TW201301342A - Method for forming pattern, and pattern structure - Google Patents
Method for forming pattern, and pattern structure Download PDFInfo
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- TW201301342A TW201301342A TW100120773A TW100120773A TW201301342A TW 201301342 A TW201301342 A TW 201301342A TW 100120773 A TW100120773 A TW 100120773A TW 100120773 A TW100120773 A TW 100120773A TW 201301342 A TW201301342 A TW 201301342A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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Abstract
Description
本發明涉及無需蝕刻工序形成圖案之方法及藉由這種圖案形成方法形成之圖案結構。The present invention relates to a method of forming a pattern without an etching process and a pattern structure formed by such a pattern forming method.
用於在基板上形成圖案之過去之光刻工序一般藉由三種方法進行。The past photolithography process for patterning on a substrate is generally performed by three methods.
第一種方法係藉由鍍敷薄膜、鍍敷光抗蝕劑、假硬化、曝光、真硬化、光抗蝕劑顯影、薄膜蝕刻、以及剝離光抗蝕劑之8個工序形成圖案。第二種方法係藉由鍍敷薄膜、黏貼DFR、曝光、顯影、蝕刻以及剝離之6個工序形成圖案之方法；第三種方法係藉由鍍敷薄膜、印刷抗蝕劑墨水、硬化、蝕刻以及剝離之5個工序形成圖案之方法。The first method forms a pattern by eight processes of plating a film, plating a photoresist, pseudo hardening, exposure, true hardening, photoresist development, thin film etching, and stripping of a photoresist. The second method is a method of forming a pattern by a process of plating a film, adhering DFR, exposing, developing, etching, and peeling; the third method is by plating a film, printing a resist ink, hardening, etching And a method of forming a pattern in five steps of peeling.
但是，這種過去之光刻工序至少需要進行5個以上之步驟才能形成圖案結構，所以在生產性或費用方面要求工序之簡單化。However, such a past photolithography process requires at least five or more steps to form a pattern structure, so that the simplification of the process is required in terms of productivity or cost.
本發明係為了解決如上述之問題而提出，本發明要解決之課題係提供一種無需蝕刻工序之圖案形成方法及結構，簡化圖案形成工序，最小化藥品使用，提高生產性並減少成本。The present invention has been made to solve the above problems, and an object of the present invention is to provide a pattern forming method and structure that do not require an etching process, to simplify a pattern forming process, to minimize drug use, to improve productivity, and to reduce costs.
用於實現上述課題之根據本發明一實施例之圖案形成方法包括：藉由光抗蝕劑(PR)在基板上形成圖案之步驟；在上述基板及上述圖案上方鍍敷薄膜之步驟；以及將上述圖案與鍍敷在上述圖案上方之薄膜一起剝離之步驟。A pattern forming method according to an embodiment of the present invention for achieving the above object includes: a step of forming a pattern on a substrate by a photoresist (PR); a step of plating a film over the substrate and the pattern; and The pattern is peeled off together with the film plated over the pattern.
形成上述圖案之步驟可以包括：在上述基板上方形成上述光抗蝕劑之步驟；藉由形成有圖案之掩膜對上述光抗蝕劑進行曝光之步驟；以及將上述曝光之光抗蝕劑顯影為上述圖案之步驟。The step of forming the pattern may include: forming the photoresist over the substrate; exposing the photoresist by forming a patterned mask; and developing the exposed photoresist The steps for the above pattern.
形成上述光抗蝕劑之步驟可以包括將上述光抗蝕劑假硬化之步驟；對上述光抗蝕劑曝光之步驟可以包括將上述光抗蝕劑真硬化之步驟。The step of forming the photoresist may include a step of pseudo-hardening the photoresist; and the step of exposing the photoresist may include a step of hardening the photoresist.
上述圖案可以形成為比上述薄膜厚。The above pattern may be formed to be thicker than the above film.
根據本發明一實施例之圖案結構，藉由根據本發明一實施例之圖案形成方法形成。A pattern structure according to an embodiment of the present invention is formed by a pattern forming method according to an embodiment of the present invention.
根據本發明另一實施例之圖案形成方法包括：藉由幹膜抗蝕劑在基板上方形成圖案之步驟；在上述基板及上述圖案上方鍍敷薄膜之步驟；以及將上述圖案與鍍敷在上述圖案上方之薄膜一起剝離之步驟。A pattern forming method according to another embodiment of the present invention includes: a step of forming a pattern over a substrate by a dry film resist; a step of plating a film over the substrate and the pattern; and plating and patterning the pattern The step of peeling off the film above the pattern together.
