CN103606523A - GPP diode chip production process - Google Patents
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- CN103606523A CN103606523A CN201310545387.4A CN201310545387A CN103606523A CN 103606523 A CN103606523 A CN 103606523A CN 201310545387 A CN201310545387 A CN 201310545387A CN 103606523 A CN103606523 A CN 103606523A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- GVVPGTZRZFNKDS-JXMROGBWSA-N geranyl diphosphate Chemical compound CC(C)=CCC\C(C)=C\CO[P@](O)(=O)OP(O)(O)=O GVVPGTZRZFNKDS-JXMROGBWSA-N 0.000 title claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 59
- 239000010703 silicon Substances 0.000 claims abstract description 59
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 57
- 238000004140 cleaning Methods 0.000 claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 16
- 238000000206 photolithography Methods 0.000 claims abstract description 11
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 8
- 239000011574 phosphorus Substances 0.000 claims abstract description 8
- 238000005516 engineering process Methods 0.000 claims abstract description 7
- 229910052796 boron Inorganic materials 0.000 claims abstract description 5
- 238000000926 separation method Methods 0.000 claims abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 4
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 4
- 235000012431 wafers Nutrition 0.000 claims description 59
- 238000005488 sandblasting Methods 0.000 claims description 21
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 6
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000012046 mixed solvent Substances 0.000 claims description 3
- 125000004437 phosphorous atom Chemical group 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 239000004576 sand Substances 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 8
- 238000007664 blowing Methods 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
GPP二极管芯片生产工艺流程，涉及二极管芯片制造技术领域，在整个生产的过程中一定要遵循：清洗硅片—喷磷—一次分离—单面吹砂—涂硼—硅片扩散—二次分离—双面吹砂—光刻、刻蚀—清洗烘干—表面金属化—完成晶片的整个过程，特别对于光刻步骤需要将清洗完成后的硅片涂布光致抗蚀剂然后套准掩模板并曝光，然后用显影液溶解未感光的光致抗蚀剂层、用腐蚀液溶解掉无光致抗蚀剂保护的二氧化硅层，最后去除已感光的光致抗蚀剂层。本发明在整个过程中进过反复的分离、清洗和吹砂能够有效提高生产效率，降低生产成本，而且自主创新的扩散工艺能够提高产品质量，于提高工作效率。The production process of GPP diode chips involves the field of diode chip manufacturing technology. During the entire production process, it must be followed: cleaning silicon wafers—phosphorus spraying—primary separation—one-side sand blasting—boron coating—silicon wafer diffusion—secondary separation— Double-sided sand blasting—photolithography, etching—cleaning and drying—surface metallization—complete the entire process of the wafer, especially for the photolithography step, it is necessary to coat the cleaned silicon wafer with photoresist and then register it with the mask and exposure, and then dissolve the unphotosensitive photoresist layer with a developer, dissolve the silicon dioxide layer without photoresist protection with an etching solution, and finally remove the photosensitive photoresist layer. The present invention can effectively improve production efficiency and reduce production cost through repeated separation, cleaning and sand blowing in the whole process, and the self-innovated diffusion process can improve product quality and improve work efficiency.
Description
技术领域：Technical field:
本发明涉及二极管芯片制造技术领域，具体涉及GPP二极管芯片生产工艺流程。The invention relates to the technical field of diode chip manufacturing, in particular to a GPP diode chip production process flow.
背景技术：Background technique:
GPP芯片主要用于SMD封装、桥堆和高档1N400系列整流管，其中SMD器件是滇西信息制造业的主流技术，而国家也是对SMD进行重点支持和鼓励，二极管应用领域的广泛性和不可替代性决定这个行业前景的广阔性，目前GPP被广泛应用于整流桥堆，比普通STD具有更高的可靠性和稳定性，但是目前在国内一些比较先进的技术都被大型国有企业掌控，在普通的生产企业中所采用的技术比较简单，而且生产成本高，生产效率较低。GPP chips are mainly used in SMD packages, bridge stacks and high-end 1N400 series rectifiers. Among them, SMD devices are the mainstream technology in the information manufacturing industry in western Yunnan, and the country also provides key support and encouragement for SMD. Diodes are widely used and irreplaceable. The nature determines the broad prospect of this industry. At present, GPP is widely used in rectifier bridge stacks, which has higher reliability and stability than ordinary STD. However, some relatively advanced technologies in China are controlled by large state-owned enterprises. The technology adopted in the production enterprises is relatively simple, and the production cost is high, and the production efficiency is low.
