CN104217831A - Preparation method for high-precision resister on LTCC base-plate surface - Google Patents
Preparation method for high-precision resister on LTCC base-plate surface Download PDFInfo
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- CN104217831A CN104217831A CN201410409113.7A CN201410409113A CN104217831A CN 104217831 A CN104217831 A CN 104217831A CN 201410409113 A CN201410409113 A CN 201410409113A CN 104217831 A CN104217831 A CN 104217831A
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Abstract
The invention relates to the field of manufacturing of LTCC, thin films and mixed base plates, and especially relates to a preparation method for a high-precision resister on LTCC base-plate surface. The preparation method mainly comprises grinding polishing of an LTCC base plate, cleaning, cavity filling, resistor figure making, electrode figure making, annealing and resistor resistance measuring. By employing the technical scheme, the resistance precision of the surface of the LTCC base plate can be improved from original 20%-30% to 5%-10%, the electrode soldering resistance and the film-layer adhesive force are effectively improved, and the line is relatively small, the line precision is relatively high and the application frequency is relatively high.
Description
Technical field
The present invention relates to LTCC, film and electric hybrid board and manufacture field, particularly a kind of preparation method of ltcc substrate high-precision surface resistance.
Background technology
Electronic equipment is gradually to miniaturization, lightweight, high frequency and multifunction future development, LTCC (LTCC) technology can 3 D stereo wiring and the number of plies is unrestricted, signaling rate is fast, loss is low, reliability is high and can realize the embedded set of passive component and reserved cavity realizes the technical advantages such as chip is embedding because having, and obtains apply more and more widely in a lot of field.But the method sintered after existing ltcc substrate sheet resistance adopts silk screen printing is usually prepared, and it exists some shortcomings: (1) resistance accuracy is lower, is generally 20% ~ 30%; (2) there is certain problem in film adhesion; (3) electrode soldering resistance is poor etc.In this context, we have invented the preparation method of the ltcc substrate sheet resistance that a kind of resistance accuracy is high, film adhesion good, electrode soldering resistance is good.
Summary of the invention
The object of the present invention is to provide the preparation method of the ltcc substrate sheet resistance that a kind of resistance accuracy is high, film adhesion good, electrode soldering resistance is good.
The object of the present invention is achieved like this, and a kind of preparation method of ltcc substrate high-precision surface resistance, is characterized in that comprising the following steps:
(1) surface of multilayer ltcc substrate is ground and polishing;
(2) ltcc substrate that step (1) processed is cleaned with acetone and ethanol successively respectively, do drying and processing afterwards;
(3) ltcc substrate after step (2) being processed takes out, and fills the cavity on ltcc substrate with photoresist, does drying and processing afterwards;
(4) ltcc substrate after step (3) being processed takes out, and produces the exposed photoetching offset plate figure in resistance position with photoresist on ltcc substrate surface;
(5) ltcc substrate after step (4) being processed is sent in magnetic control platform, sputtering tantalum nitride rete;
(6) ltcc substrate after step (5) being processed carries out heated baking, then puts into acetone stripping photoresist, cleans afterwards and drying and processing;
(7) ltcc substrate after step (6) being processed is sent in magnetic control platform, sputtered titanium tungsten-nickel-golden membranous layer;
(8) ltcc substrate after step (7) being processed takes out, and fills the cavity on ltcc substrate with photoresist, does drying and processing afterwards;
(9) ltcc substrate after step (8) being processed takes out, and produces the exposed photoetching offset plate figure of electrode area with photoresist on ltcc substrate surface;
(10) ltcc substrate after step (9) being processed, puts into gold plating liquid and carries out the gold-plated thickening of electrode area, clean afterwards and dry up process;
(11) ltcc substrate after step (10) being processed carries out process of removing photoresist;
(12) position beyond the ltcc substrate top electrode after step (11) being processed is carried out wet method successively and is carved gold, wet method nickel at quarter and wet method titanium tungsten at quarter;
(13) ltcc substrate after step (12) being processed carries out annealing in process;
(14) measurement of sheet resistance resistance is carried out to the ltcc substrate after step (13) process.
