CN103928571B - A kind of metal oxide semiconductor nano whisker/crystal-silicon battery slice and preparation method thereof - Google Patents
A kind of metal oxide semiconductor nano whisker/crystal-silicon battery slice and preparation method thereof Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 42
- 239000010703 silicon Substances 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title claims abstract description 36
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 21
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000013078 crystal Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 8
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 36
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 2
- 229910002651 NO3 Inorganic materials 0.000 claims description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- FAPDDOBMIUGHIN-UHFFFAOYSA-K antimony trichloride Chemical compound Cl[Sb](Cl)Cl FAPDDOBMIUGHIN-UHFFFAOYSA-K 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 230000005611 electricity Effects 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
- 238000001579 optical reflectometry Methods 0.000 abstract description 2
- 239000002994 raw material Substances 0.000 abstract description 2
- 238000012876 topography Methods 0.000 abstract description 2
- 230000003197 catalytic effect Effects 0.000 abstract 1
- 230000033116 oxidation-reduction process Effects 0.000 abstract 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 16
- 210000004027 cell Anatomy 0.000 description 15
- 239000000243 solution Substances 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 9
- 239000007788 liquid Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 4
- 238000013082 photovoltaic technology Methods 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229960000583 acetic acid Drugs 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 210000003771 C cell Anatomy 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of metal oxide semiconductor nano whisker/crystal-silicon battery slice and preparation method thereof.The method has the advantage that 1. manufacturing process simple and fasts, and the crystal-silicon battery slice surface topography of gained is stablized controlled.2. light reflectivity can be greatly reduced, improve the electricity conversion of crystal silicon solar batteries.3. raw material is easy to get, and manufacturing process is pollution-free, and efficiency is high, is suitable for industrialization large-scale production.Present invention process mainly utilizes metal ion to occur catalytic oxidation-reduction to react with coarse crystal-silicon battery slice surface in strong corrosive media, form the nano whisker of uniform, controllable, thus improve the absorption efficiency of crystal silicon battery, open-circuit voltage, short circuit current and fill factor, curve factor, and then its electricity conversion is greatly improved.
Description
Technical field
The present invention relates to solar cell and photoelectric nano Material Field, specifically a kind of semiconductor alloy
Oxidate nano whisker/crystal-silicon battery slice and preparation method thereof.
Background technology
Photovoltaic technology is generation of electricity by new energy technology most with prospects.In past 10 years, whole world photovoltaic is sent out
Electricity average annual growth rate reaches 50%.Also can grow by development decades from now on, and eventually become people
The main body of the class energy.It may be said that who really grasps photovoltaic technology, who will grasp the active of future source of energy
Power.China is the first big producing country of world's photovoltaic, and 2012 annual productions reach 21GW, and yield accounts for
The 63% of whole world photovoltaic industry；Installed capacity, more than 3.5GW, is only second to Germany, and is expected to this year surpass
Cross Germany and become the first in the world.In terms of China's future society Strategy for economic development path, development photovoltaic produces
Ye Shi China ensure energy supply, build low-carbon (LC) society, promote economic restructuring, cultivate strategic
The important directions of new industry.It is " some about promoting that photovoltaic industry develops in a healthy way that State Council issues
Suggestion " point out, to China photovoltaic generation total installation of generating capacity more than 35GW to be reached in 2015.China
The Long-and Medium-term Development planning of 2010-2050, photovoltaic generation to reach 1,000,000,000 kilowatts, the most now
Ten times of domestic installed capacity.And thermal power generation will account for whole supply of electric power ratio from now
72.5%, drop to about 30%.Photovoltaic technology is roughly divided into crystal silicon battery technology (monocrystalline silicon, polycrystalline
Silicon) and hull cell (amorphous silicon film battery, cadmium telluride (CdTe) hull cell, CIGS
(CIGS) thin film battery technology) two big classes.Crystal silicon battery conversion efficiency is the highest, and technology becomes the most
Ripe；The 95% of volume production solar cell is above crystal silicon battery at present, and hull cell only accounts for about 5%.
Therefore, for current actual conditions, it is (monocrystalline silicon, many that photovoltaic technology is mainly crystal silicon battery technology
Crystal silicon), crystal silicon solar batteries occupies leading ground in photovoltaic industry large-scale application and industrial production
Position, the photoelectric transformation efficiency improving existing crystal silicon solar batteries is that reduction unit cost of electricity-generating is most effective
Approach.
