CN103579107B - A kind of thin film circuit cutting-up method based on mask plating - Google Patents
A kind of thin film circuit cutting-up method based on mask plating Download PDFInfo
- Publication number
- CN103579107B CN103579107B CN201310595685.4A CN201310595685A CN103579107B CN 103579107 B CN103579107 B CN 103579107B CN 201310595685 A CN201310595685 A CN 201310595685A CN 103579107 B CN103579107 B CN 103579107B
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- Prior art keywords
- cutting
- thin film
- mask
- film circuit
- joint
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
Abstract
The invention discloses a kind of thin film circuit cutting-up method based on mask plating; by forming illuvium and produce thin film circuit figure on ready substrate; then the mask plate for the protection of joint-cutting is made; the illuvium of substrate is formed the mask for the protection of joint-cutting; and utilize mask plating technique to thicken thin film circuit figure; remove mask and reserve the joint-cutting only having illuvium, finally utilize sand-wheel slice cutting machine to obtain finished parts along the joint-cutting place cutting-up of workpiece.The present invention has the galvanic insulation effect of photoresist due to joint-cutting place, when avoiding plating, the joint-cutting place coat of metal thickens, emery wheel is made to directly act on thinner illuvium, the metal excreta produced when effectively reducing cutting-up, thus decrease the generation of metallic bur power and rete obscission, improve cutting-up quality and the rate of finished products of thin film circuit.
Description
Technical field
The present invention relates to a kind of thin film circuit cutting-up method based on mask plating.
Background technology
In the thin film circuit manufacture craft of hybrid integrated circuit, utilizing sand-wheel slice cutting machine to carry out cutting-up to thin film circuit is one of more common thin film circuit sharp processing means.
Thin film circuit generally has sandwich construction, underlying substrate adopts hard material such as pottery, jewel, quartz etc., upper strata mostly is illuvium and the electrodeposited coating of metal or metallic compound formation, illuvium is formed by modes such as evaporation, sputtering or chemical vapor depositions, thickness is generally at 20 ~ 500nm, electrodeposited coating is that Seed Layer carries out electroplating technology thickening with illuvium, and its signal main trans-port layer, thickness is generally at 1 ~ 5um.Mask plating is directly stayed on substrate by photoresist when photoetching, directly carries out the technology of parcel plating, and mask plating technology is as a kind of parcel plating technology, relatively ripe, has and apply comparatively widely in thin film circuit.
The cutting-up method of conventional films circuit is: first directly adhered on the glass substrate with adhesives such as sealing wax, rosin or seccotines by workpiece or bond with blue film, then directly carrying out cutting-up to the profile of thin film circuit with sand-wheel slice cutting machine.Because the general quality of substrate surface metal level is softer, easily there is the phenomenons such as burr and rete come off when using sand-wheel slice cutting machine to carry out cutting-up, especially at thicker plated metal layer segment, the plenty of time is needed to remove burr when follow-up inspection sheet, affect production efficiency, and once rete comes off directly affect rate of finished products.
At present, although some abrasive machine equipment vendors produce thickness by different emery wheel making technique both at home and abroad, material, hardness, particles of silicon carbide degree, the cutter that the parameters such as shape are different, or by improving constantly the rotating speed of abrasive machine, the self performance such as power and stability, to adapt to the material of cutting-up different materials, improve the discharge capacity of cutter, and improve the quality of cutting-up to a certain extent, but due to film circuit board and signals layer material used different, the physical propertys such as its hardness are not identical yet, be difficult to the cutting-up simultaneously taking into account multiple material, the phenomenon that cutting edge metallic bur power and rete come off still can occur.In addition, adopt laser scribing incision technology, acting on surface of the work by superlaser makes workpiece melt or direct gasification, reach the object of workpiece cutting-up, but due to the thermal effect of laser, incision easily forms the problems such as re cast layer, and kerf quality can not show a candle to the quality of emery wheel cutting-up, and this thermal effect also can produce certain influence to the physical property of workpiece signal layer.
