CN109727861A - The production method of etching groove processing technology and diode - Google Patents
The production method of etching groove processing technology and diode Download PDFInfo
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- CN109727861A CN109727861A CN201910003957.4A CN201910003957A CN109727861A CN 109727861 A CN109727861 A CN 109727861A CN 201910003957 A CN201910003957 A CN 201910003957A CN 109727861 A CN109727861 A CN 109727861A
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- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 6
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
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Abstract
The invention belongs to diode production fields, and in particular to the production method of a kind of etching groove processing technology and diode.It is ditched with ditching machine, is then rinsed, corroded again with nitration mixture after first drying, nitration mixture is the mixture of nitric acid, hydrofluoric acid, acetic acid and sulfuric acid, and the time of nitration mixture corrosion is 1.8-2.2 minutes, secondary drying after washing.Trench digging is to open V-groove, ditching depth are as follows: 135-140 μm, the open-topped width of V-groove are as follows: 250-300 μm.The present invention can complete the etching groove of chip completely without photoetching process; avoid cumbersome yellow light process; without using expensive photoresist and lithographic equipment; the etching groove that chip is completed using simple technique and shorter time, is greatly improved efficiency, and yields is high; save time and the energy; environment is protected, the present invention also provides a kind of production method of diode, the diode behavior of preparation is excellent.
Description
Technical field
The invention belongs to diode production fields, and in particular to the producer of a kind of etching groove processing technology and diode
Method.
Background technique
At present the production technology of high-frequency rectification diode include yellow light photoetching three times, wherein the purpose of first time yellow light photoetching be
Etching groove is carried out to chip, to expose PN section, condition is provided for the passivation protection of glass, and for dividing the wafer into
Several independent crystal grain, convenient for cutting separation.It is well known that lithographic process steps are cumbersome, including it is gluing, exposure, aobvious
Shadow, post bake, removes photoresist and rinses at fixing.Current tradition yellow light ditch process flow are as follows: 1. take cleaning sheet enter photoetching station,
2. silicon chip surface gluing, 3. front bakings (soft baking), 4. alignments are checked with fixing, 6. post bakes (hard to dry), 7. with exposure, 5. developments, are filled out
Write record and round-off work, 8. quality control are examined, 9. photoetching piece burn intos 10. pure water rinsing remains acid solution, 11. dryings with
Baking, 12. check, fill in record, the inspection of 13. quality control, 14. phosphorus face glues, 15. toast, 16. take material to platform corruption station, 17.
Check that preparation, 18. 2 times photoetching piece burn intos 19. are washed by water with pure water, 20. sulfuric acid remove photoresist, 21. wash by water, 22. dry and dry
Dry, 23. inspections take up and finish up, 24. quality control are examined, 25. test TRR values, 26. trench digging materials to cleaning station, whole technique steps
Rapid up to 26 steps, complex process, and also the deadline that only yellow light photoetching carries out etching groove is just up to 2-3 hours.
The stability of the coating integrity of photoresist, the firmness of attachment and the developing fixing technique being related to, all
Determine the etching quality of groove, influence factor is complicated.Yellow light photoetching carries out etching groove, and not only processing step is many and diverse, it is desirable that
Harshness, and photoresist quality and lithographic equipment requirement are relatively high, and good photoresist generally requires import, lithographic equipment ratio
Costly, factors above can mean that many requirements of manpower, raw material and equipment, therefore production cost is high.Together
When, the use and cleaning process of removing photoresist hereafter of photoresist, developing fixing chemicals that photoetching process is related to all can be to rings
Border pollutes.But it is currently current solution that yellow light photoetching, which carries out etching groove, without better alternative techniques,
It is a problem of current silicon diode production technology.Current research is all the raising around yellow light photoetching process, not yet
The report that yellow light photoetching carries out the etching groove of high quality can be accomplished to completely dispense with.
