CN109755111A - Method for manufacturing bidirectional TVS chip by adopting printing process - Google Patents
Method for manufacturing bidirectional TVS chip by adopting printing process Download PDFInfo
- Publication number
- CN109755111A CN109755111A CN201711057481.XA CN201711057481A CN109755111A CN 109755111 A CN109755111 A CN 109755111A CN 201711057481 A CN201711057481 A CN 201711057481A CN 109755111 A CN109755111 A CN 109755111A
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- printing
- cleaning
- diffusion
- wool
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 100
- 238000007639 printing Methods 0.000 title claims abstract description 66
- 230000008569 process Effects 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 230000002457 bidirectional effect Effects 0.000 title abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 165
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 164
- 239000010703 silicon Substances 0.000 claims abstract description 164
- 238000009792 diffusion process Methods 0.000 claims abstract description 59
- 239000011521 glass Substances 0.000 claims abstract description 51
- 238000012360 testing method Methods 0.000 claims abstract description 24
- 238000002161 passivation Methods 0.000 claims abstract description 20
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 14
- 239000011574 phosphorus Substances 0.000 claims abstract description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052796 boron Inorganic materials 0.000 claims abstract description 13
- 238000001465 metallisation Methods 0.000 claims abstract description 7
- 238000002360 preparation method Methods 0.000 claims abstract description 3
- 238000004140 cleaning Methods 0.000 claims description 54
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 42
- 210000002268 wool Anatomy 0.000 claims description 31
- 235000008216 herbs Nutrition 0.000 claims description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 29
- 239000003292 glue Substances 0.000 claims description 26
- 238000005516 engineering process Methods 0.000 claims description 24
- 229910052759 nickel Inorganic materials 0.000 claims description 22
- 230000001681 protective effect Effects 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 20
- 238000007747 plating Methods 0.000 claims description 16
- 239000002253 acid Substances 0.000 claims description 14
- 238000007650 screen-printing Methods 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 230000007797 corrosion Effects 0.000 claims description 12
- 238000005260 corrosion Methods 0.000 claims description 12
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 10
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 8
- 229910052681 coesite Inorganic materials 0.000 claims description 7
- 229910052906 cristobalite Inorganic materials 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 229910052682 stishovite Inorganic materials 0.000 claims description 7
- 229910052905 tridymite Inorganic materials 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 6
- 238000010304 firing Methods 0.000 claims description 6
- 238000003475 lamination Methods 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- 238000002203 pretreatment Methods 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 238000003892 spreading Methods 0.000 claims description 3
- 230000007480 spreading Effects 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000002244 precipitate Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 abstract description 11
- 239000011248 coating agent Substances 0.000 abstract description 8
- 238000001962 electrophoresis Methods 0.000 abstract description 8
- 230000007613 environmental effect Effects 0.000 abstract description 5
- 239000011241 protective layer Substances 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 abstract description 2
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 25
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 20
- 238000001035 drying Methods 0.000 description 18
- 239000000047 product Substances 0.000 description 18
- 239000007788 liquid Substances 0.000 description 16
- 230000007306 turnover Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 7
- 239000002002 slurry Substances 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000012805 post-processing Methods 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 5
- 230000002950 deficient Effects 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 238000006396 nitration reaction Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000001052 transient effect Effects 0.000 description 4
- 230000000007 visual effect Effects 0.000 description 4
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000383 hazardous chemical Substances 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- NRTDAKURTMLAFN-UHFFFAOYSA-N potassium;gold(3+);tetracyanide Chemical compound [K+].[Au+3].N#[C-].N#[C-].N#[C-].N#[C-] NRTDAKURTMLAFN-UHFFFAOYSA-N 0.000 description 3
- OANVFVBYPNXRLD-UHFFFAOYSA-M propyromazine bromide Chemical compound [Br-].C12=CC=CC=C2SC2=CC=CC=C2N1C(=O)C(C)[N+]1(C)CCCC1 OANVFVBYPNXRLD-UHFFFAOYSA-M 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 238000002791 soaking Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- YUWBVKYVJWNVLE-UHFFFAOYSA-N [N].[P] Chemical compound [N].[P] YUWBVKYVJWNVLE-UHFFFAOYSA-N 0.000 description 2
- 229960000583 acetic acid Drugs 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 238000003763 carbonization Methods 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000007771 core particle Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000006052 feed supplement Substances 0.000 description 2
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000013008 thixotropic agent Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 241000208340 Araliaceae Species 0.000 description 1
- 206010003497 Asphyxia Diseases 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- 244000283207 Indigofera tinctoria Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 1
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 1
- 235000011130 ammonium sulphate Nutrition 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004033 diameter control Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- FPAFDBFIGPHWGO-UHFFFAOYSA-N dioxosilane;oxomagnesium;hydrate Chemical compound O.[Mg]=O.[Mg]=O.[Mg]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O FPAFDBFIGPHWGO-UHFFFAOYSA-N 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000004952 furnace firing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 239000012362 glacial acetic acid Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000006263 metalation reaction Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000000472 traumatic effect Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Weting (AREA)
Abstract
The invention relates to a method for manufacturing a bidirectional TVS chip by adopting a printing process, which comprises the steps of silicon wafer pretreatment, double-sided diffusion texturing, glass passivation printing and drawing, metallization, testing and sorting, wherein the double-sided diffusion texturing step adopts a mode of double-sided deposition of a phosphorus source or double-sided printing of a boron source for diffusion, wet texturing or laser texturing is adopted, and a glass passivation process adopts a printing mode for coating a protective layer and a glass pulp, so that the glass passivation process is simplified, and the preparation speed is increased. Compared with the traditional method, the printing process is used for manufacturing the bidirectional TVS chip, and the production process is large-scale, automatic, informationized and less humanized; the bidirectional TVS chip product has low production cost, high quality, high consistency and good market compatibility; the printing process has high efficiency and high precision, replaces the processes of coating, film coating, electrophoresis and the like in the existing process flow, improves the product consistency and reduces the environmental protection and safety risks while realizing the automatic and less-human production.
