CN102723388A - Nanocrystalline/quantum dot sensitive silicon substrate battery piece and preparation method thereof - Google Patents
Nanocrystalline/quantum dot sensitive silicon substrate battery piece and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a nanocrystalline/quantum dot sensitive silicon substrate battery piece and a preparation method thereof. The nanocrystalline/quantum dot sensitive silicon substrate battery piece is characterized in that the surface of the silicon substrate battery piece is compact, nanocrystallines/quantum dots are uniformly distributed on the surface of the silicon substrate battery piece and are firmly combined with the silicon substrate battery piece; the nanocrystallines/quantum dots can be used as nano particles of a transition metal sulfur group compound of a semiconductor material. The preparation method comprises the following steps: preparing the nanocrystallines/quantum dots by means of a pre-synthesis method; pre-treating the silicon substrate battery piece; and depositing the nanocrystallines/quantum dots prepared by means of the pre-synthesis method on the silicon substrate battery. According to the nanocrystalline/quantum dot sensitive silicon substrate battery piece, the sunlight spectral absorption rate of the silicon substrate battery piece can be improved, the reflection loss is reduced, and the light current density and the photoelectrical conversion efficiency are improved substantially. The process is simple, the cost is low, the production period is short, and the nanocrystalline/quantum dot sensitive silicon substrate battery piece and the preparation method are suitable for large-scale production.
Description
Technical field
The present invention relates to photoelectric material and area of solar cell, relate in particular to a kind of nanocrystalline/quantum dot sensitized silica-based battery sheet and preparation method thereof.
Background technology
Solar energy will become following important energy source.To 21 century Mo, regenerative resource will account in energy resource structure more than 80%, and solar power generation will account for more than 60%.Monocrystaline silicon solar cell is called first generation photovoltaic device, the about 31-33% of the highest theoretical transformation efficient, and the high conversion efficiency in laboratory is about 25%.Mass-produced single crystal silicon solar cell average efficiency is that present conversion efficiency is the highest about 15% on the market, the photovoltaic device that technology is the most ripe.Dominate in large-scale application and commercial production occupies more than 90% of photovoltaic market, the present world.Although crystal silicon solar batteries has higher photoelectric conversion efficiency, still have a certain distance from theoretical value, have very big development space.The energy gap of crystalline silicon is 1.12eV; The solar photon that is higher than energy gap absorbs the back and produces hot electron and hole; Through phonon emission subsequently; These hot carriers are cooling rapidly before their energy is hunted down, and causes the form loss of a large amount of solar energies with " hot electron ", has limited device efficiency.In addition, cell panel has certain reflex, also loses the part solar energy.
Battery manufacturers adopts technology such as surface-texturing, surface etching, emitter region passivation, subregion doping to handle to cell panel; Improve the photoelectric conversion efficiency of photovoltaic device; Reduce the light reflection loss; Though the light abstraction width of battery is expanded to some extent, the absorption and the conversion efficiency of solar energy is not significantly improved.In addition, vapor deposition SiN antireflective passivating coating has also increased production cost greatly on the crystal silicon material.
Summary of the invention
One of the object of the invention is to provide a kind of nanocrystalline/quantum dot sensitized silica-based battery sheet that absorption efficiency is high, reflection loss is little, density of photocurrent is high, electricity conversion is high, production cost is low of sunlight.Two of the object of the invention be to provide this kind nanocrystalline/preparation method of quantum dot sensitized silica-based battery sheet, this preparation method's technology is simple, the reaction time is short, production cost is low, is prone to industrialization.
Nanocrystalline/quantum dot has following characteristics: (1) quantum size effect; (2) macro quanta tunnel effect; (3) dielectric confinement effect, and produced the energy gap modulation by these effects,, high extinction coefficient, big a lot of characteristics such as intrinsic dipole moment.These characteristics let it be considered to photovoltaic device critical material of future generation as light absorber and cause great concern.So rationally utilize quantum dot sensitized crystal silicon battery sheet can effectively increase its absorption, reduce reflection, increase density of photocurrent and electricity conversion to light.Nanocrystalline/quantum dot sensitized silica-based battery sheet can increase the absorption efficiency to sunlight, reduces reflection, increases its density of photocurrent and electricity conversion.When the irradiate light solar cell surface, a part of photon is absorbed by quanta point material, and then produces photo-generated carrier and transfer on the silica-based battery sheet.
