CN109536889A - A kind of forming method of ceramic membrane circuit and its splash-proofing sputtering metal coating - Google Patents
A kind of forming method of ceramic membrane circuit and its splash-proofing sputtering metal coating Download PDFInfo
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- CN109536889A CN109536889A CN201811639977.2A CN201811639977A CN109536889A CN 109536889 A CN109536889 A CN 109536889A CN 201811639977 A CN201811639977 A CN 201811639977A CN 109536889 A CN109536889 A CN 109536889A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
A kind of ceramic membrane circuit provided by the invention, it includes a substrate and a splash-proofing sputtering metal coating, the substrate is the ceramic substrate of 99.6% aluminium oxide of purity, the splash-proofing sputtering metal coating successively includes a resistive layer, an adhesion layer and a conductor layer from the inside to the outside, the resistive layer is the tantalum nitride layer of purity 99.9%, the adhesion layer is the titanium tungsten layer of purity 99.9%, and the conductor layer is the layer gold of purity 99.99%.
Description
Technical field
The present invention relates to a kind of ceramic membrane circuit more particularly to a kind of ceramic membrane circuits and its splash-proofing sputtering metal coating
Forming method.
Background technique
Ceramic membrane circuit is a kind of resistance, capacitance values precise control, the thin-film electro that numberical range is wide, integrated level is not high
Road carries out assembling just formation since thin film circuit needs to carry out in the fabrication process the welding manners such as thermal compression welding, ultrasonic welding
Complete integrated circuit, the functionality and adhesiveness that splash-proofing sputtering metal coating has higher requirements, here, needing to propose a kind of pottery
The forming method of porcelain thin film circuit and its splash-proofing sputtering metal coating.
Summary of the invention
The object of the present invention is to provide the forming method of a kind of ceramic membrane circuit and its splash-proofing sputtering metal coating, resistance controls
Precisely, the resistive layer and ceramic substrate of splash-proofing sputtering metal coating have stronger adhesion strength, the shape by the sputtering of predetermined condition to system
The sputtering on ceramic substrate, which is realized, at method forms splash-proofing sputtering metal coating.
A kind of ceramic membrane circuit provided by the invention a comprising substrate and a splash-proofing sputtering metal coating, the substrate are
The ceramic substrate of 99.6% aluminium oxide of purity, the splash-proofing sputtering metal coating successively include a resistive layer, an adhesion layer from the inside to the outside
And a conductor layer, the resistive layer are the tantalum nitride layer of purity 99.9%, the adhesion layer is the titanium tungsten layer of purity 99.9%, institute
State the layer gold that conductor layer is purity 99.99%.
Preferably, the tantalum nitride layer with a thickness of
Preferably, the titanium tungsten layer with a thickness of
Preferably, the layer gold with a thickness of 2.0 ± 0.5 (μm).
Preferably, a barrier layer is additionally provided between the adhesion layer and conductor layer, which is the nickel of purity 99.9%
Layer.
Preferably, the nickel layer with a thickness of 1.0 ± 0.3 (μm).
The present invention also provides a kind of forming methods of the splash-proofing sputtering metal coating of ceramic membrane circuit comprising following steps:
A: feeding cleaning, the ceramic substrate for providing a kind of 99.6% aluminium oxide of purity of required specie size are placed in the sample presentation room of sputter
In, the titanium tungsten target that tantalum target, purity that purity is 99.9% are 99.9% is provided and the gold target material that purity is 99.99% is placed in
In the reaction chamber of sputter, use plasma etching cleaning to remove the dirt on the ceramic substrate, scavenging period 60s,
Ceramic substrate is sent to the reaction chamber of the sputter after cleaning；B: vacuumizing preheating, and adjusting makes true in the reaction chamber