Description
Technical field
The invention belongs to two-way TVS chip technology fields, make two-way TVS core using printing technology more particularly, to a kind of
The method of piece.
Background technique
TVS (Transient Voltage Suppressor) diode, also known as Transient Suppression Diode, is generally to make
A kind of new and effective circuit brake, it has the response time (subnanosecond grade) being exceedingly fast and quite high surge absoption
Ability, cooperates with components such as resistance, capacitors, the purposes to inhibit protection as high voltage transient.When its both ends are subjected to wink
Between high energy impact events when, the impedance value between both ends can be become Low ESR from high impedance with high speed by TVS, to absorb one
A instantaneous large-current, its both end voltage strangulation one it is scheduled numerically, thus protect subsequent circuit element not by
The impact of high voltage transient spike
TVS is widely used in all kinds of protection electronic circuits, wide market, and development space is larger.
Mainly using 3 kinds of techniques for producing two-way TVS chip in existing industry: knife scrapes technique, electrophoresis process, photoresist glass
Technique, in this three kinds of techniques, the two-way TVS simple process and low cost of knife scraping method but because of mesa edge and passivation glass when welding
The protection of upper No oxided film, scolding tin easily flow on glass, and reliability can reduce, and when application is vulnerable；Electrophoresis process groove wedge angle has
Passivation glass protection, reliability is relatively high, but since platinum production process is more in producing, in addition production is needed using a large amount of
Acetone, there are security risk, relative cost is higher；Photoresist glass method uses 3 layers of passivation protection (SIPOS, glass, titanium dioxide
Silicon), the higher wider, high reliablity using silicon chip resistivity range of backward voltage, but 3 photoetching, production cost are needed in producing
It is higher.
Summary of the invention
In order to solve the above technical problems, the present invention provides a kind of method for making two-way TVS chip using printing technology,
Production capacity is further increased on the basis of raising existing product quality.
The technical solution adopted by the present invention is that: a method of two-way TVS chip, preparation step are made using printing technology
Include:
S1 Double side diffusion making herbs into wool；
The blunt printing drawing of S2 glass；
S3 metallization.
Wherein, the S1 step Double side diffusion making herbs into wool comprising steps of
S1-1 spreads pre-treatment；
S1-2 Double side diffusion；
S1-3 making herbs into wool；
Preferably, the S1-3 step making herbs into wool process is wet-method etching or laser making herbs into wool；
Preferably, the wet-method etching includes the cleaning of first order cleaning solution；The cleaning of first order pure water；Second level cleaning solution is clear
It washes；The cleaning of second level pure water；The cleaning of third level cleaning solution；The cleaning of third level pure water；
Preferably, the laser making herbs into wool includes laser making herbs into wool；It is cleaned after making herbs into wool: after the silicon wafer wool making, being set to HF solution
Soaking and washing carries out spilling water cleaning and dries after the cleaning of HF solution.
Above technical scheme is preferred, and the S1-2 step Double side diffusion is using screen printing technique in the silicon wafer two
Boron diffusion source is printed in face, and the coated silicon wafer of multi-disc is placed in a manner of forward lamination, carries out negative pressure diffusion, and the negative pressure expands
It dissipates for constant temperature diffusion.
Above technical scheme is preferred, and the S1-2 step Double side diffusion is will by carrying phosphorus oxychloride mode with nitrogen
Phosphorus source carries out two-sided phosphorus diffusion after being deposited on silicon wafer two sides.
Wherein, the S2 step glass blunt printing drawing comprising steps of
S2-1, printing protective glue: it is protected when corroding to silicon wafer subsequent trench without erodable section；S2-2, groove are rotten
Erosion fluting: slot treatment is carried out to silicon wafer；S2-3, LPCVD precipitate SiO2: SiO is precipitated by LPCVD technology2, make electrical parameter more
Stablize；S2-4, glass firing: glass powder in the passivation layer is solidified by high temperature, is finally reached the effect of passivation；
Preferably, protective glue is printed in the S2-1 step use screen printing technique.
Above technical scheme is preferred, and the printing protective glue is printed on both sides protective glue；
Preferably, the protective glue is acidproof wax.
Above technical scheme is preferred, and the S2-2 step trench etching fluting includes laser slotting；Acid corrosion；It is sour clear
It washes.
Wherein, S3 step metallization comprising steps of
Nickel plating of S3-1: a nickel is plated in the silicon chip surface；
The sintering of S3-2 nickel: make nickle atom to spreading inside the silicon wafer, nickel layer be combined with each other with silicon layer；
Bis- nickel plating of S3-3: secondary nickel is plated in the silicon chip surface；
S3-4 is gold-plated；It is gold-plated in the silicon chip surface.
Wherein, further include testing, sorting step after the S3 step, specifically include: getting test ready；Laser scribing；Automatic point
Choosing；
Preferably, the test specially needle row multiple spot of getting ready gets test ready.
Wherein, the silicon wafer diameter is 5 inch, and the silicon wafer is sliced using diamond line.
The advantages and positive effects of the present invention are:
1 since two-way TVS chip requires concentration high phosphorous diffusion source, the concentration that printing technology does not reach requirement, so not
Phosphorus source is applied using silk-screen printing technique；Using silk-screen printing technique in silicon wafer two-face printing boron diffusion source, so that silicon wafer liquid source
Coating process be simplified, and the process-cycle is reduced, and is used negative pressure diffusion technique after liquid source coating, is mitigated silicon wafer side
Edge returns source situation, and the diffusion process steps simplify, and improve diffuser efficiency, so that the PN junction of production is uniform, so that silicon wafer
Processing cost reduces, and traditional dry method sanding is substituted using wet-method etching or laser making herbs into wool, so that worm channel shape is made in silicon chip surface
Flannelette increases the roughness of silicon chip surface, conducive to the coating of the blunt technique protective layer of the subsequent glass of silicon wafer, so that protecting in the blunt technique of glass
Adhesive force increases when sheath coats；
2 glass blunt processes reduces oxidation, photoetching, development, gum compared with conventional method, reduces coordinative solvent examination
The use of agent, this programme replaces the hazardous chemicals (such as: acetone, gold potassium cyanide) such as organic and cyanide, so that this technique is more
Safety and environmental protection.