发明内容：Invention content:
本发明所要解决的技术问题在于提供一种能够有效提高生产效率，降低生产成本，提高产品质量增加二极管芯片稳定性的GPP二极管芯片生产工艺流程。The technical problem to be solved by the present invention is to provide a GPP diode chip production process that can effectively improve production efficiency, reduce production cost, improve product quality and increase the stability of the diode chip.
本发明所要解决的技术问题采用以下的技术方案来实现：Technical problem to be solved by the present invention adopts following technical scheme to realize:
GPP二极管芯片生产工艺流程主要包括以下技术步骤：The production process of GPP diode chip mainly includes the following technical steps:
（1）选取质量优异的硅片对硅片进行清洗，将硅片放置在清洗机上对其进行物理清洗，在清洗完成后将其取出待用；(1) Select high-quality silicon wafers to clean the silicon wafers, place the silicon wafers on a cleaning machine for physical cleaning, and take them out for use after cleaning;
（2）在硅片清洗完成后使用机器对其进行帖磷和附磷操作；(2) After the silicon wafer is cleaned, use a machine to apply phosphorus and phosphorus to it;
（3）操作完成后采用激光技术对硅片进行分离；(3) After the operation is completed, the silicon wafer is separated by laser technology;
（4）分离完成后对已经分离过的硅片进行单面吹砂，将其放置在喷砂机中对硅片的单面进行喷砂，喷砂完成后进行清洗然后待用；(4) After the separation is completed, perform sandblasting on one side of the separated silicon wafer, place it in a sandblasting machine to sandblast one side of the silicon wafer, clean it after sandblasting and then use it;
（5）将单面吹砂后的硅片进行喷硼操作，在喷砂面涂覆一层溶有三氧化二硼和硝酸铝的混合溶剂；(5) Perform boron spraying operation on the silicon wafer after single-sided sand blasting, and coat a layer of mixed solvent dissolved in boron trioxide and aluminum nitrate on the sand blasting surface;
（6）将硅片放置在经过1220℃高温设备中2小时左右，使磷原子扩散到硅片内部；(6) Place the silicon wafer in a high-temperature equipment at 1220°C for about 2 hours to diffuse phosphorus atoms into the silicon wafer;
（7）将扩散后的硅片放置在氢氟酸中数天后使其自动进行硅片分离；(7) Place the diffused silicon wafer in hydrofluoric acid for several days to automatically separate the silicon wafer;
（8）将分离后的硅片放置在喷砂机中，对分离后的硅片的两面继续进行吹砂，喷砂完成后进行清洗待用；(8) Place the separated silicon wafer in the sandblasting machine, continue sandblasting on both sides of the separated silicon wafer, and clean it for use after sandblasting is completed;
（9）将清洗完成后的硅片涂布光致抗蚀剂然后套准掩模板并曝光，然后用显影液溶解未感光的光致抗蚀剂层、用腐蚀液溶解掉无光致抗蚀剂保护的二氧化硅层，最后去除已感光的光致抗蚀剂层，即完成光刻；(9) Coat the silicon wafer with photoresist after cleaning, then align it with the mask and expose it, then dissolve the unphotosensitive photoresist layer with developer solution, and dissolve the non-photoresist layer with corrosion solution The silicon dioxide layer protected by the agent, and finally remove the photoresist layer that has been photosensitive, that is, the photolithography is completed;
（10）对光刻完成后的硅片进行湿法刻蚀，使其去除遮蔽膜的材料，然后将其清洗干净待用；(10) Perform wet etching on the silicon wafer after photolithography to remove the material of the masking film, and then clean it for use;
（11）将已经刻蚀之后的硅片进行表面金属化处理，使其看起来更加光泽亮丽，然后再对硅片进行一次光刻处理；(11) Metallize the surface of the etched silicon wafer to make it look more shiny and bright, and then perform a photolithography treatment on the silicon wafer;
（12）处理完成后即便完成晶片的生产。(12) After the processing is completed, the production of the wafer is completed.
