CN101521248B - Method for manufacturing silica-based high-efficiency double-junction solar battery - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 14
- 238000005260 corrosion Methods 0.000 claims abstract description 10
- 230000007797 corrosion Effects 0.000 claims abstract description 10
- 238000001704 evaporation Methods 0.000 claims abstract description 9
- 238000004544 sputter deposition Methods 0.000 claims abstract description 9
- 230000005684 electric field Effects 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 5
- 238000005245 sintering Methods 0.000 claims abstract description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 41
- 230000012010 growth Effects 0.000 claims description 28
- 238000002360 preparation method Methods 0.000 claims description 17
- 238000006243 chemical reaction Methods 0.000 claims description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 239000006117 anti-reflective coating Substances 0.000 claims description 9
- 239000000376 reactant Substances 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 239000004115 Sodium Silicate Substances 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 235000019795 sodium metasilicate Nutrition 0.000 claims description 3
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 238000005406 washing Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 description 19
- 238000001451 molecular beam epitaxy Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a method for manufacturing a silica-based high-efficiency double-junction solar battery. The method comprises the following steps: firstly, growing a dense and uniform woolen sThe invention discloses a method for manufacturing a silica-based high-efficiency double-junction solar battery. The method comprises the following steps: firstly, growing a dense and uniform woolen sric field form a bottom electrode which forms ohmic contact after sintering; and finally, preparing a top layer electrode on the top layer of the battery by using a magnetic control sputtering device,ric field form a bottom electrode which forms ohmic contact after sintering; and finally, preparing a top layer electrode on the top layer of the battery by using a magnetic control sputtering device, and sputtering a metal electrode on the N type surface of the top layer CaAs battery to form the ohmic contact so as to obtain the high-efficiency double-junction solar battery.and sputtering a metal electrode on the N type surface of the top layer CaAs battery to form the ohmic contact so as to obtain the high-efficiency double-junction solar battery.urface on the surface of a monocrystalline silicon piece by adopting a chemical corrosion method under a magnetic field, then diffusing the woolen surface in a high-temperature diffusion furnace to fourface on the surface of a monocrystalline silicon piece by adopting a chemical corrosion method under a magnetic field, then diffusing the woolen surface in a high-temperature diffusion furnace to form PN junctions so as to form a bottom battery; and after corrosion, removing phosphorosilicate glass on the surface of the silicon piece by washing; secondly, epitaxially growing CaAs battery by usinrm PN junctions so as to form a bottom battery; and after corrosion, removing phosphorosilicate glass on the surface of the silicon piece by washing; secondly, epitaxially growing CaAs battery by using an MBE on an N type surface of the silicon piece of the prepared the PN junctions; thirdly, evaporating an anti-reflecting film on the surface of the prepared PN junction CaAs battery; fourthly, preg an MBE on an N type surface of the silicon piece of the prepared the PN junctions; thirdly, evaporating an anti-reflecting film on the surface of the prepared PN junction CaAs battery; fourthly, preparing and forming a back electrode and a back electric field on the silicon piece P type surface of a double-layer battery by using a screen printer, and the printed back electrode and the back electparing and forming a back electrode and a back electric field on the silicon piece P type surface of a double-layer battery by using a screen printer, and the printed back electrode and the back elect
Description
Technical field:
The invention belongs to the area of solar cell of technical field of inorganic material, relate to a kind of manufacture method of silica-based high-efficiency double-junction solar battery.
Background technology:
Solar energy is a kind of cleaning, pollution-free, inexhaustible natural energy resources, and the natural resources that the mankind depend on for existence almost all is transformed in solar energy, and it is an important technology basis that utilizes solar energy on a large scale that solar energy directly is converted to electric energy.From Bell Laboratory in 1954 since to develop efficient be first polycrystalline silicon solar cell of 6%, solar cell market is with annual 35% speed increase now.
Because the conventional crystal silion cell has relative high conversion rate and relatively low cost, becomes the leading products in market gradually.As and if the hull cell of other kind is not very ripe owing to technology, and being difficult in a short time, substituted for silicon is a solar cell.What use was maximum on the market is monocrystalline silicon and polycrystalline silicon solar cell, and the theoretical limit of silicon solar cell conversion efficiency has only 25%, current, the high conversion efficiency of single crystal silicon solar cell has only 18%, want further to have improved more very difficulty, the conversion efficiency that how further to improve silicon solar cell has important practical significance.