Complete the preparation of ltcc substrate sheet resistance.
Wherein, the ltcc substrate processed step (1) described in step (2) carries out cleaning with acetone and ethanol respectively successively and comprises the following steps:
(201) ltcc substrate acetone is soaked 3 times, soak and total time be not less than 30min, the initial and last 1min ~ 3min of first pass immersion process carries out ultrasonic wave process; Last 1min ~ the 3min of second time and the 3rd time immersion process carries out ultrasonic wave process;
(202) ltcc substrate after step (201) being processed takes out, then puts into ethanol immersion 2 times, and soak and total time be not less than 10min, the initial 1min often all over immersion process carries out ultrasonic wave process.
Wherein, the cavity of filling on ltcc substrate with photoresist described in step (3) and step (8) is specially: to be injected into by photoresist with syringe in the cavity on ltcc substrate, and makes that the surface of photoresist and ltcc substrate are surperficial keeps concordant.
Wherein, step (4) specifically comprises even glue, front baking, resistance pattern expose, develop, wash, dry up and go remaining glue process with plasma.
Wherein, the heated baking of step (6) be specially ltcc substrate is placed in 80 DEG C ~ 100 DEG C hot plate on toast 1min ~ 3min.
Wherein, step (9) specifically comprises even glue, front baking, electrode pattern expose, develop, wash, dry up, plasma removes remaining glue and rear baking process.Rear baking temperature should a little less than pre-bake temperature, and the rear baking time should be 5 times ~ 6 times of front baking time.
Wherein, in step (10), wet method carves gold gold solution formula at quarter used is KI 7g ~ 15g, iodine 5g ~ 10g, isopropyl alcohol 40mL ~ 60mL, deionized water 50mL ~ 90mL.
Wherein, the nickel solution formula at quarter that in step (10), wet method carves nickel used is potassium bichromate 5g ~ 15g, hydrochloric acid 5mL ~ 15mL, deionized water 100mL ~ 150mL.
Advantage of the present invention:
The present invention is applied to stripping technology and thin film technique in the processing of ltcc substrate sheet resistance, and heated baking, wet method are carved in gold solution formula, wet method nickel solution formula at quarter etc. and are innovated before ltcc substrate cleaning method, the filling of ltcc substrate cavity, photoresist lift off, compared with prior art, the beneficial effect obtained is:
(1) ltcc substrate sheet resistance resistance accuracy is high, is generally 5% ~ 10%;
(2) soldering resistance of electrode is good;
(3) film adhesion is good;
(4) lines are less, lines precision is higher;
(5) applying frequency is higher.
