CN104112651B - A kind of rectifier chip fabrication technique - Google Patents
A kind of rectifier chip fabrication technique Download PDFInfo
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- CN104112651B CN104112651B CN201410315792.1A CN201410315792A CN104112651B CN 104112651 B CN104112651 B CN 104112651B CN 201410315792 A CN201410315792 A CN 201410315792A CN 104112651 B CN104112651 B CN 104112651B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 title claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 69
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 68
- 239000010703 silicon Substances 0.000 claims abstract description 68
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 44
- 239000011574 phosphorus Substances 0.000 claims abstract description 44
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052796 boron Inorganic materials 0.000 claims abstract description 37
- 238000009792 diffusion process Methods 0.000 claims abstract description 32
- 230000008021 deposition Effects 0.000 claims abstract description 19
- 238000005488 sandblasting Methods 0.000 claims abstract description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 8
- 238000006396 nitration reaction Methods 0.000 claims abstract description 8
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 claims abstract description 4
- 239000000126 substance Substances 0.000 claims abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 238000000354 decomposition reaction Methods 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 238000004140 cleaning Methods 0.000 description 14
- 239000007788 liquid Substances 0.000 description 11
- 238000010422 painting Methods 0.000 description 9
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000002253 acid Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000004576 sand Substances 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 229940062057 nitrogen 80 % Drugs 0.000 description 2
- 229940063746 oxygen 20 % Drugs 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 230000009514 concussion Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention relates to a kind of rectifier chip fabrication techniques, include the following steps：(1) silicon chip is put into nitration mixture and is thinned；(2) silicon chip in (1) is cleaned successively, attached phosphorus, phosphorus source pre-deposition, phosphorus fragment and sandblasting；(3) silicon chip after sandblasting cleaned successively, apply boron, phosphorus source and promotes again and oxide layer；(4) silicon chip after oxide layer cleaned successively, apply boron, boron diffusion and boron fragment；(5) mode of glassivation is finally combined, by chemical nickel plating, complete chip, and the product stability that the present invention makes is good, and reliability is high.
Description
Technical field
The present invention relates to high-power semiconductor rectifying device technical field more particularly to a kind of rectifier chip manufacturing works
Skill.
Background technology
From the point of view of the ESD tests of current conventional plain edition bridge rectifier, under normal air pattern, can usually it bear
About 2KV is tested, and voltage can be born in order to promote test, through analysis, the predominantly chip of rectifier, using conventional making
Mode, performance can not bear higher ESD test voltages, therefore be unable to reach client's test request after assembling.
Invention content
Technical problem to be solved by the invention is to provide a kind of rectifier chip fabrication techniques, solve in the prior art
It is insufficient so that product can bear higher test voltage.
The technical solution that the present invention solves above-mentioned technical problem is as follows：
A kind of rectifier chip fabrication technique, includes the following steps：
(1) silicon chip is packed into the gaily decorated basket, is put into nitration mixture and is thinned；The gaily decorated basket is waved in corrosion process, and it is uniform to promote corrosion
Property, it is ensured that the consistency of Reducing thickness, etching time 10-15s are quickly put into three-level flowing pure water after corroding and rinse, until
Residual acid on silicon chip is rinsed well, and water resistance value is up to 10 Ω cm or more；
(2) silicon chip in (1) is cleaned successively, attached phosphorus, phosphorus source pre-deposition, phosphorus fragment and sandblasting；
When Wafer Cleaning, ultrasonic vibration is carried out using rub liquid and hot pure water of Kazakhstan respectively, liquid proportioning is rubbed to breathe out the powder that rubs in Kazakhstan：H2O
=90g：14400ml, Warm degree:80 ± 5 DEG C, time 10-20min, then silicon chip is put into HF solution and impregnates 4-6min, HF is molten
Liquid proportioning is HF：H2O：H2O2=2000：10000：200, Warm degree:It 25 ± 10 DEG C, finally washed by water, circulating water concussion, rushed
Water, drying, Wafer Cleaning finish；
The attached phosphorus of silicon chip chooses the paper-like phosphorus source not less than 70% concentration, is clipped among 2 silicon chips, comes quartz boat successively
On, enter diffusion furnace after drained and carries out phosphorus source pre-deposition；
Phosphorus fragment two-by-two relatively, is not easy to separate, need to put it into not less than 15 DEG C because of the complete silicon chip of phosphorus source pre-deposition
Impregnated in HF, time 16-24H, after silicon chip naturally separate after, washed by water, ultrasonic vibration, bath, it is ensured that silicon chip surface is without residual
Acid；
Sandblasting, the one side for not carrying out phosphorus source pre-deposition to silicon chip carry out sandblasting, select the white fused alumina sand of model W40, make
Silicon chip is ground with sand-blasting machine, removal amount is in 15-25um.