形成上述圖案之步驟可以包括：在上述基板上黏貼上述幹膜抗蝕劑之步驟；藉由形成有圖案之掩膜對上述幹膜抗蝕劑進行曝光之步驟；以及將上述曝光之幹膜抗蝕劑顯影為上述圖案之步驟。The step of forming the pattern may include: a step of adhering the dry film resist on the substrate; a step of exposing the dry film resist by forming a mask of a pattern; and resisting the dry film of the exposure The etchant is developed as the step of the above pattern.
上述幹膜抗蝕劑可以形成為比上述薄膜厚。The dry film resist described above may be formed to be thicker than the above film.
根據本發明另一實施例之圖案結構，藉由根據本發明另一實施例之圖案形成方法形成。A pattern structure according to another embodiment of the present invention is formed by a pattern forming method according to another embodiment of the present invention.
根據本發明另一實施例之圖案形成方法包括：藉由抗蝕劑墨水在基板上方形成圖案之步驟；在上述基板及上述圖案上方鍍敷薄膜之步驟；以及將上述圖案與鍍敷在上述圖案上方之薄膜一起剝離之步驟。A pattern forming method according to another embodiment of the present invention includes: a step of forming a pattern over a substrate by a resist ink; a step of plating a film over the substrate and the pattern; and plating the pattern on the pattern The step of peeling off the film together.
形成上述圖案之步驟可以包括：在上述基板上方印刷上述抗蝕劑墨水之步驟；將上述被印刷之抗蝕劑墨水進行硬化之步驟。The step of forming the pattern may include the step of printing the resist ink on the substrate; and the step of hardening the printed resist ink.
上述圖案可以形成為比上述薄膜厚。The above pattern may be formed to be thicker than the above film.
根據本發明另一實施例之圖案結構，藉由根據本發明另一實施例之圖案形成方法形成。A pattern structure according to another embodiment of the present invention is formed by a pattern forming method according to another embodiment of the present invention.
根據本發明，先形成圖案後進行薄膜鍍敷，從而不需要蝕刻工序，簡化工序，不需要對蝕刻設備之投資，可以最小化藥品使用，可以提高生產性及節省成本。According to the present invention, the pattern is formed and then the film is plated, so that the etching process is not required, the process is simplified, the investment in the etching apparatus is not required, the use of the drug can be minimized, and productivity and cost can be improved.
在以下，參照附圖詳細說明本發明之實施例。Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
本發明涉及利用先顯影圖案後蒸鍍薄膜之工序不利用蝕刻工序形成圖案之方法及藉由這種圖案形成方法製造之圖案結構。The present invention relates to a method of forming a pattern by an etching process using a process of first developing a pattern, and a pattern structure produced by the pattern forming method.
例如，本發明可以藉由鍍敷光抗蝕劑、假硬化、曝光、真硬化、顯影、薄膜鍍敷、剝離工序之7個工序形成圖案，或藉由黏貼幹膜抗蝕劑(DFR)、曝光、顯影、薄膜鍍敷、剝離之5個工序形成圖案，或者藉由印刷抗蝕劑墨水、硬化、薄膜鍍敷、剝離之4個工序形成圖案。For example, the present invention can form a pattern by seven steps of plating a photoresist, pseudo hardening, exposure, true hardening, development, thin film plating, and lift-off process, or by adhering a dry film resist (DFR), Patterns are formed in five steps of exposure, development, film plating, and peeling, or by four steps of printing resist ink, curing, film plating, and peeling.
即，若說過去之工序係首先鍍敷薄膜之後去除不需要之部分之薄膜來形成圖案之方式，則本發明係先形成圖案並僅在需要之部分鍍敷薄膜之方式。由此，優先形成圖案，所以不需要進行蝕刻，不需要蝕刻工序。That is, if the past process is a method in which an unnecessary portion of the film is first removed after plating the film to form a pattern, the present invention is a method of forming a pattern and plating the film only in a portion where it is required. Thereby, the pattern is preferentially formed, so etching is not required, and an etching process is not required.