Nanocrystalline/the quantum dot of semi-conducting material has the effect that slows down hot carrier cooldown rate and electronics relaxation, can make hot carrier before being cooled to band edge, and they are caught utilization.The energy of photon is effectively transmitted, and makes electronics take place to move more, becomes free electron, gathers the formation potential difference in P-N knot both sides.When circuit is connected in the outside, under the effect of this voltage, will have electric current and flow through the certain power output of external circuit generation.The essence of this process is the process that photon energy converts electric energy to.
With sulfur family metallic compound nano crystalline substance/quantum dot sensitized crystal silicon material is the effective way that improves existing silion cell photoelectric conversion efficiency: (1) sulfur family metallic compound quantum dot absorbing light spectrum width, absorption coefficient height; (2) energy of the lowest excited attitude electronics of some sulfur family metallic compound quantum dot is positioned under the lowest conduction band of crystalline silicon, and the photoproduction hot carrier can shift to matrix from quantum dot in the quantum dot; (3) having the potential barrier electric field that produces because of p-n junction in the crystal silicon material, more help the separation of the photo-generated carrier of deep diffusion entering, is the better electron acceptor matrix of ratio nano TiO2.
The present invention utilizes nanocrystalline/quantum dot energy gap modulation; High extinction coefficient, big characteristics such as intrinsic dipole moment are on the basis that existing solar cell industry is produced; Utilize method of the present invention; Through the preliminary treatment to silica-based battery sheet, growing nano-crystal/quantum dot on silica-based battery sheet prepares nanocrystalline/quantum dot sensitized silica-based battery sheet.
Technical scheme of the present invention is specific as follows:
A kind of nanocrystalline/quantum dot sensitized silica-based battery sheet; Silica-based battery sheet surface compact; Be distributed with nanocrystalline/quantum dot equably, nanocrystalline/quantum dot combines firmly with silica-based battery sheet, said nanocrystalline/quantum dot be for making the nano particle of transition metal chalcogenide of semi-conducting material.Said silica-based battery sheet is that solar battery sheets such as monocrystalline silicon, polysilicon, amorphous silicon or microcrystal silicon all can.
Further, transition metal is one or more of copper, lead, tin, zinc, molybdenum, iron, antimony, bismuth, cadmium, silver, nickel, cobalt.
Said nanocrystalline/quantum dot is the nano particle of one or more semi-conducting materials such as copper sulfide, vulcanized lead, artificial gold, zinc sulphide, molybdenum sulfide, iron sulfide, antimony trisulfide, bismuth sulfide, cadmium sulfide, silver sulfide, nickel sulfide, cobalt sulfide, cadmium selenide, lead selenide.
Aforementioned nanocrystalline/preparation method of quantum dot sensitized silica-based battery sheet, may further comprise the steps:
A. synthetic method prepares nanocrystalline/quantum dot in advance
Source metal is with acetate or sulfate or the nitrate or the chlorate of transition metal.Source metal can adopt a kind of acetate or sulfate or nitrate or chlorate of transition metal; Also can adopt acetate or sulfate or the nitrate or the chlorate of multiple transition metal; Such as, can adopt zinc sulfate as source metal, also can adopt zinc sulfate and copper sulphate as source metal.The sulphur source is vulcanized sodium or ammonium sulfide or thioacetamide or thiocarbamide or sodium thiosulfate; Prepare source metal and sulphur source solution respectively, with the ratio 1:1-1:3 in sulphur source it is mixed, and add surfactant, stir, the control grain growth with source metal.Can generate in the solution this moment has a spot of quantum dot, and will be as the crystal seed of silica-based battery sheet nano surface crystalline substance/Quantum Dots Growth.The suitable solution concentration scope in source metal and sulphur source is respectively 0.01-0.15mol/l, 0.01-0.45mol/l.
