JP2010262959A - Forming method of wiring pattern - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To suppress and prevent a filling defect of a photosensitive wiring paste layer to a recess of an imprint mold and occurrence of collapse and peeling of a wiring pattern in the wet etching (phenomenon) process and to efficiently form the highly precise wiring pattern. <P>SOLUTION: A forming method of the wiring pattern includes the process for forming the photosensitive wiring paste layer 2, the process for depressing the imprint mold 3 having an uneven pattern 17 to the photosensitive wiring paste layer 2 and the process for removing a non-photosensitive part of the photosensitive wiring paste layer 2 by wet etching and forming the wiring pattern corresponding to the uneven pattern of the imprint mold. Thickness tp of the photosensitive wiring paste layer 2 is regulated in a range of a following formula (1). Formula (1) 6 μm+(V/S)<tp<20 μm+(V/S). However tp: thickness of the photosensitive wiring paste layer, S: an area of a paste transfer region, V: a volume of a recess in a region which is brought into contact with the photosensitive wiring paste layer in the uneven pattern. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a method for forming a wiring pattern, and more particularly to a method for forming a wiring pattern by an optical imprint method using an imprint mold having a concavo-convex pattern formed on the surface thereof.

  In recent years, an optical imprint method has been used as a method for forming a fine pattern in various electronic component manufacturing processes.

  As a method of manufacturing a semiconductor device using such an optical imprinting method, as shown in FIGS. 20A to 20D, a concavo-convex pattern 110 having a concave portion 101a and a convex portion 101b is provided, and the convex portion 101b is shielded from light. The mold 101 (FIG. 20A) provided with the film 101 c is pressed against a negative photoresist (transfer material) 102 disposed on the substrate 103, and the irradiation light 107 is applied to the photoresist 102 through the mold 101. After selectively irradiating (FIG. 20B), the photoresist 102 is developed to remove the region (residual film) 102a (FIG. 20C) that is not irradiated with the irradiation light 107 of the photoresist 102. Thus, a method of manufacturing a semiconductor device including a step of patterning the photoresist 102 to form a resist pattern 102b (FIG. 20D) has been proposed. That.

  That is, in this method, a light transmissive mold 101 having a light shielding film 101c on the convex portion 101b is employed, and a resist pattern 102b is formed by combining a negative photoresist 102 as a photo-curing resin, and the convex portion 101b. By removing the unexposed portion (residual film) of the photoresist 102 (resist pattern) after the mold 101 is pressed by the light-shielding film 101c formed in (1), a fine pattern can be formed.

However, in the optical imprint method as described above,
(1) For example, as shown in FIG. 21, when the material to be transferred 202 (photoresist for forming a resist pattern, photosensitive wiring paste for forming a wiring pattern, etc.) is thin, It is known that a defective filling of the transfer material 202 may occur and a defect 202b may occur in the pattern 202a.

(2) If the transfer material 202 is thick, the residual film 202c after the imprint mold is pressed becomes thick as shown in FIG. In the case of pattern formation by the photoimprint method, the thicker the remaining film 202c, the longer the development time for removing the remaining film 202c, and the transferred material 202 constituting the pattern 202a is altered by the developer. There is a problem in that dissolution of the unexposed portion 202d in the lower portion of the pattern 202a (see FIG. 22B) proceeds excessively.
Further, when the dissolution of the unexposed portion 202d in the lower portion of the pattern 202a further proceeds, the pattern 202a becomes unstable, and when the pattern 202a is a fine wiring pattern, there is a problem that collapse or peeling occurs. In addition, since the conductive paste for forming the wiring pattern is difficult to transmit light and has a shallow curing depth, so-called side etching is likely to occur and problems are likely to occur.

  (3) In addition, the optimum thickness of the material to be transferred, such as photoresist and photosensitive wiring paste, has a pattern dependency, and it is necessary to determine the conditions every time the pattern shape is changed, resulting in poor productivity. There is.

