CN105405896A - Glass passivation high-voltage bidirectional trigger diode and preparation process - Google Patents
Glass passivation high-voltage bidirectional trigger diode and preparation process Download PDFInfo
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- CN105405896A CN105405896A CN201511032825.2A CN201511032825A CN105405896A CN 105405896 A CN105405896 A CN 105405896A CN 201511032825 A CN201511032825 A CN 201511032825A CN 105405896 A CN105405896 A CN 105405896A
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- 230000002457 bidirectional effect Effects 0.000 title claims abstract description 25
- 238000002161 passivation Methods 0.000 title claims abstract description 24
- 239000011521 glass Substances 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 238000009792 diffusion process Methods 0.000 claims abstract description 53
- 229910052796 boron Inorganic materials 0.000 claims abstract description 35
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 29
- 230000007797 corrosion Effects 0.000 claims abstract description 28
- 238000005260 corrosion Methods 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000126 substance Substances 0.000 claims abstract description 16
- 238000001962 electrophoresis Methods 0.000 claims abstract description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 12
- 239000011574 phosphorus Substances 0.000 claims abstract description 12
- 238000005498 polishing Methods 0.000 claims abstract description 8
- JCALBVZBIRXHMQ-UHFFFAOYSA-N [[hydroxy-(phosphonoamino)phosphoryl]amino]phosphonic acid Chemical group OP(O)(=O)NP(O)(=O)NP(O)(O)=O JCALBVZBIRXHMQ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 36
- 239000007788 liquid Substances 0.000 claims description 33
- 239000000203 mixture Substances 0.000 claims description 33
- 238000006396 nitration reaction Methods 0.000 claims description 33
- 230000003647 oxidation Effects 0.000 claims description 22
- 238000007254 oxidation reaction Methods 0.000 claims description 22
- 238000001259 photo etching Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 19
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 238000005516 engineering process Methods 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 9
- 229960000583 acetic acid Drugs 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 9
- 239000012362 glacial acetic acid Substances 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000007747 plating Methods 0.000 claims description 7
- 150000001638 boron Chemical class 0.000 claims description 6
- 230000001680 brushing effect Effects 0.000 claims description 6
- 238000010304 firing Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000010422 painting Methods 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- 238000003756 stirring Methods 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 abstract description 4
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000002241 glass-ceramic Substances 0.000 abstract 1
- 238000001459 lithography Methods 0.000 abstract 1
- 230000011218 segmentation Effects 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66121—Multilayer diodes, e.g. PNPN diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66136—PN junction diodes
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Abstract
The invention provides a glass passivation high-voltage bidirectional trigger diode. The preparation process of the glass passivation high-voltage bidirectional trigger diode includes the following steps that: step 1, chemical polishing is performed on a P type silicon wafer; step 2, two surfaces of the wafer are coated with phosphorus, phosphorus diffusion is carried out; step 3, an oxide layer is produced; step 4, a boron diffusion window of a short-circuit electrode layer is produced, and a short-circuit control electrode is obtained through boron diffusion, and a double-surface PNPNP structure can be formed; step 5, an oxide layer is produced; step 6, a boron surface contact diffusion window is produced, and a surface contact electrode layer can be obtained through boron diffusion, and therefore, a double-surface P+PNPNPP+ structure can be obtained; step 7, an oxide layer is produced; step 8, the two surfaces of the wafer are coated with an adhesive, and a deep trench corrosion area is formed through adopting at third double-surface alignment lithography, and glass coating is carried out through adopting electrophoresis, and a glass-ceramic passivation layer can be formed through sintering; step 9, an ohmic short-circuit control electrode layer is produced; step 10, slice segmentation is carried out; and step 11, encapsulation is carried out. With the preparation process of the invention adopted, the normal-temperature and high-temperature performance of the diode is improved, and the stability of the device is improved; and the device has a wide application range.
Description
Technical field
The invention belongs to diode manufacturing technology field, especially relate to a kind of glassivation high-voltage bidirectional diac and preparation technology.
