductor silicon wafers during the cleaning process; FIG7 is a cross-sectional view of another embodiment of a device for cleaning semiconductor silicon wafers according to the present invention; FIG8A-8F are an embodiment of a method for cleaning semiconductor silicon wafers; FIG9A-9C are another embodiment of a method for cleaning semiconductor silicon wafers.

下面結合附圖對本發明的具體實施方式做詳細的說明,以下所述實施例只是用來說明本發明,而不是用來限制本發明。 The specific implementation of the present invention is described in detail below with reference to the attached drawings. The following embodiments are only used to illustrate the present invention, not to limit the present invention.

圖1A為根據本發明的清洗半導體矽片的裝置的一個實施例的截面圖。該清洗半導體矽片的裝置包括一個內槽1001;至少一個隔板1002,將內槽1001分成兩個裝滿化學液的清洗槽;裝配有至少一對末端執行器1051的第一機械手1005,用於抓取矽片並將矽片從第一清洗槽1011傳遞到第二清洗槽1012;其中,每個清洗槽的底部設有一個用於保持矽片的矽片保持架1003,隔板1002設有至少一個插槽1004;其中,第一機械手1005抓取矽片並將矽片從第一清洗槽1011穿過插槽1004傳遞到第二清洗槽1012,在此過程中,保持矽片浸沒在化學液中。矽片保持架1003能夠前後移動。 FIG. 1A is a cross-sectional view of an embodiment of an apparatus for cleaning semiconductor wafers according to the present invention. The device for cleaning semiconductor silicon wafers includes an inner tank 1001; at least one partition 1002, which divides the inner tank 1001 into two cleaning tanks filled with chemical liquid; a first manipulator 1005 equipped with at least one pair of end effectors 1051, which is used to grab the silicon wafer and transfer the silicon wafer from the first cleaning tank 1011 to the second cleaning tank 1012; wherein, a silicon wafer holder 1003 for holding the silicon wafer is provided at the bottom of each cleaning tank, and the partition 1002 is provided with at least one slot 1004; wherein, the first manipulator 1005 grabs the silicon wafer and transfers the silicon wafer from the first cleaning tank 1011 through the slot 1004 to the second cleaning tank 1012, and in this process, keeps the silicon wafer immersed in the chemical liquid. The silicon wafer holder 1003 can move forward and backward.

清洗槽內的化學液為高溫SPM,SPM的溫度在80℃-250℃。不同清洗槽內的化學液溫度相同或不同。SPM為H2SO4和H2O2的混合物,且H2O2和H2SO4的比例為1:1至1:100。不同清洗槽內的化學液濃度相同或不同。 The chemical liquid in the cleaning tank is high temperature SPM, and the temperature of SPM is 80℃-250℃. The temperature of the chemical liquid in different cleaning tanks is the same or different. SPM is a mixture of H2SO4 and H2O2 , and the ratio of H2O2 to H2SO4 is 1: 1 to 1: 100 . The concentration of the chemical liquid in different cleaning tanks is the same or different.

為了避免第一清洗槽1011內的髒化學液流向第二清洗槽1012,兩個清洗槽有液位差,即第一清洗槽1011的液面高度低於第二清洗槽1012的液面高度。由於第一清洗槽1011和第二清洗槽1012之間存在液位差,第二清洗槽1012內的化學液壓P2高於第一清洗槽1011內的化學液壓P1,第一清洗槽1011和第二清洗槽1012之間形成壓差△P=P2-P1>0,P2>P1。由於壓差△P,第二清洗槽1012內的化學液將流向第一清洗槽1011。第二清洗槽1012設有一個用於向第二清洗槽1012供新鮮化學液的進口1013,以保持兩個清洗槽之間存在液位差。 In order to prevent the dirty chemical liquid in the first cleaning tank 1011 from flowing to the second cleaning tank 1012, there is a liquid level difference between the two cleaning tanks, that is, the liquid level of the first cleaning tank 1011 is lower than the liquid level of the second cleaning tank 1012. Due to the liquid level difference between the first cleaning tank 1011 and the second cleaning tank 1012, the chemical liquid pressure P2 in the second cleaning tank 1012 is higher than the chemical liquid pressure P1 in the first cleaning tank 1011, and a pressure difference △P=P2-P1>0, P2>P1 is formed between the first cleaning tank 1011 and the second cleaning tank 1012. Due to the pressure difference △P, the chemical liquid in the second cleaning tank 1012 will flow to the first cleaning tank 1011. The second cleaning tank 1012 is provided with an inlet 1013 for supplying fresh chemical liquid to the second cleaning tank 1012 to maintain a liquid level difference between the two cleaning tanks.

