CN106517084B - A kind of preparation method of the axial direction circular micro coaxle metal structure parallel with substrate - Google Patents
A kind of preparation method of the axial direction circular micro coaxle metal structure parallel with substrate Download PDFInfo
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- CN106517084B CN106517084B CN201611170575.3A CN201611170575A CN106517084B CN 106517084 B CN106517084 B CN 106517084B CN 201611170575 A CN201611170575 A CN 201611170575A CN 106517084 B CN106517084 B CN 106517084B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
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Abstract
The invention provides a kind of preparation method of axial direction circular micro coaxle metal structure parallel with substrate, releasing layer is coated in upper surface of substrate first, obtains being coated with the substrate of releasing layer；Longitudinally rounded micro coaxle metal structure is prepared in release layer surface, the axial direction circular micro coaxle metal structure vertical with substrate is obtained；Releasing layer is removed, circular micro coaxle metal structure is separated with substrate, circular micro coaxle metal structure is laterally bonded with substrate, the axial direction circular micro coaxle metal structure parallel with substrate is obtained.The preparation method that the present invention is provided solves the problem of horizontal cylindrical structure is difficult in prepared by existing micron order coaxial configuration, the problems such as avoiding the center alignment difficulties faced in current three-dimensional structure multilayer technology Continuous maching and big sidewall roughness, the axial direction that the prepares circular micro coaxle metal structure parallel with substrate is conducive to improving the integrated level of micro element as the interface unit of micro element.
Description
Technical field
The present invention relates to a kind of technical field of metal micro structure manufacture, more particularly to a kind of axial direction circle parallel with substrate
The preparation method of shape micro coaxle metal structure.
Background technology
In RF MEMS (radio-frequency micro electromechanical system), in order to meet function, assembling, it is integrated in terms of technical requirements,
Many components are required for the three-dimensional microstructures such as inclined-plane, free form surface, particularly micro coaxle structure, have been caused at present big
The concern of most researchers.
By a metallic inner conductor and it is enclosed in the transmission that empty tubular metallic outer conductor around it and coaxially therewith is constituted
Line is referred to as coaxial line.Current coaxial line is common signal transmssion line, and the copper core at center is used to transmit high level, and it is by insulation material
Material cladding；Insulating materials is PE (polyethylene) material, is mainly used in improving interference free performance, prevents the erosion of water, oxygen；Insulation material
Material outside is the cylindrical metallic thin layer coaxial with copper core, and it transmits low level, had again both as a wire in transmission loop
Shielding action, generally there is 3 kinds of structures --- tubular metal, aluminum plastic composite belt longitudinal bag overlap joint, mesh grid and aluminum plastic composite belt longitudinal
Package is closed, and the shielding properties of wherein tubular metal is best.
Micromachining technology mainly includes bulk silicon micromachining technology, surface micromachined technology, LIGA (i.e. light
The abbreviation at quarter, electroforming and injection) technology, LIGA-like technology, wafer bonding techniques and micromechanics package technique etc..Because side wall is steep
Directly, the big micro-structural of depth-to-width ratio can not only improve the performance of microdevice, moreover it is possible to increase the intensity of microdevice, prevent because of machine
The destruction that tool is failed or stress concentration is produced, therefore, the manufacturing technology of three-dimensional microstructures become MEMS (MEMS) and added
One of key technology of work.
The processing preparation technology of existing 3D- micro coaxles structure is mostly the square prepared using photoetching process multiple-layer stacked technology
Just as axle micro-structural, but the micro coaxle rustic degree of the method preparation is larger and verticality of side wall is poor, causes rectangle same
Axle micro-structural as micro element interface unit when, the integrated level of micro element is difficult to further raising, yet there are no in the prior art
The preparation method of the axial direction circular micro coaxle structure parallel with substrate.
The content of the invention
In view of this, the present invention proposes a kind of system of indirect preparation axial direction circular micro coaxle metal structure parallel with substrate
Preparation Method, the transverse uniaxial micro-structural of preparation is conducive to improving the integrated level of micro element as the interface unit of micro element.
