WO2011159081A2 - Method for forming pattern, and pattern structure - Google Patents

Method for forming pattern, and pattern structure Download PDF

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Publication number
WO2011159081A2
WO2011159081A2 PCT/KR2011/004334 KR2011004334W WO2011159081A2 WO 2011159081 A2 WO2011159081 A2 WO 2011159081A2 KR 2011004334 W KR2011004334 W KR 2011004334W WO 2011159081 A2 WO2011159081 A2 WO 2011159081A2
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WIPO (PCT)
Prior art keywords
pattern
thin film
forming
photoresist
substrate
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PCT/KR2011/004334
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French (fr)
Korean (ko)
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WO2011159081A3 (en
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한정훈
김기환
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일진디스플레이(주)
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Publication of WO2011159081A2 publication Critical patent/WO2011159081A2/en
Publication of WO2011159081A3 publication Critical patent/WO2011159081A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Definitions

  • the present invention relates to a method of forming a pattern without an etching process and a pattern structure formed by such a pattern forming method.
  • the first method is to form a pattern through eight processes of thin film coating, photoresist (PR) coating, temporary curing, exposure, real curing, photoresist development, thin film etching, and photoresist stripping.
  • the second method is to form a pattern through six processes of thin film coating, DFR adhesion, exposure, development, etching, and peeling.
  • the third method is 5 of thin film coating, resist ink printing, curing, etching, and peeling. It is a method of forming a pattern through the dog process.
  • the present invention has been created to solve the problems described above, the problem to be solved by the present invention is to simplify the pattern forming process and minimize the use of chemicals to improve the productivity and cost reduction pattern forming method and To provide a structure.
  • a pattern forming method includes: forming a pattern on a substrate through a photoresist (PR), coating a thin film on the substrate and the pattern, and forming the pattern. Peeling together with the thin film coated on the pattern.
  • PR photoresist
  • the forming of the pattern may include forming the photoresist on the substrate, exposing the photoresist through a mask on which the pattern is formed, and developing the exposed photoresist in the pattern. .
  • Forming the photoresist may include temporarily curing the photoresist, and exposing the photoresist may include main curing the photoresist.
  • the pattern may be formed thicker than the thin film.
  • the pattern structure according to one embodiment of the present invention is formed by a pattern forming method according to one embodiment of the present invention.
  • a pattern forming method includes forming a pattern on a substrate through a dry film resist (DFR), coating a thin film on the substrate and the pattern, and coating the pattern on the pattern. And peeling together.
  • DFR dry film resist
  • Forming the pattern includes attaching the dry film resist on the substrate, exposing the dry film resist through a patterned mask, and developing the exposed dry film resist in the pattern. can do.
  • the dry film resist may be formed thicker than the thin film.
  • the pattern structure according to another embodiment of the present invention is formed by the pattern forming method according to another embodiment of the present invention.
  • a method of forming a pattern on a substrate through resist ink, coating the thin film on the substrate and the pattern, and peeling the pattern together with the thin film coated on the pattern includes a step.
  • Forming the pattern may include printing the resist ink on the substrate, and curing the printed resist ink.
  • the pattern may be formed thicker than the thin film.
  • the pattern structure according to another embodiment of the present invention is formed by the pattern forming method according to another embodiment of the present invention.
  • the etching process is unnecessary, which simplifies the process, eliminates the investment in the etching equipment, minimizes the use of chemicals, increases productivity, and costs. Can be reduced.
  • FIG. 1 is a flowchart illustrating a step-by-step pattern forming method according to an embodiment of the present invention.
  • FIG. 2 is a conceptual diagram illustrating stepwise a pattern structure manufactured by a pattern forming method according to an embodiment of the present invention.
  • the present invention relates to a method of forming a pattern without using an etching process by using a process of first developing a pattern and then depositing a thin film, and a pattern structure manufactured through the pattern forming method.
  • the present invention forms a pattern in seven processes of photoresist coating, preliminary curing, exposure, real curing, developing, thin film coating, and peeling process, or attaches dry film resist (DFR), exposes, develops, thin film coating,
  • the pattern may be formed through five processes of peeling, or the pattern may be formed through four processes of resist ink printing, curing, thin film coating, and peeling.
  • the present invention is a method of forming a pattern to coat the thin film only the necessary portion first. Accordingly, since the pattern is preferentially formed, there is no need for etching, and the etching process is unnecessary.
  • This pattern may be formed through photoresist, dry film resist, or resist ink. That is, in the present invention, when a pattern is first formed with photoresist, dry film resist, or resist ink, and a thin film is coated thereon, and then the photoresist, dry film resist, or resist ink is removed, the coated film is removed together. This is how it is formed.
  • a pattern forming method using a dry film resist or a resist ink will be briefly described based on differences from the pattern forming method using a photoresist. .
  • detailed description about the matter corresponding to the conventional general process is abbreviate
  • FIG. 1 is a flowchart illustrating a step of forming a pattern according to an exemplary embodiment of the present invention
  • FIG. 2 is a conceptual diagram illustrating a step of a pattern structure manufactured by the method of forming a pattern according to an exemplary embodiment of the present invention.
  • FIG. 1 is a view of the pattern forming method
  • FIG. 2 is a view showing step by step the pattern structure manufactured by the pattern forming method, so that the pattern forming method according to an embodiment of the present invention for a clear understanding of the present invention (S100). ) Will be described with reference to the specific configuration (drawing number) shown in FIG. 2.
  • the coating of the thin film 120 on the substrate 200 and the pattern 111 is performed on the pattern 111 where the pattern 111 is formed on the substrate 200 as shown in FIG.
  • the thin film 123 is coated, and where the pattern 111 is not formed on the substrate 200, the thin film 121 is coated on the substrate 200.
  • the substrate 200 may generally be made of glass or synthetic resin.
