CN106024865A - Mesa diode processing technology - Google Patents
Mesa diode processing technology Download PDFInfo
- Publication number
- CN106024865A CN106024865A CN201610566729.4A CN201610566729A CN106024865A CN 106024865 A CN106024865 A CN 106024865A CN 201610566729 A CN201610566729 A CN 201610566729A CN 106024865 A CN106024865 A CN 106024865A
- Authority
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- Prior art keywords
- glass
- silicon chip
- mesa
- glass paste
- silicon
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000005516 engineering process Methods 0.000 title abstract description 3
- 239000011521 glass Substances 0.000 claims abstract description 51
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 38
- 239000010703 silicon Substances 0.000 claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 15
- 238000001259 photo etching Methods 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000007788 liquid Substances 0.000 claims abstract description 10
- 239000002253 acid Substances 0.000 claims abstract description 6
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229960000583 acetic acid Drugs 0.000 claims abstract description 5
- 238000009792 diffusion process Methods 0.000 claims abstract description 5
- 239000012362 glacial acetic acid Substances 0.000 claims abstract description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 14
- 239000000428 dust Substances 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 9
- 239000002904 solvent Substances 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 8
- 238000006396 nitration reaction Methods 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910000831 Steel Inorganic materials 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 6
- 238000010304 firing Methods 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- 239000010959 steel Substances 0.000 claims description 6
- 239000001856 Ethyl cellulose Substances 0.000 claims description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 3
- 235000002597 Solanum melongena Nutrition 0.000 claims description 3
- 244000061458 Solanum melongena Species 0.000 claims description 3
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 238000005275 alloying Methods 0.000 claims description 3
- 239000003708 ampul Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000000502 dialysis Methods 0.000 claims description 3
- 239000003085 diluting agent Substances 0.000 claims description 3
- 229920001249 ethyl cellulose Polymers 0.000 claims description 3
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 3
- 239000005355 lead glass Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 150000003376 silicon Chemical class 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- 239000000843 powder Substances 0.000 abstract 2
- 238000002161 passivation Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241001080929 Zeugopterus punctatus Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66136—PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
Abstract
The invention discloses a mesa diode processing technology comprising the following steps: completing diffusion film making; photo-etching a trench for the first time; corroding a circular groove mesa for the first time; photo-etching the trench for the second time; corroding the circular groove mesa for the second time; growing a silicon dioxide film on the circular groove mesa and cleaning the silicon dioxide film; applying glass powder; baking glass powder; performing glass passivation; and corroding and cleaning the surface. According to the invention, mixed acid corrosive liquid is prepared with nitric acid, hydrofluoric acid and glacial acetic acid according to the volume ratio of 5:3:1, photo-etched silicon wafers are corroded in the mixed acid corrosive liquid to corrode out PN junction mesa grooves of chips, and the geometrical shape of the mesa diode PN junctions is corroded into a circular shape. As the circular shape has a smooth curved surface, highest breakdown voltage is achieved. Thus, the breakdown voltage effect of devices is improved effectively.
Description
Technical field
The present invention relates to semiconductor electronic component technical field, the processing of a kind of mesa diode
Technique.
Background technology
Mesa diode, although the manufacture method of PN junction is identical with diffused, but, only retain PN junction
And the part of necessity, unnecessary portion medicine is eroded.Its remaining part just presents appearance
Face shape, thus gain the name.The mesa of initial production, makes quasiconductor materials'use diffusion method.
Therefore, again this mesa is called diffused-mesa.PN junction geometry and semiconductor surface electric field pair
The impact of breakdown voltage is the most notable.The adverse effect to breakdown voltage due to corner angle electric field and surface field,
High-voltage diode does not the most use planar structure to commonly use mesa structure.At present, existing general table top knot
Structure diode PN junction geometry is poor to the breakdown voltage effect improving device.
Summary of the invention
It is an object of the invention to provide the processing technique of a kind of mesa diode, to solve existing one
As the mesa structure diode PN junction geometry poor problem of breakdown voltage effect to improving device.
For achieving the above object, the present invention provides following technical scheme: the processing of a kind of mesa diode
Technique, this processing technique comprises the following steps:
Diffusion sheet completes → and the corrosion circular trough table top → secondary lithographic trenches of secondary lithographic trenches → once →
Anticaustic circular trough table top → circular trough table top growth silicon dioxide film and cleaning treatment → coating glass dust
→ bakee glass dust → glassivation → surface corrosion cleaning.
