CN109659230A - The semiconductor processing method of double-sided glass terminal - Google Patents
The semiconductor processing method of double-sided glass terminal Download PDFInfo
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- CN109659230A CN109659230A CN201811528793.9A CN201811528793A CN109659230A CN 109659230 A CN109659230 A CN 109659230A CN 201811528793 A CN201811528793 A CN 201811528793A CN 109659230 A CN109659230 A CN 109659230A
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- layer
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- glassy layer
- corrosion
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
Abstract
The present invention relates to semiconductor processing technology fields, disclose a kind of semiconductor processing method of double-sided glass terminal, form glassy layer including the terminal in chip；Process is performed etching to glassy layer, to form scribing slot on glassy layer: at least covering opaque dielectric layer on the glassy layer of chip；Photoresist layer is coated on opaque dielectric layer；Mask exposure is carried out to photoresist layer；Opaque dielectric layer is corroded, by the exposed to corrosion sites of glassy layer；To corroding to corrosion sites for glassy layer, to form scribing slot on glassy layer；Stripping photolithography glue-line and opaque dielectric layer.The present invention compares the mode of existing laser machine glass-cutting, and at low cost and efficiency increases substantially.
Description
Technical field
The present invention relates to semiconductor processing technology fields, more particularly, to a kind of semiconductor machining side of double-sided glass terminal
Method.
Background technique
The manufacture of dual stage face thyristor has the characteristics that high, the opposite process of voltage is short, at low cost, and the following difficult point is
The scribing problem of double-sided glass.
Specifically, dual stage face thyristor is with such a terminal structure: in semiconductor chip edge corrosion deactivation slot, and
Relatively thin medium and relatively thick glass are filled in deactivation slot, and deactivation slot corrodes one on the two sides of semiconductor chip respectively
It is a；Adjacent devices can share same glassivation slot structure terminal.The width of general deactivation slot glass is 200-1000um, thickness
For 10-100um.Due to glass poor toughness, easy fragmentation, similar to the semiconductor of double-sided glass terminal as the thyristor of dual stage face
Product is in the operation for directly carrying out scribing, the problems such as being also easy to produce crackle, the chipping of chip.
It is in the industry usually to use laser machine glass-cutting, then again currently, being directed to the semiconductor product of double-sided glass terminal
Technique as scribing is carried out to be produced, although a degree of crackle for reducing chip of this technique energy, chipping problem,
This technique production cycle is long, at high cost.
Summary of the invention
The purpose of the present invention is to provide a kind of semiconductor processing methods of double-sided glass terminal, to solve in the prior art
The semiconductor product of existing double-sided glass terminal carries out glass-cutting using laser machine, and the technique production cycle is long, at high cost
Technical problem.
Based on above-mentioned purpose, the present invention provides a kind of semiconductor processing method of double-sided glass terminal, the method packets
It includes:
Glassy layer is formed in the terminal of chip；
Process is performed etching to glassy layer, to form scribing slot on glassy layer:
Opaque dielectric layer is at least covered on the glassy layer of chip；
Photoresist layer is coated on opaque dielectric layer；
Mask exposure is carried out to photoresist layer；
Opaque dielectric layer is corroded, by the exposed to corrosion sites of glassy layer；
To corroding to corrosion sites for glassy layer, to form scribing slot on glassy layer；
Stripping photolithography glue-line and opaque dielectric layer.
Further, the semiconductor of the double-sided glass terminal is dual stage face thyristor；
The step of terminal in chip forms glassy layer are as follows:
Go out deactivation slot in the edge corrosion of chip；
It is fired in deactivation slot and forms glassy layer.
Further, the opaque dielectric layer is aluminium layer；
The aluminium layer is covered on chip by way of deposit, and the aluminium layer covers whole chip.
Further, the photoresist of the photoresist layer is the negative photoresist of 150CP-450CP viscosity.
Further, described that corrosion is carried out using the completion of dielectric corrosion liquid, the dielectric corrosion liquid to opaque dielectric layer
It is not less than 76% phosphoric acid for concentration.
Further, described corrosion is carried out to corrosion sites to glassy layer to pass through glass erosion liquid completion, the glass
Corrosive liquid is greater than the corrosion rate to opaque dielectric layer to the corrosion rate of glassy layer.
Further, the glass erosion liquid is the mixed liquor of BOE solution and hydrochloric acid solution, wherein the fluorination of BOE solution
The content of ammonium is 29.6%-30.4%, the content of hydrogen fluoride is 5.75%-6.25%；The concentration of hydrochloric acid is 36%-38%；
The volume ratio of BOE solution and hydrochloric acid solution is 10:1.