  • the forming of the pattern may include forming the photoresist 110 on the substrate 200 (S110), and forming the photoresist 110 through the mask on which the pattern is formed. Exposing (S130), and developing the exposed photoresist 110 into the pattern 111.
  • the photoresist 110 may be formed on the substrate 200 by printing, coating, or lamination.
  • the photoresist may be provided in a liquid phase and applied by spin coating or the like.
  • the pattern formation of the mask may vary depending on whether the photoresist is a positive type or a negative type.
  • the positive type photoresist is chemically decomposed and washed out during development, so the patterned portion of the mask becomes the photoresist pattern 111 as it is, and in the negative type photoresist, the exposed portion is chemically bonded and exposed. Since the portion which is not developed is washed off during development, the portion except for the patterned portion of the mask becomes the photoresist pattern 111.
  • the case where the pattern 111 is formed in the positive type photoresist may be easier to remove.
  • the step of forming the photoresist 110 includes the step of temporarily curing the photoresist 110 (S120), and exposing the photoresist 110 (S130). ) May include step S140 of curing the photoresist 110.
  • the etching process is unnecessary, the process is simplified, the investment in the etching equipment is unnecessary, and the use of chemicals can be minimized. This can improve productivity and reduce costs.
  • the pattern 111 may be formed thicker than the thin film 120.
  • the height of the pattern 111 is increased. It is preferable that the thin film 120 is thicker than the height to be coated. When the height of the pattern 111 is lower than the coating height of the thin film 120, the upper end of the thin film 121 coated on the substrate 200 and the lower end of the thin film 123 coated on the photoresist pattern 111 may adhere to each other. This is because a problem may occur when the pattern 111 is peeled off together with the thin film 123 coated on the pattern 111.
  • the photoresist 110 may be removed through chemical or physical methods.
  • the chemical or physical method may be one or more of various conventional methods.
  • the pattern structure 121 according to an embodiment of the present invention is manufactured by the pattern forming method S100 according to an embodiment of the present invention.
  • the photoresist 110 may be coated on the substrate 200 (FIG. 2A), the photoresist 110 may be temporarily cured, exposed using a patterned mask, and the main curing may be performed. Then, the photoresist 110 cured according to the pattern is developed (FIG. 2B), and the thin film 120 is coated on the substrate 200 and the patterned photoresist 111 (FIG. 2C). ), And the pattern structure 121 may be formed by peeling the photoresist 111 together with the thin film 123 coated on the photoresist 111 (d) of FIG. 2.
  • the pattern forming method is a step of forming a pattern on a substrate through a dry film resist (DFR), coating a thin film on the substrate and the pattern, and the pattern with the thin film coated on the pattern Peeling off.
  • DFR dry film resist
  • the pattern forming method according to another embodiment of the present invention forms a pattern on the substrate by using a dry film resist instead of the photoresist in one embodiment of the present invention.
  • the dry film resist is a film-type resist used for forming a circuit and a pattern of a substrate.
  • the dry film resist may be manufactured by drying a photoresist layer applied on a base film and laminating a protective film to the photoresist layer. Dry film resists are mainly used in the case of precision processing, which is difficult in manual or mechanical processing, and in the case of mass processing of the same pattern.
  • Forming the pattern may include attaching a dry film resist on the substrate, exposing the dry film resist through a mask on which the pattern is formed, and developing the exposed dry film resist in a pattern.
  • the pattern forming method according to another embodiment of the present invention using a dry film resist may not include the temporary curing and the main curing step included in the case of using a photoresist due to the characteristics of the dry film resist.
  • the dry film resist may be formed thicker than the thin film for easy separation of the thin film coated on the pattern. Dry film resist can also be removed through chemical or physical methods.
  • the pattern structure according to another embodiment of the present invention is formed by the pattern forming method according to another embodiment of the present invention.
  • the pattern forming method comprises the steps of forming a pattern on the substrate through the resist ink, coating a thin film on the substrate and the pattern, and peeling the pattern together with the thin film coated on the pattern It includes.
  • the pattern forming method according to another embodiment of the present invention forms a pattern on the substrate by using resist ink instead of the photoresist in one embodiment of the present invention.
  • Forming the pattern may include printing resist ink on the substrate, and curing the printed resist ink.
  • a resist ink is directly printed on a substrate and then cured to form a resist pattern. That is, after the resist ink is formed on the printing roll so as to conform to the shape of the desired pattern, the printing roll is applied to the substrate to transfer the resist ink onto the substrate to form the resist pattern.
  • the pattern forming method according to another embodiment of the present invention using the resist ink may not include the exposure and development steps included in the case of using the photoresist because of the direct pattern printing with the resist ink on the substrate.
  • the pattern may be formed thicker than the thin film for easy separation of the thin film coated over the pattern. Resist inks may also be removed through chemical or physical methods.
  • the pattern structure according to another embodiment of the present invention is formed by the pattern forming method according to another embodiment of the present invention.
  • the present invention relates to a pattern forming method and has industrial applicability.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

The present invention relates to a method for forming a pattern without the etching step, and a pattern structure formed thereby. The method for forming a pattern comprises the steps: forming a pattern on a substrate through photoresist (PR); coating a thin film on the substrate and the pattern; and stripping the pattern together with the thin film coated on the pattern. According to the present invention, a pattern is formed in advance and then a thin film is coated, thereby requiring no etching step, and thus the process is simplified, the investment on etching equipment is not necessary, the use of chemicals can be minimized, productivity is improved and costs can be reduced.

Description

패턴 형성 방법 및 패턴 구조Pattern Forming Method and Pattern Structure
본 발명은 식각 공정 없이 패턴을 형성하는 방법 및 이러한 패턴 형성 방법에 의해 형성되는 패턴 구조에 관한 것이다.The present invention relates to a method of forming a pattern without an etching process and a pattern structure formed by such a pattern forming method.
