WO2011159081A3 - Method for forming pattern, and pattern structure - Google Patents

Method for forming pattern, and pattern structure Download PDF

Info

Publication number
WO2011159081A3
WO2011159081A3 PCT/KR2011/004334 KR2011004334W WO2011159081A3 WO 2011159081 A3 WO2011159081 A3 WO 2011159081A3 KR 2011004334 W KR2011004334 W KR 2011004334W WO 2011159081 A3 WO2011159081 A3 WO 2011159081A3
Authority
WO
WIPO (PCT)
Prior art keywords
pattern
forming
thin film
substrate
coated
Prior art date
Application number
PCT/KR2011/004334
Other languages
French (fr)
Korean (ko)
Other versions
WO2011159081A2 (en
Inventor
한정훈
김기환
Original Assignee
일진디스플레이(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 일진디스플레이(주) filed Critical 일진디스플레이(주)
Publication of WO2011159081A2 publication Critical patent/WO2011159081A2/en
Publication of WO2011159081A3 publication Critical patent/WO2011159081A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • G03F7/2018—Masking pattern obtained by selective application of an ink or a toner, e.g. ink jet printing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

The present invention relates to a method for forming a pattern without the etching step, and a pattern structure formed thereby. The method for forming a pattern comprises the steps: forming a pattern on a substrate through photoresist (PR); coating a thin film on the substrate and the pattern; and stripping the pattern together with the thin film coated on the pattern. According to the present invention, a pattern is formed in advance and then a thin film is coated, thereby requiring no etching step, and thus the process is simplified, the investment on etching equipment is not necessary, the use of chemicals can be minimized, productivity is improved and costs can be reduced.
PCT/KR2011/004334 2010-06-14 2011-06-14 Method for forming pattern, and pattern structure WO2011159081A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0055875 2010-06-14
KR1020100055875A KR20110136090A (en) 2010-06-14 2010-06-14 Method for forming pattern and structure by the same method

Publications (2)

Publication Number Publication Date
WO2011159081A2 WO2011159081A2 (en) 2011-12-22
WO2011159081A3 true WO2011159081A3 (en) 2012-04-19

Family

ID=45348732

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/004334 WO2011159081A2 (en) 2010-06-14 2011-06-14 Method for forming pattern, and pattern structure

Country Status (3)

Country Link
KR (1) KR20110136090A (en)
TW (1) TW201301342A (en)
WO (1) WO2011159081A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102149795B1 (en) * 2013-12-13 2020-08-31 삼성전기주식회사 Resist film and methods of forming a pattern

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980036426A (en) * 1996-11-18 1998-08-05 김광호 Inkjet Printhead Manufacturing Method
KR20060009166A (en) * 2004-07-21 2006-01-31 삼성전자주식회사 Method for manufacturing hard mask pattern
KR100690929B1 (en) * 2006-05-03 2007-03-09 한국기계연구원 Method for preparing a high resolution pattern with a high aspect ratio and the pattern thickness required by using a dry film resist
KR20090100025A (en) * 2008-03-19 2009-09-23 에이유텍 주식회사 Manufacturing method for semiconductor array package

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980036426A (en) * 1996-11-18 1998-08-05 김광호 Inkjet Printhead Manufacturing Method
KR20060009166A (en) * 2004-07-21 2006-01-31 삼성전자주식회사 Method for manufacturing hard mask pattern
KR100690929B1 (en) * 2006-05-03 2007-03-09 한국기계연구원 Method for preparing a high resolution pattern with a high aspect ratio and the pattern thickness required by using a dry film resist
KR20090100025A (en) * 2008-03-19 2009-09-23 에이유텍 주식회사 Manufacturing method for semiconductor array package

Also Published As

Publication number Publication date
WO2011159081A2 (en) 2011-12-22
KR20110136090A (en) 2011-12-21
TW201301342A (en) 2013-01-01

Similar Documents

Publication Publication Date Title
WO2013093504A3 (en) Etched silicon structures, method of forming etched silicon structures and uses thereof
WO2012141293A3 (en) Laminate, production method therefor, and method of creating device structure using laminate
WO2013140177A3 (en) Etched silicon structures, method of forming etched silicon structures and uses thereof
WO2009085598A3 (en) Photoresist double patterning
WO2008143885A3 (en) Protection layer for fabricating a solar cell
WO2009085564A3 (en) Etch with high etch rate resist mask
WO2010088267A3 (en) Method and apparatus for etching
WO2012028695A3 (en) Method for depositing nanoparticles on substrates
WO2012173790A3 (en) Hybrid laser and plasma etch wafer dicing using substrate carrier
TW201129497A (en) silicon substrate having nanostructures and method for producing the same and application thereof
EP2388826A3 (en) Method of forming current tracks on semiconductors
WO2010002736A3 (en) Methods for fabricating line/space routing between c4 pads
UA100712C2 (en) Method for producing an enamelled steel substrate
WO2011092017A8 (en) Method for producing a coated item by means of texture etching
WO2012051618A3 (en) Method for producing gallium nitride substrates for electronic and optoelectronic devices
WO2012082955A3 (en) Etched wafers and methods of forming the same
WO2013012195A3 (en) Method for manufacturing substrate and method or manufacturing electronic device using same
WO2011133349A3 (en) Methods for etching silicon-based antireflective layers
WO2012083944A3 (en) Method for producing silicon solar cells having a front-sided texture and a smooth rear side surface
WO2013134242A8 (en) Method of manufacturing polymer nanopillars by anodic aluminum oxide membrane and imprint process
WO2011159081A3 (en) Method for forming pattern, and pattern structure
WO2010098624A3 (en) Substrate having uneven portion thereon, and method for manufacturing solar cell using the same
WO2009142947A3 (en) Helium descumming
WO2012177789A3 (en) Integrated process modulation for psg gapfill
US11664235B2 (en) Photoresist removal

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11795947

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11795947

Country of ref document: EP

Kind code of ref document: A2