CN103236415A - Thin film hybrid integrated circuit electroplating method - Google Patents
Thin film hybrid integrated circuit electroplating method Download PDFInfo
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- CN103236415A CN103236415A CN2012105941093A CN201210594109A CN103236415A CN 103236415 A CN103236415 A CN 103236415A CN 2012105941093 A CN2012105941093 A CN 2012105941093A CN 201210594109 A CN201210594109 A CN 201210594109A CN 103236415 A CN103236415 A CN 103236415A
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Abstract
The invention provides a thin film hybrid integrated circuit electroplating method. The method includes: sequentially depositing a TaN-TiWu-Au composite thin film on a microstrip substrate by utilizing a magnetic-control vacuum sputtering machine, using photoresist as a mask, etching away a gold layer and a TiWu layer through the wet etching process and completely retaining a TaN layer for realizing interconnection when locally electroplating an island circuit; and performing thermal oxidation processing in a drying box at the temperature of 200-280 DEG C for 180-360min to generate a tantalum oxide layer on the surface of the TaN layer, by the above processing, local circuit connection and relative insulation on a non-electroplated surface under the electroplating state can be realized so as to realize selectively local electroplating. By the thin film hybrid integrated circuit electroplating method, photoresist consumption is small, production cost is low, and environment-friendly production development trend is met.
Description
Technical field
The present invention relates to a kind of electroplating technology, particularly a kind of thin-film hybrid integrated circuit electro-plating method.
Background technology
Along with the microwave and millimeter wave continuous advancement in technology, thin-film hybrid integrated circuit manufacturing process technical merit also significantly improves, owing to pass through the film thickness of vacuum sputtering or evaporation only less than 1 micron, as much as possible little in order to guarantee circuit loss, thickness need be increased to 5 times of 3 ∽ of skin depth, need to thicken with electric plating method for this reason, and the material of current thin film circuit is in the majority with gold, because its stable performance, be difficult for oxidation, be not subject to acid and alkali corrosion, and electric conductivity is good, circuit loss is low, but the local circuit that always has the isolated island form in the circuit, the electroplating technology that solves this class local circuit at present mainly contains three kinds: first kind is electric plating of whole board, namely carries out full wafer earlier and electroplates thickening, and photoetching corrosion goes out circuitous pattern then; Second kind is that first photoetching corrosion goes out figure, realizes the interconnected of circuit by gold wire bonding then, electroplates thickening at last; The third is graphic plating, and namely protection is with photoresist electroplated earlier, and then goes out circuitous pattern by photoetching corrosion.
Present these three kinds of technology coming with some shortcomings in various degree all in application process, such as first kind of electric plating of whole board, because it is thicker to electroplate rete, adopt wet etching to have bigger corrosion factor, make the band linear dimension diminish, deterioration in accuracy, and this technology noble metal waste is serious, the production cost height; Then be to need gold wire bonding and go the spun gold operation as second kind, inevitably produce a large amount of coin markings and burr for this reason, increased circuit loss and standing-wave ratio, and gold wire bonding and go the labor intensity of spun gold big, efficient is low; The third graphic plating technology then is to carry out under the situation of band glue, and photoresist can incorporate in the plating bath gradually in electroplating process, and the electroplating current density that can bear after electroplate liquid the is contaminated production efficiency that diminishes reduces, and causes electroplate liquid to scrap when serious.
Therefore, there is defective in prior art, needs to improve.
Summary of the invention
Technical problem to be solved by this invention is at the deficiencies in the prior art, and a kind of thin-film hybrid integrated circuit electro-plating method is provided.