In order to realize foregoing invention purpose, the present invention provides following technical scheme：
The invention provides a kind of preparation method of axial direction circular micro coaxle metal structure parallel with substrate, including it is following
Step：
Releasing layer is coated in upper surface of substrate；
Longitudinally rounded micro coaxle metal structure is prepared in the release layer surface, circular micro- vertical with substrate in axial direction is obtained
Coaxial metal structure；
The releasing layer in the circular micro coaxle metal structure vertical with substrate of the axial direction is removed, makes circular micro coaxle metal
Structure is separated with substrate, and circular micro coaxle metal structure is laterally bonded with substrate again, obtains circular micro- parallel with substrate in axial direction
Coaxial metal structure.
It is preferred that, the substrate is silicon base or metallic substrates.
It is preferred that, the material of the releasing layer is dimethyl silicone polymer, ethylene-vinyl acetate copolymer or EPDM
Rubber.
It is preferred that, the thickness of the releasing layer is 30~50nm.
It is preferred that, the longitudinally rounded micro coaxle metal structure include solid cylindrical inner wire, be set in it is described solid
Annulus cylindricality outer conductor outside cylindrical inner conductor and the supporter being arranged between internal and external conductor；The material of the supporter is poly-
Tetrafluoroethene；Have in the outer toroid of the annulus cylindricality outer conductor one along cylinder height direction square-section.
It is preferred that, a diameter of 40~80 μm of the solid cylindrical inner wire；The internal diameter of the annulus cylindricality outer conductor is
120~200 μm；The thickness of the annulus cylindricality outer conductor is 8~12 μm；The thickness of the supporter is 20~60 μm；It is described
The width of square-section is more than solid cylindrical inner wire diameter and less than the inner circle ring diameter of annulus cylindricality outer conductor.
It is preferred that, the removal of the releasing layer includes：By the axial direction circular micro coaxle metal structure vertical with substrate
It is soaked in volatile solvent, dissolves releasing layer.
It is preferred that, the volatile solvent is one or more of mixtures in chloroform, dichloromethane and toluene.
It is preferred that, the preparation method of the longitudinally rounded micro coaxle metal structure comprises the following steps：
The film structure of circular micro coaxle metal structure is prepared on releasing layer using Ultraviolet lithography；
Micro- electroforming metal cast layer in the film structure, then film structure is removed, obtain inside and outside metallic conductor structure；
Supporter is molded in the inside and outside metallic conductor structure, longitudinally rounded micro coaxle metal structure is obtained.
The invention provides a kind of axial direction of preparation method preparation described in such scheme circular micro coaxle parallel with substrate
Metal structure, including substrate and the circular micro coaxle metal structure being horizontally integrated in substrate.
The invention provides a kind of preparation method of axial direction circular micro coaxle metal structure parallel with substrate, including it is following
Step：Releasing layer is coated in upper surface of substrate；Longitudinally rounded micro coaxle metal structure is prepared in the release layer surface, axle is obtained
To the circular micro coaxle metal structure vertical with substrate；Remove in the circular micro coaxle metal structure vertical with substrate of the axial direction
Releasing layer, circular micro coaxle metal structure is separated with substrate, circular micro coaxle metal structure again laterally is bonded with substrate, obtain
To the axial direction circular micro coaxle metal structure parallel with substrate.It is coaxial that the preparation method that the present invention is provided solves existing micron order
Structure is the problem of horizontal cylindrical structure is difficult in preparing, it is to avoid faced in current three-dimensional structure multilayer technology Continuous maching
Center alignment difficulties and the problems such as big sidewall roughness, the axial direction that the prepares circular micro coaxle metal knot parallel with substrate
Structure is conducive to improving the integrated level of micro element as the interface unit of micro element.Test result indicates that, the preparation that the present invention is provided
The sidewall roughness of the axial direction circular micro coaxle metal structure parallel with substrate prepared by method is only 30~50nm.