S1, will diffuse out the silicon chip of PN junction according to the dimensions of required chip carry out gluing, front baking,
Exposure, development and the photoetching process of post bake, carry out photoetching round shape figure；
S2, by volume, by nitric acid: Fluohydric acid.: glacial acetic acid=5:3:1 is configured to nitration mixture corrosive liquid,
Then silicon chip after photoetching is put in nitration mixture corrosive liquid and corrode, corrode the PN junction table top ditch each chip
Groove, keeps each chip chamber to connect and not dialysis, then carries out cleaning of removing photoresist；
S2, preparation glass paste solvent: ethyl cellulose and diluent are placed in the ratio of 1g:10ml
In beaker, heated and stirred is dissolved, and makes glass paste solvent；
S2, preparation glass paste: pour glass paste solvent and lead glass frit into eggplant in 3ml:5g ratio
Shape bottle is stirred；
S3, the glass paste being stirred drips to corrode the silicon chip surface of groove, with rustless steel spoon at silicon
On sheet apply, make glass paste uniformly fill in groove, then with rustless steel scraper by unnecessary glass paste from silicon
Sheet surface scrapes gently, subsequently this silicon chip is put into quartz boat；
S4, glass pre-burning: push fire door and dry 12-18 minute, push calcined temperature and be 420-480 DEG C, push away
Entering burn-in time is 25-28 minute, burning-off photoresist layer simultaneously；Calcined temperature is transferred to 565～575 DEG C,
The quartz boat that will be equipped with coated glass paste silicon chip puts into pre-burning in quartz ampoule, and the time is 25 minutes；
Silicon chip after S5, wiping pre-burning: by the glass dust wiped clean of the silicon chip surface after pre-burning, and note
In groove, glass paste is not wiped；
S6, glass burn till: the silicon chip wiped through Watch glass brush is carried out glass and burns till, deluster simultaneously
Photoresist, firing temperature is 830-840 DEG C, and firing time is 12-18 minute, is cooled to 500-550 DEG C,
Time is 30 minutes, and being naturally cooling to less than 200 DEG C can come out of the stove；
S7, re-operate one time again according to the order of S5 to S8；
S8, after cleaned for the silicon chip after glassivation, nickel plating or gold-plated alloying, carry out scribing, make
The chip of silicon rectification device.
Compared with prior art, the method have the advantages that this invention, will by by volume
Nitric acid: Fluohydric acid.: glacial acetic acid=5:3:1 is configured to nitration mixture corrosive liquid, is then put into by silicon chip after photoetching
Nitration mixture corrosive liquid corrodes, corrodes the PN junction mesa trench each chip, by mesa structure diode
PN junction geometry is corroded and circular shape, and circle has mild curved surfaces, can have the highest hitting
Wear voltage, effectively raise the breakdown voltage effect of device.
Detailed description of the invention
Technical scheme in the embodiment of the present invention will be clearly and completely described below, it is clear that institute
The embodiment described is only a part of embodiment of the present invention rather than whole embodiments.Based on this
Embodiment in bright, those of ordinary skill in the art are obtained under not making creative work premise
Every other embodiment, broadly falls into the scope of protection of the invention.
The present invention provides a kind of technical scheme: the processing technique of a kind of mesa diode, this processing technique
Comprise the following steps:
Diffusion sheet completes → and the corrosion circular trough table top → secondary lithographic trenches of secondary lithographic trenches → once →
Anticaustic circular trough table top → circular trough table top growth silicon dioxide film and cleaning treatment → coating glass dust
→ bakee glass dust → glassivation → surface corrosion cleaning, the thickness of circular trough table top growth silicon dioxide film
Degree is 1.5-2 nanometer.