Technical scheme of the present invention is as follows:
A kind of thin-film hybrid integrated circuit electro-plating method wherein, may further comprise the steps:
A: magnetron sputtering deposition tantalum nitride membrane resistance on substrate, adopt high-purity tantalum target, the sputter reacting gas is nitrogen and argon gas;
B: sputtered titanium W film and gold thin film successively on tantalum nitride membrane, use titanium tungsten target and high-purity gold target, the sputter reacting gas is argon gas;
C: do mask with photoresist, the golden corrosive liquid that disposes with iodine and KI mixed aqueous solution etches away unwanted gold outside the design configuration, falls unwanted titanium tungsten film outside the design configuration with titanium tungsten corrosive liquid wet etching;
D: behind potassium hydroxide solution removal photoresist, after the high purity water flushing, again with analyzing the wiping of pure grade acetone solution;
E: adopt the method for thermal oxidation after the exposed surface of tantalum nitride membrane generates oxide film, electroplate and finally etch circuitous pattern;
F: with the substrate thermal oxidation under the vacuum drying chamber predetermined temperature that cleans up, make the tantalum nitride surface generate one deck tantalum oxide film;
G: at room temperature clean through degreaser oil removal treatment and high purity water respectively, and then clean through 10% the activation of salt picking acid and high purity water;
H: the electric current of getting scheduled current density is electroplated, and at circuit deposition one deck gold, electroplates the end back and cleans 60s with high purity water, then poach in the boiling water;
I: the corrosive liquid that mixes with ammonium fluoride and nitric acid erodes tantalum oxide and tantalum nitride obtains designing circuit pattern.
Described method, wherein, in the described steps A, described nitrogen and partial pressure of ar gas are than being N2:Ar=1:35; The square resistance of described sputter tantalum nitride membrane is 5 ∽, the 15 Ω/ that is lower than design load.
Described method, wherein, among the described step B, described titanium tungsten film is 0.05 micron; Described gold thin film is 0.2 micron; The flow of the gas of described argon gas is 70sccm.
Described method, wherein, among the described step C, content of iodine is that 60g/L and KI content are 200g/L in the described golden corrosive liquid.
Described method, wherein, among the described step C, described titanium tungsten corrosive liquid is 30% hydrogen peroxide solution, etching time is 10 ∽ 12min.
Described method, wherein, among the described step D, described potassium hydroxide solution is 10%; Described high purity water washing time is 60s.
Described method, wherein, in the described step F, described vacuum drying chamber predetermined temperature is arranged between 280 ℃ of 200 ℃ of ∽; Described oxidization time is 180min ∽ 360min.
Described method, wherein, among the described step G, the described degreaser oil removal treatment time is 30s ∽ 60s; Described high purity water scavenging period is 60s; Described salt picking acid soak time is 30s ∽ 60s.
Described method, wherein, among the described step H, described scheduled current density is 0.1 ∽ 0.3A/dm2; The described poach time is 10min.
Described method, wherein, among the described step I, described ammonium fluoride and described nitric acid weight ratio are 1:5.
Adopt such scheme, the present invention has not only solved the problem that prior art exists, and obviously has following advantage:
1, can no gold wire bonding connect and the state of glue localised protection under realize thin-film hybrid integrated circuit in the plating of isolated island formula local circuit, not only simple to operate, and do not have coin marking and also can not exert an influence to electroplate liquid quality and useful life.
2, need not to carry out electric plating of whole board, gold wire bonding and band glue and electroplate and just can realize the plating of integrated circuit, and have circuit precision height, side and corrode little, surperficial no marking, simple to operate, advantage such as production efficiency is high, production cost is low.
3, the present invention low, the production development trend that meets environmental protection of the few production cost of amount with photoresist.
Description of drawings
Fig. 1 a-c utilizes magnetron sputtering technique sputter one laminated film and photoetching on substrate to show the circuitous pattern structure flow chart;
Fig. 1 a is compound TaN-TiWu-Au thin film deposition schematic diagram;
Fig. 1 b is photoresist mask wet etching circuit diagram;
Fig. 1 c is schematic diagram behind the removal photoresist mask;
Fig. 2 a-c is the structure flow chart that tantalum nitride is carried out the laggard electroplating of thermal oxidation;
Fig. 2 a thermal oxidation tantalum nitride membrane is produced the tantalum oxide schematic diagram;
Fig. 2 b electroplates the back schematic diagram;
Fig. 2 c etching oxidation tantalum and tantalum nitride schematic diagram;
Fig. 3 finally forms the product stereogram for the application.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.