Specific embodiment
Two-way TVS three productions technique: knife scraping method, electrophoresis, light blockage method, technical difficulty, product quality successively increase, but
Whole technical difficulty is still relatively low, and investment is low, upper amount is rapid, and as the market demand increases, a large amount of workshop-based producers enter, and makes
Supply exceed demand for product, this just needs a kind of efficient two-way TVS chip preparing process of high yield, and this programme is related to a kind of use
The method that printing technology makes two-way TVS chip, including silicon wafer pretreatment, Double side diffusion making herbs into wool, the blunt printing drawing of glass, metallization
With the several steps of testing, sorting, specially DW is cleaned after being sliced, is annealed, cleaning, silicon wafer sort, spread pre-treatment, is double after annealing
Face diffusion, diffusion post-processing, making herbs into wool, print glue, trench etching, LPCVD deposition SIPOS, print glass paste, glass firing, LPCVD are heavy
Product SiO2, print glue, removal SiO2With SIPOS, metallization, test, diamant scribing, sort, be packed and stored.Wherein silicon wafer former material
The silicon wafer that material is obtained using 5 inch diamond lines slice, compared with original technique, silicon wafer diameter is changed to 5 inch, identical size by 4 inch
Chip monolithic go out core number and increase to original 1.5 times, single branch chip cost is at low cost, and silicon wafer is changed to DW by being ground originally
Slice saves grinding, cleaning process after silicon wafer cutting, simplifies processing step, improve silicon wafer yield, reduces silicon wafer cost.
One, silicon wafer pre-processes
The silicon wafer obtained by diamond line slice is pre-processed, impurities on surface of silicon chip is cleared up, and removes surface damage
Traumatic part point, specifically includes the following steps:
A slice cleaning: making silicon wafer by cleaning solution, carry out alkali process and nitric acid treatment cleaning silicon chip metallic contaminants from surface,
Wherein sodium hydroxide solution can be used in alkali process, and cleaning silicon chip is stained after annealing in order to prevent.
B annealing: being annealed using automatic sheet-feeding system, liberates manpower, and annealing process is intended to eliminate oxygen donor pair resistance
The influence of rate.
It cleans after C annealing: being corroded using hydrofluoric acid, to remove the oxide layer that annealing rear surface is formed.
Two, Double side diffusion making herbs into wool
According to different type product, when silicon wafer type is p-type two-way TVS chip, two-sided silicon wafer is phosphorus diffusion making herbs into wool；Silicon wafer
When type is N-type two-way TVS chip, silicon wafer is two-sided to spread making herbs into wool for boron.
Since the two-way TVS chip of p-type requires concentration high phosphorous diffusion source, the concentration that printing technology does not reach requirement, so
Silk-screen printing technique is not used to apply phosphorus source, phosphorus diffusion is that phosphorus source is deposited on silicon wafer table by carrying phosphorus oxychloride mode with nitrogen
Phosphorus diffusion is carried out behind face, boron diffusion source is to be coated on silicon wafer in a manner of printing to wait for two sides, by the coated silicon wafer of multi-disc with folded
The mode of piece is placed, and high temperature negative pressure diffusion technique is carried out.Uniform PN junction is made, diffuser efficiency is improved, improves conductive wafer rate, and
In silicon chip surface making herbs into wool, basis is provided for the blunt module of glass, specifically includes the following steps:
The sorting of D silicon wafer: the silicon wafer after cleaning is screened by integrated machine for sorting, to detect the ginseng of appearance and resistivity
Number standard carries out mark and inserts indigo plant, sub-elects the silicon wafer of qualified quality.
E spreads pre-treatment: silicon wafer is placed in 0-15 DEG C of corrosive liquid and corrodes 9-50s, carry out silicon wafer two-sided thinned,
Silicon wafer thickness is changed to 10-20 μm, cleans corrosive liquid after corrosion, the silicon wafer after being thinned is placed in lye
Silicon wafer is put into progress spilling water cleaning in pure water after the completion, removes the lye of silicon chip surface, then is placed in acid solution and carry out acid by reason
Processing also passes through the acid solution of spilling water cleaning removal silicon chip surface, the water and other impurities of drying removal silicon chip surface.
Wherein corrosive liquid is by nitric acid: hydrofluoric acid: glacial acetic acid: pure water 12: 6: 6: 1 mixes, which can be fine
To silicon wafer carry out corrosion thinning.
F Double side diffusion:
The two-way TVS chip double-side diffusion of p-type: when diffusion furnace furnace temperature reaches 1000 DEG C, the silicon wafer to phosphorus diffusion is pushed away
To flat-temperature zone, is carried after phosphorus source is deposited on silicon chip surface by phosphorus oxychloride mode when temperature rises to 1200 DEG C with nitrogen and carry out phosphorus expansion
It comes out of the stove after dissipating 2~5 hours；
The two-way TVS chip double-side diffusion of N-type: boron diffusion is using silk-screen printing technique to the double of the silicon wafer after diffusion pre-treatment
Boron diffusion source is printed in face, often prints and is both needed to silicon wafer after one side and is placed in baking oven, dries to diffusion source, drying time 1-
30min, drying temperature are 150~180 DEG C, carry out another side printing boron source, drying after the completion of baking again, silicon wafer single side is sprayed
Upper Al2O3 powder or silicon powder, by silicon wafer, opposite lamination fills boat two-by-two, i.e., carries out lamination for silicon wafer boron source face is opposite with boron source face,
It is put into silicon carbide boat after lamination, and places baffle in carbonization boat front-rear position, silicon wafer is compressed；It will be mounted in the silicon wafer of carbonization boat
Negative pressure diffusion is carried out in diffusion furnace, generally 10-101Kpa spreads furnace temperature by 650 DEG C and rises to 1300 DEG C of progress constant temperature expansions
It dissipates, constant temperature time 10-20h makes silicon chip surface form uniform PN junction.
