CN103579107A - Membrane circuit dicing method based on mask electroplating - Google Patents
Membrane circuit dicing method based on mask electroplating Download PDFInfo
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- CN103579107A CN103579107A CN201310595685.4A CN201310595685A CN103579107A CN 103579107 A CN103579107 A CN 103579107A CN 201310595685 A CN201310595685 A CN 201310595685A CN 103579107 A CN103579107 A CN 103579107A
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- cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
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Abstract
The invention discloses a membrane circuit dicing method based on mask electroplating. According to the method, a deposition layer is formed in a well prepared substrate, membrane circuit patterns are formed on the substrate, and then, mask templates used for protecting kerf is well made; masks for protecting the kerf are formed on the deposition layer of the substrate, the membrane circuit patterns are thickened through a mask electroplating technology, the masks are removed, and the kerf only having the deposition layer is reserved; and finally, the kerf position of a workpiece is diced by a grinding wheel dicing saw, and a finished piece is obtained. The metal coating in the kerf position during electroplating is prevented from being thickened due to the action of electroplating insulation action of photoresist in the kerf position, a grinding wheel can directly act on the thinner deposition layer, the metal discharge matters produced during deicing are effectively reduced, the metal burr and membrane shedding phenomena are reduced, the dicing quality of the membrane circuit is improved, and the yield is increased.
Description
Technical field
The present invention relates to a kind of thin film circuit cutting-up method based on mask plating.
Background technology
In the thin film circuit manufacture craft of hybrid integrated circuit, utilizing sand-wheel slice cutting machine to carry out cutting-up to thin film circuit is one of more common thin film circuit sharp processing means.
Thin film circuit generally has sandwich construction, lower laminar substrate adopts such as pottery, jewel, quartz etc. of hard material, upper strata mostly is illuvium and the electrodeposited coating of metal or metallic compound formation, illuvium forms by modes such as evaporation, sputter or chemical vapor depositions, thickness is generally at 20～500nm, electrodeposited coating is to take illuvium to carry out electroplating technology thickening as Seed Layer, its signal main transport layer, and thickness is generally at 1～5um.Mask plating is when photoetching, photoresist directly to be stayed on substrate, directly carries out the technology of parcel plating, and mask plating technology is as a kind of parcel plating technology, relatively ripe, has application comparatively widely in thin film circuit.
The cutting-up method of conventional films circuit is: first workpiece is directly sticked on glass substrate with adhesives such as sealing wax, rosin or seccotines or bonding with blue film, then with sand-wheel slice cutting machine, directly the profile of thin film circuit is carried out to cutting-up.Because the general quality of substrate surface metal level is softer, when using sand-wheel slice cutting machine to carry out cutting-up, easily there is the phenomenons such as burr and rete come off, especially at thicker plated metal layer segment, when follow-up inspection sheet, need the plenty of time to remove burr, affect production efficiency, once and rete come off and directly affect rate of finished products.
At present, although some abrasive machine equipment vendors produce thickness by different emery wheel making technique both at home and abroad, material, hardness, particles of silicon carbide degree, the cutter that the parameters such as shape are different, or by improving constantly the rotating speed of abrasive machine, the self performance such as power and stability, to adapt to the material of cutting-up different materials, improve the discharge capacity of cutter, and improved to a certain extent the quality of cutting-up, yet because film circuit board and signals layer material used is different, the physical propertys such as its hardness are not identical yet, be difficult to take into account the cutting-up of multiple material simultaneously, the phenomenon that cutting edge metallic bur power and rete come off still can occur.In addition, adopt laser scribing incision technology, by superlaser, acting on surface of the work melts or direct gasification workpiece, reach the object of workpiece cutting-up, but the thermal effect due to laser, incision easily forms the problems such as re cast layer, and kerf quality can not show a candle to the quality of emery wheel cutting-up, and this thermal effect also can produce certain influence to the physical property of workpiece signal layer.
