CN114005733B - Method for manufacturing vehicle-gauge-level rectification chip - Google Patents
Method for manufacturing vehicle-gauge-level rectification chip Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 131
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 131
- 239000010703 silicon Substances 0.000 claims abstract description 131
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 37
- 238000005530 etching Methods 0.000 claims abstract description 30
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000002253 acid Substances 0.000 claims abstract description 22
- 239000003960 organic solvent Substances 0.000 claims abstract description 15
- 230000008569 process Effects 0.000 claims abstract description 9
- 229920000742 Cotton Polymers 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 239000004744 fabric Substances 0.000 claims abstract description 5
- 239000003292 glue Substances 0.000 claims abstract description 4
- 239000002957 persistent organic pollutant Substances 0.000 claims abstract description 4
- 238000005201 scrubbing Methods 0.000 claims abstract description 4
- 239000011521 glass Substances 0.000 claims description 41
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 38
- 239000000243 solution Substances 0.000 claims description 23
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 22
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 21
- 238000007747 plating Methods 0.000 claims description 21
- 238000001962 electrophoresis Methods 0.000 claims description 20
- 238000002161 passivation Methods 0.000 claims description 20
- 229910052759 nickel Inorganic materials 0.000 claims description 19
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 14
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 10
- 229910017604 nitric acid Inorganic materials 0.000 claims description 10
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 8
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 8
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 238000009210 therapy by ultrasound Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 229910021645 metal ion Inorganic materials 0.000 claims description 6
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 6
- 239000003513 alkali Substances 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 5
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 claims description 4
- 229910000085 borane Inorganic materials 0.000 claims description 4
- 229940078494 nickel acetate Drugs 0.000 claims description 4
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 claims description 4
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 4
- 239000012279 sodium borohydride Substances 0.000 claims description 4
- 229910000033 sodium borohydride Inorganic materials 0.000 claims description 4
- SYBYTAAJFKOIEJ-UHFFFAOYSA-N 3-Methylbutan-2-one Chemical compound CC(C)C(C)=O SYBYTAAJFKOIEJ-UHFFFAOYSA-N 0.000 claims description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 3
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 claims description 3
- 239000012670 alkaline solution Substances 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 230000007935 neutral effect Effects 0.000 claims description 3
- 230000010355 oscillation Effects 0.000 claims description 3
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- -1 tungsten halogen Chemical class 0.000 claims description 3
- 239000003929 acidic solution Substances 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 107
- 239000012141 concentrate Substances 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 4
- 238000007598 dipping method Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000009792 diffusion process Methods 0.000 description 6
- 238000002604 ultrasonography Methods 0.000 description 5
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000012752 auxiliary agent Substances 0.000 description 2
- 230000001376 precipitating effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 206010063385 Intellectualisation Diseases 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical class O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention relates to the technical field of semiconductor wafers, in particular to a method for manufacturing a vehicle-scale rectifier chip, which comprises the following steps: providing a silicon wafer in advance, coating photoresist on two sides of the silicon wafer and exposing according to a mask pattern to form a hollow pattern on the surface of the silicon wafer; etching the pattern formed on the surface of the silicon wafer by using mixed acid according to the hollow pattern exposed in the middle to form a circular groove; removing glue and other organic pollutants on the surface of the silicon wafer by using an organic solvent, and then slightly scrubbing by dipping acetone by using dust-free cloth or dust-free cotton; according to the invention, the circular groove is formed on the surface of the silicon wafer through the etching technology, so that the whole rectifying substrate has no corner, the current cannot concentrate to the corner in the flowing process, the problem that the existing vehicle-scale rectifying chip fails due to the fact that the corner is broken down in advance because the current at the corner concentrates is solved, and the capability of resisting reverse surge current of the vehicle-scale rectifying chip is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor wafers, in particular to a manufacturing method of a vehicle-scale rectifier chip.