G diffusion post-processing: if making herbs into wool uses wet-method etching, post-processing is spread are as follows:
Silicon wafer after diffusion is placed in hydrofluoric acid and is diffused post-processing, silicon wafer is washed by water after separating and steamed using high-temperature water
Gas and hydrofluoric acid mixture clean the surface remove silicon chip surface phosphorus, Pyrex after diffusion.
If making herbs into wool uses laser making herbs into wool, post-processing is spread are as follows:
Silicon wafer after diffusion is placed in glass erosion liquid and is diffused post-processing, soaking time 0.5-4h；It is ultrasonic clear
Wash 5-30min；One time spilling water cleans 5-30min；Nitric acid cleans 5-30min；The cleaning of level Four spilling water is 5-30min；Dryer
Drying.
Glass erosion liquid is that example is 6-10 by volume for hydrofluoric acid ammonium, oxalic acid, ammonium sulfate, glycerol, barium sulfate and hot pure water:
The solution that the ratio of 8-15:20-30:4-15:10-22:110-120 is mixed to form.
H making herbs into wool:
Wet-method etching: being respectively configured level-one cleaning solution, second level cleaning solution and three-level cleaning solution, and by treated, silicon wafer exists
3-10min is placed in 50-70 DEG C of level-one cleaning solution, bath cleaning 10-20min moves again to 70-90 DEG C of second level cleaning solution
Middle placement 20-30min, bath cleaning 10-20min, moves again in third cleaning solution and places 3-10min, bath cleaning 10-
20min tests silicon chip surface roughness after rinsing well.
Wherein level-one cleaning solution is that the potassium hydroxide solution that hydrogen peroxide, pure water and mass fraction are 30% is according to volume ratio
The solution that 6~10:110~120:1~8 ratio is mixed to form；
Second level cleaning solution be mass fraction be 10~30% potassium hydroxide solution, flocking additive and pure water according to volume
Than the solution being mixed to form for 0.35~0.42:0.04~0.09:5~10 ratio；
It according to volume ratio is 10~15:30~40:60~80 ratio that three-level cleaning solution, which is by hydrofluoric acid, hydrochloric acid and pure water,
The solution being mixed to form.
Laser making herbs into wool: being scanned silicon chip surface using laser, the spot diameter control that laser device laser light beam is formed
For system at 10-80 μm, laser beam successively carries out multiple transversal scanning in a longitudinal direction, is formed together in silicon chip surface
Track is scanned, silicon wafer two sides all carries out laser scanning；It is clear that two-stage spilling water is carried out using acid solution soaking and washing, after acid solution cleaning
It washes and dries, the acid solution applied here is hydrofluoric acid solution cleaning；The cleaning of two-stage spilling water；Drying.
When laser scanning, laser used is infrared laser, is also possible to other lasers, and infrared laser swashs
Light frequency is 0.1MHz-1MHz, power 10-50W, and the scanning speed of laser is 3-40m/s so that silicon chip surface roughness by
0.3m is improved to 0.5-1.5 μm；And laser scanning is not by environmental restrictions.
Compared with traditional handicraft, this programme prints boron diffusion source on silicon wafer two sides using silk-screen printing technique respectively, so that
The coating process of silicon wafer liquid source is simplified, and the process-cycle is reduced；Using a negative pressure diffusion after liquid source coating
Technique mitigates silicon chip edge and returns source situation, and the diffusion process steps simplify, and improve diffuser efficiency；Silicon wafer liquid source is primary
Diffusion enables to the PN junction of production uniform, so that the processing cost of silicon wafer reduces；Traditional dry method is substituted using wet-method etching
Sanding improves the adhesive force of subsequent printing wax and silicon chip surface so that worm channel shape flannelette is made in silicon chip surface.
Three, the blunt printing drawing of glass
Oxide layer plays the role of shielding in original technique, for electrophoresis process, have the electrode surface electrophoresis of oxide layer not on
Glass, do not aoxidize in the groove of layer region can glass on electrophoresis, play the role of passivation protection diffusion junction depth after firing；In we
In case, printed glass replaces electrophoresis process after corrosion, and directly printed glass, electrode surface do not need oxide layer in the trench, therefore
The step of being compared with traditional handicraft, dispensing oxidation, photoetching, development gum, thus reduce the use of coordinative solvent reagent, this
Scheme replaces the hazardous chemicals (such as: acetone, gold potassium cyanide) such as organic and cyanide, so that the safer environmental protection of this technique；It adopts
With the groove production method of first laser slotting trench etching again, the time of groove production is greatly shortened, improves two-way TVS production effect
Rate.Specifically includes the following steps:
I print protective glue: printing protective glue include upper piece, mark face identification, overturning silicon wafer, silicon wafer perfecting protective glue and
Several steps are toasted, silicon wafer is two-sided to print protective glue by silk-screen printing technique, and it prepares for trench etching below, makes figure,
Not corrosion area is protected, avoids eroding the place that corrode when trench etching.
Wherein protective glue is acidproof wax, and the main component of acidproof wax includes: butoxy ethanol, talcum powder, does not contain stone
Cotton fiber, acetic acid -2- (2- ethoxy ethoxy) ethyl ester.
Specific steps are as follows:
Upper piece, upper piece purpose is while to carry out appearance detection in order to which product is transmitted to printing place from basket, is preferably made
Carry out upper piece with manipulator.Upper piece place is equipped with visual examination station, rejects bad, damaged silicon wafer, and visual examination is complete by pure road
It is changed to extra quality road.Buffered station is had enough to meet the need in upper piece place's addition, guarantees that not fracture, preferably buffered station have 50-100 piece when silicon wafer basket has enough to meet the need
The buffer capacity of silicon wafer.