JP 2003-272998 A

  The present invention solves the above problems, and suppresses and prevents the filling failure of the photosensitive wiring paste layer into the recesses of the imprint mold and the occurrence of collapse or peeling of the wiring pattern in the wet etching (development) process. In addition, an object of the present invention is to provide a method of forming a wiring pattern that can reduce the time required for setting conditions when the pattern shape is changed and can efficiently form a highly accurate wiring pattern. And

In order to solve the above problems, a method for forming a wiring pattern of the present invention includes:
Applying a photosensitive wiring paste to form a photosensitive wiring paste layer; and
A step of pressing an imprint mold having a predetermined concavo-convex pattern and having a light-shielding film formed on the surface of the convex portion against the photosensitive wiring paste layer, and irradiating the photosensitive wiring paste layer with light through the imprint mold;
Forming a predetermined wiring pattern by removing a non-light-cured unexposed portion of the photosensitive wiring paste layer by wet etching, and a wiring pattern forming method comprising:
The thickness tp of the photosensitive wiring paste layer is defined in the range of the following formula (1).
6 μm + (V / S) <tp <20 μm + (V / S) (1)
However,
tp: the thickness of the photosensitive wiring paste layer,
S: area of paste transfer region,
V: Volume of the concave portion in the region of the concave / convex pattern in contact with the photosensitive wiring paste layer

The area of the paste transfer region: S and the volume V of the recess in the above formula (1) will be described below with reference to the drawings.
First, the area S of the paste transfer region in the formula (1) is an area of a region corresponding to the region where the uneven pattern 17 of the imprint mold 3 is formed and the region where the photosensitive wiring paste layer 2 is disposed. .
Further, as shown in FIG. 18A, the volume V of the concave portion in the formula (1) is a region where the uneven pattern 17 of the imprint mold 3 is formed, that is, a photosensitive wiring paste application region, that is, a photosensitive property. When it is larger than the plane area of the wiring paste layer 2, it is the total volume of all the concave portions 5 a existing in the region facing the photosensitive wiring paste layer 2 of the concave-convex pattern 17 on the lower surface side of the imprint mold 3. In FIG. 18 (a), the total volume of the recesses 5a ₁ and 5a ₂ is obtained. Note that the volume of the concave portion 5a outside the region facing the photosensitive wiring paste layer 2 is not included in V (the volume of the concave portion) in Expression (1).

On the other hand, as shown in FIG. 18B, the region where the uneven pattern 17 of the imprint mold 3 is formed is smaller than the region where the photosensitive wiring paste is applied, that is, the planar area of the photosensitive wiring paste layer 2. In the above formula (1), V (the volume of the concave portion) is the sum of the volumes of all the concave portions 5a existing in the formation region of the concave / convex pattern 17 on the lower surface side of the imprint mold 3, and in FIG. The sum of the volumes of the central recesses 5a ₁ and 5a ₂ and the peripheral recesses 5a ₃ and 5a ₄ is obtained. In other words, V (volume of the recess) in the above formula (1) is the volume of each of the center-side recesses (complete recesses) 5a ₁ and 5a ₂ and the peripheral recesses (incomplete recesses) 5a ₃ and 5a _4. The total value of

Further, the method for forming a wiring pattern of the present invention includes
A method of forming a wiring pattern having a multilayer structure in which a plurality of wiring patterns are laminated via an insulating layer,
(a) forming a wiring pattern by the method according to claim 1;
(b) forming an insulating layer so as to cover the wiring pattern;
and (c) forming a wiring pattern on the insulating layer by the method according to claim 1.

  In the present invention, it is desirable that the photosensitive wiring paste is mainly composed of Ag.

The wiring pattern forming method of the present invention includes a step of forming a photosensitive wiring paste layer, a step of pressing the imprint mold against the photosensitive wiring paste layer, and irradiating the photosensitive wiring paste layer with light through the imprint mold, In the method for forming a wiring pattern comprising a step of forming a wiring pattern by removing an unexposed portion of the photosensitive wiring paste layer by wet etching, the thickness tp of the photosensitive wiring paste layer is expressed by the following formula (1):
6 μm + (V / S) <tp <20 μm + (V / S) (1)
(Where tp is the thickness of the photosensitive wiring paste layer, S is the area of the paste transfer region, and V is the volume of the recess in the region of the concavo-convex pattern in contact with the photosensitive wiring paste layer).
Therefore, it is possible to suppress and prevent poor wiring formation due to poor filling of the imprint mold recesses and collapse of the wiring pattern during the development (wet etching) process. Become.