Summary of the invention
In view of the deficiencies of the prior art, the object of the present invention is to provide a kind of etching groove processing technology, completely without
Photoetching process can complete the etching groove of chip, avoid cumbersome yellow light process, without using expensive photoresist and light
Carve equipment, it is only necessary to use ditching machine, the etching groove of chip is completed using simple technique and shorter time, is greatly mentioned
High efficiency, yields is high, substantially reduces cumbersome, saves time and the energy, protects environment, and the present invention also provides one kind two
The diode behavior of the production method of pole pipe, preparation is excellent.
Etching groove processing technology of the present invention, is ditched with ditching machine, is then rinsed, use nitration mixture after first drying again
Corrosion, nitration mixture are the mixture of nitric acid, hydrofluoric acid, acetic acid and sulfuric acid, and the time of nitration mixture corrosion is 1.8-2.2 minutes, after washing
Secondary drying.
Wherein:
Ditching depth are as follows: 135-140 μm, width are as follows: 250-300 μm.Preferably, it ditches to open V-groove, ditching depth
Are as follows: 135-140 μm, the open-topped width of V-groove are as follows: 250-300 μm.It is only needed 3-5 minutes with the ditching machine trench digging time.
The present invention can complete the etching groove of chip completely without photoetching process, avoid cumbersome yellow light process,
Without using expensive photoresist and lithographic equipment, it is only necessary to use ditching machine, by control trench digging shape, depth and width, when
Between and hold etching time, the etching groove of chip can be only completed at 3-5 minutes.
Rinsing are as follows: first use cleaning agent ultrasound 9-11 minutes, then with hot pure water ultrasound 9-11 minutes of 70 DEG C -90 DEG C, finally
It is impregnated 9-11 minutes with flowing water.Cleaning agent uses the cleaning agent of this field conventional commercial.Using such rinse method, can remove
The clast that machinery trench digging generates, and ditch is not had an impact.
The time of nitration mixture corrosion is 1.8-2.2 minutes, preferably 2 minutes.Etching time greatly reduces, thus acid solution opposite side
Corrosion to material greatly reduces, and corrosion hole is unobvious, therefore the raising of pn-junction actual effective area, forward voltage VF thus change
Small, product electrically improves.
Nitric acid, hydrofluoric acid, acetic acid and the sulphur that nitration mixture is 9.0-9.2:9.0-9.2:12.0-12.2:4.0-4.2 by volume ratio
Acid composition, it is preferable that nitration mixture is made of nitric acid, hydrofluoric acid, acetic acid and the sulfuric acid that volume ratio is 9:9:12:4.
The present invention is ditched using ditching machine, and nitration mixture is 9.0-9.2:9.0-9.2:12.0-12.2:4.0-4.2 by volume ratio
Nitric acid, hydrofluoric acid, acetic acid and sulfuric acid composition, nitration mixture corrosive effect is good.And traditional yellow light ditch must first use nitric acid, hydrogen fluorine
The nitration mixture of acid, acetic acid and sulfuric acid composition corrodes cleaning, then with volume ratio is nitric acid (65-68%), hydrofluoric acid (>=40%), ice second
The nitration mixture of acid (99.5%)=18:1:1 corrodes cleaning, and cleaning process is complicated, and at high cost, pickling time is long, so to pn-junction corruption
Erosion is serious.
Washing time is 2 ± 0.1 minutes, preferably 2 minutes, is washed to optimize trench digging quality, since washing time is short, no
It will affect wafer surface quality.
The temperature of secondary drying is 148-152 degrees Celsius, and preferably 150 degrees Celsius, the time is half an hour.
As a kind of perferred technical scheme, etching groove processing technology of the present invention includes the following steps: with opening
Ditch machine trench digging, it is only necessary to 3-5 minutes, complete trench digging, ditching depth are as follows: 135-140 μm, width are as follows: 250-300 μm；Then, it cleans
Agent ultrasound 10 minutes, hot pure water ultrasound 10 minutes, flowing water impregnates 10 minutes；Corroded again with nitration mixture after first drying, is washed 2 minutes
With optimization trench digging quality, dried under 150 degrees Celsius, the time is half an hour.