Summary of the invention
Burr and rete obscission for easily occurring in conventional films circuit production technique, the present invention proposes a kind of thin film circuit cutting-up method based on mask plating, and it adopts following technical scheme:
A thin film circuit cutting-up method for mask plating, comprises the steps:
A, prepared substrate;
B, on substrate, deposit goes out thin film deposition layer, and produces thin film circuit figure;
C, on the good substrate of deposit even photoresist;
D, make the mask plate for the protection of joint-cutting, and the workpiece of even good photoresist is exposed;
E, produce joint-cutting mask pattern;
F, carry out mask plating;
G, removal mask;
H, employing sand-wheel slice cutting machine, along joint-cutting position cutting-up workpiece, obtain finished parts.
In above-mentioned steps b, go out thin film deposition layer, and go out thin film circuit figure by chemical wet etching by film deposition art deposit on substrate, the deposit mode adopting in described film deposition art comprises sputter, evaporation and chemical vapour deposition (CVD).
In above-mentioned steps e, after exposure, develop and photographic fixing, retain joint-cutting position photoresist mask.
In above-mentioned steps f, utilize electroplating technology thin film circuit figure to be thickeied as plating seed layer take illuvium, form the electrodeposited coating of circuit, joint-cutting position does not form electrodeposited coating.
Advantage of the present invention is:
The present invention forms illuvium and produces thin film circuit figure on ready substrate; then make the mask plate for the protection of joint-cutting; on the illuvium of substrate, be formed for protecting the mask of joint-cutting; and utilize mask plating technique to thicken thin film circuit figure; remove mask and reserve the joint-cutting that only has illuvium, finally utilize sand-wheel slice cutting machine to obtain finished parts along the joint-cutting place cutting-up of workpiece.The present invention is because there is the galvanic insulation effect of photoresist at joint-cutting place, while having avoided electroplating, the joint-cutting place coat of metal thickens, make emery wheel directly act on thinner illuvium, the metal excreta having produced while effectively having reduced cutting-up, thereby reduced the generation of metallic bur power and rete obscission, improved cutting-up quality and the rate of finished products of thin film circuit.
Accompanying drawing explanation
Fig. 1 is the side structure schematic diagram of substrate;
Fig. 2 is the Facad structure schematic diagram of substrate;
Fig. 3 is thin film deposition the side structure schematic diagram that forms circuitous pattern;
Fig. 4 is thin film deposition the Facad structure schematic diagram that forms circuitous pattern;
Fig. 5 is substrate that deposit the is good side structure schematic diagram after even photoresist;
Fig. 6 is substrate that deposit the is good Facad structure schematic diagram after even photoresist;
Fig. 7 carries out photoetching schematic diagram for mask plate being placed in to photoresist top;
Fig. 8 is the structural representation of mask plate I;
Fig. 9 is the structural representation of mask plate II;
Figure 10 is the side structure schematic diagram that joint-cutting mask pattern is made;
The Facad structure schematic diagram of the joint-cutting mask pattern that Figure 11 makes while being employing mask plate I;
The Facad structure schematic diagram of the joint-cutting mask pattern that Figure 12 makes while being employing mask plate II;
Figure 13 is the side structure schematic diagram after mask plating technique;
Figure 14 is the Facad structure schematic diagram after mask plating technique while adopting mask plate I;
Figure 15 is the Facad structure schematic diagram after mask plating technique while adopting mask plate II;
Figure 16 is through removing the side structure schematic diagram after masking process;
Figure 17 is through removing the Facad structure schematic diagram after masking process;
Figure 18 is the side structure schematic diagram of emery wheel cutting-up;
Figure 19 is the Facad structure schematic diagram of finished parts.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention is described in further detail:
In conjunction with shown in Fig. 1 to 19, a kind of thin film circuit cutting-up method based on mask plating, comprises following process step:
A, prepared substrate 1, conventional baseplate material is pottery, jewel, quartz, silicon, GaAs etc., as depicted in figs. 1 and 2;
B, by depositing technics deposit on substrate 1, go out thin film deposition layer 2, and by photoetching, etch thin film circuit figure 3, conventional deposit mode has sputter, evaporation, chemical vapour deposition (CVD) etc., as shown in Figure 3 and Figure 4;
