CN107768481A - A kind of solar battery sheet goes back of the body knot and polishing method - Google Patents
A kind of solar battery sheet goes back of the body knot and polishing method Download PDFInfo
- Publication number
- CN107768481A CN107768481A CN201710852456.4A CN201710852456A CN107768481A CN 107768481 A CN107768481 A CN 107768481A CN 201710852456 A CN201710852456 A CN 201710852456A CN 107768481 A CN107768481 A CN 107768481A
- Authority
- CN
- China
- Prior art keywords
- cell piece
- tmah
- body knot
- purified water
- psg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000005498 polishing Methods 0.000 title claims abstract description 15
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims abstract description 38
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 238000007654 immersion Methods 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 239000008213 purified water Substances 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000003513 alkali Substances 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 6
- -1 silicon nitrides Chemical class 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 abstract description 4
- 238000007667 floating Methods 0.000 abstract description 3
- 229910021645 metal ion Inorganic materials 0.000 abstract description 3
- 230000004224 protection Effects 0.000 abstract description 3
- 239000010865 sewage Substances 0.000 abstract description 3
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 150000007530 organic bases Chemical class 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000013083 solar photovoltaic technology Methods 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides a kind of solar battery sheet and goes back of the body knot and polishing method, can remove caused PSG layers and back side p n knots during cell piece diffusing, doping, while reach the purpose of polished backside.The present invention outstanding advantages be：1) when removing PSG layers, using single HF, sewage composition is single to be easy to recycle, and is advantageous to environmental protection；2) back of the body knot polishing is carried out using organic base TMAH, metal ion will not be introduced on cell piece surface；3) compared with traditional " Overwater-floating " technique, PSG layers is removed into PECVD silicon nitride coating process arrangements and gone between back of the body knot and glossing, HF and TMAH processing are all that technique is simple by the way of complete immersion, low for equipment requirements.
Description
Technical field
The present invention relates to a kind of solar cell piece polished backside method, belong to solar-photovoltaic technology, more particularly to crystal
Silicon solar cell.
Background technology
The too busy to get away energy of human society hair, the energy is the power source of all productivity.Oil, coal, natural gas are
Three most big basic energy resources of application at present, but three is non-renewable, as deepening continuously for exploitation will be increasingly exhausted.Too
Positive energy is green, inexhaustible not to the utmost with it, it is considered to be one kind of most possible substitution traditional energy technology.
Cell piece is the core component of solar cell, and it prepares main experience following steps：1) cleaning and making herbs into wool；
2) diffusing, doping；3) phosphorosilicate glass cleaning and etching edge；4) PECVD silicon nitrides plated film；5) metal electrode printing and sintering.Its
Middle diffusing, doping is to produce p-n junction in solar battery sheet front, mostly using tubular diffusion furnace, in p-n junction in diffusion process
In can produce one layer of phosphorosilicate glass layer (abbreviation PSG, for the silicon dioxide layer rich in P elements).PSG layers can to follow-up plated film and
Sintering process produces harmful effect, and the edge of silicon chip and front have p-n junction after diffusion, can cause silicon chip double-sided electrode
Conducting electric leakage, reduce battery to the collection efficiency of photogenerated current.
Go the back of the body tie and polishing can avoid cell piece front and back connect caused by short circuit, increase cell backside
Reflectivity so that the active layer that the light of long wavelength turns again to battery through backside reflection is reused, and improves incident light
Utilization ratio, add infrared optical response, directly improve quantum efficiency.The cell piece back side by polishing is smooth,
Also the preparation for next step passivating back film provides good substrate basis.
It is using the technique for being commonly called as " Overwater-floating ", before PECVD preparations to remove back of the body knot and polishing method at present.Specific mistake
Journey is the surface tension with liquid, allows cell piece to swim in above corrosive liquid, and positive not contact corrosion liquid, the only back side and surrounding connects
Corrosive liquid is touched, so as to remove the PSG on cell piece periphery and bottom, then with alkali lye cell piece is polished.Due to cell piece just
There are the PSG protections not removed in face, so will not be polished.Cell piece after polished is positive with acid solution processing removal
PSG.But required precision of such technique to equipment is higher, it is desirable to which liquid level can not have big shake, otherwise can overflow liquid level
The front for crossing cell piece erodes positive p-n junction, and needs accurate measurement and supplement, changes corrosive liquid, and equipment is basic
By high price import.
The content of the invention
Present invention aims to overcome that the deficiencies in the prior art, there is provided a kind of solar battery sheet goes to back of the body knot and polishing side
Method, caused PSG layers and back side p-n junction during diffusing, doping can be removed, and reach the purpose of polishing to the cell piece back side.
Its technique is simple, low for equipment requirements, can substantially reduce the production cost of solar cell.