The dielectric constant of crystalline silicon is of a relatively high, and efficiency of light absorption is the highest.Crystalline silicon is again indirect gap
Semi-conducting material, can band 1.12eV, there is the biggest direct gap (3.4eV) and indirect gap (1.12
EV) poor, significant response spectrum is about 600-1100nm, produces after absorbing higher than the solar photon of energy gap
Heat-generating electronic and hole, by Phonon emission subsequently, these hot carriers are caught at their energy
Cooling rapidly before obtaining, causes substantial amounts of solar energy to be lost with the form of " thermoelectron ", limits
Device efficiency, so, the highest theoretical conversion efficiencies of single battery is about 31%.On the other hand, brilliant
The performance of silion cell also can raise with the temperature that " thermoelectron " causes and decline.
In order to improve the photoelectric transformation efficiency of photovoltaic device, reduce light reflection loss, battery manufacturers pair
Cell panel uses launch site passivation, subregion doping, surface-texturing, surface to etch, at crystal silicon material
The technology such as surface evaporation SiN antireflective passivating coating process, and improve crystal silicon to a certain extent too
Sun can battery optical energy utilization efficiency and photoelectric transformation efficiency.But, although evaporation SiN antireflective passivation
Coating cell piece is the lowest at 500-1050nm scope reflectivity, the highest at below 500nm.More important
Be this pattern loss and the Utilizing question that do not solve " thermoelectron ".Cause crystal silicon solar
Battery optical energy utilization efficiency and photoelectric transformation efficiency do not significantly improve.The effect of the highest conversion in laboratory at present
Rate is 24.7%, and large-scale production efficiency is about 15%.
Semiconductor nano or quantum dot (QDs) have extinction coefficient height, intrinsic dipole moment is big, modulate energy
The characteristic of gap, the easily multiple exciton of generation, is substantially better than Organometallic dye as light absorber.Grind
Studying carefully discovery: quantum dot passes through chemical method, direct growth enters nano TiO 2 porous layer, is formed and contaminates
The QDs/TiO2 structure that material sensitized cells (DSSC) is similar；Due to quantum confined effect, electronic energy
Energy spacing between Ji is more much bigger than the highest Phonon frequency of lattice, and hot carrier relaxation can only pass through
The multi-phonon that slows down is launched and is produced a phonon " bottleneck ".So, semiconductor nano has and slows down
Hot carrier cooldown rate and the effect of electronics relaxation, can make hot carrier before being cooled to band edge,
They captures are utilized, is allowed to improve solar battery efficiency.Turn by its solar cell theory made
Change efficiency and can be up to 66%, the life-span reach more than 20 years it is considered to be the most promising third generation too
Sun can battery.Ou Guangfu giant Isofoton is by using laser selective transmitter manufacturing process, the sun
Battery efficiency can reach 19.5%, nearly half percentage point of traditional manufacturing technology peak efficiency before exceeding；?
Shandong university Yeonwoong Jung et al. deposits one layer of single armed CNT on n-Si sheet, is imitated by battery
Rate is brought up to about 12% by original 11%.
Summary of the invention
The present invention uses a kind of simple and quick chemical deposition process method at crystal silicon (monocrystalline silicon, polycrystalline
Silicon) to be about the metal oxide semiconductor of 20-100nm nanocrystalline for superficial growth a layer thickness of cell piece
Must, this nano whisker and the p-n junction interface formation Physicochemical stable performance of crystal-silicon battery slice, safety
Heterojunction structure, the absorption efficiency of cell piece, the concentration of photo-generated carrier and crystal silicon are greatly improved too
The electricity conversion of sun energy battery.The cell piece of growth metal oxide semiconductor nano whisker is whole
The reflectivity in individual solar spectrum district (ultraviolet-visible-near-infrared) is less than the cell piece being coated with antireflective film.This
Kind of technology does not change the manufacture craft of existing crystal silicon solar batteries, and low cost is pollution-free, is suitable for big
Technical scale produces, the most rising.
