CN109487211A - A kind of forming method of thin film circuit and its splash-proofing sputtering metal coating - Google Patents
A kind of forming method of thin film circuit and its splash-proofing sputtering metal coating Download PDFInfo
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- CN109487211A CN109487211A CN201811640042.6A CN201811640042A CN109487211A CN 109487211 A CN109487211 A CN 109487211A CN 201811640042 A CN201811640042 A CN 201811640042A CN 109487211 A CN109487211 A CN 109487211A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
- C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
Abstract
A kind of thin film circuit and its splash-proofing sputtering metal coating shaping method, the splash-proofing sputtering metal coating is the/composite film of TiW/Au, TiW/Ni/Au or TaN/TiW/Ni/Au, and the splash-proofing sputtering metal coating shaping method of the thin film circuit is the following steps are included: clean, vacuumizing, pre-sputtering, pressure regulation, sputtering, circulation, pumping cool down.Technique of the splash-proofing sputtering metal coating shaping method of the thin film circuit by improving sputter coating and the parameter in technical process, the problem of very good solution influences the quality and performance of thin film circuit because of technique and the cleannes of film circuit board and target, improve splash-proofing sputtering metal coating quality, improve splash-proofing sputtering metal coat fastness, it is ensured that thin film circuit quality.
Description
Technical field
The present invention relates to thin film circuit fields, more particularly, to a kind of thin film circuit and its splash-proofing sputtering metal coating side of being formed
Method.
Background technique
Thin film circuit is will be between the elements such as the transistor of entire circuit, diode, resistance, capacitor and inductance and they
Interconnecting line, all with thickness in 1 micron of metal below, semiconductor, metal oxide, various metals mixed phase, alloy
Or dielectric film, and the integrated circuit made of the techniques such as vacuum evaporation, sputtering and plating.Passing through sputtering technology system
During making thin film circuit, guarantees the quality of thin film circuit and performance is the element and difficult point of technique, and sputtering technology process
And the cleannes of technological parameter in the process, film circuit board and target can all influence the quality and thin film circuit of thin film circuit
The performance of metal coating on substrate and the fastness of metal coating.
Summary of the invention
In view of the foregoing, the present invention provides a kind of splash-proofing sputtering metal coating shaping methods of thin film circuit, guarantee film
The fastness of the quality of circuit and the performance of the metal coating on film circuit board and metal coating.The present invention also provides one kind
Quality and thin film circuit of good performance.
For this purpose, a kind of splash-proofing sputtering metal coating shaping method of thin film circuit provided by the invention, the sputtering gold
Belong to the composite film that coating is TiW/Au, TiW/Ni/Au or TaN/TiW/Ni/Au, which is characterized in that the thin film circuit splashes
Radioglold category coating shaping method is the following steps are included: step 1, cleaning: by the film circuit board of material requested and size and
The metal targets are respectively put into the sample presentation room and a reaction chamber of a sputter, by the thin film circuit in the sample presentation room
Substrate is cleaned using plasma etching, removes the dirt on the film circuit board；Step 2 vacuumizes: after the completion of cleaning,
A manipulator in the sample presentation room send the film circuit board into the reaction chamber, is vacuumized to reaction chamber so that anti-
Answer the vacuum degree of room lower than 6.0 × 10-4Pa；Step 3, pre-sputtering: being passed through argon gas or argon gas nitrogen mixture to reaction chamber, setting
The sputtering power and sputtering time of each metal layer, heating temperature to 250 DEG C of constant, unlatching shielding power supply progress pre-sputterings, with
The oxide layer of target material surface or other impurities ingredient are eliminated；Step 4, sputtering: starting starter sputtering after pre-sputtering,
Sputtering forms one layer of splash-proofing sputtering metal film layer on film circuit board；Step 5, pressure regulation: by the argon gas or argon gas nitrogen inside reaction chamber
The gaseous mixture of gas is extracted out, begins to re-fill required working gas after the value that vacuum degree reaches former setting；Step 6, circulation:
Circulation step 3,4,5, until forming the splash-proofing sputtering metal coating of setting；Step 7, cooling: the film circuit board after the completion of sputtering
After naturally cooling to 150 DEG C, substrate is taken out；The sputtering condition of the metal targets meets respectively: TaN: sputtering power 200W, splashing
Penetrate time 240S, sputtering pressure 10Pa；Gas flow (sccm) ratio: nitrogen: argon gas=2:100；TiW: sputtering power
200W, sputtering time 240S, sputtering pressure 10Pa；Gas flow are as follows: argon gas=100sccm；Ni: it sputtering power 400W, splashes
Penetrate time 900S, sputtering pressure 10Pa；Gas flow are as follows: argon gas=100sccm；Au: sputtering power 200W, sputtering time
240S, sputtering pressure 10Pa；Gas flow are as follows: argon gas=100sccm.
