CN103123444A - Developing method of photolithography process - Google Patents
Developing method of photolithography process Download PDFInfo
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- CN103123444A CN103123444A CN2013100790091A CN201310079009A CN103123444A CN 103123444 A CN103123444 A CN 103123444A CN 2013100790091 A CN2013100790091 A CN 2013100790091A CN 201310079009 A CN201310079009 A CN 201310079009A CN 103123444 A CN103123444 A CN 103123444A
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- tmah solution
- positivity
- photoresist layer
- photoresist
- photo resist
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Abstract
The invention provides a developing method of the photolithography process, which comprises the following steps: coating a photo resist layer at the semiconductor wafer; exposing and baking the photo resist layer; sprinkling positive TMAH solution to the photo resist layer to remove the fully exposed photo resist layer; baking the positive TMAH solution at a high temperature to form a first graphical photo resist; and then sprinkling negative TMAH solution to the first graphical photo resist to remove the unexposed photo resist layer and preserve the partly exposed photo resist layer. Therefore, in the method disclosed by the invention, firstly the positive developing solution is utilized to remove the fully exposed photo resist layer, and high-temperature baking is conducted to form the first graphical photo resist; then the negative developing solution is utilized to remove the unexposed photo resist layer and preserve the partly exposed photo resist layer to form a second graphical photo resist, namely, a photolithography graphic with a smaller line width is formed, furthermore the process precision of the semiconductor wafer, especially the process precision of the line width size can be improved.
Description
Technical field
The present invention relates to SIC (semiconductor integrated circuit) manufacturing process field, relate in particular to a kind of developing method of photoetching process.
Background technology
Along with the continuous progress of SIC (semiconductor integrated circuit) manufacturing process, the continuous minimizing of live width, it is more and more less that the area of semiconductor devices is just becoming.SIC (semiconductor integrated circuit) is also from initial integrated circuit to large scale integrated circuit, VLSI (very large scale integrated circuit), until the ULSI of today, its function is more comprehensive, powerful.Consider the restriction of the complicacy, chronicity of technique research and development and high cost etc. unfavorable factor, how further to improve on the basis of existing technology device integration density, dwindle the area of chip, with the Effective number of chips that obtains as much as possible on same piece of silicon chip, thereby the raising overall efficiency will more and more be subject to the attention of chip designer, manufacturer.
In the SIC (semiconductor integrated circuit) manufacturing process, photoetching technique is undoubtedly a wherein ring of most critical.Before carrying out Implantation or etching, need to form photoetching agent pattern by photoetching process, with the pre-defined zone that goes out to be etched or Implantation.Thereby the minimum dimension that whole chip technology can reach is determined by photoetching process.
Existing photoetching process, at first the method by spin coating forms photoresist layer on semiconductor wafer; This photoresist layer is toasted (Bake) is placed in exposure sources, by exposure technology, described photoresist layer is exposed, with the design transfer on mask plate in photoresist layer; Then the photoresist layer after exposure is carried out postexposure bake (Post Exposure Bake, PEB), the standing wave effect when exposing to eliminate; Above-mentioned photoresist layer is developed, the zone that photoresist layer is exposed and developer solution generation chemical reaction and dissolve, then with deionized water rinse will dissolving photoresist remove, thereby formed photoengraving pattern as shown in Figure 1.
Yet above-mentioned developing process usually is difficult to form the litho pattern of less live width, can cause further the deviation of etching or Implantation, causes the especially decline of the craft precision of live width size of craft precision of semiconductor wafer.
Summary of the invention
Fundamental purpose of the present invention is, for the problems referred to above, proposed a kind of developing method of photoetching process, and the method is by single exposure, and then utilize positivity developer solution and negativity developer solution be used in combination develop.First utilize the positivity developer solution to remove the photoresist layer that is exposed fully, and high temperature cures to form the first graphical photoresist, and then the photoresist layer that utilizes the negativity developer solution to remove not to be exposed and keep the photoresist layer that is partly exposed, to form the second graphical photoresist.
For reaching above-mentioned purpose, the invention provides a kind of developing method of photoetching process, comprising:
Semiconductor wafer is provided;
Be coated with photoresist layer on described semiconductor wafer;
Expose and cure described photoresist layer;
Spray positivity TMAH solution to described photoresist layer, to remove the described photoresist layer that is exposed fully, wherein, it is surperficial that described positivity TMAH solution is covered with whole described photoresist layer;
High temperature cures described positivity TMAH solution, to form the first graphical photoresist;
Spray negativity TMAH solution to the described first graphical photoresist again, removing the photoresist layer that is not exposed, and
The described photoresist layer that reservation is partly exposed.
Preferably, described temperature of curing described photoresist layer is 21 ℃ ~ 24 ℃.
