CN103060920A - High-precision and pollution-free semiconductor wafer cleavage method - Google Patents
High-precision and pollution-free semiconductor wafer cleavage method Download PDFInfo
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- CN103060920A CN103060920A CN2013100016471A CN201310001647A CN103060920A CN 103060920 A CN103060920 A CN 103060920A CN 2013100016471 A CN2013100016471 A CN 2013100016471A CN 201310001647 A CN201310001647 A CN 201310001647A CN 103060920 A CN103060920 A CN 103060920A
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Abstract
The invention discloses a high-precision and pollution-free semiconductor wafer cleavage method. The method comprises the following steps: spinning photoresist on the surface of a semiconductor wafer to prepare a covering film; photoetching a strip-shaped run-through corrosion area on the covering film by using a photoetching machine; performing chemical corrosion in the corrosion area by using corrosive liquid to form a V-shaped cleavage slot; taking out the semiconductor wafer from the corrosive liquid and removing the covering film from the surface of the semiconductor wafer; and segmenting the semiconductor wafer along the V-shaped cleavage slot and finishing semiconductor wafer cleavage. The V-shaped cleavage slot is manufactured by a photoetching and corrosion mode, so the position precision of the V-shaped cleavage slot can be guaranteed to be within 1 micron, and the precision of the cleaved semiconductor wafer is guaranteed to be within 1 micron. The V-shaped cleavage slot is manufactured by the chemical corrosion method, so no substrate material scrap is generated, the surface of the cleaved semiconductor wafer is guaranteed to be clean, and the quality and the finished product rate of chips are improved.
Description
Technical field
The present invention relates to the semiconductor wafer manufacture technology field, be specifically related to the free of contamination semiconductor wafer cleavage of a kind of high precision method.
Background technology
In the prior art of making semiconductor wafer, comprising a step is that the semiconductor wafer cleavage is divided into the one single chip of tens thousand of sizes between 200 μ m～2000 μ m.Present common way is to take the first cutting-up secant on semiconductor wafer substrate with diamond tool or emery wheel, and then along the line of cut separating chips, the method is similar to the method for cutting glass plate.But there is following shortcoming in this existing method with diamond tool or the auxiliary separating chips of emery wheel cutting-up secant:
Precision is low.With diamond tool or emery wheel cutting-up secant, the live width that marks is generally between 10 μ m-15 μ m.When cutting apart along line, the wafer separated point is selected in the live width of this 10 μ m-15 μ m at random, causes last wafer cleavage precision not high.The general above error of 5 μ m that exists of size between each chip that cleavage goes out.
Pollute large.When diamond tool or emery wheel cutting-up secant, owing to be that physical method acts on the semiconductor wafer substrate, substrate material is artificially damaged, can produce the indiscoverable small substrate material chip of a lot of naked eyes.These detrital grain sizes are difficult to cleaning only about 1 μ m-10 μ m, have a strong impact on the semiconductor die tablet quality after the cleavage.
Summary of the invention
For problems of the prior art, the present invention proposes the free of contamination semiconductor wafer cleavage of a kind of high precision method.
The present invention proposes the free of contamination semiconductor wafer cleavage of a kind of high precision method, comprises following step:
A: at the surperficial spin coating photoresist material of semiconductor wafer, make the shielding film;
B: adopt the method for lithography machine photoetching, produce the corrosion area that strip connects at the shielding film;
C: adopt corrosive fluid to carry out chemical corrosion at corrosion area, form V-type solution trunking;
D: from corrosive fluid, take out semiconductor wafer, remove the shielding film of semiconductor wafer surface;
F: semiconductor wafer is separated along V-type solution trunking, finish the semiconductor wafer cleavage.
The advantage that the present invention has is:
High precision.Make V-type solution trunking owing to take the mode of photoetching and corrosion, the positional precision that can guarantee V-type solution trunking refers to make V-type solution trunking in 1 this precision of μ m(, the limit of error that exists when making it to be in the predetermined position on the semiconductor wafer) in, guaranteed that namely semiconductor wafer size accuracy that last cleavage goes out is in 1 μ m.
Pollution-free.Owing to adopt the method for chemical corrosion to make V-type solution trunking, can not produce any substrate material chip.Guarantee the semiconductor wafer surface cleaning that cleavage goes out, improved chip quality and yield rate.