(3) silicon chip after sandblasting is cleaned successively, phosphorus source promotes again and oxide layer；
Cleaning in same step (2) is cleaned, the silicon chip after cleaning is opposite two-by-two by the one side for having carried out phosphorus source pre-deposition,
Neat is put into quartz boat, carries out phosphorus source and promotes again；
Oxide layer carries out sandblasting to silicon chip another side, removes surface oxide layer, removal amount 2-5um.
(4) silicon chip after oxide layer cleaned successively, apply boron, boron diffusion, boron fragment and sandblasting；
It cleans cleaning, the silicon chip after cleaning in same step (2) and painting boron is carried out to not attached phosphorus face, first carry out matching liquid：Boron water
Prepare boron oxide：Ethylene glycol monomethyl ether=100g：400ml stirs 6 ± 2h, filters solution with filter paper after precipitating 6 ± 2h, applies boron
The preparation boron water of liquid：Aluminum nitrate solution：Alumina powder=50ml：6ml：0.5g stirs 10min or more,
The not attached phosphorus one side of silicon chip is lain in upward and is applied on boron sol evenning machine turntable, suction piece key is first pressed and silicon chip is adsorbed on rotation
On turntable, then make silicon chip start to rotate by start key, is dipped using writing brush and apply boron liquid (nib 4/5 need to immerse painting boron with upper volume
In liquid) painting boron is carried out to silicon chip；Writing brush applies boron to edge, pen is lifted after filling silicon chip, machine can be automatically stopped from silicon chip, center
Rotation is removed silicon chip and is placed on the filter paper of heating plate and dries 9 ± 1min, by sequencing when putting remove silicon chip be placed in it is stainless
On the filter paper of steel disk, silicon chip is applied into boron face and is stacked relatively two-by-two with painting boron face, and a little aluminium powder is gently spread in attached phosphorus face, it is last neat
Be put on quartz boat be ready for boron diffusion；
Boron fragment, the silicon chip after boron is spread, which is put into the HF not less than 15 DEG C, to be impregnated, time 10-18H, waits for silicon chip nature
Separate after, washed by water, ultrasonic vibration, bath, it is ensured that silicon chip surface is without residual acid；
Sandblasting carries out sandblasting to silicon chip two sides, selects the white fused alumina sand of model W40, is carried out to silicon chip using sand-blasting machine
Grinding, attached phosphorus face 1-3um apply boron face 5-6um.
Based on the above technical solution, the present invention can also be improved as follows：
Further, the nitration mixture in the step (1) is HF：HNO3:C2H4O2：H2SO4=9：9：12：4 mixed solution；
Further, the phosphorus source pre-deposition in the step (2) is that a concentration of 70% phosphorus source concentration of being not less than is attached to silicon chip
After upper, phosphorus source decomposition is first carried out in the diffusion furnace for being 550 DEG C into temperature, time 1-2h, it is 1200 DEG C then to enter back into temperature
Diffusion furnace in carry out pre-deposition, time 2-4h, it is nitrogen 92.3%- to be passed through the ratio of gas in the diffusion furnace
83.3%, oxygen 7.7%-16.7%；
Further, the phosphorus source of the step (3) promotes again spreads for silicon chip to be put into the diffusion furnace that temperature is 1250 DEG C,
Time is 10-15h, and the ratio that gas is passed through in the diffusion furnace is nitrogen 90.9%-80%, oxygen 9.1%-20%；
Further, the boron is diffused as the silicon chip after painting boron being put into the diffusion furnace that temperature is 1250 DEG C and spread, the time
For 15-20h, the ratio for being passed through gas is nitrogen 90.9%-80%, oxygen 9.1%-20%.
The made chip out of this art inventions, after being assembled into bridge rectifier, in terms of ESD electrostatic tests, more often
Rule chip can bear higher voltage, and stability is also preferable, also higher in client use reliability.
The beneficial effects of the invention are as follows：
1. by the technology mode of triple diffusion, deepens silicon chip doping concentration, promote its functional characteristic；
2. having the higher resistance to survey of ESD electrostatic, reliability is higher；
3. also more conventional product wants low to finished product its power consumption after assembling.
Specific implementation mode
The principles and features of the present invention are described below, and the given examples are served only to explain the present invention, is not intended to limit
Determine the scope of the present invention.