Background
The automobile gauge grade chip is an automobile element, and the automobile gauge grade is a specification standard suitable for automobile electronic elements. China has become the largest automobile market in the world, the trend of electromotion and intellectualization promotes the great increase of the number of automobile chips, and the localization of automobile-scale chips has a scale foundation.
However, most of the conventional vehicle-scale rectifier chips are square or regular hexagon, and have short service life, poor reverse surge current resistance and poor stability; in addition, after the etching treatment, the incomplete photoresist treatment on the surface of the silicon wafer brings pollution to the manufacture of the rectifier chip, thereby influencing the subsequent chip manufacture and the design of diffusion junction depth parameters.
Disclosure of Invention
Solves the technical problem
Aiming at the defects in the prior art, the invention provides a manufacturing method of a vehicle gauge level rectifier chip, which solves the problems that most vehicle gauge level rectifier chips are square or regular hexagon, the service life is short, the reverse surge current resistance is poor, and the stability is poor; in addition, after the etching treatment, the incomplete photoresist treatment on the surface of the silicon wafer brings pollution to the manufacture of the rectifier chip, thereby influencing the subsequent chip manufacture and the design of diffusion junction depth parameters.
Technical scheme
In order to achieve the purpose, the invention is realized by the following technical scheme:
the manufacturing method of the vehicle-scale rectifier chip comprises the following steps:
s1: providing a silicon wafer in advance, coating photoresist on two sides of the silicon wafer and exposing according to a mask pattern to form a hollow pattern on the surface of the silicon wafer;
s2: etching the pattern formed on the surface of the silicon wafer by using mixed acid according to the exposed hollow pattern in the S1 to form a circular groove;
s3: removing glue and other organic pollutants on the surface of the silicon wafer by using an organic solvent, and then slightly scrubbing by dipping acetone by using dust-free cloth or dust-free cotton;
s4: preparing glass liquid in advance and carrying out electrophoresis to complete glass passivation of the silicon wafer;
s5: and (3) uniformly forming a nickel alloy layer on two sides of the silicon wafer by a chemical nickel plating mode, and finally obtaining the rectifier chip.
Further, before the provision of the silicon wafer is performed in step S1, the silicon wafer is subjected to an acid etching treatment, the silicon wafer after the acid etching treatment is cleaned using hamr' S cleaning, the silicon wafer is subjected to an alkali etching treatment at a predetermined temperature to remove oxides on the surface of the silicon wafer, and then the silicon wafer is cleaned by a hot pure water ultrasonic cleaning process and then dried.
Further, when the two sides of the silicon wafer are coated with the photoresist, the photoresist is coated on the two sides of the silicon wafer, and the photoresist is uniformly coated on the surface of the silicon wafer under the action of the centrifugal force generated by the rotation of the spin coater, wherein the rotation speed of the spin coater is 500-1000 r/min, and the low-speed rotation is 5-10 s; wherein the photoresist is irradiated by ultraviolet light, electron beams, ion beams or X rays, so that the solubility of the photoresist is changed, and a corrosion resistant agent etching film is formed and attached to the surface of the silicon wafer.
Further, the mixed acid comprises hydrofluoric acid, nitric acid, acetic acid and sulfuric acid, and the concentration ratio is hydrofluoric acid: nitric acid: acetic acid: sulfuric acid =8:8:10: 3.
Furthermore, the hollow pattern corresponds to the region to be corroded of the silicon wafer, the photoresist is a mask plate, the corrosion of the surface of the silicon wafer and the part to be cut of the hollow pattern is removed in an exposure mode, and the distance from the bottom end of the circular groove to the bottom surface of the silicon wafer ranges from 40 micrometers to 110 micrometers; the mask is used for bearing a designed hollow pattern, the light of a projection type photoetching machine penetrates through the mask, so that the designed pattern on the mask is projected on the photoresist, the surface of the silicon wafer is etched, and then a circular groove is formed on the surface of the silicon wafer.
Furthermore, the organic solvent can be acetone, methyl butanone or methyl isobutyl ketone, and the single dosage of the organic solvent is 100-300 ml.