The preliminary treatment of b. silica-based battery sheet
Earlier silica-based battery sheet is put into absolute ethyl alcohol, acetone or aqueous solvent supersound washing 1-15min, again after the water flushing, 30-60
OUnder the C condition, with distilled water, H
2O
2, ammoniacal liquor mixed solution clean 5-15min, distilled water, H
2O
2, ammoniacal liquor ratio be 2:1:1-9:1:1, and then put into the hydrofluoric acid solution that is diluted to 5%-30% with ethanol or water and corrode 3-15min, after the taking-up, wash with ultra-pure water.Washing or to clean be in order to remove the impurity on silica-based battery sheet surface, corrosion is to make silica-based battery sheet surface become coarse, makes that silica-based battery sheet will be more firm with combining of nanocrystalline/quantum dot in the subsequent step.
C. the deposition growing of nanocrystalline/quantum dot on silica-based battery sheet
Adopt the chemical bath dip-coating method that nanocrystalline/quantum dot is grown at silica-based battery sheet surface deposition among the present invention, the benefit of this method is that the coverage rate of nanocrystalline/quantum dot on silica-based battery sheet of growth is big, and fastness is good.Concrete operation method is: pretreated silica-based battery sheet is vertically put into the solution that has mixed fast, lift taking-up behind the 2-5min, at 30-80
OC is heating 2-5min down, and pure water spray 2min is operating as a circulation like this; After 2-5 the circulation like this, silica-based battery sheet is taken out, at 100-500
OHeat treated 2-15min in the C scope behind taking-up and the natural cooling, with a large amount of ultra-pure water flushings, washes bulky grain and impurity on the silica-based battery sheet off, and then puts into baking oven, at 100-300
ODry 2-15min under the C condition.
Of the present invention nanocrystalline/quantum dot sensitized silica-based battery sheet can improve the absorption efficiency of silica-based battery sheet to sunlight, reduces reflection loss, and significantly increases density of photocurrent, the electricity conversion of silica-based battery sheet.Silica-based battery sheet after nanocrystalline/quantum dot sensitized processing is compared with former silica-based battery sheet, and open circuit voltage increases 5% ~ 15%, and density of photocurrent and photoelectric conversion efficiency increase about 10 ~ 60%.
Of the present invention nanocrystalline/that the preparation method of quantum dot sensitized silica-based battery sheet has technology is simple, the reaction time is short, production cost is low, is prone to plurality of advantages such as industrialization, helps advancing the development of solar cell industry.
Description of drawings
Fig. 1 is nanocrystalline/quantum dot sensitized silica-based battery chip architecture sketch map;
Fig. 2 is nanocrystalline among the embodiment 1/quantum dot sensitized silica-based battery emission scan Electronic Speculum figure of film studio;
Fig. 3 is nanocrystalline among the embodiment 1/quantum dot sensitized crystal silicon battery sheet I-V figure.
Embodiment
The present invention is further specified the analytically pure raw material of the raw materials used whole employings of the present invention below in conjunction with embodiment and Figure of description.
Embodiment 1
Present embodiment prepares source metal and sulphur source solution respectively earlier; After it is mixed and made into quantum dot; Putting into apace wherein through pretreated silica-based battery sheet, adopt the chemical bath dip-coating method to generate firmly fine and close nanocrystalline/quantum dot in silica-based battery sheet surface reaction again, concrete steps are following:
A. synthetic method prepares nanocrystalline/quantum dot in advance
Compound concentration is respectively Schweinfurt green [(CH3COO) 2Cu.H2O]/ethanolic solution of 0.01-0.5mol/l and thioacetamide [CH3CSNH2]/ethanolic solution of 0.15mol/l, with its mixing, and stirs.Can generate a spot of copper sulfide quantum dot in the solution this moment, and these quantum dots will be as the crystal seed of silica-based battery sheet surface Quantum Dots Growth.