Brief description of the drawings
Fig. 1 a are the flow chart that the embodiment of the present invention prepares metal seed layer；
Fig. 1 b are the cross-sectional view that the embodiment of the present invention prepares metal seed layer；
Fig. 2 a are the flow chart that the embodiment of the present invention prepares micro coaxle internal and external conductor film structure；
Fig. 2 b are the cross-sectional view of micro coaxle internal and external conductor film structure prepared by the embodiment of the present invention；
Fig. 3 a are the flow chart that the embodiment of the present invention prepares inside and outside metallic conductor structure；
Fig. 3 b are the cross-sectional view of inside and outside metallic conductor structure prepared by the embodiment of the present invention；
Fig. 4 a are the longitudinal section that the embodiment of the present invention is molded after supporter；
Fig. 4 b are the cross-sectional view that the embodiment of the present invention is molded after supporter；
Fig. 5 is that longitudinally rounded micro coaxle structure is separated and is laterally bonded to the stream in substrate by the embodiment of the present invention with substrate
Journey schematic diagram；
Fig. 6 a are the structural representation of the first mask plate；
Fig. 6 b are the structural representation of the second mask plate；
In Fig. 1~6：1- silicon bases, 2- releasing layers, 3- metal levels, 4- positive photoetching rubbers, the positive photoetching rubber glued membrane knot of 5- shadings
Metal inside and outside structure, 6- metal seed layers, 7- negative photoresists, 8- micro coaxle internal and external conductor film structures, 9- metal cast layers, 10-
Conductor structure, 11- supporters, 12- circle micro coaxle metal structures.
Embodiment
The invention provides a kind of preparation method of axial direction circular micro coaxle metal structure parallel with substrate, including it is following
Step：
Releasing layer is coated in upper surface of substrate；
Longitudinally rounded micro coaxle metal structure is prepared in the release layer surface, circular micro- vertical with substrate in axial direction is obtained
Coaxial metal structure；
The releasing layer in the circular micro coaxle metal structure vertical with substrate of the axial direction is removed, makes circular micro coaxle metal
Structure is separated with substrate, and circular micro coaxle metal structure is laterally bonded with substrate again, obtains circular micro- parallel with substrate in axial direction
Coaxial metal structure.
The present invention coats releasing layer in upper surface of substrate.In the present invention, the substrate is preferably silicon base or Metal Substrate
Bottom；The metallic substrates are preferably copper-based bottom；The material of the releasing layer is preferably dimethyl silicone polymer, ethyl vinyl acetate second
Alkene copolymer or ethylene propylene diene rubber；The thickness of the releasing layer is preferably 30~50nm, more preferably 35~45nm.
In the present invention, the dimethyl silicone polymer is the fluid of water white transparency at normal temperatures, preferably mixed with curing agent
It is coated after conjunction；The curing agent is preferably sodium benzoate and/or methyl tetrahydro phthalic anhydride；The dimethyl silicone polymer is with consolidating
The mass ratio of agent is preferably 4~8:1, more preferably 5~6:1.
In the present invention, the ethylene-vinyl acetate copolymer is preferably ethylene-vinyl acetate copolymer emulsion, described
The solid content of ethylene-vinyl acetate copolymer emulsion is preferably 50~70%, and more preferably 55~65%；In the present invention, second
Alkene-acetate ethylene copolymer emulsion can be directly used for coating, after coating with the volatilization of solvent film-forming.
In the present invention, ethylene propylene diene rubber is preferably ethylene-propylene-diene monomer latex solution, the ethylene-propylene-diene monomer latex solution
Solid content is preferably 50~70%, and more preferably 55~65%；Ethylene-propylene-diene monomer latex solution can be directly used for coating, after coating with
Solvent volatilization and film-forming.
The present invention does not have particular/special requirement to the specific method of coating, using the conventional application method of this area, preferably
It is coated using coating machine.
After upper surface of substrate coating releasing layer, the present invention prepares longitudinally rounded micro coaxle metal in the release layer surface
Structure, obtains the axial direction circular micro coaxle metal structure vertical with substrate.In the present invention, the longitudinally rounded micro coaxle metal
Structure preferably includes solid cylindrical inner wire, the annulus cylindricality outer conductor being set in outside the solid cylindrical inner wire and set
Put the supporter between internal and external conductor；In the outer toroid of the annulus cylindricality outer conductor preferably have one along cylinder height direction square
Tee section.In the present invention, the supporter is preferably polytetrafluoroethylene (PTFE)；The thickness of the supporter is preferably 20~60 μm,
More preferably 25~40 μm.In the present invention, the solid cylindrical inner wire is arranged at intervals with the annulus cylindricality outer conductor；
The solid cylindrical inner wire diameter is preferably 40~80 μm, more preferably 50~70 μm；The annulus cylindricality outer conductor
Internal diameter is preferably 120~200 μm, more preferably 150~180 μm；The thickness of the annulus cylindricality outer conductor is preferably 8~12 μ
M, more preferably 10 μm；The width of the square-section is preferably greater than solid cylindrical inner wire diameter and less than outside annulus cylindricality
The inner circle ring diameter of conductor.