A kind of metal oxide semiconductor nano whisker/crystal-silicon battery slice and preparation method thereof, including following
Step:
1) preparation of source metal solution: preparing metal ion concentration is 0.0001～1mol/L, hydrofluoric acid
Concentration is the source metal solution of 0.05～5mol/L；
2) whisker controls growth: prepare the hydrofluoric acid/hydrogen peroxide solution of 0.05～5mol/L；
3) pretreatment of crystal-silicon battery slice: the crystal-silicon battery slice carrying out p-n junction is immersed source metal solution
In 1～300s, take out, drain；Immerse in the hydrofluoric acid/hydrogen peroxide of 0.05～5mol/L 1～300s again,
Take out, clean 1～5min by deionized water；Dry up；
4) it is heat-treated: use 120 DEG C～240 DEG C of baking oven to process 1～10min.
Source metal in step (1) is in the chloride of copper, silver, platinum or antimony, acetate or nitrate
One.
Described whisker controls growth course and carries out in the mixed solution of hydrofluoric acid and hydrogen peroxide.
Described crystal-silicon battery slice is monocrystalline silicon, polysilicon and the one in non-crystalline silicon.
Metal oxide semiconductor nano whisker/crystal-silicon battery slice the surface of preparation is uniform, semiconductor alloy
Oxidate nano whisker thickness is 10～100nm, morphology controllable.
Metal oxide semiconductor nano whisker/crystal-silicon battery slice that the present invention proposes and preparation method thereof,
Have the following advantages and feature:
A) the nanocrystal silicon solar cell material surface topography prepared by the present invention is uniform, and stable
Property is good；
B) present invention process method of operating simple and fast, raw material is easy to get；Experimental operating conditions is easily controlled,
There is good industrial-scale application prospect；
C) present invention prepare nanocrystalline have well fall into luminous effect, it is possible to significantly improve the suction of photon
Produce effects rate, reduce light reflectivity；
D) the metal oxide semiconductor nano whisker/crystal-silicon battery slice prepared can be greatly improved battery
Open-circuit voltage, short circuit current, fill factor, curve factor and electricity conversion.
Accompanying drawing explanation
Fig. 1 is embodiment 1 metal oxide semiconductor nano whisker/crystal-silicon battery slice FESEM plane
Image.
Fig. 2 is embodiment 1 metal oxide semiconductor nano whisker/crystal-silicon battery slice FESEM section
Image.
Fig. 3 is the absorbability spectrum of embodiment 1 metal oxide semiconductor nano whisker/crystal-silicon battery slice
Figure.
Fig. 4 is the reflectance spectrum of embodiment 1 metal oxide semiconductor nano whisker/crystal-silicon battery slice
Figure.
Fig. 5 is the photoelectric properties figure of embodiment 1 metal oxide semiconductor nano whisker/crystal-silicon battery slice.
Detailed description of the invention
Below by embodiment, the invention will be further described, and its purpose is only that and is best understood from this
Bright content rather than limit the scope of the invention.
Embodiment 1
The preparation method of metal oxide semiconductor nano whisker/crystal-silicon battery slice that the present embodiment provides,
Specifically comprise the following steps that
The source metal solution of (a) preparation 0.001mol/L；Weigh copper acetate, add a certain amount of distillation
Water and the hydrofluoric acid of 40%；Making copper acetate concentration is 0.001mol/L, and hydrofluoric acid concentration is 5.0mol/L.
(b) preparation corrosive liquid；Weigh a certain amount of hydrofluoric acid and hydrogen peroxide and add distilled water and add；Preparation
Obtaining hydrofluoric acid concentration is 5.0mol/L, and hydrogen peroxide concentration is 0.7mol/L.
C cell piece is immersed 15s in source metal solution by (), take out, drain；Immerse again in corrosive liquid
15s, takes out, cleans 1min by deionized water；Surface is dried up with hair-dryer.
D () uses vacuum drying chamber 180 DEG C to be heat-treated 5min.
Embodiment 2
The preparation method of the present embodiment is same as in Example 1, and difference is step (a), metal
Source solution is silver ion solution, and concentration is 0.001mol/L.
Embodiment 3
The preparation method of the present embodiment is same as in Example 1, and difference is step (a), metal
Source solution is the solution of platinum, and concentration is 0.001mol/L.
Embodiment 4
The preparation method of the present embodiment is same as in Example 1, and difference is step (a), metal
Source solution is the solution of antimony, and concentration is 0.001mol/L.
Embodiment 5
The preparation method of the present embodiment is same as in Example 1, and difference is that step (a) weighs vinegar
Acid copper, preparation copper acetate concentration is 0.005mol/L.
