CN101051607A - Method for making super thin two-way trigger tube - Google Patents
Method for making super thin two-way trigger tube Download PDFInfo
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- CN101051607A CN101051607A CN 200710014588 CN200710014588A CN101051607A CN 101051607 A CN101051607 A CN 101051607A CN 200710014588 CN200710014588 CN 200710014588 CN 200710014588 A CN200710014588 A CN 200710014588A CN 101051607 A CN101051607 A CN 101051607A
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- way trigger
- silicon chip
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Abstract
The invention includes following steps for treating silicon chip: acid cleaning, rinsing, diffusing, carving groove, passivating glass, plating, alloying, plating, testing, scribing, and splitting. In the acid cleaning step, silicon chip is eroded to 100+-5 micro. Solving issues of ultrathin, and bidirectional triggers, the invention possesses advantages of high yield, simplified technique and equipment so as to meet requirement of market.
Description
(1) technical field
The present invention relates to the manufacture method of a kind of manufacture method of trigger tube, particularly a kind of super thin two-way trigger tube.
(2) background technology
The integral thickness of super thin two-way trigger tube is 100 μ m ± 5 μ m, present manufacture method employing to 100 μ m ± 5 μ m, after the grinding is sandblasted silicon chip grinding again, is polished → clean → spread → cutting → glassivation → plating → alloy → plating → test → scribing → sliver; Because frangible in the silicon chip grinding process, rate of finished products is not high, this manufacture method needs the shortcoming that equipment is many and processing step is many in addition.
(3) summary of the invention
The technical problem to be solved in the present invention is: the manufacture method that a kind of rate of finished products height, the simple super thin two-way trigger tube of technology are provided.
In order to solve the problems of the technologies described above, the present invention includes following steps: with silicon chip pickling → cleaning → diffusion → cutting → glassivation → plating → alloy → plating → test → scribing → sliver; Silicon slice corrosion is to 100 μ m ± 5 μ m in the acid pickling step.
In order to improve rate of finished products, described pickling comprises that step has (1) part complex acid: H by volume
2SO
4: HNO
3: CH
3COOH: HF=9: 9: 12: 4, (2) corrosion: silicon chip is put into the acid for preparing corrode 15min ± 1min.
In order to solve brightless, the flecked problem of silicon chip, described pickling also comprises that step (3) is H in parts by volume to the silicon chip after corroding
2O: H
2O
2: NH
4OH=5: boil 10min in 2: 1 the solution, dry towards cold deionized water 30min (4).
In order to improve rate of finished products, glassivation adopts four rod boats vertically to stand up the method for sintering, and cutting adopts infrared ray to aim at the double-sided exposure mask aligner, and biquartz pipe diffusion technology is adopted in diffusion.
The invention has the beneficial effects as follows: the present invention has solved ultra-thin, two-way triggering problem effectively, and the rate of finished products height, has simplified technology and equipment, has satisfied the needs in market.
(4) description of drawings
Fig. 1 is the sectional structure schematic diagram of super thin two-way trigger tube; Fig. 2 is the vertical view of Fig. 1;
Among the figure: 1, electrode, 2, diffusion layer, 3, PN junction, 4, silicon substrate, 5, glass passivation layer.
(5) embodiment
This specific embodiment is the method for a kind of shop drawings 1, super thin two-way trigger tube shown in Figure 2; this super thin two-way trigger tube is made up of electrode 1, diffusion layer 2, PN junction 3, silicon substrate 4, glass passivation layer 5; trigger tube integral body is cuboid; upper and lower surface is a square; with silicon substrate 4 is central shaft; substantially symmetrical up and down; electrode 1 is positioned at foursquare central authorities; diffusion layer 2 be positioned at electrode 1 under; silicon materials 4 expand with diffusion layer 2 different impurity; and concentration differs two more than the order of magnitude, formation PN junction 3, glass passivation layer 5 protection PN junctions 3.
This specific embodiment comprises the steps silicon chip pickling → cleaning → diffusion → cutting → glassivation → plating → alloy → plating → test → scribing → sliver.
Pickling comprises the steps (1) complex acid: by following volume ratio preparation: H
2SO
4: HNO
3: CH
3COOH: HF=9: 9: 12: 4, (2) corrosion: 15min ± 1min was corroded in the acid of silicon chip being put into configuration.(3) light checks down whether the surface is clean, if brightless, has a stain, and is H at volume proportion
2O: H
2O
2: NH
4OH=5: boil 10min in 2: 1 the solution.(4) with silicon chip towards cold deionized water 30min, the oven dry, obtain silicon wafer thickness in 100 μ m ± 5 μ m.
Adopt glassivation technology.Adopt the glass passivation protection PN junction, solved and done the problem that dark knot diffusion silicon dioxide can't be sheltered, shortened technological process simultaneously, improved operating efficiency, the reverse leakage characteristic and the hot properties of chip are improved greatly, improved the reliability of device effectively.Because silicon chip is very thin, frangible, the glassivation hind wing is out of shape partially, adopts four rod boats, vertically stands up sintering, has solved the inclined to one side problem on deformation of glassivation hind wing.
Adopt the cutting of infrared ray Alignment Process.Because silicon chip is very thin, with the very easy fragment of common mask aligner, can't produce in enormous quantities.Infrared ray is aimed at the double-sided exposure mask aligner, and this mask aligner gently contacts version, during photoetching silicon chip is not had pressure, is difficult for fragment, has improved alignment precision, has improved rate of finished products.