Furthermore, the working voltage of the glass passivation is 190-240V, the ultrasonic oscillation current is 1.4-1.8A, and the working voltage of the tungsten halogen lamp is 150-190.
Further, the plating solution used for the electroless nickel plating is generally nickel sulfate, nickel acetate as main salts, hypophosphite, sodium borohydride, borane, hydrazine as reducing agents, and then various additives are added, and the electroless nickel plating is used for reducing metal ions in the raw solution and precipitating the metal ions onto the surface of the silicon wafer.
Furthermore, when the chemical nickel plating operation is carried out, the silicon wafer after the glass passivation treatment needs to be plated with a nickel layer in an acid solution at 85-90 ℃ or a neutral solution or an alkaline solution at the temperature close to 20-25 ℃.
In a second aspect, the manufacturing method of the car-size-class rectifying chip comprises the following steps:
s41: according to the glass powder: acetone: preparing glass liquid according to the preparation proportion of nitric acid =1:100:2 for later use;
s42: putting the silicon wafer into a prepared glass liquid container, and carrying out ultrasonic treatment within 8-15 min;
s43: the silicon wafer after ultrasonic treatment is placed on an electrophoresis rack in order, and then the power supply of the electrophoresis rack is switched on.
Advantageous effects
Compared with the known public technology, the technical scheme provided by the invention has the following beneficial effects:
1. according to the invention, the circular groove is formed on the surface of the silicon wafer through the etching technology, so that the whole rectifying substrate has no corner, the current cannot concentrate to the corner in the flowing process, the problem that the existing vehicle-scale rectifying chip fails due to the fact that the corner is punctured in advance because the current at the corner concentrates is solved, the reverse surge current resistance of the vehicle-scale rectifying chip is improved, and the service life of the vehicle-scale rectifying chip is ensured to be long; in addition, a nickel alloy layer is uniformly plated on the surface of the silicon wafer in a chemical nickel plating mode, so that the stability and the wear resistance of the turning-gauge rectifying chip are improved.
2. In the invention, the glass passivation layer is formed on the surface of the silicon wafer in an electrophoresis mode, so that the thickness of the glass passivation layer is thinner, and the glass layer of the area to be cut in the table surface of the chip and the circular groove can be effectively removed; in addition, the photoresist on the surface of the silicon wafer is removed by the organic solvent, so that the pollution depth of the turning-gauge-grade rectifying chip can be effectively reduced, and great convenience is brought to subsequent chip manufacturing and the design of diffusion junction depth parameters.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below. It is obvious that the drawings in the following description are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
FIG. 1 is a schematic flow chart of a method for manufacturing a rectifier chip according to the present invention;
fig. 2 is a schematic flow chart of a method for manufacturing a rectifier chip of the present invention:
FIG. 3 is a table of acid mixture ratios according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The present invention will be further described with reference to the following examples.
Example 1
The manufacturing method of the car-scale rectifier chip of the embodiment, as shown in fig. 1 to 3, includes the following steps:
s1: providing a silicon wafer in advance, coating photoresist on two sides of the silicon wafer and exposing according to a mask pattern to form a hollow pattern on the surface of the silicon wafer;
s2: etching the pattern formed on the surface of the silicon wafer by using mixed acid according to the exposed hollow pattern in the S1 to form a circular groove;
s3: removing glue and other organic pollutants on the surface of the silicon wafer by using an organic solvent, and then slightly scrubbing by dipping acetone by using dust-free cloth or dust-free cotton;
s4: preparing glass liquid in advance and carrying out electrophoresis to complete glass passivation of the silicon wafer;
s5: and (3) uniformly forming a nickel alloy layer on two sides of the silicon wafer by a chemical nickel plating mode, and finally obtaining the rectifier chip.
