KR20130060999A - Method of forming pattern - Google Patents
Method of forming pattern Download PDFInfo
- Publication number
- KR20130060999A KR20130060999A KR1020110127352A KR20110127352A KR20130060999A KR 20130060999 A KR20130060999 A KR 20130060999A KR 1020110127352 A KR1020110127352 A KR 1020110127352A KR 20110127352 A KR20110127352 A KR 20110127352A KR 20130060999 A KR20130060999 A KR 20130060999A
- Authority
- KR
- South Korea
- Prior art keywords
- developing
- pattern
- photosensitive film
- developer
- development
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000005530 etching Methods 0.000 claims abstract description 13
- 238000010030 laminating Methods 0.000 claims abstract description 4
- 230000018109 developmental process Effects 0.000 claims description 35
- 230000007261 regionalization Effects 0.000 claims description 2
- 239000004925 Acrylic resin Substances 0.000 claims 1
- 239000007788 liquid Substances 0.000 abstract 1
- 239000007921 spray Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 3
- 102100029860 Suppressor of tumorigenicity 20 protein Human genes 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229920006026 co-polymeric resin Polymers 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
Abstract
Description
The embodiment relates to a pattern forming method, a developer and a pattern glass manufacturing method.
The present invention relates to a method of forming a pattern on a substrate, in order to form the pattern may be a DFR deposition, exposure, development and etching process.
That is, a photosensitive film may be laminated on a substrate, a mask for forming a pattern may be deposited on the photosensitive film, and then exposed to form a pattern. Thereafter, a pattern to be finally formed on the substrate may be formed by developing the photosensitive film and etching the substrate.
However, conventionally, in the developing step of the manufacturing process, the process was carried out using a spray method or a dip method using a developer having the same concentration. However, in the case of the spray method, the development speed effect is good, but there is a problem that the residual film remains and hinders the etching. In the case of the dip method, the flowability of the developing solution is poor, and thus the development is not performed properly at the portion other than the pattern.
Accordingly, in the above developing step, there is a demand for a developing method in which the developing speed, the developing effect, and the residual film do not remain.
Embodiments provide a pattern forming method capable of removing a developer and a residual film having an excellent development speed and development effect when a pattern is formed on a surface, and a method of manufacturing a substrate on which the pattern is formed.
The pattern forming method according to the embodiment may include laminating a photosensitive film (DFR) on a substrate surface; Exposing a mask having a pattern formed thereon on the photosensitive film; Developing the exposure pattern formed on the photosensitive film using a developer; And etching the surface of the substrate, and developing the exposure pattern formed on the photosensitive film using a developing solution includes a first developing step and a second developing step, wherein the developing solution is 0.5% by weight. It has a concentration of 15% by weight, and the first development step and the second development step uses a developer of a different concentration.
The pattern forming method according to the embodiment includes a two-step developing step including a first developing step and a second developing step in a developing step. That is, the method may include a first developing step using a low concentration developer and a second developing step using a high concentration developer.
Accordingly, the pattern manufactured by the pattern forming method according to the embodiment can prevent the development of defective parts from the remaining film or the portion other than the pattern generated by the existing method, and at the same time as the existing process, A clean pattern can be formed, so that process efficiency can be improved, and a high quality pattern can be formed.
1 is a flowchart illustrating a process of forming a pattern according to an embodiment.
2 is a scanning electron microscope (SEM) photograph showing a pattern formed using a conventional developing process.
3 is a scanning electron microscope (SEM) photograph showing a pattern formed using the pattern forming method according to the embodiment.
In the description of embodiments, each layer, region, pattern, or structure may be “on” or “under” the substrate, each layer, region, pad, or pattern. Substrate formed in ”includes all formed directly or through another layer. Criteria for the top / bottom or bottom / bottom of each layer will be described with reference to the drawings.
The thickness or the size of each layer (film), region, pattern or structure in the drawings may be modified for clarity and convenience of explanation, and thus does not entirely reflect the actual size.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
1 is a flowchart illustrating a process of forming a pattern according to an embodiment.
Referring to FIG. 1, the pattern forming method according to the embodiment may include stacking step ST10, exposing step ST20, developing step ST30, and etching step ST40.