Background technology
High-voltage bidirectional diac (SIDAC) is a kind of two end semiconductor device, its internal structure and bidirectional thyristor quite similar, difference be not trigger gate pole, be that voltage is from trigger device.The operating state of SIDAC is as same switch, and when voltage is lower than off-state crest voltage VDRM, its leakage current IDRM minimum (being less than a microampere magnitude), is off state; When voltage exceedes its puncture voltage UBO, produce moment avalanche effect, this avalanche current, once exceed switching current IS, namely enters avalanche multiplication, under avalanche multiplication, the impedance of device reduces suddenly, voltage reduces to conducting voltage (V<1.5V), and now, SIDAC enters conducting state, allow by large on state current (0.7-2A, RMS value), when electric current drops under extinction current IH value, SIDAC returns to off-state.
At present, the Making programme of high-voltage bidirectional diac is: chemico-mechanical polishing, and boron spreads, oxidation, a photoetching, phosphorus spreads, secondary photoetching, a glass burns and is coated with, and secondary glass is burnt and is coated with, three glass burn and are coated with, third photo etching, plating nickel gold, scribing, pickling and encapsulation, there is following defect in it: 1, and repeatedly glass burns to be coated with and just can obtain resisting the devitrified glass worn, production process complexity is various, and production efficiency is poor, and cost is high; 2, repetitive peak off state current is larger; 3, poor reliability, withstanding current capability is poor.
Summary of the invention
In view of this, the present invention is intended to propose a kind of glassivation high-voltage bidirectional diac and preparation technology, to solve the restrictive condition of the existence in current high-voltage bidirectional diac manufacturing process.
For achieving the above object, technical scheme of the present invention is achieved in that a kind of glassivation high-voltage bidirectional diac, comprise the silicon chip of NPN three-decker, the double-sided symmetrical photoetching corrosion of described silicon chip has boron diffusion window, short-circuiting electrode layer is had in this boron diffusion window, boron diffusion window is arranged at this short-circuiting electrode layer top also photoetching, surface contact electrodes layer is had in this boron diffusion window, form two-sided P+PNPNPP+ structure, this two-sided P+PNPNPP+ structure goes back photoetching corrosion and has electrophoresis passivation groove, devitrified glass passivation layer is had in this electrophoresis passivation groove, this two-sided P+PNPNPP+ structure double-sided symmetrical is provided with ohmic short control electrode layer.
Further, described ohmic short control electrode layer is nickel dam and layer gold.
Further, the lead frame also including weld tabs and be connected with weld tabs, described device package is in epoxy resin.
A preparation technology for glassivation high-voltage bidirectional diac, comprises following preparation method:
Step 1, use the p-type silicon chip that thickness is 215-225 micron to carry out chemical polishing by nitration mixture No. 1 corrosive liquid, the silicon wafer thickness after polishing is 195-205 micron;
Step 2, above-mentioned sheet material is done two-sided spin coating brush phosphorus source, then push diffusion furnace and carry out phosphorus preliminary drying and diffusion, form the silicon chip of NPN three-decker, wherein, spin coating brush rotating speed is 600 revs/min, and before pushing diffusion furnace, furnace temperature is 300 °, uses nitrogen protection, carry out phosphorus source preliminary drying, main diffusion temperature is 1200-1250 °, and the main diffusion time is 3-5 hour, and the thickness of phosphorus-diffused layer is 38-40 micron;
Step 3, the two-sided of above-mentioned sheet material is cooked first time oxidation processes, and the oxidated layer thickness obtained is 1.6-1.9 micron;
Step 4, above-mentioned sheet material is done double spread, first time double-sided alignment photoetching, form shallow Grooving patterns, the i.e. boron diffusion window of short-circuiting electrode layer, by obtaining shallow slot after nitration mixture No. 2 corrosive liquid corrosion, the degree of depth of shallow slot is 3-5 micron, above-mentioned sheet material is done two-sided painting boron source, the rotating speed revolving brushing technique is 600 revs/min, the two-sided of above-mentioned sheet material is cooked a boron diffusion, wherein, push front furnace temperature to be 300 ° and to carry out preliminary drying, use nitrogen protection, main diffusion temperature is 1220-1250 °, the main diffusion time is 4-6 hour, the short-circuiting electrode layer thickness obtained is 15-35 micron, obtain two-sided PNPNP structure,