該裝置還包括一個外槽1006。每個清洗槽通過循環系統分別和外槽1006連接。與第一清洗槽1011相連接的循環系統包括第一進液口1071、第一出液口1072、第一泵1073和第一過濾器1074。第一進液口1071位於第一清洗槽1011的底部,第一出液口1072位於外槽1006的底部。與第二清洗槽1012相連接的循環系統包括第二進液口1081、第二出液口1082、第二泵1083、第二過濾器1084和閥門1085。第二進液口1081位於第二清洗槽1012的底部,第二出液口1082位於外槽1006的底部,閥門1085與隔板1002內的液體通道1042相連接,用於控制化學液的供給。在清洗過程中,第一清洗槽1011內的化學液變得越來越髒,第一清洗槽1011內的髒化學液溢出流到外槽1006,外槽1006內的髒化學液通過第一出液口1072流入循環系統,循環系統通過第一過濾器1074淨化髒化學液,乾淨的 化學液將通過第一進液口1071重新回到第一清洗槽1011內。通過這種方式,清洗槽內的化學液始終保持乾淨。進一步,隔板1002的高度不低於清洗槽的高度,以避免兩個清洗槽之間交叉污染。 The device further includes an outer tank 1006. Each cleaning tank is connected to the outer tank 1006 through a circulation system. The circulation system connected to the first cleaning tank 1011 includes a first liquid inlet 1071, a first liquid outlet 1072, a first pump 1073 and a first filter 1074. The first liquid inlet 1071 is located at the bottom of the first cleaning tank 1011, and the first liquid outlet 1072 is located at the bottom of the outer tank 1006. The circulation system connected to the second cleaning tank 1012 includes a second liquid inlet 1081, a second liquid outlet 1082, a second pump 1083, a second filter 1084 and a valve 1085. The second liquid inlet 1081 is located at the bottom of the second cleaning tank 1012, the second liquid outlet 1082 is located at the bottom of the outer tank 1006, and the valve 1085 is connected to the liquid channel 1042 in the partition 1002 to control the supply of the chemical liquid. During the cleaning process, the chemical liquid in the first cleaning tank 1011 becomes dirtier and dirtier, and the dirty chemical liquid in the first cleaning tank 1011 overflows and flows into the outer tank 1006. The dirty chemical liquid in the outer tank 1006 flows into the circulation system through the first liquid outlet 1072. The circulation system purifies the dirty chemical liquid through the first filter 1074, and the clean chemical liquid returns to the first cleaning tank 1011 through the first liquid inlet 1071. In this way, the chemical liquid in the cleaning tank is always kept clean. Furthermore, the height of the partition 1002 is not lower than the height of the cleaning tank to avoid cross contamination between the two cleaning tanks.

外槽1006還包括感測器1061和位於感測器1061下方的排液口1062。感測器1061用於檢測外槽1006內的化學液的液位。進口1013不斷地向第二清洗槽1012供應新鮮化學液,第二清洗槽1012內的化學液流向第一清洗槽1011,接著第一清洗槽1011內的化學液溢出到外槽1006。當感測器1061檢測到液位上升到設定的高度時,排液口1062將被打開並排出化學液直到液位低於設定的高度。 The outer tank 1006 also includes a sensor 1061 and a drain port 1062 located below the sensor 1061. The sensor 1061 is used to detect the liquid level of the chemical solution in the outer tank 1006. The inlet 1013 continuously supplies fresh chemical solution to the second cleaning tank 1012, and the chemical solution in the second cleaning tank 1012 flows to the first cleaning tank 1011, and then the chemical solution in the first cleaning tank 1011 overflows into the outer tank 1006. When the sensor 1061 detects that the liquid level rises to a set height, the drain port 1062 will be opened and the chemical solution will be discharged until the liquid level is lower than the set height.

圖1A-1C描述了第一機械手1005的工作過程。在清洗工藝完成後,將第一機械手1005放置到兩個相鄰的清洗槽,每對末端執行器1051穿過兩個相鄰的清洗槽。多對末端執行器1051同時抓取矽片,第一機械手1005將矽片拉升到特定高度,接著矽片隨第一機械手1005一起水平移動,使矽片從第一清洗槽1011穿過隔板1002上的插槽1004到達第二清洗槽1012。第一機械手1005使矽片下降並將矽片放置在第二清洗槽1012內的矽片保持架1003上。 Figures 1A-1C describe the working process of the first robot 1005. After the cleaning process is completed, the first robot 1005 is placed in two adjacent cleaning tanks, and each pair of end effectors 1051 passes through two adjacent cleaning tanks. Multiple pairs of end effectors 1051 grab the silicon wafer at the same time, and the first robot 1005 pulls the silicon wafer to a specific height, and then the silicon wafer moves horizontally with the first robot 1005, so that the silicon wafer passes through the slot 1004 on the partition 1002 from the first cleaning tank 1011 to the second cleaning tank 1012. The first robot 1005 lowers the silicon wafer and places the silicon wafer on the silicon wafer holder 1003 in the second cleaning tank 1012.