Summary of the invention
For the burr easily occurred in conventional films circuit production technique and rete obscission, the present invention proposes a kind of thin film circuit cutting-up method based on mask plating, it adopts following technical scheme:
Based on a thin film circuit cutting-up method for mask plating, comprise the steps:
A, prepared substrate;
B, on substrate deposit go out thin film deposition layer, and produce thin film circuit figure;
C, on the substrate that deposit is good even photoresist;
D, make mask plate for the protection of joint-cutting, and the workpiece of even good photoresist is exposed;
E, produce joint-cutting mask pattern;
F, carry out mask plating;
G, removal mask;
H, employing sand-wheel slice cutting machine, along lancing location cutting-up workpiece, obtain finished parts.
In above-mentioned steps b, go out thin film deposition layer, and go out thin film circuit figure by chemical wet etching by film deposition art deposit on substrate, the deposit mode adopted in described film deposition art comprises sputtering, evaporation and chemical vapour deposition (CVD).
In above-mentioned steps e, after exposure, carry out development and fixing, retain lancing location photoresist mask.
In above-mentioned steps f, utilize electroplating technology to being that plating seed layer thickeies thin film circuit figure with illuvium, form the electrodeposited coating of circuit, lancing location place does not form electrodeposited coating.
Advantage of the present invention is:
The present invention forms illuvium and produces thin film circuit figure on ready substrate; then the mask plate for the protection of joint-cutting is made; the illuvium of substrate is formed the mask for the protection of joint-cutting; and utilize mask plating technique to thicken thin film circuit figure; remove mask and reserve the joint-cutting only having illuvium, finally utilize sand-wheel slice cutting machine to obtain finished parts along the joint-cutting place cutting-up of workpiece.The present invention has the galvanic insulation effect of photoresist due to joint-cutting place, when avoiding plating, the joint-cutting place coat of metal thickens, emery wheel is made to directly act on thinner illuvium, the metal excreta produced when effectively reducing cutting-up, thus decrease the generation of metallic bur power and rete obscission, improve cutting-up quality and the rate of finished products of thin film circuit.
Accompanying drawing explanation
Fig. 1 is the side structure schematic diagram of substrate;
Fig. 2 is the Facad structure schematic diagram of substrate;
Fig. 3 is thin film deposition and forms the side structure schematic diagram of circuitous pattern;
Fig. 4 is thin film deposition and forms the Facad structure schematic diagram of circuitous pattern;
Fig. 5 is the side structure schematic diagram of substrate after even photoresist that deposit is good;
Fig. 6 is the Facad structure schematic diagram of substrate after even photoresist that deposit is good;
Fig. 7 carries out photoetching schematic diagram for being placed in above photoresist by mask plate;
Fig. 8 is the structural representation of mask plate I;
Fig. 9 is the structural representation of mask plate II;
Figure 10 is the side structure schematic diagram that joint-cutting mask pattern makes;
The Facad structure schematic diagram of the joint-cutting mask pattern that Figure 11 makes when being and adopting mask plate I;
The Facad structure schematic diagram of the joint-cutting mask pattern that Figure 12 makes when being and adopting mask plate II;
Figure 13 is through the side structure schematic diagram after mask plating technique;
Figure 14 is Facad structure schematic diagram when adopting mask plate I after mask plating technique;
Figure 15 is Facad structure schematic diagram when adopting mask plate II after mask plating technique;
Figure 16 is through the side structure schematic diagram after removing masking process;
Figure 17 is through the Facad structure schematic diagram after removing masking process;
Figure 18 is the side structure schematic diagram of emery wheel cutting-up;
Figure 19 is the Facad structure schematic diagram of finished parts.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention is described in further detail:
Shown in composition graphs 1 to 19, a kind of thin film circuit cutting-up method based on mask plating, comprises following process step:
