CN103928571A - Semiconductor metallic oxide nanocrystalline whiskers/crystalline silicon cell piece and preparing method of semiconductor metallic oxide nanocrystalline whiskers/crystalline silicon cell piece - Google Patents
Semiconductor metallic oxide nanocrystalline whiskers/crystalline silicon cell piece and preparing method of semiconductor metallic oxide nanocrystalline whiskers/crystalline silicon cell piece Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 10
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract description 11
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 40
- 229910052710 silicon Inorganic materials 0.000 claims description 37
- 239000010703 silicon Substances 0.000 claims description 37
- 238000002360 preparation method Methods 0.000 claims description 35
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 22
- 150000004706 metal oxides Chemical class 0.000 claims description 21
- 239000000243 solution Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910002651 NO3 Inorganic materials 0.000 claims description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000011259 mixed solution Substances 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 238000009776 industrial production Methods 0.000 abstract description 3
- 239000002994 raw material Substances 0.000 abstract description 2
- 230000003197 catalytic effect Effects 0.000 abstract 1
- 238000006479 redox reaction Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000007788 liquid Substances 0.000 description 6
- 239000002784 hot electron Substances 0.000 description 4
- 238000013082 photovoltaic technology Methods 0.000 description 4
- 238000001291 vacuum drying Methods 0.000 description 4
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 2
- 239000002159 nanocrystal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses semiconductor metallic oxide nanocrystalline whiskers/ a crystalline silicon cell piece and a preparing method of the semiconductor metallic oxide nanocrystalline whiskers/ the crystalline silicon cell piece. The method has the advantages that the manufacturing technology is simple and is conducted fast, the surface appearance of the obtained crystalline silicon cell piece is stable and controllable; the luminous reflectance can be greatly reduced, and the photoelectric converting efficiency of the crystalline silicon solar cell is improved; the raw materials are easy to obtain, no pollution is produced in the manufacturing process, the efficiency is high, and the method is suitable for large-scale industrial production. According to the method, catalytic redox reaction is generated between metal ions and the coarse crystalline silicon cell piece surface in a high-corrosive medium, the even and controllable nanocrystalline whiskers are formed, and accordingly the absorption efficiency of the crystalline silicon cell piece, the open-circuit voltage, the short-circuit current and the fill factors are improved, and the photoelectric converting efficiency of the crystalline silicon cell piece is greatly improved.
Description
Technical field
The present invention relates to solar cell and photoelectric nano Material Field, specifically a kind of metal oxide semiconductor nano whisker/crystal-silicon battery slice and preparation method thereof.
Background technology
Photovoltaic technology is generation of electricity by new energy technology most with prospects.In past 10 years, global photovoltaic generation average annual growth rate reaches 50%.Also can grow by development decades from now on, and finally become the main body of mankind's energy.Can say whose real photovoltaic technology of grasping, who will grasp the initiative of future source of energy.China is the first big producing country of world's photovoltaic, and 2012 annual productions reach 21GW, and output accounts for 63% of global photovoltaic industry; Installed capacity surpasses 3.5GW, is only second to Germany, and be expected to surpass Germany this year, becomes the first in the world.From Future in China socio-economic development strategy path, development photovoltaic industry is that China ensures energy supply, builds low-carbon (LC) society, promotes economic restructuring, cultivates the important directions of strategic new industry.The < < of State Council's issue points out about the some suggestion > > that promote photovoltaic industry to develop in a healthy way, more than will reaching 35GW to China's photovoltaic generation total installation of generating capacity in 2015.The Long-and Medium-term Development planning of China 2010-2050, photovoltaic generation will reach 1,000,000,000 kilowatts, is almost ten times of present domestic installed capacity.And thermal power generation will, from accounting for now 72.5% of whole supply of electric power ratio, drop to 30% left and right.Photovoltaic technology is roughly divided into crystal silicon battery technology (monocrystalline silicon, polysilicon) and hull cell (amorphous silicon film battery, cadmium telluride (CdTe) hull cell, Copper Indium Gallium Selenide (CIGS) hull cell technology) two large classes.Crystal silicon battery conversion efficiency is the highest, and technology is also ripe; Volume production solar cell more than 95% is crystal silicon battery at present, and hull cell only accounts for 5% left and right.Therefore, with regard to current actual conditions, photovoltaic technology is mainly crystal silicon battery technology (monocrystalline silicon, polysilicon), crystal silicon solar batteries is dominate in photovoltaic industry large-scale application and industrial production, and the photoelectric conversion efficiency that improves existing crystal silicon solar batteries is to reduce the most effective approach of unit cost of electricity-generating.
