CN103268906B - Cadmium sulphide membrane and there is the preparation method of the solar cell of cadmium sulphide membrane - Google Patents
Cadmium sulphide membrane and there is the preparation method of the solar cell of cadmium sulphide membrane Download PDFInfo
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- CN103268906B CN103268906B CN201310194072.XA CN201310194072A CN103268906B CN 103268906 B CN103268906 B CN 103268906B CN 201310194072 A CN201310194072 A CN 201310194072A CN 103268906 B CN103268906 B CN 103268906B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides the preparation method of a kind of cadmium sulphide membrane, comprises step: provide cadmium sulphide membrane; Cadmium sulphide membrane is formed Cadmium chloride film; And heat-treat in Cadmium chloride atmosphere. By above preparation method, efficiently reduce the oxidation of cadmium sulphide membrane, the cadmium sulphide membrane obtained transverse crystallizing on substrate, and crystal grain close-packed arrays. When being applied in cadmium telluride solar cell, the energy gap making film keep higher, decreases the possibility of battery short circuit, and further increases the short-circuit current of battery, the collection effciency of current carrier and the quality of battery P-N junction, thus improve the efficiency of conversion of solar cell.
Description
Technical field
The present invention relates to field of semiconductor materials, in particular to the preparation method of cadmium sulphide membrane and the solar cell with cadmium sulphide membrane.
Background technology
Cadmium Sulfide CdS belongs to II-IV compounds of group, it it is direct band-gap semicondictor, monocrystalline forbidden band band gap width is 2.45eV, belong to wide band gap semiconducter, ABSORPTION EDGE wavelength is about 512nm, allows major part visible ray to pass through, the therefore Window layer of Chang Zuowei solar cell, it is applied in thin-film solar cells, such as cadmium telluride and copper-indium-galliun-selenium film solar cell. How preparing high quality CdS film is that it obtains the crucial Science and Technology problem of widespread use. In the application of cadmium telluride solar cell, usually taking the good Cadmium Sulfide of light transmission (CdS) as Window layer so that it is form hetero-junction thin-film battery with CdTe, preparing high-quality CdS film is the key obtaining high conversion efficiency battery.
Cadmium telluride (CdTe) is a kind of II-VI group compound semiconductor, is subject to extensive concern as a kind of thin-film solar cells material with application prospect. This is the two big characteristics due to CdTe: first, its energy gap is 1.45eV, the response of solar spectrum is in optimal solar spectrum wave band, it is that the unijunction thin-film solar cells of absorption layer just can obtain higher efficiency of conversion taking CdTe, its theoretical transformation efficiency is up to 30%, and the most high conversion efficiency in its laboratory reaches 16.5% at present; Secondly, the uptake factor of CdTe at visible-range up to 105cm-1, in sunlight, 99% energy can be absorbed higher than the photon of CdTe energy gap in the absorption layer of 2 micron thickness, and CdTe is as the solar cell of absorption layer, and absorption layer desired thickness is at several microns in theory, and materials consumption is few, and battery cost is low.
Usually, owing to the thickness of Window layer CdS film is generally at 100-300 nanometer, the CdS crystal property of preparation is poor, and film grain-size is little, and particle diameter generally only has tens nanometers, even there is amorphous CdS cluster. Especially after subsequent growth CdTe absorption layer, poor with the lattice match of CdTe high crystalline film, device interfaces shape looks and photoelectric properties are poor. Owing to CdS crystal property is poor, in film, defect concentration is relatively big, thus causes the electric leakage of battery P-N junction district to increase, and affects the short-circuit current of CdTe thin film solar cell, open circuit voltage and packing factor. In thermomechanical property, owing to prefabricated CdS membrane crystallization is not good, crystal grain is less, surface energy is higher, grow near space in the hot environment of CdTe thin film easily and CdTe react, cause occurring between CdS and CdTe layer excess diffusion, affect heterojunction quality. Therefore improve CdS film crystal property, improve Film Optics and electric property most important for raising CdTe thin film solar cell properties simultaneously.
Summary of the invention
The present invention is intended at least solve one of above-mentioned technological deficiency, it is provided that form the method for high quality CdS film.
