CN203661002U - A rotary-spray wet method etching apparatus - Google Patents
A rotary-spray wet method etching apparatus Download PDFInfo
- Publication number
- CN203661002U CN203661002U CN201320857684.8U CN201320857684U CN203661002U CN 203661002 U CN203661002 U CN 203661002U CN 201320857684 U CN201320857684 U CN 201320857684U CN 203661002 U CN203661002 U CN 203661002U
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- CN
- China
- Prior art keywords
- wafer
- rotary
- etching apparatus
- spray
- shower nozzle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 239000007921 spray Substances 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title abstract description 11
- 238000005530 etching Methods 0.000 title abstract description 4
- 238000001039 wet etching Methods 0.000 claims description 25
- 239000007788 liquid Substances 0.000 claims description 15
- 230000001276 controlling effect Effects 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 239000003595 mist Substances 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 description 11
- 238000005260 corrosion Methods 0.000 description 11
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 238000013329 compounding Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000003518 caustics Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910004077 HF-HNO3 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000006396 nitration reaction Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007514 turning Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
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- ing And Chemical Polishing (AREA)
Abstract
The utility model discloses a rotary-spray wet method etching apparatus comprising a conveyor belt used for transmitting a wafer to a spray station, a rotary apparatus used for rotating the wafer, an upper portion nozzle arranged above the wafer and a lower nozzle arranged below the wafer. The wafer is transmitted to the spray station through the conveyor belt. Chemical solution is sprayed in a mist state on the surface of the wafer by the upper portion nozzle and the lower portion nozzle. Simultaneously, the rotary apparatus drives the wafer to rotate; therefore the uniformity of widths of finger strips of the wafer of an acoustic surface resonator and the flatness of lines at the edges of the finger strips are improved; and the yield rate of chips is raised.
Description
Technical field
The utility model relates to sound surface resonance device Wafer Machining field, relates in particular to a kind of rotary spray wet etching apparatus.
Background technology
Wet chemical etching technique is the processing method of manufacturing for micro mechanical structure the earliest.So-called wet etching, is placed in wafer exactly liquid chemical corrosion liquid and corrodes, in corrosion process, corrosive liquid by the material that it is contacted by chemical reaction progressively etch dissolve away.Reagent for chemical corrosion is a lot, has sour corrosion agent, alkaline corrosion agent and organic corrosion agent etc.According to selected corrosive agent, can be divided into again isotropic etch and anisotropic etchant.The reagent of isotropic etch is a lot, wrap various salts (as CN base, NH base etc.) and acid, but owing to being subject to obtaining high purity reagent, and wish to avoid the restriction of staining these two factors of metal ion, therefore extensively adopt HF-HNO3 etching system.Anisotropic etch refers to that the different crystal faces of silicon are had to different corrosion rates.Based on this etching characteristic, can on silicon substrate, process various micro-structurals.Anisotropic etchant is generally divided into two classes, and a class is organic corrosion agent, comprises EPW (ethylenediamine, catechol and water) and diamine etc., and another kind of is inorganic corrosive agent, comprises alkaline corrosion liquid, as KOH, NaOH, NH4OH etc.
With dry method comparatively speaking, the corrosion rate of wet method is fast, anisotropy is poor, cost is low, corrosion thickness can reach the thickness of whole silicon chip, has higher mechanical sensitivity.
But the method for existing wet etching adopts nitration mixture heating infusion method mostly, shortcoming is that the wafer finger width that adopts the method to produce is inhomogeneous, the easy flexural deformation of finger edge lines.
In view of this, prior art haves much room for improvement and improves.
Utility model content
In view of the deficiencies in the prior art, the utility model object is to provide a kind of rotary spray wet etching apparatus.Be intended to solve the wafer finger width that existing wet etching produces inhomogeneous, the easy diastrophic problem of finger edge lines.