It is further preferred that the splash-proofing sputtering metal coating is met using target purity: Ta:99.9%；TiW:99.9%；
Ni:99.9%；Au:99.99%.
It is further preferred that the plasma cleaning time is 60s.
It is further preferred that the thickness range of the metallic diaphragm is respectively as follows: TaN:TiW:Ni:1.0 ± 0.3 (μm), Au:2.0 ± 0.5 (μm).
It is further preferred that the pre-sputtering time is 60s.
A kind of thin film circuit, the thin film circuit include film circuit board and are formed on the film circuit board
Splash-proofing sputtering metal coating, the splash-proofing sputtering metal coating are formed using the thin film circuit splash-proofing sputtering metal coating shaping method.
Beneficial effects of the present invention: the splash-proofing sputtering metal coating shaping method of thin film circuit provided by the invention is splashed by improving
Penetrate the parameter in the technique and technical process of plated film, cleannes of the very good solution because of technique and film circuit board and target
The problem of influencing the quality and performance of thin film circuit, improves splash-proofing sputtering metal coating quality, improves splash-proofing sputtering metal coat fastness, really
Protect thin film circuit quality.
Detailed description of the invention
Fig. 1-1 is the thin film circuit splash-proofing sputtering metal coating shaping method flow chart that embodiment 1 provides；
Fig. 1-2 is the thin film circuit structure schematic diagram that embodiment 1 provides；
Fig. 2-1 is the thin film circuit splash-proofing sputtering metal coating shaping method flow chart that embodiment 2 provides；
Fig. 2-2 is the thin film circuit structure schematic diagram that embodiment 2 provides；
Fig. 3-1 is the thin film circuit splash-proofing sputtering metal coating shaping method flow chart that embodiment 3 provides；
Fig. 3-2 is the thin film circuit structure schematic diagram that embodiment 3 provides.
Specific embodiment
Technical scheme is described further with reference to the accompanying drawings and embodiments.
Above description is only specific embodiment of the present invention, it will be appreciated by those of skill in the art that here only
It is for example, protection scope of the present invention is as defined in appended claims.Therefore with regard to the present patent application patent model
Same variation made by enclosing, still falls within the range that the present invention is covered.
Embodiment 1
Thin film circuit splash-proofing sputtering metal coating shaping method provided in this embodiment comprising following steps:
Step 1, cleaning: material requested and the film circuit board of size 0 are put into a sample presentation room of a sputter, will
Required Ta, TiW, Ni and Au target is put into a sample presentation room of sputter, is carried out to the film circuit board 0 in the sample presentation room
Plasma etching cleaning, plasma cleaning time are 60s, remove the dirt on the film circuit board；
Step 2 vacuumizes: after the completion of cleaning, a manipulator in the sample presentation room by the film circuit board 0 send to
In the reaction chamber, the reaction chamber is vacuumized so that the background vacuum of sputter is lower than 6.0 × 10-4Pa；
Step 3, pre-sputtering: Xiang Suoshu reaction chamber is passed through argon gas nitrogen mixture, and opens radio-frequency power supply, adjustable plate pressure and
Adaptation, setting sputter power is 200W and the pre-sputtering time is 60s, heating temperature to 250 DEG C it is constant, gradually adjust out
The balance of gas and air inlet makes stable gas pressure in 10Pa, opens shielding power supply and carry out pre-sputtering to Ta target, by the oxygen of target material surface
Change layer or other impurities ingredient is eliminated.Adjust argon gas nitrogen mixture gas flow (sccm) ratio: nitrogen: argon gas=
2:100；
Step 4, sputtering: starting starter sputtering after pre-sputtering, power supply sputters Ta target, sputters on film circuit board
Form one layer of TaN resistive layer 1a, the Ta target sputtering condition are as follows: sputtering power 200W, sputtering time 240S；Gas flow
(sccm) ratio: nitrogen: argon gas=2:100；The TaN resistive layer 1a thickness are as follows:
Step 5, pressure regulation: the gaseous mixture of the argon gas nitrogen inside reaction chamber is extracted out, when vacuum degree reaches the value of former setting
After begin to be passed through argon gas.