Preferably, the mass percent concentration of described positivity TMAH solution is 2% ~ 7%.
Preferably, the spray rate of described positivity TMAH solution is 1ml/s ~ 1000ml/s.
Preferably, the spraying time of described positivity TMAH solution is 0.1s ~ 100s.
Preferably, to cure the temperature of described positivity TMAH solution be 50 ℃ ~ 100 ℃ to described high temperature.
Preferably, to cure the time of described positivity TMAH solution be 1s ~ 100s to described high temperature.
Preferably, described photoresist layer is the positive photoresist layer.
Preferably, describedly be positioned at by complete exposed photoresist and be not exposed in the middle of photoresist by the part exposed photoresist; Describedly not only be insoluble to positivity TMAH solution but also be insoluble to negativity TMAH solution by the part exposed photoresist.
Preferably, described positivity TMAH solution is alkalescent; Described negativity TMAH solution is faintly acid.
Can find out from technique scheme, the developing method of a kind of photoetching process of the present invention, the method is by single exposure, and then utilize positivity developer solution and negativity developer solution be used in combination develop.First utilize the positivity developer solution to remove the photoresist layer that is exposed fully, and high temperature cure to form the first graphical photoresist.And then the photoresist layer that utilizes the negativity developer solution to remove not to be exposed and keep the photoresist layer that is partly exposed, to form the second graphical photoresist, namely formed the litho pattern of less live width, and then the craft precision that the has improved semiconductor wafer craft precision of live width size especially.Therefore, it is keeping having realized the litho pattern of less live width under the prerequisite of technology stability method of the present invention, and the craft precision that has improved semiconductor wafer is the craft precision of live width size especially.
Description of drawings
Fig. 1 is the developing method schematic diagram of photoetching process in prior art;
Fig. 2 is the schematic flow sheet of a preferred embodiment of the developing method of photoetching process of the present invention;
Fig. 3 ~ 7 are the concrete steps schematic diagram of the developing method of photoetching process of the present invention.
Embodiment
Some exemplary embodiments that embody feature ﹠ benefits of the present invention will be described in detail in the explanation of back segment.Be understood that the present invention can have various variations on different examples, its neither departing from the scope of the present invention, and explanation wherein and be shown in the use that ought explain in essence, but not in order to limit the present invention.
Core concept of the present invention is, a kind of developing method of photoetching process is provided, and the method is by single exposure, and then utilize positivity developer solution and negativity developer solution be used in combination develop.First utilize the positivity developer solution to remove the photoresist layer that is exposed fully, and high temperature cure to form the first graphical photoresist.Then, recycling negativity developer solution is removed the photoresist layer that is not exposed and is kept the photoresist layer that is partly exposed, to form the second graphical photoresist, namely formed the litho pattern of less live width, and then the craft precision that the has improved semiconductor wafer craft precision of live width size especially.Therefore, it is keeping having realized the litho pattern of less live width under the prerequisite of technology stability method of the present invention, and the craft precision that has improved semiconductor wafer is the craft precision of live width size especially.
Above-mentioned and other technical characterictic and beneficial effect are elaborated in connection with the developing method of embodiment and 2 ~ 7 pairs of photoetching processes of the present invention of accompanying drawing.
See also Fig. 2, Fig. 2 is the schematic flow sheet of a preferred embodiment of the developing method of photoetching process of the present invention.Need to prove, in enforcement of the present invention, be the effect of the developing method of showing better photoetching process of the present invention, the concrete steps that see also the developing method of 3 ~ 7 pairs of photoetching processes of the present invention of accompanying drawing are described in detail.
See also Fig. 3, as shown in Figure 3, provide semiconductor wafer 100, semiconductor wafer 100 can be to only have silicon substrate, can be also to deposit one deck or multi-lager semiconductor film on silicon substrate, and this present invention is not imposed any restrictions.
See also Fig. 4, as shown in Figure 4, on above-mentioned semiconductor wafer 100, by coating process deposit one deck photoresist layer 200, wherein, this photoresist layer 200 is positive photoresist.In the present embodiment, positive photoresist layer 200 is a kind of organic mixtures, is alkalescent, is slightly soluble in alkaline-based developer before exposure.Yet, positive photoresist layer 200 corresponding to the light shield transmission region is exposed after light source irradiation fully, its large molecular scission, form the organic acid with carboxyl after remaining organic group alienation, meet alkaline-based developer and can generate the extremely strong salt of solubility, be easy to be removed after the acid-base neutralization reaction finishes; Otherwise the photoresist in light shield light tight zone does not have illuminated unexposed after namely, and its dissolubility in developer solution is extremely low, is dissolved in hardly developer solution; In addition, comprise that also the photoresist that is partly exposed is positioned at by complete exposed photoresist and is not exposed in the middle of photoresist, wherein not only is insoluble to positivity TMAH solution but also be insoluble to negativity TMAH solution by the part exposed photoresist.