具有插槽1004的隔板1002防止矽片從一個清洗槽到另一個清洗槽的傳遞過程中暴露在非液相環境中,但是第一清洗槽1011內的髒化學液會通過插槽1004流向第二清洗槽1012。圖2A為具有一個插槽2004的隔板1002的一 種實施例的截面圖。插槽2004至少有一面側壁上設有一排噴頭2041,噴頭2041噴出的化學液由第二清洗槽提供,具體地,從循環系統通過液體通道2042向噴頭2041供應化學液,且循環系統的閥保持開啟。當矽片穿過插槽2004時,噴頭2041向矽片的兩面噴灑新鮮化學液。此外,噴頭2041噴出的化學液形成液簾擋住插槽2004,液簾能夠阻止髒化學液通過插槽2004流向乾淨化學液。兩個清洗槽之間的壓差也能有利於減少髒化學液從第一清洗槽1011流向第二清洗槽1012。為了進一步擋住插槽2004以避免髒化學液流向乾淨化學液,該裝置還包括插槽門2043,如圖2B和圖2C。插槽門2043由驅動設備驅動以密封或打開插槽2004。當矽片被處理完畢後,打開插槽門2043,然後噴頭2041噴灑化學液並一個接一個的傳遞矽片。其他情況下,關閉插槽門2043。 The partition 1002 with the slot 1004 prevents the silicon wafer from being exposed to the non-liquid environment during the transfer process from one cleaning tank to another cleaning tank, but the dirty chemical liquid in the first cleaning tank 1011 will flow to the second cleaning tank 1012 through the slot 1004. FIG2A is a cross-sectional view of an embodiment of the partition 1002 with a slot 2004. A row of nozzles 2041 are provided on at least one side wall of the slot 2004. The chemical liquid sprayed by the nozzle 2041 is provided by the second cleaning tank. Specifically, the chemical liquid is supplied to the nozzle 2041 from the circulation system through the liquid channel 2042, and the valve of the circulation system is kept open. When the silicon wafer passes through the slot 2004, the nozzle 2041 sprays fresh chemical liquid on both sides of the silicon wafer. In addition, the chemical liquid sprayed by the nozzle 2041 forms a liquid curtain to block the slot 2004, and the liquid curtain can prevent the dirty chemical liquid from flowing through the slot 2004 to the clean chemical liquid. The pressure difference between the two cleaning tanks can also help reduce the dirty chemical liquid from flowing from the first cleaning tank 1011 to the second cleaning tank 1012. In order to further block the slot 2004 to prevent the dirty chemical liquid from flowing to the clean chemical liquid, the device also includes a slot door 2043, as shown in Figures 2B and 2C. The slot door 2043 is driven by a driving device to seal or open the slot 2004. When the silicon wafers are processed, the slot door 2043 is opened, and then the nozzle 2041 sprays the chemical liquid and transfers the silicon wafers one by one. In other cases, the slot door 2043 is closed.

圖3A為具有多個插槽3004的隔板3002的另一種實施例的截面圖。每個插槽3004的側壁設有一排噴頭3041,從循環系統通過液體通道3042向噴頭3041供應化學液,且循環系統的閥保持開啟。當矽片穿過插槽3004時,噴頭3041向矽片的兩面噴灑新鮮化學液。此外,噴頭3041噴出的化學液形成液簾擋住插槽3004,液簾能夠阻止髒化學液通過插槽3004流向乾淨化學液。兩個清洗槽之間的壓差也能有利於減少髒化學液從第一清洗槽流向第二清洗槽。為了進一步擋住所有插槽3004以避免髒化學液流向乾淨化學液,該裝置還包括插槽門3043,如圖3B和圖3C。插 槽門3043設有多個開口3044,且開口3044的數量不少於隔板3002上的插槽3004的數量,開口3044的大小不小於隔板3002上的插槽3004的大小。插槽門3043由驅動設備驅動以密封或打開插槽3004。當矽片被處理完畢後,移動插槽門3043直到開口3044與插槽3004重疊,然後噴頭3041噴灑化學液並傳遞矽片。其他情況下,插槽3004與開口3044錯開。 FIG. 3A is a cross-sectional view of another embodiment of a partition 3002 having a plurality of slots 3004. A row of nozzles 3041 are provided on the sidewalls of each slot 3004, and chemical liquid is supplied to the nozzles 3041 from a circulation system through a liquid channel 3042, and the valve of the circulation system remains open. When the silicon wafer passes through the slot 3004, the nozzles 3041 spray fresh chemical liquid on both sides of the silicon wafer. In addition, the chemical liquid sprayed by the nozzles 3041 forms a liquid curtain to block the slot 3004, and the liquid curtain can prevent dirty chemical liquid from flowing through the slot 3004 to the clean chemical liquid. The pressure difference between the two cleaning tanks can also help reduce the flow of dirty chemical liquid from the first cleaning tank to the second cleaning tank. In order to further block all slots 3004 to prevent dirty chemical liquid from flowing to clean chemical liquid, the device also includes a slot door 3043, as shown in Figures 3B and 3C. The slot door 3043 is provided with a plurality of openings 3044, and the number of openings 3044 is not less than the number of slots 3004 on the partition 3002, and the size of the openings 3044 is not less than the size of the slots 3004 on the partition 3002. The slot door 3043 is driven by a driving device to seal or open the slot 3004. When the silicon wafer is processed, the slot door 3043 is moved until the opening 3044 overlaps with the slot 3004, and then the nozzle 3041 sprays the chemical liquid and transfers the silicon wafer. In other cases, the slot 3004 and the opening 3044 are misaligned.