As a kind of perferred technical scheme, etching groove processing technology of the present invention, includes the following steps: 1, boron
Face is ditched, 2. rinse, 3. dryings are checked with baking, 4., fill in record, the inspection of 5. quality control, (time is shorter, only for 6. trench digging corrosion
That surface is washed off), 7. bath, 8. drying with drying, 9. check take up and finish up, 10. quality control examine, 11. test TRR values,
12. material of ditching is to cleaning station.The present invention carries out the process flow of ditch as it appears from the above, only needing 12 step process, only with ditching machine
The etching groove that chip can be completed at 3-5 minutes, compared to 26 step process of current traditional yellow light ditch technique, yellow light photoetching into
The row etching groove deadline is up to 2-3 hours, and efficiency of the present invention is greatly improved, and yields is up to 99%, drops significantly
Low cumbersome, wastage of material, cost of labor and equipment investment, have saved the energy, have protected environment.
The present invention also provides a kind of production methods of diode, including the etching groove processing technology.
As a kind of perferred technical scheme, the production method of diode of the present invention, comprising the following steps:
(1) Wafer Cleaning；
(2) phosphorus boron is spread；
(3) etching groove processing technology；
(4) RCA is cleaned；
(5) glass is applied, glass is burnt；
(6) nickel plating opens a window；
(7) nickel plating and nickel sintering；
(8) gold-plated.
The etching crystallite dimension of diode is 40,42,45,50 or 60mil.
As a kind of perferred technical scheme, the production method of diode of the present invention, comprising the following steps:
(1) Wafer Cleaning: with cleaning agent ultrasound, pure water rinsing, with hydrofluoric acid dips, pure water cleaning, drying；
(2) phosphorus boron is spread: first expanding phosphorus, expanding phosphorus temperature is 1200 DEG C, and the time is 3 hours；Sandblasting again；Then expand boron, expand
Boron temperature is 1260 DEG C, and the time is 24 hours；
(3) the etching groove processing technology described in；
(4) RCA is cleaned: using hydrofluoric acid dips, bath is boiled at least 6 minutes under the conditions of 75 DEG C in No. 1 solution, is washed by water, so
It boils under the conditions of afterwards 75 DEG C in No. 2 solution 6 minutes, is dried after cleaning；Wherein: No. 1 solution are as follows: 2500ml pure water, 500ml concentration
The mixed liquor for the ammonium hydroxide that hydrogen peroxide and 500ml concentration for 30-35% are 25-28%；No. 2 solution are 2500ml pure water, 500ml
The mixed liquor for the hydrochloric acid that the hydrogen peroxide and 500ml concentration that concentration is 30-35% are 36%；
(5) glass is applied, glass is burnt: once applying glass paste, keep the temperature 1 hour at 650 DEG C of temperature, the primary mistake for applying glass paste
Cheng Zhongtong oxygen, oxygen flow are 5L/ points；Secondary painting glass paste again is sintered 15 minutes, secondary painting glass at 830 DEG C of temperature
Lead to oxygen during slurry, oxygen flow is 10L/ points；Then it is changed to logical nitrogen, nitrogen flow is 10L/ points；
(6) nickel plating opens a window: resist coating toast 30-35 minutes at 90-100 DEG C, then through exposure and development and is fixed
The post bake at 130-140 DEG C afterwards, post bake time are 40-50 minutes；It is opened a window using the mixed liquor low temperature of hydrochloric acid and hydrofluoric acid, low temperature
Temperature is -10 DEG C, is taken out when temperature rises to -5 DEG C, is rinsed after removing photoresist with sulfuric acid, drying；Wherein: hydrochloric acid and hydrofluoric acid it is mixed
Close the mixed liquor that liquid is the hydrochloric acid that 3.6 liters of concentration are 36% and the hydrofluoric acid that 0.6 liter of concentration is 49-50%；
(7) nickel plating and nickel sintering: cleaning is washed by water successively with after hydrofluoric acid and chlorogold solution processing；Nickel plating, punching
After water drying, diffusion furnace is warming up to 570-590 DEG C of sintering；The nitre for using concentration to be mixed to get for the nitric acid of 65-68% and pure water
