CN105259733B - One kind being used for the patterned flexible mask plate preparation method of curved surface - Google Patents
One kind being used for the patterned flexible mask plate preparation method of curved surface Download PDFInfo
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Abstract
The present invention discloses a kind of preparation method for the patterned flexible mask plate of curved surface, and step: substrate surface is pre-processed；Dry film is sticked in substrate surface；One layer of Cr/Cu seed layer is sputtered on dry film；Electroplated Ni metal film is in substrate seed layer；It is impregnated in NaOH solution, ultrasonic treatment release Ni metal film；Ni metal mask is fixed on glass, pastes one layer of dry film；Development treatment is exposed to dry film；Performing etching or being cut by laser makes Ni metallic film pattern；Ni metal film is attached on substrate again, metal pattern needed for sputtering；Ni film is removed, the graphic structure of required metal is obtained.Present invention uses flexible metal exposure masks instead of traditional hard exposure mask, and fine graphic structure can be produced in curved surface.The graphical of curved surface can be achieved in the present invention, and flexible Ni film is reusable, at low cost, flexible and convenient operation.
Description
Technical field
It is the present invention relates to micro Process field, in particular to a kind of to carry out curved surface shading type figure using flexible metal mask plate
The manufacturing method of change belongs to micro-nano processing technique field.
Background technique
Micro Process is the foundation stone of modern microelectronic technology.It is microprocessor, memory device and other information microelectronics device
The basis of part.The field that it will also be increasingly being applied in addition to microelectronics.Existing photoetching technique is in Integrated circuit IC
And micro-electromechanical system (MEMS), organic semiconductor and digital memory device are widely used.High-resolution microlithography technology is being permitted
More research aspects have progradation.Current some micro-processing technologies have grown up, such as: Soft lithograph, coining
(Embossing or Imprinting), injection moulding (Inject molding), silk-screen printing, inkjet printing etc..These methods
Have been used for the micro-structure and nanostructure that make high quality.
However, MEMS/IC component is only because the MEMS/IC technique of standard only allows the microfabrication on plate
It can be placed on planar chip, technology is developed for many years, it is quite mature.And patterning process is carried out on curved surface to be had and centainly grinds
Study carefully, but remain in low reliability can not volume production situation.
Literature search discovery by the prior art, China Patent Publication No. (CN201510037978) are entitled " soft
Property, stretchable, deformable surface Lithographic template and photolithography method and device " invention, mainly have by invention realization
Photoetching is carried out in complex-curved substrate, the comparison of flexible mask plate is complicated.Need the silica gel and work of low Young's modulus
For light-blocking metal material, metal material is deposited on silica gel by the method for sputtering or vapor deposition.Due to use silicon substrate as
Mask plate realizes mask pattern, higher cost, and can not realize complex figure on curved surface.
And Ahn C H is in paper " Direct fabrication of thin film gold resistance
temperature detection sensors on a curved surface using a flexible dry film
photoresist and their calibration up to 450℃[J].Journal of Micromechanics&
In Microengineering ", the direct patterning process technology of the elastic film photoresist used is mainly aoxidized in cylinder
The direct metal patternization of film metal is carried out on aluminium bar.Mainly, depositing Ti and Ni metal layer on curved surface.Then, with one
The negtive photoresist of a 30 μ m-thick is covered on flat Silicon Wafer, carries out ultraviolet photoetching on a 2D mask plate.Uv-exposure
Negtive photoresist is unloaded from flat wafer, and is laminated on cylinder oxidation stick.To the negtive photoresist exposed being attached in alumina rod into
Row development.It is exposed to extraneous part wet etching to the Ni/Ti metal layer of deposition, realizes graphically, thus reservation
Dry film is removed with NaOH solution.But the program uses the negtive photoresist exposed abutting metal layer directly graphical, flexible negtive photoresist
It removes from Silicon Wafer, is then laminated on curved surface.This operating procedure executes difficulty, and is difficult to needed for realizing in proportion by 1:1
Figure.
Based on this, if can provide a kind of curved surface profiling exposure mask can still be able to maintain and substrate same curvature after stress release
Shape must be significant to carry out the graphical manufacturing process of shading type.
Summary of the invention
In view of the above shortcomings of the prior art, it is patterned soft for curved surface that the purpose of the present invention is to provide one kind
The preparation method of property mask plate, properties are excellent.Present invention uses flexible metal exposure masks instead of traditional hard exposure mask,
Fine graphic structure can be produced in curved surface, it can be achieved that curved surface it is graphical, flexible Ni film is reusable, cost
It is low, flexible and convenient operation.
