CN113562686A - Manufacturing method of 3D-MEMS probe - Google Patents
Manufacturing method of 3D-MEMS probe Download PDFInfo
- Publication number
- CN113562686A CN113562686A CN202110632967.1A CN202110632967A CN113562686A CN 113562686 A CN113562686 A CN 113562686A CN 202110632967 A CN202110632967 A CN 202110632967A CN 113562686 A CN113562686 A CN 113562686A
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- metal
- probe
- layer
- seed layer
- manufacturing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00111—Tips, pillars, i.e. raised structures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00539—Wet etching
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
Abstract
The invention relates to a manufacturing method of a 3D-MEMS (three-dimensional-micro-electromechanical system) probe, which specifically comprises the following steps: sputtering a seed layer on the substrate; spin coating negative or positive photoresist; exposing and developing the product by using a photoetching machine; growing high-strength metal by using an electroplating method; removing the relevant photoresist; growing a metal layer on the high-strength metal and the exposed seed layer by electroplating; grinding the metal layer to the thickness of the high-strength metal by using a grinding machine; and finally removing the seed layer and the metal layer by using a wet method after the repeated growth is finished, stripping the 3D structure probe from the upper surface of the substrate, and collecting and cleaning. The invention utilizes the MEMS processing technology and the mixed electroplating grinding technology to produce and manufacture the 3D probe, and uses the wet etching method to strip the produced product, the preparation process is simple, and the application of the MEMS processing technology in the preparation of the 3D probe product is realized.
Description
Technical Field
The invention relates to the technical field of probe preparation, in particular to a manufacturing method of a 3D-MEMS probe.
Background
The MEMS processing technology is widely applied to the field of probe preparation, at present, related 2D probe products are generally manufactured through the MEMS processing technology in related fields, the application of the MEMS processing technology in the 3D probe preparation technology is not available, and the 3D probe is complex in current preparation technology and high in cost. The invention utilizes MEMS processing technology and mixed electroplating grinding technology to produce and manufacture the 3D probe, and uses a wet etching method to strip the produced product.
Disclosure of Invention
The invention aims to provide a manufacturing method of a 3D-MEMS probe, which is used for solving the problem that the MEMS processing technology cannot be realized in the prior art to prepare the 3D-MEMS probe.
The invention provides a manufacturing method of a 3D-MEMS (three-dimensional-micro-electromechanical systems) probe, which specifically comprises the following steps:
s1: sputtering a seed layer on the substrate;
s2: spin-coating a negative or positive SU8 photoresist;
s3: manufacturing a related pattern mask, and exposing and developing a product by using a photoetching machine;
s4: growing high-strength metal by using an electroplating method;
s5: removing the related photoresist by a wet method or a dry method;
s6: growing a metal layer with a thickness higher than that of the high-strength metal on the high-strength metal and the exposed seed layer by electroplating;
s7: grinding the metal layer electroplated in the step S6 to the thickness of the high-strength metal by using a grinding machine;
s8: repeating steps S2-S7;
s9: and removing the seed layer and the metal layer by using a wet method, and collecting and cleaning after stripping the 3D structure probe from the upper surface of the substrate.
Further, the substrate in step S1 is Silicon or ceramic.
Further, the thickness of the seed layer in step S1 is 10nm to 200 nm.
Further, the seed layer in step S1 is a copper layer.
Further, the high-strength metal in step S4 is Pd or a Pd alloy.
Further, the metal layer in step S6 is a copper layer.
Further, in the metal layer polishing process described in step S7, the polishing thickness is 1 to 20 um.
The technical scheme of the invention has the beneficial effects that:
the invention utilizes the MEMS processing technology and the mixed electroplating grinding technology to produce and manufacture the 3D probe, and uses the wet etching method to strip the produced product, the preparation process is simple, and the application of the MEMS processing technology in the preparation of the 3D probe product is realized.
Drawings
FIG. 1 is a schematic diagram of the process for preparing the 3D-MEMS probe of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention.