Step 6, circulation sequentially form the barrier layer TiW adhesion layer 2a, Ni 3a and Au conductor layer 4a:
1) it, is passed through argon gas into reaction chamber, gradually adjusts the balance of outlet and air inlet, makes stable gas pressure required for experiment
Operating air pressure on, open shielding power supply and pre-sputtering carried out to TiW target, start starter sputtering, power supply sputtering after pre-sputtering
TiW target, the one TiW adhesion layer 2a of magnetron sputtering on TaN resistive layer 1a.The TiW sputtering condition are as follows: sputtering power 200W, splash
Penetrate time 240S；Gas flow are as follows: argon gas=100sccm.The TiW adhesion layer 2a thickness are as follows:It will
Argon gas extraction inside reaction chamber begins to inflate again after the value that vacuum degree reaches former setting.
2) it, is passed through argon gas into reaction chamber, gradually adjusts the balance of outlet and air inlet, makes stable gas pressure required for experiment
Operating air pressure on, open shielding power supply and pre-sputtering carried out to Ni target, start starter sputtering after pre-sputtering, power supply sputters Ni
Target, one barrier layer the Ni 3a of magnetron sputtering on TiW adhesion layer 2a.The Ni sputtering condition are as follows: when sputtering power 400W, sputtering
Between be 900S；Gas flow (sccm): argon gas=100；The barrier layer the Ni 3a thickness are as follows: 1.0 ± 0.3 (μm)；By reaction chamber
The argon gas of the inside is extracted out, begins to inflate again after the value that vacuum degree reaches former setting.
3) it is passed through argon gas into reaction chamber, gradually adjusts the balance of outlet and air inlet, makes stable gas pressure required for experiment
Operating air pressure on, open shielding power supply and pre-sputtering carried out to Au target, start starter sputtering after pre-sputtering, power supply sputters Au
Target, the one Au conductor layer 4a of magnetron sputtering on the barrier layer the Ni 3a.The Au sputtering condition are as follows: sputtering power 200W, sputtering
Time 240S；Gas flow (sccm): argon gas=100；The Au conductor layer 4a thickness are as follows: 2.0 ± 0.5 (μm).
Step 7, pumping cooling: extracting gas in the reaction chamber out, it is to be sputtered after the completion of film circuit board 0 it is naturally cold
But to after 150 DEG C, the manipulator send the film circuit board after the completion of sputtering to the sample presentation room, manually takes out described thin
Film circuit substrate.
The splash-proofing sputtering metal coating is met using target purity: Ta:99.9%；TiW:99.9%；Ni:99.9%；Au:
99.99%.
The present embodiment forms thin film circuit an A, the thin film circuit A and includes film circuit board 0 and be formed in described thin
Splash-proofing sputtering metal coating on film circuit substrate 0, the splash-proofing sputtering metal coating include by above-mentioned splash-proofing sputtering metal coating shape from inside to outside
TaN resistive layer 1a, TiW adhesion layer 2a, Ni barrier layer 3a and Au the conductor layer 4a formed at method.The thin film circuit A is uncomfortable
It closes high frequency to use, especially millimere-wave band.Welding characteristic supports the welding of the solder containing Sn, and high temperature limit is up to 450 DEG C.
