CN105259733A - Preparation method for flexible mask plate used for patterning curved surface - Google Patents
Preparation method for flexible mask plate used for patterning curved surface Download PDFInfo
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- CN105259733A CN105259733A CN201510729248.6A CN201510729248A CN105259733A CN 105259733 A CN105259733 A CN 105259733A CN 201510729248 A CN201510729248 A CN 201510729248A CN 105259733 A CN105259733 A CN 105259733A
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Abstract
The invention discloses a preparation method for a flexible mask plate used for patterning a curved surface. The preparation method comprises the steps of pretreating a surface of a substrate; attaching a dry film to the surface of the substrate; sputtering a Cr/Cu seed layer on the dry film; electroplating a Ni metal film on the substrate seed layer; soaking into a NaOH solution, ultrasonic processing and releasing the Ni metal film; fixing a Ni metal mask on a glass, and attaching a dry film; exposing and the developing the dry film; etching or laser cutting for patterning the Ni metal film; then attaching the Ni metal film to the substrate, and spluttering a required metal pattern; and taking off the Ni film to obtain the required metal graphic structure. According to the preparation method, the flexible metal mask is used to replace the conventional hard mask, so that fine and delicate graphic structures can be manufactured on the surface of the curved surface; and in addition, the preparation method can realize the patterning of the curved surface, reuse of the flexible Ni film, low cost, and flexible and convenient operation.
Description
Technical field
The present invention relates to micro Process field, particularly one utilizes flexible metal mask plate to carry out the patterned manufacture method of curved surface shading type, belongs to micro-nano processing technique field.
Background technology
Micro Process is the foundation stone of modern microelectronic technology.It is the basis of microprocessor, memory device and out of Memory microelectronic component.The field that it also will be applied to except microelectronics more and more.Existing photoetching technique at integrated circuit (IC) and micro-electromechanical system (MEMS), organic semiconductor, and digital memory device is widely used.High-resolution microlithography technology has prograding in much research.Some micro-processing technologies grow up at present, as: Soft lithograph, impression (Embossing or Imprinting), injection moulding (Injectmolding), serigraphy, inkjet printing etc.These methods have been used to make high-quality microstructure and nanostructured.
But because the MEMS/IC technique of standard only allows microfabrication on flat board, MEMS/IC parts can only be placed on planar chip, to technical development for many years, quite ripe.And curved surface carries out patterning process and has certain research, but still rest on low reliability cannot the situation of volume production.
Literature search through prior art finds, China Patent Publication No. (CN201510037978), the invention that name is called " flexible, can stretch, deformable surface Lithographic template and photoetching method and device ", realize carrying out photoetching having in complex-curved substrate mainly through this invention, the comparison of its flexible mask plate is complicated.Need the silica gel of low Young modulus and as the metal material be in the light, metal material is deposited on silica gel by the method for sputtering or evaporation.Due to silicon substrate as mask plate, realize mask plate graphical, cost is higher, and cannot realize complex figure on curved surface.
And AhnCH is in paper " Directfabricationofthinfilmgoldresistancetemperaturedete ctionsensorsonacurvedsurfaceusingaflexibledryfilmphotore sistandtheircalibrationupto450 DEG C of [J] .JournalofMicromechanics & Microengineering ", the direct patterning process technology of elastic film photoresist used, mainly carries out the direct metal patternization of film metal on cylindrical shaped alumina rod.Mainly, depositing Ti and Ni metal level on curved surface.Then, overlay on flat Silicon Wafer with one 30 μm thick negative stickers, a 2D mask plate carries out ultraviolet photoetching.The negative glue of uv-exposure is unloaded by from flat wafer, and is laminated on cylinder oxidation rod.The negative glue exposed be attached in alumina rod is developed.Extraneous part wet etching is exposed to the Ni/Ti metal level of deposition, realizes graphical, thus the dry film NaOH solution retained is removed.But the program, uses the negative glue exposed to be close to metal level directly graphical, flexible negative glue is peeled off from Silicon Wafer, is then laminated on curved surface.This operation steps performs difficulty, and is difficult in proportion by the figure needed for 1:1 realization.
Based on this, if a kind of curved surface profiling mask can be provided still to keep the shape with substrate same curvature after stressed release, thus carry out the graphical manufacturing process of shading type, must be significant.
Summary of the invention
For prior art above shortcomings, the object of the present invention is to provide a kind of preparation method for the patterned flexible mask plate of curved surface, its properties is excellent.Present invention uses flexible metal mask and instead of traditional hard mask, can produce meticulous graphic structure, can realize the graphical of curved surface at curved surface, flexible Ni film is reusable, and cost is low, flexible and convenient operation.