  That is, by setting the thickness of the photosensitive wiring paste layer to an appropriate thickness, in the development process after pressing the imprint mold and irradiating with light, the wiring pattern due to excessive dissolution of the unexposed portion below the wiring pattern It is possible to suppress and prevent the occurrence of collapse and peeling, and to form a highly reliable and highly reliable wiring pattern even when a fine wiring pattern is formed.

  In addition, according to the present invention, it is possible to reduce the man-hours for setting conditions such as the optimum thickness of the photosensitive wiring paste layer when the wiring pattern to be formed is changed, thereby improving productivity. Is possible.

In the present invention, the thickness (tp) of the photosensitive wiring paste layer satisfies the requirement of tp> 6 μm + (V / S), thereby suppressing or preventing the occurrence of defective filling in the recesses of the imprint mold. It becomes possible.
Further, when the thickness (tp) of the photosensitive wiring paste layer satisfies the requirement of tp <20 μm + (V / S), wiring due to dissolution of the unexposed portion of the photosensitive wiring paste layer in the development (wet etching) step It is possible to suppress or prevent the occurrence of collapse or peeling.

In addition, when the thickness (tp) of the photosensitive wiring paste layer is tp <6 μm + (V / S), defective filling of the photosensitive wiring paste layer into the concave portion occurs.
Further, when the thickness (tp) of the photosensitive wiring paste layer is 20 μm + (V / S) <tp, the unexposed portion of the photosensitive wiring paste layer is dissolved in the development (wet etching) process, and the wiring pattern Form defects occur.

  In addition, the said Formula (1) of this invention is the relationship between the area S of a paste transfer area | region, and the volume V of the recessed part 5a of the imprint mold 3, as typically shown to Fig.19 (a), for example. It has been confirmed that this holds true from when the value of V / S is large to when the value of V / S is small, as schematically shown in FIG.

  The wiring pattern forming method of the present invention includes (a) a step of forming a wiring pattern by the method according to claim 1, (b) a step of forming an insulating layer so as to cover the wiring pattern, c) forming a wiring pattern by the method according to claim 1 on the insulating layer, so that the wiring pattern having a multilayer structure in which a plurality of wiring patterns are stacked via the insulating layer can be efficiently obtained. In addition, it can be reliably formed.

  In addition, when the photosensitive wiring paste is mainly composed of Ag, an electronic component having a good characteristic including a low resistance wiring formed using the photosensitive wiring paste can be manufactured economically with a high yield.

It is a figure which shows the structure of the to-be-molded body which has arrange | positioned the photosensitive wiring paste layer on the board | substrate used for implementing the imprint method of Example 1 of this invention. It is a figure which shows the structure of the imprint mold used in order to implement the imprint method of Example 1 of this invention. It is a figure which shows notionally the state which is pressing the imprint mold to the to-be-molded body of FIG. It is a figure which shows the detailed structure at the time of pressing the imprint mold to a to-be-molded body. It is a figure which shows the exposure process after the imprint process of FIG. 4 is complete | finished. It is a figure which shows the state which removed the imprint mold after completion | finish of the exposure process of FIG. It is a figure which shows the wiring pattern obtained by removing an uncured film (residual film) by development. It is a figure which shows the structure of the to-be-molded body used in order to implement the imprint method of the other Example (Example 2) of this invention. It is a figure which shows the state which is pressing the imprint mold to the to-be-molded body of FIG. In Example 2, it is a figure which shows the exposure process to the electrically conductive paste for wiring of the 1st layer after the imprint. It is a figure which shows the state which removed the imprint mold after completion | finish of the exposure process of FIG. It is a figure which shows the wiring pattern obtained by removing an uncured film (residual film) by development. It is a figure which shows the process of forming the insulating pattern of the 2nd layer. It is a figure which shows the state which formed the through-hole for via holes in the insulating pattern of the 2nd layer. It is a figure which shows the exposure process to the insulating pattern of the uppermost layer (3rd layer). FIG. 16 is a diagram showing a state in which dicing is performed and divided into individual chips after completion of the exposure process of FIG. 15. It is a figure which shows typically the structure of the multilayer electronic component (multilayer coil component) manufactured by the method concerning Example 2 of this invention. It is a figure for demonstrating the area S of a paste transcription | transfer area | region, and the volume V of a recessed part, (a) is a case where the area | region in which the uneven | corrugated pattern of the imprint mold was formed is larger than the application | coating area | region of the photosensitive wiring paste. FIG. 4 is a diagram for explaining an area S of a paste transfer region and a volume V of a recess, where (a) is a paste when the region where the uneven pattern of the imprint mold is formed is smaller than the region where the photosensitive wiring paste is applied. It is a figure explaining the area S of a transfer area | region, and the volume V of a recessed part. (a) is a diagram schematically showing a case where the value of V / S, which is the relationship between the area S of the paste transfer region and the volume S of the concave portion of the imprint mold, is large, and (b) is a diagram showing the area S of the paste transfer region and the imprint mold area. It is a figure which shows typically the case where the value of V / S which is the relationship of the volume S of the recessed part of a print mold is small. It is a figure which shows the conventional optical imprint method. In the optical imprint method, it is a figure explaining the problem when the thickness of the material to be transferred (photoresist for forming a resist pattern, photosensitive wiring paste for forming a wiring pattern, etc.) is thin. (a) is a figure which shows the state where the thickness of the residual film after pressing the imprint mold became thick, (b) is a figure explaining the problem which arises when the thickness of a residual film is thick.