The dielectric constant of crystalline silicon is relatively high, and efficiency of light absorption is not high.Crystalline silicon is again the semi-conducting material of indirect gap, can be with 1.12eV, exist very large direct gap (3.4eV) and indirect gap (1.12eV) poor, significant response spectrum is 600-1100nm left and right, solar photon higher than energy gap absorbs rear hot electron and the hole of producing, by Phonon emission subsequently, these hot carriers are cooling rapidly before their energy is hunted down, cause a large amount of solar energies with the form loss of " hot electron ", limited device efficiency, so the highest theoretical transformation efficiency of single battery is approximately 31%.On the other hand, the temperature that the performance of crystal silicon battery also can cause with " hot electron " raises and declines.
In order to improve the photoelectric conversion efficiency of photovoltaic device, reduce light reflection loss, battery manufacturers adopts emitter region passivation, subregion doping, surface-texturing, surface etching, in technology such as crystal silicon material surface evaporation SiN antireflective passivating coatings, processes cell panel, has improved to a certain extent crystal silicon solar batteries optical energy utilization efficiency and photoelectric conversion efficiency.But, although evaporation SiN antireflective passivating coating cell piece is very low at 500-1050nm scope reflectivity, still very high below 500nm.The more important thing is that this pattern does not solve the loss of " hot electron " and utilizes problem.Cause crystal silicon solar batteries optical energy utilization efficiency and photoelectric conversion efficiency not to be significantly improved.At present the high conversion efficiency in laboratory is 24.7%, and large-scale production efficiency is 15% left and right.
Semiconductor nano or quantum dot (QDs) have that extinction coefficient is high, intrinsic dipole moment is large, modulation energy gap, easily produce the characteristic of multiple exciton, as light absorber, are obviously better than Organometallic dye.Research is found: quantum dot is by chemical method, and direct growth enters nano TiO 2 porous layer, and formation and dye-sensitized cell (DSSC) be QDs/TiO2 structure similarly; Due to quantum confined effect, the energy spacing between electron energy level is more much bigger than the highest Phonon frequency of lattice, and hot carrier relaxation can only produce a phonon " bottleneck " by the multi-phonon transmitting of slowing down.So semiconductor nano has the effect that slows down hot carrier cooldown rate and electronics relaxation, can make hot carrier before being cooled to band edge, they are caught to utilization, make it to improve solar battery efficiency.Can be up to 66% by the solar cell theoretical transformation efficiency of its making, the life-span reaches more than 20 years, is considered to most promising third generation solar cell.Ou Guangfu giant Isofoton is by being used laser selective reflector manufacturing process, and solar battery efficiency reaches 19.5%, and before surpassing, traditional manufacturing technology peak efficiency is nearly half percentage point; The people such as the Yeonwoong Jung of Yale University deposit one deck single armed carbon nano-tube on n-Si sheet, and battery efficiency is brought up to approximately 12% by original 11%.