Embodiment
A kind of preparation method's embodiment of ltcc substrate high-precision surface resistance is as follows:
(1) prepare multilayer ltcc substrate, with grinder and polishing machine, ltcc substrate surface is ground and polishing;
(2) the ltcc substrate acetone that step (1) processed is soaked 3 times, soak and total time be not less than 30min, the initial and last 1min ~ 3min of first pass immersion process carries out ultrasonic wave process; Last 1min ~ the 3min of second time and the 3rd time immersion process carries out ultrasonic wave process; Taken out from acetone by ltcc substrate, then put into ethanol immersion 2 times, soak and total time be not less than 10min, the initial 1min often all over immersion process carries out ultrasonic wave process; Ltcc substrate is taken out from ethanol, uses deionized water cleaning showers; With nitrogen, ltcc substrate is dried up; Ltcc substrate is placed on hot plate and carries out drying and processing;
(3) ltcc substrate after step (2) being processed takes out, with syringe photoresist is injected in the cavity on ltcc substrate, and make the surface of photoresist keep concordant with ltcc substrate surface, ltcc substrate is placed on hot plate and carries out drying and processing;
(4) spin coating photoresist on the ltcc substrate of sol evenning machine after step (2) process is used; Take out ltcc substrate, be placed on hot plate and carry out front baking process; Ltcc substrate is taken out, carries out the exposure of resistance pattern with mask aligner; Ltcc substrate is taken out, puts into developer solution and develop; Ltcc substrate is taken out, rinses with deionized water; With nitrogen, ltcc substrate is dried up; Ltcc substrate is put into plasma degumming machine and remove remaining glue;
(5) ltcc substrate after step (4) being processed is sent in magnetic control platform, sputtering tantalum nitride rete;
(6) ltcc substrate after step (5) being processed takes out, and the hot plate being placed in 80 DEG C ~ 100 DEG C toasts 1min ~ 3min; Ltcc substrate is taken out, puts into acetone stripping photoresist; Ltcc substrate is taken out, with deionized water rinsing; With nitrogen, ltcc substrate is dried up; Ltcc substrate is placed on hot plate and carries out drying and processing;
(7) ltcc substrate after step (6) being processed is sent in magnetic control platform, sputtered titanium tungsten-nickel-golden membranous layer;
(8) ltcc substrate after step (7) being processed takes out, and to be injected into by photoresist in the cavity on ltcc substrate with syringe, and makes that the surface of photoresist and ltcc substrate are surperficial keeps concordant; Ltcc substrate is placed on hot plate and carries out drying and processing;
(9) use spin coating photoresist on the ltcc substrate of sol evenning machine after step (8) process, be placed on hot plate and carry out front baking process; Ltcc substrate is taken out, carries out the exposure of electrode pattern with mask aligner; Ltcc substrate is taken out, puts into developer solution and develop, carry out afterwards washing and drying up process; Ltcc substrate is taken out, puts into plasma degumming machine and remove remaining glue; Taken out by ltcc substrate, carry out rear bakings and process, rear baking temperature should a little less than pre-bake temperature, and the rear baking time should be 5 times ~ 6 times of front baking time;
(10) ltcc substrate after step (9) being processed, puts into gold plating solution and carries out electrogilding thickening; Take out ltcc substrate, rinse with deionized water; With nitrogen, ltcc substrate is dried up;
(11) ltcc substrate after step (10) being processed is put into the liquid that removes photoresist and is carried out process of removing photoresist; Take out ltcc substrate, rinse with deionized water; With nitrogen, ltcc substrate is dried up;
(12) ltcc substrate after step (11) being processed is put into wet method gold solution at quarter and is etched layer gold, and carving gold solution formula is KI 7g ~ 15g, iodine 5g ~ 10g, isopropyl alcohol 40mL ~ 60mL, deionized water 50mL ~ 90mL; After layer gold etching to be sputtered is clean, takes out ltcc substrate, rinse with deionized water; With nitrogen, ltcc substrate is dried up; Ltcc substrate is put into wet method nickel solution at quarter and etch nickel dam, carving nickel solution formula is potassium bichromate 5g ~ 15g, hydrochloric acid 5mL ~ 15mL, deionized water 100mL ~ 150mL; After nickel dam etching to be sputtered is clean, takes out ltcc substrate, rinse with deionized water; With nitrogen, ltcc substrate is dried up; Ltcc substrate is put into wet method titanium tungsten at quarter solution and etch titanium tungsten layer, after titanium tungsten layer etching to be sputtered is clean, takes out ltcc substrate, rinse with deionized water; With nitrogen, ltcc substrate is dried up;
(13) ltcc substrate after step (12) being processed carries out annealing in process;
(14) measurement of sheet resistance resistance is carried out to the ltcc substrate after step (13) process.
Complete the preparation of ltcc substrate high-precision surface resistance.
In embodiment, we prepare resistance with said method on ltcc substrate surface, and measure resistance, and resistance accuracy is 5% ~ 10%.