To achieve the above object, the present invention is implemented with the following technical solutions:
A kind of preparation method for the patterned flexible mask plate of curved surface is completed according to the following steps:
1) curved substrate surface is polished flat, to the rough polishing light processing of curved substrate surface, removes surface with acetone solvent
Greasy dirt, and with electrochemical degreasing, ultrasonic cleaning means make clean surface；
2) two-sided film coating process, patch are carried out on the curved substrate surface by step 1) processing using lamination patch dry film technique
After film, is dried after progress, obtain film layer；
3) one layer of Cr/Cu seed layer is sputtered in film layer, obtains the curved substrate containing seed layer；
4) electroplated Ni metal film is added before electroplated Ni metal film using dispensing method in the seed layer of curved substrate
Relief hole；
5) curved substrate for obtaining step 4) is dipped in NaOH solution ultrasound release Ni metal film, and Ni metal film is fixed on
Glass, dry film is sticked in hot pressing on Ni metal film；
6) to being exposed developing process process through the dry film on step 5) treated Ni metal film, the figure after development
Shape uses etching technics, realizes the graphical of Ni metal film, obtains patterned metal Ni exposure mask.
Further, the method is further processed to obtain the figure knot of metal after obtaining patterned metal Ni exposure mask
Structure, comprising:
7) the patterned metal Ni exposure mask of step 6) is attached on the curved substrate, metal pattern needed for sputtering；
8) W metal exposure mask in step 7) is removed from the curved substrate, obtains required gold on the curved substrate surface
The graphic structure of category.
Preferably, when executing the step 3), one layer of Cr/Cu seed layer is sputtered using the method for magnetron sputtering.
Preferably, when executing the step 3), Cr metal layer thickness 1~100nm, Cu metal layer thickness be 1~
200nm。
Preferably, when executing the step 4), using Kapton Tape or photoresist dispensing in seed metal layer
Surface is as relief hole.
Preferably, when executing the step 5), Ni thickness of metal film is 1~60 μm.
Preferably, when executing the step 6), matched etching liquid is by H in etching technics2O, mass fraction is 1~10%
The HCl solution of solution, the H that mass fraction is 1~50% solution2O2Solution is constituted, and three's mass ratio is 100:100:10.
Preferably, when executing the step 8), it is residual to remove surface for W metal exposure mask hydrogen peroxide and ammonium hydroxide mixed solution
Remaining Cu removes Cr with the potassium ferricyanide and sodium hydroxide mixed solution, and clean Ni film is covered as the graphical shading type of next curved surface
Film is reused.
Compared with prior art, the beneficial effects of the present invention are:
1, the graphical of complex devices can be realized on curved surface.The technique of common IC/MEMS device be in the plane into
Capable.The present invention is to realize that the transfer of figure repeats printing on curved surface by flexible metal mask plate.
2, use Ni metal film as flexible exposure mask, metal film, which has, centainly has stress by oneself, and metal film applies in no external force
In the case where, can restore with original consistent shape of curved substrate curvature, be then covered on substrate, carry out sputtering direct figure
Change.The own stress of flexible exposure mask restores it and the consistent shape of curved substrate curvature.To enable this technique to make photoetching
Figure high fidelity realizes graphical transfer on curved surface.
3, shading type exposure mask can avoid carrying out sputtering figure directly on substrate using photoetching in addition to mask plate preparation
Change, the processing step for avoiding exposure development technique from causing is cumbersome.
Detailed description of the invention
Upon reading the detailed description of non-limiting embodiments with reference to the following drawings, other feature of the invention,
Objects and advantages will become more apparent upon:
Fig. 1 is the flow diagram of a specific embodiment of preparation method of the present invention；
Fig. 2 is the structural schematic diagram of the core process W metal film applied to curved surface photoetching being detached from curved surface；
Fig. 3 is the technique diagrammatic cross-section that nickel film of the present invention is the flexible graphical production method of exposure mask curved surface shading type.
Specific embodiment
The present invention is described in detail combined with specific embodiments below.Following embodiment will be helpful to the technology of this field
Personnel further understand the present invention, but the invention is not limited in any way.It should be pointed out that the ordinary skill of this field
For personnel, without departing from the inventive concept of the premise, various modifications and improvements can be made.These belong to the present invention
Protection scope.
Curved substrate in following embodiment, pad pasting front surface through polishing flat, to workpiece surface rough polishing light processing,
Surface and oil contaminant is removed with acetone solvent, and with electrochemical degreasing, ultrasonic cleaning means make clean surface；Then carry out using.
Embodiment 1:
Etching W metal film is for being deposited on one layer of thermistor wire sensor structure on insulation curved surface.