기판 상에 패턴을 형성하기 위한 종래의 포토리소그라피(photolithography) 공정은 일반적으로 3가지의 방법에 의해 이루어져 왔다.Conventional photolithography processes for forming patterns on substrates have generally been accomplished by three methods.
박막 코팅, 포토레지스트(PR, PhotoResist) 코팅, 가경화, 노광, 본경화, 포토레지스트 현상, 박막 식각, 그리고 포토레지스트 박리의 8개 공정을 통해 패턴을 형성하는 방법이 첫 번째이다. 두 번째 방법은 박막 코팅, DFR 부착, 노광, 현상, 식각, 그리고 박리의 6개 공정을 통해 패턴을 형성하는 방법이며, 세 번째 방법은 박막 코팅, 레지스트 잉크 인쇄, 경화, 식각, 그리고 박리의 5개 공정을 통해 패턴을 형성하는 방법이다.The first method is to form a pattern through eight processes of thin film coating, photoresist (PR) coating, temporary curing, exposure, real curing, photoresist development, thin film etching, and photoresist stripping. The second method is to form a pattern through six processes of thin film coating, DFR adhesion, exposure, development, etching, and peeling. The third method is 5 of thin film coating, resist ink printing, curing, etching, and peeling. It is a method of forming a pattern through the dog process.
다만 이러한 종래의 포토리소그라피 공정은 적어도 5 이상의 단계가 진행되어야 패턴 구조가 형성될 수 있으므로, 생산성이나 비용 측면에서 공정의 단순화가 요구되어 왔다.However, in the conventional photolithography process, since at least five or more steps may be performed to form a pattern structure, a process simplification has been required in terms of productivity or cost.
본 발명은 전술한 바와 같은 문제점들을 해결하기 위해 창출된 것으로서, 본 발명이 해결하고자 하는 과제는 패턴 형성 공정을 단순화하고 약품 사용을 최소화하여 생산성이 향상되고 원가가 절감되는 식각 공정 없는 패턴 형성 방법 및 구조를 제공하는 것이다.The present invention has been created to solve the problems described above, the problem to be solved by the present invention is to simplify the pattern forming process and minimize the use of chemicals to improve the productivity and cost reduction pattern forming method and To provide a structure.
상기한 과제를 달성하기 위한 본 발명의 한 실시예에 따른 패턴 형성 방법은 포토레지스트(PR)를 통해 기판 위에 패턴을 형성하는 단계, 상기 기판 및 상기 패턴 위에 박막을 코팅하는 단계, 그리고 상기 패턴을 상기 패턴 위에 코팅된 박막과 함께 박리하는 단계를 포함한다.According to one or more exemplary embodiments, a pattern forming method includes: forming a pattern on a substrate through a photoresist (PR), coating a thin film on the substrate and the pattern, and forming the pattern. Peeling together with the thin film coated on the pattern.
상기 패턴을 형성하는 단계는 상기 기판 위에 상기 포토레지스트를 형성하는 단계, 패턴이 형성된 마스크를 통해 상기 포토레지스트를 노광하는 단계, 그리고 상기 노광된 포토레지스트를 상기 패턴으로 현상하는 단계를 포함할 수 있다.The forming of the pattern may include forming the photoresist on the substrate, exposing the photoresist through a mask on which the pattern is formed, and developing the exposed photoresist in the pattern. .
상기 포토레지스트를 형성하는 단계는 상기 포토레지스트를 가경화하는 단계를 포함하고, 상기 포토레지스트를 노광하는 단계는 상기 포토레지스트를 본경화하는 단계를 포함할 수 있다.Forming the photoresist may include temporarily curing the photoresist, and exposing the photoresist may include main curing the photoresist.
상기 패턴은 상기 박막보다 두껍게 형성될 수 있다.The pattern may be formed thicker than the thin film.
본 발명의 한 실시예에 다른 패턴 구조는 본 발명의 한 실시예에 따른 패턴 형성 방법에 의하여 형성된다.The pattern structure according to one embodiment of the present invention is formed by a pattern forming method according to one embodiment of the present invention.
본 발명의 다른 실시예에 따른 패턴 형성 방법은 드라이필름 레지스트(DFR)를 통해 기판 위에 패턴을 형성하는 단계, 상기 기판 및 상기 패턴 위에 박막을 코팅하는 단계, 그리고 상기 패턴을 상기 패턴 위에 코팅된 박막과 함께 박리하는 단계를 포함한다.According to another embodiment of the present invention, a pattern forming method includes forming a pattern on a substrate through a dry film resist (DFR), coating a thin film on the substrate and the pattern, and coating the pattern on the pattern. And peeling together.
상기 패턴을 형성하는 단계는 상기 기판 위에 상기 드라이필름 레지스트를 부착하는 단계, 패턴이 형성된 마스크를 통해 상기 드라이필름 레지스트를 노광하는 단계, 그리고 상기 노광된 드라이필름 레지스트를 상기 패턴으로 현상하는 단계를 포함할 수 있다.Forming the pattern includes attaching the dry film resist on the substrate, exposing the dry film resist through a patterned mask, and developing the exposed dry film resist in the pattern. can do.
상기 드라이필름 레지스트는 상기 박막보다 두껍게 형성될 수 있다.The dry film resist may be formed thicker than the thin film.
본 발명의 다른 실시예에 따른 패턴 구조는 본 발명의 다른 실시예에 따른 패턴 형성 방법에 의하여 형성된다.The pattern structure according to another embodiment of the present invention is formed by the pattern forming method according to another embodiment of the present invention.