Embodiment one
Extremely shown in Figure 3 as Fig. 1 a, the application provides a technical scheme, overall technological scheme of the present invention at first is to utilize magnetic control vacuum sputtering machine to be deposited on the TaN-TiWu-Au laminated film on the microstrip substrate successively, by regulating and controlling reaction gas flow ratio and time, the square resistance of control sputter rear film is lower than design load 5 Ω ∽ 15 Ω, and the sputter thickness of TiWu layer and Au layer then carries out sputter according to designing requirement; Do mask then with photoresist, etch away wherein gold layer and titanium tungsten layer and the complete tantalum nitride layer that retains by wet-etching technology, interconnected when realizing local isolated island circuit plating; Next at 200 ℃--carry out thermal oxidation 180min ∽ 360min in 280 ℃ the drying box, make surface production one deck tantalum oxide of tantalum nitride layer, just can realize local circuit conducting under the plating state and the relative insulation on electroless coating surface through above processing, thereby realize the selective local plating; Etch away the circuit that tantalum nitride and tantalum oxide layers can obtain designing through electroplating substrate thicken method direct or employing photoresist localised protection resistance.
Embodiment two
On the basis of above-described embodiment, be that example is carried out the parcel plating gold with the production of the thin-film hybrid integrated circuit of 50 Ω/.
As shown in Figure 1, be to etch the complete circuitous pattern that keeps tantalum nitride layer at the magnetron sputtering film.
As shown in Figure 1a, magnetron sputtering deposition tantalum nitride membrane resistance 102 on substrate 101, adopt high-purity tantalum target, the sputter reacting gas is nitrogen and argon gas, the flow voltage ratio of gas is N2:Ar=1:35, the thickness of tantalum nitride membrane is at 0.06 micron, film side's resistance that sputter obtains is 36 ∽, 45 Ω/, use titanium tungsten target and high-purity gold target then, the sputter reacting gas is argon gas, the flow of gas is 70sccm, and sputter thickness is 0.05 micron titanium tungsten film 103 and 0.2 micron gold thin film 104 successively on tantalum nitride membrane.
Shown in Fig. 1 b, 107 do mask and fall unwanted gold and titanium tungsten film outside the design configuration with wet etching with photoresist, wherein golden corrosive liquid is iodine and KI mixed aqueous solution, and wherein its content of iodine is 60g/L, KI content is 200g/L, and titanium tungsten corrosive liquid is 30% hydrogen peroxide solution.
Shown in Fig. 1 c, remove photoresist 107 with 10% potassium hydroxide solution, wash 60s with high purity water then, at last again with analyzing pure grade acetone solution wiped clean.
Shown in Fig. 2 a, be to adopt the method for thermal oxidation to generate oxide film on tantalum nitride membrane 102 exposed surfaces, electroplate and finally etch circuitous pattern then.
Shown in Fig. 2 a, with the substrate vacuum drying chamber oxidation 180min ∽ 360min under the state of 280 ℃ of 200 ℃ of ∽ that cleans up, make the tantalum nitride surface generate one deck tantalum oxide 105 films.
Shown in Fig. 2 a, at room temperature clean through the degreaser oil removal treatment of 30s ∽ 60s and the high purity water of 60s respectively, and then clean through the 10% salt picking acid activation of 30s ∽ 60s and the high purity water of 60s.
Shown in Fig. 2 b, be that the electric current of 0.1 ∽ 0.3A/dm2 is electroplated with current density, at circuit deposition one deck gold 106, electroplate and finish to clean 60s with high purity water at last, then poach 10min in the boiling water.
Shown in Fig. 2 c, be that the corrosive liquid of 1:5 erodes tantalum oxide and tantalum nitride obtains designing circuit pattern with ammonium fluoride and nitric acid weight ratio.
As shown in Figure 3, adopting said method to generate is final production product three-dimensional effect diagram of the present invention.
Embodiment three
On the basis of above-described embodiment, to shown in Figure 3, a kind of thin-film hybrid integrated circuit electro-plating method wherein, may further comprise the steps as Fig. 1 a:
A: magnetron sputtering deposition tantalum nitride membrane resistance on substrate, adopt high-purity tantalum target, the sputter reacting gas is nitrogen and argon gas;
B: sputtered titanium W film and gold thin film successively on tantalum nitride membrane, use titanium tungsten target and high-purity gold target, the sputter reacting gas is argon gas;
C: do mask with photoresist, the golden corrosive liquid that disposes with iodine and KI mixed aqueous solution etches away unwanted gold outside the design configuration, falls unwanted titanium tungsten film outside the design configuration with titanium tungsten corrosive liquid wet etching;
D: behind potassium hydroxide solution removal photoresist, after the high purity water flushing, again with analyzing the wiping of pure grade acetone solution;
E: adopt the method for thermal oxidation after the exposed surface of tantalum nitride membrane generates oxide film, electroplate and finally etch circuitous pattern;
F: with the substrate thermal oxidation under the vacuum drying chamber predetermined temperature that cleans up, make the tantalum nitride surface generate one deck tantalum oxide film;
G: at room temperature clean through degreaser oil removal treatment and high purity water respectively, and then clean through 10% the activation of salt picking acid and high purity water;
H: the electric current of getting scheduled current density is electroplated, and at circuit deposition one deck gold, electroplates the end back and cleans 60s with high purity water, then poach in the boiling water;
I: the corrosive liquid that mixes with ammonium fluoride and nitric acid erodes tantalum oxide and tantalum nitride obtains designing circuit pattern.