本发明的有益效果是：在整个过程中进过反复的分离、清洗和吹砂能够有效提高生产效率，降低生产成本，而且自主创新的扩散工艺能够提高产品质量，于提高工作效率。The beneficial effects of the invention are: the repeated separation, cleaning and sand blowing in the whole process can effectively improve production efficiency and reduce production cost, and the self-innovated diffusion process can improve product quality and work efficiency.
具体实施方式：Detailed ways:
为了使本发明实现的技术手段、创作特征、达成目的与功效易于明白了解，下面结合具体示例，进一步阐述本发明。In order to make the technical means, creative features, goals and effects achieved by the present invention easy to understand, the present invention will be further described below in conjunction with specific examples.
GPP二极管芯片生产工艺流程主要包括以下方法进行加工：The production process of GPP diode chips mainly includes the following methods for processing:
选取质量优异的硅片对硅片进行清洗，将硅片放置在清洗机上对其进行物理清洗，在清洗完成后将其取出待用，在硅片清洗完成后使用涂磷机器对其进行帖磷和附磷操作，操作完成后采用激光技术对硅片进行分离，分离完成后对已经分离过的硅片进行单面吹砂，将其放置在喷砂机中对硅片的单面进行喷砂，喷砂完成后进行清洗然后待用，将单面吹砂后的硅片进行喷硼操作，在喷砂面涂覆一层溶有三氧化二硼和硝酸铝的混合溶剂，将硅片放置在经过1220℃高温设备中2小时左右，使磷原子扩散到硅片内部，将扩散后的硅片放置在氢氟酸中数天后使其自动进行硅片分离，将分离后的硅片放置在喷砂机中，对分离后的硅片的两面继续进行吹砂，喷砂完成后进行清洗待用，将清洗完成后的硅片涂布光致抗蚀剂然后套准掩模板并曝光，然后用显影液溶解未感光的光致抗蚀剂层、用腐蚀液溶解掉无光致抗蚀剂保护的二氧化硅层，最后去除已感光的光致抗蚀剂层，即完成光刻，对光刻完成后的硅片进行湿法刻蚀，使其去除遮蔽膜的材料，然后将其清洗干净待用，将已经刻蚀之后的硅片进行表面金属化处理，使其看起来更加光泽亮丽，然后再对硅片进行一次光刻处理，处理完成后即便完成晶片的生产。Select high-quality silicon wafers to clean the silicon wafers, place the silicon wafers on the cleaning machine for physical cleaning, take them out after cleaning, and use a phosphorus coating machine to apply phosphorus to the silicon wafers after cleaning After the operation is completed, laser technology is used to separate the silicon wafers. After the separation is completed, the separated silicon wafers are sand blasted on one side, and placed in a sandblasting machine to blast one side of the silicon wafers. After sandblasting is completed, clean and then stand by, perform boron spraying operation on the silicon wafer after sandblasting on one side, coat a layer of mixed solvent containing boron trioxide and aluminum nitrate on the sandblasting surface, and place the silicon wafer on the After about 2 hours in the high-temperature equipment at 1220°C, the phosphorus atoms are diffused into the silicon wafer, and the diffused silicon wafer is placed in hydrofluoric acid for several days to automatically separate the silicon wafer, and the separated silicon wafer is placed in the spray In the sand machine, continue sand blowing on both sides of the separated silicon wafer. After the sandblasting is completed, it is cleaned for use. The cleaned silicon wafer is coated with photoresist and then aligned with the mask and exposed. The developer dissolves the unphotosensitive photoresist layer, dissolves the silicon dioxide layer without photoresist protection with an etching solution, and finally removes the photosensitive photoresist layer, that is, the photolithography is completed. The silicon wafer after etching is wet-etched to remove the material of the masking film, and then cleaned for use, and the surface of the etched silicon wafer is metallized to make it look more shiny and bright. Then the silicon wafer is subjected to a photolithography process, and the production of the wafer is completed after the process is completed.