The preliminary treatment of b, silica-based battery sheet
Earlier silica-based battery sheet is vertically put into ethanol supersound washing 2-10min, after the water flushing, 50
OUnder the C water bath condition, use distilled water, H2O2, ammoniacal liquor proportion to clean 2-10Min, and then vertically put into and be diluted to 30% hydrofluoric acid solution with ethanol and corrode as the mixed solution of 2:1:1-9:1:1, and ultrasonic 10min, after the taking-up, wash with ultra-pure water.
The deposition growing of c, nanocrystalline/quantum dot
Pretreated silica-based battery sheet is vertically put into the solution that has mixed fast, lift taking-up behind the 2-5min, at 30-60
OC is heating 2-5min down, and pure water spray 2min is operating as a circulation like this; After 2-5 the circulation like this, silica-based battery sheet is taken out, at 100-200
OC condition heat treated 5-10min after the taking-up, with the ultra-pure water flushing, washes bulky grain and impurity on the silica-based battery sheet off, puts into baking oven then, at 100-200
ODry 10min under the C condition can make the combination of quantum dot and silica-based battery sheet more firm like this.(FESEM) surveys its pattern with field emission scanning electron microscope, referring to accompanying drawing 2, can see, and the brilliant uniform particles of the copper sulphide nano of preparation, and to be distributed in silica-based battery sheet surperficial on compact and firm ground.
With power is that the xenon lamp simulated solar irradiation of 500W is as light source; Survey its I-V curve with electrochemical workstation; Can find out that from accompanying drawing 3 with respect to former silica-based battery sheet, its open circuit voltage (Voc) is increased to 0.61V from 0.57V; Open circuit voltage has increased about 7% relatively, and its peak photoelectric respone power is from 0.019 (mw/cm
2) be increased to 0.034 (mw/cm
2), peak photoelectric respone power has increased about 79% relatively, explains through nanocrystalline/quanta point material sensitization silica-based battery sheet photoelectric properties later and significantly improves.
Embodiment 2
A, preparatory synthetic method prepare quantum dot
Get lead acetate that concentration is 0.01-0.5mol/l and thioacetamide respectively as source metal and sulphur source, source metal and sulphur source are sneaked in the container, add surfactant, stir.
The preliminary treatment of b, silica-based battery sheet
Earlier silica-based battery sheet is vertically put into ethanol supersound washing 2-10min, after the water flushing, at 30-60
OUnder the C, use distilled water: H2O2: the mixed solution of ammoniacal liquor=2:1:1-9:1:1 cleans 2-10min, and then vertically puts into and be diluted to 30% hydrofluoric acid solution with ethanol or pure water and corrode, and ultrasonic 2-10min after the taking-up, washes with ultra-pure water.
The deposition growing of c, nanocrystalline/quantum dot
Silica-based battery sheet after handling is vertically put into lead acetate and the thioacetamide mixed solution that has mixed fast, lift taking-up behind the 2-5min, at 30-80
OC is heating 2-5min down, and pure water spray 2min is operating as a circulation like this; After 2-5 the circulation like this, silica-based battery sheet is taken out, at 150-500
OHeat treated 2-15min in the C scope behind taking-up and the natural cooling, with a large amount of ultra-pure water flushings, washes bulky grain and impurity on the silica-based battery sheet off, and then puts into baking oven, at 100-300
ODry 2-15min under the C condition.
Embodiment 3
The preparation of a, quantum dot
Butter of tin/ethanolic solution of compound concentration 0.01-0.5mol/l, thioacetamide/ethanolic solution of compound concentration 0.01-0.15mol/l respectively as source metal and sulphur source, mixes source metal and sulphur source simultaneously, stirs.