Described method, wherein, in the described steps A, described nitrogen and partial pressure of ar gas are than being N2:Ar=1:35; The square resistance of described sputter tantalum nitride membrane is 5 ∽, the 15 Ω/ that is lower than design load.
Described method, wherein, among the described step B, described titanium tungsten film is 0.05 micron; Described gold thin film is 0.2 micron; The flow of the gas of described argon gas is 70sccm.
Described method, wherein, among the described step C, content of iodine is that 60g/L and KI content are 200g/L in the described golden corrosive liquid.
Described method, wherein, among the described step C, described titanium tungsten corrosive liquid is 30% hydrogen peroxide solution, etching time is 10 ∽ 12min.
Described method, wherein, among the described step D, described potassium hydroxide solution is 10%; Described high purity water washing time is 60s.
Described method, wherein, in the described step F, described vacuum drying chamber predetermined temperature is arranged between 280 ℃ of 200 ℃ of ∽; Described oxidization time is 180min ∽ 360min.
Described method, wherein, among the described step G, the described degreaser oil removal treatment time is 30s ∽ 60s; Described high purity water scavenging period is 60s; Described salt picking acid soak time is 30s ∽ 60s.
Described method, wherein, among the described step H, described scheduled current density is 0.1 ∽ 0.3A/dm2; The described poach time is 10min.
Described method, wherein, among the described step I, described ammonium fluoride and described nitric acid weight ratio are 1:5.
Should be understood that, for those of ordinary skills, can be improved according to the above description or conversion, and all these improvement and conversion all should belong to the protection range of claims of the present invention.
Claims (10)
1. a thin-film hybrid integrated circuit electro-plating method is characterized in that, may further comprise the steps:
A: magnetron sputtering deposition tantalum nitride membrane resistance on substrate, adopt high-purity tantalum target, the sputter reacting gas is nitrogen and argon gas;
B: sputtered titanium W film and gold thin film successively on tantalum nitride membrane, use titanium tungsten target and high-purity gold target, the sputter reacting gas is argon gas;
C: do mask with photoresist, the golden corrosive liquid that disposes with iodine and KI mixed aqueous solution etches away unwanted gold outside the design configuration, falls unwanted titanium tungsten film outside the design configuration with titanium tungsten corrosive liquid wet etching;
D: behind potassium hydroxide solution removal photoresist, after the high purity water flushing, again with analyzing the wiping of pure grade acetone solution;
E: adopt the method for thermal oxidation after the exposed surface of tantalum nitride membrane generates oxide film, electroplate and finally etch circuitous pattern;
F: with the substrate thermal oxidation under the vacuum drying chamber predetermined temperature that cleans up, make the tantalum nitride surface generate one deck tantalum oxide film;
G: at room temperature clean through degreaser oil removal treatment and high purity water respectively, and then clean through 10% the activation of salt picking acid and high purity water;
H: the electric current of getting scheduled current density is electroplated, and at circuit deposition one deck gold, electroplates the end back and cleans 60s with high purity water, then poach in the boiling water;
I: the corrosive liquid that mixes with ammonium fluoride and nitric acid erodes tantalum oxide and tantalum nitride obtains designing circuit pattern.
2. the method for claim 1 is characterized in that, in the described steps A, described nitrogen and partial pressure of ar gas are than being N2:Ar=1:35; The square resistance of described sputter tantalum nitride membrane is 5 ∽, the 15 Ω/ that is lower than design load.
3. method as claimed in claim 2 is characterized in that, among the described step B, described titanium tungsten film is 0.05 micron; Described gold thin film is 0.2 micron; The flow of the gas of described argon gas is 70sccm.