In order to realize above object, the present invention provides following technical scheme:
A preparation method for cadmium sulphide membrane in cadmium telluride solar cell, comprises step:
Cadmium sulphide membrane is provided;
Cadmium sulphide membrane is prepared Cadmium chloride film; And
Cadmium chloride atmosphere is heat-treated; Remove the Cadmium chloride film of residual.
Can selection of land, adopt the method for crystal pulling method or physical vapor deposition to form Cadmium chloride film on cadmium sulphide membrane.
Can selection of land, the step heat-treated in Cadmium chloride atmosphere is specially: lead to into Cadmium chloride gas, to heat-treat in Cadmium chloride atmosphere.
Can selection of land, the step heat-treated in Cadmium chloride atmosphere is specially: heating Cadmium chloride generates Cadmium chloride atmosphere, and heat-treats wherein.
Can selection of land, cadmium sulphide membrane forms Cadmium chloride film, and the step heat-treated in Cadmium chloride atmosphere is specially:
Cadmium sulphide membrane carries out Cadmium chloride by physical evaporation method and steams plating, form Cadmium chloride film;
Original position evaporation Cadmium chloride is also heat-treated.
Can selection of land, the thickness range of described Cadmium chloride film is 10-300nm.
Can selection of land, described heat treated temperature range is 350-450 DEG C, and described heat treated time range is 30 seconds-60 minutes, and described heat treated carrier gas is the mixed gas of rare gas element and oxygen, and air pressure range is 2-101kPa, and oxygen partial pressure is less than 50%.
Can selection of land, described heat treated temperature range is 390-430 DEG C, and described heat treated time range is 10-30 minute, and described heat treated carrier gas is the mixed gas of rare gas element and oxygen, and air pressure range is 2-50kPa, and oxygen partial pressure is less than 50%.
Can selection of land, utilize deionized water to rinse, remove with the Cadmium chloride film that will remain on cadmium sulphide membrane.
In addition, present invention also offers the method utilizing aforesaid method to prepare solar cell, comprising: prepare cadmium sulphide membrane according to above-mentioned arbitrary preparation method; Described cadmium sulphide membrane is formed cadmium telluride absorption layer, buffer layer and back-contact electrode successively.
The preparation method of the cadmium sulphide membrane that the embodiment of the present invention provides, after cadmium sulphide membrane is formed Cadmium chloride film, the atmosphere of Cadmium chloride has carried out thermal treatment, after this thermal treatment process, efficiently reduce the oxidation of cadmium sulphide membrane, the cadmium sulphide membrane obtained transverse crystallizing on the surface of a substrate, and crystal grain close-packed arrays. When being applied in cadmium telluride solar cell, make the energy gap that film keeps higher, reduce the possibility of battery short circuit and improve the short-circuit current of battery further, improve the collection effciency of current carrier and the quality of battery P-N junction simultaneously, thus improve the efficiency of conversion of solar cell.
Accompanying drawing explanation
The present invention above-mentioned and/or additional aspect and advantage will become obviously with it should be readily understood that wherein from the following description of the accompanying drawings of embodiments:
Fig. 1 shows the structural representation of existing cadmium telluride solar cell;
Fig. 2 shows the schema of the preparation method of cadmium sulphide membrane in cadmium telluride solar cell according to embodiments of the present invention;
Fig. 3 is the schematic diagram of the preparation method of the cadmium sulphide membrane of the embodiment of the present invention;
Fig. 4 is the thermal treatment schematic diagram of the cadmium sulphide membrane of one embodiment of the invention;
Fig. 5 is the thermal treatment schematic diagram of the cadmium sulphide membrane of further embodiment of this invention;
Fig. 6 a be the cadmium sulphide membrane of one embodiment of the invention thermal treatment before photo under a scanning electron microscope;
Fig. 6 b is photo under a scanning electron microscope after the cadmium sulphide membrane thermal treatment in Fig. 6 a;
Fig. 7 is the cadmium telluride solar cell of the cadmium sulphide membrane with the present invention current-voltage curve comparison diagram under standard test condition.
Embodiment
Being described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish. It is exemplary below by the embodiment being described with reference to the drawings, only for explaining the present invention, and limitation of the present invention can not be interpreted as.