Reciprocal of duty cycle is less than 6.0*10^-4Pa, and reaction indoor environment temperature is heated to 250 DEG C；C1: sputter is arranged in resistive layer pre-sputtering
Power is 200W, is passed through the nitrogen and argon gas that flow proportional is 2:100 to reaction chamber, opens shielding power supply and carry out pre-sputtering, with
The oxide layer on the tantalum target surface or other impurities ingredient are eliminated；C2: resistive layer sputtering starts on the ceramic substrate
Sputtering forms tantalum nitride layer, and the sputtering duration is 240 seconds；C3: pressure regulation will be in the reaction chamber after resistive layer sputters
Nitrogen and argon gas extraction, until vacuum degree reaches the vacuum degree of step B in reaction chamber；D1: adhesion layer pre-sputtering, setting are splashed
Penetrating machine power is 200W, is passed through the argon gas that flow is 100sccm to reaction chamber, opens shielding power supply and carry out pre-sputtering, by institute
The oxide layer or other impurities ingredient for stating titanium tungsten target material surface are eliminated；D2: adhesion layer sputtering starts to sputter shape on ceramic substrate
At titanium tungsten layer, sputtering the duration is 240 seconds；D3: after adhesion layer sputters, the indoor argon gas of reaction is taken out for pressure regulation
Out, until vacuum degree reaches the vacuum degree of step B in reaction chamber；E1: conductor layer pre-sputtering, setting sputter power are
200W is passed through the argon gas that flow is 100sccm to reaction chamber, opens shielding power supply and carry out pre-sputtering, by the gold target material table
The oxide layer or other impurities ingredient in face are eliminated；E2: conductor layer sputtering starts the sputtering on ceramic substrate and forms layer gold, sputters
Duration is 240 seconds；F, cooling, the indoor gas of extraction simultaneously naturally cool to the ceramic substrate sputtered
150℃；
G, plate is taken, ceramic substrate is transferred in sample presentation room by the manipulator of the sputter, the indoor gas of extraction,
Take out the ceramic substrate.
Ceramic membrane circuit provided by the invention makes resistive layer and 99.6% oxygen by tantalum nitride layer as resistive layer
The degree of adhesion for changing aluminium ceramic substrate is optimal, and the ceramic membrane circuit is made to avoid falling off for splash-proofing sputtering metal coating in assembling,
Improve the practicability and stability of the ceramic membrane circuit, the shape of the splash-proofing sputtering metal coating of ceramic membrane circuit provided by the invention
At method, the metal targets that optimal sputtering parameter cooperates predetermined purity are set by sputter, realizes and makes pottery in the aluminium oxide
The splash-proofing sputtering metal coating is sputtered on porcelain substrate, which improves the effective output rate and use of ceramic membrane circuit
Stability.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of ceramic membrane circuit provided in an embodiment of the present invention；
Fig. 2 is a kind of forming method step of the splash-proofing sputtering metal coating of ceramic membrane circuit provided in an embodiment of the present invention
Figure.
Specific embodiment
Technical scheme is described further with reference to the accompanying drawings and embodiments.
Embodiment 1
Refering to fig. 1, a kind of ceramic membrane circuit provided by the invention a comprising purity is the ceramics of 99.6% aluminium oxide
Substrate 0 and one be covered on the substrate surface splash-proofing sputtering metal coating, the sputtering once include from the inside to the outside a resistive layer 10,
One adhesion layer 20 and a conductor layer 30, wherein 10 thickness of the resistive layerThe tantalum nitride layer that purity is 99.9%,
The adhesion layer 20 is thicknessThe titanium tungsten layer that purity is 99.9%, the conductor layer is 1 μm of thickness, purity is
99.99% layer gold.
In addition, can be splashed between the adhesion layer 20 and conductor layer 30 to enhance the solderability of the ceramic membrane circuit
Penetrate one layer of barrier layer, the nickel layer which is 1.0 μm of thickness, purity is 99.9%.