Embodiment 2
A kind of thin film circuit splash-proofing sputtering metal coating shaping method provided in this embodiment comprising following steps:
Step 1, cleaning: material requested and the film circuit board of size 0 are put into a sample presentation room of a sputter, will
Required TiW, Ni and Au target is put into a sample presentation room of sputter, the film circuit board 0 in the sample presentation room is carried out etc.
Ion etching cleaning, plasma cleaning time are 60s, remove the dirt on the film circuit board；
Step 2 vacuumizes: after the completion of cleaning, a manipulator in the sample presentation room by the film circuit board 0 send to
In the reaction chamber, the reaction chamber is vacuumized so that the background vacuum of the reaction chamber is lower than 6.0 × 10-4Pa；
Step 3, pre-sputtering: being passed through argon gas to reaction chamber, and open radio-frequency power supply, and adjustable plate pressure and adaptation, setting are splashed
Penetrating machine power is 200W, and heating temperature gradually adjusts the balance of outlet and air inlet, make stable gas pressure in 10Pa to 250 DEG C.It opens
Shielding power supply carries out pre-sputtering to TiW target, and the oxide layer of TiW target material surface or other impurities ingredient are eliminated.Adjust institute
Stating argon gas flow is 100sccm, and the pre-sputtering time is 60s；
Step 4, sputtering: start starter sputtering after pre-sputtering, it is glutinous to form one layer of TiW for sputtering on film circuit board
Attached layer 2b, the TiW sputtering condition are as follows: sputtering power 200W, sputtering time 240S, sputtering pressure 10Pa；Gas flow are as follows:
Argon gas=100sccm.The TiW adhesion layer 2b thickness are as follows:
Step 5, pressure regulation: the argon gas inside reaction chamber is extracted out, is begun to again after the value that vacuum degree reaches former setting
Inflation.
Step 6, circulation sequentially form the barrier layer a Ni 3b and an Au conductor layer 4b:
1) it is passed through argon gas into reaction chamber, gradually adjusts the balance of outlet and air inlet, makes stable gas pressure required for experiment
Operating air pressure on, open shielding power supply and pre-sputtering carried out to Ni target, start starter sputtering after pre-sputtering, power supply sputters Ni
Target, one barrier layer the Ni 3b of magnetron sputtering on TiW adhesion layer 2b.The Ni sputtering condition are as follows: when sputtering power 400W, sputtering
Between be 900S, sputtering pressure 10Pa；Gas flow (sccm): argon gas=100；The barrier layer the Ni 3b thickness are as follows: 1.0 ±
0.3(μm)；By the argon gas extraction inside reaction chamber, start to inflate again after the value that vacuum degree reaches former setting.
2) it is passed through argon gas into reaction chamber, gradually adjusts the balance of outlet and air inlet, makes stable gas pressure required for experiment
Operating air pressure on, open shielding power supply and pre-sputtering carried out to Au target, start starter sputtering after pre-sputtering, power supply sputters Au
Target, the one Au conductor layer 4b of magnetron sputtering on the barrier layer the Ni 3b.The Au sputtering condition are as follows: sputtering power 200W, sputtering
Time 240S, sputtering pressure 10Pa；Gas flow (sccm): argon gas=100；The Au conductor layer 4b thickness are as follows: 2.0 ±
0.5(μm)。
Step 7, pumping cooling: extracting gas in the reaction chamber out, it is to be sputtered after the completion of film circuit board 0 it is naturally cold
But to after 150 DEG C, the manipulator send the film circuit board after the completion of sputtering to the sample presentation room, it is artificial take out described in
Film circuit board.
The splash-proofing sputtering metal coating is met using target purity: TiW:99.9%；Ni:99.9%；Au:99.99%.