The thickness of illuvium is d1, comprises resistive layer, capacitance electrode layer, dielectric layer, adhesion layer and plating seed layer etc., and plating seed layer is positioned at the superiors;
C, on the good substrate 1 of deposit even photoresist, for making mask layer, prepare; Photoresist 9 can be attached to substrate surface preferably, to the corrosion-free effect of thin film circuit figure, and by plating solution, is not dissolved, and the Thickness Ratio electrodeposited coating of formation is large, as shown in Figure 5 and Figure 6;
D, make the mask plate 4 for the protection of joint-cutting position, and the workpiece of even good photoresist 9 is exposed, as shown in Figure 7, the figure that carries out lithography mask version 4 can be the figure of joint-cutting, mask plate I as shown in Figure 8, or do not affecting the in the situation that thin film circuit figure 3 being electroplated and can suitably widen, right mask plate II shown in Fig. 9;
E, produce joint-cutting mask pattern, after exposure, develop and photographic fixing, retain joint-cutting position photoresist mask 5, as shown in Figure 10, Figure 11 and Figure 12, the thickness of photoresist mask 5 is d3, by photoresist, is formed, and plays insulating effect in mask plating, substrate is had to good tack, and be insoluble in electroplate liquid;
Through the joint-cutting mask pattern of steps d and step e making, can protect preferably joint-cutting not to be plated, and can not affect the electroplating work procedure that needs to electroplate part thin film circuit figure;
F, mask plating, utilize electroplating technology to take illuvium 2 and thin film circuit figure 3 thickeied as plating seed layer, forms the electrodeposited coating 6 of circuit, joint-cutting position is due to by photoresist mask 5 minor insulations, and fail to form electrodeposited coating, the thickness of electrodeposited coating is d2, as shown in Figure 13, Figure 14 and Figure 15; Mask plating technology comparative maturity in the present invention, production cost are little, easy to operate, can directly be integrated in the mask plating technique that forms thin film circuit, the thickness d 1 of illuvium is generally 20～300nm, the thickness of electrodeposited coating is that d2 is generally 1～5um, the thickness of photoresist mask is that d3 is slightly larger than d2, and the thickness magnitude relationship between three is: d3>d2>d1;
G, removal mask, as shown in Figure 16 and Figure 17;
H, employing sand-wheel slice cutting machine 7, along joint-cutting position cutting-up workpiece, as shown in figure 18, obtain finished parts 8, as shown in figure 19.
Because sand-wheel slice cutting machine can carry out cutting-up according to joint-cutting, emery wheel has the discharge capacity of certain metal, substrate and illuvium are had to good cutting-up effect, the present invention avoids the effect of 7 pairs of coats of metal of sand-wheel slice cutting machine, reduced the requirement of workpiece to cutting-up equipment, the controllability of cutting-up equipment is increased.
It should be noted that, to forming the implementation of mask and mask plating, be not limited to the mode of even glue, plate-making, development, etching and the mask plating addressed in step c, d, e, f, can also adopt other alternative that realizes mask plating, as electroplated adhesive tape mask etc.In addition, the present invention also can be applicable in relevant coated element and circuit production technique.
Claims (5)
1. the thin film circuit cutting-up method based on mask plating, is characterized in that comprising the steps:
A, prepared substrate;
B, on substrate, deposit goes out thin film deposition layer, and produces thin film circuit figure;
C, on the good substrate of deposit even photoresist;
D, make the mask plate for the protection of joint-cutting, and the workpiece of even good photoresist is exposed;
E, produce joint-cutting mask pattern;
F, carry out mask plating;
G, removal mask;
H, employing sand-wheel slice cutting machine, along joint-cutting position cutting-up workpiece, obtain finished parts.
2. a kind of thin film circuit cutting-up method based on mask plating according to claim 1, is characterized in that, in described step b, goes out thin film deposition layer, and go out thin film circuit figure by chemical wet etching by film deposition art deposit on substrate.
3. a kind of thin film circuit cutting-up method based on mask plating according to claim 2, is characterized in that, the thin film deposition mode adopting in described depositing technics comprises sputter, evaporation and chemical vapour deposition (CVD).