Referring to Fig.2, the forming method of the splash-proofing sputtering metal coating of the ceramic membrane circuit provided by the invention comprising with
Lower step:
A: feeding cleaning, the ceramic substrate 0 for providing 99.6% aluminium oxide of a purity are placed in the sample presentation room of sputter, provide
The gold target material that the titanium tungsten target and purity that tantalum target that purity is 99.9%, purity are 99.9% are 99.99% is placed in sputter
Reaction chamber in, use plasma etching cleaning to remove the dirt on the ceramic substrate 0, scavenging period 60s, cleaning knot
A manipulator of the sputter send ceramic substrate 0 to the reaction chamber of the sputter after beam.；
B: vacuumizing, preheat, and adjusting makes vacuum degree in the reaction chamber be less than 6.0*10^-4Pa, will react indoor environment
Temperature is heated to 250 DEG C；
C1: 10 pre-sputtering of resistive layer, setting sputter power are 200W, and being passed through flow proportional to reaction chamber is 2:100's
Nitrogen and argon gas open shielding power supply and carry out pre-sputtering, the oxide layer on the tantalum target surface or other impurities ingredient are disappeared
It removes；
C2: resistive layer 10 sputters, and starts the sputtering on the ceramic substrate and forms tantalum nitride layer, and the sputtering duration is
240 seconds；
C3: pressure regulation after resistive layer sputters, the indoor nitrogen of the reaction and argon gas is extracted out, until in reaction chamber
Vacuum degree reaches the vacuum degree of step B；
D1: 20 pre-sputtering of adhesion layer, setting sputter power are 200W, are passed through the argon that flow is 100sccm to reaction chamber
Gas opens shielding power supply and carries out pre-sputtering, the oxide layer of the titanium tungsten target material surface or other impurities ingredient are eliminated；
D2: adhesion layer 20 sputters, and starts the sputtering on ceramic substrate and forms titanium tungsten layer, the sputtering duration is 240 seconds；
D3: pressure regulation after adhesion layer sputters, the indoor argon gas gaseous mixture of reaction is extracted out, until in reaction chamber
Vacuum degree reaches the vacuum degree of step B；
E1: 30 pre-sputtering of conductor layer, setting sputter power are 200W, are passed through the argon that flow is 100sccm to reaction chamber
Gas opens shielding power supply and carries out pre-sputtering, and the oxide layer of the golden target material surface or other impurities ingredient are eliminated；
E2: conductor layer 30 sputters, and starts the sputtering on ceramic substrate and forms layer gold, the sputtering duration is 240 seconds；
F, the ceramic substrate 0 sputtered is simultaneously naturally cooled to 150 DEG C by cooling, the indoor gas of extraction；
G, plate is taken, the indoor gas of extraction takes out the ceramic substrate.
Ceramic membrane circuitous resistance provided by the invention, capacitance values precise control, numberical range is wide, integrated level is not high,
It is widely used.
Above description is only specific embodiment of the present invention, it will be appreciated by those of skill in the art that here only
It is for example, protection scope of the present invention is as defined in appended claims.Therefore with regard to the present patent application patent model
Same variation made by enclosing, still falls within the range that the present invention is covered.
Claims (7)
1. a kind of ceramic membrane circuit comprising a substrate and a splash-proofing sputtering metal coating, which is characterized in that the substrate is purity
The ceramic substrate of 99.6% aluminium oxide, the splash-proofing sputtering metal coating successively include a resistive layer, an adhesion layer and one from the inside to the outside
Conductor layer, the resistive layer are the tantalum nitride layer of purity 99.9%, and the adhesion layer is the titanium tungsten layer of purity 99.9%, described to lead
Line layer is the layer gold of purity 99.99%.
2. a kind of ceramic membrane circuit as described in claim 1, which is characterized in that the tantalum nitride layer with a thickness of
3. a kind of ceramic membrane circuit as described in claim 1, which is characterized in that the titanium tungsten layer with a thickness of
4. a kind of ceramic membrane circuit as described in claim 1, which is characterized in that the layer gold with a thickness of 2.0 ± 0.5 (μ
m)。
5. the ceramic membrane circuit as described in Claims 1-4 any one, which is characterized in that the adhesion layer and conductor layer
Between be additionally provided with a barrier layer, the barrier layer be purity 99.9% nickel layer.