Further, the photoresist layer and opaque dielectric layer are removed by stripper；
The stripper is the sulfuric acid that concentration is not less than 98%.
Further, after performing etching process to glassy layer, the method also includes:
The deposited metal on chip；
Photoetching is carried out to metal layer；
The chip covering alloy layer that metal layer lithography is completed；
Functional test is carried out to chip, whether preset requirement is met with detection chip；
To the chip for meeting preset requirement, scribing is carried out by scribing groove location.
Further, the depth of the scribing slot is 20um-80um, width 40-100um, and glassy layer corresponds to scribing slot
The remaining thickness of bottom is 10um-50um.
Compared with prior art, the invention has the benefit that
The semiconductor processing method of double-sided glass terminal provided by the invention includes: the terminal formation glassy layer in chip；
Process is performed etching to glassy layer, to form scribing slot on glassy layer.The semiconductor of double-sided glass terminal of the present invention adds
Work method on glassy layer by covering opaque dielectric layer, so as to carry out the processing of scribing slot to glass by etching technics
It handles, after processing scribing slot on glassy layer, final scribing can be cut on the basis of scribing slot, avoided and directly existed
The problem of scribing is easy to cause die crack and chipping is carried out on glassy layer；Meanwhile the semiconductor of double-sided glass terminal of the present invention
Processing method compares the mode of existing laser machine glass-cutting, and at low cost and efficiency increases substantially.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is the basic system of two-sided thyristor；
Fig. 2 is the schematic diagram to form the shared glassivation slot terminal of adjacent two-sided thyristor chip of glassy layer；
Fig. 3 is the schematic diagram that two-sided thyristor chip covers opaque dielectric layer；
Fig. 4 is that the glassy layer of two-sided thyristor chip corrodes the schematic diagram of scribing slot out；
Fig. 5 is the schematic diagram that two-sided thyristor chip removes opaque dielectric layer and photoresist layer；
Fig. 6 is the flow diagram of the semiconductor processing method of double-sided glass of embodiment of the present invention terminal.
Icon: the two-sided thyristor chip of 1-；The opaque dielectric layer of 2-；3- glassy layer；4- scribing slot.
Specific embodiment
Technical solution of the present invention is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that such as occur term " center ", "upper", "lower", "left", "right",
"vertical", "horizontal", "inner", "outside" etc., the orientation or positional relationship of instruction are that orientation based on the figure or position are closed
System, is merely for convenience of description of the present invention and simplification of the description, rather than the device or element of indication or suggestion meaning must have
Specific orientation is constructed and operated in a specific orientation, therefore is not considered as limiting the invention.In addition, such as there is art
Language " first ", " second ", " third " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " peace such as occur
Dress ", " connected ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integrally
Connection；It can be mechanical connection, be also possible to be electrically connected；Can be directly connected, can also indirectly connected through an intermediary,
It can be the connection inside two elements.For the ordinary skill in the art, above-mentioned art can be understood with concrete condition
The concrete meaning of language in the present invention.
The semiconductor processing method of double-sided glass terminal of the present invention can be used for the glass scribing of semiconductor fabrication processes, no
It is limited to have in the processing technology of two-sided thyristor.For the convenience of description, the embodiment of the present invention is with the processing of two-sided thyristor
For be illustrated.
Fig. 1 is the basic structure schematic diagram of two-sided thyristor；Shown in Fig. 2 in processing technology, two two-sided brilliant locks
Tube chip 1 shares deactivation slot, namely corrodes between two adjacent two-sided thyristor chips 1 the blunt of substantially dome-type out
Change slot, the later period cuts apart by the deactivation slot of the substantially dome-type, to form independent two-sided thyristor.
Embodiment one
It is shown in Figure 6, a kind of semiconductor processing method of double-sided glass terminal is present embodiments provided, the method is such as
Under.
Step S1: glassy layer is formed in the terminal of chip.
When semiconductor for double-sided glass terminal is dual stage face thyristor, which is specifically, using the prior art
Dual stage face thyristor manufacturing process flow, in dual stage face, the edge corrosion of thyristor chip 1 goes out deactivation slot；It is fired in deactivation slot
Form glassy layer 3.Dual stage face thyristor chip is substantially as shown in Figure 2 at this time.
Step S2: performing etching process to glassy layer, to form scribing slot on glassy layer.Specific step S2's
Realization process are as follows:
S201: opaque dielectric layer 2 is at least covered on the glassy layer of chip.