在整个生产的过程中一定要遵循：清洗硅片—喷磷—一次分离—单面吹砂—涂硼—硅片扩散—二次分离—双面吹砂—光刻、刻蚀—清洗烘干—表面金属化—完成晶片的整个过程，这样生产出来的GPP二极管芯片才会更加稳定，同时效率也提高了成本也相对有所降低。During the whole production process, it must be followed: cleaning silicon wafers—phosphorus spraying—primary separation—single-sided sand blasting—boron coating—silicon wafer diffusion—secondary separation—double-sided sand blasting—photolithography, etching—cleaning and drying —Surface metallization—to complete the whole process of the wafer, so that the produced GPP diode chips will be more stable, and the efficiency will be improved and the cost will be relatively reduced.
以上显示和描述了本发明的基本原理和主要特征和本发明的优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。The basic principles and main features of the present invention and the advantages of the present invention have been shown and described above. Those skilled in the industry should understand that the present invention is not limited by the above-mentioned embodiments. What are described in the above-mentioned embodiments and the description only illustrate the principle of the present invention. Without departing from the spirit and scope of the present invention, the present invention will also have Variations and improvements are possible, which fall within the scope of the claimed invention. The protection scope of the present invention is defined by the appended claims and their equivalents.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104269349A (en) * | 2014-09-30 | 2015-01-07 | 如皋市大昌电子有限公司 | Bridge rectifier cleaning process |
| CN107597474A (en) * | 2017-08-22 | 2018-01-19 | 杭州西风半导体有限公司 | A kind of boron diffusion device |
| CN108899270A (en) * | 2018-07-11 | 2018-11-27 | 陈涛 | A kind of chip production method |
| CN113329564A (en) * | 2021-04-10 | 2021-08-31 | 山东永而佳电子科技有限公司 | Light-emitting diode production process and surface roughening processing device |
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| US20090146168A1 (en) * | 2006-04-21 | 2009-06-11 | Wavenics Inc. | High efficiency led with multi-layer reflector structure and method for fabricating the same |
| CN103606522A (en) * | 2013-10-23 | 2014-02-26 | 蚌埠天宇机械工具有限公司 | GPP diode chip production process |
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2013
- 2013-11-06 CN CN201310545387.4A patent/CN103606523A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20090146168A1 (en) * | 2006-04-21 | 2009-06-11 | Wavenics Inc. | High efficiency led with multi-layer reflector structure and method for fabricating the same |
| CN103606522A (en) * | 2013-10-23 | 2014-02-26 | 蚌埠天宇机械工具有限公司 | GPP diode chip production process |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104269349A (en) * | 2014-09-30 | 2015-01-07 | 如皋市大昌电子有限公司 | Bridge rectifier cleaning process |
| CN107597474A (en) * | 2017-08-22 | 2018-01-19 | 杭州西风半导体有限公司 | A kind of boron diffusion device |
| CN108899270A (en) * | 2018-07-11 | 2018-11-27 | 陈涛 | A kind of chip production method |
| CN113329564A (en) * | 2021-04-10 | 2021-08-31 | 山东永而佳电子科技有限公司 | Light-emitting diode production process and surface roughening processing device |
| CN113329564B (en) * | 2021-04-10 | 2022-04-19 | 山东永而佳电子科技有限公司 | Light-emitting diode production process and surface roughening processing device |
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Application publication date: 20140226 |