這種圖案，可以藉由光抗蝕劑、幹膜抗蝕劑、或抗蝕劑墨水形成。即，本發明係用光抗蝕劑、幹膜抗蝕劑、或抗蝕劑墨水先形成圖案，若在其上方進行薄膜鍍敷之後去除光抗蝕劑、幹膜抗蝕劑、或抗蝕劑墨水，則鍍敷在其上方之薄膜一起被去除而形成圖案之方式。This pattern can be formed by a photoresist, a dry film resist, or a resist ink. That is, the present invention forms a pattern with a photoresist, a dry film resist, or a resist ink, and removes a photoresist, a dry film resist, or a resist after performing film plating thereon. The ink is applied in such a manner that the film coated thereon is removed together to form a pattern.
在此，主要以與利用光抗蝕劑之圖案形成方法有關之一實施例說明本發明之後，對於利用幹膜抗蝕劑或抗蝕劑墨水之圖案形成方法，主要以與利用光抗蝕劑之圖案形成方法之差異簡要進行說明。另外，對於相當於過去一般性工序之事項省略詳細的說明。Here, after explaining the present invention mainly in an embodiment relating to a pattern forming method using a photoresist, a pattern forming method using a dry film resist or a resist ink is mainly used with a photoresist. The difference in the pattern forming method will be briefly described. In addition, detailed description of the matters equivalent to the past general processes will be omitted.
圖1係按步驟表示根據本發明一實施例之圖案形成方法之流程圖，圖2係按步驟表示藉由根據本發明一實施例之圖案形成方法製造之圖案結構之概念圖。1 is a flow chart showing a pattern forming method according to an embodiment of the present invention, and FIG. 2 is a conceptual view showing a pattern structure manufactured by a pattern forming method according to an embodiment of the present invention.
圖1係關於圖案形成方法之圖，圖2係按步驟表示藉由圖案形成方法製造之圖案結構之圖，因此為了清楚地理解本發明，對根據本發明一實施例之圖案形成方法S100進行說明時，一邊引用圖2所示之具體之結構(附圖符號)一邊進行說明。1 is a view showing a pattern forming method, and FIG. 2 is a view showing a pattern structure manufactured by a pattern forming method in steps, and therefore, in order to clearly understand the present invention, a pattern forming method S100 according to an embodiment of the present invention will be described. The description will be made while referring to the specific structure (reference numeral) shown in FIG. 2.
若參考圖1及圖2，根據本發明一實施例之圖案形成方法S100包括：藉由光抗蝕劑(PR)110在基板200上方形成圖案11之步驟(S110至S150)、以及在圖案111上方鍍敷薄膜120之步驟(S160)、以及將圖案與鍍敷在圖案上方之薄膜123一起剝離之步驟(S170)。1 and 2, a pattern forming method S100 according to an embodiment of the present invention includes a step of forming a pattern 11 over a substrate 200 by a photoresist (PR) 110 (S110 to S150), and a pattern 111. The step of plating the film 120 on the upper side (S160), and the step of peeling off the pattern together with the film 123 plated on the pattern (S170).
在此，在基板200及圖案111上方鍍敷薄膜120表示如圖2之(c)所示在基板200上方之形成有圖案111之部位，在圖案111上方鍍敷薄膜123，在基板200上未形成圖案111之部位，在基板200上方鍍敷薄膜121。Here, the plating film 120 on the substrate 200 and the pattern 111 indicates a portion where the pattern 111 is formed over the substrate 200 as shown in FIG. 2(c), and the film 123 is plated over the pattern 111, and is not on the substrate 200. A portion of the pattern 111 is formed, and the film 121 is plated on the substrate 200.
另外，基板200一般可以係玻璃或合成樹脂材質。In addition, the substrate 200 may generally be made of glass or synthetic resin.
若參照圖1及圖2，形成圖案之步驟(S110至S150)包括在基板200上方形成光抗蝕劑110之步驟(S110)，藉由形成有圖案之掩膜將光抗蝕劑110曝光之步驟(S130)，以及將曝光之光抗蝕劑110顯影為圖案111之步驟。1 and 2, the step of forming a pattern (S110 to S150) includes the step of forming a photoresist 110 over the substrate 200 (S110), exposing the photoresist 110 by forming a patterned mask. Step (S130), and the step of developing the exposed photoresist 110 into the pattern 111.
在此，光抗蝕劑110可以藉由印刷、鍍敷或疊合方法形成在基板200上方。若舉例觀察，光抗蝕劑提供為液態，可以藉由旋塗等之方法塗敷。Here, the photoresist 110 may be formed over the substrate 200 by a printing, plating or lamination method. For example, the photoresist is provided in a liquid state and can be applied by spin coating or the like.