In this embodiment, before providing a silicon wafer, an acid etching treatment is performed on the silicon wafer by using a hydrofluoric acid solution, the silicon wafer after the acid etching treatment is cleaned by using hamar, then the silicon wafer is placed in a tetramethylammonium hydroxide solution with a temperature controlled at 50-80 ℃ and a volume concentration of 10-25% to perform an alkali etching treatment for 2-4 minutes, an oxide on the surface of the silicon wafer is removed, and then the silicon wafer is cleaned by a hot pure water ultrasonic cleaning process and dried, so that the cleaning of the silicon wafer is completed.
In the embodiment, the silicon wafer is chemically etched by using the mixed acid, the etching time is 500-800 s, and the concentration ratio is hydrofluoric acid: nitric acid: acetic acid: sulfuric acid =8:8:10: 3.
In this embodiment, when the photoresist is coated on both sides of the silicon wafer, and the photoresist is uniformly coated on the surface of the silicon wafer under the centrifugal force of the rotation of the spin coater.
In the embodiment, the prepared glass liquid is subjected to ultrasound for 8-15 min, and then the silicon wafer after the ultrasound is finished is orderly placed on an electrophoresis rack and the power supply of the electrophoresis rack is switched on.
According to the invention, the circular groove is formed on the surface of the silicon wafer through the etching technology, so that the whole rectifying substrate has no corner, the current cannot concentrate to the corner in the flowing process, the problem that the existing vehicle-scale rectifying chip fails due to the fact that the corners of the chip are punctured in advance because the current at the corners concentrates is solved, the reverse surge current resistance of the vehicle-scale rectifying chip is improved, and the service life of the vehicle-scale rectifying chip is ensured to be long; in addition, a nickel alloy layer is uniformly plated on the surface of the silicon wafer in a chemical nickel plating mode, so that the stability and the wear resistance of the turning-gauge rectifying chip are improved.
According to the invention, the glass passivation layer is formed on the surface of the silicon wafer in an electrophoresis mode, so that the thickness of the glass passivation layer is thinner, and the glass layer of the area to be cut in the chip table surface and the circular groove can be effectively removed; in addition, the photoresist on the surface of the silicon wafer is removed by the organic solvent, so that the pollution depth of the turning-gauge-grade rectifying chip can be effectively reduced, and great convenience is brought to subsequent chip manufacturing and the design of diffusion junction depth parameters.
Example 2
In the manufacturing method of the turning-rule-level rectifying chip of the embodiment, as shown in fig. 1, before the provision of the silicon wafer is performed in step S1, the silicon wafer is subjected to an acid etching treatment, the silicon wafer after the acid etching treatment is cleaned by using hamr, the silicon wafer is subjected to an alkali etching treatment at a predetermined temperature, an oxide on the surface of the silicon wafer is removed, and then the silicon wafer is cleaned by a hot pure water ultrasonic cleaning process and then dried.
In the embodiment, when the two sides of the silicon wafer are coated with the photoresist, the photoresist is coated on the two sides of the silicon wafer, and the photoresist is uniformly coated on the surface of the silicon wafer under the action of the centrifugal force generated by the rotation of the spin coater, wherein the rotation speed of the spin coater is 500-1000 r/min, and the low-speed rotation is 5-10 s; wherein the photoresist is irradiated by ultraviolet light, electron beam, ion beam or X-ray to change its solubility and form a resist etching film attached on the surface of the silicon wafer.
In this embodiment, if the rotation speed of the spin coater is 1500-6000 r/min, the spin coater rotates at a high speed for 10-120 s.
The mixed acid in this embodiment includes hydrofluoric acid, nitric acid, acetic acid, and sulfuric acid, and the concentration ratio is hydrofluoric acid: nitric acid: acetic acid: sulfuric acid =8:8:10: 3.
In the embodiment, the hollow pattern corresponds to a region to be corroded of the silicon wafer, the photoresist is a mask plate, the corrosion of the surface of the silicon wafer and the part to be cut of the hollow pattern is removed in an exposure mode, and the distance range from the bottom end of the circular groove to the bottom surface of the silicon wafer is preferably 40-110 micrometers; the mask is used for bearing a designed hollow pattern, light rays are transmitted through a projection type photoetching machine, the designed pattern on the mask is projected on the photoresist, the surface of the silicon wafer is etched, and then a circular groove is formed on the surface of the silicon wafer.