In the present invention, the preparation method of the longitudinally rounded micro coaxle metal structure preferably includes following steps：
The film structure of circular micro coaxle metal structure is prepared on releasing layer using Ultraviolet lithography；
Micro- electroforming metal cast layer in the film structure of the circular micro coaxle metal structure, then film structure is removed, obtain
To inside and outside metallic conductor structure；
Supporter is molded in the inside and outside metallic conductor structure, longitudinally rounded micro coaxle metal structure is obtained.
The present invention prepares the film structure of circular micro coaxle metal structure using Ultraviolet lithography on releasing layer, preferably wraps
Include following steps：
On releasing layer successively vacuum sputtering of metal layer, coating positive photoresist, obtain the second substrate；
Second substrate is placed under the first mask plate and carries out the first uv-exposure, the positive photoetching rubber glued membrane of shading is obtained
First is carried out after structure, the first uv-exposure to develop, and the positive photoetching rubber film structure of shading is removed after the first development, metal is obtained
Seed Layer；
Negative photoresist is coated on the metal seed layer, the 3rd substrate is obtained；
3rd substrate is placed under the second mask plate and carries out the second uv-exposure, second is carried out after the second uv-exposure
Development, obtains the film structure of micro coaxle internal and external conductor.
The present invention on releasing layer successively vacuum sputtering of metal layer, coating positive photoresist, obtain the second substrate.In this hair
It is convenient for statement in bright, the substrate comprising releasing layer, metal level and positive photoresist is referred to as the second substrate.
In the present invention, the material of the metal level is preferably copper, nickel or gold；The thickness of the metal level is preferably 30~
50nm, more preferably 35~45nm.The present invention does not have particular/special requirement to the specific method of vacuum sputtering, conventional using this area
Vacuum sputtering methods；
In the present invention, the thickness of dry film of the positive photoresist is preferably 50~80nm, more preferably 60~70nm；This
Invention does not have particular/special requirement to the species of positive photoresist, uses the conventional positive photoresist in this area, preferably RZJ-
304 positive photoresists.
Obtain after the second substrate, the second substrate is placed under the first mask plate by the present invention carries out the first uv-exposure.At this
In invention, first mask plate is preferably glass material；The thickness of first mask plate is preferably 2mm~4mm, more preferably
For 3mm；First mask plate include shading light part and and the light transmission part complementary with the shading light part, the light transmission part
There is a straight line along the circumferential direction on circle including center and the annulus with the circular shape concentric, the excircle of the annulus
Section；The size of the light transmission part is consistent with the size of above-mentioned longitudinally rounded micro coaxle metal structure, will not be repeated here；It is described
Shading light part chrome-faced；The ultraviolet wavelength of the uv-exposure is preferably 365~400nm, more preferably 370~390nm.
After first uv-exposure, obtained product is carried out first and developed by the present invention.In the present invention, described first
Development is preferably TMAH developer solution with developer solution；First development is preferably static immersion development；It is described aobvious
The time of shadow is preferably 10~60s, more preferably 30~40s；The temperature of the development is preferably 18~40 DEG C, more preferably 20
~25 DEG C.
After first development, the present invention removes the positive photoetching rubber film structure of shading in products obtained therefrom, obtains metal kind
Sublayer.Positive photoetching rubber is removed present invention preferably uses glue-dispenser；The present invention does not have particular/special requirement to the specific species of glue-dispenser, makes
With the PG glue-dispensers of this area conventional glue-dispenser, preferably U.S. MicroChem companies.
Obtain after metal seed layer, the present invention coats negative photoresist on the metal seed layer, obtains the 3rd substrate.
In the present invention, convenient for statement, the substrate for being coated with negative photoresist is referred to as the 3rd substrate.The present invention is to negative photoresist
Species there is no particular/special requirement, preferably SU-8 negative photoresists；The thickness of dry film of the negative photoresist is preferably 300~
500 μm, more preferably 350~450 μm.