如果第一機械手裝配有一對末端執行器,那麼矽片一片接一片的傳遞。為了加快傳遞效率,末端執行器的對數與矽片的數量相同,即所有矽片可以一次傳遞。較佳者,末端執行器的對數為5到25對。第一機械手的形狀像一個耙子,如圖4A-4C。第一機械手包括用於驅動第一機械手上升下降的驅動設備4052。第一機械手用來抓取矽片並將矽片從第一清洗槽傳遞到第二清洗槽。第一機械手的形狀有利於每對末端執行器4051穿過插槽,因此,末端執行器4051的對數不能多於插槽的數量。圖4A-4C為具有不同方向插槽的隔板和與插槽相配的機械手的側視圖。圖4A所示插槽4004為豎直的,且末端執行器4051的方向也是豎直的。末端執行器4051的數量為5對,且插槽4004的數量是5個。在這種情況下,矽片豎直放置在矽片保持架上,進液口位於清洗槽的底部。圖4B所示插槽4004為水平的,且末端執行器4051的方向也是水平的。末端執行器4051的數量為5對,且插槽4004的數量是5個。在這種情況下,矽片水平放置在矽片保持架上,進液口位於清洗槽的側壁。圖4C所 示插槽4004為與水平方向呈一定角度,且末端執行器4051的方向與插槽4004相同。末端執行器4051的數量為5對,且插槽4004的數量是5個。在這種情況下,矽片放置在矽片保持架上且與水平方向呈一定角度,矽片與水平方向的角度與插槽4004與水平方向的角度相同,進液口與水平方向呈一定角度。 If the first manipulator is equipped with a pair of end effectors, then the silicon wafers are delivered one by one. In order to speed up the delivery efficiency, the number of pairs of end effectors is the same as the number of silicon wafers, that is, all silicon wafers can be delivered at one time. Preferably, the number of pairs of end effectors is 5 to 25 pairs. The shape of the first manipulator is like a rake, as shown in Figures 4A-4C. The first manipulator includes a driving device 4052 for driving the first manipulator to rise and fall. The first manipulator is used to grab silicon wafers and transfer the silicon wafers from the first cleaning tank to the second cleaning tank. The shape of the first manipulator is conducive to each pair of end effectors 4051 passing through the slots, so the number of pairs of end effectors 4051 cannot be more than the number of slots. 4A-4C are side views of a partition with slots in different directions and a manipulator matching the slots. The slot 4004 shown in FIG4A is vertical, and the direction of the end effector 4051 is also vertical. The number of end effectors 4051 is 5 pairs, and the number of slots 4004 is 5. In this case, the silicon wafer is placed vertically on the silicon wafer holder, and the liquid inlet is located at the bottom of the cleaning tank. The slot 4004 shown in FIG4B is horizontal, and the direction of the end effector 4051 is also horizontal. The number of end effectors 4051 is 5 pairs, and the number of slots 4004 is 5. In this case, the silicon wafer is placed horizontally on the silicon wafer holder, and the liquid inlet is located at the side wall of the cleaning tank. The slot 4004 shown in FIG. 4C is at a certain angle to the horizontal direction, and the direction of the end effector 4051 is the same as that of the slot 4004. The number of the end effectors 4051 is 5 pairs, and the number of the slots 4004 is 5. In this case, the silicon wafer is placed on the silicon wafer holder at a certain angle to the horizontal direction, the angle of the silicon wafer to the horizontal direction is the same as the angle of the slot 4004 to the horizontal direction, and the liquid inlet is at a certain angle to the horizontal direction.

考慮到第一機械手只能將矽片提升到一定高度,該裝置還包括用於裝載和卸載矽片的第二機械手5008。圖5為具有外部清洗槽的裝置的實施例的截面圖。在清洗工藝開始前,使用第二機械手5008將矽片放置在清洗槽內的矽片保持架5003上。在整個清洗工藝完成後,使用第二機械手5008將矽片從清洗槽中取出。第二機械手5008在非工作狀態下放置在外部清洗槽5009內。外部清洗槽5009的側壁設有多個噴嘴5091噴灑去離子水或新鮮化學液以沖洗第二機械手5008。外部清洗槽的5009的底部設有排放口5092,用於排出髒化學液。外部清洗槽5009還可以用於清洗第一機械手5005。 Considering that the first manipulator can only lift the silicon wafer to a certain height, the device also includes a second manipulator 5008 for loading and unloading the silicon wafer. FIG5 is a cross-sectional view of an embodiment of a device with an external cleaning tank. Before the cleaning process starts, the second manipulator 5008 is used to place the silicon wafer on the silicon wafer holder 5003 in the cleaning tank. After the entire cleaning process is completed, the second manipulator 5008 is used to take the silicon wafer out of the cleaning tank. The second manipulator 5008 is placed in the external cleaning tank 5009 in a non-working state. The side wall of the external cleaning tank 5009 is provided with a plurality of nozzles 5091 to spray deionized water or fresh chemical solution to rinse the second manipulator 5008. The bottom of the external cleaning tank 5009 is provided with a drain port 5092 for discharging dirty chemical solution. The external cleaning tank 5009 can also be used to clean the first robot 5005.