  Embodiments of the present invention will be described below to describe the features of the present invention in more detail.

(1) First, as shown in FIG. 1, a photosensitive wiring paste was applied to a substrate 1 so as to have a thickness (tp) in the range of the following formula (1). A molding object 10 is formed.
6 μm + (V / S) <tp <20 μm + (V / S) (1)
tp: the thickness of the photosensitive wiring paste layer,
S: area of paste transfer region,
V: Volume of the recess in the region (pattern transfer region) in contact with the photosensitive wiring paste layer of the uneven pattern of the imprint mold Note that, as the photosensitive wiring paste, a photosensitive conductive paste having thermoplasticity, for example, a photosensitive Ag paste Is used.
As a coating method, for example, a method such as printing can be used.

  (2) Then, the imprint mold 3 (FIG. 2) is overlaid so that the concave-convex pattern forming surface 4 faces the photosensitive wiring paste layer 2 as shown in FIG. While pressing (pressing) the photosensitive wiring paste layer 2 with a pressure of 5 MPa.

  As shown in FIG. 2, the imprint mold 3 is formed by processing, for example, 1.5 mm thick quartz by RIE, and a desired concavo-convex pattern 17 having a concave portion 5a and a convex portion 5b (for example, a step of 50 μm). And a film having a light-shielding property (light-shielding film) 16 such as a Ni film is used.

  Here, the imprint mold 3 is pressed onto the photosensitive wiring paste layer 2 at a pressure of 5 MPa while being heated to 100 ° C. The heating temperature at this time is included in the photosensitive wiring paste layer 2 ( The resin may have a temperature range that is equal to or higher than the glass transition temperature (Tg) of the resin and the photosensitive wiring paste layer 2 (resin contained therein) is not thermally cured. If Tg is below room temperature, you may press at room temperature.

  Moreover, the pressure at the time of a press should just be a range which can form a desired uneven | corrugated pattern in the photosensitive wiring paste layer 2 (transfer).

  Further, at this time, as shown in FIG. 4, each between the first stage 11 supporting the substrate 1 and the substrate 1, and between the imprint mold 3 and the second stage 21 positioned above the imprint mold 3. Alternatively, the imprint mold 3 may be pressed with the cushioning materials 15 and 25 installed. The buffer materials 15 and 25 may be the same buffer material or different buffer materials.

(3) Then, the imprint mold 3 and the photosensitive wiring paste layer 2 are cooled, and the photosensitive wiring paste layer 2 is exposed and cured with an exposure amount of 500 mJ / cm ² (FIG. 5).
The exposure amount is determined by the sensitivity of the photocurable material used for the photosensitive wiring paste layer 2. It is appropriate usually ^{10mJ / cm 2 ~2000mJ / cm 2} .
In some cases, the exposure may be performed before the above cooling is completed.