Embodiment 6
The preparation method of the present embodiment is same as in Example 1, and difference is that step (a) weighs vinegar
Acid copper, preparation copper acetate concentration is 0.01mol/L.
Embodiment 7
The preparation method of the present embodiment is same as in Example 1, and difference is that step (a) adds 40%
Hydrofluoric acid so that hydrofluoric acid concentration is 2mol/L.
Embodiment 8
The preparation method of the present embodiment is same as in Example 1, and difference is that step (a) adds 40%
Hydrofluoric acid so that hydrofluoric acid concentration is 3.5mol/L.
Embodiment 9
The preparation method of the present embodiment is same as in Example 1, and difference is that step (b) adds hydrogen
Fluoric acid and hydrogen peroxide so that the concentration of hydrofluoric acid is 2mol/L, the concentration of hydrogen peroxide is 0.2mol/L.
Embodiment 10
The preparation method of the present embodiment is same as in Example 1, and difference is that step (b) adds hydrogen
Fluoric acid and hydrogen peroxide so that the concentration of hydrofluoric acid is 3.5mol/L, the concentration of hydrogen peroxide is 0.5mol/L.
Embodiment 11
The preparation method of the present embodiment is same as in Example 1, and difference is that step (c) is by battery
Sheet immerses 10s in source metal solution, takes out, drains；Immerse 10s in corrosive liquid again.
Embodiment 12
The preparation method of the present embodiment is same as in Example 1, and difference is that step (c) is by battery
Sheet immerses 20s in source metal solution, takes out, drains；Immerse 20s in corrosive liquid again.
Embodiment 13
The preparation method of the present embodiment is same as in Example 1, and difference is that step (c) is by battery
Sheet immerses 20s in source metal solution, takes out, drains；Immerse 30s in corrosive liquid again.
Embodiment 14
The preparation method of the present embodiment is same as in Example 1, and difference is that step (c) is by battery
Sheet immerses 30s in source metal solution, takes out, drains；Immerse 30s in corrosive liquid again.
Embodiment 15
The preparation method of the present embodiment is same as in Example 1, and it is true that difference is that step (d) uses
Empty 120 DEG C of drying box is heat-treated 10min.
Embodiment 16
The preparation method of the present embodiment is same as in Example 1, and it is true that difference is that step (d) uses
Empty 150 DEG C of drying box is heat-treated 8min.
Embodiment 17
The preparation method of the present embodiment is same as in Example 1, and it is true that difference is that step (d) uses
Empty 200 DEG C of drying box is heat-treated 3min.
The above is presently preferred embodiments of the present invention, but the present invention should not be limited to this enforcement
Example disclosure of that.So it is every without departing from the equivalence completed under principles of this disclosure or repair
Change, both fall within the scope of protection of the invention.
Claims (4)
1. a preparation method for metal oxide semiconductor nano whisker/crystal-silicon battery slice, its feature exists
In, comprise the following steps:
1) preparation of source metal solution: preparing metal ion concentration is 0.0001～1mol/L, hydrofluoric acid
Concentration is the source metal solution of 0.05～5mol/L；
2) hydrofluoric acid/hydrogen peroxide solution of preparation 0.05～5mol/L；
3) crystal-silicon battery slice carrying out p-n junction is immersed in source metal solution 1～300s, takes out, drain；
Immerse in the hydrofluoric acid/hydrogen peroxide of 0.05～5mol/L 1～300s again, take out, clean by deionized water
1～5min；Dry up；
4) it is heat-treated: use 120 DEG C～240 DEG C of baking oven to process 1～10min.
The system of metal oxide semiconductor nano whisker/crystal-silicon battery slice the most according to claim 1
Preparation Method, it is characterised in that: the source metal in step (1) is a kind of in copper, silver, platinum and antimony
Chloride, acetate or nitrate.
The system of metal oxide semiconductor nano whisker/crystal-silicon battery slice the most according to claim 1
Preparation Method, it is characterised in that: described crystal-silicon battery slice is in monocrystalline silicon, polysilicon and non-crystalline silicon
A kind of.
4. the metal oxide semiconductor prepared according to the method described in claim 1-3 any one is received
Meter Jing Xu/crystal-silicon battery slice, it is characterised in that: the metal oxide semiconductor nano whisker/crystal silicon of preparation
Cell piece surface is uniform, and metal oxide semiconductor nano whisker thickness is 10～100nm, morphology controllable.
Priority Applications (1)
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