See also Fig. 5, as shown in Figure 5, for the figure on light shield 300 being transferred to the surface of wafer, in litho machine, wafer is accurately aimed at.The light source of litho machine can optionally expose through the photoresist layer 200 of 300 pairs of crystal column surfaces of light shield, the positive photoresist layer 200 of light shield transmission region is exposed after light source irradiation fully, its large molecular scission, form the organic acid with carboxyl after remaining organic group alienation, meet alkaline-based developer and can generate the extremely strong salt of solubility, be easy to be removed after the acid-base neutralization reaction finishes; Otherwise the photoresist in light shield light tight zone does not have illuminated unexposed after namely, and its dissolubility in developer solution is extremely low, is dissolved in hardly developer solution; In addition, comprise that also the photoresist that is partly exposed is positioned at by complete exposed photoresist and is not exposed in the middle of photoresist, wherein not only is insoluble to positivity TMAH solution but also be insoluble to negativity TMAH solution by the part exposed photoresist.Usually the standing wave effect that causes in order to reduce the photochemical reaction diffusion will toast photoresist layer 200 after exposure, and further, its baking temperature is 21 ℃ ~ 24 ℃.
See also Fig. 6, as shown in Figure 6, spray positivity TMAH solution on the photoresist layer 200 after above-mentioned being exposed, wherein this positivity TMAH solution is alkalescent, and further, the mass percent concentration of this positivity TMAH solution is 2% ~ 7%.In other embodiments of the invention, the mass percent concentration of described TMAH solution 21 also can be higher or lower.This positivity TMAH solution can spray positivity TMAH solution by the photoresist layer 200 after to above-mentioned being exposed by nozzle (Nozzle) commonly used in semiconductor technology.The uniformity coefficient of the speed of the spray rate of this positivity TMAH solution and this positivity TMAH solution on semiconductor wafer 100 presents certain negative correlation, namely the spray rate of this positivity TMAH solution is faster, and the uniformity coefficient of the positivity TMAH solution on semiconductor wafer 100 is just poorer.Certainly, if the spray rate of this positivity TMAH solution is slower, the required process time longer, namely production cost is higher.Consider various factors, preferably, the spray rate of spraying this positivity TMAH solution is 1ml/s ~ 1000ml/s; And the spraying time that sprays this positivity TMAH solution is 0.1s ~ 100s.In the present embodiment, the spray rate of this positivity TMAH solution is 1ml/s ~ 1000ml/s, and its spraying time is 0.1s ~ 100s.
Then, the photoresist layer 200 that is exposed fully and positivity TMAH solution generation acid-base neutralization react and dissolve, but 200 of the photoresist layer 200 that is partly exposed and unexposed photoresist layers are slightly soluble in TMAH solution.Then, cure a period of time to remove the positivity TMAH solution of above-mentioned remnants fully by high temperature, just formed the first graphical photoresist 210, further, its stoving temperature is 50 ℃ ~ 100 ℃, and its high temperature time of baking and banking up with earth is 1s ~ 100s.
See also Fig. 7, as shown in Figure 7, spray negativity TMAH solution on the above-mentioned first graphical photoresist 210.Wherein, this negativity TMAH solution is faintly acid, it reacts to remove with the photoresist generation acid-base neutralization that is not exposed the photoresist that is not exposed, and the photoresist layer that reservation is partly exposed is to form second graphical photoresist 220, namely formed the litho pattern of less live width, and then the craft precision that the has improved semiconductor wafer craft precision of live width size especially.
In sum, by method of the present invention, first utilize the positivity developer solution to remove the photoresist layer that is exposed fully, and high temperature cure to form the first graphical photoresist.And then the photoresist layer that utilizes the negativity developer solution to remove not to be exposed and keep the photoresist layer that is partly exposed, to form the second graphical photoresist, namely formed the litho pattern of less live width, and then the craft precision that the has improved semiconductor wafer craft precision of live width size especially.Therefore, it is keeping having realized the litho pattern of less live width under the prerequisite of technology stability method of the present invention, and the craft precision that has improved semiconductor wafer is the craft precision of live width size especially.
Above-described is only embodiments of the invention; described embodiment limits scope of patent protection of the present invention; therefore the equivalent structure done of every utilization instructions of the present invention and accompanying drawing content changes, and in like manner all should be included in protection scope of the present invention.