Obtain after the 3rd substrate, the 3rd substrate is placed under the second mask plate by the present invention carries out the second uv-exposure.At this
In invention, the material and thickness of second mask plate are identical with the first mask plate, will not be repeated here；Second mask plate
The complementary light transmission part including shading light part and with the shading light part；The shape and size of the shading light part and the first mask
The light transmission part of version is identical, will not be repeated here；The shading light part chromium plating；
The present invention does not have particular/special requirement to the concrete operation method of the first uv-exposure and the second uv-exposure, uses ability
The conventional ultraviolet exposure method in domain.
After second uv-exposure, obtained product is carried out second and developed by the present invention, obtains micro coaxle internal and external conductor
Film structure.In the present invention, the developer solution and development operation of second development and the technical scheme of the first development
It is identical, it will not be repeated here.
After the film structure for obtaining circular micro coaxle metal structure, glued membrane knot of the present invention in circular micro coaxle metal structure
Micro- electroforming metal cast layer in structure, then the film structure of circular micro coaxle metal structure is removed, obtain inside and outside metallic conductor structure.
In the present invention, the material of the metal cast layer is consistent with metal seed layer, will not be repeated here；The thickness of the metal cast layer is excellent
Elect 300~500 μm, more preferably 350~450 μm as；The temperature of micro- electroforming is preferably 30~60 DEG C, more preferably 40~
50℃。
Present invention preferably uses the film structure that glue-dispenser removes circular micro coaxle metal structure；The present invention is to glue-dispenser
Specific species does not have particular/special requirement, uses the conventional glue-dispenser in this area, preferably PG glue-dispensers.
Obtain after inside and outside metallic conductor structure, the present invention in the inside and outside metallic conductor structure inner wire and outer conductor it
Between be molded supporter, obtain longitudinally rounded micro coaxle metal structure.In the present invention, the species of the supporter and above-mentioned technology
Material described in scheme is consistent, will not be repeated here；The present invention does not have particular/special requirement to the concrete operation method of injection, uses ability
The conventional injection moulding process in domain.
Obtain after the circular micro coaxle metal structure vertical with substrate of axial direction, it is vertical with substrate that the present invention removes the axial direction
Circular micro coaxle metal structure in releasing layer, circular micro coaxle metal structure is separated with substrate.In the present invention, it is described
The removal of releasing layer preferably includes following steps：The axial direction circular micro coaxle metal structure vertical with substrate is soaked in and waved
In hair property solvent, releasing layer is dissolved.In the present invention, during the volatile solvent is preferably chloroform, dichloromethane and toluene
One or more of mixtures；The time of the immersion is preferably 5~10min, more preferably 6~8min；The temperature of the immersion
Degree is preferably room temperature, without being heated and being cooled.
It is of the invention by circular micro coaxle metal structure and substrate cross key after circular micro coaxle metal structure is separated with substrate
Close, obtain the axial direction circular micro coaxle metal structure parallel with substrate.In the present invention, the bonding is preferably metal bonding,
The present invention does not have particular/special requirement to the concrete operation method of metal bonding, using the conventional metal bonding methods in this area,
Preferably include following steps：
The square-section of substrate and circular micro coaxle metal structure is entered using ion beam bombardment or plasma resonance method
Row activation；
By the square-section of circular micro coaxle metal structure and substrate transverse fit.
In the present invention, the time of the activation is preferably 30~60s, more preferably 40~50s；The substrate is silicon substrate
During bottom, present invention additionally comprises before activation the step of silicon substrate surface splash-proofing sputtering metal layer；The thickness of the metal level is preferred
For 30~50nm, more preferably 35~45nm；The material of the metal level is preferably copper, nickel or gold.The present invention utilizes ion beam
Bombardment or plasma resonance are removed the oxide and spot on to be bonded surface, obtain fresh clean surface, together
When cause bonding surface to generate active, incomplete chemical bond, after bonded interface contact, extremely unstable chemical bond starts
Spontaneous reaction forms firm chemical bond.
The present invention prepares longitudinal circular micro coaxle metal structure first using the rippability of releasing layer, then by circle
Laterally it is bonded to after the separation of micro coaxle metal structure in substrate, it is using the mode of metal bonding that circular micro coaxle metal structure is horizontal
Firmly combined to substrate, obtain a kind of axial direction circular micro coaxle metal structure parallel with substrate, solve existing micron
The level coaxial configuration problem that horizontal cylindrical structure is difficult in preparing.