Adopt biquartz pipe diffusion technology.Because it is especially little that two-way trigger voltage difference requires, trigger voltage 36v and two-way trigger voltage difference are less than 2v, air-flow is inhomogeneous slightly, just big especially to two-way trigger voltage difference influence, temperature has the two-way trigger voltage difference of fluctuation that very big variation is just arranged slightly, adopt biquartz pipe diffusion technology for this reason, it is inhomogeneous to the big problem of two-way trigger voltage difference influence to have solved air-flow, adopt the full-automatic diffusion furnace of numerical control, 70 centimetres of the constant temperature heads of district, the temperature difference 0.5 degree has solved the influence of temperature fluctuation to two-way trigger voltage difference.
Claims (4)
1. the manufacture method of a super thin two-way trigger tube is characterized in that: comprise the steps:
With silicon chip pickling → cleaning → diffusion → cutting → glassivation → plating → alloy → plating → test → scribing → sliver; Silicon slice corrosion is to 100 μ m ± 5 μ m in the acid pickling step.
2. according to the manufacture method of the described super thin two-way trigger tube of claim 1, it is characterized in that:
Described pickling comprises that step has (1) part complex acid: H by volume
2SO
4: HNO
3: CH
3COOH: HF=9: 9: 12: 4, (2) corrosion: silicon chip is put into the acid for preparing corrode 15min ± 1min.
3. according to the manufacture method of the described super thin two-way trigger tube of claim 1, it is characterized in that:
Described pickling also comprises that step (3) is H in parts by volume to the silicon chip after corroding
2O: H
2O
2: NH
4OH=5: boil 10min in 2: 1 the solution, dry towards cold deionized water 30min (4).
4. according to the manufacture method of claim 1,2 or 3 described super thin two-way trigger tubes, it is characterized in that: glassivation adopts four rod boats vertically to stand up the method for sintering, and cutting adopts infrared ray to aim at the double-sided exposure mask aligner, and biquartz pipe diffusion technology is adopted in diffusion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100145886A CN100466169C (en) | 2007-04-27 | 2007-04-27 | Method for making super thin two-way trigger tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100145886A CN100466169C (en) | 2007-04-27 | 2007-04-27 | Method for making super thin two-way trigger tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101051607A true CN101051607A (en) | 2007-10-10 |
| CN100466169C CN100466169C (en) | 2009-03-04 |
Family
ID=38782921
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100145886A Active CN100466169C (en) | 2007-04-27 | 2007-04-27 | Method for making super thin two-way trigger tube |
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|---|---|
| CN (1) | CN100466169C (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101399201B (en) * | 2008-11-13 | 2010-08-18 | 杭州杭鑫电子工业有限公司 | Method for manufacturing silicon bidirectional trigger diode |
| CN102129987A (en) * | 2010-12-30 | 2011-07-20 | 常州星海电子有限公司 | Process for passivating bidirectional trigger diode scrapped glass |
| CN102760774A (en) * | 2012-07-04 | 2012-10-31 | 王萌 | High-voltage trigger tube and triggering circuit for both stove oven and metal halogen lamp |
| CN107195626A (en) * | 2017-07-06 | 2017-09-22 | 如皋市大昌电子有限公司 | A kind of glass seals two-way trigger tube |
| CN109659230A (en) * | 2018-12-13 | 2019-04-19 | 吉林华微电子股份有限公司 | The semiconductor processing method of double-sided glass terminal |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3907615A (en) * | 1968-06-28 | 1975-09-23 | Philips Corp | Production of a three-layer diac with five-layer edge regions having middle region thinner at center than edge |
| JPH11176800A (en) * | 1997-10-07 | 1999-07-02 | Denso Corp | Etching method for silicon wafer |
| FR2815473B1 (en) * | 2000-10-13 | 2003-03-21 | St Microelectronics Sa | DIAC PLANAR SYMMETRIC |
| US6547647B2 (en) * | 2001-04-03 | 2003-04-15 | Macronix International Co., Ltd. | Method of wafer reclaim |
| US7064069B2 (en) * | 2003-10-21 | 2006-06-20 | Micron Technology, Inc. | Substrate thinning including planarization |
-
2007
- 2007-04-27 CN CNB2007100145886A patent/CN100466169C/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101399201B (en) * | 2008-11-13 | 2010-08-18 | 杭州杭鑫电子工业有限公司 | Method for manufacturing silicon bidirectional trigger diode |
| CN102129987A (en) * | 2010-12-30 | 2011-07-20 | 常州星海电子有限公司 | Process for passivating bidirectional trigger diode scrapped glass |
| CN102760774A (en) * | 2012-07-04 | 2012-10-31 | 王萌 | High-voltage trigger tube and triggering circuit for both stove oven and metal halogen lamp |
| CN102760774B (en) * | 2012-07-04 | 2014-11-26 | 王萌 | High-voltage trigger tube and triggering circuit for both stove oven and metal halogen lamp |
| CN107195626A (en) * | 2017-07-06 | 2017-09-22 | 如皋市大昌电子有限公司 | A kind of glass seals two-way trigger tube |
| CN107195626B (en) * | 2017-07-06 | 2019-12-31 | 如皋市大昌电子有限公司 | Glass-sealed bidirectional trigger tube |
| CN109659230A (en) * | 2018-12-13 | 2019-04-19 | 吉林华微电子股份有限公司 | The semiconductor processing method of double-sided glass terminal |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100466169C (en) | 2009-03-04 |
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