To achieve the above objectives, a kind of solar battery sheet of the present invention goes back of the body knot and polishing method to include following step
Suddenly：
Step 1：PSG layers are removed, by by the cell piece of diffusing, doping, is immersed in HF solution, is produced during removal diffusing, doping
Raw PSG；
Step 2：Cleaning, by above-mentioned cell piece, the HF for removing cell piece and remaining is cleaned with purified water；
Step 3：PECVD silicon nitride plated films, by above-mentioned cell piece, the processing of PECVD silicon nitrides coating process is carried out, in cell piece just
Face prepares one layer of silicon nitride film.
Step 4：Go the back of the body to tie and polish, above-mentioned cell piece is immersed in TMAH (TMAH) solution, due to battery
Piece upper surface, which has one layer of silicon nitride film, can protect front not reacted by TMAH, and p-n junction and throwing are removed so as to reach the back side
The purpose of light.
Step 5：Cleaning, by above-mentioned cell piece, the TMAH alkali lye for removing and being remained on cell piece piece is cleaned with purified water.
Step 6：Air-dry, above-mentioned cell piece is dried up above-mentioned cell piece using hot blast air knife.
Further, the mass concentration of HF solution described in step 1 is 5%~10%, and soak time is 150s~300s,
Reaction temperature is room temperature.
Further, the purified water cleaning way described in step 2 is first to be cleaned using overflow, is rapidly removed on cell piece
The HF of residual, then rinsed by the way of lifting slowly, further remove the impurity remained on cell piece.
Further, the mass concentration of TMAH alkali lye described in step 4 be 25%~28%, soak time be 90s~
120s, treatment temperature are 60 DEG C~80 DEG C.
Further, the purified water cleaning way described in step 5 is first to be cleaned using overflow, is rapidly removed on cell piece
The TMAH of residual, then rinsed by the way of lifting slowly, further remove the impurity remained on cell piece.
The beneficial effects of the invention are as follows caused PSG layers and back side p-n junction during cell piece diffusing, doping can be removed,
Reach the purpose of polished backside simultaneously.The present invention outstanding advantages be：1) when removing PSG layers, using single HF, sewage composition list
One is easy to recycle, and is advantageous to environmental protection；2) back of the body knot and polishing are carried out using organic base TMAH, in cell piece table
Face will not introduce metal ion；3) compared with traditional " Overwater-floating " technique, PSG layers are removed into PECVD silicon nitride coating process arrangements
And go between back of the body knot and glossing, HF and TMAH processing are all that technique is simple by the way of complete immersion, to equipment requirement
It is low.
Embodiment
With reference to embodiment, the present invention will be further described.
A kind of solar cell goes back of the body knot and polishing method, can be divided into following steps：
1) PSG layers are removed：At room temperature, the cell piece by diffusing, doping is soaked into 250s in 5% HF solution, removes diffusion and mix
Caused PSG during miscellaneous；
2) clean：By above-mentioned cell piece, clean overflow with purified water and clean, rapidly remove the HF on cell piece surface.Then pure
Change in water, by the way of lifting slowly, further remove the impurity on cell piece surface；
3) PECVD silicon nitrides plated film：By above-mentioned cell piece, the processing of PECVD silicon nitrides coating process is carried out, is made in cell piece front
Standby one layer of silicon nitride film；
4) back of the body is gone to tie and polish：By above-mentioned cell piece, it is molten to be immersed in the TMAH (TMAH) that mass concentration is 25%
In liquid, temperature 70 C, immersion treatment 100s are controlled；
5) clean：By above-mentioned cell piece, clean overflow with purified water and clean, rapidly remove the TMAH alkali lye on cell piece surface.With
Afterwards in purified water, by the way of lifting slowly, the impurity on cell piece surface is further removed；
6) air-dry：By above-mentioned cell piece, above-mentioned cell piece is dried up using hot blast air knife.
The solar cell back face flat smooth prepared in embodiment, the reflectivity of light is strengthened, short circuit current and opened
Road voltage is effectively lifted, and show cell piece goes back of the body knot and polishing to achieve better effects.Meanwhile spend used in PSG layers
HF acid solution compositions are single, are easy to sewage disposal.TMAH alkali lye used in polishing, itself does not introduce metal ion.With it is traditional " waterborne
Drift " technique is compared, and acid solution and base extraction are all the complete immersion modes used, and technique is simple, low for equipment requirements, is advantageous to drop
The production cost of low solar cell.
Further details of elaboration has been carried out to the present invention above in association with specific embodiment, reality is not limited in actual production
Example is applied, for industry personnel, in the case of the basic thought of the present invention is not departed from, what technical solution of the present invention was done is any
Change is all in claims of the present invention limited range.
Claims (5)
1. a kind of solar battery sheet goes back of the body knot and polishing method, it is characterised in that the described method comprises the following steps：
Step 1：PSG layers are removed, by by the cell piece of diffusing, doping, is immersed in HF solution, is produced during removal diffusing, doping
Raw PSG；
Step 2：Cleaning, by above-mentioned cell piece, the HF for removing cell piece and remaining is cleaned with purified water；
Step 3：PECVD silicon nitride plated films, by above-mentioned cell piece, the processing of PECVD silicon nitrides coating process is carried out, in cell piece just
Face prepares one layer of silicon nitride film；
Step 4：Go the back of the body to tie and polish, above-mentioned cell piece is immersed in TMAH (TMAH) solution, remove the back side
P-n junction simultaneously polishes；
Step 5：Cleaning, by above-mentioned cell piece, the TMAH alkali lye for removing and being remained on cell piece piece is cleaned with purified water；
Step 6：Air-dry, above-mentioned cell piece is dried up above-mentioned cell piece using hot blast air knife.