The main function of opaque dielectric layer 2 is the mask layer as glassy layer 3, is not belonging to the structure of device, must be complete
It is removed after being acted at mask.So opaque dielectric layer 2 except require it is opaque in addition to, also require be easy to remove from glass, and shell
From when not will cause the destructions of chip surface other structures.Aluminium layer is preferably used in the present embodiment.Specifically, aluminium layer passes through deposit
Mode be covered on chip, in order to easy to process, aluminium layer can be deposited on chip entirety chip structure.Dual stage face thyristor core
After the opaque dielectric layer of piece covering as shown in Figure 3.
In general, the terminal glass layer design width in the deactivation slot of dual stage face thyristor is 200um-1000um, thickness
For 10-100um.The reasons such as the reflection of the good translucency of glass and light coat photoresist directly on glass and carry out photoetching, can send out
The mistake exposure of raw greater probability, leads to not that photoresist is directly used to carry out photoetching and corrosion to glass.So in advance in glassy layer
The upper opaque dielectric layer of deposit, re-coating photoresist carry out photoetching, can solve accidentally exposure problems.
S202: photoresist layer is coated on opaque dielectric layer.Since the thickness and width of deactivation slot are larger, opaque Jie
The covering of matter layer and photoresist layer influences pattern little.The negative photoresist of ordinary circumstance selection 150CP-450CP viscosity
Complete the photoresist coating on opaque dielectric layer.
S203: mask exposure is carried out to photoresist layer.For the property of negative photoresist, mask plate used in the step
The position to the corresponding opaque dielectric layer of corrosion sites of glassy layer should be covered.That is, mask plate corresponds to glass
Layer is lighttight to corrosion sites.
S204: after the exposure for completing opaque dielectric layer 2, corroding opaque dielectric layer 2, by glassy layer to
Corrosion sites are exposed.It is understood that glassy layer 3 to corrosion sites namely be ultimately formed the position of scribing slot 4, generally
For, corresponding two neighboring dual stage face thyristor chip 1 shares the form of deactivation slot, substantially in the symmetrical centre bit of deactivation slot
It sets.The corrosion of opaque dielectric layer 2 can be carried out using dielectric corrosion liquid, and dielectric corrosion liquid can be dense not less than 76% for concentration
Phosphoric acid.
It is understood that after opaque dielectric layer etches, at this point, glassy layer 3 to corrosion sites it is exposed
Outside, and the opaque dielectric layer and photoresist layer of other positions still exist, these deposit still existing impermeable optical medium
Layer and photoresist layer protect other positions when glassy layer corrodes.
S205: to corroding to corrosion sites for glassy layer, to form scribing slot 4 on glassy layer 3.Specifically, can
The etching process of the step is carried out using glass erosion liquid.
Step S204 completes mask layer of the opaque dielectric layer of corrosion as glassy layer, and glass erosion liquid can be molten for BOE
The mixed liquor of liquid (ammonium fluoride etchant) and hydrochloric acid solution, wherein the content of the ammonium fluoride of BOE solution be 29.6%-30.4%,
The content of hydrogen fluoride is 5.75%-6.25%；The concentration of hydrochloric acid is 36%-38%, and the volume ratio of BOE solution and hydrochloric acid solution is
10:1.The etching process of the step requires in above-mentioned glass erosion liquid, and the two sides of dual stage face thyristor is (above and below shown in Fig. 4
Two sides) glassy layer can corrode simultaneously, and glass erosion liquid should be much smaller that the corruption to glass to the corrosion rate of opaque dielectric layer
Lose rate.The corrosion depth of glassy layer is determined by combined factors such as chip thickness, passivation groove depth, scribing effects, and two-sided glass
The corrosion depth of glass and chip thickness and passivation groove depth are closely related, and the too deep fragment rate of corrosion depth increases, and corrode shallow core
Piece will appear chipping, crackle.Specifically, scribing slot is formed after glassy layer corrosion, Product Status such as Fig. 4 institute after the completion of the step
Show, general glass scribing groove depth is 20um-80um, and width 40um-100um, the remaining thickness of glass is (on the inside of glassy layer
Thickness apart from scribing trench bottom) it is 10um-50um.
Step S206: stripping photolithography glue-line and opaque dielectric layer, the Product Status after the completion of removing are as shown in Figure 5.
Photoresist layer and opaque dielectric layer can be used stripper and carry out that once-through operation is synchronous to remove in the step, and specific stripper can
It is not less than 98% concentrated sulfuric acid using concentration.
Complete step S2 after, the semiconductor of general double-sided glass terminal also needs to carry out other processing technologys, finally just into
The scribing of row deactivation slot is cut；Such as it also needs to be sequentially completed following step after completing step S2 for dual stage face thyristor:
The deposited metal on chip；Photoetching is carried out to metal layer；The chip covering alloy layer that metal layer lithography is completed；To chip into
Whether row functional test meets preset requirement with detection chip.Finally only to the dual stage face thyristor chip for meeting preset requirement
Scribing is carried out, specific scribing processes, which can be, enters knife at the center of scribing slot for saw blade, adjusts revolving speed and the feed of saw blade
Speed is finally completed the dicing operation of chip.