Shown in figure 1, the structure of common cadmium telluride solar cell mainly comprises glass 2, oxidic, transparent, conductive layers (TCO) 3, Window layer 4, absorption layer 5 and buffer layer 6 and back-contact electrode 7 successively, Window layer is CdS film n-type semiconductor, absorption layer is CdTe thin film p-type semiconductor, sunlight 1 is entered by glass impinge, through TCO, then enter CdS/CdTep-n knot. Wherein, the crystal property of CdS film is most important to solar cell properties.
In order to improve the crystal property of CdS film, the present invention proposes the preparation method of a kind of cadmium sulphide membrane, as shown in Figure 2, comprise step: S01, it is provided that cadmium sulphide membrane; S02, prepares Cadmium chloride film on cadmium sulphide membrane; And S03, heat-treat in Cadmium chloride atmosphere. The crystal property of Cadmium chloride film is improved by heat treatment step.
In order to understand the present invention better, below with reference to accompanying drawing, different embodiments of the invention are described in detail.
Embodiment one
In this embodiment, shown in figure 3 and Fig. 4, in step S01, it is provided that cadmium sulphide membrane 130.
This cadmium sulphide membrane 130 can be performed thin film, and it is prefabricated on substrate 110 and tco layer 120, and this substrate 110 is light-transmissive substrates, such as glass substrate. Usually, this cadmium sulphide membrane 130 had carried out pre-wash step, as utilized deionized water to rinse, and used high-purity N2Carried out blowing dry.
Then, in step S02, cadmium sulphide membrane 130 forms Cadmium chloride (CdCl2) film 140.
In the present embodiment, it is possible to adopt the method such as crystal pulling method or physical vapor deposition to form Cadmium chloride film 140. Crystal pulling method is immersed in the solution containing Cadmium chloride by cadmium sulphide membrane, then cadmium sulphide membrane is lifted out solution, in an embodiment, it is possible to cadmium sulphide membrane is immersed in CdCl2In saturated methanol solution, and sample is vertically lifted out solution, owing to the evaporation rate of methyl alcohol is very fast, on cadmium sulphide membrane, when lifting complete, define one layer of CdCl2Film. CdCl2The deposition method of film can with physical vaporous deposition, such as thermal evaporation, close spaced sublimation method, gas-phase transport and deposition, magnetron sputtering etc. CdCl2Film thickness is about 10-200nm.
Then, in step S03, heat-treat in Cadmium chloride atmosphere 150.
In the present embodiment, with reference to figure 4, first above-mentioned device is placed on the well heater 102 of thermal treatment unit 101, then closes the cavity of thermal treatment unit 101, and vacuumize, be evacuated to air pressure lower than 5 �� 10-3During Pa, start to heat-treat. During thermal treatment, lead to into CdCl2Gas and carrier gas, carrier gas can be oxygen and rare gas element mixed gas, and air pressure can be 2-101kPa, and by device heats to 350 450 DEG C, oxygen partial pressure is 0-50%, and the flow of gas is determined by cavity volume and device size, thermal treatment 30 seconds-60 minutes. Stop leading to into carrier gas and CdCl2Gas, stops being heated by sample. Open cavity after naturally cooling and take out device. In preferred embodiment, when thermal treatment, adopting following processing condition: air pressure 2-50kPa, temperature is 390 430 DEG C, and the time is 10-30 minute.
Finally, in step S04, remove the Cadmium chloride film of Cadmium Sulfide remained on surface.
Can using deionized water rinsing cadmium sulphide membrane, be removed by the Cadmium chloride film of its remained on surface, nitrogen blows dry, obtains high-quality cadmium sulphide membrane.
When being applied in solar cell, it is possible to proceed subsequent step prepared by cadmium telluride solar cell, Cadmium Sulfide forms the step of cadmium telluride absorption layer, buffer layer and back-contact electrode or other necessity successively.
So far, complete the cadmium telluride solar battery structure of the embodiment of the present invention one.
Embodiment two
In this embodiment, referring to figs. 2 and 5 shown, in step S01, it is provided that cadmium sulphide membrane 130.
This cadmium sulphide membrane 130 can be performed thin film, and it is prefabricated on substrate 110 and tco layer 120, and this substrate 110 is light-transmissive substrates, such as glass substrate. Usually, this cadmium sulphide membrane 130 had carried out pre-wash step, as utilized deionized water to rinse, and used high-purity N2Carried out blowing dry.