With reference to the preparation of the embodiment circular micro coaxle metal structure parallel with substrate to the axial direction of the invention provided
Method is described in detail, but they can not be interpreted as limiting the scope of the present invention.
Embodiment 1
A) metal seed layer is prepared：As shown in Fig. 1 a~1b, coating thickness 50nm polydimethylsiloxanes on a silicon substrate
Alkane (PDMS) film is as releasing layer, the vacuum sputtering thickness 50nm copper metal layer on releasing layer, is coated on copper metal layer
Thickness 50nm positive photoresist；It is 365nm's that the silicon chip for coating positive photoresist, which is placed under the first mask plate with wavelength,
Ultraviolet photoetching, first mask plate is to be carved with the chromium plating mask plate that glass material, thickness are 3mm, the first mask plate
(light transmission part includes the circle and the annulus with the circular shape concentric at center, and remainder is circle described in shading light part for light part
There is one section of straightway, wherein interior solid diameter of a circle is 40 μm, the inner circle a diameter of 120 of outside annulus on the excircle of ring
μm, annulus thickness is 20 μm, and length of straigh line is 50 μm)；Silicon chip after exposure is immersed in TMAH development
Develop in liquid, then remove positive photoetching rubber with PG glue-dispensers, that is, metal seed layer needed for obtaining；
B) micro coaxle internal and external conductor film structure is prepared：As shown in Fig. 2 a~2b, a thickness is coated on metal seed layer 6
The SU-8 negative photoresists for 400um are spent,；The silicon base for coating negative photoresist is subjected to ultraviolet light exposure under the second mask plate
Light, the second mask plate is that glass material, thickness are 3mm, includes the shape and size of shading light part and light transmission part shading light part
It is identical with the first mask plate light transmission part；Silicon base after exposure is developed in TMAH developer solution, obtained micro-
Coaxial internal and external conductor film structure；
C) inside and outside metallic conductor structure is prepared：As shown in Fig. 3 a~3b, micro coaxle internal and external conductor film structure is placed in electricity
Micro- copper electroforming is carried out at a temperature of 32.2 DEG C of electroforming in casting liquid, copper electroforming is obtained；Film structure is removed with PG glue-dispensers, is obtained
Inside and outside metallic conductor structure, control electroforming copper thickness be 400um, wherein the component of electroforming solution include 9080g anhydrous cupric sulfates,
1283ml sulfuric acid, 4ml hydrochloric acid and 76g Potassium aluminum sulfate dodecahydrates；
D) longitudinally rounded micro coaxle metal structure is prepared：As shown in Fig. 4 a~4b, it is molded in inside and outside metallic conductor structure
Supporter, the supporter is polytetrafluoroethylene (PTFE), obtains longitudinally rounded micro coaxle metal structure；
E) the axial direction circular micro coaxle metal structure vertical with substrate is soaked in chloroform, dissolves releasing layer, by circle
Shape metal micro coaxle structure is taken off and is laterally bonded on new silicon chip from silicon chip in dustless glove box, that is, obtains axle
To the circular micro coaxle metal structure parallel with substrate.