본 발명의 또 다른 실시예에 따른 패턴 형성 방법은 레지스트 잉크를 통해 기판 위에 패턴을 형성하는 단계, 상기 기판 및 상기 패턴 위에 박막을 코팅하는 단계, 그리고 상기 패턴을 상기 패턴 위에 코팅된 박막과 함께 박리하는 단계를 포함한다.According to still another aspect of the present invention, there is provided a method of forming a pattern on a substrate through resist ink, coating the thin film on the substrate and the pattern, and peeling the pattern together with the thin film coated on the pattern. It includes a step.
상기 패턴을 형성하는 단계는 상기 기판 위에 상기 레지스트 잉크를 인쇄하는 단계, 그리고 상기 인쇄된 레지스트 잉크를 경화하는 단계를 포함할 수 있다.Forming the pattern may include printing the resist ink on the substrate, and curing the printed resist ink.
상기 패턴은 상기 박막보다 두껍게 형성될 수 있다.The pattern may be formed thicker than the thin film.
본 발명의 또 다른 실시예에 따른 패턴 구조는 본 발명의 또 다른 실시예에 따른 패턴 형성 방법에 의하여 형성된다.The pattern structure according to another embodiment of the present invention is formed by the pattern forming method according to another embodiment of the present invention.
본 발명에 의하면, 먼저 패턴을 형성하고 박막 코팅을 하도록 함으로써, 식각(etching) 공정이 불필요해져 공정이 단순화되고 에칭 설비에 대한 투자가 불필요해지며 약품 사용을 최소화할 수 있고, 생산성이 향상되며 원가가 절감될 수 있다.According to the present invention, by first forming a pattern and coating a thin film, the etching process is unnecessary, which simplifies the process, eliminates the investment in the etching equipment, minimizes the use of chemicals, increases productivity, and costs. Can be reduced.
도 1은 본 발명의 한 실시예에 따른 패턴 형성 방법을 단계적으로 나타낸 흐름도이다.1 is a flowchart illustrating a step-by-step pattern forming method according to an embodiment of the present invention.
도 2는 본 발명의 한 실시예에 따른 패턴 형성 방법에 의해 제조되는 패턴 구조를 단계적으로 나타낸 개념도이다.FIG. 2 is a conceptual diagram illustrating stepwise a pattern structure manufactured by a pattern forming method according to an embodiment of the present invention. FIG.
이하에서 본 발명의 실시예를 첨부된 도면을 참조로 상세히 설명한다.Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
본 발명은 패턴을 먼저 현상한 후 박막을 증착하는 공정을 이용하여 식각 공정을 이용하지 않고 패턴을 형성하는 방법 및 이러한 패턴 형성 방법을 통해 제조된 패턴 구조에 관한 것이다.The present invention relates to a method of forming a pattern without using an etching process by using a process of first developing a pattern and then depositing a thin film, and a pattern structure manufactured through the pattern forming method.
예시적으로 본 발명은 포토레지스트 코팅, 가경화, 노광, 본경화, 현상, 박막 코팅, 박리 공정의 7개 공정으로 패턴을 형성하거나, 드라이필름 레지스트(DFR) 부착, 노광, 현상, 박막 코팅, 박리의 5개 공정을 통해 패턴을 형성하거나, 또는 레지스트 잉크 인쇄, 경화, 박막 코팅, 박리의 4개 공정을 통해 패턴을 형성할 수 있다.By way of example, the present invention forms a pattern in seven processes of photoresist coating, preliminary curing, exposure, real curing, developing, thin film coating, and peeling process, or attaches dry film resist (DFR), exposes, develops, thin film coating, The pattern may be formed through five processes of peeling, or the pattern may be formed through four processes of resist ink printing, curing, thin film coating, and peeling.
즉 종래의 공정은 우선 박막을 코팅한 뒤에 불필요한 부분의 박막을 제거하여 패턴을 형성하는 방식이라면, 본 발명은 우선 패턴을 형성하여 필요한 부분에만 박막이 코팅되도록 하는 방식이다. 이에 따라 패턴이 우선적으로 형성되므로 식각을 할 필요가 없어져 식각 공정이 불필요하게 된다.In other words, if the conventional process is a method of forming a pattern by first removing the unnecessary portion of the thin film after coating the thin film, the present invention is a method of forming a pattern to coat the thin film only the necessary portion first. Accordingly, since the pattern is preferentially formed, there is no need for etching, and the etching process is unnecessary.
이러한 패턴은 포토레지스트, 드라이필름 레지스트, 또는 레지스트 잉크를 통해 형성될 수 있다. 즉 본 발명은 포토레지스트, 드라이필름 레지스트, 또는 레지스트 잉크로 먼저 패턴을 형성하고 그 위에 박막 코팅을 한 뒤 포토레지스트, 드라이필름 레지스트, 또는 레지스트 잉크를 제거하면 그 위에 코팅된 박막이 함께 제거됨으로써 패턴이 형성되는 방식이다.This pattern may be formed through photoresist, dry film resist, or resist ink. That is, in the present invention, when a pattern is first formed with photoresist, dry film resist, or resist ink, and a thin film is coated thereon, and then the photoresist, dry film resist, or resist ink is removed, the coated film is removed together. This is how it is formed.
여기서는 포토레지스트에 의한 패턴 형성 방법에 관한 일 실시예를 위주로 본 발명을 설명한 후, 드라이필름 레지스트나 레지스트 잉크에 의한 패턴 형성 방법에 대해서는 포토레지스트에 의한 패턴 형성 방법과의 차이점 위주로 간략히 설명하기로 한다. 또한 종래의 일반적인 공정에 해당되는 사항에 대해서는 상세한 설명은 생략한다.Here, after describing the present invention with reference to an embodiment of a pattern forming method using a photoresist, a pattern forming method using a dry film resist or a resist ink will be briefly described based on differences from the pattern forming method using a photoresist. . In addition, detailed description about the matter corresponding to the conventional general process is abbreviate | omitted.