The identification of mark face, is identified using mark face of the picture system to silicon wafer.
Silicon wafer is overturn, realizes the arrangement turn over function of silicon wafer, 180 degree is overturn, mark is placed up.
Silicon wafer perfecting protective glue is prepared for trench etching below, and avoiding eroding when trench etching corrode
Place, positioning device is equipped with before printing machine platform, guarantees that silicon wafer is corresponding with template.Specifically include: reverse side print protective glue, drying,
Turn-over, front print protective glue, drying.Wherein the step of positive and negative print protective glue is equal are as follows: 1, two panels silicon wafer is placed on by suction piece device
On slide holder, position of silicon wafer is adjusted in alignment of taking pictures；2, ink-retruning blade feed back presses downwards forward to initial position, scraper is printed
Slurry is pushed, printing end position is reached, scraper lifts；3, product after printing is gone at outflow；4, it will be produced by suction piece device
Product are placed on conveyer belt.It requires to continue feed supplement in printing process in entire printing process；Before print protective glue in transmit process
Increase automatic collecting device, discharge to form interlocking with front end, front end stops discharging after material stock is full.
Baking step is to achieve the purpose that toast printing slurry by high temperature chain examination furnace by product, according to the technological requirements, is printed
The difference of the parameters such as the furnace temperature of material and chain examination furnace of slurry, silicon wafer is also different in the chain examination baking oven roasting time, and standard is
Product just achievees the effect that drying when going out chain examination furnace, it is high temperature resistant material that chain, which tries conveyer belt in furnace,.
Turn-over carries out 180 degree overturning to the silicon wafer after drying.Settable visual examination station at turn-over operation is examined
The fragment arrisdefect of silicon wafer etc. is bad, and rejects defective products.Turnover buffered station can be also added at turn-over operation, in silicon wafer basket turnover
Guarantee not fracture, preferably buffer capacity of the buffered station with (50~100) piece silicon wafer.It is corresponding that buffered station is had enough to meet the need with upper piece place.
Basket is filled, the silicon wafer by perfecting protective glue and after drying carries out dress basket operation, is convenient for subsequent turnover.Every basket is pressed
Certain quantity fills basket, usually 100/basket.
Baking, in an oven toasts the silicon wafer basket for installing silicon wafer, in order to the further guarantor of drying printing
Protect glue.
J laser slotting: specific steps are as follows: mark face fluting, turn-over, non-mark face fluting, the figure formed according to photoresist
Shape is slotted at channel figure with laser, it is therefore an objective to be eliminated burrs on edges caused by print glue, while can be accelerated subsequent ditch
Groove corrosion rate；Specially laser is scanned in silicon chip surface, and the exposed locations for not printing protective glue to silicon wafer carry out calcination, is reached
The purpose of fluting.
K trench etching: by corrosion, the groove shape and depth removed photoresist with cleaning operation corrosion demand；Wherein corrosion is adopted
Corroded with nitration mixture, nitration mixture is nitric acid: hydrofluoric acid: acetic acid is mixed for 6:4:1, including acid corrosion and acid cleaning, obtains groove
The nitration mixture that silicon chip surface after trench etching carries is rinsed well after shape；Again by (5%~10% KOH solution alkali cleaning
Process removes photoresist, removes the soda acid cleaning agent and impurity of silicon chip surface, miscellaneous liquid by cleaning step.
L LPCVD deposits SIPOS: promoting channel bottom to grow polycrystalline passivation layer by LPCVD technology.
M prints glass paste: with silk-screen printing technique, printed glass starches passivation layer on silicon wafer, and printing process includes printing twice
Brush is both needed to drying silicon wafer every time after printing.
Wherein glass paste is the slurry for being proportionally mixed to form cellulose, thixotropic agent and glass powder.
The cellulose of 2~4g, 30~60min of heating stirring are added in the butyl carbitol of 100ml；Next addition 0.5~
1.5% thixotropic agent, 30~60min of heating stirring；Finally 30~60min of glass powder uniform stirring of 150~220g of addition is
Glass paste is made.
Printed glass slurry passivation layer include upper piece, one-step print, drying, secondary printing, drying, dress the several steps of basket, tool
Body is as follows:
Upper piece use manipulator upper piece, upper piece place also be provided with visual examination station and turnover buffered station.
Before the print station of one-step print be equipped with positioning device, for transmission come silicon wafer position, guarantee silicon wafer with
Template is corresponding.Once, the purpose of secondary printing is printed glass slurry passivation layer, is specifically included:
Two panels silicon wafer is placed on slide holder by a by suction piece device, alignment of taking pictures, and adjusts position of silicon wafer 1 under web plate
~3mm, i.e. version spacing are 1~3mm, and ensure silicon wafer horizontal in suitable printing position；
B ink-retruning blade feed back is contacted to initial position, the downward pressure testing of scraper (preferred scraper moves down 1~3mm) is printed
Web plate upper surface pushes forward slurry, and after reaching printing end position, scraper is lifted；Wherein preferably print each parameter area
As follows: the power that printing equipment gives scraper is (30~120) N, and print speed printing speed is (50~300) mm/S, scraper and silicon wafer plane
Angle be 40 °~90 °, the material hardness of scraper itself is between (40~80) HRC；
C goes to product after printing at outflow, and product is placed on conveyer belt by suction piece device.
It needs to continue feed supplement during one-step print and secondary printing；Increase automatic material receiving dress before printing in transmit process
It sets, discharges to form interlocking with front end, front end stops discharging after material stock is full.
The purpose of drying is that the passivation layer of printing is dried, and product is dried by high temperature chain examination furnace, root
Required according to technique, the difference of the parameters such as furnace temperature of the material of printing passivation layer and chain examination furnace, silicon wafer chain examination baking oven it is roasting when
Between it is also different, standard is that product just achievees the effect that drying when going out chain examination furnace, and it is high temperature resistant material that chain, which tries conveyer belt in furnace,.