圖6A為清洗矽片的裝置的實施例在清洗過程中的截面圖。每個清洗槽設有蓋板6110,避免在清洗過程中化學液洩露或化學蒸汽彌漫到裝置的其他區域。蓋板6110設有一個汽缸6101,用於驅動蓋板6110上下移動。由於液體從進液口噴出並流出清洗槽,液體循環流動會引起矽片保持架上的矽片振動,振動導致矽片在矽片保持架上上下彈跳,從而導致矽片和矽片保持架之間的接觸點處出現缺 陷。為了解決這個問題,矽片用三根棍狀物6111鎖住,三根棍狀物6111中的一根與蓋板6110連接,因此與蓋板6110相連接的棍狀物6111向下壓住矽片從而把矽片固定在矽片保持架上。另外兩根棍狀物6111位於矽片保持架上,在水平方向上鎖定矽片。在清洗過程中,矽片和兩根棍狀物的接觸點會產生相對運動而導致缺陷。為了減少這種缺陷,與蓋板6110相連接的棍狀物6111作為轉動滾輪由轉動機構6112驅動轉動,其他棍狀物作為從動滾輪轉動,進而帶動矽片一起轉動,如圖6A。轉動機構6112設有磁性部件6121,磁性部件6121由磁性材料製成。磁性部件6121插入外槽6006,磁性部件6121的四周設有多個隔牆6122以形成特定的空間,避免化學液接觸磁性部件6121。與蓋板6110相連接的棍狀物6111靠近磁性部件6121的一端由磁性材料製成,與蓋板6110相連接的棍狀物6111和磁性部件6121使用具有相同特性的磁性材料。轉動磁性部件6121以驅動棍狀物6111轉動,通過棍狀物6111的轉動帶動矽片轉動。 FIG6A is a cross-sectional view of an embodiment of a device for cleaning silicon wafers during a cleaning process. Each cleaning tank is provided with a cover plate 6110 to prevent leakage of chemical liquid or diffusion of chemical vapor to other areas of the device during the cleaning process. The cover plate 6110 is provided with a cylinder 6101 for driving the cover plate 6110 to move up and down. As the liquid sprays out from the liquid inlet and flows out of the cleaning tank, the circulating flow of the liquid causes the silicon wafer on the silicon wafer holder to vibrate, and the vibration causes the silicon wafer to bounce up and down on the silicon wafer holder, thereby causing defects at the contact point between the silicon wafer and the silicon wafer holder. To solve this problem, the silicon wafer is locked with three sticks 6111, one of which is connected to the cover plate 6110, so that the stick 6111 connected to the cover plate 6110 presses down the silicon wafer to fix the silicon wafer on the silicon wafer holder. The other two sticks 6111 are located on the silicon wafer holder to lock the silicon wafer in the horizontal direction. During the cleaning process, the contact points between the silicon wafer and the two sticks will produce relative movement and cause defects. In order to reduce this defect, the stick 6111 connected to the cover plate 6110 is driven by the rotating mechanism 6112 as a rotating roller, and the other sticks are rotated as driven rollers, thereby driving the silicon wafer to rotate together, as shown in Figure 6A. The rotating mechanism 6112 is provided with a magnetic component 6121, and the magnetic component 6121 is made of a magnetic material. The magnetic component 6121 is inserted into the outer groove 6006, and a plurality of partition walls 6122 are provided around the magnetic component 6121 to form a specific space to prevent the chemical liquid from contacting the magnetic component 6121. The end of the stick 6111 connected to the cover 6110 close to the magnetic component 6121 is made of a magnetic material, and the stick 6111 connected to the cover 6110 and the magnetic component 6121 use a magnetic material with the same characteristics. The magnetic component 6121 is rotated to drive the stick 6111 to rotate, and the rotation of the stick 6111 drives the silicon wafer to rotate.

圖7為根據本發明的清洗半導體矽片的裝置的另一種實施例的截面圖。清洗半導體矽片的裝置包括具有隔板7002的內槽7001,隔板7002將內槽7001分成兩個裝滿化學液的清洗槽;設於每個清洗槽底部的矽片保持架7003,用於保持矽片;隔板7002設有至少一個插槽7004;裝配有至少一對末端執行器7051的機械手7005,用於抓取至少一片矽片從第一清洗槽穿過插槽7004傳遞到第二清洗 槽,且保持矽片浸沒在化學液中。插槽7004穿透隔板7002的上部,使機械手7005可以裝載和卸載矽片。 FIG7 is a cross-sectional view of another embodiment of the device for cleaning semiconductor silicon wafers according to the present invention. The device for cleaning semiconductor silicon wafers includes an inner tank 7001 having a partition 7002, the partition 7002 dividing the inner tank 7001 into two cleaning tanks filled with chemical liquid; a silicon wafer holder 7003 provided at the bottom of each cleaning tank for holding silicon wafers; the partition 7002 is provided with at least one slot 7004; a manipulator 7005 equipped with at least one pair of end effectors 7051 for grabbing at least one silicon wafer from the first cleaning tank through the slot 7004 to the second cleaning tank, and keeping the silicon wafer immersed in the chemical liquid. The slot 7004 penetrates the upper part of the partition 7002, so that the manipulator 7005 can load and unload silicon wafers.