Acid solution removes nickel surface oxide layer, and cleaning is successively handled with hydrofluoric acid and chlorogold solution, secondary nickel plating after cleaning；Wherein:
The proportion of nickel plating and secondary nickel plating is equal are as follows: 1200g nickel chloride, 2000g ammonium chloride and 2600g lemon are added in 20L pure water
400g sodium hypophosphite is added in acid after stirring；The volume ratio of hydrofluoric acid and chlorogold solution is 250:2500, chlorogold solution
The preparation method comprises the following steps: matching 1g chlorauride and 250ml hydrochloric acid to obtain chlorauride stock solution, by 50ml chlorauride stock solution and 10ml
Hydrofluoric acid mixing, then adds pure water to 2500ml；
(8) gold-plated: gold-plated using gold plating liquid, gold-plated temperature is 90-92 DEG C, is washed by water, baking.
In conclusion the invention has the following advantages that
(1) present invention eliminates the complicated technology that a yellow light step includes, and uses one step of ditching machine trench digging technique instead and realizes
Trench etch saves multiple working procedure；The present invention is not necessarily to gluing, exposes, and develops, fixing, and post bake such as removes photoresist and rinse at the photoetching
Technique, process greatly reduce, and reduce artificial；Secondly without expensive lithographic equipment, it is only necessary to which ditching machine, equipment are simply invested
It is few；Meanwhile avoiding using photoresist required for photoetching process, it developing fixing drug and removes photoresist and cleans drug, further
Production cost is reduced, and reduces environmental pollution.
(2) present invention can complete the etching groove of chip completely without photoetching process, avoid cumbersome yellow light mistake
Journey, without using expensive photoresist and lithographic equipment, it is only necessary to use ditching machine, pass through control trench digging shape, depth, width
Degree, time and assurance etching time, can only complete the etching groove of chip, the present invention is carved with ditching machine at 3-5 minutes
Ditch only needs 12 step process, and efficiency greatly improves, and yields is up to 99%, greatly reduce cumbersome, wastage of material,
Cost of labor and equipment investment, have saved the energy, protect environment.
(3) show by measured data: the present invention is suitble to the crystal grain of various sizes, including 40/42/45/50/60mil etc.
High-frequency rectification diode is prepared in size, the production method of diode of the present invention, and reverse withstand voltage 1200-1500 is lied prostrate,
Leakage current is less than 0.15 μ A, and the technical standard of existing conventional method is fully achieved in 97-99% in yields.Work of the present invention
Skill has been produced in batches, and properties of product are stablized, and realizes excellent high-frequency diode parameter characteristic.
(4) the shortcomings that the present invention overcomes the prior arts, greatly reduces cumbersome, it is only necessary to 3-5 minutes energy
The etching groove of chip is completed, efficiency greatly improves, but ensure that the high quality of etching groove, maintains excellent product matter
Amount, yields are up to 99%, good reliability.Cost of labor and equipment investment are reduced, and without using expensive photoetching process institute
Reagent is needed, the energy has been saved, protects environment.
(5) present invention is by carrying out mechanical trench digging to chip using ditching machine, and nitration mixture corrodes 2 minutes after trench digging, instead of working as
Move ahead the complicated technology that yellow light lithographic trenches etch in the industry；Meanwhile the etching groove of present invention completion chip only needs 3-5 minutes,
And whole process requirements 3 hours or so are completed in yellow light photoetching, therefore, the present invention utilizes simple process, substantially increases groove quarter
Efficiency is lost, the etching groove being simple and efficient is realized.