Summary of the invention
The present invention adopts a kind of simple and quick chemical deposition process method in superficial growth a layer thickness of crystal silicon (monocrystalline silicon, polysilicon) cell piece, to be about the metal oxide semiconductor nano whisker of 20-100nm, the heterostructure that the p-n junction interface formation physical and chemical performance of this nano whisker and crystal-silicon battery slice is stable, safe, has significantly improved the electricity conversion of the absorption efficiency of cell piece, the concentration of photo-generated carrier and crystal silicon solar batteries.Growing semiconductor metallic oxide nanocrystal must cell piece at the reflectivity in whole solar spectrum district (ultraviolet-visible-near-infrared) lower than the cell piece that is coated with antireflective film.This technology does not change the manufacture craft of existing crystal silicon solar batteries, and cost is low, pollution-free, is applicable to large-scale industrial production, extremely rising.
A kind of metal oxide semiconductor nano whisker/crystal-silicon battery slice and preparation method thereof, comprises the following steps:
1) preparation of source metal solution: preparing metal ion concentration is 0.0001～1mol/L, the source metal solution that hydrofluoric acid concentration is 0.05～5mol/L;
2) whisker is controlled growth: hydrofluoric acid/hydrogen peroxide solution of preparation 0.05～5mol/L;
3) preliminary treatment of crystal-silicon battery slice: the crystal-silicon battery slice of carrying out p-n junction is immersed to 1～300s in source metal solution, take out, drain; Immerse again 1～300s in hydrofluoric acid/hydrogen peroxide of 0.05～5mol/L, take out, with washed with de-ionized water 1～5min; Dry up;
4) heat treatment: use 120 ℃～240 ℃, baking oven to process 1～10min.
Source metal in step (1) is a kind of in chloride, acetate or the nitrate of copper, silver, platinum or antimony.
Described whisker is controlled growth course and is carried out in the mixed solution of hydrofluoric acid and hydrogen peroxide.
Described crystal-silicon battery slice is a kind of in monocrystalline silicon, polysilicon and amorphous silicon.
Metal oxide semiconductor nano whisker/crystal-silicon battery slice surface uniform of preparation, metal oxide semiconductor nano whisker thickness is 10～100nm, pattern is controlled.
Metal oxide semiconductor nano whisker/crystal-silicon battery slice that the present invention proposes and preparation method thereof, has the following advantages and feature:
A) the prepared nanocrystal silicon solar cell material surface topography of the present invention is even, and good stability;
B) process operation simple and fast of the present invention, raw material is easy to get; Experimental implementation condition is easily controlled, and has good industrial large-scale application prospect;
C) prepared by the present invention nanocrystalline have well fall into luminous effect, can obviously improve the absorption efficiency of photon, reduce light reflectivity;
D) metal oxide semiconductor nano whisker/crystal-silicon battery slice of preparing can significantly improve open circuit voltage, short circuit current, fill factor, curve factor and the electricity conversion of battery.
Accompanying drawing explanation
Fig. 1 is embodiment 1 metal oxide semiconductor nano whisker/crystal-silicon battery slice FESEM plane picture.
Fig. 2 is embodiment 1 metal oxide semiconductor nano whisker/crystal-silicon battery slice FESEM cross-section image.
Fig. 3 is the absorbability spectrogram of embodiment 1 metal oxide semiconductor nano whisker/crystal-silicon battery slice.
Fig. 4 is the reverberation spectrogram of embodiment 1 metal oxide semiconductor nano whisker/crystal-silicon battery slice.
Fig. 5 is the photoelectric properties figure of embodiment 1 metal oxide semiconductor nano whisker/crystal-silicon battery slice.
Embodiment
Below by embodiment, the invention will be further described, and its object is only better to understand content of the present invention but not limits the scope of the invention.
Embodiment 1
The preparation method of metal oxide semiconductor nano whisker/crystal-silicon battery slice that the present embodiment provides, concrete steps are as follows:
(a) the source metal solution of preparation 0.001mol/L; Weigh Schweinfurt green, add the hydrofluoric acid of a certain amount of distilled water and 40%; Making Schweinfurt green concentration is 0.001mol/L, and hydrofluoric acid concentration is 5.0mol/L.