The technical solution of the utility model is as follows:
A kind of rotary spray wet etching apparatus, wherein, comprising:
For wafer being conveyed into the conveyer belt of spray station;
For rotating the whirligig of wafer;
Be arranged on the top shower nozzle of wafer top;
Be arranged on the bottom shower nozzle of wafer below;
Wafer is sent to spray station by conveyer belt, and top shower nozzle and bottom shower nozzle nebulize spray to wafer surface by liquid, and whirligig drives wafer rotation simultaneously.
Described rotary spray wet etching apparatus, wherein, also comprises that one for controlling the control device of rotary speed and angle of whirligig, described control device connection rotary device.
Described rotary spray wet etching apparatus, wherein, also comprises that one for being retracted to liquid the force (forcing) pump of top, bottom shower nozzle from dipper.
Described rotary spray wet etching apparatus, wherein, is provided with one for regulating the adjusting device of line speed on conveyer belt.
Beneficial effect:
Rotary spray wet etching apparatus of the present utility model, is sent to spray station by conveyer belt by wafer, and top shower nozzle and bottom shower nozzle nebulize spray to wafer surface by liquid, and whirligig drives wafer rotation simultaneously.Thereby can improve the smooth of the uniformity of sound surface resonance device wafer finger width and finger edge lines, improve the yields of chip.
Brief description of the drawings
Fig. 1 is the schematic diagram of the embodiment of rotary spray wet etching apparatus of the present utility model.
Fig. 2 is the schematic diagram of conveyer belt in the embodiment of rotary spray wet etching apparatus of the present utility model.
Fig. 3 is the rotating speed schematic diagram corresponding with the time of whirligig in the embodiment of rotary spray wet etching apparatus of the present utility model.
Embodiment
The utility model provides a kind of rotary spray wet etching apparatus, for making the purpose of this utility model, technical scheme and effect clearer, clear and definite, below the utility model is further described.Should be appreciated that specific embodiment described herein is only in order to explain the utility model, and be not used in restriction the utility model.
Refer to Fig. 1, it is the schematic diagram of the embodiment of rotary spray wet etching apparatus of the present utility model.As shown in the figure, described rotary spray wet etching apparatus comprises: for wafer 10 is conveyed into the conveyer belt (not shown) of spray station, for rotate wafer 10 whirligig (not shown), be arranged on the top shower nozzle 100 of wafer 10 tops and be arranged on the bottom shower nozzle 200 of wafer 10 belows
Specifically, wafer 10 is sent to spray station by conveyer belt, top shower nozzle 100 and bottom shower nozzle 200 nebulize spray to wafer 10 surfaces by liquid, and whirligig drives wafer 10 to rotate (direction of rotation in figure, for turning clockwise, also can be designed as and is rotated counterclockwise) simultaneously.
Please continue to refer to Fig. 2, it is the schematic diagram of conveyer belt in the embodiment of rotary spray wet etching apparatus of the present utility model.As shown in the figure, described conveyer belt 300 drives wafer 10 to move, and further, is provided with one for regulating the adjusting device of line speed on conveyer belt 300.
Further, in described rotary spray wet etching apparatus, also comprise that one for controlling the control device of rotary speed and angle of whirligig, described control device connection rotary device.As shown in Figure 3, the rotating speed of described rotation and the corresponding relation of time: its spray process is divided into 5 stage: STEP1, STEP2, STEP3, STEP4 and STEP5.Every one-phase all arranges a rotating speed: N1, N2, N3, N4 and N5.
Illustrate below by a concrete example how above-mentioned rotary spray wet etching apparatus works:
First, configuration liquid: phosphoric acid: 4L nitric acid: 0.4L acetic acid: 2L water: 0.05L
Then, be ready to compounding bin, bring gloves and safety goggles, pour in compounding bin by the order of phosphoric acid → acetic acid → nitric acid → water, cover lid, shakes up, and compounding bin stirs more than at least 20 times up and down back and forth.Add again and in dipper, be heated to 55 ± 0.5 DEG C and use circulating pump that liquid is circulated to keep being heated evenly.