도 1은 본 발명의 한 실시예에 따른 패턴 형성 방법을 단계적으로 나타낸 흐름도이고, 도 2는 본 발명의 한 실시예에 따른 패턴 형성 방법에 의해 제조되는 패턴 구조를 단계적으로 나타낸 개념도이다.1 is a flowchart illustrating a step of forming a pattern according to an exemplary embodiment of the present invention, and FIG. 2 is a conceptual diagram illustrating a step of a pattern structure manufactured by the method of forming a pattern according to an exemplary embodiment of the present invention.
도 1은 패턴 형성 방법에 관한 도면이고, 도 2는 패턴 형성 방법에 의해 제조되는 패턴 구조를 단계적으로 나타낸 도면이므로, 본 발명의 명확한 이해를 위해 본 발명의 한 실시예에 따른 패턴 형성 방법(S100)에 관한 설명에 있어서 도 2에 도시된 구체적인 구성(도면 번호)을 인용하면서 설명하기로 한다.1 is a view of the pattern forming method, and FIG. 2 is a view showing step by step the pattern structure manufactured by the pattern forming method, so that the pattern forming method according to an embodiment of the present invention for a clear understanding of the present invention (S100). ) Will be described with reference to the specific configuration (drawing number) shown in FIG. 2.
도 1 및 도 2를 참고하면, 본 발명의 한 실시예에 따른 패턴 형성 방법(S100)은 포토레지스트(PR)(110)를 통해 기판(200) 위에 패턴(111)을 형성하는 단계(S110 내지 S150), 기판(200) 및 패턴(111) 위에 박막(120)을 코팅하는 단계(S160), 그리고 패턴을 패턴 위에 코팅된 박막(123)과 함께 박리하는 단계(S170)를 포함한다.1 and 2, in the method of forming a pattern (S100) according to an embodiment of the present invention, forming the pattern 111 on the substrate 200 through the photoresist (PR) 110 (S110 to S). S150, coating the thin film 120 on the substrate 200 and the pattern 111 (S160), and peeling the pattern together with the thin film 123 coated on the pattern (S170).
여기서 기판(200) 및 패턴(111) 위에 박막(120)을 코팅한다는 것은 도 2의 (c)에 나타난 바와 같이 기판(200) 위에 패턴(111)이 형성되어 있는 곳에는 패턴(111)의 위에 박막(123)이 코팅되고, 기판(200) 위에 패턴(111)이 형성되어 있지 않은 곳에는 기판(200)의 위에 박막(121)이 코팅됨을 의미한다.The coating of the thin film 120 on the substrate 200 and the pattern 111 is performed on the pattern 111 where the pattern 111 is formed on the substrate 200 as shown in FIG. The thin film 123 is coated, and where the pattern 111 is not formed on the substrate 200, the thin film 121 is coated on the substrate 200.
또한 기판(200)은 일반적으로 유리 또는 합성수지 재질일 수 있다.In addition, the substrate 200 may generally be made of glass or synthetic resin.
도 1 및 도 2를 참고하면, 패턴을 형성하는 단계(S110 내지 S150)는 기판(200) 위에 포토레지스트(110)를 형성하는 단계(S110), 패턴이 형성된 마스크를 통해 포토레지스트(110)를 노광하는 단계(S130), 그리고 노광된 포토레지스트(110)를 패턴(111)으로 현상하는 단계를 포함할 수 있다.1 and 2, the forming of the pattern (S110 through S150) may include forming the photoresist 110 on the substrate 200 (S110), and forming the photoresist 110 through the mask on which the pattern is formed. Exposing (S130), and developing the exposed photoresist 110 into the pattern 111.
여기서 포토레지스트(110)는 인쇄, 코팅, 또는 라미네이션(lamination) 방법을 통해 기판(200) 위에 형성될 수 있다. 예시적으로 살피면, 포토레지스트는 액상으로 제공되어 스핀 코팅 등의 방법으로 도포될 수 있다.The photoresist 110 may be formed on the substrate 200 by printing, coating, or lamination. By way of example, the photoresist may be provided in a liquid phase and applied by spin coating or the like.
그리고 마스크의 패턴 형성은 포토레지스트가 포지티브(positive) 타입인지 네거티브(negative) 타입인지에 따라 달라질 수 있다. 포지티브 타입의 포토레지스트는 노광된 부분이 화학적으로 분해되어 현상 시 씻겨나가므로 마스크의 패턴된 부분이 그대로 포토레지스트 패턴(111)이 되고, 네거티브 타입의 포토레지스트는 노광된 부분이 화학적으로 결합되고 노광되지 않은 부분이 현상 시 씻겨나가므로 마스크의 패턴된 부분을 제외한 부분이 포토레지스트 패턴(111)이 된다. 포지티브 타입의 포토레지스트에 패턴(111)을 형성한 경우가 더 제거하기 용이할 수 있다.The pattern formation of the mask may vary depending on whether the photoresist is a positive type or a negative type. The positive type photoresist is chemically decomposed and washed out during development, so the patterned portion of the mask becomes the photoresist pattern 111 as it is, and in the negative type photoresist, the exposed portion is chemically bonded and exposed. Since the portion which is not developed is washed off during development, the portion except for the patterned portion of the mask becomes the photoresist pattern 111. The case where the pattern 111 is formed in the positive type photoresist may be easier to remove.
도 1 및 도 2를 참고하면, 포토레지스트(110)를 형성하는 단계(S110)는 포토레지스트(110)를 가경화하는 단계(S120)를 포함하고, 포토레지스트(110)를 노광하는 단계(S130)는 포토레지스트(110)를 본경화하는 단계(S140)를 포함할 수 있다.1 and 2, the step of forming the photoresist 110 (S110) includes the step of temporarily curing the photoresist 110 (S120), and exposing the photoresist 110 (S130). ) May include step S140 of curing the photoresist 110.