Claims (10)
1. the developing method of a photoetching process, is characterized in that, comprising:
Semiconductor wafer is provided;
Be coated with photoresist layer on described semiconductor wafer;
Expose and cure described photoresist layer;
Spray positivity TMAH solution to described photoresist layer, to remove the described photoresist layer that is exposed fully, wherein, it is surperficial that described positivity TMAH solution is covered with whole described photoresist layer;
High temperature cures described positivity TMAH solution, to form the first graphical photoresist;
Spray negativity TMAH solution to the described first graphical photoresist again, removing the photoresist layer that is not exposed, and
The described photoresist layer that reservation is partly exposed.
2. the developing method of photoetching process according to claim 1, is characterized in that, described temperature of curing described photoresist layer is 21 ℃ ~ 24 ℃.
3. the developing method of photoetching process according to claim 1, is characterized in that, the mass percent concentration of described positivity TMAH solution is 2% ~ 7%.
4. the developing method of photoetching process according to claim 1, is characterized in that, the spray rate of described positivity TMAH solution is 1ml/s ~ 1000ml/s.
5. the developing method of photoetching process according to claim 1, is characterized in that, the spraying time of described positivity TMAH solution is 0.1s ~ 100s.
6. the developing method of photoetching process according to claim 1, is characterized in that, the temperature that described high temperature cures described positivity TMAH solution is 50 ℃ ~ 100 ℃.
7. the developing method of photoetching process according to claim 1, is characterized in that, the time that described high temperature cures described positivity TMAH solution is 1s ~ 100s.
8. the developing method of photoetching process according to claim 1, is characterized in that, described photoresist layer is the positive photoresist layer.
9. the developing method of photoetching process according to claim 1, is characterized in that, describedly is positioned at by complete exposed photoresist and is not exposed in the middle of photoresist by the part exposed photoresist; Describedly not only be insoluble to positivity TMAH solution but also be insoluble to negativity TMAH solution by the part exposed photoresist.
10. the developing method of photoetching process according to claim 1, is characterized in that, described positivity TMAH solution is alkalescent; Described negativity TMAH solution is faintly acid.
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| CN2013100790091A CN103123444A (en) | 2013-03-12 | 2013-03-12 | Developing method of photolithography process |
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| CN2013100790091A CN103123444A (en) | 2013-03-12 | 2013-03-12 | Developing method of photolithography process |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105261558A (en) * | 2014-07-04 | 2016-01-20 | 无锡华润上华科技有限公司 | Manufacturing method for semiconductor |
| CN113582846A (en) * | 2021-08-05 | 2021-11-02 | 安徽熙泰智能科技有限公司 | Photoresist monomer, preparation method thereof and photoresist |
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| US20060127820A1 (en) * | 2004-12-13 | 2006-06-15 | Calvin Wu | Method for forming photoresist pattern and method for triming photoresist pattern |
| CN1797198A (en) * | 2004-12-22 | 2006-07-05 | 联华电子股份有限公司 | Method for forming pattern of photoresist and finishing technique |
| US7419771B2 (en) * | 2005-01-11 | 2008-09-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming a finely patterned resist |
| CN101452206A (en) * | 2007-12-03 | 2009-06-10 | 海力士半导体有限公司 | Method for forming mask pattern |
| CN101989046A (en) * | 2009-08-06 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | Pattern transfer method and mask manufacturing method |
| CN102486618A (en) * | 2010-12-02 | 2012-06-06 | 中芯国际集成电路制造(北京)有限公司 | Method for development of water-resistant surface coating-free immersed photoresist |
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Patent Citations (6)
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| US20060127820A1 (en) * | 2004-12-13 | 2006-06-15 | Calvin Wu | Method for forming photoresist pattern and method for triming photoresist pattern |
| CN1797198A (en) * | 2004-12-22 | 2006-07-05 | 联华电子股份有限公司 | Method for forming pattern of photoresist and finishing technique |
| US7419771B2 (en) * | 2005-01-11 | 2008-09-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming a finely patterned resist |
| CN101452206A (en) * | 2007-12-03 | 2009-06-10 | 海力士半导体有限公司 | Method for forming mask pattern |
| CN101989046A (en) * | 2009-08-06 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | Pattern transfer method and mask manufacturing method |
| CN102486618A (en) * | 2010-12-02 | 2012-06-06 | 中芯国际集成电路制造(北京)有限公司 | Method for development of water-resistant surface coating-free immersed photoresist |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105261558A (en) * | 2014-07-04 | 2016-01-20 | 无锡华润上华科技有限公司 | Manufacturing method for semiconductor |
| CN113582846A (en) * | 2021-08-05 | 2021-11-02 | 安徽熙泰智能科技有限公司 | Photoresist monomer, preparation method thereof and photoresist |
| CN113582846B (en) * | 2021-08-05 | 2023-11-24 | 安徽熙泰智能科技有限公司 | Photoresist monomer, preparation method thereof and photoresist |
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Application publication date: 20130529 |