For achieving the above object, the present invention realizes by the following technical solutions:
For a preparation method for the patterned flexible mask plate of curved surface, complete according to the following steps:
1) by smooth for curved substrate surface finish, to surface of the work rough polishing process, remove surface and oil contaminant with acetone solvent, and with electrochemical degreasing, ultrasonic cleaning means make clean surface;
2) lamination is adopted to paste dry film technique through step 1) the curved substrate surface that processes carries out Double-face adhesive membrane process, and after pad pasting, carry out rear baking, obtain thin layer;
3) on thin layer, sputter one deck Cr/Cu Seed Layer, obtain the curved substrate containing Seed Layer;
4) electroplated Ni metal film in the Seed Layer of curved substrate, before electroplated Ni metal film, dispensing method adds release aperture;
5) by step 4) curved substrate that obtains is dipped in NaOH solution ultrasonic release Ni metal film, and Ni metal film is fixed on glass, and on Ni metal film, dry film is sticked in hot pressing;
6) to through step 5) dry film on curved substrate after process carries out exposure imaging technological process, and the figure after development adopts etching technics, realizes the graphical of Ni metal film, obtains patterned metal Ni mask;
7) by step 6) patterned metal Ni mask be attached on substrate, the required metal pattern of sputtering;
8) by step 7) in W metal mask take off, obtain the graphic structure of required metal.
Preferably, in the described step 3 of execution) time, adopt the method for magnetron sputtering to sputter one deck Cr/Cu Seed Layer.
Preferably, in the described step 3 of execution) time, Cr metal layer thickness 1 ~ 100nm, Cu metal layer thickness is 1 ~ 200nm.
Preferably, in the described step 4 of execution) time, adopt Kapton Tape or photoresist point glue in seed metal layer surface as release aperture.
Preferably, in the described step 5 of execution) time, Ni thickness of metal film is 1 ~ 60 μm.
Preferably, in the described step 6 of execution) time, join etching liquid in etching technics by H
2the H that the HCl solution that O, massfraction are 1 ~ 10% solution, massfraction are 1 ~ 50% solution
2o
2solution is formed, and three's mass ratio is 100:100:10.
Preferably, in the described step 8 of execution) time, W metal mask hydrogen peroxide and ammoniacal liquor mixed solution, remove the Cu of surface residual, remove Cr with the potassium ferricyanide and NaOH mixed solution, clean Ni film, reuses as the graphical shading type mask of next curved surface.
Compared with prior art, the invention has the beneficial effects as follows:
1, the graphical of complex devices can be realized on curved surface.The technique of common IC/MEMS device is carried out in the plane.The present invention is that the transfer realizing figure by flexible metal mask plate can repeat to print on curved surface.
2, use Ni metal film as flexible mask, metal film has certain own stress, and metal film, when not having external force to apply, can recover the shape consistent with original curved substrate curvature, then be covered on substrate, carries out sputtering directly graphical.The stress that flexible mask is had by oneself makes it recover the shape consistent with curved substrate curvature.Thus make this technique can make litho pattern high fidelity on curved surface, realize graphical transfer.
3, shading type mask can except mask plate preparation, and avoid using photoetching, on substrate, directly carry out sputtering graphical, the processing step avoiding exposure imaging technique to cause is loaded down with trivial details.
Accompanying drawing explanation
By reading the detailed description done non-limiting example with reference to the following drawings, other features, objects and advantages of the present invention will become more obvious:
Fig. 1 is the schematic flow sheet of an embodiment of preparation method of the present invention;
Fig. 2 is the structural representation departed from curved surface of the core process W metal film being applied to curved surface photoetching;
The technique diagrammatic cross-section of Fig. 3 to be nickel film of the present invention be graphical method for making of flexible mask curved surface shading type.
Embodiment
Below in conjunction with specific embodiment, the present invention is described in detail.Following examples will contribute to those skilled in the art and understand the present invention further, but not limit the present invention in any form.It should be pointed out that to those skilled in the art, without departing from the inventive concept of the premise, some distortion and improvement can also be made.These all belong to protection scope of the present invention.
Curved substrate in following examples, polishes whole in the front surface economy-combat of pad pasting, to surface of the work rough polishing process, removes surface and oil contaminant with acetone solvent, and with electrochemical degreasing, ultrasonic cleaning means make clean surface; Then use.
Embodiment 1:
Etching W metal film is used for being deposited on insulation curved surface last layer thermistor wire sensor construction.
