WO2013012195A3 - Method for manufacturing substrate and method or manufacturing electronic device using same - Google Patents
Method for manufacturing substrate and method or manufacturing electronic device using same Download PDFInfo
- Publication number
- WO2013012195A3 WO2013012195A3 PCT/KR2012/005466 KR2012005466W WO2013012195A3 WO 2013012195 A3 WO2013012195 A3 WO 2013012195A3 KR 2012005466 W KR2012005466 W KR 2012005466W WO 2013012195 A3 WO2013012195 A3 WO 2013012195A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- forming
- metal layer
- manufacturing
- substrate
- electronic device
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 title abstract 3
- 239000002184 metal Substances 0.000 abstract 5
- 229910044991 metal oxide Inorganic materials 0.000 abstract 2
- 150000004706 metal oxides Chemical class 0.000 abstract 2
- 239000002253 acid Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The present invention relates to a method for significantly reduce manufacturing cost of an electronic device by selectively forming a nano-dimple on a metal layer that is patterned at a low cost. The method, according to the present invention comprises the steps of: (a) forming the metal layer on a substrate; (b) forming a mask layer, which is provided with a predetermined pattern, on the metal layer; (c) forming a metal oxide having self-alignment nano-holes on the metal layer, which is exposed, by submerging the substrate in an acid solution and applying a voltage; and (d) forming the nano-dimple on the metal layer by removing the metal oxide by means of etching.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20110071331A KR101243635B1 (en) | 2011-07-19 | 2011-07-19 | Method of manufacturing a substrate and method of manufacturing an electronic device using the same |
KR10-2011-0071331 | 2011-07-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2013012195A2 WO2013012195A2 (en) | 2013-01-24 |
WO2013012195A3 true WO2013012195A3 (en) | 2013-03-14 |
Family
ID=47558573
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2012/005466 WO2013012195A2 (en) | 2011-07-19 | 2012-07-10 | Method for manufacturing substrate and method or manufacturing electronic device using same |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR101243635B1 (en) |
WO (1) | WO2013012195A2 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10767143B2 (en) | 2014-03-06 | 2020-09-08 | Sage Electrochromics, Inc. | Particle removal from electrochromic films using non-aqueous fluids |
KR101585788B1 (en) * | 2014-08-28 | 2016-01-15 | 주식회사 포스코 | Method for manufacturing substrate for electronic device and thin film solar cell |
KR101651341B1 (en) * | 2014-12-02 | 2016-08-26 | 한양대학교 에리카산학협력단 | method of fabricating superhydrophobic metal structure |
KR101683796B1 (en) * | 2015-06-11 | 2016-12-08 | 한국과학기술연구원 | Method for curing polymer by using intense pulsed white light and method for manufacturing organic thin film transistor using the same |
KR101785468B1 (en) * | 2016-02-05 | 2017-10-16 | 호서대학교 산학협력단 | Method of manufacturing semiconductor thin film transistor and semiconductor thin film transistor manufactured by the method |
WO2018236785A1 (en) * | 2017-06-20 | 2018-12-27 | Board Of Trustees Of The University Of Arkansas | Method of forming high surface area metal oxide nanostructures and applications of same |
CN107622974A (en) * | 2017-08-28 | 2018-01-23 | 武汉华星光电半导体显示技术有限公司 | The preparation method of TFT substrate and the preparation method of TFT display devices |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20080110709A (en) * | 2007-06-16 | 2008-12-19 | 고려대학교 산학협력단 | Method for manufacturing hybrid nano-imprint mask and method for manufacturing electro-device using the same |
KR20090005889A (en) * | 2007-07-10 | 2009-01-14 | 호서대학교 산학협력단 | Method for fabricating nano particle |
KR20100002486A (en) * | 2008-06-30 | 2010-01-07 | 서울옵토디바이스주식회사 | Patterned substrate and nitride based semiconductor layer fabrication method |
KR20110034710A (en) * | 2009-09-29 | 2011-04-06 | 광주과학기술원 | Method of forming pattern |
-
2011
- 2011-07-19 KR KR20110071331A patent/KR101243635B1/en not_active IP Right Cessation
-
2012
- 2012-07-10 WO PCT/KR2012/005466 patent/WO2013012195A2/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20080110709A (en) * | 2007-06-16 | 2008-12-19 | 고려대학교 산학협력단 | Method for manufacturing hybrid nano-imprint mask and method for manufacturing electro-device using the same |
KR20090005889A (en) * | 2007-07-10 | 2009-01-14 | 호서대학교 산학협력단 | Method for fabricating nano particle |
KR20100002486A (en) * | 2008-06-30 | 2010-01-07 | 서울옵토디바이스주식회사 | Patterned substrate and nitride based semiconductor layer fabrication method |
KR20110034710A (en) * | 2009-09-29 | 2011-04-06 | 광주과학기술원 | Method of forming pattern |
Also Published As
Publication number | Publication date |
---|---|
WO2013012195A2 (en) | 2013-01-24 |
KR101243635B1 (en) | 2013-03-15 |
KR20130010603A (en) | 2013-01-29 |
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