Embodiment 1：
A kind of rectifier chip fabrication technique, includes the following steps：
(1) silicon chip is put into nitration mixture and is thinned, etching time 10s is quickly put into three-level flowing pure water after corroding
Middle flushing, until the residual acid on silicon chip is rinsed well, water resistance value is up to 10 Ω cm or more；
(2) silicon chip is carried out ultrasonic vibration and is cleaned using rub liquid and hot pure water of Kazakhstan respectively, after cleaning, chosen
The paper-like phosphorus source of 70% concentration, is clipped among two panels silicon chip, comes on quartz boat successively, and entering diffusion furnace after drained carries out phosphorus
Then source pre-deposition carries out phosphorus fragment and sandblasting；
(3) silicon chip is cleaned according to cleaning way in step (2), for the silicon chip after cleaning, by having carried out, phosphorus source is pre-
The one side of deposition is opposite two-by-two, and neat is put into quartz boat, carries out phosphorus source and promotes again, is then sprayed to silicon chip another side
Sand removes surface oxide layer, removal amount 5um；
(4) first silicon chip is cleaned according to the cleaning way in step (2), configuration applies boron liquid, by applying boron sol evenning machine to silicon
Piece carries out painting boron, then carries out boron diffusion and boron fragment；
(5) mode of glassivation is finally combined, by chemical nickel plating, complete chip.
Wherein the nitration mixture is HF：HNO3:C2H4O2：H2SO4=9：9：12：4 mixed solution；
Phosphorus source pre-deposition in the step (2) be by silicon chip after attached phosphorus be put into temperature be in 550 DEG C of diffusion furnace it is advanced
Row phosphorus source is decomposed, time 1h, is then entered back into the diffusion furnace that temperature is 1200 DEG C and is carried out pre-deposition, time 2h, the expansion
The ratio that gas is passed through in scattered stove is 92.3%, oxygen 7.7%；
The phosphorus source of the step (3) promotes again to spread for silicon chip to be put into the diffusion furnace that temperature is 1250 DEG C, and the time is
15h, the ratio that gas is passed through in the diffusion furnace are nitrogen 90.9%, oxygen 9.1%；
The boron, which is diffused as the silicon chip after painting boron being put into the diffusion furnace that temperature is 1250 DEG C, to spread, and time 15h leads to
The ratio for entering gas is nitrogen 90.9%, oxygen 9.1%；
The made chip out of this art inventions, after being assembled into bridge rectifier, in terms of ESD electrostatic tests, more often
Rule chip can bear higher voltage, and stability is also preferable, also higher in client use reliability.
Embodiment 2：
A kind of rectifier chip fabrication technique, includes the following steps：
(1) silicon chip is put into nitration mixture and is thinned, etching time 15s is quickly put into three-level flowing pure water after corroding
Middle flushing, until the residual acid on silicon chip is rinsed well, water resistance value is up to 10 Ω cm or more；
(2) silicon chip is carried out ultrasonic vibration and is cleaned using rub liquid and hot pure water of Kazakhstan respectively, after cleaning, chosen
The paper-like phosphorus source of 80% concentration, is clipped among two panels silicon chip, comes on quartz boat successively, and entering diffusion furnace after drained carries out phosphorus
Then source pre-deposition carries out phosphorus fragment and sandblasting；
(3) silicon chip is cleaned according to cleaning way in step (2), for the silicon chip after cleaning, by having carried out, phosphorus source is pre-
The one side of deposition is opposite two-by-two, and neat is put into quartz boat, carries out phosphorus source and promotes again, is then sprayed to silicon chip another side
Sand removes surface oxide layer, removal amount 5um；
(4) first silicon chip is cleaned according to the cleaning way in step (2), configuration applies boron liquid, by applying boron sol evenning machine to silicon
Piece carries out painting boron, then carries out boron diffusion and boron fragment；
(5) mode of glassivation is finally combined, by chemical nickel plating, complete chip.