The present embodiment forms thin film circuit a B, the thin film circuit B and includes film circuit board 0 and be formed in described thin
Splash-proofing sputtering metal coating on film circuit substrate, the splash-proofing sputtering metal coating include being formed by above-mentioned splash-proofing sputtering metal coating from inside to outside
The barrier layer TiW adhesion layer 2b, Ni 3b and Au the conductor layer 4b that method is formed.The thin film circuit B is not suitable for high frequency and uses, especially
It is millimere-wave band, welding characteristic supports the welding of the solder containing Sn；High temperature limit is up to 450 DEG C.
Embodiment 3
A kind of thin film circuit splash-proofing sputtering metal coating shaping method provided in this embodiment comprising following steps:
Step 1, cleaning: material requested and the film circuit board of size 0 are put into a sample presentation room of a sputter, will
Required TiW and Au target is put into a sample presentation room of sputter, carries out plasma to the film circuit board 0 in the sample presentation room
Etch cleaner, plasma cleaning time are 60s, remove the dirt on the film circuit board 0；
Step 2 vacuumizes: after the completion of cleaning, a manipulator in the sample presentation room by the film circuit board 0 send to
In the reaction chamber, reaction chamber is vacuumized so that the background vacuum of sputter is lower than 6.0 × 10-4Pa；
Step 3, pre-sputtering: being passed through argon gas to reaction chamber, and open radio-frequency power supply, and adjustable plate pressure and adaptation, setting are splashed
Penetrate machine power be 200W, heating temperature to 250 DEG C it is constant, gradually adjust outlet and air inlet balance, make stable gas pressure in 10Pa.
It opens shielding power supply and pre-sputtering is carried out to TiW target, the oxide layer of TiW target material surface or other impurities ingredient are eliminated.It adjusts
Saving the argon gas flow is 100sccm, and the pre-sputtering time is 60s；
Step 4, sputtering: start starter sputtering after pre-sputtering, it is glutinous to form one layer of TiW for sputtering on film circuit board
Attached layer 2c, the TiW sputtering condition are as follows: sputtering power 200W, sputtering time 240S, sputtering pressure 10Pa；Gas flow are as follows:
Argon gas=100sccm.The TiW adhesion layer 2c thickness are as follows:
Step 5, pressure regulation: the argon gas inside reaction chamber is extracted out, is begun to again after the value that vacuum degree reaches former setting
Inflation.
Step 6, circulation form an Au conductor layer 4c: be passed through argon gas into reaction chamber, the told power of setting Au sputtering and when
Between, the balance of outlet and air inlet is gradually adjusted, makes stable gas pressure in 10Pa, opens shielding power supply and pre-sputtering is carried out to Au target, in advance
Start starter sputtering after sputtering, power supply sputters Au target, the one Au conductor layer 4c of magnetron sputtering on the barrier layer the Ni 3c.Institute
State Au sputtering condition are as follows: sputtering power 200W, sputtering time 240S, sputtering pressure 10Pa；Gas flow (sccm): argon gas=
100；The Au conductor layer 4c thickness are as follows: 2.0 ± 0.5 (μm).
Step 7C, pumping cooling: extracting the argon gas in the reaction chamber out, it is to be sputtered after the completion of film circuit board it is natural
After being cooled to 150 DEG C, the manipulator send the film circuit board after the completion of sputtering to the sample presentation room, manually takes out institute
State film circuit board.
The splash-proofing sputtering metal coating is met using target purity: TiW:99.9%；Au:99.99%.
The present embodiment forms thin film circuit a C, the thin film circuit C and includes film circuit board 0 and be formed in described thin
Splash-proofing sputtering metal coating on film circuit substrate 0, the splash-proofing sputtering metal coating include by above-mentioned splash-proofing sputtering metal coating shape from inside to outside
The TiW adhesion layer 2c and Au conductor layer 4c formed at method.The thin film circuit C high temperature resistant, no nickel influence, and are not suitable for welding containing Sn
The welding (except Au/Sn solder) of material is suitble to high frequency millimeter wave frequency section to use；High temperature limit is up to 400 DEG C.