A, prepared substrate 1, conventional baseplate material is pottery, jewel, quartz, silicon, GaAs etc., as depicted in figs. 1 and 2;
B, by depositing technics on substrate 1 deposit go out thin film deposition layer 2, and by photoetching, etch thin film circuit figure 3, conventional deposit mode has sputtering, evaporation, chemical vapour deposition (CVD) etc., as shown in Figure 3 and Figure 4;
The thickness of illuvium is d1, and comprise resistive layer, capacitance electrode layer, dielectric layer, adhesion layer and plating seed layer etc., plating seed layer is positioned at the superiors;
C, on the substrate 1 that deposit is good even photoresist, for make mask layer prepare; Photoresist 9 can be attached to substrate surface preferably, to the corrosion-free effect of thin film circuit figure, and is not dissolved by plating solution, and the Thickness Ratio electrodeposited coating of formation is large, as shown in Figure 5 and Figure 6;
D, make mask plate 4 for the protection of lancing location, and the workpiece of even good photoresist 9 is exposed, as shown in Figure 7, the figure carrying out lithography mask version 4 can be the figure of joint-cutting, mask plate I as shown in Figure 8, or can suitably widen when not affecting thin film circuit figure 3 and electroplating, mask plate II right as shown in Fig. 9;
E, produce joint-cutting mask pattern, development and fixing is carried out after exposure, retain lancing location photoresist mask 5, as shown in Figure 10, Figure 11 and Figure 12, the thickness of photoresist mask 5 is d3, is formed, in mask plating, play insulating effect by photoresist, there is good tack to substrate, and be insoluble in electroplate liquid;
Through the joint-cutting mask pattern that steps d and step e make, can joint-cutting be protected preferably not to be plated, and the electroplating work procedure need electroplating part thin film circuit figure can not be affected;
F, mask plating, utilize electroplating technology to thicken thin film circuit figure 3 for plating seed layer with illuvium 2, forms the electrodeposited coating 6 of circuit, lancing location is due to by photoresist mask 5 minor insulation, and fail formed electrodeposited coating, the thickness of electrodeposited coating is d2, as shown in Figure 13, Figure 14 and Figure 15; Mask plating Technical comparing in the present invention is ripe, production cost is little, easy to operate, can directly be integrated in the mask plating technique forming thin film circuit, the thickness d 1 of illuvium is generally 20 ~ 300nm, the thickness of electrodeposited coating is that d2 is generally 1 ~ 5um, the thickness of photoresist mask be d3 slightly larger than d2, the thickness magnitude relationship between three is: d3>d2>d1;
G, removal mask, as shown in Figure 16 and Figure 17;
H, employing sand-wheel slice cutting machine 7, along lancing location cutting-up workpiece, as shown in figure 18, obtain finished parts 8, as shown in figure 19.
Because sand-wheel slice cutting machine can carry out cutting-up according to joint-cutting, emery wheel has the discharge capacity of certain metal, good cutting-up effect is had to substrate and illuvium, the present invention avoids the effect of sand-wheel slice cutting machine 7 pairs of coats of metal, reduce the requirement of workpiece to cutting-up equipment, the controllability of cutting-up equipment is increased.
It should be noted that, to the implementation forming mask and mask plating, be not limited in step c, d, e, f address even glue, plate-making, development, etching and mask plating mode, other can also be adopted to realize the alternative of mask plating, as electroplating tape mask etc.In addition, the present invention also can be applicable in relevant coated element and circuit production technique.
Claims (4)
1., based on a thin film circuit cutting-up method for mask plating, it is characterized in that comprising the steps:
A, prepared substrate;
B, on substrate deposit go out thin film deposition layer, and produce thin film circuit figure;
C, on the substrate that deposit is good even photoresist;
D, make mask plate for the protection of joint-cutting, and the workpiece of even good photoresist is exposed;
E, produce joint-cutting mask pattern;
F, carry out mask plating;
G, removal mask;
H, employing sand-wheel slice cutting machine, along lancing location cutting-up workpiece, obtain finished parts;
In described step e, after exposure, carry out development and fixing, retain lancing location photoresist mask.