The organic solvent in this embodiment can be acetone, methyl butanone or methyl isobutyl ketone, and the single dosage range of the organic solvent is preferably 100 to 300 ml.
In the embodiment, the silicon wafer is chemically etched by using the mixed acid, and the etching time is preferably 500-800 s.
In the embodiment, the prepared glass liquid is subjected to ultrasound, the ultrasound time is preferably 8-15 min, then, the silicon wafers after the ultrasound is finished are orderly placed on an electrophoresis rack, and the power supply of the electrophoresis rack is switched on.
In the embodiment, the soaking time of the silicon wafer in the hydrofluoric acid solution is preferably 1-3 min, the temperature of the hydrofluoric acid solution is preferably 20-25 ℃, and hamar liquid is prepared by mixing hamar powder and water according to a mass ratio of preferably 1: 85, the set temperature range of the hot pure water is preferably 70-80 ℃, and the set time of the ultrasonic cleaning is preferably 8-12 min.
According to the invention, the glass passivation layer is formed on the surface of the silicon wafer in an electrophoresis mode, so that the thickness of the glass passivation layer is thinner, and the glass layer of the area to be cut in the chip table surface and the circular groove can be effectively removed; the photoresist on the surface of the silicon wafer is removed by the organic solvent, so that the pollution depth of the turning-gauge-grade rectifying chip can be effectively reduced, and great convenience is brought to subsequent chip manufacturing and the design of diffusion junction depth parameters.
Example 3
In this embodiment, the following supplementary method is performed for the manufacturing method of the car-scale rectifier chip, as shown in fig. 2, the method includes the following steps:
s41: according to the glass powder: acetone: preparing glass liquid according to the preparation proportion of nitric acid =1:100:2 for later use;
s42: putting the silicon wafer into a prepared glass liquid container, and carrying out ultrasonic treatment within 8-15 min;
s43: the silicon wafer after ultrasonic treatment is placed on an electrophoresis rack in order, and then the power supply of the electrophoresis rack is switched on.
The working voltage of the glass passivation in the embodiment is preferably 190-240V, the ultrasonic oscillation current is preferably 1.4-1.8A, and the working voltage of the tungsten halogen lamp is preferably 150-190.
The plating solution used in the electroless nickel plating of this embodiment generally uses nickel sulfate and nickel acetate as main salts, hypophosphites, sodium borohydride, borane and hydrazine as reducing agents, and then various auxiliary agents are added, and the electroless nickel plating is used for reducing metal ions in the raw solution and precipitating the metal ions onto the surface of the silicon wafer.
In this embodiment, when performing the electroless nickel plating operation, the silicon wafer after the glass passivation treatment needs to be plated with a nickel layer in an acidic solution at a temperature of preferably 85 to 90 ℃ or a neutral solution or an alkaline solution at a temperature close to 20 to 25 ℃.
According to the invention, the glass passivation layer is formed on the surface of the silicon wafer in an electrophoresis mode, so that the thickness of the glass passivation layer is thinner, and the glass layer of the area to be cut in the chip table surface and the circular groove can be effectively removed; the surface of the silicon wafer is evenly plated with a nickel alloy layer by a chemical nickel plating mode so as to improve the stability and the wear resistance of the turning-gauge rectifying chip.
Example 4
In a specific implementation level, the embodiment provides a specific use of the manufacturing method of the vehicle-scale rectification chip, which specifically includes the following steps:
in this embodiment, before providing a silicon wafer, an acid etching treatment is performed on the silicon wafer by using a hydrofluoric acid solution, the silicon wafer after the acid etching treatment is cleaned by using hamar, then the silicon wafer is placed in a tetramethylammonium hydroxide solution with a temperature controlled at 50-80 ℃ and a volume concentration of 10-25% to perform an alkali etching treatment for 2-4 minutes, an oxide on the surface of the silicon wafer is removed, and then the silicon wafer is cleaned by a hot pure water ultrasonic cleaning process and dried, so that the cleaning of the silicon wafer is completed.