According to GB/T 1031-2009《Surface configuration method surface roughness parameter and its numerical value》In method to institute
The sidewall roughness for obtaining circular micro coaxle metal structure axially parallel with substrate is detected that can obtain its sidewall roughness is
30.5nm。
Embodiment 2
A) metal seed layer is prepared：As shown in Fig. 1 a~1b, coating thickness 30nm polydimethylsiloxanes on a silicon substrate
Alkane film is as releasing layer, vacuum sputtering thickness 30nm copper metal layer, the coating thickness on copper metal layer on releasing layer
30nm positive photoresist；It is the ultraviolet of 365nm that the silicon chip for coating positive photoresist, which is placed under the first mask plate with wavelength,
Light exposes, and first mask plate is to be carved with transmittance section on the chromium plating mask plate that glass material, thickness are 3mm, the first mask plate
Point (light transmission part include center circle and the annulus with the circular shape concentric, remainder be annulus described in shading light part
There is one section of straightway, wherein interior solid diameter of a circle is 80 μm, a diameter of 120 μm of the inner circle of outside annulus on excircle,
Annulus thickness is 20 μm, and length of straigh line is 100 μm)；Silicon chip after exposure is immersed in TMAH developer solution
Middle development, then removes positive photoetching rubber with PG glue-dispensers, that is, metal seed layer needed for obtaining；
B) micro coaxle internal and external conductor film structure is prepared：As shown in Fig. 2 a~2b, a thickness is coated on metal seed layer
Spend the SU-8 negative photoresists for 500um；The silicon base for coating negative photoresist is subjected to ultraviolet light exposure under the second mask plate
Light, the second mask plate is that glass material, thickness are 3mm, includes the shape and size of shading light part and light transmission part shading light part
It is identical with the first mask plate light transmission part；Silicon base after exposure is developed in TMAH developer solution, obtained micro-
Coaxial internal and external conductor film structure；
C) inside and outside metallic conductor structure is prepared：As shown in Fig. 3 a~3b, micro coaxle internal and external conductor film structure is placed in electricity
Micro- copper electroforming is carried out at a temperature of 45 DEG C of electroforming in casting liquid, copper electroforming is obtained；Film structure is removed with PG glue-dispensers, obtains interior
Outer metallic conductor structure, control electroforming copper thickness be 500um, wherein the component of electroforming solution include 9080g anhydrous cupric sulfates,
1283ml sulfuric acid, 4ml hydrochloric acid and 76g Potassium aluminum sulfate dodecahydrates；
D) longitudinally rounded micro coaxle metal structure is prepared：As shown in Fig. 4 a~4b, it is molded in inside and outside metallic conductor structure
Polytetrafluoroethylene (PTFE), obtains longitudinally rounded micro coaxle metal structure；
E) the axial direction circular micro coaxle metal structure vertical with substrate is soaked in dichloromethane, dissolves releasing layer,
Circular metal micro coaxle structure from silicon chip is taken off and is laterally bonded on new silicon chip in dustless glove box, that is, is obtained
Obtain circular micro coaxle metal structure axially parallel with substrate.
According to GB/T 1031-2009《Surface configuration method surface roughness parameter and its numerical value》In method to institute
The sidewall roughness for obtaining circular micro coaxle metal structure axially parallel with substrate is detected that can obtain its sidewall roughness is
32.1nm。
Embodiment 3
A) metal seed layer is prepared：As shown in Fig. 1 a~1b, the coating thickness 40nm polydimethylsiloxanes on copper-based bottom
Alkane film is as releasing layer, vacuum sputtering thickness 40nm nickel metal layer, the coating thickness on nickel metal layer on releasing layer
30nm positive photoresist；It is the ultraviolet of 365nm that the silicon chip for coating positive photoresist, which is placed under the first mask plate with wavelength,
Light exposes, and first mask plate is to be carved with transmittance section on the chromium plating mask plate that glass material, thickness are 3mm, the first mask plate
Point (light transmission part include center circle and the annulus with the circular shape concentric, remainder be annulus described in shading light part
There is one section of straightway, wherein interior solid diameter of a circle is 60 μm, a diameter of 140 μm of the inner circle of outside annulus on excircle,
Annulus thickness is 20 μm, and length of straigh line is 80 μm)；Silicon chip after exposure is immersed in TMAH developer solution
Development, then removes positive photoetching rubber with PG glue-dispensers, that is, metal seed layer needed for obtaining；
B) micro coaxle internal and external conductor film structure is prepared：As shown in Fig. 2 a~2b, a thickness is coated on metal seed layer
The SU-8 negative photoresists for 400um are spent,；The silicon base for coating negative photoresist is subjected to ultraviolet light exposure under the second mask plate
Light, the second mask plate is that glass material, thickness are 3mm, includes the shape and size of shading light part and light transmission part shading light part
It is identical with the first mask plate light transmission part；Silicon base after exposure is developed in TMAH developer solution, obtained micro-
Coaxial internal and external conductor film structure；
C) inside and outside metallic conductor structure is prepared：As shown in Fig. 3 a~3b, micro coaxle internal and external conductor film structure is placed in electricity
Micro- electroformed nickel is carried out at a temperature of 45 DEG C of electroforming in casting liquid, electroformed nickel is obtained；Film structure is removed with PG glue-dispensers, obtains interior
Outer metallic conductor structure, it is 400um to control electroformed nickel thickness, and the wherein component of electroforming solution includes 120~160g/ of nickel sulfamic acid
L, 3~5g/L of nickel chloride, 30~35g/L of boric acid.