Because the Energy distribution broad in the sunlight spectrum, existing any semi-conducting material all can only absorb the wherein energy photon higher than its edge energy.The less photon of energy will be absorbed by the back electrode metal through battery in the sunlight, is transformed into heat energy; High-energy photon exceeds the excess energy of energy gap width, then release the dot matrix atom that battery material itself is passed in effect by the energy calorimetric of photo-generated carrier, makes material heating itself.These energy all can not be passed to load by photo-generated carrier, become effective electric energy.Because the restriction of the energy gap of silicon materials own makes silicon solar cell can only absorb the light of certain wave band, the light of all the other wave bands can not be absorbed and slattern, so the theoretical transformation efficient of unijunction solar cell is generally lower.
Sunlight spectrum can be divided into continuous several portions, there is best matched materials to make battery with bandwidth and these parts, and outside in be superimposed together by energy gap order from big to small, allow the shortest light of wavelength by the broad gap material battery utilization of ragged edge, the long light of wavelength can transmission enters to allow the utilization of narrower gap material battery, and this just might become luminous energy into electric energy to greatest extent.
At solar spectrum, choose the semi-conducting material of different energy gaps at different wave bands and make a plurality of solar subcells, at last this a little battery strings connection is formed multijunction solar cell, thereby can improve the conversion efficiency of solar cell dramatically.Because the energy gap of part of compounds semi-conducting material is adjustable, therefore, chooses the compound semiconductor materials that appropriate experimental technique preparation can absorb different-waveband and can solve the relatively low difficult problem of current battery efficiency.
In recent years, magnetic field intensity has been subjected to people's extensive attention above the application of the superconducting intense magnetic field of 10T.High-intensity magnetic field can suspend in high-intensity magnetic field as water, plastics, timber etc. so that the nonferromagnetic material also can demonstrate intrinsic magnetic properties because of its powerful magnetization.The object that acts on macroscopic view with the general magnetic field is different, and high-intensity magnetic field can be delivered to high-intensity magnetic energy the atomic scale of material, changes the behaviors such as arrangement, coupling and migration of atom, thereby the tissue and the performance of material produced far-reaching influence.In material preparation, form, size, distribution and orientation etc. in the magnetic field energy control material growth course, thus influence the institutional framework of material, the final new material that obtains to have premium properties.The technology not appearance still for preparing multijunction solar cell by the magnetization effect in magnetic field.
Summary of the invention:
The manufacture method that the purpose of this invention is to provide a kind of silica-based high-efficiency double-junction solar battery, by this method can be on crystal silicon cell stack preparation one straton battery again, thereby solve the lower technical barrier of present conventional batteries efficient.
Technical scheme of the present invention is as follows: a kind of manufacture method of silicon base efficient multi-node solar cell, described solar battery structure is the Si/GaAs double-decker, the sub-battery of substrate is that the sub-battery of PN junction battery, top layer of Si is the PN junction battery of GaAs, the direct epitaxial growth of the sub-battery of top layer is on the silion cell substrate, and this method has following processing step:
A. the method that adopts chemical corrosion under magnetic field diffuses to form PN junction again and forms bottom cell at the fine and close matte uniformly of monocrystalline silicon sheet surface growth in high temperature dispersing furnace, clean the phosphorosilicate glass that removes silicon chip surface after the etching again;
B. preparing use MBE epitaxial growth GaAs battery on the surface of silicon wafer N-type of PN junction;
C. preparing PN junction GaAs battery surface evaporation antireflective coating;
D. use screen process press to form the back electrode of battery and carry on the back electric field in the preparation of the silicon chip P of bilayer cells profile, the back electrode of printing and back of the body electric field constitute bottom electrode and form ohmic contact behind sintering;
E. use magnetic control sputtering device to prepare the top layer electrode, in the N profile splash-proofing sputtering metal electrode formation ohmic contact of top layer GaAs battery at the top layer of battery;
F. obtain high-efficiency double-junction solar battery.
MBE (molecular beam epitaxy) is one of important method of the various semiconductive thin films of growth at present, parameters such as evaporating temperature that can be by accurate each evaporation source of control in the growth course, evaporation time, and in conjunction with various in-situ monitoring means, realization realizes the growth of submono precision to the thickness of epitaxial film, the control of composition.
Further, magnetic field adopts the method for chemical corrosion to be meant at the fine and close matte uniformly of monocrystalline silicon sheet surface growth down among the described step a: monocrystalline silicon piece is put into the matte preparation feedback device for preparing reactant liquor makes its reaction, simultaneously matte preparation feedback device is positioned in the following magnetic field of 10T, the proportioning of described reactant liquor is: NaOH or potassium hydroxide mass percent are 0.05%～15%, the mass percent of ethanol or isopropyl alcohol is 5%～30%, and the mass percent of sodium metasilicate is 0.05%～3%; The temperature of reactant liquor remains on 50 ℃～100 ℃, matte preparation time 10～45 minutes.