(b) preparation corrosive liquid; Weigh a certain amount of hydrofluoric acid and hydrogen peroxide and add distilled water to add; Prepare to such an extent that hydrofluoric acid concentration is 5.0mol/L, hydrogen peroxide concentration is 0.7mol/L.
(c) cell piece is immersed to 15s in source metal solution, take out, drain; Immerse again 15s in corrosive liquid, take out, use washed with de-ionized water 1min; With hair-dryer, dry up surface.
(d) use 180 ℃ of heat treatment 5min of vacuum drying chamber.
Embodiment 2
The preparation method of the present embodiment is identical with embodiment 1, and difference is step (a), and source metal solution is silver ion solution, and concentration is 0.001mol/L.
Embodiment 3
The preparation method of the present embodiment is identical with embodiment 1, and difference is step (a), the solution that source metal solution is platinum, and concentration is 0.001mol/L.
Embodiment 4
The preparation method of the present embodiment is identical with embodiment 1, and difference is step (a), the solution that source metal solution is antimony, and concentration is 0.001mol/L.
Embodiment 5
The preparation method of the present embodiment is identical with embodiment 1, and difference is that step (a) weighs Schweinfurt green, and preparation Schweinfurt green concentration is 0.005mol/L.
Embodiment 6
The preparation method of the present embodiment is identical with embodiment 1, and difference is that step (a) weighs Schweinfurt green, and preparation Schweinfurt green concentration is 0.01mol/L.
Embodiment 7
The preparation method of the present embodiment is identical with embodiment 1, and difference is that step (a) adds 40% hydrofluoric acid, and making hydrofluoric acid concentration is 2mol/L.
Embodiment 8
The preparation method of the present embodiment is identical with embodiment 1, and difference is that step (a) adds 40% hydrofluoric acid, and making hydrofluoric acid concentration is 3.5mol/L.
Embodiment 9
The preparation method of the present embodiment is identical with embodiment 1, and difference is that step (b) adds hydrofluoric acid and hydrogen peroxide, and the concentration that makes hydrofluoric acid is 2mol/L, and the concentration of hydrogen peroxide is 0.2mol/L.
Embodiment 10
The preparation method of the present embodiment is identical with embodiment 1, and difference is that step (b) adds hydrofluoric acid and hydrogen peroxide, and the concentration that makes hydrofluoric acid is 3.5mol/L, and the concentration of hydrogen peroxide is 0.5mol/L.
Embodiment 11
The preparation method of the present embodiment is identical with embodiment 1, and difference is that step (c) immerses 10s in source metal solution by cell piece, takes out, and drains; Immerse again 10s in corrosive liquid.
Embodiment 12
The preparation method of the present embodiment is identical with embodiment 1, and difference is that step (c) immerses 20s in source metal solution by cell piece, takes out, and drains; Immerse again 20s in corrosive liquid.
Embodiment 13
The preparation method of the present embodiment is identical with embodiment 1, and difference is that step (c) immerses 20s in source metal solution by cell piece, takes out, and drains; Immerse again 30s in corrosive liquid.
Embodiment 14
The preparation method of the present embodiment is identical with embodiment 1, and difference is that step (c) immerses 30s in source metal solution by cell piece, takes out, and drains; Immerse again 30s in corrosive liquid.
Embodiment 15
The preparation method of the present embodiment is identical with embodiment 1, and difference is 120 ℃ of heat treatment 10min of step (d) use vacuum drying chamber.
Embodiment 16
The preparation method of the present embodiment is identical with embodiment 1, and difference is 150 ℃ of heat treatment 8min of step (d) use vacuum drying chamber.
Embodiment 17
The preparation method of the present embodiment is identical with embodiment 1, and difference is 200 ℃ of heat treatment 3min of step (d) use vacuum drying chamber.
The above is preferred embodiment of the present invention, but the present invention should not be confined to the disclosed content of this embodiment.So every, do not depart from the equivalence completing under principles of this disclosure or revise, all falling into the scope of protection of the invention.