본 발명에 의하면, 먼저 패턴(111)을 형성하고 박막(120) 코팅을 하도록 함으로써, 식각(etching) 공정이 불필요해져 공정이 단순화되고 에칭 설비에 대한 투자가 불필요해지며 약품 사용을 최소화할 수 있고, 생산성이 향상되며 원가가 절감될 수 있다.According to the present invention, by first forming the pattern 111 and coating the thin film 120, the etching process is unnecessary, the process is simplified, the investment in the etching equipment is unnecessary, and the use of chemicals can be minimized. This can improve productivity and reduce costs.
또한 패턴(111)은 박막(120)보다 두껍게 형성될 수 있다.In addition, the pattern 111 may be formed thicker than the thin film 120.
도 2의 (c)를 참고하면, 기판(200) 위에 코팅되는 박막(121)과 포토레지스트 패턴(111) 위에 코팅되는 박막(123)이 서로 분리되도록 형성되기 위해서는, 패턴(111)의 높이가 박막(120)이 코팅되는 높이보다 두꺼운 것이 바람직하다. 패턴(111)의 높이가 박막(120)의 코팅 높이보다 낮으면 기판(200) 위에 코팅되는 박막(121)의 상단과 포토레지스트 패턴(111) 위에 코팅되는 박막(123)의 하단이 서로 맞붙게 되어, 패턴(111)을 패턴(111) 위에 코팅된 박막(123)과 함께 박리하고자 할 때 문제가 발생할 수 있기 때문이다.Referring to FIG. 2C, in order to form the thin film 121 coated on the substrate 200 and the thin film 123 coated on the photoresist pattern 111 to be separated from each other, the height of the pattern 111 is increased. It is preferable that the thin film 120 is thicker than the height to be coated. When the height of the pattern 111 is lower than the coating height of the thin film 120, the upper end of the thin film 121 coated on the substrate 200 and the lower end of the thin film 123 coated on the photoresist pattern 111 may adhere to each other. This is because a problem may occur when the pattern 111 is peeled off together with the thin film 123 coated on the pattern 111.
포토레지스트(110)는 화학적 또는 물리적인 방법을 통해 제거될 수 있다. 이때 화학적 또는 물리적인 방법이라 함은 통상의 다양한 방법 중 하나 이상이 될 수 있다.The photoresist 110 may be removed through chemical or physical methods. In this case, the chemical or physical method may be one or more of various conventional methods.
도 2를 참고하면, 본 발명의 한 실시예에 따른 패턴 구조(121)는 본 발명의 한 실시예에 따른 패턴 형성 방법(S100)에 의하여 제조된다.Referring to FIG. 2, the pattern structure 121 according to an embodiment of the present invention is manufactured by the pattern forming method S100 according to an embodiment of the present invention.
예시적으로, 기판(200) 위에 포토레지스트(110) 코팅(도 2의 (a))을 하고, 코팅된 포토레지스트(110)를 가경화하고 패턴이 형성된 마스크를 이용하여 노광하며 본경화를 수행하고, 패턴에 따라 경화된 포토레지스트(110)를 현상(도 2의 (b))하며, 기판(200) 및 패턴화된 포토레지스트(111) 위에 박막(120)을 코팅(도 2의 (c))하고, 포토레지스트(111)를 포토레지스트(111) 위에 코팅된 박막(123)과 함께 박리(도 2의 (d))함으로써 패턴 구조(121)가 형성될 수 있다.For example, the photoresist 110 may be coated on the substrate 200 (FIG. 2A), the photoresist 110 may be temporarily cured, exposed using a patterned mask, and the main curing may be performed. Then, the photoresist 110 cured according to the pattern is developed (FIG. 2B), and the thin film 120 is coated on the substrate 200 and the patterned photoresist 111 (FIG. 2C). ), And the pattern structure 121 may be formed by peeling the photoresist 111 together with the thin film 123 coated on the photoresist 111 (d) of FIG. 2.
한편, 본 발명의 다른 실시예에 따른 패턴 형성 방법은 드라이필름 레지스트(DFR)를 통해 기판 위에 패턴을 형성하는 단계, 기판 및 패턴 위에 박막을 코팅하는 단계, 그리고 패턴을 패턴 위에 코팅된 박막과 함께 박리하는 단계를 포함한다.On the other hand, the pattern forming method according to another embodiment of the present invention is a step of forming a pattern on a substrate through a dry film resist (DFR), coating a thin film on the substrate and the pattern, and the pattern with the thin film coated on the pattern Peeling off.
즉 본 발명의 다른 실시예에 따른 패턴 형성 방법은 본 발명의 한 실시예에 있어서의 포토레지스트 대신에 드라이필름 레지스트를 이용하여 기판 위에 패턴을 형성한다.That is, the pattern forming method according to another embodiment of the present invention forms a pattern on the substrate by using a dry film resist instead of the photoresist in one embodiment of the present invention.
드라이필름 레지스트는 기판의 회로, 패턴 형성에 사용되는 필름 형태의 레지스트로, 예시적으로 베이스 필름 상에 도포된 포토레지스트 층을 건조한 후 보호필름을 포토레지스트 층에 라미네이션하는 방법으로 제조될 수 있다. 드라이필름 레지스트는 레지스트 도포 공정에 대해 수작업이나 기계 가공에서는 어려운 정밀 가공이나 같은 패턴을 대량 가공하는 경우에 주로 사용되고 있다.The dry film resist is a film-type resist used for forming a circuit and a pattern of a substrate. For example, the dry film resist may be manufactured by drying a photoresist layer applied on a base film and laminating a protective film to the photoresist layer. Dry film resists are mainly used in the case of precision processing, which is difficult in manual or mechanical processing, and in the case of mass processing of the same pattern.