Description of drawings
Fig. 1 is the schematic flow sheet that the present invention proposes the free of contamination semiconductor wafer cleavage of a kind of high precision method;
Fig. 2 is the synoptic diagram for the treatment of the semiconductor wafer of cleavage;
Fig. 3 is the semiconductor wafer synoptic diagram that the surface is manufactured with the shielding film;
Fig. 4 is the semiconductor wafer synoptic diagram after light system carry out in the surface;
Fig. 5 is the semiconductor wafer synoptic diagram of surface corrosion place V-type solution trunking;
Fig. 6 is the synoptic diagram that removes the semiconductor wafer of photoresist material mask;
Fig. 7 is the synoptic diagram of semiconductor wafer of riving;
Fig. 8 is the synoptic diagram of the semiconductor wafer after the cleavage.
Among the figure: the 1-semiconductor wafer; The 2-photoresist material; The 3-chopper; The 4-back-up block.
Embodiment
The invention will be further described below in conjunction with the drawings and specific embodiments, can be implemented so that those skilled in the art can better understand the present invention also, but illustrated embodiment is not as a limitation of the invention.
The present invention proposes the free of contamination semiconductor wafer cleavage of a kind of high precision method, as shown in Figure 1, adopt the method for chemical corrosion, cleave region on semiconductor wafer 1 erodes away V-type solution trunking, then the back side relative position at V-type solution trunking knocks, and makes semiconductor wafer 1 separated along V-type solution trunking.Such as Fig. 2-shown in Figure 8, specifically comprise following step:
Step 1: as shown in Figure 2, will prepare semiconductor wafer 1 cleaning of cleavage, and dry up with the nitrogen of dried and clean.
Step 2: adopt photoresist material 2 to make the shielding film in the front of semiconductor wafer 1, this photoresist material 2 adopts common positive photoresist, such as the RZJ-304 positive photoresist of Suzhou Ruihong Electronic Chemical Product Co., Ltd.'s production or the S1813 positive photoresist of Shanghai ROHM AND HAAS chemical industry company limited production etc., as shown in Figure 3, adopt the mode gluing of spreadometer spin coating, gauge control is at 1 μ m ~ 2 μ m.
Step 3: the method that adopts the lithography machine photoetching, on the shielding film of photoresist material 2, carry out photoetching along the zone of required cleavage and remove photoresist, and then produce the glue-free zone of the perforation of fine strip shape at photoresist material 2 shielding films, as shown in Figure 4, and then form strip straight line corrosion area.The width of this corrosion area is generally 4% ~ 6% of semiconductor wafer 1 thickness.For example, be on the semiconductor wafer 1 of 100 μ m at thickness, needing the width of making corrosion area is 4 μ m ~ 6 μ m.
Step 4: the method with chemical corrosion is corroded at corrosion area, forms V-type solution trunking.With saturated bromine water, phosphoric acid and pure water configuration corrosive fluid, volume ratio is 2:1:15.Semiconductor wafer 1 after the photoetching is immersed in the corrosive fluid, and etching time is 10 minutes ~ 20 minutes.Erode away the solution trunking that side view is V-type at the strip corrosion area, as shown in Figure 5.Because the lattice of semiconductor wafer 1 exists level and vertical directivity, in the time of chemical corrosion, this corrosive fluid corrodes along lattice direction.Semiconductor wafer 1 in the speed that is corroded of vertical direction greater than the speed that is corroded of horizontal direction, so can form the erosion grooves that side view is V-type.Other zones in the front of semiconductor wafer 1 can not be corroded the impact of liquid because the protection of the shielding film of photoresist material 2 is arranged.
Step 5: after eroding away V-type solution trunking, from corrosive fluid, take out semiconductor wafer 1, clean up, as shown in Figure 6.Then the methyl-2-pyrrolidone NMP(massfraction of putting into temperature and be 70 ℃ ~ 80 ℃ is 100%) or 70 ℃ ~ 80 ℃ acetone soln (massfraction is 100%) soak more than 15 minutes, thereby remove the shielding film of photoresist material 2 preparations.
Step 6: with semiconductor wafer 1 conversely, be placed on two back-up blocks 4, as shown in Figure 7.Reserve the slit of one fixed width between two back-up blocks 4.V-type solution trunking is in the centre in slit.Aim at V-type solution trunking from the back side, knock with chopper 3.Semiconductor wafer 1 will along V-type solution trunking naturally separately, as shown in Figure 8, be finished semiconductor wafer 1 cleavage like this.