Then, in step S02, cadmium sulphide membrane 130 is prepared Cadmium chloride (CdCl2) film 140.
In the present embodiment, it is possible to the method such as crystal pulling method or physical vapor deposition of employing prepares Cadmium chloride film 140. Crystal pulling method is immersed in the solution containing Cadmium chloride by cadmium sulphide membrane, then cadmium sulphide membrane is lifted out solution, in an embodiment, it is possible to cadmium sulphide membrane is immersed in CdCl2In saturated methanol solution, and sample is vertically lifted out solution, owing to the evaporation rate of methyl alcohol is very fast, on cadmium sulphide membrane, when lifting complete, define one layer of CdCl2Film. CdCl2The deposition method of film can with physical vaporous deposition, such as thermal evaporation, close spaced sublimation method, gas-phase transport and deposition, magnetron sputtering etc. CdCl2Film thickness is about 10-200nm.
Then, in step S03, heat-treat in Cadmium chloride atmosphere 150.
In this embodiment, evaporate Cadmium chloride powder by method of evaporation and produce Cadmium chloride atmosphere. Shown in figure 5, it is possible to heat-treat in vacuum vaporation system 201, above-mentioned device is placed on well heater 202, in evaporation crucible 203, adds pure CdCl2Powder 204. Then close the cavity of vacuum vaporation system, and vacuumize, be evacuated to air pressure lower than 5 �� 10-3During Pa, lead to into CdCl2Gas and carrier gas, carrier gas can be the mixed gas of oxygen and rare gas element, air pressure is 2-101kPa, and device and crucible are heated simultaneously, by device heats to 350 450 DEG C, oxygen partial pressure is 0-50%, and the flow of gas is determined by cavity volume and device size, thermal treatment 30 seconds-60 minutes. Stop leading to into gas, stop being heated by sample. Open cavity after naturally cooling and take out device. In preferred embodiment, when thermal treatment, adopting following processing condition: air pressure 2-50kPa, temperature is 390 430 DEG C, and the time is 10-30 minute.
Finally, in step S04, remove the Cadmium chloride film of Cadmium Sulfide remained on surface.
Can using deionized water rinsing cadmium sulphide membrane, be removed by the Cadmium chloride film of its remained on surface, nitrogen blows dry, obtains high-quality cadmium sulphide membrane.
When being applied in solar cell, it is possible to proceed subsequent step prepared by cadmium telluride solar cell, Cadmium Sulfide forms the step of cadmium telluride absorption layer, buffer layer and back-contact electrode or other necessity successively.
So far, complete the cadmium telluride solar battery structure of the embodiment of the present invention two.
Embodiment three
In this embodiment, shown in figure 4, in step S01, it is provided that cadmium sulphide membrane 130.
This cadmium sulphide membrane 130 is performed thin film, and it is prefabricated on substrate 110 and tco layer 120, and this substrate 110 is light-transmissive substrates, such as glass substrate. Usually, this cadmium sulphide membrane 130 had carried out pre-wash step, as utilized deionized water to rinse, and used high-purity N2Carried out blowing dry.
Then, in step S02 and step S03, cadmium sulphide membrane 130 forms Cadmium chloride (CdCl2) film 140 and heat-treating in Cadmium chloride atmosphere 150.
In this embodiment, CdCl is evaporated by physical evaporation method2, Cadmium Sulfide is formed CdCl2Film, original position is heat-treated then.
Specifically, shown in figure 5, now above-mentioned device is placed on the well heater 202 of vacuum vaporation system 201, in evaporation crucible 203, adds pure CdCl2Powder 204, CdCl2The amount of powder is determined by vacuum cavity and sample size. Then, vacuum system is vacuumized, when air pressure is lower than 5 �� 10-3During Pa, evaporation crucible is heated, evaporation CdCl wherein2Depositing to sample surfaces, its thickness is about 10-200nm. CdCl2After thin film deposition, original position is heat-treated, and namely still in this device, continues evaporation CdCl2Powder, to produce CdCl2Gas, leads to into the mixed gas of argon gas or other rare gas elementes and oxygen, and air pressure can be 2-101kPa, and oxygen partial pressure is 0-50%. Substrate and crucible being heated, underlayer temperature is 350 450 DEG C simultaneously, and heat treatment time is 30 seconds-60 minutes. Thermal treatment stops heating after completing, and stops leading to into gas, takes out device after naturally cooling. In preferred embodiment, when thermal treatment, adopting following processing condition: air pressure 2-50kPa, temperature is 390 430 DEG C, and the time is 10-30 minute.