패턴을 형성하는 단계는 기판 위에 드라이필름 레지스트를 부착하는 단계, 패턴이 형성된 마스크를 통해 드라이필름 레지스트를 노광하는 단계, 그리고 노광된 드라이필름 레지스트를 패턴으로 현상하는 단계를 포함할 수 있다.Forming the pattern may include attaching a dry film resist on the substrate, exposing the dry film resist through a mask on which the pattern is formed, and developing the exposed dry film resist in a pattern.
또한 드라이필름 레지스트를 이용하는 본 발명의 다른 실시예에 따른 패턴 형성 방법은 드라이필름 레지스트의 특성상 포토레지스트를 이용하는 경우에 포함되는 가경화 및 본경화 단계를 포함하지 않을 수 있다.In addition, the pattern forming method according to another embodiment of the present invention using a dry film resist may not include the temporary curing and the main curing step included in the case of using a photoresist due to the characteristics of the dry film resist.
패턴 위에 코팅되는 박막의 쉬운 분리를 위해 드라이필름 레지스트는 박막보다 두껍게 형성될 수 있다. 또한 드라이필름 레지스트는 화학적 또는 물리적인 방법을 통해 제거될 수 있다.The dry film resist may be formed thicker than the thin film for easy separation of the thin film coated on the pattern. Dry film resist can also be removed through chemical or physical methods.
본 발명의 다른 실시예에 따른 패턴 구조는 본 발명의 다른 실시예에 따른 패턴 형성 방법에 의하여 형성된다.The pattern structure according to another embodiment of the present invention is formed by the pattern forming method according to another embodiment of the present invention.
한편, 본 발명의 또 다른 실시예에 따른 패턴 형성 방법은 레지스트 잉크를 통해 기판 위에 패턴을 형성하는 단계, 기판 및 패턴 위에 박막을 코팅하는 단계, 그리고 패턴을 패턴 위에 코팅된 박막과 함께 박리하는 단계를 포함한다.On the other hand, the pattern forming method according to another embodiment of the present invention comprises the steps of forming a pattern on the substrate through the resist ink, coating a thin film on the substrate and the pattern, and peeling the pattern together with the thin film coated on the pattern It includes.
즉 본 발명의 또 다른 실시예에 따른 패턴 형성 방법은 본 발명의 한 실시예에 있어서의 포토레지스트 대신에 레지스트 잉크를 이용하여 기판 위에 패턴을 형성한다.That is, the pattern forming method according to another embodiment of the present invention forms a pattern on the substrate by using resist ink instead of the photoresist in one embodiment of the present invention.
패턴을 형성하는 단계는 기판 위에 레지스트 잉크를 인쇄하는 단계, 그리고 인쇄된 레지스트 잉크를 경화하는 단계를 포함할 수 있다.Forming the pattern may include printing resist ink on the substrate, and curing the printed resist ink.
예시적으로, 인쇄 롤을 이용하거나 또는 스크린 인쇄 방법을 이용하여 기판 위에 레지스트 잉크를 직접 인쇄한 후 경화하여 레지스트 패턴을 형성하는 것이다. 즉 원하는 패턴의 형상에 맞도록 레지스트 잉크를 인쇄 롤에 형성한 후, 인쇄 롤을 기판에 작용시켜 기판 위에 레지스트 잉크를 전사함으로써 레지스트 패턴을 형성한다.For example, by using a printing roll or a screen printing method, a resist ink is directly printed on a substrate and then cured to form a resist pattern. That is, after the resist ink is formed on the printing roll so as to conform to the shape of the desired pattern, the printing roll is applied to the substrate to transfer the resist ink onto the substrate to form the resist pattern.
또한 레지스트 잉크를 이용하는 본 발명의 다른 실시예에 따른 패턴 형성 방법은 기판 상에 레지스트 잉크로 직접적인 패턴 인쇄를 한다는 특성상 포토레지스트를 이용하는 경우에 포함되는 노광 및 현상 단계를 포함하지 않을 수 있다.In addition, the pattern forming method according to another embodiment of the present invention using the resist ink may not include the exposure and development steps included in the case of using the photoresist because of the direct pattern printing with the resist ink on the substrate.
패턴 위에 코팅되는 박막의 쉬운 분리를 위해 패턴은 박막보다 두껍게 형성될 수 있다. 또한 레지스트 잉크는 화학적 또는 물리적인 방법을 통해 제거될 수 있다.The pattern may be formed thicker than the thin film for easy separation of the thin film coated over the pattern. Resist inks may also be removed through chemical or physical methods.
본 발명의 또 다른 실시예에 따른 패턴 구조는 본 발명의 또 다른 실시예에 따른 패턴 형성 방법에 의하여 형성된다.The pattern structure according to another embodiment of the present invention is formed by the pattern forming method according to another embodiment of the present invention.
이상에서 본 발명의 실시예를 설명하였으나, 본 발명의 권리범위는 이에 한정되지 아니하며 본 발명의 실시예로부터 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에 의해 용이하게 변경되어 균등한 것으로 인정되는 범위의 모든 변경 및 수정을 포함한다.Although the embodiments of the present invention have been described above, the scope of the present invention is not limited thereto, and it is recognized that the present invention is easily changed and equivalent by those skilled in the art to which the present invention pertains. Includes all changes and modifications to the scope of the matter.
본 발명은 패턴 형성 방법에 관한 것으로 산업상 이용가능성이 있다.The present invention relates to a pattern forming method and has industrial applicability.

Claims (13)

  1. 포토레지스트(PR)를 통해 기판 위에 패턴을 형성하는 단계,Forming a pattern on the substrate through the photoresist (PR),
    상기 기판 및 상기 패턴 위에 박막을 코팅하는 단계, 그리고Coating a thin film on the substrate and the pattern, and
    상기 패턴을 상기 패턴 위에 코팅된 박막과 함께 박리하는 단계를 포함하는 패턴 형성 방법.Peeling the pattern together with the thin film coated on the pattern.