Dress basket: the silicon wafer after drying is transferred in silicon wafer basket, in order to subsequent turnover, preferably 100/basket.
The firing of N glass: the silicon wafer for printing glass passivation layer is entered into firing furnace firing, glass is made to be changed into glass by powdered form
Glass state, and remove the organic matter in glass paste.
O LPCVD deposits SiO2: SiO is precipitated by LPCVD technology2, oxidation ring is made at glass passivation layer edge.
P prints wax: by screen printing technique printed on both sides photoresist, as corrosion-resistant protection wax, process is the same as step J.
Q removes SiO2And SIPOS: SiO is removed with hydrofluoric acid and nitration mixture respectively2And SIPOS, remove electrode surface oxide layer
(SiO2) and SIPOS and retain the oxide layer (SiO on passivation glass2) and SIPOS.
Four, it metallizes
Plating nickel gold is carried out in silicon chip surface, progress nickel plating twice is once gold-plated altogether, and plating nickel gold makes silicon wafer electrode surface plating metal
Layer is conducive to rear road welding.
R first passes through chemical method and plates a nickel in silicon chip surface, carries out nisiloy sintering using chain-type sintering furnace after nickel plating, burns
Secondary nickel chemically is plated in the sintered silicon chip surface of a nickel again after knot, followed in turn by chemical method after secondary nickel plating
Silicon chip surface it is gold-plated (silver-plated).
10~30min of silicon wafer is impregnated with ammonium fluoride etchant, removes the oxide layer of silicon chip surface, then after removing oxide layer will be removed
Silicon wafer carry out ultrasonic overflow cleaning in the sink；Silicon wafer cleans surface with 5% hydrofluoric acid solution, then clear with pure water
Wash off the hydrofluoric acid on surface；Silicon wafer is impregnated with activating solution, makes silicon chip surface atom activation, clear water cleans after activation；Silicon wafer is soaked
It steeps and carries out nickel plating in 60~100 DEG C of temperature, 7~10 nickel-plating liquid of pH value, shaking the gaily decorated basket keeps its reaction uniform；At 500~650 DEG C
Under silicon wafer is sintered, make nickle atom to spreading inside silicon, nickel layer be combined with each other with silicon layer；Silicon wafer is carried out clearly with nitric acid
It washes, removal surface is by high-temperature oxydation part, and then pure water cleans；Silicon wafer is impregnated with activating solution, makes silicon chip surface atom activation, so
Pure water cleans afterwards；Secondary nickel plating is carried out, silicon wafer is soaked in 60~100 DEG C of temperature, nickel plating is carried out in alkaline nickel-plating liquid, shakes flower
Basket makes its reaction uniformly, and then pure water cleans；With salt acid soak silicon wafer, cleaning neutralizes surface alkalinty residual, then clear with pure water
It washes；Silicon wafer is soaked in 60~100 DEG C of temperature, carried out in acid silver plating liquid it is gold-plated, shake the gaily decorated basket make its reaction uniformly, thus complete
At surface metalation.
Five, testing, sorting
Two-way TVS chip is measured by testing, sorting and prepares yields, and defective products is rejected, high-quality chip is filtered out.
S test: the electrically bad core of test carries out getting label ready, rejects electrical defective products, wherein being arranged or being visited using probe needle
The test of needle dials can once test 50~1000 chips, and substitution tradition, which is taken a sample test, gets test ready with single needle.Product is uploaded into survey
Testing needle is lined up needle row or needle plate, contacts with silicon wafer, test electrical performance, carried out with the testing standard set in advance by test-run a machine
It compares, bad core particles is stamped into ink dot
T diamant scribing: chip will be cleaved into the size of needs with high speed diamant cutting mode.
U sliver: silicon wafer passes to sliver region along belt, and automatic sliver stick respectively rolls one time along vertical and horizontal direction, makes chip point
From.
V sorting: core particles pass to sorting panel region along belt, using CCD technology automatic identification tailing and defective products into
Row removal, and non-defective unit is collected.
Since two-way TVS chip requires concentration high phosphorous diffusion source, the concentration that printing technology does not reach requirement, so not adopting
Phosphorus source is applied with silk-screen printing technique；Using silk-screen printing technique in silicon wafer two-face printing boron diffusion source, so that silicon wafer liquid source
Coating process is simplified, and the process-cycle is reduced, and is used negative pressure diffusion technique after liquid source coating, is mitigated silicon chip edge
Source situation is returned, and the diffusion process steps simplify, and improve diffuser efficiency, so that the PN junction of production is uniform, so that silicon wafer adds
Work cost reduces, and traditional dry method sanding is substituted using wet-method etching or laser making herbs into wool, so that worm channel shape suede is made in silicon chip surface
Face increases the roughness of silicon chip surface, conducive to the coating of the blunt technique protective layer of the subsequent glass of silicon wafer, so that protecting in the blunt technique of glass
Adhesive force increases when layer coating；Glass blunt process reduces oxidation, photoetching, development, gum compared with conventional method, reduces
The use of coordinative solvent reagent, this programme replace the hazardous chemicals (such as: acetone, gold potassium cyanide) such as organic and cyanide, make
Obtain the safer environmental protection of this technique.
As used some vocabulary to censure specific components in the specification and claims.Those skilled in the art answer
It is understood that different manufacturers may call the same component with different nouns.Present specification and claims not with
The difference of title is as the mode for distinguishing component, but with the difference of component functionally as the criterion of differentiation.Logical
The "comprising" of piece specification and claim mentioned in is an open language, therefore should be construed to " include but do not limit
In "." substantially " refer within the acceptable error range, those skilled in the art can within a certain error range solve described in
Technical problem basically reaches the technical effect.Specification subsequent descriptions are to implement the better embodiment of the application, so described
Description is not intended to limit the scope of the present application still for the purpose of the rule for illustrating the application.The protection scope of the application
As defined by the appended claims.