  (4) The imprint mold 3 is released from the molding target 10. As a result, as shown in FIGS. 5 and 6, a photosensitive wiring paste layer 2 on the substrate 1 is molded into a shape corresponding to the shape of the concave portion 5 a of the imprint mold 3 and is photocured (wiring). (Pattern) 2a and the uncured region (uncured film) 2b thinned by being pressed by the convex portion 5b of the mold 3 for optical imprinting remain.

  (5) Then, the uncured film (residual film) 2b (FIG. 6) is removed by wet etching (development) to obtain the wiring pattern 2a (FIG. 7). Here, although a 4% triethanolamine aqueous solution is used as the developer, the developer is not limited to this.

In the wiring pattern forming method of this embodiment, as described above, the thickness tp of the photosensitive wiring paste layer is expressed by the following formula (1):
6 μm + V / S <tp <20 μm + (V / S) (1)
And satisfying the requirement of tp> 6 μm + (V / S) in the above formula (1), it is possible to suppress and prevent the occurrence of defective filling in the concave portion 5a of the imprint mold 3. In addition, when the requirement of tp <20 μm + (V / S) is satisfied, the wiring pattern collapses or peels off due to dissolution of the unexposed portion of the photosensitive wiring paste layer 2 in the development (wet etching) process. Suppressed and prevented. As a result, even when the wiring pattern is fine, it is possible to efficiently form a highly accurate and reliable wiring pattern.

  In addition, according to the wiring pattern forming method of the first embodiment, it is possible to reduce the man-hours for setting the condition when the pattern shape of the wiring pattern to be formed is changed, and to improve the productivity. Cost can be reduced.

  In this second embodiment, a case where a multilayer inductor having a coil formed by applying a wiring pattern forming method of the present invention and having a multilayer wiring pattern (coil conductor) connected between layers is manufactured. I will explain to you.

  (1) As shown in FIG. 8, a carrier film 32 is attached to the substrate 31, and a first insulating paste 33 a is applied on the carrier film 32 by printing. The insulating paste 33a is cured to form the lowermost (first) insulating layer 43a.

  As the substrate 31, a quartz substrate having a surface roughness Ra = 0.1 to 1 μm, a thickness of 3 mm, and 100 mm □ can be used.

  As the carrier film 32, a foam release sheet (manufactured by Nitto Denko: Riva Alpha) or the like can be used.

As the insulating paste 33a, for example, a photosensitive glass paste is used and cured by UV irradiation. As the exposure amount, an exposure amount at which the insulating paste is sufficiently cured is used. For example, in the case of a photosensitive glass paste using a general photosensitive acrylic resin, the received light amount is about 2000 mJ / cm ² .

(2) Further, a photosensitive wiring paste is applied on the insulating layer 43a with the following thickness to form a photosensitive wiring paste layer.
6 μm + (V / S) <tp <20 μm + (V / S)
tp: the thickness of the photosensitive wiring paste layer,
S: area of paste transfer region,
V: Volume of the concave portion in the region (pattern transfer region) of the concavo-convex pattern formed on the imprint mold in contact with the photosensitive wiring paste layer. Note that as the photosensitive wiring paste, a photosensitive conductive paste having thermoplasticity, for example, photosensitive Sex Ag paste is used.
As a coating method, for example, a method such as printing can be used.

(3) As shown in FIG. 9, the imprint mold 3 is a molded body in which the concave-convex pattern forming surface 4 on the lower surface side includes a substrate 31, a carrier film 32, an insulating layer 43 a, and a photosensitive wiring paste layer 34. 40, and is pressed (pressed) against the photosensitive wiring paste layer 34 constituting the molded body 40 under a pressure of 5 MPa while being heated to 100 ° C.
In addition, as the imprint mold 3, the thing of the same structure as what was used in Example 1 was used (refer FIG. 2).

  Here, the imprint mold 3 is pressed onto the photosensitive wiring paste layer 34 at a pressure of 5 MPa while being heated to 100 ° C., but the heating temperature at this time is included in the photosensitive wiring paste layer 34 ( The resin may have a temperature range that is equal to or higher than the glass transition temperature (Tg) of the resin and the photosensitive wiring paste layer 34 (resin contained therein) is not thermally cured. If Tg is below room temperature, you may press at room temperature.