圖8A-8F為矽片清洗方法的一種實施例。一種矽片清洗方法,包括:將至少一片矽片放置在裝滿化學液的第一清洗槽8011內的矽片保持架上;所述矽片在第一清洗槽8011內處理完成後,將所述矽片從第一清洗槽8011傳遞到第二清洗槽8012,且所述矽片在傳遞過程中浸沒在化學液中;所述矽片在第二清洗槽8012內處理完成後,將所述矽片從第二清洗槽8012取出。 Figures 8A-8F are an embodiment of a silicon wafer cleaning method. A silicon wafer cleaning method includes: placing at least one silicon wafer on a silicon wafer holder in a first cleaning tank 8011 filled with chemical liquid; after the silicon wafer is processed in the first cleaning tank 8011, transferring the silicon wafer from the first cleaning tank 8011 to the second cleaning tank 8012, and the silicon wafer is immersed in the chemical liquid during the transfer process; after the silicon wafer is processed in the second cleaning tank 8012, taking the silicon wafer out of the second cleaning tank 8012.

如圖8A-8F所示,矽片的傳遞方式為一片接一片的將矽片從第一清洗槽8011傳遞到第二清洗槽8012。在傳遞過程中,在第一清洗槽8011和第二清洗槽8012之間噴灑化學液以形成液簾。 As shown in Figures 8A-8F, the transfer method of the silicon wafers is to transfer the silicon wafers from the first cleaning tank 8011 to the second cleaning tank 8012 one by one. During the transfer process, a chemical liquid is sprayed between the first cleaning tank 8011 and the second cleaning tank 8012 to form a liquid curtain.

圖9A-9C為矽片清洗方法的另一種實施例。一種矽片清洗方法,包括:將至少一片矽片放置在裝滿化學液的第一清洗槽9011內的矽片保持架上;所述矽片在第一清洗槽9011內處理完成後,將所述矽片從第一清洗槽9011傳遞到第三清洗槽9013;所述矽片在第三清洗槽9013內處理完成後,將所述矽片從第三清洗槽9013傳遞到第二清洗槽9012,且所述矽片在傳遞過程中浸沒在化學液中; 所述矽片在第二清洗槽9012內處理完成後,將所述矽片從第二清洗槽9012取出。 Figures 9A-9C are another embodiment of a silicon wafer cleaning method. A silicon wafer cleaning method includes: placing at least one silicon wafer on a silicon wafer holder in a first cleaning tank 9011 filled with chemical liquid; after the silicon wafer is processed in the first cleaning tank 9011, transferring the silicon wafer from the first cleaning tank 9011 to the third cleaning tank 9013; after the silicon wafer is processed in the third cleaning tank 9013, transferring the silicon wafer from the third cleaning tank 9013 to the second cleaning tank 9012, and the silicon wafer is immersed in the chemical liquid during the transfer process; After the silicon wafer is processed in the second cleaning tank 9012, taking the silicon wafer out of the second cleaning tank 9012.

如圖9A-9C所示,矽片的傳遞方式為一次將所有矽片從一個清洗槽傳遞到另一個清洗槽。在矽片的傳遞過程中,在每兩個清洗槽之間噴灑化學液以形成液簾。 As shown in Figures 9A-9C, the transfer method of the silicon wafers is to transfer all the silicon wafers from one cleaning tank to another cleaning tank at a time. During the transfer process of the silicon wafers, chemical liquid is sprayed between every two cleaning tanks to form a liquid curtain.

1001‧‧‧內槽 1001‧‧‧Inner tank

1002‧‧‧隔板 1002‧‧‧Partition

1003‧‧‧矽片保持架 1003‧‧‧Silicon wafer holder

1004‧‧‧插槽 1004‧‧‧Slot

1005‧‧‧第一機械手 1005‧‧‧The First Robot

1006‧‧‧外槽 1006‧‧‧External tank

1011‧‧‧第一清洗槽 1011‧‧‧First cleaning tank

1012‧‧‧第二清洗槽 1012‧‧‧Second cleaning tank

1013‧‧‧進口 1013‧‧‧Import

1051‧‧‧末端執行器 1051‧‧‧End Executor

1061‧‧‧感測器 1061‧‧‧Sensor

1062‧‧‧排液口 1062‧‧‧Drain port

1071‧‧‧第一進液口 1071‧‧‧First liquid inlet

1072‧‧‧第一出液口 1072‧‧‧First liquid outlet

1073‧‧‧第一泵 1073‧‧‧First pump

1074‧‧‧第一過濾器 1074‧‧‧First filter

1081‧‧‧第二進液口 1081‧‧‧Second liquid inlet

1082‧‧‧第二出液口 1082‧‧‧Second liquid outlet

1083‧‧‧第二泵 1083‧‧‧Second pump

1084‧‧‧第二過濾器 1084‧‧‧Second filter

1085‧‧‧閥門 1085‧‧‧Valve

Claims (35)