The first step, carries out film coating process to curved surface convex-concave two sides.Ensure before pad pasting that leaf cleaning is clean, will note during pad pasting avoiding bubble to produce.Pad pasting is complete, puts into baking oven, carries out baking 30min with 90 DEG C.
Second step, fixes curved surface with Kapton Tape, places, and sputters, sputtering Cr/Cu Seed Layer.Cr metal layer thickness 1 ~ 100nm, Cu metal layer thickness is 1 ~ 200nm.
3rd step, electroplated Ni metal level in curved substrate Seed Layer.Curved surface is put photoresist be used for preparing release aperture.Plating need be carried out under water-bath 50 DEG C of environment, and workpiece connects negative pole, and Ni plate connects positive pole as sacrifice layer, respectively places one in the both sides of electroplating bath.Electroplating current parameter is fixed with plating area, and electroplating thickness increases in time.Electroplating current density is 10mA/cm
2.
4th step, soaks in 5%NaOH solution, cleans with the supersonic cleaning machine of 40KHz, release Ni metal level.Ni metal layer thickness is 1 ~ 60 μm.
5th step, attaches to glass wafer with Kapton Tape at Ni metal level edge, closely flattens, stick dry film, carry out exposure imaging under Ni metal level is not changed own stress situation.
6th step, etches Ni metal film, then the W metal mask etched is attached on curved substrate, and wherein joining etching liquid in chemical etching process is H
2o and massfraction are the HCl solution of 1 ~ 10% solution, and massfraction is the H of 1 ~ 50% solution
2o
2the ratio of solution is 100:100:10.
7th step, then by sputtering plating flow process, the metal pattern that will print is engraved on curved substrate.
8th step, the W metal mask on the curved substrate after sputtering is graphical takes off, and cleaning is placed.
This example utilizes flexible metal film to carry out curved surface deposition, and technological process need prepare W metal film as mask plate, and subsequent technique is simple, and reproducible, cost is lower.
Embodiment 2:
Laser cut metal Ni film pattern is used for shading type curved surface mask, is deposited on insulation curved surface last layer thermistor wire sensor construction.
The first step, carries out film coating process to curved surface convex-concave two sides.Ensure before pad pasting that leaf cleaning is clean, will note during pad pasting avoiding bubble to produce.Pad pasting is complete, puts into baking oven, carries out baking 30min with 90 DEG C.
Second step, fixes curved surface with Kapton Tape, places, and sputters.Sputtering Cr/Cu Seed Layer.Cr metal layer thickness 1 ~ 100nm, Cu metal layer thickness is 1 ~ 200nm.
3rd step, electroplated Ni metal level in curved substrate Seed Layer.Curved surface is put photoresist be used for preparing release aperture.Plating need be carried out under water-bath 50 DEG C of environment, and workpiece connects negative pole, and Ni plate connects positive pole as sacrifice layer, respectively places one in the both sides of electroplating bath.Electroplating current parameter is fixed with plating area, and electroplating thickness increases in time.Electroplating current density is 10mA/cm
2.
4th step, soaks in 5%NaOH solution, cleans with the supersonic cleaning machine of 40KHz, release Ni metal level.
5th step, after the film preparation of curved surface nickel is good, carries out the graphical of Laser Processing resistance wire to it.
6th step, is attached to Ni metal mask on curved surface, and to its sputtering, sputtering condition is Cr thickness 20nm, Cu thickness 200nm, after the polyimide adhesive plaster of protection blade and Ni template are removed, is formed in the resistance wire structure graph on curved surface.
7th step, the W metal mask on the curved substrate after sputtering is graphical takes off, and cleaning is placed.
This example utilizes flexible metal film to carry out curved surface deposition, and technological process need prepare W metal film as mask plate, and subsequent technique is simple, and reproducible, cost is lower.