D) longitudinally rounded micro coaxle metal structure is prepared：As shown in Fig. 4 a~4b, it is molded in inside and outside metallic conductor structure
Polytetrafluoroethylene (PTFE), obtains longitudinally rounded micro coaxle metal structure；
E) the axial direction circular micro coaxle metal structure vertical with substrate is soaked in toluene, dissolves releasing layer, by circle
Shape metal micro coaxle structure is taken off and is laterally bonded on new silicon chip from silicon chip in dustless glove box, that is, obtains axle
To the circular micro coaxle metal structure parallel with substrate.
According to GB/T 1031-2009《Surface configuration method surface roughness parameter and its numerical value》In method to institute
The sidewall roughness for obtaining circular micro coaxle metal structure axially parallel with substrate is detected that can obtain its sidewall roughness is
48.5nm。
It can be seen from above example, the preparation method that the present invention is provided is solved in existing micron order coaxial configuration preparation
The problem of horizontal cylindrical structure is difficult to, the axial direction that the prepares circular micro coaxle metal structure side wall parallel with substrate is thick
Rugosity is small, and due to being transverse uniaxial structure, the problem of without considering verticality of side wall, axial direction prepared by the present invention and substrate
Parallel circular micro coaxle metal structure is applied to the connection of micro element, is conducive to improving the integrated level of micro element.
Described above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (7)
1. a kind of preparation method of axial direction circular micro coaxle metal structure parallel with substrate, comprises the following steps：
Releasing layer is coated in upper surface of substrate；
Longitudinally rounded micro coaxle metal structure is prepared in the release layer surface, the axial direction circular micro coaxle vertical with substrate is obtained
Metal structure；
The releasing layer in the circular micro coaxle metal structure vertical with substrate of the axial direction is removed, makes circular micro coaxle metal structure
Separated with substrate, circular micro coaxle metal structure is laterally bonded with substrate again, obtains the axial direction circular micro coaxle parallel with substrate
Metal structure；
The longitudinally rounded micro coaxle metal structure includes solid cylindrical inner wire, is set in the solid cylindrical inner wire
Outer annulus cylindricality outer conductor and the supporter being arranged between internal and external conductor；The material of the supporter is polytetrafluoroethylene (PTFE)；Institute
There is the square-section along cylinder height direction in the outer toroid for stating annulus cylindricality outer conductor；
A diameter of 40~80 μm of the solid cylindrical inner wire；The internal diameter of the annulus cylindricality outer conductor is 120~200 μm；
The thickness of the annulus cylindricality outer conductor is 8~12 μm；The thickness of the supporter is 20~60 μm；The width of the square-section
Degree is more than solid cylindrical inner wire diameter and less than the inner circle ring diameter of annulus cylindricality outer conductor.
2. preparation method according to claim 1, it is characterised in that the substrate is silicon base or metallic substrates.
3. preparation method according to claim 1, it is characterised in that the material of the releasing layer is polydimethylsiloxanes
Alkane, ethylene-vinyl acetate copolymer or ethylene propylene diene rubber.
4. the preparation method according to claim 1 or 3, it is characterised in that the thickness of the releasing layer is 30~50nm.
5. preparation method according to claim 1, it is characterised in that the removal of the releasing layer includes：By the axial direction
The circular micro coaxle metal structure vertical with substrate is soaked in volatile solvent, dissolves releasing layer.
6. preparation method according to claim 5, it is characterised in that the volatile solvent be chloroform, dichloromethane and
One or more of mixtures in toluene.
7. preparation method according to claim 1, it is characterised in that the preparation of the longitudinally rounded micro coaxle metal structure
Method comprises the following steps：
The film structure of circular micro coaxle metal structure is prepared on releasing layer using Ultraviolet lithography；
Micro- electroforming metal cast layer in the film structure, then film structure is removed, obtain inside and outside metallic conductor structure；
Supporter is molded in the inside and outside metallic conductor structure, longitudinally rounded micro coaxle metal structure is obtained.
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