一種清洗半導體矽片的裝置,包括:內槽;至少一個隔板,將所述內槽分成至少兩個裝滿化學液的清洗槽;裝配有至少一對末端執行器的第一機械手,用於抓取矽片並將所述矽片從第一清洗槽傳遞到第二清洗槽;其中,每個清洗槽的底部設有一個用於保持所述矽片的矽片保持架,所述至少一個隔板設有至少一個插槽;其中,第一機械手抓取所述矽片並將所述矽片從所述第一清洗槽穿過所述插槽傳遞到所述第二清洗槽的過程中,保持所述矽片浸沒在所述化學液中,其中所述第一清洗槽的液面高度低於所述第二清洗槽的液面高度。 A device for cleaning semiconductor silicon wafers, comprising: an inner tank; at least one partition, dividing the inner tank into at least two cleaning tanks filled with chemical liquid; a first manipulator equipped with at least one pair of end effectors, used to grab a silicon wafer and transfer the silicon wafer from the first cleaning tank to the second cleaning tank; wherein, a silicon wafer holder for holding the silicon wafer is provided at the bottom of each cleaning tank, and the at least one partition is provided with at least one slot; wherein, during the process of the first manipulator grabbing the silicon wafer and transferring the silicon wafer from the first cleaning tank through the slot to the second cleaning tank, the silicon wafer is kept immersed in the chemical liquid, wherein the liquid level of the first cleaning tank is lower than the liquid level of the second cleaning tank. 如請求項1所述的裝置,其中所述化學液為SPM,且所述SPM的溫度在80℃-250℃。 The device as described in claim 1, wherein the chemical liquid is SPM, and the temperature of the SPM is between 80℃ and 250℃. 如請求項2所述的裝置,其中所述SPM為H2SO4和H2O2的混合物,且所述H2O2和所述H2SO4的比值為1:1到1:100。 The device as described in claim 2, wherein the SPM is a mixture of H 2 SO 4 and H 2 O 2 , and the ratio of the H 2 O 2 to the H 2 SO 4 is 1:1 to 1:100. 如請求項1所述的裝置,其中所述第一清洗槽內的化學液和所述第二清洗槽內的化學液具有相同溫度。 The device as described in claim 1, wherein the chemical liquid in the first cleaning tank and the chemical liquid in the second cleaning tank have the same temperature. 如請求項1所述的裝置,其中所述第一清洗槽內的化學液和所述第二清洗槽內的化學液具有不同溫度。 The device as described in claim 1, wherein the chemical liquid in the first cleaning tank and the chemical liquid in the second cleaning tank have different temperatures. 如請求項1所述的裝置,其中所述第一清洗槽內的化學液和所述第二清洗槽內的化學液濃度相同。 The device as described in claim 1, wherein the concentration of the chemical liquid in the first cleaning tank is the same as that of the chemical liquid in the second cleaning tank. 如請求項1所述的裝置,其中所述第一清洗槽內的化學液和所述第二清洗槽內的化學液濃度不同。 The device as described in claim 1, wherein the concentration of the chemical liquid in the first cleaning tank is different from that in the second cleaning tank. 如請求項1所述的裝置,還包括一個外槽,每個所述清洗槽與所述外槽相連接,所述化學液通過循環系統循環返回到各所述清洗槽。 The device as described in claim 1 also includes an outer tank, each of the cleaning tanks is connected to the outer tank, and the chemical liquid is circulated back to each of the cleaning tanks through a circulation system. 如請求項8所述的裝置,其中所述循環系統包括一個位於所述清洗槽內的進液口。 The device as described in claim 8, wherein the circulation system includes a liquid inlet located in the cleaning tank. 如請求項9所述的裝置,其中所述進液口位於所述清洗槽的底部。 The device as described in claim 9, wherein the liquid inlet is located at the bottom of the cleaning tank. 如請求項9所述的裝置,其中所述進液口位於所述清洗槽的側壁。 The device as described in claim 9, wherein the liquid inlet is located on the side wall of the cleaning tank. 如請求項9所述的裝置,其中所述進液口與水平方向呈一定角度。 A device as described in claim 9, wherein the liquid inlet is at a certain angle to the horizontal direction. 如請求項8所述的裝置,其中所述第二清洗槽設有進口用於提供所述化學液。 The device as described in claim 8, wherein the second cleaning tank is provided with an inlet for providing the chemical liquid. 如請求項13所述的裝置,其中所述外槽還包括感測器和位於所述感測器下方的排液口,所述感測器用於檢測所述外槽內的化學液的液位。 The device as described in claim 13, wherein the outer tank further includes a sensor and a drain port located below the sensor, and the sensor is used to detect the liquid level of the chemical liquid in the outer tank. 如請求項1所述的裝置,其中所述至少一個隔板的高度不低於所述清洗槽的高度。 The device as described in claim 1, wherein the height of at least one partition is not lower than the height of the cleaning tank. 如請求項1所述的裝置,其中所述第二清洗槽內的化學液比所述第一清洗槽內的化學液新鮮。 The device as described in claim 1, wherein the chemical liquid in the second cleaning tank is fresher than the chemical liquid in the first cleaning tank. 如請求項1所述的裝置,其中所述插槽至少有一面側壁上設有一排噴頭,用於噴灑所述化學液以形成液簾。 The device as described in claim 1, wherein the slot has at least one side wall provided with a row of nozzles for spraying the chemical liquid to form a liquid curtain. 如請求項17所述的裝置,其中所述噴頭噴出的化學液由所述第二清洗槽提供。 The device as described in claim 17, wherein the chemical liquid sprayed by the nozzle is provided by the second cleaning tank. 