Wherein the nitration mixture is HF：HNO3:C2H4O2：H2SO4=9：9：12：4 mixed solution；
Phosphorus source pre-deposition in the step (2) be by silicon chip after attached phosphorus be put into temperature be in 550 DEG C of diffusion furnace it is advanced
Row phosphorus source is decomposed, time 2h, is then entered back into the diffusion furnace that temperature is 1200 DEG C and is carried out pre-deposition, time 4h, the expansion
The ratio that gas is passed through in scattered stove is nitrogen 83.3%, oxygen 16.7%；
The phosphorus source of the step (3) promotes again to spread for silicon chip to be put into the diffusion furnace that temperature is 1250 DEG C, and the time is
15h, the ratio that gas is passed through in the diffusion furnace are nitrogen 80%, oxygen 20%；
The boron, which is diffused as the silicon chip after painting boron being put into the diffusion furnace that temperature is 1250 DEG C, to spread, and time 20h leads to
The ratio for entering gas is nitrogen 80%, oxygen 20%；
The made chip out of this art inventions, after being assembled into bridge rectifier, in terms of ESD electrostatic tests, more often
Rule chip can bear higher voltage, and stability is also preferable, also higher in client use reliability.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (3)
1. a kind of rectifier chip fabrication technique, which is characterized in that include the following steps：
(1) silicon chip is put into nitration mixture and is thinned, remove damaging layer；
(2) silicon chip is cleaned successively, attached phosphorus, phosphorus source pre-deposition, phosphorus fragment and sandblasting；
(3) silicon chip after sandblasting is cleaned successively, phosphorus source promotes again and oxide layer；
(4) silicon chip after oxide layer cleaned successively, apply boron, boron is spread and boron fragment, the boron are diffused as that boron will be applied
Silicon chip afterwards, which is put into the diffusion furnace that temperature is 1250 DEG C, to spread, time 15-20h, and gas is passed through in proportion in the diffusion furnace
Body：Nitrogen 90.9%-80%, oxygen 9.1%-20%；
(5) mode of glassivation is finally combined, by chemical nickel plating, complete chip.
2. a kind of rectifier chip fabrication technique according to claim 1, which is characterized in that the phosphorus in the step (2)
Source pre-deposition is that phosphorus source decomposition is first carried out in the diffusion furnace for being 550 DEG C into temperature after phosphorus source is attached on silicon chip, time 1-2h,
Then it is that pre-deposition is carried out in 1200 DEG C of diffusion furnace to enter back into temperature, time 2-4h, is passed through in proportion in the diffusion furnace
Gas：Nitrogen 92.3%-83.3%, oxygen 7.7%-16.7%.
3. a kind of rectifier chip fabrication technique according to claim 1, which is characterized in that the phosphorus source of the step (3)
It promotes and is spread for silicon chip to be put into the diffusion furnace that temperature is 1250 DEG C again, time 10-15h, in the diffusion furnace in proportion
It is passed through gas：Nitrogen 90.9%-80%, oxygen 9.1%-20%.
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| CN105977155B (en) * | 2016-07-01 | 2020-03-20 | 扬州虹扬科技发展有限公司 | Manufacturing process of fast recovery chip |
| CN107068561B (en) * | 2017-03-27 | 2019-08-06 | 扬州虹扬科技发展有限公司 | A kind of preparation method of ultralow forward voltage rectifier chip |
| CN109712876A (en) * | 2018-12-30 | 2019-05-03 | 重庆市妙格半导体研究院有限公司 | A kind of PN junction method of diffusion |
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| CN102386092A (en) * | 2010-09-02 | 2012-03-21 | 南通康比电子有限公司 | Manufacturing method of low-leakage diode chip |
| CN102496619A (en) * | 2011-12-26 | 2012-06-13 | 天津环联电子科技有限公司 | Protector chip of light emitting diode and production technology thereof |
| CN102983072A (en) * | 2012-10-25 | 2013-03-20 | 南通康比电子有限公司 | Diffusion method for low fragment rate diode |
| CN103000500A (en) * | 2012-10-25 | 2013-03-27 | 南通康比电子有限公司 | Deep diffusion process for manufacturing diodes |
| CN103606522A (en) * | 2013-10-23 | 2014-02-26 | 蚌埠天宇机械工具有限公司 | GPP diode chip production process |
-
2014
- 2014-07-03 CN CN201410315792.1A patent/CN104112651B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102386092A (en) * | 2010-09-02 | 2012-03-21 | 南通康比电子有限公司 | Manufacturing method of low-leakage diode chip |
| CN102496619A (en) * | 2011-12-26 | 2012-06-13 | 天津环联电子科技有限公司 | Protector chip of light emitting diode and production technology thereof |
| CN102983072A (en) * | 2012-10-25 | 2013-03-20 | 南通康比电子有限公司 | Diffusion method for low fragment rate diode |
| CN103000500A (en) * | 2012-10-25 | 2013-03-27 | 南通康比电子有限公司 | Deep diffusion process for manufacturing diodes |
| CN103606522A (en) * | 2013-10-23 | 2014-02-26 | 蚌埠天宇机械工具有限公司 | GPP diode chip production process |
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