In the stacking step ST10, a photosensitive film may be laminated on the substrate surface. The substrate includes a glass substrate, and in more detail, the glass substrate may include soda line glass, alkali free glass, tempered glass, or the like.
In the pattern forming method according to the embodiment, a dry film resist (DFR) method is applied to form a fine pattern on the glass substrate. The method of applying the pattern may include a dry film resist method and a photoresist method.
The photosensitive film may include various kinds, but it is preferable to use an acrylic type photosensitive film such as an acrylate copolymer resin that is not oxidized or decomposed by the etching solution in the etching step. As the acryl-type photosensitive film, a commercially available product can be used.
If the photosensitive film is too thick, it is difficult to form a clean pattern during exposure or development, and if it is too thin, the photosensitive film may have a thickness in the range of 10 μm to 15 μm because it may be decomposed during the etching process.
The stacking of the photosensitive film may be performed by placing the photosensitive film on the surface of the substrate and passing the heated roller. At this time, the roller should be heated to a sufficient temperature of 100 ° C. or more so that the laminated photosensitive film and the substrate are not separated. When the photosensitive film is separated from the glass substrate, the etchant penetrates into a portion other than a portion to form a pattern on the surface, so that a pattern having a desired shape cannot be formed on the substrate.
Subsequently, in the exposing step ST20, the substrate on which the photosensitive film is laminated may be exposed. That is, an exposure pattern may be formed using a UV exposure machine by placing a mask on which the pattern is formed on the photosensitive film.
Subsequently, in the developing step ST30, the exposure pattern formed on the photosensitive film may be developed using a developer.
The developing step ST30 may include a first developing step and a second developing step.
In the first developing step and the second developing step, a developing process may be performed by changing a concentration of a developing solution. Specifically, in the first developing step, a developing process may be performed using a low concentration developer, and in the second developing step, a developing process may be performed using a high concentration developer. More specifically, the developer in the concentration of 0.5% by weight to 3% by weight may be used in the first developing step, and the developer in the concentration of 5% by weight to 15% by weight may be used in the second developing step.
The first development step may be performed for 1 to 2 minutes. In addition, the second development step may be performed for 10 seconds to 30 seconds. That is, the first development step using the developer having a low concentration of 0.5% by weight to 3% by weight may be performed for 1 minute to 2 minutes, and the second development using the developer having a high concentration of 5% by weight to 15% by weight. The step may proceed for 10 to 30 seconds.
The first development step and the second development step may be performed by immersing a substrate having an exposure pattern formed on the photosensitive film in a developer. This developing method is called a dip method. That is, the developing process includes the dip method and the spray method. The dip method is to immerse the substrate in a developing solution as described above, and the spray method is to spray on the substrate using a spray.
However, the conventional developing process uses a developer having the same concentration, and there is a problem in that the residual film remains in the case of the spray method, and in the case of the dip method, the flowability of the developer is poor, so that the development is not performed properly in a portion other than the pattern. have.
Accordingly, the developing process according to the embodiment may solve the problem by proceeding the developing process in two steps. That is, in the first development step, the development process may be performed using a developer having a low concentration, that is, 0.5 wt% to 3 wt%, to peel off the surface of the photosensitive film. Subsequently, in the second development step, the photosensitive film may be developed by digging deeply using a developer at a high concentration, that is, 5 wt% to 15 wt%.
In the first development step, the photosensitive film may be developed to 1 μm to 2 μm. In addition, in the second development step, the photosensitive snow film may be developed to 3 μm to 15 μm. Accordingly, in the first development step, the surface of the photosensitive snow film may be primarily developed, and then the photoresist film remaining in the second development step may be deeply developed.
2 is a scanning electron microscope (SEM) photograph of a substrate developed by immersing the substrate in a dip method in a developer having the same concentration. 3 is a scanning electron microscope (SEM) photograph of a substrate developed by a method using a low concentration and a high concentration developer by the pattern forming method according to the embodiment.
Referring to FIGS. 2 and 3, it can be seen that in FIG. 2, development of portions other than the pattern is not performed properly. On the other hand, it can be seen that the substrate according to FIG. 3 manufactured by the pattern forming method according to the embodiment has no developing defect and no residual film according to the conventional spray method is found.