The first step carries out film coating process to curved surface convex-concave two sides.Guarantee that leaf cleaning is clean before pad pasting, when pad pasting it is noted that
Bubble is avoided to generate.Pad pasting finishes, and is put into baking oven, carries out baking 30min with 90 DEG C.
Second step fixes curved surface with Kapton Tape, places, sputtered, and sputters Cr/Cu seed layer.Cr gold
Category thickness degree 1~100nm, Cu metal layer thickness is 1~200nm.
Third step, the electroplated Ni metal layer in curved substrate seed layer.Photoresist is put on curved surface to be used to prepare relief hole.
Plating need to carry out under 50 DEG C of environment of water-bath, and workpiece connects cathode, and Ni plate connects anode as sacrificial layer, respectively puts in the two sides of electroplating bath
Set one.Depending on electroplating current parameter is with plating area, electroplating thickness increases at any time.Electroplating current density is 10mA/cm2。
4th step is impregnated in 5%NaOH solution, is cleaned with the supersonic cleaning machine of 40KHz, and Ni metal layer is discharged.Ni
Metal layer thickness is 1~60 μm.
5th step attaches to glass wafer at Ni metal layer edge with Kapton Tape, and Ni metal layer is not changed certainly
Have and closely flatten in the case of stress, sticks dry film, be exposed development.
6th step performs etching Ni metal film, then the W metal exposure mask etched is attached on curved substrate, wherein
Matched etching liquid is H in chemical etching process2O and mass fraction are the HCl solution of 1~10% solution, mass fraction is 1~
The H of 50% solution2O2The ratio of solution is 100:100:10.
7th step, then the metal pattern to be printed is engraved on curved substrate by sputtering plating process.
8th step, the W metal exposure mask on curved substrate after sputtering is graphical are removed, and cleaning is placed.
This example carries out curved surface deposition using flexible metal film, and process flow need to prepare W metal film as mask plate,
Subsequent technique is simple, reproducible, and cost is relatively low.
Embodiment 2:
Laser cut metal Ni film pattern is used for shading type curved surface exposure mask, is deposited on one layer of thermistor wire on insulation curved surface
Sensor structure.
The first step carries out film coating process to curved surface convex-concave two sides.Guarantee that leaf cleaning is clean before pad pasting, when pad pasting it is noted that
Bubble is avoided to generate.Pad pasting finishes, and is put into baking oven, carries out baking 30min with 90 DEG C.
Second step fixes curved surface with Kapton Tape, places, sputtered.Sputter Cr/Cu seed layer.Cr gold
Category thickness degree 1~100nm, Cu metal layer thickness is 1~200nm.
Third step, the electroplated Ni metal layer in curved substrate seed layer.Photoresist is put on curved surface to be used to prepare relief hole.
Plating need to carry out under 50 DEG C of environment of water-bath, and workpiece connects cathode, and Ni plate connects anode as sacrificial layer, respectively puts in the two sides of electroplating bath
Set one.Depending on electroplating current parameter is with plating area, electroplating thickness increases at any time.Electroplating current density is 10mA/cm2。
4th step is impregnated in 5%NaOH solution, is cleaned with the supersonic cleaning machine of 40KHz, and Ni metal layer is discharged.
After the film preparation of curved surface nickel is good, the graphical of laser processing resistance wire is carried out to it for 5th step.
6th step is attached to Ni metal mask on curved surface, sputters to it, and sputtering condition is Cr thickness 20nm, Cu thickness
200nm, after the polyimides adhesive plaster and Ni template of protection blade are removed, the resistance wire structure graph that is formed on curved surface.
7th step, the W metal exposure mask on curved substrate after sputtering is graphical are removed, and cleaning is placed.
This example carries out curved surface deposition using flexible metal film, and process flow need to prepare W metal film as mask plate,
Subsequent technique is simple, reproducible, and cost is relatively low.
By the specific descriptions of above embodiments, the purpose of the present invention, technical solution and implementation result are further illustrated.
It is to be appreciated that above-described embodiment is section Example of the invention, the present invention can also have other embodiments, than
Such as conversion process parameter and pass through existing common technology means replace respective operations.The description above is not considered as pair
Limitation of the invention.After those skilled in the art have read above content, all will for a variety of modifications and substitutions of the invention
It is obvious.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (7)
1. a kind of preparation method for the patterned flexible mask plate of curved surface, which is characterized in that the method includes following steps
It is rapid:
1) curved substrate surface is polished flat, to the rough polishing light processing of curved substrate surface, removes surface and oil contaminant with acetone solvent,
And with electrochemical degreasing, ultrasonic cleaning means make clean surface；
2) two-sided film coating process is carried out on the curved substrate surface by step 1) processing using lamination patch dry film technique, pad pasting is complete
Bi Hou dries after progress, obtains film layer；
3) one layer of Cr/Cu seed layer is sputtered in film layer, obtains the curved substrate containing seed layer；
4) the electroplated Ni metal film in the seed layer of curved substrate is added using dispensing method and is discharged before electroplated Ni metal film
Hole；
5) curved substrate for obtaining step 4) is dipped in NaOH solution ultrasound release Ni metal film, and Ni metal film is fixed on glass
Glass, dry film is sticked in hot pressing on Ni metal film；
6) developing process process is exposed to the dry film on step 5) treated Ni metal film, the figure after development is using carving
Etching technique realizes the graphical of Ni metal film, obtains patterned metal Ni exposure mask.