Finally, in step S04, remove the Cadmium chloride film of Cadmium Sulfide remained on surface.
Can using deionized water rinsing cadmium sulphide membrane, be removed by the Cadmium chloride film of its remained on surface, nitrogen blows dry, obtains high-quality cadmium sulphide membrane.
When being applied in solar cell, it is possible to proceed the subsequent step of cadmium telluride solar cell, Cadmium Sulfide forms the step of cadmium telluride absorption layer, buffer layer and back-contact electrode or other necessity successively.
So far, complete the cadmium telluride solar battery structure of the embodiment of the present invention three.
In order to understand the effect of the present invention better, it is described below in conjunction with experimental data. To be formed after cadmium sulphide membrane but photo under the scanning electronic microscope (SEM) do not heat-treated, the photo under scanning electronic microscope (SEM) after heat-treating with this film contrasts, and observes the change of its shape looks. It may be seen that before heat-treating, as shown in Figure 6 a, the crystal grain of CdS film is very little, and film is in indefinite form substantially, and its crystalline quality is general. After carrying out thermal treatment of the present invention, as shown in Figure 6 b, the crystal grain of CdS film crystallization obviously becomes big, crystal grain inside and surface imperfection concentration reduce, the quantity of crystal grain specific surface area and crystal particle crystal boundary also reduces greatly, and before thermal treatment, the quality of film improves greatly.
Furthermore, it may be desirable to utilize it is of the present invention through CdCl2Heat treated CdS is as Window layer, and preparation CdTe thin film solar cell, prepares CdTe thin film solar battery structure as shown in Figure 1. Electrode before electrically conducting transparent and silver paste used for back electrode being drawn wiring, measures its photovoltaic property under the sun power simulator of AM1.5, the i-v curve of this CdTe thin film solar cell recorded is as shown in Figure 7. In the figure 7, transverse axis is voltage V(mV), the longitudinal axis is current density I(mA/cm2), curve a is the I-V curve of the solar cell of the CdS film that the preparation method having and not carrying out the present invention obtains, curve b is the I-V curve of the solar cell of the CdS film that the preparation method having and carrying out the present invention obtains, can find out, the CdS obtained using the preparation method of the embodiment of the present invention as Window layer, the open circuit voltage V of the CdTe thin film solar cell of preparationOCFor 822mV, short-circuit current JSCFor 25.1mA/cm2, packing factor FF is 70.5%, and photoelectric transformation efficiency reaches 14.6%. And utilize without heat treated CdS as Window layer, the open circuit voltage V of CdTe thin film solar cell (b) of preparationOCFor 748mV, short-circuit current JSCFor 19.0mA/cm2, packing factor FF is 62.4%, and photoelectric transformation efficiency is 8.8%, this shows, utilizes CdS that the present invention obtains as Window layer, and the CdTe thin film solar cell of preparation has very high photoelectric transformation efficiency.
To sum up, compared with prior art, the embodiment of the present invention and there is CdS film prepared by the embodiment of the present invention there is following advantage:
1, the oxidation of CdS film is effectively reduced by the preparation method of the embodiment of the present invention, the heat treating method of optimization makes oxygen can only be present in film surface on a small quantity, make film keep higher energy gap, decrease the loss of the photoelectric current caused due to CdS film photoabsorption.
2, the CdS film that this thermal treatment process obtains is tended to along CdS/ substrate interface transverse crystallizing, the generation of film pin hole can also be effectively prevented when film is very thin, decrease the possibility of battery short circuit, make CdS film can adopt thinner thickness simultaneously, improve the short-circuit current of battery further.
3, the CdS film obtained by the preparation method of the embodiment of the present invention is made up of individual layer large grain size close-packed arrays, significantly reduces the quantity of crystal grain specific surface area and crystal particle crystal boundary, and simultaneously good crystallinity decreases the lattice defect of crystal grain inside. When being applied to solar cell, these 2 can be reduced photo-generated carrier effectively in the compound of CdS film and CdS/CdTe heterojunction place, it is to increase the collection effciency of photo-generated carrier, it is to increase the quality of battery P-N junction.