By the specific descriptions of above embodiment, further illustrate object of the present invention, technical scheme and implementation result.It is to be appreciated that above-described embodiment is section Example of the present invention, the present invention can also have other embodiment, such as conversion process parameter and replace respective operations etc. by existing common technology means.Above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (6)
1. for a preparation method for the patterned flexible mask plate of curved surface, it is characterized in that, said method comprising the steps of:
1) by smooth for curved substrate surface finish, to surface of the work rough polishing process, remove surface and oil contaminant with acetone solvent, and with electrochemical degreasing, ultrasonic cleaning means make clean surface;
2) lamination is adopted to paste dry film technique through step 1) the curved substrate surface that processes carries out Double-face adhesive membrane process, and after pad pasting, carry out rear baking, obtain thin layer;
3) on thin layer, sputter one deck Cr/Cu Seed Layer, obtain the curved substrate containing Seed Layer;
4) electroplated Ni metal film in the Seed Layer of curved substrate, before electroplated Ni metal film, dispensing method adds release aperture;
5) by step 4) curved substrate that obtains is dipped in NaOH solution ultrasonic release Ni metal film, and Ni metal film is fixed on glass, and on Ni metal film, dry film is sticked in hot pressing;
6) to through step 5) dry film on curved substrate after process carries out exposure imaging technological process, and the figure after development adopts etching technics, realizes the graphical of Ni metal film, obtains patterned metal Ni mask;
7) by step 6) patterned metal Ni mask be attached on substrate, the required metal pattern of sputtering;
8) by step 7) in Ni metal mask take off, obtain the graphic structure of required metal.
2. method according to claim 1, is characterized in that, in the described step 3 of execution) time, adopt the method for magnetron sputtering to sputter one deck Cr/Cu Seed Layer.
3. method according to claim 2, is characterized in that, in the described step 3 of execution) time, Cr metal layer thickness 1 ~ 100nm, Cu metal layer thickness is 1 ~ 200nm.
4. method according to claim 1, is characterized in that, in the described step 5 of execution) time, the thickness of Ni metal film is 1 ~ 60 μm.
5. the method according to any one of claim 1-4, is characterized in that, in the described step 6 of execution) time, the etching liquid of joining in etching technics is by H
2the H that the HCl solution that O, massfraction are 1 ~ 10% solution, massfraction are 1 ~ 50% solution
2o
2solution is formed, and three's mass ratio is 100:100:10.
6. the method according to any one of claim 1-4, it is characterized in that, in the described step 8 of execution) time, W metal mask hydrogen peroxide and ammoniacal liquor mixed solution, remove the Cu of surface residual, remove Cr with the potassium ferricyanide and NaOH mixed solution, clean Ni film, reuses as the graphical shading type mask of next curved surface.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105858591A (en) * | 2016-03-29 | 2016-08-17 | 中国科学院高能物理研究所 | Metal micro-structure and manufacturing method thereof |
| CN106517084A (en) * | 2016-12-16 | 2017-03-22 | 合肥工业大学 | Preparation method for circular micro-coaxial metal structure with axial direction parallel to substrate |
| CN106773527A (en) * | 2016-12-28 | 2017-05-31 | 东旭科技集团有限公司 | The exposure method of mask plate, exposure machine and glass substrate |
| CN107352502A (en) * | 2017-08-10 | 2017-11-17 | 南京航空航天大学 | A kind of preparation method of the pure titanium surface microprotrusion array structure of bioconjugation |
| CN107572834A (en) * | 2016-07-04 | 2018-01-12 | 正达国际光电股份有限公司 | A kind of bend glass processing technology |
| CN107585736A (en) * | 2017-08-28 | 2018-01-16 | 宁夏软件工程院有限公司 | A kind of preparation method of the hydrophobic micro-structural of curved surface |
| CN108681207A (en) * | 2018-05-14 | 2018-10-19 | 华中科技大学 | A kind of curved surface photoetching process based on transparent flexible thin-film material |
| CN113161738A (en) * | 2021-05-25 | 2021-07-23 | 中国电子科技集团公司第二十九研究所 | Preparation method of low-frequency broadband curved surface circuit |
| CN115811878A (en) * | 2022-12-05 | 2023-03-17 | 有研新材料股份有限公司 | Method for manufacturing curved-surface random metal mesh grid |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105858591A (en) * | 2016-03-29 | 2016-08-17 | 中国科学院高能物理研究所 | Metal micro-structure and manufacturing method thereof |
| CN107572834A (en) * | 2016-07-04 | 2018-01-12 | 正达国际光电股份有限公司 | A kind of bend glass processing technology |
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| CN113161738A (en) * | 2021-05-25 | 2021-07-23 | 中国电子科技集团公司第二十九研究所 | Preparation method of low-frequency broadband curved surface circuit |
| CN113161738B (en) * | 2021-05-25 | 2021-08-31 | 中国电子科技集团公司第二十九研究所 | Preparation method of low-frequency broadband curved surface circuit |
| CN115811878A (en) * | 2022-12-05 | 2023-03-17 | 有研新材料股份有限公司 | Method for manufacturing curved-surface random metal mesh grid |
| CN115811878B (en) * | 2022-12-05 | 2023-06-02 | 有研新材料股份有限公司 | Method for manufacturing curved surface random metal grid |
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