Accordingly, the pattern formation method according to the embodiment can see the excellent development effect at the same development process time, it is possible to remove the residual film generated by the conventional spray method.
Subsequently, in the etching step ST40, the substrate may be etched to implement a pattern on the substrate. That is, a pattern to be embodied on the surface of the substrate may be formed using an etching solution.
As described above, the pattern forming method is subjected to a stepwise development process including a first development step using a low concentration of developer and a second development step using a high concentration of developer. The effect can be seen, and there is an effect that can remove the residual film generated by the conventional spray method.
The features, structures, effects and the like described in the foregoing embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. In addition, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be construed as limiting the scope of the present invention. It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments may be modified. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.
Claims (11)
Exposing a mask having a pattern formed thereon on the photosensitive film;
Developing the exposure pattern formed on the photosensitive film using a developer; And
Etching the substrate surface;
The developing of the exposure pattern formed on the photosensitive film using a developing solution includes a first developing step and a second developing step,
The developer has a concentration of 0.5% to 15% by weight,
The first and second development step pattern forming method using a different concentration of the developer.
The first developing step uses a low concentration of developer,
The second developing step is a pattern forming method using a high concentration of developer.
The low concentration developer has a concentration of 0.5% to 3% by weight,
The high concentration developer has a concentration of 5 wt% to 15 wt%.
The said pattern development method is performed by immersing the board | substrate with an exposure pattern on the said photosensitive film in the said developing solution.
The first development step is a pattern forming method for developing the photosensitive snow film for 1 minute to 2 minutes.
The second development step is a pattern forming method for developing the photosensitive film for 10 seconds to 30 seconds.
The exposure method is a pattern formation method which exposes by UV light.
The photosensitive film is a pattern forming method comprising an acrylate resin.
The photosensitive film is a pattern forming method laminated to 10㎛ 15㎛.
In the first development step, the pattern forming method for developing the photosensitive film 1㎛ 2㎛.
In the second development step, the pattern forming method for developing the photosensitive film 3㎛ 15㎛.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110127352A KR20130060999A (en) | 2011-11-30 | 2011-11-30 | Method of forming pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110127352A KR20130060999A (en) | 2011-11-30 | 2011-11-30 | Method of forming pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20130060999A true KR20130060999A (en) | 2013-06-10 |
Family
ID=48859318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020110127352A KR20130060999A (en) | 2011-11-30 | 2011-11-30 | Method of forming pattern |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20130060999A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210064760A (en) * | 2019-11-26 | 2021-06-03 | 한국과학기술원 | Stretchable transparency-adjusting film, method for manufacturing transparency-adjusting film and smart window using the same |
| CN113192845A (en) * | 2021-03-30 | 2021-07-30 | 赛创电气（铜陵）有限公司 | Exposure development method of metal box dam, metal box dam and ceramic substrate |
| KR20210154389A (en) * | 2020-06-12 | 2021-12-21 | 한국과학기술원 | Stretchable transparency-adjusting film having an orientated heterogeneous interface, method for manufacturing the same and smart window having stretchable transparency-adjusting film |
-
2011
- 2011-11-30 KR KR1020110127352A patent/KR20130060999A/en not_active Application Discontinuation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210064760A (en) * | 2019-11-26 | 2021-06-03 | 한국과학기술원 | Stretchable transparency-adjusting film, method for manufacturing transparency-adjusting film and smart window using the same |
| KR20210154389A (en) * | 2020-06-12 | 2021-12-21 | 한국과학기술원 | Stretchable transparency-adjusting film having an orientated heterogeneous interface, method for manufacturing the same and smart window having stretchable transparency-adjusting film |
| CN113192845A (en) * | 2021-03-30 | 2021-07-30 | 赛创电气（铜陵）有限公司 | Exposure development method of metal box dam, metal box dam and ceramic substrate |
| CN113192845B (en) * | 2021-03-30 | 2024-03-12 | 国瓷赛创电气(铜陵)有限公司 | Exposure development method of metal box dam, metal box dam and ceramic substrate |
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