(6) present invention process process greatly reduces, the simple small investment of equipment, reduces artificial photoetching process without valuableness
Required raw material reduces environmental pollution, and product yield is high, good reliability.
(7) photoetching ditches yields as 95%-99% in industry, but complex steps, and process conditions are harsh, waste of energy,
Pollute environment.The present invention utilizes simple equipment, realizes etching groove yields 97-99%, high efficiency low energy consumption, and cost is big
Big to reduce, the time shortens, moreover, the problem of effectively reducing environmental pollution caused by photoetching process.
(8) the present invention also provides a kind of production methods of diode, and the diode behavior of preparation is excellent, using work of the present invention
Diode prepared by skill is electrically commonly available improvement, and forward voltage VF average value reduces, and reverse withstand voltage VR average value increases,
VF/IR is reduced, and data discrete is smaller, illustrates that product quality is more stable.
Detailed description of the invention
Fig. 1 is that embodiment 1 carries out the pictorial diagram before groove ditch post-etching using ditching machine technique；
Fig. 2 is the V-type ditch front schematic view after ditching in 1 etching groove processing technology of embodiment, before corrosion；
Fig. 3 is the V-type ditch side schematic view after ditching in 1 etching groove processing technology of embodiment, before corrosion；
Fig. 4 is the V-type ditch front schematic view after ditching in 1 etching groove processing technology of embodiment, after corrosion；
Fig. 5 is the V-type ditch side schematic view after ditching in 1 etching groove processing technology of embodiment, after corrosion；
Fig. 6 is the front schematic view that comparative example carries out product after etching groove using traditional yellow light photoetching；
Fig. 7 is the side schematic view that comparative example carries out product after etching groove using traditional yellow light photoetching.
Specific embodiment
Below with reference to embodiment, the present invention will be further described.
Embodiment 1
A kind of production method of diode, comprising the following steps:
(1) Wafer Cleaning: with cleaning agent ultrasound 20 minutes, pure water rinsing, with hydrofluoric acid dips 2 minutes, pure water cleaning was dried
It is dry；
(2) phosphorus boron is spread: first expanding phosphorus, expanding phosphorus temperature is 1200 DEG C, and the time is 3 hours；Sandblasting again；Then expand boron, expand
Boron temperature is 1260 DEG C, and the time is 24 hours；
(3) the etching groove processing technology described in；
(4) RCA is cleaned: using hydrofluoric acid dips, bath is boiled at least 6 minutes under the conditions of 75 DEG C in No. 1 solution, is washed by water, so
It boils under the conditions of afterwards 75 DEG C in No. 2 solution 6 minutes, is dried after cleaning；Wherein: No. 1 solution are as follows: 2500ml pure water, 500ml concentration
The mixed liquor for the ammonium hydroxide that hydrogen peroxide and 500ml concentration for 32% are 26%；No. 2 solution are 2500ml pure water, 500ml concentration is
The mixed liquor for the hydrochloric acid that 32% hydrogen peroxide and 500ml concentration is 36%；
(5) glass is applied, glass is burnt: once applying glass paste, keep the temperature 1 hour at 650 DEG C of temperature, the primary mistake for applying glass paste
Cheng Zhongtong oxygen, oxygen flow are 5L/ points；Secondary painting glass paste again is sintered 15 minutes, secondary painting glass at 830 DEG C of temperature
Lead to oxygen during slurry, oxygen flow is 10L/ points；Then it is changed to logical nitrogen, nitrogen flow is 10L/ points；
(6) nickel plating opens a window: resist coating toasts 32 minutes at 95 DEG C, then through exposure and development with after fixing 135