Step 5, the two-sided of above-mentioned sheet material is cooked second time oxidation processes, and the oxidated layer thickness obtained is 1.6-1.9 micron;
Step 6, by above-mentioned sheet material double spread, the photoetching of second time double-sided alignment, forms boron surface contact diffusion window; By two-sided for above-mentioned sheet material painting secondary boron source, the rotating speed of brushing technique is 600 revs/min; The temperature of boron diffusion is 1100-1150 °, and diffusion time is 4-6 hour, and the thickness of the surface contact electrodes layer obtained is 5-7 micron, obtains two-sided P+PNPNPP+ structure;
Step 7, the two-sided of above-mentioned sheet material is cooked third time oxidation processes, and the oxidated layer thickness obtained is 1.2-1.6 micron;
Step 8, by the double spread of above-mentioned sheet material, third time double-sided alignment photoetching, forms deep trench corrosion area, and by forming electrophoresis passivation groove after nitration mixture No. 3 corrosive liquid corrosion, the degree of depth of electrophoresis passivation groove is 50-60 micron; By electro coat glass, burn till process and form devitrified glass passivation layer;
Step 9, the double side chemical nickel plating of above-mentioned sheet material, double side chemical is gold-plated, form ohmic short control electrode layer;
Step 10, by above-mentioned sheet material scribing cutting, forms one single chip;
Step 11, encapsulates said chip, forms finished product diode.
Further, No. 1 corrosion liquid formula of the nitration mixture in described step 1 is: 12 parts, nitric acid, hydrofluoric acid (49%) 2-4 part, glacial acetic acid 4 parts, 1 part, water, stir 30 minutes after described nitration mixture No. 1 corrosive liquid proportioning, the etching time of described nitration mixture No. 1 corrosive liquid is normal temperature 10-13 minute.
Further, No. 2 corrosion liquid formulas of the nitration mixture in described step 4 are: 12 parts, nitric acid, hydrofluoric acid (49%) 1-2 part, glacial acetic acid 4 parts, 1 part, water, stir 30 minutes after described nitration mixture No. 2 corrosive liquid proportionings, the etching time of described nitration mixture No. 1 corrosive liquid is normal temperature 5-8 minute.
Further, No. 3 corrosion liquid formulas of the nitration mixture in described step 8 are: 12 parts, nitric acid, hydrofluoric acid (49%) 5-8 part, glacial acetic acid 4 parts, 1 part, water, and the etching time of described nitration mixture No. 1 corrosive liquid is normal temperature 10-13 minute, and corrosion temperature is-6--9 °.
Further, the oxidation treatment step in described step 3, step 5, step 7 comprises dry-oxygen oxidation, wet-oxygen oxidation, dry-oxygen oxidation, and the time is respectively 30 minutes, 60 minutes, 30 minutes.
Further, in described step 8, glass firing temperature is 820 °, and firing time is 30 minutes.
Further, in described step 9, the thickness of chemical nickel plating is 4-6 micron, and the thickness of chemical gilding is 0.5-1.0 micron.
Relative to prior art, glassivation high-voltage bidirectional diac of the present invention and preparation technology have following advantage:
(1) preparation technology of the present invention improves normal temperature and the high-temperature behavior of device, improves the stability of device, is widely used;
(2) preparation technology of the present invention prepares devitrified glass passivation layer by electrophoresis, and technique is advanced, and production cost is low, and reliability is high, and electrical quantity performance is improved greatly.
Accompanying drawing explanation
The accompanying drawing forming a part of the present invention is used to provide a further understanding of the present invention, and schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 is the structural representation of the diode chip described in the embodiment of the present invention;
Fig. 2 is the structural representation of the diode chip described in the embodiment of the present invention;
Fig. 3 is the side-looking internal structure schematic diagram of the SMA encapsulation diode finished product described in the embodiment of the present invention;
Fig. 4 is the internal structure schematic diagram of the axis encapsulation finished product diode described in the embodiment of the present invention.
Description of reference numerals:
1-chip; 2-weld tabs; 3-epoxy resin; 4-lead frame; 11-silicon chip; 21-phosphorus-diffused layer; ; 31-short-circuiting electrode layer; 41-surface contact electrodes layer; 51-ohmic short control electrode layer; 61-devitrified glass passivation layer.
Embodiment
It should be noted that, when not conflicting, the embodiment in the present invention and the feature in embodiment can combine mutually.