  Moreover, the pressure at the time of a press should just be a range which can form a desired uneven | corrugated pattern in the photosensitive wiring paste layer 34 (transfer).

  At this time, as shown in FIG. 9, buffering is provided between the first stage 11 supporting the substrate 31 and the substrate 31 and between the imprint mold 3 and the second stage 21 positioned above the imprint mold 3. The imprint mold 3 may be pressed with the materials 15 and 25 installed.

(4) Then, the imprint mold 3 and the molded body 40 (the photosensitive wiring paste layer 34) are cooled, and the photosensitive wiring paste layer 34 is exposed and cured with an exposure amount of 500 mJ / cm ² (FIG. 10). ).
The exposure amount is determined by the sensitivity of the photocurable material used for the photosensitive wiring paste layer 34. It is appropriate usually ^{10mJ / cm 2 ~2000mJ / cm 2} .
In some cases, the exposure may be performed before the above cooling is completed.

  (5) The imprint mold 3 is released from the molding target 40. As a result, as shown in FIGS. 11 and 12, a region (wiring pattern) 34a formed on the substrate 31 is molded into a shape corresponding to the shape of the recess 5a (FIG. 2) of the imprint mold 3 and is photocured. The uncured region (uncured film) 34b that has been thinned by being pressed by the convex portion 5b of the imprint mold 3 remains.

  (6) Then, the uncured film (residual film) 34b is removed by wet etching (development) to obtain a first-layer wiring pattern 34a (FIG. 12). Here, for example, a 4% triethanolamine aqueous solution is used as the developer.

(7) Next, the wiring pattern 34a is subjected to a decompression process at 90 ° C. and 10 Pa for 60 minutes, and then heated to 200 ° C. with a hot plate.
The conditions for the decompression process are not limited to this. If the pressure is 100 Pa or less, the effect can be obtained in a shorter time.

(8) Then, as shown in FIG. 13, a second layer of insulating paste 33b is applied on the wiring pattern 34a by a screen printing method using a screen plate 38a and a squeegee 38b to a thickness of 10 μm.
Note that the method of applying the second-layer insulating paste 33b is not limited to the screen printing method, and other methods can be used.
Further, as the second-layer insulating paste 33b, for example, the same photosensitive glass paste as the first-layer insulating paste 33a can be used. It is also possible to use a different one from the first-layer insulating paste.

(9) Then, if necessary, a via hole through hole 36 is formed in the second insulating paste 33b as shown in FIG.
In the case of a photosensitive glass paste, a via hole pattern can be formed by photolithography. Examples of processing conditions include an exposure amount of 100 mJ / cm ² , development for 30 seconds (developer: 2% Na ₂ CO ₃ aqueous solution), and the like.
Simultaneously with the formation of the via hole through hole 36 or after the formation of the via hole through hole 36, the insulating paste 33b is cured to form the second insulating layer 43b.

  (10) Then, the steps (2) to (9) are repeated to form a predetermined number of wiring patterns 34a, and then the third (uppermost) insulating paste is formed on the uppermost wiring pattern 34a. 33c is printed and cured by UV irradiation to form the uppermost (third layer) insulating layer 43c (FIG. 15).

  In FIG. 15, for the sake of convenience, the wiring pattern has a two-layer structure and the interlayer connection is shown by the via-hole conductor 37. However, the wiring pattern can have a multilayer structure of three or more layers. In the case of the multilayer inductor as in the embodiment, it usually has a multilayer structure of three or more layers.

  Further, as the insulating paste 33c for forming the uppermost insulating layer 43c, for example, the same insulating paste (photosensitive glass paste) as the first and second insulating pastes 33a and 33b is used. However, it is possible to use a different one from the first and second insulating pastes.

  (11) Then, the wafer is diced and divided into individual chips, the carrier film is peeled off, and the substrate is removed.

  (12) A chip element is obtained by firing individual chips 39 (FIG. 16). Then, after the chip element is barrel-polished as necessary, external electrodes are formed.