In this example, the photoresist was coated on both sides of the silicon wafer, and the photoresist was uniformly coated on the surface of the silicon wafer by the centrifugal force of the rotation of the spin coater.
In this embodiment, the photoresist layer has a hollow pattern in an exposure and development manner, the hollow pattern corresponds to a region of the silicon wafer where the trench is to be etched, and then the silicon wafer with the photoresist layer is placed in the mixed acid to be etched to form the circular trench.
In this example, the photoresist on the surface of the silicon wafer was soaked with an organic solvent to be soft, and then lightly scrubbed with acetone using a dust-free cloth or a dust-free cotton, and brushed with a brush.
In the embodiment, glass liquid is prepared in advance, the prepared glass liquid is subjected to ultrasonic treatment for 8-15 min, then the silicon wafers after the ultrasonic treatment are placed on an electrophoresis rack in order, and a power supply of the electrophoresis rack is switched on, so that a glass passivation layer is formed on the surfaces of the silicon wafers.
The plating solution of the embodiment preferably uses nickel sulfate or nickel acetate as a main salt, hypophosphite, sodium borohydride, borane or hydrazine as a reducing agent, and then various auxiliary agents are added, so as to finally form a nickel alloy layer uniformly on the surface of the silicon wafer, thereby obtaining the rectifying chip.
In conclusion, the circular groove is formed on the surface of the silicon wafer through the etching technology, so that the whole rectifying substrate has no corner, the current cannot concentrate to the corner in the flowing process, the problem that the corner of the existing vehicle-scale rectifying chip fails due to the fact that the current at the corner concentrates and the corner of the chip is broken down in advance is solved, the reverse surge current resistance of the vehicle-scale rectifying chip is improved, and the service life of the vehicle-scale rectifying chip is ensured to be long; in addition, a nickel alloy layer is uniformly plated on the surface of the silicon wafer in a chemical nickel plating mode, so that the stability and the wear resistance of the turning-gauge rectifying chip are improved.
Forming a glass passivation layer on the surface of the silicon wafer in an electrophoresis mode, so that the thickness of the glass passivation layer is thinner, and the glass layer of the area to be cut in the chip table surface and the circular groove can be effectively removed; in addition, the photoresist on the surface of the silicon wafer is removed by the organic solvent, so that the pollution depth of the turning-gauge-grade rectifying chip can be effectively reduced, and great convenience is brought to subsequent chip manufacturing and the design of diffusion junction depth parameters.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the corresponding technical solutions.
Claims (8)
1. The manufacturing method of the vehicle-scale rectifier chip is characterized by comprising the following steps of: the method comprises the following steps:
s1: providing a silicon wafer in advance, coating photoresist on two sides of the silicon wafer and exposing according to a mask pattern to form a hollow pattern on the surface of the silicon wafer;
s2: etching the pattern formed on the surface of the silicon wafer by using mixed acid according to the exposed hollow pattern in the S1 to form a circular groove;
s3: removing glue and organic pollutants on the surface of the silicon wafer by using an organic solvent, and then slightly scrubbing by using dust-free cloth or dust-free cotton dipped with acetone;
s4: preparing glass liquid in advance and carrying out electrophoresis to complete glass passivation of the silicon wafer;
s5: uniformly forming nickel alloy layers on two sides of the silicon wafer by a chemical nickel plating mode, and finally obtaining a rectifying chip;
the organic solvent is acetone, methyl butanone or methyl isobutyl ketone, and the single dosage of the organic solvent is 100-300 ml;
the hollowed-out pattern corresponds to a region to be corroded of the silicon wafer, the photoresist is a mask plate, the corrosion of the surface of the silicon wafer and the part to be cut of the hollowed-out pattern is removed in an exposure mode, and the distance from the bottom end of the circular groove to the bottom surface of the silicon wafer ranges from 40 micrometers to 110 micrometers; the mask is used for bearing a designed hollow pattern, the light of a projection type photoetching machine penetrates through the mask, so that the designed pattern on the mask is projected on the photoresist, the surface of the silicon wafer is etched, and then a circular groove is formed on the surface of the silicon wafer.