4. method as claimed in claim 3 is characterized in that, among the described step C, content of iodine is that 60g/L and KI content are 200g/L in the described golden corrosive liquid.
5. method as claimed in claim 4 is characterized in that, among the described step C, described titanium tungsten corrosive liquid is 30% hydrogen peroxide solution, and etching time is 10 ∽ 12min.
6. method as claimed in claim 5 is characterized in that, among the described step D, described potassium hydroxide solution is 10%; Described high purity water washing time is 60s.
7. method as claimed in claim 6 is characterized in that, in the described step F, described vacuum drying chamber predetermined temperature is arranged between 280 ℃ of 200 ℃ of ∽; Described oxidization time is 180min ∽ 360min.
8. method as claimed in claim 7 is characterized in that, among the described step G, the described degreaser oil removal treatment time is 30s ∽ 60s; Described high purity water scavenging period is 60s; Described salt picking acid soak time is 30s ∽ 60s.
9. method as claimed in claim 8 is characterized in that, among the described step H, described scheduled current density is 0.1 ∽ 0.3A/dm2; The described poach time is 10min.
10. method as claimed in claim 9 is characterized in that, among the described step I, described ammonium fluoride and described nitric acid weight ratio are 1:5.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103579107A (en) * | 2013-11-21 | 2014-02-12 | 中国电子科技集团公司第四十一研究所 | Membrane circuit dicing method based on mask electroplating |
| CN106057785A (en) * | 2016-05-18 | 2016-10-26 | 中国电子科技集团公司第四十研究所 | Method of integrating two TaN interconnect film resistors of different sheet resistances on same plane of dielectric substrate |
| CN106206402A (en) * | 2016-08-16 | 2016-12-07 | 苏州华博电子科技有限公司 | Accurate thin film circuit fabrication method on a kind of curved surface |
| CN109536889A (en) * | 2018-12-29 | 2019-03-29 | 广州创天电子科技有限公司 | A kind of forming method of ceramic membrane circuit and its splash-proofing sputtering metal coating |
| CN110715681A (en) * | 2018-07-12 | 2020-01-21 | 山东大学 | Method for preparing high-reflection film optical cavity by gold hot-pressing bonding |
| CN110983276A (en) * | 2019-12-27 | 2020-04-10 | 无锡奥夫特光学技术有限公司 | Preparation method and preparation equipment of tantalum nitride film resistor |
| CN111063619A (en) * | 2019-12-31 | 2020-04-24 | 中国电子科技集团公司第十三研究所 | Electroplating method |
| CN113948388A (en) * | 2021-08-31 | 2022-01-18 | 福建毫米电子有限公司 | Wet etching method and distributed parameter circuit layout |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103579107A (en) * | 2013-11-21 | 2014-02-12 | 中国电子科技集团公司第四十一研究所 | Membrane circuit dicing method based on mask electroplating |
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| CN106206402A (en) * | 2016-08-16 | 2016-12-07 | 苏州华博电子科技有限公司 | Accurate thin film circuit fabrication method on a kind of curved surface |
| CN110715681A (en) * | 2018-07-12 | 2020-01-21 | 山东大学 | Method for preparing high-reflection film optical cavity by gold hot-pressing bonding |
| CN110715681B (en) * | 2018-07-12 | 2021-02-19 | 山东大学 | Method for preparing high-reflection film optical cavity by gold hot-pressing bonding |
| CN109536889A (en) * | 2018-12-29 | 2019-03-29 | 广州创天电子科技有限公司 | A kind of forming method of ceramic membrane circuit and its splash-proofing sputtering metal coating |
| CN110983276A (en) * | 2019-12-27 | 2020-04-10 | 无锡奥夫特光学技术有限公司 | Preparation method and preparation equipment of tantalum nitride film resistor |
| CN111063619A (en) * | 2019-12-31 | 2020-04-24 | 中国电子科技集团公司第十三研究所 | Electroplating method |
| CN111063619B (en) * | 2019-12-31 | 2021-12-24 | 中国电子科技集团公司第十三研究所 | Electroplating method |
| CN113948388A (en) * | 2021-08-31 | 2022-01-18 | 福建毫米电子有限公司 | Wet etching method and distributed parameter circuit layout |
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