6. a kind of ceramic membrane circuit as claimed in claim 5, which is characterized in that the nickel layer with a thickness of 1.0 ± 0.3 (μ
m)。
7. a kind of forming method of the splash-proofing sputtering metal coating of ceramic membrane circuit as described in claim 1, which is characterized in that its
The following steps are included:
A: feeding cleaning, the ceramic substrate for providing a kind of 99.6% aluminium oxide of purity of required specie size are placed in sending for sputter
In specimen chamber, the titanium tungsten target that tantalum target, purity that purity is 99.9% are 99.9% and the gold target material that purity is 99.99% are provided
It is placed in the reaction chamber of sputter, uses plasma etching cleaning to remove the dirt on the ceramic substrate, scavenging period is
60s, a manipulator of the sputter send ceramic substrate to the reaction chamber of the sputter after cleaning；
B: vacuumizing preheating, and adjusting makes vacuum degree in the reaction chamber be less than 6.0*10^-4Pa, and reaction indoor environment temperature is added
Heat is to 250 DEG C；
C1: resistive layer pre-sputtering, setting sputter power be 200W, to reaction chamber be passed through flow proportional be 2:100 nitrogen and
Argon gas opens shielding power supply and carries out pre-sputtering, the oxide layer on the tantalum target surface or other impurities ingredient are eliminated；
C2: resistive layer sputtering starts the sputtering on the ceramic substrate and forms tantalum nitride layer, and the sputtering duration is 240 seconds；
C3: pressure regulation after resistive layer sputters, the indoor nitrogen of the reaction and argon gas is extracted out, until reaction house vacuum
Degree reaches the vacuum degree of step B；
D1: adhesion layer pre-sputtering, setting sputter power are 200W, are passed through the argon gas that flow is 100sccm to reaction chamber, open
Shielding power supply carries out pre-sputtering, and the oxide layer of the titanium tungsten target material surface or other impurities ingredient are eliminated；
D2: adhesion layer sputtering starts the sputtering on ceramic substrate and forms titanium tungsten layer, and the sputtering duration is 240 seconds；
D3: pressure regulation after adhesion layer sputters, the indoor argon gas of reaction is extracted out, until vacuum degree reaches in reaction chamber
The vacuum degree of step B；
E1: conductor layer pre-sputtering, setting sputter power are 200W, are passed through the argon gas that flow is 100sccm to reaction chamber, open
Shielding power supply carries out pre-sputtering, and the oxide layer of the golden target material surface or other impurities ingredient are eliminated；
E2: conductor layer sputtering starts the sputtering on ceramic substrate and forms layer gold, and the sputtering duration is 240 seconds；
F, the ceramic substrate sputtered is simultaneously naturally cooled to 150 DEG C by cooling, the indoor gas of extraction；
G, plate is taken, ceramic substrate is transferred in sample presentation room by the manipulator of the sputter, takes out the ceramic substrate.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811639977.2A CN109536889A (en) | 2018-12-29 | 2018-12-29 | A kind of forming method of ceramic membrane circuit and its splash-proofing sputtering metal coating |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811639977.2A CN109536889A (en) | 2018-12-29 | 2018-12-29 | A kind of forming method of ceramic membrane circuit and its splash-proofing sputtering metal coating |
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| Publication Number | Publication Date |
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| CN109536889A true CN109536889A (en) | 2019-03-29 |
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| CN201811639977.2A Pending CN109536889A (en) | 2018-12-29 | 2018-12-29 | A kind of forming method of ceramic membrane circuit and its splash-proofing sputtering metal coating |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110983276A (en) * | 2019-12-27 | 2020-04-10 | 无锡奥夫特光学技术有限公司 | Preparation method and preparation equipment of tantalum nitride film resistor |
| CN115216732A (en) * | 2022-07-01 | 2022-10-21 | 广东风华高新科技股份有限公司 | Tantalum-nitrogen-compound-doped film and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103236415A (en) * | 2012-12-31 | 2013-08-07 | 中国电子科技集团公司第四十一研究所 | Thin film hybrid integrated circuit electroplating method |
| CN103606520A (en) * | 2013-11-25 | 2014-02-26 | 中国电子科技集团公司第四十一研究所 | Method for manufacturing metal protective film used for film circuit test |
| CN105914180A (en) * | 2016-05-18 | 2016-08-31 | 中国电子科技集团公司第四十研究所 | Method of making reinforced metal hole |
-
2018
- 2018-12-29 CN CN201811639977.2A patent/CN109536889A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103236415A (en) * | 2012-12-31 | 2013-08-07 | 中国电子科技集团公司第四十一研究所 | Thin film hybrid integrated circuit electroplating method |
| CN103606520A (en) * | 2013-11-25 | 2014-02-26 | 中国电子科技集团公司第四十一研究所 | Method for manufacturing metal protective film used for film circuit test |
| CN105914180A (en) * | 2016-05-18 | 2016-08-31 | 中国电子科技集团公司第四十研究所 | Method of making reinforced metal hole |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110983276A (en) * | 2019-12-27 | 2020-04-10 | 无锡奥夫特光学技术有限公司 | Preparation method and preparation equipment of tantalum nitride film resistor |
| CN115216732A (en) * | 2022-07-01 | 2022-10-21 | 广东风华高新科技股份有限公司 | Tantalum-nitrogen-compound-doped film and preparation method thereof |
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