4, the CdS film crystal property obtained by the preparation method of the embodiment of the present invention is good, effectively having stopped the situation of the CdS film owing to more suspension key causes and CdTe thin film excess diffusion, the appropriate oxygen in surface can also effectively prevent the excessive mutual diffusion of the two simultaneously. The CdS film that this technique obtains can make CdS film and CdTe thin film mutual diffusion be in more satisfactory level, the mutual diffusion of appropriateness can reduce the lattice mismatch of the two, reduce defect density, effectively reduce the Carrier recombination in interface, when being applied to solar cell, obtained P-N junction has very high quality.
The above is only the preferred embodiment of the present invention; it is noted that for those skilled in the art, under the premise without departing from the principles of the invention; can also making some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (8)
1. the preparation method of a cadmium sulphide membrane, it is characterised in that, comprise step:
Cadmium sulphide membrane is provided;
Cadmium sulphide membrane is prepared Cadmium chloride film; And
Cadmium chloride atmosphere is heat-treated, described heat treated temperature range is 390-430 DEG C, and described heat treated time range is 10-30 minute, and described heat treated carrier gas is the mixed gas of rare gas element and oxygen, air pressure range is 2-50kPa, and oxygen partial pressure is less than 50%;
Remove the Cadmium chloride film of residual.
2. preparation method according to claim 1, it is characterised in that, adopt the method for crystal pulling method or physical vapor deposition to form Cadmium chloride film on cadmium sulphide membrane.
3. preparation method according to claim 2, it is characterised in that, the step heat-treated in Cadmium chloride atmosphere is specially: lead to into Cadmium chloride gas, to heat-treat in Cadmium chloride atmosphere.
4. preparation method according to claim 2, it is characterised in that, the step heat-treated in Cadmium chloride atmosphere is specially: heating Cadmium chloride generates Cadmium chloride atmosphere and heat-treats wherein.
5. preparation method according to claim 1, it is characterised in that, cadmium sulphide membrane forms Cadmium chloride film, and the step heat-treated in Cadmium chloride atmosphere is specially:
Cadmium sulphide membrane carries out Cadmium chloride by physical evaporation method and steams plating, form Cadmium chloride film;
Original position evaporation Cadmium chloride is also heat-treated.
6. preparation method according to any one of claim 1-5, it is characterised in that, the thickness range of described Cadmium chloride film is 10-200nm.
7. preparation method according to claim 1, it is characterised in that, utilize deionized water to rinse, remove with the Cadmium chloride film that will remain on cadmium sulphide membrane.
8. one kind has the preparation method of the solar cell of cadmium sulphide membrane, it is characterised in that, comprising:
Preparation method according to any one of claim 1-5 prepares cadmium sulphide membrane;
Described cadmium sulphide membrane is formed cadmium telluride absorption layer, buffer layer and back-contact electrode successively.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101609860A (en) * | 2009-07-16 | 2009-12-23 | 上海联孚新能源科技有限公司 | CdTe thin-film solar cells preparation method |
| CN101640233A (en) * | 2009-08-21 | 2010-02-03 | 四川阿波罗太阳能科技有限责任公司 | Device for producing CdS/CdTe solar cell by magnetron sputtering method |
| CN101820018A (en) * | 2009-02-27 | 2010-09-01 | 比亚迪股份有限公司 | Preparation method of CdS thin-film |
| CN102779864A (en) * | 2012-07-19 | 2012-11-14 | 中山大学 | Cadmium telluride thin-film battery and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101820018A (en) * | 2009-02-27 | 2010-09-01 | 比亚迪股份有限公司 | Preparation method of CdS thin-film |
| CN101609860A (en) * | 2009-07-16 | 2009-12-23 | 上海联孚新能源科技有限公司 | CdTe thin-film solar cells preparation method |
| CN101640233A (en) * | 2009-08-21 | 2010-02-03 | 四川阿波罗太阳能科技有限责任公司 | Device for producing CdS/CdTe solar cell by magnetron sputtering method |
| CN102779864A (en) * | 2012-07-19 | 2012-11-14 | 中山大学 | Cadmium telluride thin-film battery and manufacturing method thereof |
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