Post bake at DEG C, post bake time are 45 minutes；It being opened a window using the mixed liquor low temperature of hydrochloric acid and hydrofluoric acid, cryogenic temperature is -10 DEG C, to
Temperature is taken out when rising to -5 DEG C, rinses after removing photoresist with sulfuric acid, drying；Wherein: the mixed liquor of hydrochloric acid and hydrofluoric acid is 3.6 liters of concentration
For the mixed liquor for the hydrofluoric acid that 36% hydrochloric acid and 0.6 liter of concentration are 50%；
(7) nickel plating and nickel sintering: cleaning is washed by water successively with after hydrofluoric acid and chlorogold solution processing；Nickel plating, punching
After water drying, diffusion furnace is warming up to 580 DEG C of sintering；The nitric acid for using 2 liters of concentration to be mixed to get for 67% nitric acid and 2 liters of pure water
Solution removes nickel surface oxide layer, and cleaning is successively handled with hydrofluoric acid and chlorogold solution, secondary nickel plating after cleaning；Wherein: one
The proportion of secondary nickel plating and secondary nickel plating is equal are as follows: 1200g nickel chloride, 2000g ammonium chloride and 2600g citric acid are added in 20L pure water,
400g sodium hypophosphite is added in stirring after ten minutes；The volume ratio of hydrofluoric acid and chlorogold solution is 250:2500, and chlorauride is molten
Liquid the preparation method comprises the following steps: match 1g chlorauride and 250ml hydrochloric acid to obtain chlorauride stock solution, by 50ml chlorauride stock solution with
The mixing of 10ml hydrofluoric acid, then adds pure water to 2500ml.
(8) gold-plated: gold-plated using gold plating liquid, gold-plated temperature is 91 DEG C, is washed by water, baking；The gold plating liquid is the city 250ml
Sell the mixed liquor of gold plating liquid and 3500ml pure water.
Wherein:
Etching groove processing technology described in step (3) are as follows: ditched, ditched to open V-groove with ditching machine, the trench digging time is
3 minutes, complete trench digging, ditching depth are as follows: 136 ± 1 μm, the open-topped width of V-groove are as follows: 260 ± 5 μm；Ditching machine is outputed
V-groove front schematic view and side schematic view see Fig. 2 and Fig. 3, then, first with cleaning agent ultrasound 10 minutes, then with 80 DEG C
Hot pure water ultrasound 10 minutes, is finally impregnated 10 minutes with flowing water；Corroded again with nitration mixture after first drying, nitration mixture is 9 by volume ratio:
The nitric acid of 9:12:4, hydrofluoric acid, acetic acid and sulfuric acid composition, etching time are 2 minutes, the front schematic view of the product after corrosion and
Side schematic view is shown in Fig. 4 and Fig. 5.It is dried under 150 degrees Celsius, the time is half an hour with optimization trench digging quality within washing 2 minutes.
Etching time is 2 minutes, and acid solution is small to the corrosion of lateral material, and corrosion hole is unobvious, pn-junction actual effective area
Improve, VF thus become smaller, product electrically improves.
The embodiment is shown in Fig. 1 using the pictorial diagram before ditching machine technique progress groove ditch post-etching.
The diode product obtained to embodiment 1 is tested, test result such as table 1.
Table 1
Comparative example
A kind of production method of diode, step is same as Example 1, and difference is that step (3) use traditional yellow light
Photoetching carries out etching groove, then rinses, first drying post-etching, etching condition are as follows: -10 DEG C hereinafter, be first 9 with volume ratio:
The nitric acid of 9:12:4, hydrofluoric acid, acetic acid and sulfuric acid composition nitration mixture corrode cleaning, then with volume ratio be 18:1:1 nitric acid it is (dense
Degree for 66%), the nitration mixture of hydrofluoric acid (>=40%), glacial acetic acid (concentration 99.5%) corrosion cleaning, secondary drying after washing.