The preliminary treatment of b, silica-based battery sheet
Earlier silica-based battery sheet is vertically put into ethanol supersound washing 2-10min, after the water flushing, at 30-50
OUnder the C, use distilled water: H2O2: the mixed solution of ammoniacal liquor=2:1:1-9:1:1 cleans 2-10min, vertically puts into to be diluted to 30% hydrofluoric acid solution with ethanol or pure water and to corrode again, and ultrasonic 2-10min after the taking-up, washes with ultra-pure water.
The deposition growing of c, nanocrystalline/quantum dot
Pretreated silica-based battery sheet is vertically put into the solution that butter of tin/ethanol and thioacetamide/ethanol mix; Lift taking-up behind the 2-5min; Wherein butter of tin/ethanolic solution concentration is 0.05mol/l; Thioacetamide/ethanolic solution concentration is 0.15mol/l, and making its concentration ratio is 1:3.At 30-80
OC is heating 2-5min down, and pure water spray 2min is operating as a circulation like this; After 2-5 the circulation like this, silica-based battery sheet is taken out, at 100-500
OC heat treated 5-15min washes with ultra-pure water.Put into baking oven then, at 100-200
ODry 5-10min under the C condition.
Embodiment 4
The preparation of a, quantum dot
Prepare the cadmium sulfate solution of 0.01mol/l concentration, prepare the sodium sulfide solution of 0.01mol/l concentration simultaneously, respectively get 30ml respectively as source metal and sulphur source, mixing and stirring.
The preliminary treatment of b, silica-based battery sheet
Earlier silica-based battery sheet is vertically put into ethanol supersound washing 2-10min, after the water flushing, at 30-50
OUnder the C, use distilled water: H2O2: the mixed solution of ammoniacal liquor=2:1:1-9:1:1 cleans 2-10min, vertically puts into to be diluted to 30% hydrofluoric acid solution with ethanol or pure water and to corrode again, and ultrasonic 2-10min after the taking-up, washes with ultra-pure water.
The deposition growing of c, nanocrystalline/quantum dot
Pretreated silica-based battery sheet vertically put into fast mixed cadmium sulfate and sodium sulfide solution, lift taking-up behind the 2-5min, at 30-80
OC is heating 2-5min down, and pure water spray 2min is operating as a circulation like this; After 2-5 the circulation like this, silica-based battery sheet is taken out, at 100-500
OHeat treated 5-15min in the C scope behind taking-up and the natural cooling, with a large amount of ultra-pure water flushings, washes bulky grain and impurity on the silica-based battery sheet off, and then puts into baking oven, at 100-300
ODry 5-10min under the C condition.
Embodiment 5
The preparation of a, quantum dot
Prepare the zinc acetate solution of 0.02mol/l concentration, prepare the thiourea solution of 0.02mol/l concentration simultaneously, respectively get 30ml, mix, stir respectively as source metal and sulphur source.
The preliminary treatment of b, silica-based battery sheet
Earlier silica-based battery sheet is vertically put into ethanol supersound washing 2-10min, after the water flushing, at 30-50
OUnder the C, use distilled water: H2O2: the mixed solution of ammoniacal liquor=2:1:1-9:1:1 cleans 2-10min, and then vertically puts into and be diluted to 30% hydrofluoric acid solution with ethanol or pure water and corrode, and ultrasonic 2-10Min after the taking-up, washes with ultra-pure water.
The deposition growing of c, nanocrystalline/quantum dot
Pretreated silica-based battery sheet is vertically put into zinc acetate and the thiocarbamide mixed solution that has mixed fast, lift taking-up behind the 2-5min, at 30-80
OC is heating 2-5min down, and pure water spray 2min is operating as a circulation like this; After 2-5 the circulation like this, silica-based battery sheet is taken out, at 100-500
OHeat treated 5-15min in the C scope behind taking-up and the natural cooling, with a large amount of ultra-pure water flushings, washes bulky grain and impurity on the silica-based battery sheet off, and then puts into baking oven, at 100-200
ODry 2-15min under the C condition.