而且，掩膜之圖案形成根據光抗蝕劑為正類型或負類型而可以不同。正類型之光抗蝕劑之被曝光之部分化學分解，在顯影時被清洗出去，因此掩膜之被構圖之部分仍然成為光抗蝕劑圖案111，負類型之光抗蝕劑之被曝光之部分化學結合，未曝光之部分在顯影時被清洗出去，所以除掩膜之被構圖之部分以外之部分成為光抗蝕劑圖案111。在正類型之光抗蝕劑形成圖案111之情況更容易去除。Moreover, the pattern formation of the mask may be different depending on whether the photoresist is of a positive type or a negative type. The exposed portion of the positive type of photoresist is chemically decomposed and cleaned out during development, so that the patterned portion of the mask still becomes the photoresist pattern 111, and the negative type of photoresist is exposed. Partially chemically bonded, the unexposed portion is cleaned out during development, so that a portion other than the patterned portion of the mask becomes the photoresist pattern 111. It is easier to remove in the case of a positive type of photoresist forming pattern 111.
若參照圖1及圖2，形成光抗蝕劑之110之步驟S110包括假硬化光抗蝕劑100之步驟S120，對光抗蝕劑110曝光之步驟S130包括真硬化光抗蝕劑110之步驟S140。Referring to FIGS. 1 and 2, the step S110 of forming the photoresist 110 includes the step S120 of pseudo-hardening the photoresist 100, and the step S130 of exposing the photoresist 110 includes the step of hardening the photoresist 110. S140.
根據本發明，先形成圖案111而進行薄膜120之鍍敷，從而不需要蝕刻(etching)工序，從而簡化工序且不需要對蝕刻設備之投資，可以最小化藥品使用，提高生產性並節省成本。According to the present invention, the pattern 111 is first formed to perform the plating of the film 120, so that an etching process is not required, thereby simplifying the process and eliminating investment in etching equipment, minimizing the use of the medicine, improving productivity, and saving cost.
另外，圖案111可以形成為比薄膜120厚。In addition, the pattern 111 may be formed to be thicker than the film 120.
若參照圖2之(c)，為了鍍敷在基板200上方之薄膜121和鍍敷在光抗蝕劑圖案111上方之薄膜123相互分離形成，優選圖案111之高度比鍍敷薄膜120之高度厚。若圖案111之高度低於薄膜120之鍍敷高度，則鍍敷在基板200上方之薄膜121之上端和鍍敷在光抗蝕劑圖案111上方之薄膜123之下端相互抵接，要將圖案111與鍍敷在圖案111上方之薄膜123一起剝離時，有可能產生問題。Referring to FIG. 2(c), in order to form the film 121 plated over the substrate 200 and the film 123 plated over the photoresist pattern 111, the height of the pattern 111 is preferably thicker than the height of the plated film 120. . If the height of the pattern 111 is lower than the plating height of the film 120, the upper end of the film 121 plated on the substrate 200 and the lower end of the film 123 plated over the photoresist pattern 111 abut each other, and the pattern 111 is to be applied. When peeling off together with the film 123 plated on the pattern 111, there is a possibility that a problem occurs.
光抗蝕劑110可以藉由化學或物理方法去除。這時，所謂化學或物理方法可以為通常之多種方法中之一個以上。Photoresist 110 can be removed by chemical or physical means. In this case, the chemical or physical method may be one or more of the usual methods.
若參照圖2，根據本發明一實施例之圖案結構121藉由根據本發明一實施例之圖案形成方法S100製造。Referring to FIG. 2, a pattern structure 121 according to an embodiment of the present invention is fabricated by a pattern forming method S100 according to an embodiment of the present invention.
例如，在基板200上方進行光抗蝕劑110之鍍敷(圖2之(a))，將被鍍敷之光抗蝕劑110假硬化，利用形成有圖案之掩膜曝光而執行真硬化，將隨著圖案硬化之光抗蝕劑110顯影(圖2之(b))，在基板200及被構圖之光抗蝕劑111上鍍敷薄膜120(圖2之(c))，將光抗蝕劑111與鍍敷在光抗蝕劑111上方之薄膜123一起剝離(圖2之(d))，從而可以形成圖案結構121。For example, plating of the photoresist 110 is performed on the substrate 200 (Fig. 2(a)), the plated photoresist 110 is pseudo-hardened, and the hardening is performed by exposure of the mask in which the pattern is formed, The pattern-hardened photoresist 110 is developed (Fig. 2(b)), and the film 120 is plated on the substrate 200 and the patterned photoresist 111 (Fig. 2(c)), and the light resistance is applied. The etchant 111 is peeled off together with the film 123 plated over the photoresist 111 ((d) of FIG. 2), so that the pattern structure 121 can be formed.