2. according to claim 1, it is characterised in that the mass concentration of HF solution described in step 1 is 5%~10%, immersion
Time is 150s~300s, and reaction temperature is room temperature.
3. according to claim 1, it is characterised in that the purified water cleaning way described in step 2 is, first clear using overflow
Wash, rapidly remove the HF remained on cell piece, then rinsed by the way of lifting slowly, further removed residual on cell piece
The impurity stayed.
4. according to claim 1, it is characterised in that the mass concentration of TMAH alkali lye described in step 4 be 25%~
28%, soak time is 90s~120s, and treatment temperature is 60 DEG C~80 DEG C.
5. according to claim 1, its feature is first to be cleaned using overflow in the purified water cleaning way described in step 5,
The TMAH remained on cell piece is rapidly removed, is then rinsed by the way of lifting slowly, is further removed residual on cell piece
The impurity stayed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710852456.4A CN107768481A (en) | 2017-09-19 | 2017-09-19 | A kind of solar battery sheet goes back of the body knot and polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710852456.4A CN107768481A (en) | 2017-09-19 | 2017-09-19 | A kind of solar battery sheet goes back of the body knot and polishing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107768481A true CN107768481A (en) | 2018-03-06 |
Family
ID=61266138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710852456.4A Pending CN107768481A (en) | 2017-09-19 | 2017-09-19 | A kind of solar battery sheet goes back of the body knot and polishing method |
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| Country | Link |
|---|---|
| CN (1) | CN107768481A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108649098A (en) * | 2018-04-19 | 2018-10-12 | 常州捷佳创精密机械有限公司 | A kind of method of silicon chip single side etching polishing |
| CN111354623A (en) * | 2018-12-24 | 2020-06-30 | 天津环鑫科技发展有限公司 | Process for cleaning silicon wafer by slow cold water pulling |
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|---|---|---|---|---|
| CN101853899A (en) * | 2010-03-31 | 2010-10-06 | 晶澳(扬州)太阳能光伏工程有限公司 | Method for preparing solar cell by using local area back field |
| CN102956741A (en) * | 2011-08-17 | 2013-03-06 | 云南天达光伏科技股份有限公司 | Manufacture process of solar cells |
| CN102969392A (en) * | 2012-10-17 | 2013-03-13 | 横店集团东磁股份有限公司 | Single-side polishing process of solar monocrystalline silicon battery |
| CN105185866A (en) * | 2015-08-15 | 2015-12-23 | 常州天合光能有限公司 | Efficient passivation contact crystalline silicon solar cell preparation method |
| CN106784131A (en) * | 2016-11-11 | 2017-05-31 | 揭阳中诚集团有限公司 | Solar battery sheet based on N-type silicon chip and preparation method thereof |
-
2017
- 2017-09-19 CN CN201710852456.4A patent/CN107768481A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101853899A (en) * | 2010-03-31 | 2010-10-06 | 晶澳(扬州)太阳能光伏工程有限公司 | Method for preparing solar cell by using local area back field |
| CN102956741A (en) * | 2011-08-17 | 2013-03-06 | 云南天达光伏科技股份有限公司 | Manufacture process of solar cells |
| CN102969392A (en) * | 2012-10-17 | 2013-03-13 | 横店集团东磁股份有限公司 | Single-side polishing process of solar monocrystalline silicon battery |
| CN105185866A (en) * | 2015-08-15 | 2015-12-23 | 常州天合光能有限公司 | Efficient passivation contact crystalline silicon solar cell preparation method |
| CN106784131A (en) * | 2016-11-11 | 2017-05-31 | 揭阳中诚集团有限公司 | Solar battery sheet based on N-type silicon chip and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108649098A (en) * | 2018-04-19 | 2018-10-12 | 常州捷佳创精密机械有限公司 | A kind of method of silicon chip single side etching polishing |
| CN111354623A (en) * | 2018-12-24 | 2020-06-30 | 天津环鑫科技发展有限公司 | Process for cleaning silicon wafer by slow cold water pulling |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: Hangzhou City, Zhejiang province 311201 block Bridge Economic Development Zone Xiaoshan Hung Hing Road No. 358 Applicant after: Zhejiang green yup Polytron Technologies Inc Address before: Hangzhou City, Zhejiang province 311201 block Bridge Economic Development Zone Xiaoshan Hung Hing Road No. 358 Applicant before: Green energy technology (Hangzhou) Co., Ltd. |
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Application publication date: 20180306 |
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| RJ01 | Rejection of invention patent application after publication |