Embodiment 6
The preparation of a, quantum dot
Prepare the zinc acetate solution of 0.02mol/l concentration, prepare the thiourea solution of 0.02mol/l concentration simultaneously, respectively get 30ml, mix, stir respectively as source metal and sulphur source.
The preliminary treatment of b, silica-based battery sheet
Earlier silica-based battery sheet is vertically put into ethanol supersound washing 2-10min, after the water flushing, at 30-50
OUnder the C, use distilled water: H2O2: the mixed solution of ammoniacal liquor=2:1:1-9:1:1 cleans 2-10min, and then vertically puts into and be diluted to 30% hydrofluoric acid solution with ethanol or pure water and corrode, and ultrasonic 2-10Min after the taking-up, washes with ultra-pure water.
The deposition growing of c, nanocrystalline/quantum dot
Pretreated silica-based battery sheet is vertically put into zinc acetate and the thiocarbamide mixed solution that has mixed fast, lift taking-up behind the 2-5min, at 30-80
OC is heating 2-5min down, and pure water spray 2min is operating as a circulation like this; After 2-5 the circulation like this, silica-based battery sheet is taken out, at 100-500
OHeat treated 5-15min in the C scope behind taking-up and the natural cooling, with a large amount of ultra-pure water flushings, washes bulky grain and impurity on the silica-based battery sheet off, and then puts into baking oven, at 100-200
ODry 2-15min under the C condition.
Embodiment 6
The preparation of a, quantum dot
The cadmium sulfate solution of preparation 0.01mol/l concentration, the copper-bath of 0.01mol/l concentration; Prepare the sodium sulfide solution of 0.01mol/l concentration simultaneously; Cadmium sulfate solution, copper-bath are respectively got 15ml as source metal, and get the 30ml sodium sulfide solution as sulphur source, mixing and stirring.
The preliminary treatment of b, silica-based battery sheet
Earlier silica-based battery sheet is vertically put into ethanol supersound washing 2-10min, after the water flushing, at 30-50
OUnder the C, use distilled water: H2O2: the mixed solution of ammoniacal liquor=2:1:1-9:1:1 cleans 2-10min, vertically puts into to be diluted to 30% hydrofluoric acid solution with ethanol or pure water and to corrode again, and ultrasonic 2-10min after the taking-up, washes with ultra-pure water.
The deposition growing of c, nanocrystalline/quantum dot
Pretreated silica-based battery sheet vertically put into fast mixed cadmium sulfate, copper sulphate and vulcanized sodium mixed solution, lift taking-up behind the 2-5min, at 30-80
OC is heating 2-5min down, and pure water spray 2min is operating as a circulation like this; After 2-5 the circulation like this, silica-based battery sheet is taken out, at 100-500
OHeat treated 5-15min in the C scope behind taking-up and the natural cooling, with a large amount of ultra-pure water flushings, washes bulky grain and impurity on the silica-based battery sheet off, and then puts into baking oven, at 100-300
ODry 5-10min under the C condition.
Above embodiment just further specifies the present invention, is not in order to restriction patent of the present invention, and is all for the present invention's equivalence enforcement, all should be contained within the claim scope of patent of the present invention.
Claims (6)
1. nanocrystalline/quantum dot sensitized silica-based battery sheet is characterized in that: silica-based battery sheet surface compact, be distributed with nanocrystalline/quantum dot equably, and nanocrystalline/quantum dot combines firmly with silica-based battery sheet; Said nanocrystalline/quantum dot be for making the nano particle of transition metal chalcogenide of semi-conducting material.