Claims (8)
1. a preparation method for ltcc substrate high-precision surface resistance, is characterized in that comprising the following steps:
(1) surface of multilayer ltcc substrate is ground and polishing;
(2) ltcc substrate that step (1) processed is cleaned with acetone and ethanol successively respectively, do drying and processing afterwards;
(3) ltcc substrate after step (2) being processed takes out, and fills the cavity on ltcc substrate with photoresist, does drying and processing afterwards;
(4) ltcc substrate after step (3) being processed takes out, and produces the exposed photoetching offset plate figure in resistance position with photoresist on ltcc substrate surface;
(5) ltcc substrate after step (4) being processed is sent in magnetic control platform, sputtering tantalum nitride rete;
(6) ltcc substrate after step (5) being processed carries out heated baking, then puts into acetone stripping photoresist, cleans afterwards and drying and processing;
(7) ltcc substrate after step (6) being processed is sent in magnetic control platform, sputtered titanium tungsten-nickel-golden membranous layer;
(8) ltcc substrate after step (7) being processed takes out, and fills the cavity on ltcc substrate with photoresist, does drying and processing afterwards;
(9) ltcc substrate after step (8) being processed takes out, and produces the exposed photoetching offset plate figure of electrode area with photoresist on ltcc substrate surface;
(10) ltcc substrate after step (9) being processed, puts into gold plating liquid and carries out the gold-plated thickening of electrode area, clean afterwards and dry up process;
(11) ltcc substrate after step (10) being processed carries out process of removing photoresist;
(12) position beyond the ltcc substrate top electrode after step (11) being processed is carried out wet method successively and is carved gold, wet method nickel at quarter and wet method titanium tungsten at quarter;
(13) ltcc substrate after step (12) being processed carries out annealing in process;
(14) measurement of sheet resistance resistance is carried out to the ltcc substrate after step (13) process.
Complete the preparation of ltcc substrate sheet resistance.
2. the preparation method of a kind of ltcc substrate high-precision surface resistance according to claim 1, is characterized in that: the ltcc substrate processed step (1) described in step (2) carries out cleaning with acetone and ethanol respectively successively and comprises the following steps:
(201) ltcc substrate acetone is soaked 3 times, soak and total time be not less than 30min, the initial and last 1min ~ 3min of first pass immersion process carries out ultrasonic wave process; Last 1min ~ the 3min of second time and the 3rd time immersion process carries out ultrasonic wave process;
(202) ltcc substrate after step (201) being processed takes out, then puts into ethanol immersion 2 times, and soak and total time be not less than 10min, the initial 1min often all over immersion process carries out ultrasonic wave process.
3. the preparation method of a kind of ltcc substrate high-precision surface resistance according to claim 1, it is characterized in that: the cavity of filling on ltcc substrate with photoresist described in step (3) and step (8) is specially: to be injected into by photoresist with syringe in the cavity on ltcc substrate, the surface of photoresist should keep concordant with ltcc substrate surface.
4. the preparation method of a kind of ltcc substrate high-precision surface resistance according to claim 1, is characterized in that: step (4) specifically comprises even glue, front baking, resistance pattern expose, develop, wash, dry up and go remaining glue process with plasma.
5. the preparation method of a kind of ltcc substrate high-precision surface resistance according to claim 1, is characterized in that: the heated baking of step (6) be specially ltcc substrate is placed in 80 DEG C ~ 100 DEG C hot plate on toast 1min ~ 3min.
6. the preparation method of a kind of ltcc substrate high-precision surface resistance according to claim 1, is characterized in that: step (9) specifically comprises even glue, front baking, electrode pattern expose, develop, wash, dry up, plasma removes remaining glue and rear baking process.Rear baking temperature should a little less than pre-bake temperature, and the rear baking time should be 5 times ~ 6 times of front baking time.