S1, will diffuse out the silicon chip of PN junction according to the dimensions of required chip carry out gluing, front baking,
Exposure, development and the photoetching process of post bake, carry out photoetching round shape figure；
S2, by volume, by nitric acid: Fluohydric acid.: glacial acetic acid=5:3:1 is configured to nitration mixture corrosive liquid,
Then silicon chip after photoetching is put in nitration mixture corrosive liquid and corrode, corrode the PN junction table top ditch each chip
Groove, keeps each chip chamber to connect and not dialysis, then carries out cleaning of removing photoresist；
S2, preparation glass paste solvent: ethyl cellulose and diluent are placed in the ratio of 1g:10ml
In beaker, heated and stirred is dissolved, and makes glass paste solvent；
S2, preparation glass paste: pour glass paste solvent and lead glass frit into eggplant in 3ml:5g ratio
Shape bottle is stirred；
S3, the glass paste being stirred drips to corrode the silicon chip surface of groove, with rustless steel spoon at silicon
On sheet apply, make glass paste uniformly fill in groove, then with rustless steel scraper by unnecessary glass paste from silicon
Sheet surface scrapes gently, subsequently this silicon chip is put into quartz boat；
S4, glass pre-burning: push fire door and dry 12-18 minute, push calcined temperature and be 420-480 DEG C, push away
Entering burn-in time is 25-28 minute, burning-off photoresist layer simultaneously；Calcined temperature is transferred to 565～575 DEG C,
The quartz boat that will be equipped with coated glass paste silicon chip puts into pre-burning in quartz ampoule, and the time is 25 minutes；
Silicon chip after S5, wiping pre-burning: by the glass dust wiped clean of the silicon chip surface after pre-burning, and note
In groove, glass paste is not wiped；
S6, glass burn till: the silicon chip wiped through Watch glass brush is carried out glass and burns till, deluster simultaneously
Photoresist, firing temperature is 830-840 DEG C, and firing time is 12-18 minute, is cooled to 500-550 DEG C,
Time is 30 minutes, and being naturally cooling to less than 200 DEG C can come out of the stove；
S7, re-operate one time again according to the order of S5 to S8；
S8, after cleaned for the silicon chip after glassivation, nickel plating or gold-plated alloying, carry out scribing, make
The chip of silicon rectification device.
Although an embodiment of the present invention has been shown and described, for those of ordinary skill in the art
Speech, it is possible to understand that these embodiments can be carried out without departing from the principles and spirit of the present invention
Multiple change, revising, replace and modification, the scope of the present invention is limited by claims and equivalent thereof
Fixed.
Claims (1)
1. the processing technique of a mesa diode, it is characterised in that: this processing technique includes following step
Rapid:
Diffusion sheet completes → and the corrosion circular trough table top → secondary lithographic trenches of secondary lithographic trenches → once →
Anticaustic circular trough table top → circular trough table top growth silicon dioxide film and cleaning treatment → coating glass dust
→ bakee glass dust → glassivation → surface corrosion cleaning.
S1, will diffuse out the silicon chip of PN junction according to the dimensions of required chip carry out gluing, front baking,
Exposure, development and the photoetching process of post bake, carry out photoetching round shape figure；
S2, by volume, by nitric acid: Fluohydric acid.: glacial acetic acid=5:3:1 is configured to nitration mixture corrosive liquid,
Then silicon chip after photoetching is put in nitration mixture corrosive liquid and corrode, corrode the PN junction table top ditch each chip
Groove, keeps each chip chamber to connect and not dialysis, then carries out cleaning of removing photoresist；
S2, preparation glass paste solvent: ethyl cellulose and diluent are placed in the ratio of 1g:10ml
In beaker, heated and stirred is dissolved, and makes glass paste solvent；
S2, preparation glass paste: pour glass paste solvent and lead glass frit into eggplant in 3ml:5g ratio
Shape bottle is stirred；
S3, the glass paste being stirred drips to corrode the silicon chip surface of groove, with rustless steel spoon at silicon
On sheet apply, make glass paste uniformly fill in groove, then with rustless steel scraper by unnecessary glass paste from silicon
Sheet surface scrapes gently, subsequently this silicon chip is put into quartz boat；
S4, glass pre-burning: push fire door and dry 12-18 minute, push calcined temperature and be 420-480 DEG C, push away
Entering burn-in time is 25-28 minute, burning-off photoresist layer simultaneously；Calcined temperature is transferred to 565～575 DEG C,
The quartz boat that will be equipped with coated glass paste silicon chip puts into pre-burning in quartz ampoule, and the time is 25 minutes；
Silicon chip after S5, wiping pre-burning: by the glass dust wiped clean of the silicon chip surface after pre-burning, and note
In groove, glass paste is not wiped；
S6, glass burn till: the silicon chip wiped through Watch glass brush is carried out glass and burns till, deluster simultaneously