  Thereby, as schematically shown in FIG. 17, a wiring (coil conductor) 134 obtained by firing the wiring pattern (34 a (FIG. 15)) is a via-hole conductor (not shown) disposed in the insulating layer 143. Thus, the laminated coil component 100 including a pair of external electrodes 140a and 140b arranged to be electrically connected to both ends of the coil 120 is obtained. As the external electrode, for example, an external electrode having a structure in which a Ni layer is used as a lower layer and Cu plating, Sn plating, or the like is applied thereon is formed.

  In the second embodiment, the wiring pattern and the insulating layer are alternately formed to obtain a wiring pattern having a multilayer structure in which a plurality of wiring patterns are stacked via the insulating layer. Can be manufactured well.

In Example 2, as in the case of Example 1, the thickness tp of the photosensitive wiring paste layer satisfies the requirement of 6 μm + (V / S) <tp <20 μm + (V / S). As a result, the photosensitive wiring paste can be reliably filled into the recesses of the imprint mold, and the unexposed area below the wiring pattern is excessively dissolved during development (wet etching). Therefore, it is possible to suppress or prevent the occurrence of the collapse or peeling of the wiring pattern due to the above, and it is possible to form a highly accurate and reliable wiring pattern even when a fine wiring pattern is formed.
Further, according to the method of forming the wiring pattern of the second embodiment, it is possible to reduce the man-hours for setting the condition when the pattern shape of the wiring pattern to be formed is changed, and to improve the productivity. Cost can be reduced.

  In the second embodiment, the case where the multilayer inductor is manufactured has been described as an example. However, the present invention can also be applied to the case where other multilayer electronic components such as an LC filter are manufactured.

  In the second embodiment, photolithography is used to form the via hole through hole in the insulating layer. However, it is also possible to form the via hole through hole by using a mold processed into the shape of the via hole through hole. is there.

  The present invention is not limited to the above embodiments in other points, and various applications and modifications can be made within the scope of the invention.

DESCRIPTION OF SYMBOLS 1 Substrate 2 Photosensitive wiring paste layer 2a Photocured region (wiring pattern) of photosensitive wiring paste layer
2b Uncured region of photosensitive wiring paste layer 3 Imprint mold 4 Concave and convex pattern forming surface 10 Molded object 5a Concave portion of imprint mold 5b Convex portion of imprint mold 11 First stage 15 Buffer layer 16 Film (light shielding film)
17 Concavity and convexity pattern 21 Second stage 25 Buffer layer 31 Substrate 32 Carrier film 33a First insulating paste 33b Second insulating paste 33c Third insulating paste 34 Photosensitive wiring paste layer 34a Light of photosensitive wiring paste layer Hardened area (wiring pattern)
34b Uncured region of photosensitive wiring paste 36 Via hole for via hole 37 Via hole conductor 38a Screen plate 38b Squeegee 39 Chip 40 Molded body 43a Lowermost insulating layer cured insulating paste 43b Second insulating layer 43c Uppermost layer (Third layer) insulating layer 100 laminated coil component 120 coil 134 coil conductor 143 insulating layer 140a, 140b external electrode

Claims (3)

Applying a photosensitive wiring paste to form a photosensitive wiring paste layer; and
A step of pressing an imprint mold having a predetermined concavo-convex pattern and having a light-shielding film formed on the surface of the convex portion against the photosensitive wiring paste layer, and irradiating the photosensitive wiring paste layer with light through the imprint mold;
Forming a predetermined wiring pattern by removing a non-light-cured unexposed portion of the photosensitive wiring paste layer by wet etching, and a wiring pattern forming method comprising:
A method of forming a wiring pattern, characterized in that a thickness tp of the photosensitive wiring paste layer is defined within a range of the following formula (1).
6 μm + (V / S) <tp <20 μm + (V / S) (1)
However,
tp: the thickness of the photosensitive wiring paste layer,
S: area of paste transfer region,
V: Volume of the concave portion in the region of the concave / convex pattern in contact with the photosensitive wiring paste layer A method of forming a wiring pattern having a multilayer structure in which a plurality of wiring patterns are laminated via an insulating layer,
(a) forming a wiring pattern by the method according to claim 1;
(b) forming an insulating layer so as to cover the wiring pattern;
and (c) forming a wiring pattern on the insulating layer by the method according to claim 1.   3. The method of forming a wiring pattern according to claim 1, wherein the photosensitive wiring paste is mainly composed of Ag.

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