如請求項1所述的裝置,還包括一個用於密封或打開所述插槽的插槽門。 The device as described in claim 1 also includes a slot door for sealing or opening the slot. 如請求項1所述的裝置,其中所述末端執行器的對數不多於所述插槽的個數。 A device as claimed in claim 1, wherein the number of pairs of end effectors is no greater than the number of slots. 如請求項1所述的裝置,其中裝配有多於一對所述末端執行器的所述第一機械手的形狀像一個耙子。 The device as claimed in claim 1, wherein the first manipulator equipped with more than one pair of end effectors is shaped like a rake. 如請求項1所述的裝置,其中所述末端執行器的數量為1至25對。 A device as claimed in claim 1, wherein the number of end effectors is 1 to 25 pairs. 如請求項1所述的裝置,其中所述矽片保持架前後移動。 A device as described in claim 1, wherein the silicon wafer holder moves back and forth. 如請求項1所述的裝置,其中所述至少一個插槽為豎直方向。 A device as claimed in claim 1, wherein at least one of the slots is vertical. 如請求項1所述的裝置,其中所述至少一個插槽為水平方向。 A device as claimed in claim 1, wherein at least one of the slots is horizontal. 如請求項1所述的裝置,其中所述至少一個插槽與水平方向呈一定角度。 A device as claimed in claim 1, wherein at least one of the slots is at an angle to the horizontal. 如請求項1所述的裝置,還包括一個蓋板及三根棍狀物,其中,與所述蓋板相連接的棍狀物向下壓住所述矽片從而把所述矽片固定在所述矽片保持架上。 The device as described in claim 1 further includes a cover plate and three stick-shaped objects, wherein the stick-shaped objects connected to the cover plate press down the silicon wafer to fix the silicon wafer on the silicon wafer holder. 如請求項27所述的裝置,其中所述三根棍狀物中的另外兩根棍狀物位於所述矽片保持架上,在水平方向上鎖定所述矽片。 The device as described in claim 27, wherein the other two of the three sticks are located on the silicon wafer holder to lock the silicon wafer in the horizontal direction. 如請求項28所述的裝置,其中與所述蓋板相連接的棍狀物作為轉動滾輪由轉動機構驅動轉動,其他棍狀物作為從動滾輪轉動,進而帶動所述矽片一起轉動。 As described in claim 28, the stick-shaped object connected to the cover plate is driven by a rotating mechanism as a rotating roller, and the other stick-shaped objects are driven as driven rollers to rotate, thereby driving the silicon wafer to rotate together. 如請求項1所述的裝置,還包括用於裝載和卸載所述矽片的第二機械手。 The device as described in claim 1 also includes a second robot for loading and unloading the silicon wafer. 如請求項1所述的裝置,還包括用於清洗所述第一機械手的外部清洗槽。 The device as described in claim 1 also includes an external cleaning tank for cleaning the first robot. 如請求項1所述的裝置,其中所述至少一個插槽穿透所述至少一個隔板的上部。 A device as claimed in claim 1, wherein the at least one slot penetrates the upper portion of the at least one partition. 一種清洗半導體矽片的方法,包括:將至少一片矽片放置在裝滿化學液的第一清洗槽內的矽片保持架上; 所述至少一片矽片在所述第一清洗槽內處理完成後,將所述至少一片矽片從所述第一清洗槽傳遞到第二清洗槽,且所述至少一片矽片在傳遞過程中浸沒在化學液中;所述至少一片矽片在所述第二清洗槽內處理完成後,將所述至少一片矽片從所述第二清洗槽取出,其中所述第一清洗槽的液面高度低於所述第二清洗槽的液面高度。 A method for cleaning semiconductor silicon wafers, comprising: placing at least one silicon wafer on a silicon wafer holder in a first cleaning tank filled with chemical liquid; After the at least one silicon wafer is processed in the first cleaning tank, transferring the at least one silicon wafer from the first cleaning tank to a second cleaning tank, and immersing the at least one silicon wafer in the chemical liquid during the transfer process; after the at least one silicon wafer is processed in the second cleaning tank, taking the at least one silicon wafer out of the second cleaning tank, wherein the liquid level of the first cleaning tank is lower than the liquid level of the second cleaning tank. 如請求項33所述的方法,還包括步驟:當所述至少一片矽片在所述第一清洗槽內處理完成後,先將所述至少一片矽片從所述第一清洗槽傳遞到第三清洗槽,當所述至少一片矽片在所述第三清洗槽內處理完成後,再將所述至少一片矽片從所述第三清洗槽傳遞到所述第二清洗槽。 The method as claimed in claim 33 further comprises the steps of: after the at least one silicon wafer is processed in the first cleaning tank, first transferring the at least one silicon wafer from the first cleaning tank to the third cleaning tank, and after the at least one silicon wafer is processed in the third cleaning tank, then transferring the at least one silicon wafer from the third cleaning tank to the second cleaning tank. 如請求項33所述的方法,還包括步驟:噴灑所述化學液進而在所述第一清洗槽和所述第二清洗槽之間形成液簾。 The method as described in claim 33 further includes the step of spraying the chemical liquid to form a liquid curtain between the first cleaning tank and the second cleaning tank.
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* Cited by examiner, † Cited by third party
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US20150332940A1 (en) 2012-11-28 2015-11-19 ACM Reasearch (Shanghai) Inc. Method and apparatus for cleaning semiconductor wafer

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