Front schematic view and side schematic view are shown in Fig. 6 and Fig. 7.It is each due to acid liquid corrosion it can be seen from Fig. 6 and Fig. 7
Anisotropy, it is laterally etched faster than longitudinal etching speed, cause trench lateral recessed larger up to the acid etching of more than ten minutes, leads to pn
Tie actual effective area reduce, VF thus become larger, product electrically be deteriorated.
The diode product that comparative example obtains is tested, test result such as table 2.
Table 2
As can be seen from Table 1 and Table 2, improvement is electrically commonly available using diode prepared by present invention process, it is positive
Voltage VF average value reduces, and reverse withstand voltage VR average value increases, and VF/IR is reduced, and data discrete is smaller, illustrates product matter
It measures more stable.
Diode is made in comparative example yellow light ditch product, the crystal grain envelope of diode is made in embodiment ditching machine trench digging product
After dress, product reliability experiment is carried out.
Comparative example yellow light ditch product reliability experiment table is shown in Table 3, ditching machine of embodiment of the present invention trench digging product reliability
Experiment is shown in Table 4.
Table 3
Table 4
Using etching groove processing technology of the present invention and traditional yellow light ditch work it can be seen from table 3 and table 4
The product test of skill preparation is all qualified.
Claims (10)
1. a kind of etching groove processing technology, it is characterised in that: ditched with ditching machine, then rinsed, again with mixed after first drying
Acid corrosion, nitration mixture are the mixture of nitric acid, hydrofluoric acid, acetic acid and sulfuric acid, and the time of nitration mixture corrosion is 1.8-2.2 minutes, washing
Secondary drying afterwards.
2. etching groove processing technology according to claim 1, it is characterised in that: ditch to open V-groove, ditching depth
Are as follows: 135-140 μm, the open-topped width of V-groove are as follows: 250-300 μm.
3. etching groove processing technology according to claim 1, it is characterised in that: the trench digging time is 3-5 minutes.
4. etching groove processing technology according to claim 1, it is characterised in that: rinsing are as follows: first use cleaning agent ultrasound 9-
11 minutes, then with hot pure water ultrasound 9-11 minutes of 70 DEG C -90 DEG C, finally impregnated 9-11 minutes with flowing water.
5. etching groove processing technology according to claim 1, it is characterised in that: nitration mixture is 9.0-9.2 by volume ratio:
Nitric acid, hydrofluoric acid, acetic acid and the sulfuric acid composition of 9.0-9.2:12.0-12.2:4.0-4.2.
6. etching groove processing technology according to claim 1, it is characterised in that: washing time is 2-2.1 minutes.
7. etching groove processing technology according to claim 1, it is characterised in that: the temperature of secondary drying is 148-152
Degree Celsius, the time is half an hour.
8. a kind of production method of diode, it is characterised in that: process work including etching groove as claimed in claim 1 to 7
Skill.
9. the production method of diode according to claim 8, it is characterised in that: the following steps are included:
(1) Wafer Cleaning；
(2) phosphorus boron is spread；
(3) the etching groove processing technology described in；
(4) RCA is cleaned；
(5) glass is applied, glass is burnt；
(6) nickel plating opens a window；
(7) nickel plating and nickel sintering；
(8) gold-plated.