As shown in fig. 1, the present invention provides a method for manufacturing a 3D-MEMS probe, which specifically includes the following steps:
s1: sputtering a seed layer on the substrate;
s2: spin-coating a negative or positive SU8 photoresist;
s3: manufacturing a related pattern mask, and exposing and developing a product by using a photoetching machine;
s4: growing high-strength metal by using an electroplating method;
s5: removing the related photoresist by a wet method or a dry method;
s6: growing a metal layer with a thickness higher than that of the high-strength metal on the high-strength metal and the exposed seed layer by electroplating;
s7: grinding the metal layer electroplated in the step S6 to the thickness of the high-strength metal by using a grinding machine;
s8: repeating steps S2-S7 to complete the desired multi-layer pattern;
s9: and removing the seed layer and the metal layer by using a wet method, and collecting and cleaning after stripping the 3D structure probe from the upper surface of the substrate.
Specifically, the substrate in step S1 is Silicon or ceramic, or other substrates may be selected, the thickness of the seed layer is 10nm to 200nm, and the seed layer is a copper layer.
The high-strength metal in step S4 is Pd or a Pd alloy, but not limited to Pd-related metal.
The metal layer in step S6 is a copper layer, but not limited to the copper layer.
In the metal layer grinding process described in step S7, the grinding thickness is 1-20 um.
In conclusion, the 3D probe is produced and manufactured by utilizing the MEMS processing technology and the mixed electroplating grinding technology, the produced product is stripped by using the wet etching method, the preparation process is simple, and the application of the MEMS processing technology in the preparation of the 3D probe product is realized.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (7)
1. A manufacturing method of a 3D-MEMS probe is characterized by comprising the following steps:
s1: sputtering a seed layer on the substrate;
s2: spin-coating a negative or positive SU8 photoresist;
s3: manufacturing a related pattern mask, and exposing and developing a product by using a photoetching machine;
s4: growing high-strength metal by using an electroplating method;
s5: removing the related photoresist by a wet method or a dry method;
s6: growing a metal layer with a thickness higher than that of the high-strength metal on the high-strength metal and the exposed seed layer by electroplating;
s7: grinding the metal layer electroplated in the step S6 to the thickness of the high-strength metal by using a grinding machine;
s8: repeating steps S2-S7;
s9: and removing the seed layer and the metal layer by using a wet method, and collecting and cleaning after stripping the 3D structure probe from the upper surface of the substrate.
2. The method of manufacturing a 3D-MEMS probe according to claim 1, wherein the substrate in step S1 is Silicon or ceramic.
3. The method of manufacturing a 3D-MEMS probe according to claim 1, wherein the seed layer in step S1 has a thickness of 10nm to 200 nm.
4. The method of claim 1, wherein the seed layer in step S1 is a copper layer.
5. The method of claim 1, wherein the high strength metal in step S4 is Pd or a Pd alloy.
6. The method of manufacturing a 3D-MEMS probe according to claim 1, wherein the metal layer in step S6 is a copper layer.
7. The method of claim 1, wherein the metal layer is polished to a thickness of 1-20um in the step S7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110632967.1A CN113562686A (en) | 2021-06-07 | 2021-06-07 | Manufacturing method of 3D-MEMS probe |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110632967.1A CN113562686A (en) | 2021-06-07 | 2021-06-07 | Manufacturing method of 3D-MEMS probe |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113562686A true CN113562686A (en) | 2021-10-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110632967.1A Pending CN113562686A (en) | 2021-06-07 | 2021-06-07 | Manufacturing method of 3D-MEMS probe |
Country Status (1)
| Country | Link |
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| CN (1) | CN113562686A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116106591A (en) * | 2023-01-10 | 2023-05-12 | 佛山市蓝箭电子股份有限公司 | Manufacturing method of microwave probe and microwave probe |
| WO2024021198A1 (en) * | 2022-07-26 | 2024-02-01 | 上海泽丰半导体科技有限公司 | Probe treatment method and probe |
-
2021
- 2021-06-07 CN CN202110632967.1A patent/CN113562686A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024021198A1 (en) * | 2022-07-26 | 2024-02-01 | 上海泽丰半导体科技有限公司 | Probe treatment method and probe |
| CN116106591A (en) * | 2023-01-10 | 2023-05-12 | 佛山市蓝箭电子股份有限公司 | Manufacturing method of microwave probe and microwave probe |
| CN116106591B (en) * | 2023-01-10 | 2023-09-19 | 佛山市蓝箭电子股份有限公司 | Manufacturing method of microwave probe and microwave probe |
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