另一方面，根據本發明其他實施例之圖案形成方法包括：藉由幹膜抗蝕劑在基板上方形成圖案之步驟，在基板及圖案上方鍍敷薄膜之步驟，以及將圖案與鍍敷在圖案上方之薄膜一起剝離之步驟。In another aspect, a pattern forming method according to other embodiments of the present invention includes the steps of: forming a pattern over a substrate by a dry film resist, plating a film over the substrate and the pattern, and patterning and plating the pattern The step of peeling off the film together.
即，根據本發明其他實施例之圖案形成方法，取代本發明一實施例之光抗蝕劑利用幹膜抗蝕劑在基板上方形成圖案。That is, according to the pattern forming method of the other embodiment of the present invention, the photoresist is replaced with a dry film resist to form a pattern on the substrate instead of the photoresist of an embodiment of the present invention.
幹膜抗蝕劑係使用於基板之電路、圖案形成之薄膜形態之抗蝕劑，例如可以藉由對塗敷在基底薄膜上之光抗蝕劑層進行乾燥之後，在光抗蝕劑層上疊合保護膜之方法製造。幹膜抗蝕劑主要使用於對抗蝕劑塗敷工序進行手工作業或難以機械加工之精密加工或大量加工相同圖案之情況。The dry film resist is a circuit used in a circuit of a substrate or a patterned film, for example, by drying a photoresist layer coated on a base film, and then on a photoresist layer. A method of laminating a protective film is produced. The dry film resist is mainly used in the case where the resist coating process is performed manually or is difficult to be machined, or the same pattern is processed in a large amount.
形成圖案之步驟包括在基板上方黏貼幹膜抗蝕劑之步驟，藉由形成有圖案之掩膜對幹膜抗蝕劑曝光之步驟，及將被曝光之幹膜抗蝕劑顯影為圖案之步驟。The step of patterning includes the steps of adhering a dry film resist over the substrate, the step of exposing the dry film resist by forming a patterned mask, and the step of developing the exposed dry film resist into a pattern. .
另外，利用幹膜抗蝕劑之根據本發明另一實施例之圖案形成方法根據幹膜抗蝕劑之特性可以不包括在利用光抗蝕劑之情況下包含之假硬化及真硬化步驟。Further, the pattern forming method according to another embodiment of the present invention using the dry film resist may not include the pseudo hardening and the true hardening step included in the case of using the photoresist depending on the characteristics of the dry film resist.
為了容易分離鍍敷在圖案上方之薄膜，幹膜抗蝕劑可以形成為比薄膜厚。另外，幹膜抗蝕劑可以藉由化學性或物理性之方法去除。In order to easily separate the film plated over the pattern, the dry film resist may be formed to be thicker than the film. In addition, the dry film resist can be removed by chemical or physical means.
根據本發明另一實施例之圖案結構藉由根據本發明另一實施例之圖案形成方法形成。A pattern structure according to another embodiment of the present invention is formed by a pattern forming method according to another embodiment of the present invention.
另一方面，根據本發明另一實施例之圖案形成方法包括藉由抗蝕劑墨水在基板上方形成圖案之步驟，在基板及圖案上方鍍敷薄膜之步驟，以及將圖案與鍍敷在圖案上之薄膜一起剝離之步驟。In another aspect, a pattern forming method according to another embodiment of the present invention includes the steps of forming a pattern over a substrate by a resist ink, plating a film over the substrate and the pattern, and plating the pattern on the pattern. The step of stripping the film together.
即，根據本發明另一實施例之圖案形成方法取代本發明一實施例中之光抗蝕劑而利用抗蝕劑墨水在基板上形成圖案。That is, the pattern forming method according to another embodiment of the present invention forms a pattern on the substrate by using the resist ink instead of the photoresist in an embodiment of the present invention.
形成圖案之步驟可以包括在基板上方印刷抗蝕劑墨水之步驟，及將印刷之抗蝕劑墨水硬化之步驟。The step of patterning may include the steps of printing a resist ink over the substrate and hardening the printed resist ink.