It should also be noted that, the terms "include", "comprise" or its any other variant are intended to nonexcludability
Include, so that commodity or system including a series of elements not only include those elements, but also including not clear
The other element listed, or further include for this commodity or the intrinsic element of system.In the feelings not limited more
Under condition, the element that is limited by sentence "including a ...", it is not excluded that in the commodity or system for including the element also
There are other identical elements.
One embodiment of the present invention has been described in detail above, but the content is only preferable implementation of the invention
Example, should not be considered as limiting the scope of the invention.It is all according to all the changes and improvements made by the present patent application range
Deng should still be within the scope of the patent of the present invention.
Claims (10)
1. a kind of method for making two-way TVS chip using printing technology, it is characterised in that: preparation step includes:
S1 Double side diffusion making herbs into wool；
The blunt printing drawing of S2 glass；
S3 metallization.
2. a kind of method for making two-way TVS chip using printing technology according to claim 1, it is characterised in that: institute
State S1 step Double side diffusion making herbs into wool comprising steps of
S1-1 spreads pre-treatment；
S1-2 Double side diffusion；
S1-3 making herbs into wool；
Preferably, the S1-3 step making herbs into wool process is wet-method etching or laser making herbs into wool；
Preferably, the wet-method etching includes the cleaning of first order cleaning solution；The cleaning of first order pure water；The cleaning of second level cleaning solution；
The cleaning of second level pure water；The cleaning of third level cleaning solution；The cleaning of third level pure water；
Preferably, the laser making herbs into wool includes laser making herbs into wool；It is cleaned after making herbs into wool: after the silicon wafer wool making, being set to HF solution and impregnate
Cleaning carries out spilling water cleaning and dries after the cleaning of HF solution.
3. a kind of method for making two-way TVS chip using printing technology according to claim 2, it is characterised in that: institute
Stating S1-2 step Double side diffusion is using screen printing technique in the silicon wafer two-face printing boron diffusion source, and multi-disc is coated
Silicon wafer is placed in a manner of forward lamination, carries out negative pressure diffusion, and the negative pressure is diffused as constant temperature diffusion.
4. a kind of method for making two-way TVS chip using printing technology according to claim 2, it is characterised in that: institute
State S1-2 step Double side diffusion be by with nitrogen carry phosphorus oxychloride mode phosphorus source is deposited on behind silicon wafer two sides carry out it is two-sided
Phosphorus diffusion.
5. a kind of method using printing technology production FRGPP chip according to claim 1, it is characterised in that: described
S2 step glass blunt printing drawing comprising steps of
S2-1, printing protective glue: it is protected when corroding to silicon wafer subsequent trench without erodable section；S2-2, trench etching are opened
Slot: slot treatment is carried out to silicon wafer；S2-3, LPCVD precipitate SiO2: SiO is precipitated by LPCVD technology2, keep electrical parameter more stable；
S2-4, glass firing: glass powder in the passivation layer is solidified by high temperature, is finally reached the effect of passivation；
Preferably, protective glue is printed in the S2-1 step use screen printing technique.
6. a kind of method using printing technology production FRGPP chip according to claim 5, it is characterised in that: described
Printing protective glue is printed on both sides protective glue；
Preferably, the protective glue is acidproof wax.
7. a kind of method using printing technology production FRGPP chip according to claim 5, it is characterised in that: described
S2-2 step trench etching fluting includes laser slotting；Acid corrosion；Acid cleaning.
8. a kind of method using printing technology production FRGPP chip according to claim 1, it is characterised in that: described
S3 step metallization comprising steps of
Nickel plating of S3-1: a nickel is plated in the silicon chip surface；
The sintering of S3-2 nickel: make nickle atom to spreading inside the silicon wafer, nickel layer be combined with each other with silicon layer；
Bis- nickel plating of S3-3: secondary nickel is plated in the silicon chip surface；
S3-4 is gold-plated；It is gold-plated in the silicon chip surface.
9. a kind of method using printing technology production FRGPP chip according to claim 1, it is characterised in that: described
Further include testing, sorting step after S3 step, specifically include: getting test ready；Laser scribing；Automatic sorting；
Preferably, the test specially needle row multiple spot of getting ready gets test ready.
10. a kind of method using printing technology production FRGPP chip according to claim 1, it is characterised in that: described
Silicon wafer diameter is 5 inch, and the silicon wafer is sliced using diamond line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711057481.XA CN109755111B (en) | 2017-11-01 | 2017-11-01 | Method for manufacturing bidirectional TVS chip by adopting printing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711057481.XA CN109755111B (en) | 2017-11-01 | 2017-11-01 | Method for manufacturing bidirectional TVS chip by adopting printing process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109755111A true CN109755111A (en) | 2019-05-14 |
| CN109755111B CN109755111B (en) | 2021-04-20 |
Family
ID=66397780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711057481.XA Active CN109755111B (en) | 2017-11-01 | 2017-11-01 | Method for manufacturing bidirectional TVS chip by adopting printing process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109755111B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112582480A (en) * | 2020-12-15 | 2021-03-30 | 扬州杰利半导体有限公司 | PN junction passivation process for low-medium voltage table top TVS product |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040017620A1 (en) * | 2002-07-24 | 2004-01-29 | Shinji Kaneko | Optical unit provided with an actuator |