Above description is only specific embodiment of the present invention, it will be appreciated by those of skill in the art that here only
It is for example, protection scope of the present invention is as defined in appended claims.Therefore with regard to the present patent application patent model
Same variation made by enclosing, still falls within the range that the present invention is covered.
Claims (6)
1. the forming method of a kind of thin film circuit and its splash-proofing sputtering metal coating, the splash-proofing sputtering metal coating is TiW/Au, TiW/Ni/
The composite film of Au or TaN/TiW/Ni/Au, which is characterized in that the splash-proofing sputtering metal coating shaping method of the thin film circuit includes
Following steps:
Step 1, cleaning: the film circuit board and the metal targets of material requested and size are respectively put into a sputter
A sample presentation room and a reaction chamber in, by the film circuit board in the sample presentation room using plasma etching clean, removal
Dirt on the film circuit board；
Step 2 vacuumizes: after the completion of cleaning, the manipulator in the sample presentation room send the film circuit board to described
In reaction chamber, reaction chamber is vacuumized so that the vacuum degree of reaction chamber is lower than 6.0 × 10-4Pa；
Step 3, pre-sputtering: being passed through argon gas or argon gas nitrogen mixture to reaction chamber, be arranged each metal layer sputtering power and
Sputtering time, heating temperature to 250 DEG C it is constant,；Open shielding power supply carry out pre-sputtering, by the oxide layer of target material surface or its
He eliminates impurity component；
Step 4, sputtering: start starter sputtering after pre-sputtering, sputtering forms a splash-proofing sputtering metal on film circuit board
Coating；
Step 5, pressure regulation: by inside reaction chamber argon gas or argon gas nitrogen mixture extract out, when vacuum degree reaches the value of former setting
After begin to re-fill required working gas；
Step 6, circulation: circulation step 3,4,5, until forming the splash-proofing sputtering metal coating of setting；
Step 7, pumping cooling: gas in the reaction chamber is extracted out, the film circuit board after the completion of sputtering naturally cools to 150
After DEG C, substrate is taken out；
The sputtering condition of the metal targets meets respectively:
TaN: sputtering power 200W, sputtering time 240S, sputtering pressure 10Pa, gas flow (sccm) ratio: nitrogen:
Argon gas=2:100；
TiW: sputtering power 200W, sputtering time 240S, sputtering pressure 10Pa, gas flow are argon gas=100sccm；
Ni: sputtering power 400W, sputtering time 900S, sputtering pressure 10Pa, gas flow are argon gas=100sccm；
Au: sputtering power 200W, sputtering time 240S, sputtering pressure 10Pa, gas flow are argon gas=100sccm.
2. the forming method of thin film circuit splash-proofing sputtering metal coating as described in claim 1, which is characterized in that the splash-proofing sputtering metal
Coating is met using target purity: Ta:99.9%；TiW:99.9%；Ni:99.9%；Au:99.99%.
3. the forming method of thin film circuit splash-proofing sputtering metal coating as described in claim 1, which is characterized in that the plasma is carved
Erosion scavenging period is 60s.
4. the forming method of thin film circuit splash-proofing sputtering metal coating as described in claim 1, which is characterized in that the metallic diaphragm
Thickness range be respectively as follows:Ni:1.0 ± 0.3 (μ
M), Au:2.0 ± 0.5 (μm).
5. the forming method of thin film circuit splash-proofing sputtering metal coating as described in claim 1, which is characterized in that when the pre-sputtering
Between be 60s.
6. a kind of thin film circuit, including film circuit board and the splash-proofing sputtering metal coating being formed on the film circuit board,
The splash-proofing sputtering metal coating is the composite film of TiW/Au, TiW/Ni/Au or TaN/TiW/Ni/Au, which is characterized in that described to splash
Metal coating is penetrated to be formed using the forming method of any one of the claim 1-4 thin film circuit splash-proofing sputtering metal coating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811640042.6A CN109487211A (en) | 2018-12-29 | 2018-12-29 | A kind of forming method of thin film circuit and its splash-proofing sputtering metal coating |
Applications Claiming Priority (1)
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