Claim 1 described nanocrystalline/preparation method of quantum dot sensitized silica-based battery sheet, it is characterized in that may further comprise the steps:
A. synthetic method prepares nanocrystalline/quantum dot in advance
Source metal is with acetate or sulfate or the nitrate or the chlorate of transition metal; The sulphur source is vulcanized sodium or ammonium sulfide or thioacetamide or thiocarbamide or sodium thiosulfate; Prepare source metal and sulphur source solution respectively, with the ratio 1:1-1:3 in sulphur source it is mixed, and add surfactant, stir, the control grain growth with source metal;
The preliminary treatment of b. silica-based battery sheet
Earlier silica-based battery sheet is put into absolute ethyl alcohol, acetone or aqueous solvent supersound washing 1-15min, after the water flushing, 30-60
OUnder the C condition, with distilled water, H
2O
2, ammoniacal liquor mixed solution clean 5-15min, distilled water, H
2O
2, ammoniacal liquor ratio be 2:1:1-9:1:1, and then put into the hydrofluoric acid solution that is diluted to 5%-30% with ethanol or water and corrode 3-15min, after the taking-up, wash with ultra-pure water;
C. the deposition growing of nanocrystalline/quantum dot on silica-based battery sheet
Pretreated silica-based battery sheet is vertically put into the solution that has mixed fast, lift taking-up behind the 2-5min, at 30-60
OC is heating 2-5min down, and pure water spray 2min is operating as a circulation like this; After 2-5 the circulation like this, silica-based battery sheet is taken out, at 100-500
OHeat treated 2-15min in the C scope behind taking-up and the natural cooling, with a large amount of ultra-pure water flushings, washes bulky grain and impurity on the silica-based battery sheet off, and then puts into baking oven, at 100-300
ODry 2-15min under the C condition.
3. according to claim 1 nanocrystalline/quantum dot sensitized silica-based battery sheet or according to claim 2 nanocrystalline/preparation method of quantum dot sensitized silica-based battery sheet, it is characterized in that: said transition metal is one or more of copper, lead, tin, zinc, molybdenum, iron, antimony, bismuth, cadmium, silver, nickel, cobalt.
4. according to claim 1 nanocrystalline/quantum dot sensitized silica-based battery sheet or according to claim 2 nanocrystalline/preparation method of quantum dot sensitized silica-based battery sheet, it is characterized in that: said silica-based battery sheet is monocrystalline silicon, polysilicon, amorphous silicon or microcrystalline silicon solar cell sheet.
5. according to claim 1 nanocrystalline/quantum dot sensitized silica-based battery sheet or according to claim 2 nanocrystalline/preparation method of quantum dot sensitized silica-based battery sheet, it is characterized in that: said nanocrystalline/quantum dot is the nano particle of copper sulfide, vulcanized lead, artificial gold, zinc sulphide, molybdenum sulfide, iron sulfide, antimony trisulfide, bismuth sulfide, cadmium sulfide, silver sulfide, nickel sulfide, cobalt sulfide, cadmium selenide, lead selenide.
6. according to claim 2 nanocrystalline/preparation method of quantum dot sensitized silica-based battery sheet, it is characterized in that: the concentration of said source metal solution is 0.01-0.15mol/l, the concentration of said sulphur source solution is 0.01-0.45mol/l.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101673778A (en) * | 2009-10-13 | 2010-03-17 | 华东师范大学 | Film solar battery |
| CN102184978A (en) * | 2011-02-28 | 2011-09-14 | 上海师范大学 | Crystalline silicon material sensitized by semiconductor nano crystal/quantum dots and preparation method thereof |
| CN102184979A (en) * | 2011-02-28 | 2011-09-14 | 上海师范大学 | Sedimentation growing method of semiconductor nanocrystalline/quantum dots on single crystal silicon material |
-
2012
- 2012-06-20 CN CN201210204024XA patent/CN102723388A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101673778A (en) * | 2009-10-13 | 2010-03-17 | 华东师范大学 | Film solar battery |
| CN102184978A (en) * | 2011-02-28 | 2011-09-14 | 上海师范大学 | Crystalline silicon material sensitized by semiconductor nano crystal/quantum dots and preparation method thereof |
| CN102184979A (en) * | 2011-02-28 | 2011-09-14 | 上海师范大学 | Sedimentation growing method of semiconductor nanocrystalline/quantum dots on single crystal silicon material |
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