Further, use MBE epitaxial growth GaAs battery to be meant among the described step b: the heavily doped GaInP Window layer of N type of growing earlier; The N type of then growing heavy doping GaAs layer (N
+-GaAs), regrowth P type heavy doping GaAs layer (P
+-GaAs), form tunnel junction; The growing P-type heavily doped GaInP of elder generation is as the back of the body field of GaAs battery, the heavily doped GaAs basalis of growing P-type, the heavily doped GaAs emission layer of growth N type, the heavily doped GaInP Window layer of growth N type, the heavily doped GaAs contact layer of the N type of growing at last (N
+-GaAs) as ohmic contact, form top cell.
Further, GaAs battery surface evaporation antireflective coating is meant use PECVD growth antireflective coating SiNx or TiO on the N of GaAs battery profile among the step c
2
Technique effect of the present invention is: the method that at first adopts chemical corrosion under magnetic field is in the monocrystalline silicon sheet surface bottom cell of growing, then by MBE epitaxial growth binode battery on silion cell, by MBE the mode accurately growth of control material and the thickness of layers of material, because two-layer different material has different energy gaps, every kind of material can absorb the sunlight in the different wave spectrum scopes, the absorption spectrum of battery broadens, a large amount of sunlights are absorbed by battery, thereby have further improved the photoelectric conversion efficiency of solar cell.
Description of drawings:
Fig. 1 is the structural representation of double-junction solar battery of the present invention;
Fig. 2 is a tunnel junction schematic diagram of the present invention;
Fig. 3 position top cell schematic diagram of the present invention;
The drawing reference numeral explanation:
The 1-bottom electrode, 2-bottom cell, 3-bottom cell Window layer, 4-tunnel junction, 5-top cell, 6-antireflective coating, 7-top layer electrode.
4-1-N
+-GaAs layer, 4-2-P
+-GaAs layer, 5-1-top cell back of the body field, 5-2-top cell basic unit, 5-3-top cell emission layer, 5-4-top cell Window layer, 5-5-ohmic contact layer.
Embodiment:
Now in conjunction with the accompanying drawings embodiment is described further:
As shown in Figure 1, be the structure of double-junction solar battery, be the Si/GaAs double-decker, bottom cell 2 is that PN junction battery, the top cell 5 of Si is the PN junction battery of GaAs, and top cell 5 direct epitaxial growths are on the silion cell substrate.
The preparation method of silica-based high-efficiency double-junction solar battery:
At first use the thick p type single crystal silicon of 180 μ m to make solar cell by the method for chemical corrosion, in magnetic field, carry out the preparation of efficient matte, that is: monocrystalline silicon piece is put into the matte preparation feedback device for preparing reactant liquor and made its reaction, simultaneously matte preparation feedback device is positioned in the following magnetic field of 10T, the proportioning of described reactant liquor is: NaOH or potassium hydroxide mass percent are 0.05%～15%, the mass percent of ethanol or isopropyl alcohol is 5%～30%, and the mass percent of sodium metasilicate is 0.05%～3%; The temperature of reactant liquor remains on 50 ℃～100 ℃, matte preparation time 10～45 minutes.
In high temperature dispersing furnace, carry out the preparation of PN junction afterwards, form bottom cell 2, behind the silicon chip erosion after the diffusion, in hydrofluoric acid solution, clean the phosphorosilicate glass that removes silicon chip surface by accurate control process conditions.
The silicon chip bottom cell 2 that has spread PN junction is carried out the MBE growth: the thick N type of one deck 200nm of growing earlier doping content 1 * 10
18Cm
-3GaInP Window layer 3; The thick N type of growth one deck 10nm doping content 1 * 10
19Cm
-3N
+-GaAs layer 4-1, the P type doping content 5 * 10 that regrowth one deck 10nm is thick
19Cm
-3P
+-GaAs layer 4-2 forms tunnel junction 4; The thick P type of one deck 50nm of growing earlier doping content 5 * 10
18Cm
-3The GaInP layer as a top cell back of the body 5-1, the thick P type of one deck 3 μ m of then growing doping content 2 * 10
17Cm
-3The GaAs layer as the 5-2 of top cell basic unit, the N type doping content 1 * 10 that one deck 100nm that then grows is thick
18Cm
-3The GaAs layer as top cell emission layer 5-3, the N type heavy dopant concentration 1 * 10 that regrowth one deck 100nm is thick
18Cm
-3The GaInP layer as top cell Window layer 5-4, the N type heavy dopant concentration 1 * 10 that one deck 10nm that grows at last is thick
19Cm
-3The GaAs layer as ohmic contact layer 5-5, form top cell 5.