Photoresist, firing temperature is 830-840 DEG C, and firing time is 12-18 minute, is cooled to 500-550 DEG C,
Time is 30 minutes, and being naturally cooling to less than 200 DEG C can come out of the stove；
S7, re-operate one time again according to the order of S5 to S8；
S8, after cleaned for the silicon chip after glassivation, nickel plating or gold-plated alloying, carry out scribing, make
The chip of silicon rectification device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610566729.4A CN106024865A (en) | 2016-07-19 | 2016-07-19 | Mesa diode processing technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610566729.4A CN106024865A (en) | 2016-07-19 | 2016-07-19 | Mesa diode processing technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106024865A true CN106024865A (en) | 2016-10-12 |
Family
ID=57119641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610566729.4A Pending CN106024865A (en) | 2016-07-19 | 2016-07-19 | Mesa diode processing technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106024865A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106783576A (en) * | 2016-12-20 | 2017-05-31 | 锦州辽晶电子科技有限公司 | High-voltage semiconductor discrete device chip anticaustic mesa technology |
| CN109302159A (en) * | 2018-08-01 | 2019-02-01 | 河源市众拓光电科技有限公司 | A kind of method of compound substrate and compound substrate production thin film bulk acoustic wave resonator |
| CN109309014A (en) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | Improve the glass firing process of product electrical parameter |
| CN111739798A (en) * | 2020-05-21 | 2020-10-02 | 如皋市大昌电子有限公司 | Cleaning and packaging method for diode high-voltage silicon stack |
| CN112086368A (en) * | 2020-08-05 | 2020-12-15 | 如皋市大昌电子有限公司 | Preparation process of plastic-sealed high-voltage silicon stack of quick switch |
| CN112909078A (en) * | 2021-02-08 | 2021-06-04 | 临沂卓芯电子有限公司 | High-voltage ultrafast recovery diode chip and manufacturing method thereof |
| CN113066719A (en) * | 2021-03-18 | 2021-07-02 | 吉林华微电子股份有限公司 | Silicon wafer manufacturing method and silicon wafer |
| CN114388372A (en) * | 2021-05-19 | 2022-04-22 | 上海音特电子有限公司 | Technological method for power semiconductor PN junction protection |
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| CN101038892A (en) * | 2007-04-25 | 2007-09-19 | 天津中环半导体股份有限公司 | Knife scraping method glass passivation process for silicon current rectifier |
| CN101478006A (en) * | 2009-01-19 | 2009-07-08 | 西安电子科技大学 | Terahertz GaN Gunn diode based on conducting type SiC substrate and manufacturing process thereof |
| CN102129987A (en) * | 2010-12-30 | 2011-07-20 | 常州星海电子有限公司 | Process for passivating bidirectional trigger diode scrapped glass |
| US9368650B1 (en) * | 2015-07-16 | 2016-06-14 | Hestia Power Inc. | SiC junction barrier controlled schottky rectifier |
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2016
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Patent Citations (4)
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| CN101038892A (en) * | 2007-04-25 | 2007-09-19 | 天津中环半导体股份有限公司 | Knife scraping method glass passivation process for silicon current rectifier |
| CN101478006A (en) * | 2009-01-19 | 2009-07-08 | 西安电子科技大学 | Terahertz GaN Gunn diode based on conducting type SiC substrate and manufacturing process thereof |
| CN102129987A (en) * | 2010-12-30 | 2011-07-20 | 常州星海电子有限公司 | Process for passivating bidirectional trigger diode scrapped glass |
| US9368650B1 (en) * | 2015-07-16 | 2016-06-14 | Hestia Power Inc. | SiC junction barrier controlled schottky rectifier |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106783576A (en) * | 2016-12-20 | 2017-05-31 | 锦州辽晶电子科技有限公司 | High-voltage semiconductor discrete device chip anticaustic mesa technology |
| CN106783576B (en) * | 2016-12-20 | 2021-01-26 | 锦州辽晶电子科技有限公司 | Secondary corrosion table-board process for high-voltage-resistance semiconductor discrete device chip |
| CN109309014A (en) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | Improve the glass firing process of product electrical parameter |
| CN109302159A (en) * | 2018-08-01 | 2019-02-01 | 河源市众拓光电科技有限公司 | A kind of method of compound substrate and compound substrate production thin film bulk acoustic wave resonator |
| CN111739798A (en) * | 2020-05-21 | 2020-10-02 | 如皋市大昌电子有限公司 | Cleaning and packaging method for diode high-voltage silicon stack |
| CN112086368A (en) * | 2020-08-05 | 2020-12-15 | 如皋市大昌电子有限公司 | Preparation process of plastic-sealed high-voltage silicon stack of quick switch |
| CN112909078A (en) * | 2021-02-08 | 2021-06-04 | 临沂卓芯电子有限公司 | High-voltage ultrafast recovery diode chip and manufacturing method thereof |
| CN112909078B (en) * | 2021-02-08 | 2022-11-29 | 临沂卓芯电子有限公司 | High-voltage ultrafast recovery diode chip and manufacturing method thereof |
| CN113066719A (en) * | 2021-03-18 | 2021-07-02 | 吉林华微电子股份有限公司 | Silicon wafer manufacturing method and silicon wafer |
| CN114388372A (en) * | 2021-05-19 | 2022-04-22 | 上海音特电子有限公司 | Technological method for power semiconductor PN junction protection |
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Application publication date: 20161012 |
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