  2. 제1항에서,In claim 1,
    상기 패턴을 형성하는 단계는Forming the pattern
    상기 기판 위에 상기 포토레지스트를 형성하는 단계, Forming the photoresist on the substrate,
    패턴이 형성된 마스크를 통해 상기 포토레지스트를 노광하는 단계, 그리고Exposing the photoresist through a patterned mask, and
    상기 노광된 포토레지스트를 상기 패턴으로 현상하는 단계를 포함하는 패턴 형성 방법.And developing the exposed photoresist in the pattern.
  3. 제2항에서,In claim 2,
    상기 포토레지스트를 형성하는 단계는 상기 포토레지스트를 가경화하는 단계를 포함하고,Forming the photoresist comprises temporarily curing the photoresist,
    상기 포토레지스트를 노광하는 단계는 상기 포토레지스트를 본경화하는 단계를 포함하는 패턴 형성 방법.Exposing the photoresist comprises completely curing the photoresist.
  4. 제1항에서,In claim 1,
    상기 패턴은 상기 박막보다 두껍게 형성되는 패턴 형성 방법.The pattern forming method is formed thicker than the thin film.
  5. 제1항 내지 제4항 중 어느 한 항의 패턴 형성 방법에 의하여 형성되는 패턴 구조.The pattern structure formed by the pattern formation method in any one of Claims 1-4.
  6. 드라이필름 레지스트(DFR)를 통해 기판 위에 패턴을 형성하는 단계,Forming a pattern on the substrate through a dry film resist (DFR),
    상기 기판 및 상기 패턴 위에 박막을 코팅하는 단계, 그리고Coating a thin film on the substrate and the pattern, and
    상기 패턴을 상기 패턴 위에 코팅된 박막과 함께 박리하는 단계를 포함하는 패턴 형성 방법.Peeling the pattern together with the thin film coated on the pattern.
  7. 제6항에서,In claim 6,
    상기 패턴을 형성하는 단계는Forming the pattern
    상기 기판 위에 상기 드라이필름 레지스트를 부착하는 단계, Attaching the dry film resist on the substrate;
    패턴이 형성된 마스크를 통해 상기 드라이필름 레지스트를 노광하는 단계, 그리고Exposing the dry film resist through a patterned mask, and
    상기 노광된 드라이필름 레지스트를 상기 패턴으로 현상하는 단계를 포함하는 패턴 형성 방법.And developing the exposed dry film resist in the pattern.
  8. 제6항에서,In claim 6,
    상기 드라이필름 레지스트는 상기 박막보다 두껍게 형성되는 패턴 형성 방법.The dry film resist is formed pattern thicker than the thin film.
  9. 제6항 내지 제8항 중 어느 한 항의 패턴 형성 방법에 의하여 형성되는 패턴 구조.The pattern structure formed by the pattern formation method of any one of Claims 6-8.
  10. 레지스트 잉크를 통해 기판 위에 패턴을 형성하는 단계,Forming a pattern on the substrate through the resist ink,
    상기 기판 및 상기 패턴 위에 박막을 코팅하는 단계, 그리고Coating a thin film on the substrate and the pattern, and
    상기 패턴을 상기 패턴 위에 코팅된 박막과 함께 박리하는 단계를 포함하는 패턴 형성 방법.Peeling the pattern together with the thin film coated on the pattern.
  11. 제10항에서,In claim 10,
    상기 패턴을 형성하는 단계는Forming the pattern
    상기 기판 위에 상기 레지스트 잉크를 인쇄하는 단계, 그리고Printing the resist ink on the substrate, and
    상기 인쇄된 레지스트 잉크를 경화하는 단계를 포함하는 패턴 형성 방법.And curing the printed resist ink.
  12. 제10항에서,In claim 10,
    상기 패턴은 상기 박막보다 두껍게 형성되는 패턴 형성 방법.The pattern forming method is formed thicker than the thin film.
  13. 제10항 내지 제12항 중 어느 한 항의 패턴 형성 방법에 의하여 형성되는 패턴 구조.The pattern structure formed by the pattern formation method of any one of Claims 10-12.
PCT/KR2011/004334 2010-06-14 2011-06-14 Method for forming pattern, and pattern structure WO2011159081A2 (en)

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KR102149795B1 (en) * 2013-12-13 2020-08-31 삼성전기주식회사 Resist film and methods of forming a pattern

Citations (4)

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Publication number Priority date Publication date Assignee Title
KR19980036426A (en) * 1996-11-18 1998-08-05 김광호 Inkjet Printhead Manufacturing Method
KR20060009166A (en) * 2004-07-21 2006-01-31 삼성전자주식회사 Method for manufacturing hard mask pattern
KR100690929B1 (en) * 2006-05-03 2007-03-09 한국기계연구원 Method for preparing a high resolution pattern with a high aspect ratio and the pattern thickness required by using a dry film resist
KR20090100025A (en) * 2008-03-19 2009-09-23 에이유텍 주식회사 Manufacturing method for semiconductor array package

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980036426A (en) * 1996-11-18 1998-08-05 김광호 Inkjet Printhead Manufacturing Method
KR20060009166A (en) * 2004-07-21 2006-01-31 삼성전자주식회사 Method for manufacturing hard mask pattern
KR100690929B1 (en) * 2006-05-03 2007-03-09 한국기계연구원 Method for preparing a high resolution pattern with a high aspect ratio and the pattern thickness required by using a dry film resist
KR20090100025A (en) * 2008-03-19 2009-09-23 에이유텍 주식회사 Manufacturing method for semiconductor array package

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