2. a kind of thin film circuit cutting-up method based on mask plating according to claim 1, is characterized in that, in described step b, go out thin film deposition layer, and go out thin film circuit figure by chemical wet etching by film deposition art deposit on substrate.
3. a kind of thin film circuit cutting-up method based on mask plating according to claim 2, is characterized in that, the thin film deposition mode adopted in described depositing technics comprises sputtering, evaporation and chemical vapour deposition (CVD).
4. a kind of thin film circuit cutting-up method based on mask plating according to claim 1, it is characterized in that, in described step f, utilize electroplating technology to being that plating seed layer thickeies thin film circuit figure with illuvium, form the electrodeposited coating of circuit, lancing location place does not form electrodeposited coating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310595685.4A CN103579107B (en) | 2013-11-21 | 2013-11-21 | A kind of thin film circuit cutting-up method based on mask plating |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310595685.4A CN103579107B (en) | 2013-11-21 | 2013-11-21 | A kind of thin film circuit cutting-up method based on mask plating |
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| Publication Number | Publication Date |
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| CN103579107A CN103579107A (en) | 2014-02-12 |
| CN103579107B true CN103579107B (en) | 2015-10-14 |
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| CN201310595685.4A Expired - Fee Related CN103579107B (en) | 2013-11-21 | 2013-11-21 | A kind of thin film circuit cutting-up method based on mask plating |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105448800B (en) * | 2015-11-25 | 2018-11-30 | 东莞同济大学研究院 | A kind of production method of the curved surface thin film circuit based on 3D printing technique |
| CN105448799A (en) * | 2015-11-25 | 2016-03-30 | 东莞同济大学研究院 | Curved surface film circuit manufacture method based on laser projection technology |
| CN106601672B (en) * | 2016-11-28 | 2018-10-09 | 西安空间无线电技术研究所 | A method of eliminating thin film circuit cutting-up burr |
| CN109524485A (en) * | 2018-11-28 | 2019-03-26 | 北京铂阳顶荣光伏科技有限公司 | The preparation method of thin-film solar cells |
| CN112259377A (en) * | 2020-09-16 | 2021-01-22 | 大连达利凯普科技股份公司 | Process for solving burr problem after single-layer ceramic capacitor scribing |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6329700B1 (en) * | 1998-10-13 | 2001-12-11 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor wafer and semiconductor device |
| CN103236415A (en) * | 2012-12-31 | 2013-08-07 | 中国电子科技集团公司第四十一研究所 | Thin film hybrid integrated circuit electroplating method |
| CN103298267A (en) * | 2013-03-05 | 2013-09-11 | 深圳市迅捷兴电路技术有限公司 | Manufacturing method for circuit board with surface to be partially processed in thick plate electroplating mode |
-
2013
- 2013-11-21 CN CN201310595685.4A patent/CN103579107B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6329700B1 (en) * | 1998-10-13 | 2001-12-11 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor wafer and semiconductor device |
| CN103236415A (en) * | 2012-12-31 | 2013-08-07 | 中国电子科技集团公司第四十一研究所 | Thin film hybrid integrated circuit electroplating method |
| CN103298267A (en) * | 2013-03-05 | 2013-09-11 | 深圳市迅捷兴电路技术有限公司 | Manufacturing method for circuit board with surface to be partially processed in thick plate electroplating mode |
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| CN103579107A (en) | 2014-02-12 |
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Address after: 233010 No. 726 long march road, Anhui, Bengbu Patentee after: The 41st Institute of CETC Address before: 266555 Qingdao economic and Technological Development Zone, Shandong Xiangjiang Road, No. 98 Patentee before: The 41st Institute of CETC |
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