On GaAs top cell 4, carry out 6 growths of PECVD (plasma chemical vapor deposition) antireflective coating, thick SiNx or the TiO of growth one deck 60nm
2For monocrystalline silicon battery, generally can adopt TiO
2, SiO
2, SnO
2, ZnS, MgF
2Individual layer or double layer antireflection coating.Reflectivity is reduced to about 2% making.Antireflective coating not only can reduce the light reflection, improves current density, can also protect battery not contaminated, prevents the electrode variable color, improves the stability of battery.
Use screen printing technique on the silicon chip P of bilayer cells profile, to print the thick conductive silver paste of two 500nm as back electrode, republish the thick aluminium paste of one deck 500nm after the oven dry of drying stove as back of the body electric field, the back electrode of printing and back of the body electric field constitute bottom electrode 1, form ohmic contact behind sintering.
The binode battery is put into magnetic control sputtering device, and the thick metal level of sputter one deck 100nm on the heavily doped GaAs layer of N type forms pectination top layer electrode 7 after the photoetching, form ohmic contact after 300 ℃ of annealing in the nitrogen.
By the silica-based double-junction solar battery that said method is made, after the test of use solar simulator, the result shows that the photoelectric conversion efficiency of multijunction solar cell is excellent, and battery efficiency is greater than 28%.By MBE technology epitaxial growth binode battery on silion cell, the accurate thickness of the growth of control material and layers of material, thus further improve the efficient of solar cell.
Claims (3)
1. the manufacture method of a silica-based high-efficiency double-junction solar battery, described solar battery structure is the Si/GaAs double-decker, the substrate battery is the PN junction battery of Si, the PN junction battery that top cell is GaAs, and the direct epitaxial growth of top cell is characterized in that on the silion cell substrate:
This method has following processing step
A. the method that adopts chemical corrosion under magnetic field diffuses to form PN junction again and forms bottom cell at the fine and close matte uniformly of monocrystalline silicon sheet surface growth in high temperature dispersing furnace, clean the phosphorosilicate glass that removes silicon chip surface after the etching again;
B. preparing use MBE epitaxial growth GaAs battery on the surface of silicon wafer N-type of PN junction: the heavily doped GaInP Window layer of N type of growing earlier; The N type of then growing heavy doping GaAs layer, regrowth P type heavy doping GaAs layer forms tunnel junction; The heavily doped GaInP of elder generation's growing P-type is as the back of the body field of GaAs battery, the heavily doped GaAs basalis of growing P-type, the heavily doped GaAs emission layer of growth N type, the heavily doped GaInP Window layer of growth N type, the heavily doped GaAs contact layer of the N type of growing at last forms top cell as ohmic contact;
C. preparing PN junction GaAs battery surface evaporation antireflective coating;
D. use screen process press to form the back electrode of battery and carry on the back electric field in the preparation of the silicon chip P of bilayer cells profile, the back electrode of printing and back of the body electric field constitute bottom electrode and form ohmic contact behind sintering;
E. use magnetic control sputtering device to prepare the top layer electrode, in the N profile splash-proofing sputtering metal electrode formation ohmic contact of the GaAs of bilayer cells layer at the top layer of battery;
F. obtain high-efficiency multi-junction solar cell.
2. the manufacture method of silica-based high-efficiency double-junction solar battery according to claim 1 is characterized in that:
Magnetic field adopts the method for chemical corrosion to be meant at the fine and close matte uniformly of monocrystalline silicon sheet surface growth down among the described step a: monocrystalline silicon piece is put into the matte preparation feedback device for preparing reactant liquor makes its reaction, simultaneously matte preparation feedback device is positioned in the following magnetic field of 10T, the proportioning of described reactant liquor is: NaOH or potassium hydroxide mass percent are 0.05%～15%, the mass percent of ethanol or isopropyl alcohol is 5%～30%, and the mass percent of sodium metasilicate is 0.05%～3%; The temperature of reactant liquor remains on 50 ℃～100 ℃, matte preparation time 10～45 minutes.
3. the manufacture method of silica-based high-efficiency double-junction solar battery according to claim 1 is characterized in that:
GaAs battery surface evaporation antireflective coating is meant and uses PECVD growth antireflective coating SiNx or TiO on the N of GaAs battery profile among the described step c
2
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