2. the method according to claim 1, wherein when executing the step 3), using the side of magnetron sputtering
Method sputters one layer of Cr/Cu seed layer.
3. according to the method described in claim 2, it is characterized in that, when executing the step 3), Cr metal layer thickness 1~
100nm, Cu metal layer thickness are 1~200nm.
4. the method according to claim 1, wherein when executing the step 5), Ni metal film with a thickness of 1
~60 μm.
5. method according to claim 1-4, which is characterized in that when executing the step 6), etching technics
Middle matched etching liquid is by H2O, mass fraction is the HCl solution of 1~10% solution, the H that mass fraction is 1~50% solution2O2
Solution is constituted, and three's mass ratio is 100:100:10.
6. method according to claim 1-4, which is characterized in that the method is covered obtaining patterned metal Ni
After film, it is further processed to obtain the graphic structure of metal, comprising:
7) the patterned metal Ni exposure mask of step 6) is attached on the curved substrate, metal pattern needed for sputtering；
8) Ni metal mask in step 7) is removed from the curved substrate, obtains required metal on the curved substrate surface
Graphic structure.
7. according to the method described in claim 6, it is characterized in that, when executing the step 8), W metal exposure mask dioxygen
Water and ammonium hydroxide mixed solution, remove the Cu of surface residual, remove Cr, clean Ni with the potassium ferricyanide and sodium hydroxide mixed solution
Film is reused as the graphical shading type exposure mask of next curved surface.
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| CN105858591B (en) * | 2016-03-29 | 2017-07-28 | 中国科学院高能物理研究所 | A kind of metal micro structure and preparation method thereof |
| CN107572834A (en) * | 2016-07-04 | 2018-01-12 | 正达国际光电股份有限公司 | A kind of bend glass processing technology |
| CN106517084B (en) * | 2016-12-16 | 2017-11-07 | 合肥工业大学 | A kind of preparation method of the axial direction circular micro coaxle metal structure parallel with substrate |
| CN106773527A (en) * | 2016-12-28 | 2017-05-31 | 东旭科技集团有限公司 | The exposure method of mask plate, exposure machine and glass substrate |
| CN107352502B (en) * | 2017-08-10 | 2020-05-19 | 南京航空航天大学 | Preparation method of biological binding pure titanium surface micro-bulge array structure |
| CN107585736B (en) * | 2017-08-28 | 2022-07-12 | 宁夏软件工程院有限公司 | Preparation method of curved surface hydrophobic microstructure |
| CN108681207A (en) * | 2018-05-14 | 2018-10-19 | 华中科技大学 | A kind of curved surface photoetching process based on transparent flexible thin-film material |
| CN113161738B (en) * | 2021-05-25 | 2021-08-31 | 中国电子科技集团公司第二十九研究所 | Preparation method of low-frequency broadband curved surface circuit |
| CN115811878B (en) * | 2022-12-05 | 2023-06-02 | 有研新材料股份有限公司 | Method for manufacturing curved surface random metal grid |
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| CN100570828C (en) * | 2007-07-12 | 2009-12-16 | 上海交通大学 | The method of etching aluminium nitride thin film micrographics |
| CN101693515B (en) * | 2009-10-30 | 2012-04-25 | 上海交通大学 | Preparation method of patternable thin polymer film in MEMS field |
| CN102779558B (en) * | 2012-08-14 | 2015-09-30 | 中国科学院高能物理研究所 | Grenz ray photomask and preparation method thereof |
| CN103676466B (en) * | 2012-09-14 | 2016-06-29 | 世禾科技股份有限公司 | The manufacture method of metallo-plastic multi-layer light shield |
| CN103268056A (en) * | 2013-05-10 | 2013-08-28 | 西安建筑科技大学 | Flexible mask plate and making method thereof |
| CN103698973A (en) * | 2013-12-17 | 2014-04-02 | 广西大学 | Preparation method of flexible photoetching mask plate |
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