2. The method for manufacturing a vehicle-scale rectification chip according to claim 1, wherein before the step S1 of providing the silicon wafer, the silicon wafer is subjected to an acid etching treatment, the silicon wafer after the acid etching treatment is cleaned by using hamr, the silicon wafer is subjected to an alkali etching treatment at a predetermined temperature to remove oxides on the surface of the silicon wafer, and then the silicon wafer is cleaned by a hot pure water ultrasonic cleaning process and then dried.
3. The manufacturing method of the turning-gauge-grade rectifying chip as claimed in claim 1, wherein when coating the photoresist on the two sides of the silicon wafer, the photoresist is coated on the two sides of the silicon wafer, under the centrifugal force of the rotation of the spin coater, the photoresist is uniformly coated on the surface of the silicon wafer, and the rotation speed of the spin coater is 500-1000 r/min, and the low-speed rotation is 5-10 s; wherein the photoresist is irradiated by ultraviolet light, electron beams, ion beams or X rays, so that the solubility of the photoresist is changed, and a corrosion resistant agent etching film is formed and attached to the surface of the silicon wafer.
4. The method of claim 1, wherein the mixed acid comprises hydrofluoric acid, nitric acid, acetic acid, and sulfuric acid, and the concentration ratio is hydrofluoric acid: nitric acid: acetic acid: sulfuric acid =8:8:10: 3.
5. The method for manufacturing the vehicle-scale rectifier chip according to claim 1, wherein the operating voltage of the glass passivation is 190-240V, the ultrasonic oscillation current is 1.4-1.8A, and the operating voltage of the tungsten halogen lamp is 150-190.
6. The method for manufacturing the vehicular-scale rectification chip according to claim 1, wherein the plating solution used for the electroless nickel plating is mainly composed of nickel sulfate and nickel acetate, and is composed of hypophosphite, sodium borohydride, borane and hydrazine, and various auxiliaries are added, and the electroless nickel plating is used for reducing metal ions in the original solution and depositing the metal ions on the surface of the silicon wafer.
7. The method for manufacturing the vehicle-scale rectifier chip according to claim 1, wherein the silicon wafer after the glass passivation treatment is subjected to nickel plating in an acidic solution at 85 to 90 ℃ or a neutral solution at 20 to 25 ℃ or an alkaline solution during the electroless nickel plating operation.
8. The method for manufacturing the vehicle-scale rectification chip according to claim 1, wherein the step S4 includes the following sub-steps:
s41: preparing glass liquid by using glass powder, acetone and nitric acid according to a certain proportion for later use;
s42: putting the silicon wafer into a prepared glass liquid container, and carrying out ultrasonic treatment within a preset time;
s43: the silicon wafer after ultrasonic treatment is placed on an electrophoresis rack in order, and then the power supply of the electrophoresis rack is switched on.
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| CN103560143B (en) * | 2013-10-31 | 2017-01-18 | 安徽安芯电子科技有限公司 | Automobile rectification chip and method for manufacturing rectification base material thereof |
| CN104362172B (en) * | 2014-10-15 | 2018-09-11 | 杰华特微电子（杭州）有限公司 | Semiconductor chip structure with end ring and its manufacturing method |
| CN105405896A (en) * | 2015-12-30 | 2016-03-16 | 天津天物金佰微电子有限公司 | Glass passivation high-voltage bidirectional trigger diode and preparation process |
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| JP2000235977A (en) * | 1999-02-15 | 2000-08-29 | Toshiba Corp | Semiconductor device of such structure that diffusion of copper is restrained, and its manufacture, and method of detecting diffused copper |
| EP1146014A2 (en) * | 2000-04-11 | 2001-10-17 | Applied Materials, Inc. | Mesoporous silica films with mobile ion gettering and accelerated processing |
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