1-4 also describes the present invention in detail in conjunction with the embodiments below with reference to the accompanying drawings.
A kind of glassivation high-voltage bidirectional diac, comprise the silicon chip 11 of NPN three-decker, the double-sided symmetrical photoetching corrosion of described silicon chip 11 has boron diffusion window, short-circuiting electrode layer 31 is had in this boron diffusion window, boron diffusion window is arranged at this short-circuiting electrode layer 31 top also photoetching, surface contact electrodes layer 41 is had in this boron diffusion window, form two-sided P+PNPNPP+ structure, this two-sided P+PNPNPP+ structure goes back photoetching corrosion and has electrophoresis passivation groove, devitrified glass passivation layer 61 is had in this electrophoresis passivation groove, this two-sided P+PNPNPP+ structure double-sided symmetrical is provided with ohmic short control electrode layer 51.
Described ohmic short control electrode layer 51 is nickel dam and layer gold.
The lead frame 4 also including weld tabs 2 and be connected with weld tabs 2, described device package is in epoxy resin 3, and described lead frame 4 is copper lead-in wire.
A preparation technology for glassivation high-voltage bidirectional diac, comprises following preparation method:
Step 1, use the p-type silicon chip 11 that thickness is 215-225 micron, the resistivity of described silicon chip 11 is p-type 2-40 ohm/cm, crystal orientation <100>, carry out chemical polishing by nitration mixture No. 1 corrosive liquid, silicon chip 11 thickness after polishing is 195-205 micron;
Nitration mixture in described step 1 No. 1 corrosion liquid formula is: 12 parts, nitric acid, hydrofluoric acid (49%) 2-4 part, glacial acetic acid 4 parts, 1 part, water, stir 30 minutes after described nitration mixture No. 1 corrosive liquid proportioning, the etching time of described nitration mixture No. 1 corrosive liquid is normal temperature 10-13 minute;
Step 2, above-mentioned sheet material is done two-sided spin coating brush phosphorus source, then push diffusion furnace and carry out phosphorus preliminary drying and diffusion, form the silicon chip 11 of NPN three-decker, wherein, spin coating brush rotating speed is 600 revs/min, and before pushing diffusion furnace, furnace temperature is 300 °, uses nitrogen protection, carry out phosphorus source preliminary drying, main diffusion temperature is 1200-1250 °, and the main diffusion time is 3-5 hour, and the thickness of phosphorus-diffused layer 21 is 38-40 micron;
Step 3, the two-sided of above-mentioned sheet material is cooked first time oxidation processes, and the oxidated layer thickness obtained is 1.6-1.9 micron;
Step 4, above-mentioned sheet material is done double spread, first time double-sided alignment photoetching, form shallow Grooving patterns, the i.e. boron diffusion window of short-circuiting electrode layer 31, by obtaining shallow slot after nitration mixture No. 2 corrosive liquid corrosion, the degree of depth of shallow slot is 3-5 micron, above-mentioned sheet material is done two-sided painting boron source, the rotating speed revolving brushing technique is 600 revs/min, the two-sided of above-mentioned sheet material is cooked a boron diffusion, wherein, push front furnace temperature to be 300 ° and to carry out preliminary drying, use nitrogen protection, main diffusion temperature is 1220-1250 °, the main diffusion time is 4-6 hour, short-circuiting electrode layer 31 thickness obtained is 15-35 micron, obtain two-sided PNPNP structure,
Nitration mixture in described step 4 No. 2 corrosion liquid formulas are: 12 parts, nitric acid, hydrofluoric acid (49%) 1-2 part, glacial acetic acid 4 parts, 1 part, water, stir 30 minutes after described nitration mixture No. 2 corrosive liquid proportionings, the etching time of described nitration mixture No. 1 corrosive liquid is normal temperature 5-8 minute;
Step 5, the two-sided of above-mentioned sheet material is cooked second time oxidation processes, and the oxidated layer thickness obtained is 1.6-1.9 micron;
Step 6, by above-mentioned sheet material double spread, the photoetching of second time double-sided alignment, forms boron surface contact diffusion window; By two-sided for above-mentioned sheet material painting secondary boron source, the rotating speed of brushing technique is 600 revs/min; The temperature of boron diffusion is 1100-1150 °, and diffusion time is 4-6 hour, and the thickness of the surface contact electrodes layer 41 obtained is 5-7 micron, obtains two-sided P+PNPNPP+ structure;