10. the production method of diode according to claim 9, it is characterised in that: the following steps are included:
(1) Wafer Cleaning: with cleaning agent ultrasound, pure water rinsing, with hydrofluoric acid dips, pure water cleaning, drying；
(2) phosphorus boron is spread: first expanding phosphorus, expanding phosphorus temperature is 1200 DEG C, and the time is 3 hours；Sandblasting again；Then expand boron, expand boron temperature
Degree is 1260 DEG C, and the time is 24 hours；
(3) the etching groove processing technology described in；
(4) RCA is cleaned: using hydrofluoric acid dips, bath is boiled at least 6 minutes under the conditions of 75 DEG C in No. 1 solution, is washed by water, is then existed
It boils 6 minutes under the conditions of 75 DEG C in No. 2 solution, is dried after cleaning；Wherein: No. 1 solution are as follows: 2500ml pure water, 500ml concentration are
The hydrogen peroxide and 500ml concentration of 30-35% is the mixed liquor of the ammonium hydroxide of 25-28%；No. 2 solution are 2500ml pure water, 500ml is dense
The mixed liquor for the hydrochloric acid that the hydrogen peroxide and 500ml concentration that degree is 30-35% are 36%；
(5) glass is applied, glass is burnt: once applying glass paste, keep the temperature 1 hour at 650 DEG C of temperature, during primary painting glass paste
Logical oxygen, oxygen flow are 5L/ points；Secondary painting glass paste again is sintered 15 minutes at 830 DEG C of temperature, secondary painting glass paste
Lead to oxygen in the process, oxygen flow is 10L/ points；Then it is changed to logical nitrogen, nitrogen flow is 10L/ points；
(6) nickel plating opens a window: resist coating toasts 30-35 minutes at 90-100 DEG C, then through exposure and development with after fixing
Post bake at 130-140 DEG C, post bake time are 40-50 minutes；It is opened a window using the mixed liquor low temperature of hydrochloric acid and hydrofluoric acid, cryogenic temperature
It is -10 DEG C, is taken out when temperature rises to -5 DEG C, is rinsed after removing photoresist with sulfuric acid, drying；Wherein: the mixed liquor of hydrochloric acid and hydrofluoric acid
For 3.6 liters of concentration be 36% hydrochloric acid and 0.6 liter of concentration be 49-50% hydrofluoric acid mixed liquor；
(7) nickel plating and nickel sintering: cleaning is washed by water successively with after hydrofluoric acid and chlorogold solution processing；Nickel plating, bath are dried
After dry, diffusion furnace is warming up to 570-590 DEG C of sintering；The nitric acid for using concentration to be mixed to get for the nitric acid of 65-68% and pure water is molten
Liquid removes nickel surface oxide layer, and cleaning is successively handled with hydrofluoric acid and chlorogold solution, secondary nickel plating after cleaning；Wherein: primary
The proportion of nickel plating and secondary nickel plating is equal are as follows: 1200g nickel chloride, 2000g ammonium chloride and 2600g citric acid are added in 20L pure water, stirs
400g sodium hypophosphite is added after mixing；The volume ratio of hydrofluoric acid and chlorogold solution is 250:2500, the preparation of chlorogold solution
Method are as follows: match 1g chlorauride and 250ml hydrochloric acid to obtain chlorauride stock solution, by 50ml chlorauride stock solution and 10ml hydrogen fluorine
Acid-mixed is closed, and then adds pure water to 2500ml；
(8) gold-plated: gold-plated using gold plating liquid, gold-plated temperature is 90-92 DEG C, is washed by water, baking.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113066722A (en) * | 2021-03-18 | 2021-07-02 | 扬州虹扬科技发展有限公司 | Anisotropic manufacturing method of high voltage device |
| CN113066721A (en) * | 2021-03-18 | 2021-07-02 | 扬州虹扬科技发展有限公司 | Manufacturing method of wafer for vehicle |
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| US20140015115A1 (en) * | 2012-07-16 | 2014-01-16 | SK Hynix Inc. | Semiconductor chips having improved solidity, semiconductor packages including the same and methods of fabricating the same |
| CN105932070A (en) * | 2016-06-17 | 2016-09-07 | 山东芯诺电子科技有限公司 | Low-power-consumption and high-surge capacity diode rectifier chip and production technology thereof |
| CN107731675A (en) * | 2017-09-18 | 2018-02-23 | 山东晶导微电子有限公司 | A kind of semiconductor wafer mechanical slotting technique |
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| US20140015115A1 (en) * | 2012-07-16 | 2014-01-16 | SK Hynix Inc. | Semiconductor chips having improved solidity, semiconductor packages including the same and methods of fabricating the same |
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