| CN1767149A (en) * | 2004-10-28 | 2006-05-03 | 京瓷株式会社 | Heater, wafer heating apparatus and method for manufacturing heater |
| US20060131605A1 (en) * | 2004-12-22 | 2006-06-22 | Cogan Adrian I | Low capacitance two-terminal barrier controlled TVS diodes |
| CN201383498Y (en) * | 2009-03-03 | 2010-01-13 | 百圳君耀电子（深圳）有限公司 | Semiconductor diode chip |
| CN102646586A (en) * | 2012-04-18 | 2012-08-22 | 杭州杭鑫电子工业有限公司 | Method for manufacturing silicon diode by utilizing double diffusion of P+ and N+ type impurities |
| CN103456798A (en) * | 2012-06-05 | 2013-12-18 | 上海华虹Nec电子有限公司 | Tvs device and manufacturing method thereof |
| CN105355654A (en) * | 2015-10-13 | 2016-02-24 | 上海瞬雷电子科技有限公司 | Low-voltage transient-suppression diode chip with low electric leakage and high reliability and production method |
| CN105405896A (en) * | 2015-12-30 | 2016-03-16 | 天津天物金佰微电子有限公司 | Glass passivation high-voltage bidirectional trigger diode and preparation process |
| CN105428224A (en) * | 2015-12-03 | 2016-03-23 | 上海大族新能源科技有限公司 | Boron doping method for silicon wafer |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709276B (en) * | 2012-06-16 | 2014-11-12 | 中国振华集团永光电子有限公司 | Low-capacity metal packaged silicon transient voltage suppressor and manufacturing method thereof |
| CN103606521B (en) * | 2013-08-05 | 2016-06-08 | 南通康比电子有限公司 | The processing technology of transient voltage suppression diode chip |
| CN105304753A (en) * | 2015-09-25 | 2016-02-03 | 中国电子科技集团公司第四十八研究所 | N-type cell boron diffusion technology |
-
2017
- 2017-11-01 CN CN201711057481.XA patent/CN109755111B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040017620A1 (en) * | 2002-07-24 | 2004-01-29 | Shinji Kaneko | Optical unit provided with an actuator |
| CN1767149A (en) * | 2004-10-28 | 2006-05-03 | 京瓷株式会社 | Heater, wafer heating apparatus and method for manufacturing heater |
| US20060131605A1 (en) * | 2004-12-22 | 2006-06-22 | Cogan Adrian I | Low capacitance two-terminal barrier controlled TVS diodes |
| CN201383498Y (en) * | 2009-03-03 | 2010-01-13 | 百圳君耀电子（深圳）有限公司 | Semiconductor diode chip |
| CN102646586A (en) * | 2012-04-18 | 2012-08-22 | 杭州杭鑫电子工业有限公司 | Method for manufacturing silicon diode by utilizing double diffusion of P+ and N+ type impurities |
| CN103456798A (en) * | 2012-06-05 | 2013-12-18 | 上海华虹Nec电子有限公司 | Tvs device and manufacturing method thereof |
| CN105355654A (en) * | 2015-10-13 | 2016-02-24 | 上海瞬雷电子科技有限公司 | Low-voltage transient-suppression diode chip with low electric leakage and high reliability and production method |
| CN105428224A (en) * | 2015-12-03 | 2016-03-23 | 上海大族新能源科技有限公司 | Boron doping method for silicon wafer |
| CN105405896A (en) * | 2015-12-30 | 2016-03-16 | 天津天物金佰微电子有限公司 | Glass passivation high-voltage bidirectional trigger diode and preparation process |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112582480A (en) * | 2020-12-15 | 2021-03-30 | 扬州杰利半导体有限公司 | PN junction passivation process for low-medium voltage table top TVS product |
| CN112582480B (en) * | 2020-12-15 | 2024-01-26 | 扬州杰利半导体有限公司 | PN junction passivation technology of low-medium voltage mesa TVS product |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109755111B (en) | 2021-04-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109309001A (en) | Method for manufacturing GPP chip by adopting printing process | |
| CN109755116A (en) | Method for manufacturing unidirectional TVS chip by adopting printing process | |
| CN105514222B (en) | Solar cell acid etching reworking method and chain equipment used by same | |
| CN100505334C (en) | A reworking method on degraded products after the printing of crystal silicon solar battery | |
| CN102437234A (en) | Method for processing defective products produced by reworking incapability of printed solar cell plates | |
| CN104009122B (en) | The do over again processing method of silicon chip of a kind of serigraphy | |
| CN107331734B (en) | It does over again after a kind of cell piece PECVD plated films the processing method of piece | |
| CN106513897A (en) | Machining method for soldering micro-strip boards by using printing solder paste | |
| CN110534616A (en) | The preparation process of crystal silicon battery fragment | |
| CN103789751A (en) | Method for cleaning ITO (Indium-Tin Oxide) surface before chemically plating nickel and gold | |
| CN109755111A (en) | Method for manufacturing bidirectional TVS chip by adopting printing process | |
| CN103606595B (en) | The recycling of the rear defective Monocrystalline silicon cell piece of sintering and grid line recovery method thereof | |
| CN104993014B (en) | Individual remaking method of diffused defective sheets | |
| CN101872808A (en) | Manufacturing method of selective emitter of crystalline silicon solar cell | |
| CN105449036B (en) | Reworking treatment method for poor screen printing sheet | |
| EP1927139B1 (en) | Method for processing of solar cells having laser-written trench contacts | |
| DE202010017906U1 (en) | Solar cell and solar module | |
| CN102062733B (en) | Method for detecting surface residues of solar silicon wafer after cleaning | |
| CN105185873B (en) | Solar battery sheet production technology | |
| CN109755117A (en) | Method for manufacturing FRGPP chip by adopting printing process | |
| CN110447109A (en) | The method of metal electrode is formed simultaneously on the silicon area of opposite polarity | |
| CN109309142A (en) | Liquid source diffusion process before silicon wafer glass passivation | |
| CN108746042B (en) | Cleaning method for single and polycrystalline silicon wafers cut by diamond wire saw | |
| CN109755352A (en) | A kind of silk-screen printing bad surface treatment method and reworking method | |
| CN102496662B (en) | Treatment method for unqualified semi-finished products of solar cells |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 300380 2nd floor, block a, No.12 Haitai East Road, Huayuan Industrial Zone, Xiqing District, Tianjin Patentee after: TCL Huanxin Semiconductor (Tianjin) Co.,Ltd. Address before: 300380 2nd floor, block a, No.12 Haitai East Road, Huayuan Industrial Zone, Xiqing District, Tianjin Patentee before: TIANJIN HUANXIN TECHNOLOGY & DEVELOPMENT Co.,Ltd. |