The above embodiment is the preferred embodiment that proves absolutely that the present invention lifts, and protection scope of the present invention is not limited to this.Being equal to that those skilled in the art do on basis of the present invention substitutes or conversion, all within protection scope of the present invention.Protection scope of the present invention is as the criterion with claims.
Claims (7)
1. the free of contamination semiconductor wafer cleavage of high precision method is characterized in that: comprise following step:
A: at the surperficial spin coating photoresist material of semiconductor wafer, make the shielding film;
B: adopt the method for lithography machine photoetching, produce the corrosion area that strip connects at the shielding film;
C: adopt corrosive fluid to carry out chemical corrosion at corrosion area, form V-type solution trunking;
D: from corrosive fluid, take out semiconductor wafer, remove the shielding film of semiconductor wafer surface;
F: semiconductor wafer is separated along V-type solution trunking, finish the semiconductor wafer cleavage.
2. the free of contamination semiconductor wafer cleavage of high precision according to claim 1 method is characterized in that: also comprise cleaning semiconductor chip and dry up surperficial step with dry nitrogen before carrying out steps A.
3. the free of contamination semiconductor wafer cleavage of high precision according to claim 1 method is characterized in that: the photoresist material described in the described steps A adopts positive photoresist, and the thickness of described shielding film is 1 μ m ~ 2 μ m.
4. the free of contamination semiconductor wafer cleavage of high precision according to claim 1 method, it is characterized in that: the width of the corrosion area described in the described step B is 4% ~ 6% of semiconductor wafer thickness.
5. the free of contamination semiconductor wafer cleavage of high precision according to claim 1 method, it is characterized in that: the corrosive fluid described in the described step C is the mixture of saturated bromine water, phosphoric acid, water, and wherein the volume ratio of saturated bromine water, phosphoric acid, water is the mixed solution of 2:1:15; The chemical corrosion time is 10 minutes～20 minutes.
6. the free of contamination semiconductor wafer cleavage of high precision according to claim 1 method, it is characterized in that: remove the shielding film among the described step D and be specially that semiconductor wafer is soaked in temperature is in 70 ℃ ~ 80 ℃ the methyl-2-pyrrolidone or acetone, soak more than 15 minutes.
7. the free of contamination semiconductor wafer cleavage of high precision according to claim 1 method, it is characterized in that: described step F is specially: semiconductor wafer is placed on two back-up blocks, V-type solution trunking is placed down, and between two back-up blocks, reserve the slit, make V-type solution trunking be in the centre in slit, aim at V-type solution trunking from the back side, knock with chopper, make such semiconductor die sector-meeting along V-type solution trunking separately, finish the semiconductor wafer cleavage.
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| CN2013100016471A CN103060920A (en) | 2013-01-05 | 2013-01-05 | High-precision and pollution-free semiconductor wafer cleavage method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103674832A (en) * | 2013-11-29 | 2014-03-26 | 上海华力微电子有限公司 | Characterization method of interlayer adhesion performance of multi-layer film and preparation method of adhesion performance test sample |
| CN113345838A (en) * | 2021-08-05 | 2021-09-03 | 度亘激光技术（苏州）有限公司 | Semiconductor device cleavage method |
| CN114161591A (en) * | 2021-12-03 | 2022-03-11 | 江西省纳米技术研究院 | Nondestructive cleavage method for semiconductor chip |
| CN115376904A (en) * | 2022-08-18 | 2022-11-22 | 武汉敏芯半导体股份有限公司 | Cleavage method of semiconductor optical chip |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103674832A (en) * | 2013-11-29 | 2014-03-26 | 上海华力微电子有限公司 | Characterization method of interlayer adhesion performance of multi-layer film and preparation method of adhesion performance test sample |
| CN113345838A (en) * | 2021-08-05 | 2021-09-03 | 度亘激光技术（苏州）有限公司 | Semiconductor device cleavage method |
| CN114161591A (en) * | 2021-12-03 | 2022-03-11 | 江西省纳米技术研究院 | Nondestructive cleavage method for semiconductor chip |
| CN115376904A (en) * | 2022-08-18 | 2022-11-22 | 武汉敏芯半导体股份有限公司 | Cleavage method of semiconductor optical chip |
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Application publication date: 20130424 |