7. the preparation method of a kind of ltcc substrate high-precision surface resistance according to claim 1, is characterized in that: in step (10), wet method carves gold gold solution formula at quarter used is KI 7g ~ 15g, iodine 5g ~ 10g, isopropyl alcohol 40mL ~ 60mL, deionized water 50mL ~ 90mL.
8. the preparation method of a kind of ltcc substrate high-precision surface resistance according to claim 1, is characterized in that: the nickel solution formula at quarter that in step (10), wet method carves nickel used is potassium bichromate 5g ~ 15g, hydrochloric acid 5mL ~ 15mL, deionized water 100mL ~ 150mL.
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Cited By (8)
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| CN105428250A (en) * | 2015-11-25 | 2016-03-23 | 中国电子科技集团公司第二十九研究所 | LTCC substrate surface cavity planarization processing method |
| CN106298120A (en) * | 2016-08-30 | 2017-01-04 | 广东爱晟电子科技有限公司 | Highly reliable titanium tungsten gold electrode chip of a kind of high accuracy and preparation method thereof |
| CN107275016A (en) * | 2017-06-28 | 2017-10-20 | 中国振华集团云科电子有限公司 | The method and resistor obtained by this method of protective layer are formed on a resistor |
| CN108987010A (en) * | 2018-07-10 | 2018-12-11 | 广东风华高新科技股份有限公司 | A kind of oil level resistor disc and its manufacturing method |
| CN109487211A (en) * | 2018-12-29 | 2019-03-19 | 广州创天电子科技有限公司 | A kind of forming method of thin film circuit and its splash-proofing sputtering metal coating |
| CN109659104A (en) * | 2018-12-28 | 2019-04-19 | 广东爱晟电子科技有限公司 | A kind of highly reliable two-sided Heterogeneous Composite electrode heat sensitive chip |
| CN109841366A (en) * | 2019-02-25 | 2019-06-04 | 广东风华高新科技股份有限公司 | A kind of preparation method of resistor termination electrode filming |
| CN111683459A (en) * | 2020-05-22 | 2020-09-18 | 中国电子科技集团公司第二十九研究所 | Manufacturing method for high-precision fine lines on high-flat surface of LTCC substrate |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105428250A (en) * | 2015-11-25 | 2016-03-23 | 中国电子科技集团公司第二十九研究所 | LTCC substrate surface cavity planarization processing method |
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| CN106298120A (en) * | 2016-08-30 | 2017-01-04 | 广东爱晟电子科技有限公司 | Highly reliable titanium tungsten gold electrode chip of a kind of high accuracy and preparation method thereof |
| CN107275016A (en) * | 2017-06-28 | 2017-10-20 | 中国振华集团云科电子有限公司 | The method and resistor obtained by this method of protective layer are formed on a resistor |
| CN107275016B (en) * | 2017-06-28 | 2019-09-20 | 中国振华集团云科电子有限公司 | The method of formation protective layer and resistor obtained by this method on a resistor |
| CN108987010A (en) * | 2018-07-10 | 2018-12-11 | 广东风华高新科技股份有限公司 | A kind of oil level resistor disc and its manufacturing method |
| CN109659104A (en) * | 2018-12-28 | 2019-04-19 | 广东爱晟电子科技有限公司 | A kind of highly reliable two-sided Heterogeneous Composite electrode heat sensitive chip |
| CN109487211A (en) * | 2018-12-29 | 2019-03-19 | 广州创天电子科技有限公司 | A kind of forming method of thin film circuit and its splash-proofing sputtering metal coating |
| CN109841366A (en) * | 2019-02-25 | 2019-06-04 | 广东风华高新科技股份有限公司 | A kind of preparation method of resistor termination electrode filming |
| CN111683459A (en) * | 2020-05-22 | 2020-09-18 | 中国电子科技集团公司第二十九研究所 | Manufacturing method for high-precision fine lines on high-flat surface of LTCC substrate |
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