4. a kind of thin film circuit cutting-up method based on mask plating according to claim 1, is characterized in that, in described step e, develops and photographic fixing after exposure, retains joint-cutting position photoresist mask.
5. a kind of thin film circuit cutting-up method based on mask plating according to claim 1, it is characterized in that, in described step f, utilize electroplating technology thin film circuit figure to be thickeied as plating seed layer take illuvium, the electrodeposited coating that forms circuit, joint-cutting position does not form electrodeposited coating.
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| CN201310595685.4A CN103579107B (en) | 2013-11-21 | 2013-11-21 | A kind of thin film circuit cutting-up method based on mask plating |
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| CN201310595685.4A CN103579107B (en) | 2013-11-21 | 2013-11-21 | A kind of thin film circuit cutting-up method based on mask plating |
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| CN103579107A true CN103579107A (en) | 2014-02-12 |
| CN103579107B CN103579107B (en) | 2015-10-14 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105448800A (en) * | 2015-11-25 | 2016-03-30 | 东莞同济大学研究院 | Manufacturing method for curved surface film circuit based on 3D printing technology |
| CN105448799A (en) * | 2015-11-25 | 2016-03-30 | 东莞同济大学研究院 | Curved surface film circuit manufacture method based on laser projection technology |
| CN106601672A (en) * | 2016-11-28 | 2017-04-26 | 西安空间无线电技术研究所 | Method for eliminating cutting burrs of film circuit |
| CN109524485A (en) * | 2018-11-28 | 2019-03-26 | 北京铂阳顶荣光伏科技有限公司 | The preparation method of thin-film solar cells |
| CN112259377A (en) * | 2020-09-16 | 2021-01-22 | 大连达利凯普科技股份公司 | Process for solving burr problem after single-layer ceramic capacitor scribing |
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| US6329700B1 (en) * | 1998-10-13 | 2001-12-11 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor wafer and semiconductor device |
| CN103236415A (en) * | 2012-12-31 | 2013-08-07 | 中国电子科技集团公司第四十一研究所 | Thin film hybrid integrated circuit electroplating method |
| CN103298267A (en) * | 2013-03-05 | 2013-09-11 | 深圳市迅捷兴电路技术有限公司 | Manufacturing method for circuit board with surface to be partially processed in thick plate electroplating mode |
-
2013
- 2013-11-21 CN CN201310595685.4A patent/CN103579107B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6329700B1 (en) * | 1998-10-13 | 2001-12-11 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor wafer and semiconductor device |
| CN103236415A (en) * | 2012-12-31 | 2013-08-07 | 中国电子科技集团公司第四十一研究所 | Thin film hybrid integrated circuit electroplating method |
| CN103298267A (en) * | 2013-03-05 | 2013-09-11 | 深圳市迅捷兴电路技术有限公司 | Manufacturing method for circuit board with surface to be partially processed in thick plate electroplating mode |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105448800A (en) * | 2015-11-25 | 2016-03-30 | 东莞同济大学研究院 | Manufacturing method for curved surface film circuit based on 3D printing technology |
| CN105448799A (en) * | 2015-11-25 | 2016-03-30 | 东莞同济大学研究院 | Curved surface film circuit manufacture method based on laser projection technology |
| CN105448800B (en) * | 2015-11-25 | 2018-11-30 | 东莞同济大学研究院 | A kind of production method of the curved surface thin film circuit based on 3D printing technique |
| CN106601672A (en) * | 2016-11-28 | 2017-04-26 | 西安空间无线电技术研究所 | Method for eliminating cutting burrs of film circuit |
| CN106601672B (en) * | 2016-11-28 | 2018-10-09 | 西安空间无线电技术研究所 | A method of eliminating thin film circuit cutting-up burr |
| CN109524485A (en) * | 2018-11-28 | 2019-03-26 | 北京铂阳顶荣光伏科技有限公司 | The preparation method of thin-film solar cells |
| CN112259377A (en) * | 2020-09-16 | 2021-01-22 | 大连达利凯普科技股份公司 | Process for solving burr problem after single-layer ceramic capacitor scribing |
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| CN103579107B (en) | 2015-10-14 |
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