Step 7, the two-sided of above-mentioned sheet material is cooked third time oxidation processes, and the oxidated layer thickness obtained is 1.2-1.6 micron;
Step 8, by the double spread of above-mentioned sheet material, third time double-sided alignment photoetching, forms deep trench corrosion area, and by forming electrophoresis passivation groove after nitration mixture No. 3 corrosive liquid corrosion, the degree of depth of electrophoresis passivation groove is 50-60 micron; By electro coat glass, burn till process and form devitrified glass passivation layer 61, glass firing temperature is 820 °, and firing time is 30 minutes;
Nitration mixture in described step 8 No. 3 corrosion liquid formulas are: 12 parts, nitric acid, hydrofluoric acid (49%) 5-8 part, glacial acetic acid 4 parts, 1 part, water, and the etching time of described nitration mixture No. 1 corrosive liquid is normal temperature 10-13 minute, and corrosion temperature is-6--9 °;
Step 9, the double side chemical nickel plating of above-mentioned sheet material, double side chemical is gold-plated, and form ohmic short control electrode layer 51, the thickness of chemical nickel plating is 5-5.5 micron, and the thickness of chemical gilding is 0.5-0.6 micron;
Step 10, by above-mentioned sheet material scribing cutting, forms one single chip 1;
Step 11, encapsulates said chip 1, forms finished product diode.
Oxidation treatment step in described step 3, step 5, step 7 comprises dry-oxygen oxidation, wet-oxygen oxidation, dry-oxygen oxidation, and the time is respectively 30 minutes, 60 minutes, 30 minutes.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a glassivation high-voltage bidirectional diac, comprise the silicon chip of NPN three-decker, it is characterized in that: the double-sided symmetrical photoetching corrosion of described silicon chip (11) has boron diffusion window, short-circuiting electrode layer (31) is had in this boron diffusion window, boron diffusion window is arranged at this short-circuiting electrode layer (31) top also photoetching, surface contact electrodes layer (41) is had in this boron diffusion window, form two-sided P+PNPNPP+ structure, this two-sided P+PNPNPP+ structure goes back photoetching corrosion and has electrophoresis passivation groove, devitrified glass passivation layer (61) is had in this electrophoresis passivation groove, this two-sided P+PNPNPP+ structure double-sided symmetrical is provided with ohmic short control electrode layer (51).
2. a kind of glassivation high-voltage bidirectional diac according to claim 1, is characterized in that: described ohmic short control electrode layer (51) is nickel dam and layer gold.
3. a kind of glassivation high-voltage bidirectional diac according to claim 1, it is characterized in that: the lead frame (4) also including weld tabs (2) and be connected with weld tabs (2), described device package is in epoxy resin (3).
4. a preparation technology for glassivation high-voltage bidirectional diac, is characterized in that, comprises following preparation method:
Step 1, use the p-type silicon chip (11) that thickness is 215-225 micron to carry out chemical polishing by nitration mixture No. 1 corrosive liquid, silicon chip (11) thickness after polishing is 195-205 micron;
Step 2, above-mentioned sheet material is done two-sided spin coating brush phosphorus source, then push diffusion furnace and carry out phosphorus preliminary drying and diffusion, form the silicon chip (11) of NPN three-decker, wherein, spin coating brush rotating speed is 600 revs/min, and before pushing diffusion furnace, furnace temperature is 300 °, uses nitrogen protection, carry out phosphorus source preliminary drying, main diffusion temperature is 1200-1250 °, and the main diffusion time is 3-5 hour, and the thickness of phosphorus-diffused layer is 38-40 micron;
Step 3, the two-sided of above-mentioned sheet material is cooked first time oxidation processes, and the oxidated layer thickness obtained is 1.6-1.9 micron;