Then, by conveyer belt, wafer is sent to acidleach chamber place, by force (forcing) pump, liquid is extracted out from dipper, by top shower nozzle, bottom shower nozzle, liquid is nebulized to spray to wafer surface, whirligig drives wafer to be rotated according to the program of setting simultaneously.
After acidleach is complete, wafer completes after spray washing is dry.
In sum, the disclosed rotary spray wet etching apparatus of the utility model, it comprises: for wafer is conveyed into the conveyer belt of spray station, for rotate wafer whirligig, be arranged on the top shower nozzle of wafer top and be arranged on the bottom shower nozzle of wafer below.By conveyer belt, wafer is sent to spray station, top shower nozzle and bottom shower nozzle nebulize spray to wafer surface by liquid, and whirligig drives wafer rotation simultaneously.Thereby can improve the smooth of the uniformity of sound surface resonance device wafer finger width and finger edge lines, improve the yields of chip.
Should be understood that; application of the present utility model is not limited to above-mentioned giving an example; for those of ordinary skills, can be improved according to the above description or convert, all these improvement and conversion all should belong to the protection range of the utility model claims.
Claims (4)
1. a rotary spray wet etching apparatus, is characterized in that, comprising:
For wafer being conveyed into the conveyer belt of spray station;
For rotating the whirligig of wafer;
Be arranged on the top shower nozzle of wafer top;
Be arranged on the bottom shower nozzle of wafer below;
Wafer is sent to spray station by conveyer belt, and top shower nozzle and bottom shower nozzle nebulize spray to wafer surface by liquid, and whirligig drives wafer rotation simultaneously.
2. rotary spray wet etching apparatus according to claim 1, is characterized in that, also comprises that one for controlling the control device of rotary speed and angle of whirligig, described control device connection rotary device.
3. rotary spray wet etching apparatus according to claim 1, is characterized in that, also comprises that one for being retracted to liquid the force (forcing) pump of top, bottom shower nozzle from dipper.
4. rotary spray wet etching apparatus according to claim 1, is characterized in that, is provided with one for regulating the adjusting device of line speed on conveyer belt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320857684.8U CN203661002U (en) | 2013-12-24 | 2013-12-24 | A rotary-spray wet method etching apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320857684.8U CN203661002U (en) | 2013-12-24 | 2013-12-24 | A rotary-spray wet method etching apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203661002U true CN203661002U (en) | 2014-06-18 |
Family
ID=50927350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320857684.8U Expired - Lifetime CN203661002U (en) | 2013-12-24 | 2013-12-24 | A rotary-spray wet method etching apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203661002U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109799559A (en) * | 2019-04-01 | 2019-05-24 | 郑州恒昊光学科技有限公司 | A kind of etching technics and glass dot grating obtained of glass dot grating |
| WO2020258511A1 (en) * | 2019-06-28 | 2020-12-30 | 深圳市华星光电技术有限公司 | Wet etching method and device |
-
2013
- 2013-12-24 CN CN201320857684.8U patent/CN203661002U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109799559A (en) * | 2019-04-01 | 2019-05-24 | 郑州恒昊光学科技有限公司 | A kind of etching technics and glass dot grating obtained of glass dot grating |
| CN109799559B (en) * | 2019-04-01 | 2021-04-27 | 郑州恒昊光学科技有限公司 | Etching process of glass dot grating and prepared glass dot grating |
| WO2020258511A1 (en) * | 2019-06-28 | 2020-12-30 | 深圳市华星光电技术有限公司 | Wet etching method and device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: No. 101, 201, 301, 401, building 2, phase I, intelligent manufacturing industrial park, high tech Zone, Wuxing District, Huzhou City, Zhejiang Province, 313000 Patentee after: Zhejiang Huayuan Micro Electronics Technology Co.,Ltd. Address before: 518125 No.5, Zhuangcun Road, Shajing street, Bao'an District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN HUAYUAN MICRO ELECTRONIC TECHNOLOGY Co.,Ltd. |
|
| CP03 | Change of name, title or address | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140618 |
|
| CX01 | Expiry of patent term |