Claims (5)
1. a preparation method for metal oxide semiconductor nano whisker/crystal-silicon battery slice, is characterized in that, comprises the following steps:
1) preparation of source metal solution: preparing metal ion concentration is 0.0001～1mol/L, the source metal solution that hydrofluoric acid concentration is 0.05～5mol/L;
2) whisker is controlled growth: hydrofluoric acid/hydrogen peroxide solution of preparation 0.05～5mol/L;
3) preliminary treatment of crystal-silicon battery slice: the crystal-silicon battery slice of carrying out p-n junction is immersed to 1～300s in source metal solution, take out, drain; Immerse again 1～300s in hydrofluoric acid/hydrogen peroxide of 0.05～5mol/L, take out, with washed with de-ionized water 1～5min; Dry up;
4) heat treatment: use 120 ℃～240 ℃, baking oven to process 1～10min.
2. the preparation method of metal oxide semiconductor nano whisker/crystal-silicon battery slice according to claim 1, is characterized in that: the source metal in step (1) is a kind of in chloride, acetate or the nitrate of copper, silver, platinum or antimony.
3. the preparation method of metal oxide semiconductor nano whisker/crystal-silicon battery slice according to claim 1, is characterized in that: described whisker is controlled growth course and carried out in the mixed solution of hydrofluoric acid and hydrogen peroxide.
4. the preparation method of metal oxide semiconductor nano whisker/crystal-silicon battery slice according to claim 1, is characterized in that: described crystal silicon material is a kind of in monocrystalline silicon, polysilicon and amorphous silicon.
5. metal oxide semiconductor nano whisker/crystal-silicon battery slice of preparing according to the method described in claim 1-4 any one, it is characterized in that: metal oxide semiconductor nano whisker/crystal-silicon battery slice surface uniform of preparation, metal oxide semiconductor nano whisker thickness is 10～100nm, and pattern is controlled.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410158073.3A CN103928571B (en) | 2014-04-18 | 2014-04-18 | A kind of metal oxide semiconductor nano whisker/crystal-silicon battery slice and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410158073.3A CN103928571B (en) | 2014-04-18 | 2014-04-18 | A kind of metal oxide semiconductor nano whisker/crystal-silicon battery slice and preparation method thereof |
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| CN103928571A true CN103928571A (en) | 2014-07-16 |
| CN103928571B CN103928571B (en) | 2016-09-07 |
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| CN101840953A (en) * | 2009-03-18 | 2010-09-22 | 中国科学院微电子研究所 | Method for preparing surface hybrid modulation crystal silicon solar battery |
| US20100288345A1 (en) * | 2009-05-18 | 2010-11-18 | Industrial Technology Research Institute | Quantum dot thin film solar cell |
| CN102694048A (en) * | 2012-06-08 | 2012-09-26 | 上海师范大学 | Metal sulfide nanocrystalline sensitized crystal silicon cell piece and preparation method thereof |
| CN102723388A (en) * | 2012-06-20 | 2012-10-10 | 上海洪立新能源科技有限公司 | Nanocrystalline/quantum dot sensitive silicon substrate battery piece and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101840953A (en) * | 2009-03-18 | 2010-09-22 | 中国科学院微电子研究所 | Method for preparing surface hybrid modulation crystal silicon solar battery |
| US20100288345A1 (en) * | 2009-05-18 | 2010-11-18 | Industrial Technology Research Institute | Quantum dot thin film solar cell |
| CN102694048A (en) * | 2012-06-08 | 2012-09-26 | 上海师范大学 | Metal sulfide nanocrystalline sensitized crystal silicon cell piece and preparation method thereof |
| CN102723388A (en) * | 2012-06-20 | 2012-10-10 | 上海洪立新能源科技有限公司 | Nanocrystalline/quantum dot sensitive silicon substrate battery piece and preparation method thereof |
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