例如，利用印刷輥或利用絲網印刷方法在基板上方直接印刷抗蝕劑墨水之後進行硬化而形成抗蝕劑圖案。即，配合期望之圖案之形狀而在印刷輥上形成抗蝕劑墨水之後，使印刷輥作用於基板而在基板上方轉印抗蝕劑墨水，從而形成抗蝕劑圖案。For example, a resist pattern is formed by directly printing a resist ink on a substrate by a printing roll or by a screen printing method, followed by hardening. That is, after the resist ink is formed on the printing roller in accordance with the shape of the desired pattern, the printing roller is applied to the substrate to transfer the resist ink over the substrate to form a resist pattern.
另外，利用抗蝕劑墨水之根據本發明之另一實施例之圖案形成方法根據在基板上用抗蝕劑墨水直接進行圖案印刷之特性，可以不包括在利用光抗蝕劑之情況下包括之曝光及顯影步驟。In addition, the pattern forming method according to another embodiment of the present invention using the resist ink may be included in the case of using the resist ink directly on the substrate, and may be included in the case of using the photoresist. Exposure and development steps.
為了容易分離鍍敷在圖案上方之薄膜，圖案可以形成為比薄膜厚。另外，抗蝕劑墨水可以藉由化學或物理方法去除。In order to easily separate the film plated over the pattern, the pattern may be formed to be thicker than the film. In addition, the resist ink can be removed by chemical or physical means.
根據本發明另一實施例之圖案結構藉由根據本發明另一實施例之圖案形成方法形成。A pattern structure according to another embodiment of the present invention is formed by a pattern forming method according to another embodiment of the present invention.
在以上已說明本發明之實施例，但是本發明之申請專利範圍不限於此，還包括本發明所屬技術領域之普通技術人員根據本發明之實施例容易變更而被認為均等之範圍內之所有變更及修改。The embodiments of the present invention have been described above, but the scope of the present invention is not limited thereto, and all modifications within the scope of the present invention that are easily changed in accordance with the embodiments of the present invention are also included. And modify.
110．．．光抗蝕劑(PR)110. . . Photoresist (PR)
111．．．圖案111. . . pattern
120．．．薄膜120. . . film
121．．．薄膜121. . . film
123．．．薄膜123. . . film
200．．．基板200. . . Substrate
S100．．．方法S100. . . method
S110、S120、S130、S140、S150、S160、S170．．．步驟S110, S120, S130, S140, S150, S160, S170. . . step
圖1係按步驟表示根據本發明一實施例之圖案形成方法之流程圖；以及1 is a flow chart showing, in steps, a pattern forming method according to an embodiment of the present invention;
圖2係按步驟表示藉由根據本發明一實施例之圖案形成方法製造之圖案結構之概念圖。Fig. 2 is a conceptual view showing, by steps, a pattern structure manufactured by a pattern forming method according to an embodiment of the present invention.
S100．．．方法S100. . . method
S110、S120、S130、S140、S150、S160、S170．．．步驟S110, S120, S130, S140, S150, S160, S170. . . step
Claims (13)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100055875A KR20110136090A (en) | 2010-06-14 | 2010-06-14 | Method for forming pattern and structure by the same method |
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| Publication Number | Publication Date |
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| TW201301342A true TW201301342A (en) | 2013-01-01 |
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| TW100120773A TW201301342A (en) | 2010-06-14 | 2011-06-14 | Method for forming pattern, and pattern structure |
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| KR (1) | KR20110136090A (en) |
| TW (1) | TW201301342A (en) |
| WO (1) | WO2011159081A2 (en) |
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| KR100188251B1 (en) * | 1996-11-18 | 1999-06-01 | 윤종용 | Inkjet printer head manufacturing method |
| KR20060009166A (en) * | 2004-07-21 | 2006-01-31 | 삼성전자주식회사 | Method for manufacturing hard mask pattern |
| KR100690929B1 (en) * | 2006-05-03 | 2007-03-09 | 한국기계연구원 | Method for preparing a high resolution pattern with a high aspect ratio and the pattern thickness required by using a dry film resist |
| KR100970116B1 (en) * | 2008-03-19 | 2010-07-15 | 에이유텍 주식회사 | Manufacturing method for semiconductor array package |
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2010
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| WO2011159081A3 (en) | 2012-04-19 |
| KR20110136090A (en) | 2011-12-21 |
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