Step 4, above-mentioned sheet material is done double spread, first time double-sided alignment photoetching, form shallow Grooving patterns, the i.e. boron diffusion window of short-circuiting electrode layer (31), by obtaining shallow slot after nitration mixture No. 2 corrosive liquid corrosion, the degree of depth of shallow slot is 3-5 micron, above-mentioned sheet material is done two-sided painting boron source, the rotating speed revolving brushing technique is 600 revs/min, the two-sided of above-mentioned sheet material is cooked a boron diffusion, wherein, push front furnace temperature to be 300 ° and to carry out preliminary drying, use nitrogen protection, main diffusion temperature is 1220-1250 °, the main diffusion time is 4-6 hour, short-circuiting electrode layer (31) thickness obtained is 15-35 micron, obtain two-sided PNPNP structure,
Step 5, the two-sided of above-mentioned sheet material is cooked second time oxidation processes, and the oxidated layer thickness obtained is 1.6-1.9 micron;
Step 6, by above-mentioned sheet material double spread, the photoetching of second time double-sided alignment, forms boron surface contact diffusion window; By two-sided for above-mentioned sheet material painting secondary boron source, the rotating speed of brushing technique is 600 revs/min; The temperature of boron diffusion is 1100-1150 °, and diffusion time is 4-6 hour, and the thickness of the surface contact electrodes layer (41) obtained is 5-7 micron, obtains two-sided P+PNPNPP+ structure;
Step 7, the two-sided of above-mentioned sheet material is cooked third time oxidation processes, and the oxidated layer thickness obtained is 1.2-1.6 micron;
Step 8, by the double spread of above-mentioned sheet material, third time double-sided alignment photoetching, forms deep trench corrosion area, and by forming electrophoresis passivation groove after nitration mixture No. 3 corrosive liquid corrosion, the degree of depth of electrophoresis passivation groove is 50-60 micron; By electro coat glass, burn till process and form devitrified glass passivation layer (61);
Step 9, the double side chemical nickel plating of above-mentioned sheet material, double side chemical is gold-plated, form ohmic short control electrode layer (51);
Step 10, by above-mentioned sheet material scribing cutting, forms one single chip (1);
Step 11, encapsulates said chip (1), forms finished product diode.
5. the preparation technology of a kind of glassivation high-voltage bidirectional diac according to claim 4, it is characterized in that: No. 1 corrosion liquid formula of the nitration mixture in described step 1 is: 12 parts, nitric acid, hydrofluoric acid (49%) 2-4 part, glacial acetic acid 4 parts, 1 part, water, stir 30 minutes after described nitration mixture No. 1 corrosive liquid proportioning, the etching time of described nitration mixture No. 1 corrosive liquid is normal temperature 10-13 minute.
6. the preparation technology of a kind of glassivation high-voltage bidirectional diac according to claim 4, it is characterized in that: No. 2 corrosion liquid formulas of the nitration mixture in described step 4 are: 12 parts, nitric acid, hydrofluoric acid (49%) 1-2 part, glacial acetic acid 4 parts, 1 part, water, stir 30 minutes after described nitration mixture No. 2 corrosive liquid proportionings, the etching time of described nitration mixture No. 1 corrosive liquid is normal temperature 5-8 minute.
7. the preparation technology of a kind of glassivation high-voltage bidirectional diac according to claim 4, it is characterized in that: No. 3 corrosion liquid formulas of the nitration mixture in described step 8 are: 12 parts, nitric acid, hydrofluoric acid (49%) 5-8 part, glacial acetic acid 4 parts, 1 part, water, the etching time of described nitration mixture No. 1 corrosive liquid is normal temperature 10-13 minute, and corrosion temperature is-6--9 °.
8. the preparation technology of a kind of glassivation high-voltage bidirectional diac according to claim 4, it is characterized in that: the oxidation treatment step in described step 3, step 5, step 7 comprises dry-oxygen oxidation, wet-oxygen oxidation, dry-oxygen oxidation, the time is respectively 30 minutes, 60 minutes, 30 minutes.
9. the preparation technology of a kind of glassivation high-voltage bidirectional diac according to claim 4, it is characterized in that: in described step 8, glass firing temperature is 820 °, firing time is 30 minutes.
10. the preparation technology of a kind of glassivation high-voltage bidirectional diac according to claim 4, is characterized in that: in described step 9, the thickness of chemical nickel plating is 4-6 micron, and the thickness of chemical gilding is 0.5-1.0 micron.
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