The semiconductor processing method of the present embodiment double-sided glass terminal causes when being directed to the passivating structure scribing of dual stage surface glass
The problems such as chip chipping, crackle and be suggested, can complete by the method for the invention dual stage surface glass passivating structure chip draw
Piece operation, compared with laser machine glass-cutting adds scribing process in the industry, with low, the high-efficient advantage of production cost.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (10)
1. a kind of semiconductor processing method of double-sided glass terminal, which is characterized in that the described method includes:
Glassy layer is formed in the terminal of chip；
Process is performed etching to glassy layer, to form scribing slot on glassy layer:
Opaque dielectric layer is at least covered on the glassy layer of chip；
Photoresist layer is coated on opaque dielectric layer；
Mask exposure is carried out to photoresist layer；
Opaque dielectric layer is corroded, by the exposed to corrosion sites of glassy layer；
To corroding to corrosion sites for glassy layer, to form scribing slot on glassy layer；
Stripping photolithography glue-line and opaque dielectric layer.
2. the semiconductor processing method of double-sided glass terminal according to claim 1, which is characterized in that the double-sided glass
The semiconductor of terminal is dual stage face thyristor；
The step of terminal in chip forms glassy layer are as follows:
Go out deactivation slot in the edge corrosion of chip；
It is fired in deactivation slot and forms glassy layer.
3. the semiconductor processing method of double-sided glass terminal according to claim 1 or 2, which is characterized in that described impermeable
Optical medium layer is aluminium layer；
The aluminium layer is covered on chip by way of deposit, and the aluminium layer covers whole chip.
4. the semiconductor processing method of double-sided glass terminal according to claim 3, which is characterized in that the photoresist layer
Photoresist be 150CP-450CP viscosity negative photoresist.
5. the semiconductor processing method of double-sided glass terminal according to claim 3, which is characterized in that described to opaque
Dielectric layer is carried out corrosion and is completed using dielectric corrosion liquid, and the dielectric corrosion liquid is the phosphoric acid that concentration is not less than 76%.
6. the semiconductor processing method of double-sided glass terminal according to claim 5, which is characterized in that described to glassy layer
Carry out corrosion to corrosion sites and completed by glass erosion liquid, the glass erosion liquid to the corrosion rate of glassy layer greater than pair
The corrosion rate of opaque dielectric layer.
7. the semiconductor processing method of double-sided glass terminal according to claim 6, which is characterized in that the glass corrosion
Liquid is the mixed liquor of BOE solution and hydrochloric acid solution, wherein the content of the ammonium fluoride of BOE solution is 29.6%-30.4%, is fluorinated
The content of hydrogen is 5.75%-6.25%；The concentration of hydrochloric acid is 36%-38%；
The volume ratio of BOE solution and hydrochloric acid solution is 10:1.
8. the semiconductor processing method of double-sided glass terminal according to claim 4, which is characterized in that the photoresist layer
And opaque dielectric layer is removed by stripper；
The stripper is the sulfuric acid that concentration is not less than 98%.
9. the semiconductor processing method of double-sided glass terminal according to claim 2, which is characterized in that glassy layer into
After the processing of row etching technics, the method also includes:
The deposited metal on chip；
Photoetching is carried out to metal layer；
The chip covering alloy layer that metal layer lithography is completed；
Functional test is carried out to chip, whether preset requirement is met with detection chip；
To the chip for meeting preset requirement, scribing is carried out by scribing groove location.
10. the semiconductor processing method of double-sided glass terminal according to claim 1, which is characterized in that the scribing slot
Depth be 20um-80um, width 40-100um, glassy layer correspond to the remaining thickness of scribing trench bottom as 10um-50um.
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| CN201811528793.9A CN109659230A (en) | 2018-12-13 | 2018-12-13 | The semiconductor processing method of double-sided glass terminal |
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| CN110473823A (en) * | 2019-06-28 | 2019-11-19 | 福建华佳彩有限公司 | A kind of preparation method of frit glue pattern |
| CN110890283A (en) * | 2019-11-29 | 2020-03-17 | 扬州杰利半导体有限公司 | Improved method for passivating diode glass |
| CN111584617A (en) * | 2020-06-02 | 2020-08-25 | 吉林华微电子股份有限公司 | Planar silicon controlled rectifier device and manufacturing method thereof |
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Application publication date: 20190419 |